Packaging structure and power module

Abstract

The embodiment of the utility model discloses a packaging structure and a power module using the packaging structure. The power module comprises a plurality of power devices and a packaging structure. The packaging structure comprises a bottom plate, a plurality of packaging substrates, a shell, at least one baffle and a sealing layer. The package substrate is located on the base plate. The shell is located on the bottom plate and wraps the packaging substrate. The baffle plate is located on the bottom plate and defines the shell into a plurality of discrete spaces, and each discrete space comprises one or more packaging substrates. A sealing layer fills the discrete spaces to cover the power device and the package substrate in each discrete space. The plurality of power devices are arranged in the plurality of discrete spaces, and the sealing layers are respectively encapsulated in the discrete spaces, so that the spreading area of the encapsulation process is reduced, and the surfaces of the sealing layers after encapsulation and curing are smoother. And the power devices in each discrete space are fewer, the generated heat is less, the thermal stress is smaller, and the failure risk of the power devices and the leads is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of integrated circuit as a whole, more particularly, the utility model relates to a packaging structure and power module. BACKGROUND

[0002] Power semiconductors are used for electric energy conversion and electric energy control, and are key devices for electric energy conversion and electric energy control. Power semiconductors are widely used in advanced rail transit, power transmission and distribution, electric vehicles, new energy, intelligent home appliances and other fields. Various application scenarios have increasingly high requirements for the performance and reliability of power semiconductors and their packaging. The existing sealing layer of power semiconductors includes inorganic materials and organic materials. The existing sealing layer has problems such as high sintering temperature, poor thermal expansion coefficient matching, and large thermal stress. SUMMARY

[0003] The packaging structure and power module provided by the embodiments of the present application have higher reliability.

[0004] According to an aspect of the embodiments of the present application, a packaging structure of a power module is provided.

[0005] The packaging structure includes a bottom plate, a plurality of packaging substrates, a shell, at least one baffle, and a sealing layer. The packaging substrates are located on the bottom plate. The shell is located on the bottom plate, and the shell wraps the packaging substrates. The baffle is located on the bottom plate and defines a plurality of discrete spaces from the shell, and each discrete space contains one or more packaging substrates. The sealing layer fills the discrete spaces to cover the power devices and the packaging substrates in each discrete space.

[0006] In some embodiments, the shell and the baffle are an integral structure.

[0007] In some embodiments, the upper surface of the sealing layer after being fixed and shaped is provided with metal heat dissipation fins.

[0008] In some embodiments, the sealing layer is an epoxy resin layer.

[0009] In some embodiments, the sealing layer is one or a combination of a silicone gel layer, a moisture-proof coating, and a sulfurization-proof coating.

[0010] In some embodiments, the sealing layer includes a first sealing layer and a second sealing layer. The first sealing layer is an epoxy resin layer, the first sealing layer covers the power devices, and the second sealing layer covers the first sealing layer. The second sealing layer is one or a combination of a silicone gel layer, a moisture-proof coating, and a sulfurization-proof coating.

[0011] In some embodiments, the packaging substrate includes a substrate, a first metal layer on a first surface of the substrate, and a second metal layer on a second surface of the substrate.

[0012] In some embodiments, the discrete space is provided with a conductive structure, the conductive structure includes a first conductive structure and a second conductive structure, the first conductive structure electrically connects the bonding point on the front surface of the power device and the first metal layer of the packaging substrate, the second conductive structure is arranged between the power device and the packaging substrate, and the conductive structure electrically connects the back surface of the power device and the first metal layer of the packaging substrate.

[0013] In some embodiments, the sealing layer includes a first potting layer and a second potting layer, the first potting layer is an epoxy layer, the first conductive structure and the front surface of the power device are located in the first potting layer, and the second potting layer covers the first potting layer, and the second potting layer is one or a combination of a silica gel layer, a moisture-proof coating, and a sulfurization-proof coating.

