Wafer sucker

Abstract

The utility model provides a wafer suction cup which comprises a base, a concave part is concentrically arranged on the surface of the base, a wafer is arranged on the surface profile between the concave part and the base, at least one first adsorption part is arranged on the surface profile between the concave part and the base, and at least one second adsorption part is arranged in the concave part of the base. The first adsorption part is used for adsorbing the edge part of the wafer; the second adsorption part is used for providing a certain gas pressure to prevent the wafer from deforming; by arranging the hollow sunken part, the functional area of the wafer is in a suspended state, so that the situation that the optical performance of the surface of the wafer is affected due to adsorption indentations generated in the high-speed rotation process of the wafer is prevented; and on the other hand, the pressure difference between the upper surface and the lower surface of the wafer in the high-speed rotation process is improved by controlling the air pressure of the hollow sunken part, so that the structural deformation of the wafer is prevented, the wafer warping is avoided, and therefore, the deformation problem of different positions is improved, and the warping phenomenon is prevented.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a wafer chuck. Background Technology

[0002] In semiconductor manufacturing processes, a crucial step is wafer spin coating. However, existing wafer chucks, with their larger diameter than the wafer, easily leave chuck marks on the wafer surface during spin coating, impacting wafer performance. This is especially true for glass or resin wafers, which have very small thicknesses (as low as 0.1 mm). The existing chucks cause microscopic deformation during wafer attachment, severely affecting the final product and reducing yield. Therefore, improving wafer chucks is a challenge for those skilled in the art. Utility Model Content

[0003] This invention provides a wafer chuck that improves the existing wafer chuck adsorption method to avoid generating chuck marks on the wafer surface and prevent microscopic deformation of the wafer during adsorption, thereby improving the yield of end products.

[0004] A wafer chuck includes a base with a recessed portion concentrically disposed on the surface of the base. A wafer is disposed on a surface contour between the recessed portion and the base. At least one first adsorption portion is disposed on the surface contour between the recessed portion and the base, and at least one second adsorption portion is disposed in the recessed portion of the base. The first adsorption portion is used to adsorb the edge portion of the wafer. The second adsorption portion is used to provide a certain gas pressure to prevent the wafer from deforming.

[0005] Furthermore, both the first adsorption section and the second adsorption section have a porous structure.

[0006] In some other embodiments, at least one of the first adsorption portions is connected via a gas channel within the base.

[0007] Furthermore, at least one of the second adsorption units is connected through a gas channel within the base.

[0008] Furthermore, the diameter of the recess is smaller than the diameter of the base.

[0009] Optionally, in some other embodiments, the second adsorption portion controls the gas pressure within the recessed portion, so that the pressure on the upper and lower surfaces of the wafer remains consistent.

[0010] Optionally, in some other embodiments, at least one annular groove is provided on the surface contour between the recess and the base, and the first adsorption portion is disposed in the annular groove.

[0011] Furthermore, the depth of the second adsorption section is 30mm to 2cm.

[0012] Furthermore, a plurality of annular grooves are provided on the surface contour between the recessed portion and the base, and the first adsorption portion is respectively disposed in different annular grooves.

[0013] Furthermore, in some other embodiments, at least one of the annular grooves is concentrically arranged.

[0014] Unlike existing wafer chuck adsorption methods, this application uses a hollow recess to suspend the functional areas of the wafer, preventing adsorption indentations during high-speed rotation that could affect the optical properties of the wafer surface. The wafer's edge, rather than its functional areas, is adsorbed by the surface contour between the recess and the base. Furthermore, by controlling the air pressure in the hollow recess, the pressure difference between the upper and lower surfaces of the wafer during high-speed rotation is improved, preventing structural deformation and wafer warping. This addresses deformation issues at different locations and prevents warping. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A schematic diagram of the structure of a wafer chuck provided by this utility model Figure 1 ;

[0017] Figure 2 A schematic diagram of the structure of a wafer chuck provided by this utility model Figure 2 ;

[0018] Figure 3 A schematic diagram of the structure of a wafer chuck provided by this utility model Figure 3 ;

[0019] Figure 4 A schematic diagram of the structure of a wafer chuck provided by this utility model Figure 4 . Detailed Implementation

[0020] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0021] This utility model provides a wafer chuck, such as Figures 1-4 As shown, especially for glass wafers or resin wafers, this method aims to improve the state of glass wafers or resin wafers during the adsorption process, prevent adsorption marks or imprints on their wafer surfaces, and prevent microscopic deformation of the wafers during the adsorption process, thereby improving the product yield of the wafers in operations such as spin coating and improving existing semiconductor processes.

