Detector

Abstract

The detector comprises a light response memristor structure, a switch and a photosensitive unit, the first end of the light response memristor structure is electrically connected with the P end of the photosensitive unit through the switch, and the second end of the light response memristor structure is electrically connected with the N end of the photosensitive unit. And when the response current generated by the photosensitive unit under the illumination condition is unchanged or does not generate the response current, the switch is in a closed state, and the light response memristor structure, the switch and the photosensitive unit form a parallel loop. When the photosensitive unit generates changing response current under the illumination condition, the switch is in an off state. In the scheme, under the condition of weak illumination, unobvious light intensity change or strong illumination, the response current generated by the photosensitive unit does not change or does not generate the response current, the light response memristor structure and the photosensitive unit are connected in parallel through the connecting switch, the exposure time under the condition of weak illumination, unobvious light intensity change or strong illumination is prolonged, and the light response effect is improved. Therefore, the photoresponse memristive structure generates response current, and the identification precision of the detector is improved.

Description

Technical Field

[0001] This application relates to the fields of conductor device technology and integrated circuit technology, and in particular to a detector. Background Technology

[0002] PIN-based detectors are widely used. When the light intensity changes, the concentration of photogenerated carriers changes, resulting in a photoresponse current. The intensity of the light is detected by the strength of the current.

[0003] However, in high-precision fields, when the change in light intensity is not significant, traditional PIN structure detectors cannot effectively detect subtle changes. Utility Model Content

[0004] This application provides a detector that can increase the response current and thus increase recognition accuracy by extending the exposure time under weak light, light intensity variation insignificant, or strong light conditions.

[0005] The detector provided in this application includes a photoresponse memristor structure, a switch, and a photosensitive unit. The photosensitive unit includes a P-terminal and an N-terminal. The first terminal of the photoresponse memristor structure is electrically connected to the P-terminal through the switch, and the second terminal of the photoresponse memristor structure is electrically connected to the N-terminal.

[0006] When the response current generated by the photosensitive unit does not change or does not generate a response current under illumination, the switch is in the closed state. The photoresponse memristor structure, the switch, and the photosensitive unit form a parallel circuit. The photoresponse memristor structure is used to generate a response current under illumination.

[0007] In one feasible implementation, the photoresponse memristor structure includes a first indium tin oxide electrode, a molybdenum oxide thin film layer, and a palladium electrode; the first indium tin oxide electrode is electrically connected to the P-terminal, and the palladium electrode is electrically connected to the N-terminal.

[0008] In one feasible implementation, the switch is in the off state when the photosensitive unit generates a changing response current under illumination.

[0009] In one feasible implementation, the switch includes a positive terminal and a negative terminal. The positive terminal is electrically connected to the P terminal via a first wire, and the negative terminal is electrically connected to the indium tin oxide electrode via a second wire. The palladium electrode is electrically connected to the N terminal via a third wire.

[0010] In one feasible implementation, the detector further includes an input wire and an output wire, with the input wire electrically connected to the P terminal and the output wire electrically connected to the palladium electrode or the N terminal.

[0011] In one feasible implementation, the detector further includes a substrate and a first metal layer stacked together, a photoresponse memristor structure and a photosensitive unit spaced apart, and both the photoresponse memristor structure and the photosensitive unit are located on the side of the first metal layer facing away from the substrate; the first metal layer connects the P-terminal and the palladium electrode.

[0012] In one feasible implementation, the detector further includes a first protective layer and a second protective layer; the first protective layer is disposed between the substrate and the first metal layer, and the second protective layer covers the photosensitive unit, the first metal layer and the photoresponse memristor structure.

[0013] In one feasible implementation, a palladium electrode is disposed on the side of the first metal layer facing away from the substrate, a molybdenum oxide thin film layer is disposed on the side of the palladium electrode facing away from the first metal layer, and a first indium tin oxide electrode is disposed on the side of the molybdenum oxide thin film layer facing away from the palladium electrode.

[0014] In one feasible implementation, the detector further includes a second metal layer, a third metal layer, and a second indium tin oxide electrode; the second indium tin oxide electrode is disposed between the N-terminus and the second protective layer; the second protective layer is provided with a first through-hole and a second through-hole, the second metal layer passes through the first through-hole and is connected to the second indium tin oxide electrode; the third metal layer passes through the second through-hole and is connected to the first indium tin oxide electrode.