[0014] In some embodiments, the plurality of discrete spaces includes a first discrete space, a second discrete space, and a third discrete space, one or more power devices in the first discrete space are used to drive a U-phase coil of the motor, one or more power devices in the second discrete space are used to drive a V-phase coil of the motor, and one or more power devices in the third discrete space are used to drive a W-phase coil of the motor.

[0015] According to another aspect of the embodiments of the present application, a power module is provided. The power module includes a plurality of power devices and a packaging structure. The packaging structure includes a bottom plate, a plurality of packaging substrates, a shell, at least one baffle, and a sealing layer. The packaging substrates are located on the bottom plate. The shell is located on the bottom plate, and the shell wraps the packaging substrates. The baffle is located on the bottom plate and defines a plurality of discrete spaces from the shell, each discrete space containing one or more packaging substrates. The sealing layer fills the discrete spaces to cover the power devices and the packaging substrates in each discrete space.

[0016] In some embodiments, the shell and the baffle are an integral structure.

[0017] In some embodiments, an upper surface of the sealing layer after being fixed and shaped is provided with metal heat dissipation fins.

[0018] In some embodiments, the sealing layer is an epoxy layer.

[0019] In some embodiments, the sealing layer is one or a combination of a silica gel layer, a moisture-proof coating, and a sulfurization-proof coating.

[0020] In some embodiments, the sealing layer comprises a first potting layer and a second potting layer, the first potting layer is an epoxy layer, the first potting layer covers the power device, the second potting layer covers the first potting layer, and the second potting layer is one or a combination of a silicone gel layer, a moisture-proof coating layer, and a sulfurization-proof coating layer.

[0021] In some embodiments, the packaging substrate comprises a substrate, a first metal layer on a first surface of the substrate, and a second metal layer on a second surface of the substrate.

[0022] In some embodiments, the discrete space is provided with a conductive structure, the conductive structure comprises a first conductive structure and a second conductive structure, the first conductive structure electrically connects the bonding point on the front surface of the power device and the first metal layer of the packaging substrate, and the second conductive structure is arranged between the power device and the packaging substrate, and the conductive structure electrically connects the back surface of the power device and the first metal layer of the packaging substrate.

[0023] In some embodiments, the sealing layer comprises a first potting layer and a second potting layer, the first potting layer is an epoxy layer, the first conductive structure and the front surface of the power device are located in the first potting layer, the second potting layer covers the first potting layer, and the second potting layer is one or a combination of a silicone gel layer, a moisture-proof coating layer, and a sulfurization-proof coating layer.

[0024] In some embodiments, the plurality of discrete spaces comprises a first discrete space, a second discrete space, and a third discrete space, one or more power devices in the first discrete space are used to drive a U-phase coil of the motor, one or more power devices in the second discrete space are used to drive a V-phase coil of the motor, and one or more power devices in the third discrete space are used to drive a W-phase coil of the motor.

[0025] By arranging a plurality of power devices in a plurality of discrete spaces and potting a sealing layer in each discrete space, the spreading area of the potting process is reduced, the surface of the sealing layer after curing is more flat, and the thermal stress in each discrete space is smaller, thereby reducing the failure risk of the power device and the lead wire. In addition, using epoxy as the sealing layer can block the erosion of H2S gas to the packaging substrate and the lead wire, thereby improving the reliability of the packaging. BRIEF DESCRIPTION OF DRAWINGS

[0026] The above and other objects, features and advantages of the present application will become more apparent from the following description of embodiments of the present application, taken in conjunction with the accompanying drawings, in which:

[0027] Figure 1 A cross-sectional view of a power module according to an embodiment of the present application is shown.