[0022] A wafer chuck includes a base 100, a recess 30 concentrically disposed on the surface of the base 100, a wafer disposed on a surface contour between the recess 30 and the base, at least one first adsorption part 20 disposed on the surface contour between the recess 30 and the base, and at least one second adsorption part 10 disposed in the recess 30 of the base 100; the first adsorption part 20 is used to adsorb the edge of the wafer; the second adsorption part 10 is used to provide a certain gas pressure to prevent the wafer from deforming.

[0023] In detail, such as Figures 1-4 As shown, a recessed portion 30 is provided on the surface of the base 100. The recessed portion 30 is concentrically arranged with the base 100, and the diameter of the recessed portion is smaller than the diameter of the base 100, so that a surface contour is formed between the recessed portion and the base 100. On this surface contour, a first adsorption portion 20 is provided at any position. The position of the first adsorption portion 20 on the surface contour is not limited in this application and can be arbitrary.

[0024] The first adsorption section 20 is used to adsorb the edge portion of the wafer. The edge portion described in this application refers to a non-wafer functional area, where core components such as optical structures are not formed. Those skilled in the art understand that optical structures are typically not formed at the edge portion of the wafer; they are mainly concentrated in the central region of the wafer, where functional areas include optical structures. Therefore, this application utilizes this edge portion to achieve the adsorption function, changing the existing wafer adsorption method. This avoids adsorption marks in the functional areas of the wafer, and the functional areas containing optical structures are free of adsorption marks, thereby improving wafer adsorption quality and reducing product defect rates.

[0025] Furthermore, the number of first adsorption sections 20 is not limited, in Figure 2The diagram shows a configuration including two first adsorption units 20; of course, multiple first adsorption units 20 can be provided as needed. The position of each first adsorption unit 20 can be different. The selection is based on the specific wafer material or semiconductor process requirements, and can be limited according to specific circumstances. Multiple first adsorption units 20 are connected by gas channels within the base 100.

[0026] In some other embodiments, the first adsorption portion can be a porous structure for adsorption. Other structures with adsorption functions may also be used; however, these will not be listed individually in this invention, as long as the purpose of this application is achieved.

[0027] The first adsorption section is connected to a gas pressure control device, which is used to control the magnitude of the adsorption force when adsorbing wafers.

[0028] In some other embodiments, a groove 40 is provided on the surface contour between the recessed portion 30 and the base, and the first adsorption portion 20 is disposed in the groove 40. The specific position and depth of the groove 40 on the surface contour are limited based on the specific adsorption position and the wafer size, which is easily implemented. The position of the first adsorption portion 20 in the groove can be suitably selected according to the specific adsorption conditions, etc. This application does not limit the specific number and position of the first adsorption portion 20.

[0029] Furthermore, in this application, a second adsorption portion 10 is provided in the recess 30 on the surface of the base 100, such as... Figure 2 As shown, the second adsorption portion 10 is located in the recessed portion 30; of course, Figure 2 The above is merely one example of the second adsorption section and does not constitute a limitation on its position and structure; the function of the second adsorption section 10 is to provide a certain gas pressure when placing the wafer through a gas pressure device to prevent the wafer from deforming.

[0030] In some other embodiments, a plurality of annular grooves are provided on the surface contour between the recessed portion 30 and the base 100, and the first adsorption portion is respectively disposed in different annular grooves.