[0015] In one feasible implementation, the detector further includes a third protective layer covering the side of the second metal layer facing away from the second indium tin oxide electrode, the side of the third metal layer facing away from the first indium tin oxide electrode, and the side of the second protective layer facing away from the first indium tin oxide electrode.

[0016] In this scheme, a photoresponse memristor structure is incorporated into the photosensitive unit-based detector. Under weak light, insignificant light intensity changes, or strong light conditions, the response current generated by the photosensitive unit remains unchanged or does not generate any response current. By connecting the photoresponse memristor structure and the photosensitive unit in parallel through a switch, the photoresponse memristor structure generates a response current, facilitating the photodetector structure within the detector to identify the light intensity under these conditions, thus improving the detector's recognition accuracy. After detection, a reverse voltage is applied to the indium tin oxide electrode to change the photoresponse memristor structure from a low-resistance state to a high-resistance state, re-initializing the structure and enabling reuse, thereby reducing production costs. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0018] Figure 1 This is a schematic diagram of the detector circuit provided in this application;

[0019] Figure 2 This is a schematic diagram of the detector structure provided in this application;

[0020] Figure 3 The detection method provided in this application.

[0021] Explanation of reference numerals in the attached figures:

[0022] 1-First indium tin oxide electrode, 2-Molybdenum oxide thin film layer, 3-Palladium electrode, 4-Switch, 5-Input wire, 6-First wire, 7-Second wire, 8-Third wire, 9-Output wire, 10-Photoresponse memristor structure, 11-Photosensitive unit, 12-Insulating layer, 13-Second metal layer, 14-First metal layer, 15-First protective layer, 16-Second protective layer, 17-Third protective layer, 18-Substrate, 19-Second indium tin oxide electrode, 20-Third metal layer. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this application clearer, the application will now be described in further detail with reference to the accompanying drawings.

[0024] Photodetectors based on photosensitive units are widely used. Although photosensitive units are sensitive to light and can generate a response current when the light intensity changes, they do not generate a response current or the change in response current is very small under weak light, light intensity variation is not obvious, or strong light conditions, resulting in insignificant light intensity changes and thus recognition errors. Therefore, this application provides a detector that adds a photoresponse memristor structure to the photosensitive unit. By extending the exposure time under weak light, light intensity variation is not obvious, or strong light conditions, the response current is increased, and the recognition accuracy is improved. The detector of this application can be applied to image capture fields such as X-ray imaging and digital cameras.

[0025] Please see Figure 1 , Figure 1 The detector provided in this application includes a photoresponse memristor structure 10, a switch 4, and a photosensitive unit 11. In terms of circuit connection, the first terminal of the photoresponse memristor structure 10 is electrically connected to the P terminal of the photosensitive unit 11 via the switch 4, and the second terminal of the photoresponse memristor structure 10 is electrically connected to the N terminal of the photosensitive unit 11. The photoresponse memristor structure 10 is used when the photosensitive unit 11 does not generate a response current or the change in the generated response current is very small; it is connected in parallel with the photosensitive unit 11 to increase the response current. The conductivity of the photoresponse memristor structure 10 changes with the illumination time; increasing the exposure time can increase the change in photoresponse current under conditions of weak light intensity or high light intensity. The detector also includes a photodetector structure, which can identify the light intensity by monitoring the response current generated by the photosensitive unit 11 and the photoresponse memristor structure 10. Under weak light conditions and conditions where the light intensity and change are not significant, such as when the light intensity and change are less than 1 nanowatt per square centimeter (nW / cm²), the photodetector structure can detect the light intensity.2 When the value is less than or equal to a smaller value, the photosensitive unit 11 does not generate a response current; or under strong light conditions, such as light intensity greater than 10 milliwatts per square centimeter (mW / cm²). 2 When the response current generated by the photosensitive unit 11 changes very little (or is greater than a larger value), adding a photoresponse memristor structure 10 in parallel with the photosensitive unit 11 to increase the response current can improve the detector's recognition accuracy.