[0028] Figure 2 a top view of a package structure of the power module of an embodiment of the present application is shown;

[0029] Figure 3 a cross-sectional view of a power module of another embodiment of the present application is shown;

[0030] Figure 4 a cross-sectional view of a power module of another embodiment of the present application is shown;

[0031] Figure 5 a cross-sectional view of a power module of another embodiment of the present application is shown;

[0032] Figure 6 a cross-sectional view of a power module of another embodiment of the present application is shown;

[0033] Figure 7 a cross-sectional view of a power module of another embodiment of the present application is shown;

[0034] Figure 8 a cross-sectional view of a power module of another embodiment of the present application is shown;

[0035] Figure 9 a circuit topology of an exemplary power module of the present application is shown;

[0036] Figure 10 a top view of an exemplary package structure of the power module is shown; and

[0037] Figure 11 a partial cross-sectional view of the package structure of the power module is shown. DETAILED DESCRIPTION

[0038] The present application is described herein based on embodiments, but the present application is not limited to these embodiments. In the following detailed description of the present application, some specific details are described in order to provide a thorough understanding of the present application. The present application can be fully understood without these specific details. In order to avoid obscuring the essence of the present application, well-known methods, procedures, processes, elements, and circuits are not described in detail.

[0039] In addition, it should be understood by those of ordinary skill in the art that the drawings provided herein are for illustrative purposes only and are not necessarily drawn to scale.

[0040] Unless the context clearly requires otherwise, throughout the description, the words "comprise", "comprising", and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is to say, in the sense of "including, but not limited to".

[0041] In the description of the present application, it should be understood that the terms "first", "second" and the like are used to describe various elements, but are not used to indicate or imply relative importance. In addition, in the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0042] Figure 1 A cross-sectional view of the power module is shown. Figure 2 A top view of the packaging structure is shown. The power module includes a plurality of power devices 101 and a packaging structure. The power devices 101 can be integrated circuit chips or discrete devices (e.g., resistors, capacitors, inductors, diodes, etc.). The power devices 101 are dies, for example, obtained by cutting from a wafer after chip manufacturing is completed. Through the packaging structure, these power devices 101 are electrically connected and packaged together according to a certain circuit topology, realizing electrical connection with external elements of the module. The packaging structure also provides mechanical support, heat dissipation, and protection for the power devices 101. The packaging structure includes a bottom plate 111, a plurality of packaging substrates 110, a shell, at least one baffle, and a sealing layer. The bottom plate 111 is used for heat dissipation. The material of the bottom plate 111 is, for example, copper. The bottom plate 111 includes a first surface and a second surface. The second surface of the bottom plate 111 is provided with a heat dissipation device. The heat dissipation device can be, for example, a heat sink, a heat pipe, a liquid cooling device, etc. The shell, the baffle, and the packaging substrates 110 are all arranged on the bottom plate 111, and the shell wraps the packaging substrates 110. Figure 1 In an exemplary embodiment, the heat dissipation device is a columnar structure or a sheet structure, which has a large surface area and is beneficial for heat dissipation. The heat dissipation device can also be a liquid cooling device, etc. The shell, the baffle, and the packaging substrates 110 are all arranged on the bottom plate 111, and the shell wraps the packaging substrates 110.

[0043] The baffle defines a plurality of separate spaces for the shell, each of which contains one or more packaging substrates 110 and one or more power devices 101. The sealing layer fills the separate spaces to cover the power devices 110 and the packaging substrates 111 in the separate spaces. The materials of the shell and the baffle are, for example, plastic, such as PPS resin, PBT resin. In some embodiments, the shell and the baffle are integrally formed. In Figure 1 In an example, the shell and the baffle define a separate space 11, a separate space 13, and a separate space 15. The number of separate spaces is not limited to three, and can be any integer greater than two. The plurality of power devices 101 of the power module is distributed in the plurality of separate spaces.

[0044] The packaging substrate 110 is disposed on the base plate 111, and the power device 101 in the discrete space is disposed on the packaging substrate 110 and electrically connected to the packaging substrate 110. The packaging substrate 110 is, for example, a thin-film ceramic substrate (TFC), a thick-film printed ceramic substrate (TPC), a co-fired multilayer ceramic substrate (TCC), a direct bonded copper ceramic substrate (DBC), a direct bonded aluminum ceramic substrate (DBA), a direct plated copper ceramic substrate (DPC), an active metal-bonded ceramic substrate (AMB), a directly sputtered copper ceramic substrate (DSC), and a laser activated metal-ceramic substrate (LAM), etc.