[0031] Furthermore, multiple annular grooves are concentrically arranged to form multiple concentric groove structures. The concentric arrangement here includes multiple annular grooves being concentrically arranged as well as annular grooves and recesses being concentrically arranged; the diameters of the different annular grooves are different.

[0032] Those skilled in the art can select the number and position of the second adsorption part 10 according to the specific adsorption requirements and wafer properties. In this regard, the present invention does not limit the position and number.

[0033] In this embodiment, the second adsorption part 10 controls the gas pressure between the wafer and the recess when the wafer is placed on the base 100 by a gas pressure control device, thereby preventing deformation of different areas of the wafer during spin coating. In particular, for glass wafers or resin wafers, the second adsorption part 10 can prevent deformation of the middle part of the glass wafer or resin wafer during spin coating.

[0034] like Figure 2 and Figure 4 As shown, the second adsorption part 10 can be a through-hole structure, which can be used to control the gas pressure; of course, it can also be other structures, depending on whether the gas pressure in the recessed part 30 is controlled. The present invention does not limit the specific structure.

[0035] The depth of the second adsorption section 10 is 30mm to 2cm.

[0036] Multiple second adsorption units 10 are connected through gas channels, and the gas pressure of the multiple second adsorption units 10 is controlled by a gas control device.

[0037] In this application, a negative or positive pressure can be applied to the cavity when the wafer is placed on the base 100 via the second adsorption section 10 to improve the air pressure situation on the upper and lower surfaces of the wafer during the coating process, thereby preventing microscopic deformation caused by high-speed rotation of the wafer and preventing wafer warping. Therefore, ensuring air pressure balance on the upper and lower surfaces of the wafer via the second adsorption section 10 is beneficial.

[0038] Of course, the air pressure in the cavity recess 30 can be adjusted in real time according to the change of the surrounding air pressure during the high-speed rotation of the wafer, so as to maintain a constant air pressure and prevent microscopic deformation of the wafer.

[0039] This application uses a hollow recess 30 to suspend the functional areas of the wafer, thereby preventing adsorption indentations that would affect the optical properties of the wafer surface during high-speed rotation. On the other hand, by controlling the air pressure in the hollow recess 30, the pressure difference between the upper and lower surfaces of the wafer during high-speed rotation is improved, thus preventing structural deformation and improving deformation problems at different locations.

[0040] The specific embodiments described above do not constitute a limitation on the scope of protection of this utility model. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the scope of protection of this utility model.

Claims

1. A wafer chuck, characterized by, The base includes a concave part arranged concentrically on the surface of the base, a wafer is arranged on the surface profile between the concave part and the base, at least one first adsorption part is arranged on the surface profile between the concave part and the base, and at least one second adsorption part is arranged in the concave part of the base; the first adsorption part is used for adsorbing the edge part of the wafer; and the second adsorption part is used for providing a certain gas pressure to prevent the wafer from deforming.

2. The wafer chuck of claim 1, wherein The first adsorption part is a hole structure, and the second adsorption part is a hole structure.

3. The wafer chuck of any of claims 1-2, wherein, At least one first adsorption part is communicated through a gas channel in the base.

4. The wafer chuck of any one of claims 1 to 2, wherein At least one second adsorption part is communicated through a gas channel in the base.

5. The wafer chuck of claim 1 wherein, The diameter of the concave part is smaller than the diameter of the base.

6. The wafer chuck of claim 2 wherein, The second adsorption part controls the gas pressure in the concave part, so that the pressure of the upper surface and the lower surface of the wafer is consistent.

7. The wafer chuck of claim 1 or 6, wherein At least one annular groove is arranged on the surface profile between the concave part and the base, and the first adsorption part is arranged in the annular groove.

8. The wafer chuck of claim 5 wherein, The depth of the second adsorption part is 30mm-2cm.

9. The wafer chuck of claim 7 wherein, A plurality of annular grooves are arranged on the surface profile between the concave part and the base, and the first adsorption parts are respectively arranged in different annular grooves.

10. The wafer chuck of claim 7 wherein, At least one annular groove is arranged concentrically.

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