[0026] The first indium tin oxide electrode 1 of the photoresponse memristor structure 10 is electrically connected to the P-terminal of the photosensitive unit 11 via switch 4, and the palladium electrode 3 of the photoresponse memristor structure 10 is electrically connected to the N-terminal of the photosensitive unit 11. The positive and negative terminals of switch 4 are electrically connected to the P-terminal of the photosensitive unit 11 and the first indium tin oxide electrode 1, respectively. When the photosensitive unit 11 does not generate a response current or the change in the response current is very small, connecting switch 4 to connect the photoresponse memristor structure 10 and the photosensitive unit 11 in parallel increases the response current, thereby improving recognition accuracy. When the photosensitive unit 11 generates a changing response current under illumination, switch 4 is disconnected. At this time, only the photosensitive unit 11 responds to light, allowing the detector to recognize light intensity even under normal conditions, increasing the detector's application scenarios and improving its utilization rate.

[0027] The electrical connections between the photoresponse memristor structure 10, switch 4, and photosensitive unit 11 can be achieved via wires. For example, the positive terminal of switch 4 is electrically connected to the P-terminal of photosensitive unit 11 via a first wire 6, the negative terminal of switch 4 is electrically connected to the first indium tin oxide electrode 1 via a second wire 7, and the palladium electrode 3 is electrically connected to the N-terminal of photosensitive unit 11 via a third wire 8. The detector also includes an input wire 5 and an output wire 9. The input wire 5 is electrically connected to the P-terminal of photosensitive unit 11, and the output wire 9 is electrically connected to either the palladium electrode 3 or the N-terminal of photosensitive unit 11. Connecting the photoresponse memristor structure and the photosensitive unit via wires facilitates the placement of a switch between the photoresponse memristor and the photosensitive unit to switch between their parallel states.

[0028] The connection state between the photosensitive unit and the photoresponse memristor varies with illumination conditions. The main illumination conditions are shown below:

[0029] Under low light conditions, the photosensitive unit 11 has difficulty recognizing the light intensity, and therefore does not generate a response current, for example, when the light intensity is less than 1 nanowatt per square centimeter (nW / cm²). 2When the light intensity is less than or equal to a value smaller than the specified value, switch 4 needs to be manually connected to connect the photoresponse memristor structure 10 and the photosensitive unit 11 in parallel to increase the response current generated in the detector. This facilitates the photodetector structure within the detector to detect changes in the response current and identify the light intensity value. At this time, the palladium electrode 3 is grounded, and a voltage is applied to the first indium tin oxide electrode 1. When the molybdenum oxide thin film layer 2 absorbs ultraviolet light from the top first indium tin oxide electrode 1, electrons and holes are generated in the molybdenum oxide thin film layer 2. Photogenerated electrons are excited to the conduction band of the molybdenum oxide thin film layer 2. The electrons and protons generated by the light cause a change in the valence state of molybdenum ions (from +6 to +5), forming a hydrogen-molybdenum bronze phase with lower resistivity, which is a conductive phase, thus leading to a change in resistivity. Increasing the exposure time increases the content of the low-resistivity hydrogen-molybdenum bronze phase, further enhancing its conductivity and increasing the photoresponse current. The protons are generated by the reaction between the photogenerated holes and the water molecules absorbed in the molybdenum oxide thin film layer 2. The photodetector structure identifies the light intensity by measuring changes in the photoresponse current.

[0030] When the light intensity change is not significant, the photosensitive unit 11 has difficulty detecting weak light changes and therefore does not generate a changing response current. For example, when the light intensity change is less than 1 nanowatt per square centimeter (nW / cm2) or even less, the switch 4 needs to be manually connected to connect the photoresponse memristor structure 10 in parallel with the photosensitive unit 11. At this time, the palladium electrode 3 is grounded, and a voltage is applied to the first indium tin oxide electrode 1. When the molybdenum oxide thin film layer 2 absorbs ultraviolet light from the top first indium tin oxide electrode 1, electrons and holes are generated in the molybdenum oxide thin film layer 2. The photogenerated electrons are excited to the conduction band of the molybdenum oxide thin film layer 2. The electrons and protons generated by the light cause the valence state of molybdenum ions to change (from +6 to +5), forming a hydrogen-molybdenum bronze phase with lower resistivity, which is a conductive phase, thus leading to a change in resistivity. Increasing the exposure time at this time increases the content of the low-resistivity hydrogen-molybdenum bronze phase, further enhancing its conductivity and thus increasing the photoresponse current. The photodetector structure identifies the light intensity by measuring the change in the photoresponse current.