[0045] The power device 101 has a front side (first surface) and a back side (second surface). Bonding points are provided on the front side of the power device 101, and / or a metal layer is provided on the back side of the power device 101. A conductive structure is provided within the discrete space, the conductive structure including a first conductive structure and / or a second conductive structure. The first conductive structure electrically connects the bonding points on the front side of the power device 101 to the first metal layer of the packaging substrate 110, and the second conductive structure is disposed between the power device 101 and the packaging substrate 110, electrically connecting the metal layer on the back side of the power device 101 to the first metal layer of the packaging substrate 110.

[0046] The first conductive structure is, for example, a lead 115. Bonding points on the front side of the power device 101 are electrically connected to the package substrate 110 via the lead 115. The lead 115 can be, for example, a gold wire, aluminum wire, copper wire, silver wire, or palladium-plated copper wire (PCC). The second conductive structure is, for example, a solder layer. The back side of the power device 101 is electrically connected to the package substrate 110 via the solder layer.

[0047] The sealing layer fills the discrete space and covers the power device 101. The sealing layer material is, for example, epoxy resin. Epoxy resin can prevent H2S gas from corroding the packaging substrate and leads, improving the reliability of the package. The sealing layer may also include one or a combination of silicone gel layer, moisture-proof coating, and anti-sulfurization coating.

[0048] The encapsulation structure can be formed by the following method: The housing and baffle are positioned at predetermined locations on the base plate 111. For example... Figure 2 As shown, the housing, baffle, and base plate 111 define multiple potting spaces. Power devices 101 are mounted on corresponding packaging substrates, and electrical connections are established between the power devices 101 and the packaging substrates. The packaging substrates are placed within the potting spaces. Sealant is poured into the potting spaces and allowed to cure to form a sealing layer.

[0049] In some embodiments, a thermally conductive layer is further provided between the packaging substrate 110 and the bottom plate 111, which is used to transfer the heat generated by the power module to the bottom plate 111. In other embodiments, as shown in Figure 1 an interconnection substrate 113 is provided between the packaging substrate 110 and the bottom plate 111. The interconnection substrate 113 is, for example, a PCB board. For example, the packaging substrate 110 can provide the interconnection between the chips, and the interconnection substrate 113 can provide the interconnection between the chips and the outside.

[0050] In the prior art, all the power devices 101 of the power module are arranged in one packaging space, the spreading area of the potting process is large, the surface after the sealing material is poured in and solidified is uneven, the number of chips in the packaging space is large, the thermal stress is large, and the failure risk of the power devices and the leads is increased. According to the packaging structure of the present application, the shell and the baffle define a plurality of discrete spaces, each of which serves as an independent potting space, the power devices 101 of the power module are arranged in a plurality of potting spaces, each potting space has a smaller volume, the spreading area of the potting process is smaller, the surface after the sealing material is poured in and solidified is more even, the number of chips in each discrete space is reduced, the heat generation is reduced, the generated heat is reduced, the thermal stress is smaller, and the failure risk of the power devices and the leads is reduced.

[0051] Figure 3 A cross-sectional view of a power module of another embodiment of the present application is shown. As shown in Figure 3 The power module includes a plurality of power devices 101 and a packaging structure. Through the packaging structure, the power devices 101 are electrically connected and packaged together according to a certain circuit topology, and the electrical connection with elements outside the module is realized. The packaging structure includes a bottom plate 111, a plurality of packaging substrates, a shell, at least one baffle, and a sealing layer. The shell and the baffle are located on the bottom plate 111 and define a plurality of discrete spaces 11, 13, and 15. The shell and the baffle are, for example, integrally formed. The plurality of power devices 101 of the power module are distributed in the plurality of discrete spaces. Each discrete space is used to accommodate one or more power devices 101. The discrete space contains a packaging substrate, and the sealing layer fills the discrete space and covers the power devices 101 and the packaging substrate in the discrete space. The power devices 101 are arranged on and electrically connected to the packaging substrate. The sealing layer at least includes epoxy resin. The epoxy resin can block the erosion of H2S gas to the packaging substrate and the lead, and improve the reliability of the packaging.

[0052] The packaging substrate includes: a substrate 107, a first metal layer 105 located on a first surface of the substrate 107, and a second metal layer 109 located on a second surface of the substrate 107. The substrate 107 is, for example, a ceramic substrate. The materials of the first metal layer 105 and the second metal layer 109 are, for example, copper or AlSiC. The first metal layer 105 and the second metal layer 109 are patterned metal layers. In one embodiment, the packaging substrate is a DPC substrate, and the first metal layer 105 and the second metal layer 109 are electrically connected through conductive vias penetrating the substrate 107. Bonding points located on the front side of the power device 101 are electrically connected to the first metal layer 105 of the packaging substrate via leads 115, and metal layers located on the back side of the power device 101 are electrically connected to the first metal layer 105 of the packaging substrate via solder layers 103. Leads 115 are, for example, gold wires, aluminum wires, copper wires, silver wires, palladium-plated copper wires, etc. Solder layers 103 are located between the power device 101 and the packaging substrate. The power device 101 is connected to the circuit topology through the packaging substrate.

[0053] like Figure 3 As shown, an interconnect substrate 113 is disposed between the packaging substrate and the base plate 111. The interconnect substrate 113 is, for example, a PCB board. A solder layer is disposed between the second metal layer 109 of the packaging substrate and the interconnect substrate 113, thereby electrically connecting the first metal layer 105 and the interconnect substrate 113.

[0054] According to the packaging structure of this application, the housing and baffle define multiple potting spaces. The power devices 101 of the power module are disposed in multiple potting spaces. Each potting space has a smaller volume, the spreading area of ​​the potting process is reduced, the surface of the sealing layer after potting and curing is smoother, the number of power devices in each discrete space is reduced, the heat generation is reduced, the thermal stress is smaller, and the failure risk of power devices and leads is reduced.

[0055] Figure 4 A cross-sectional view of a power module according to another embodiment of this application is shown. Figure 3 Based on the embodiments shown, Figure 4 The illustrated embodiment also includes a metal heat sink 117. The metal heat sink 117 is disposed on the upper surface of the fixed sealing layer. The material of the metal heat sink 117 is, for example, copper. The metal heat sink 117 can reduce the thermal resistance of the entire power module.

[0056] Figure 5 A cross-sectional view of a power module according to another embodiment of this application is shown. Figure 3 Based on the embodiments shown, Figure 5The illustrated embodiment also includes a cover plate 119. The cover plate 119 is disposed on the upper surface of the fixedly molded sealing layer. The cover plate 119 can close the upper opening of the discrete space. The cover plate 119 can protect the sealant. The material of the cover plate 119 is, for example, plastic. When the sealing layer is epoxy resin, the cover plate 119 may not be provided.

[0057] Figure 6 A cross-sectional view of a power module according to another embodiment of this application is shown. Figure 4 or Figure 5 Based on the embodiments shown, Figure 6 The illustrated embodiment also includes a snap-fit ​​mechanism. The snap-fit ​​mechanism is used to secure the metal heat sink 117 or the cover plate 119. The snap-fit ​​mechanism is, for example, located on the housing.

[0058] Figure 7 A cross-sectional view of a power module according to another embodiment of this application is shown. Figure 7 As shown, the sealing layer includes a first potting layer and a second potting layer. The first and second potting layers are made of different materials. The first potting layer is, for example, an epoxy resin layer. The second potting layer is, for example, one or a combination of silicone gel layer, moisture-proof coating, and anti-sulfurization coating. The first potting layer covers the one or more power devices, and the second potting layer covers the first potting layer. Figure 7 In the illustrated embodiment, lead 115 is located within the first potting layer. The upper surface of the first potting layer is higher than the apex of lead 113, and lead 115 is completely contained within the first potting layer. By providing a second potting layer on top of the first potting layer, the sealing layer can meet the requirements of high junction temperature applications, reduce thermal stress, and simultaneously reduce costs.