[0031] Under strong light conditions, the concentration of photogenerated carriers generated by the photosensitive unit 11 reaches saturation, therefore no change in response current is produced, for example, when the illumination is greater than 10 milliwatts per square centimeter (mW / cm²). 2When the light intensity is greater than or equal to a certain value, the switch 4 needs to be manually connected to connect the photoresponse memristor structure 10 in parallel with the photosensitive unit 11. At this time, the palladium electrode 3 is grounded, and a voltage is applied to the first indium tin oxide electrode 1. When the molybdenum oxide thin film layer 2 absorbs ultraviolet light from the top first indium tin oxide electrode 1, electrons and holes are generated in the molybdenum oxide thin film layer 2. Photogenerated electrons are excited to the conduction band of the molybdenum oxide thin film layer 2. The electrons and protons generated by the light cause a change in the valence state of molybdenum ions (from +6 to +5), forming a hydrogen-molybdenum bronze phase with lower resistivity, which is a conductive phase, thus leading to a change in resistivity. Increasing the exposure time at this time increases the content of the low-resistivity hydrogen-molybdenum bronze phase, further enhancing its conductivity and increasing the photoresponse current. The photodetector structure identifies the light intensity by measuring the change in the photoresponse current.

[0032] Under normal lighting conditions, the photosensitive unit 11 can generate a sufficient response current for identification, such as when the light intensity change is greater than 1 nanowatt per square centimeter (nW / cm²). 2 Illumination intensity greater than 1 nanowatt per square centimeter (nW / cm²) 2 And less than 1 milliwatt per square centimeter (mW / cm²) 2 When light shines on the intrinsic layer (I layer) of photosensitive unit 11, only photosensitive unit 11 responds to light, and switch 4 is manually disconnected. When light shines on the intrinsic layer (I layer) of photosensitive unit 11, the energy of the photons is absorbed by the semiconductor material. After absorbing the photons, electrons in the valence band gain enough energy to jump to the conduction band, leaving holes. Under the influence of the built-in electric field (formed by the P-type and N-type semiconductor interface), the generated electrons and holes are separated and drift to the N-type and P-type regions respectively. This process leads to the generation of current. The greater the light intensity, the more electron-hole pairs are generated, resulting in a larger photocurrent flowing through photosensitive unit 11. Conversely, a decrease in light intensity reduces the number of electron-hole pairs generated, and the photocurrent decreases accordingly. The photodetector structure measures the change in light intensity by measuring the response current generated by photosensitive unit 11.

[0033] Please see Figure 2 , Figure 2This is a schematic diagram of the detector structure proposed in this application. The detector structure includes a photoresponse memristor structure 10, a photosensitive unit 11, a substrate 18, a first protective layer 15, a second protective layer 16, a third protective layer 17, a first metal layer 14, a second metal layer 13, a third metal layer 20, and an insulating layer 12. The first protective layer 15 is placed on the side of the substrate 18 facing the photoresponse memristor structure 10, and the first metal layer 14 is placed on the side of the first protective layer 15 facing away from the substrate 18. The photosensitive unit 11 and the photoresponse structure are spaced apart on the side of the first metal layer 14 facing away from the first protective layer 15. The second metal layer 13 is partially in contact with the second indium tin oxide electrode, and the third metal layer 20 is partially in contact with the photoresponse memristor structure 10. The second protective layer 16 covers the insulating layer 12, the photosensitive unit 11, and the photoresponse memristor structure 10. The third protective layer 17 is disposed on the side of the insulating layer 12, the second metal layer 13, and the third metal layer 20 facing away from the substrate 18. In this detector structure, the first metal layer 14 is used to connect the P-terminal and the palladium electrode to the transmission line, the second metal layer 13 is used to conduct electricity to the N-terminal, and the third metal layer 20 is used to conduct electricity to the first indium tin oxide electrode. In this application, the first, second, and third protective layers can be silicon nitride, the insulating layer can be perfluoroalkoxy resin, and the first, second, and third metal layers can be aluminum or copper. In this application, the second metal layer 13 and the third metal layer 20 can be made of the same material.

[0034] The first protective layer 15 is used to prevent moisture in the air from entering the first metal layer 14. The second protective layer 16 is used to prevent moisture in the air from entering the photosensitive unit and the photoresponse memristor structure. The third protective layer 17 is used to prevent moisture in the air from entering the detector structure and causing short circuits or other problems. The photosensitive unit 11 and the photoresponse memristor structure 10 are spaced apart to achieve parallel connection.