[0059] Figure 8 A partial cross-sectional view of a power module according to another embodiment of this application is shown. Figure 8 As shown, the sealing layer includes a first potting layer and a second potting layer. The first and second potting layers are made of different materials. The first potting layer is an epoxy resin layer. The second potting layer is one or a combination of silicone gel layer, moisture-proof coating, and anti-sulfurization coating. The bonding points 121 on the first surface of the power device are covered by the first potting layer, and the second potting layer covers the first potting layer. Figure 8 In the illustrated embodiment, the epoxy resin only covers the bonding points on the first surface of the power device, and does not need to cover the entire lead 115. A portion of the lead 115 can be located in the second potting layer. This reduces costs. Since the bonding points 123 on the first metal layer 105 of the packaging substrate are lower than the bonding points 121 on the first surface of the power device, when the first potting layer covers the bonding points 121 on the first surface of the power device, it naturally also covers the bonding points 123 on the first metal layer 105 of the packaging substrate.

[0060] Figure 9A circuit topology of an exemplary power module of the present application is shown. The power module of the present application is used to drive a motor, for example. The power module is a power inverter, for example. Figure 9 A circuit topology of a power inverter is shown. The power module includes switching tubes C1-C6 and diodes D1-D6. The switching tubes C1-C6 are Insulate-Gate Bipolar Transistors (IGBTs), for example. The diodes D1-D6 are Fast recovery diodes (FRDs), for example. The diodes D1-D6 are connected in parallel with the switching tubes C1-C6, respectively. The Insulate-Gate Bipolar Transistor has the advantages of low saturation voltage drop, large current density, small driving power, fast switching speed, etc.

[0061] The switching tubes C1 and C2 are connected in series between the positive DC+ and negative DC- of the DC power supply, and the node between the switching tubes C1 and C2 is connected to the U-phase winding of the motor. The switching tubes C1 and C2 are used to drive the U-phase winding of the motor.

[0062] The switching tubes C3 and C4 are connected in series between the positive DC+ and negative DC- of the DC power supply, and the node between the switching tubes C3 and C4 is connected to the V-phase winding of the motor. The switching tubes C3 and C4 are used to drive the V-phase winding of the motor.

[0063] The switching tubes C5 and C6 are connected in series between the positive DC+ and negative DC- of the DC power supply, and the node between the switching tubes C5 and C6 is connected to the W-phase winding of the motor. The switching tubes C5 and C6 are used to drive the W-phase winding of the motor.

[0064] The controller generates control signals to control the turn-on and turn-off of the switching tubes C1-C6, and the control signals are provided to the gates of the switching tubes C1-C6.

[0065] In some embodiments, the switching tubes C1-C6 and the diodes D1-D6 are all individual power devices 101, or the switching tubes and the corresponding diodes are individual power devices 101. The switching tubes C1 and C2 and the diodes D1 and D2 constitute a first power device group, the switching tubes C3 and C4 and the diodes D3 and D4 constitute a second power device group, and the switching tubes C5 and C6 and the diodes D5 and D6 constitute a third power device group. In combination Figure 1 The housing and the baffle define a first discrete space 11, a second discrete space 12, and a third discrete space 13. The switching tubes C1 and C2 and the diodes D1 and D2 are arranged in the first discrete space 11, the switching tubes C3 and C4 and the diodes D3 and D4 are arranged in the second discrete space 12, and the switching tubes C5 and C6 and the diodes D5 and D6 are arranged in the third discrete space 13.

[0066] In the embodiment, the first power device group for driving the U-phase winding of the motor, the second power device group for driving the V-phase winding of the motor, and the third power device group for driving the W-phase winding of the motor are respectively arranged in different discrete spaces separated by the baffle. The first power device group, the second power device group, and the third power device group are implemented by the packaging substrate 110 and the interconnection substrate 113 Figure 9 The controller is, for example, a microcontroller MCU, arranged on the interconnection substrate 113.

[0067] In another embodiment, for one or more of the first power device group, the second power device group, and the third power device group, the power devices included therein are located in at least two discrete spaces. Figure 10 A top view of another exemplary packaging structure of the power module is shown. Figure 11 A partial cross-sectional view of the packaging structure of the power module is shown. Figure 10 The A1A2 line in the figure shows the intercepting position of Figure 11 The A1A2 line in the figure shows the intercepting position of Figure 10 and 11 As shown in the figure, the switch tube C1 and the diode D1 are located in the first discrete space 11, the switch tube C2 and the diode D2 are located in the second discrete space 12, the switch tube C3 and the diode D3 are located in the third discrete space 13, the switch tube C4 and the diode D4 are located in the fourth discrete space 14, the switch tube C5 and the diode D5 are located in the fifth discrete space 15, and the switch tube C6 and the diode D6 are located in the sixth discrete space 16.

[0068] By further arranging the baffle for the power devices in the first power device group, the second power device group, and the third power device group, the surface flatness of the sealing layer can be further improved, and the thermal stress caused by heat generated during operation of the power devices can be reduced.

[0069] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A packaging structure of a power module, characterized by, The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure.

2. The package structure of claim 1, wherein, The application relates to a power device package structure.

3. The package structure of claim 1, wherein, The application relates to a power device package structure.

4. The package structure of claim 1, wherein, The application relates to a power device package structure.

5. The package structure of claim 1, wherein, The application relates to a power device package structure.

6. The package structure of claim 1, wherein, The application relates to a power device package structure.

7. The package structure of claim 1, wherein, The application relates to a power device package structure.

8. The package structure of claim 7, wherein, The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure.

9. The package structure of claim 8, wherein, The application relates to a power device package structure.

10. The package structure of claim 1, wherein, The application relates to a power device package structure. The application relates to a power device package structure.

11. A power module, characterized by The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure.

12. The power module of claim 11, wherein, The application relates to a power device package structure.

13. The power module of claim 11, wherein, The application relates to a power device package structure.

14. The power module of claim 11, wherein, The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. The application relates to a power device package structure. 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The application relates to a power device package 15. The power module of claim 11, wherein, The sealing layer is one or a combination of a silica gel layer, a moisture-proof coating, and a sulfurization-proof coating.

16. The power module of claim 11, wherein, The sealing layer includes a first potting layer and a second potting layer, the first potting layer is an epoxy resin layer, the first potting layer covers the power device, and the second potting layer covers the first potting layer, and the second potting layer is one or a combination of a silica gel layer, a moisture-proof coating, and a sulfurization-proof coating.

17. The power module of claim 11, wherein, The packaging substrate includes a substrate, a first metal layer on a first surface of the substrate, and a second metal layer on a second surface of the substrate.

18. The power module of claim 17, wherein, The discrete space is provided with a conductive structure, and the conductive structure includes a first conductive structure and a second conductive structure. The first conductive structure electrically connects the bonding point on the front surface of the power device and the first metal layer of the packaging substrate, The second conductive structure is arranged between the power device and the packaging substrate, and the second conductive structure electrically connects the back surface of the power device and the first metal layer of the packaging substrate.

19. The power module of claim 18, wherein, The sealing layer includes a first potting layer and a second potting layer, the first potting layer is an epoxy resin layer, the first conductive structure and the front surface of the power device are located in the first potting layer, the second potting layer covers the first potting layer, and the second potting layer is one or a combination of a silica gel layer, a moisture-proof coating, and a sulfurization-proof coating.

20. The power module of claim 11, wherein, The plurality of discrete spaces includes a first discrete space, a second discrete space, and a third discrete space, One or more of the power devices in the first discrete space are used to drive the U-phase coil of the motor, one or more of the power devices in the second discrete space are used to drive the V-phase coil of the motor, and one or more of the power devices in the third discrete space are used to drive the W-phase coil of the motor.

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