[0035] The P-terminal of the photosensitive unit 11 is disposed on the side of the first metal layer 14 facing away from the substrate 18, and the N-terminal of the photosensitive unit 11 is also disposed on the side facing away from the substrate 18, where a second indium tin oxide electrode 19 is located. The photoresponse memristor structure 10 includes a first indium tin oxide electrode 1, a molybdenum oxide thin film layer 2, and a palladium electrode 3; the palladium electrode 3 is disposed on the side of the first metal layer 14 facing away from the substrate 18, the molybdenum oxide thin film layer 2 is disposed on the side of the palladium electrode 3 facing away from the substrate 18, and the first indium tin oxide electrode 1 is disposed on the side of the molybdenum oxide thin film layer 2 facing away from the substrate 18. When testing is required, a voltage is applied to the first indium tin oxide electrode 1 and the second indium tin oxide electrode 19, and the P-terminal of the photosensitive unit 11 and the palladium electrode 3 of the photoresponse memristor structure 10 are grounded. At this time, the photosensitive unit 11 is in a reverse bias state, which is a high resistance state, and current cannot pass through the photosensitive unit 11. The photoresponse memristor structure 10 generates a photoresponse current, and the photoresponse current generated by the photoresponse memristor structure 10 changes with the intensity of light. The indium tin oxide electrode itself has strong conductivity. When testing is not required, the photosensitive unit 11 is in a forward bias state, and the current flows from the P terminal to the N terminal, and is output through the second indium tin oxide electrode 19.

[0036] A third protective layer 17 is provided on the side of the first indium tin oxide electrode 1 facing away from the substrate 18. The third protective layer 17 has a first through-hole, and a third metal layer 20 is disposed within the first through-hole. The third metal layer 20 is used to connect the first indium tin oxide electrode 1 to an external circuit. A third protective layer 17 is provided on the side of the second indium tin oxide electrode 19 facing away from the substrate 18. The third protective layer 17 has a second through-hole for disposing of a second metal layer 13. The second metal layer 13 is used to connect the second indium tin oxide electrode 19 to an external circuit. The third protective layer 17 itself is non-conductive. The through-hole in the third protective layer 17 for disposing of the second metal layer 13 facilitates the application of voltage to the first indium tin oxide electrode 1 and the second indium tin oxide electrode 19.

[0037] When the palladium electrode 3 is grounded, under illumination and with a voltage applied to the first indium tin oxide electrode 1, when the molybdenum oxide thin film layer 2 absorbs ultraviolet light from the first indium tin oxide electrode 1, electrons and holes are generated in the molybdenum oxide thin film layer 2. Photogenerated electrons are excited to the conduction band of the molybdenum oxide thin film layer 2. The electrons and protons generated by the light cause a change in the valence state of molybdenum ions (from +6 to +5), forming a hydrogen-molybdenum bronze phase with lower resistivity, which is a conductive phase, thus leading to a change in resistivity. As the ultraviolet light intensifies, the content of the low-resistivity hydrogen-molybdenum bronze phase increases, and its conductivity is further enhanced. Therefore, by extending the exposure time under weak light, light intensity variation, or strong light, the photoresponse current change of the photoresponse memristor structure 10 under weak light intensity variation or high light intensity conditions can be increased, thereby increasing the detector's recognition accuracy.

[0038] Please see Figure 3This application also provides a detection method for use with the aforementioned detector.

[0039] S101, under illumination, when the response current generated by the photosensitive unit 11 does not change or does not generate a response current, the switch 4 is closed, so that the photoresponse memristor structure 10, the switch 4, and the photosensitive unit 11 form a parallel circuit. The photoresponse memristor structure 10 is used to generate a response current under illumination. The conductivity of the photoresponse memristor structure 10 changes with the illumination time. Increasing the exposure time can increase the change in the photoresponse current of the photoresponse memristor structure 10 under weak light intensity changes or high light intensity conditions. The detector also has a photodetector structure. The photodetector structure can identify the light intensity by monitoring the response current generated by the photosensitive unit 11 and the photoresponse memristor structure 10. Under weak light, light intensity changes are not obvious, or strong light conditions, when the photosensitive unit 11 does not generate a response current or the change in the generated response current is very small, adding the photoresponse memristor structure 10 in parallel with the photosensitive unit 11 to increase the response current can improve the detector's recognition accuracy.

[0040] S102, when the photosensitive unit 11 generates a changing response current under illumination, it causes switch 4 to be in the open state. This allows the detector to identify light intensity even under normal conditions, increasing the detector's application scenarios and improving its utilization rate.

[0041] The photoresponse memristor structure 10 includes a first indium tin oxide electrode 1, a molybdenum oxide thin film layer 2, and a palladium electrode 3. The first indium tin oxide electrode 1 is electrically connected to the P-terminal of the photosensitive unit 11 via a switch 4, and the palladium electrode 3 of the photoresponse memristor structure 10 is electrically connected to the N-terminal of the photosensitive unit 11. After detection, a reverse voltage is applied to the first indium tin oxide electrode 1, and the electric field within the photoresponse memristor structure 10 drives protons to drift towards the Pd electrode. As the protons are extracted from the molybdenum oxide thin film layer 2, the valence state of the molybdenum ions changes from 5+ back to 6+, causing the photoresponse memristor structure 10 to change from a low-resistance state to a high-resistance state. This restores the detector to a state where no incident light has been received, initializes the photoresponse memristor structure 10, enables it to be reused, and reduces production costs.

[0042] It should be noted that all directional indicators (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0043] Furthermore, the use of terms such as "first," "second," etc., in this application is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0044] In this application, unless otherwise expressly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0045] Furthermore, the technical solutions of the various embodiments of this application can be combined with each other, but only if they are based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this application.

[0046] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A detector, characterized in that, The device includes a photoresponse memristor structure, a switch, and a photosensitive unit. The photosensitive unit includes a P-terminal and an N-terminal. The first terminal of the photoresponse memristor structure is electrically connected to the P-terminal through the switch, and the second terminal of the photoresponse memristor structure is electrically connected to the N-terminal. When the response current generated by the photosensitive unit does not change or does not generate a response current under illumination, the switch is in a closed state. The photoresponse memristor structure, the switch, and the photosensitive unit form a parallel circuit. The photoresponse memristor structure is used to generate a response current under illumination.

2. The detector according to claim 1, characterized in that, The photoresponse memristor structure includes a first indium tin oxide electrode, a molybdenum oxide thin film layer, and a palladium electrode; the first indium tin oxide electrode is electrically connected to the P-terminal, and the palladium electrode is electrically connected to the N-terminal.

3. The detector according to claim 2, characterized in that, When the photosensitive unit generates a changing response current under illumination, the switch is in the open state.

4. The detector according to claim 3, characterized in that, The switch includes a positive terminal and a negative terminal. The positive terminal is electrically connected to the P terminal via a first wire, and the negative terminal is electrically connected to the first indium tin oxide electrode via a second wire. The palladium electrode is electrically connected to the N terminal via a third wire.

5. The detector according to claim 2, characterized in that, The detector also includes an input wire and an output wire, the input wire being electrically connected to the P terminal; the output wire being electrically connected to the palladium electrode or the N terminal.

6. The detector according to claim 2, characterized in that, The detector further includes a substrate and a first metal layer stacked together, the photoresponse memristor structure and the photosensitive unit are spaced apart, and both the photoresponse memristor structure and the photosensitive unit are located on the side of the first metal layer facing away from the substrate; The first metal layer connects the P-terminal and the palladium electrode.

7. The detector according to claim 6, characterized in that, The detector further includes a first protective layer and a second protective layer; the first protective layer is disposed between the substrate and the first metal layer, and the second protective layer covers the photosensitive unit, the first metal layer and the photoresponse memristor structure.

8. The detector according to claim 6, characterized in that, The palladium electrode is disposed on the side of the first metal layer facing away from the substrate, the molybdenum oxide thin film layer is disposed on the side of the palladium electrode facing away from the first metal layer, and the first indium tin oxide electrode is disposed on the side of the molybdenum oxide thin film layer facing away from the palladium electrode.

9. The detector according to claim 7, characterized in that, The detector further includes a second metal layer, a third metal layer, and a second indium tin oxide electrode; the second indium tin oxide electrode is disposed between the N-terminus and the second protective layer; the second protective layer is provided with a first through-hole and a second through-hole, the second metal layer passes through the first through-hole and is connected to the second indium tin oxide electrode; the third metal layer passes through the second through-hole and is connected to the first indium tin oxide electrode.

10. The detector according to claim 9, characterized in that, The detector further includes a third protective layer, which covers the side of the second metal layer facing away from the second indium tin oxide electrode, the side of the third metal layer facing away from the first indium tin oxide electrode, and the side of the second protective layer facing away from the first indium tin oxide electrode.

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