Optoelectronic device and optical transceiver

Abstract

The embodiment of the utility model provides a photoelectric device and an optical transceiver. The optoelectronic device includes a first die and a second die. The first die has a first backside. The second die is disposed over the first die. The second die has a second backside bonded to the first backside. The second die includes optical circuitry and electrical circuitry. The optical circuit system is configured to generate or process a first optical signal. The electrical circuitry is electrically coupled to the first die and configured to control operation of the light circuitry by a first electrical signal input to the first die or to provide a second electrical signal to the first die in response to the first light signal.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to optoelectronic devices and optical transceivers. BACKGROUND

[0002] Optoelectronic modules can be used to convert electrical signals to optical signals and vice versa. Currently, many different types of optoelectronic modules are manufactured. These modules have many applications, especially in data communication applications where electrical signals are carried by optical fibers.

[0003] Different types of optoelectronic modules can be used to perform different functions. Receive modules and transmit modules, for example, are used to perform part of the optoelectronic conversion. More specifically, receive modules convert optical signals to electrical signals as part of a receive function. Transmit modules convert electrical signals to optical signals as part of a transmit function. Transceiver modules can be used to perform the optoelectronic conversion for both receive and transmit processes. SUMMARY

[0004] Embodiments of the present application relate to an optoelectronic device comprising: a first die including a first backside and a first frontside opposite the first backside; and a second die disposed above the first die and including a second frontside and a second backside opposite the second frontside and bonded to the first backside, wherein the second die includes: optoelectronic circuitry configured to generate or process a first optical signal; and electrical circuitry electrically coupled to the first die configured to control operation of the optoelectronic circuitry by a first electrical signal input into the first die or generate a second electrical signal in response to the first optical signal and provide the second electrical signal to the first die.

[0005] Embodiments of the present application relate to an optical transceiver comprising: an optical transmitter comprising: a first electronic die including a first backside and a first frontside opposite the first backside; and a first optical die disposed above the first electronic die and including a second frontside and a second backside opposite the second frontside, wherein the first optical die includes: optoelectronic circuitry configured to generate or process a first optical signal; and electrical circuitry electrically coupled to the first electronic die, wherein the electrical circuitry is configured to control operation of the optoelectronic circuitry by a first electrical signal input into the first electronic die; an optical receiver; and an optical fiber configured to transmit the first optical signal to the optical receiver.

[0006] Embodiments of the present application relate to a method of operating an optoelectronic device, the optoelectronic device comprising a plurality of electronic dies and an optical die positioned above the plurality of electronic dies, the method comprising: receiving a start request; activating one of the plurality of electronic dies; determining whether the activated one of the plurality of electronic dies is unresponsive; and deactivating the activated one of the plurality of electronic dies or activating another one of the plurality of electronic dies based on the determination. BRIEF DESCRIPTION OF DRAWINGS

[0007] Aspects of the disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It is noted that the various elements depicted in the figures are not drawn to scale. In fact, the dimensions of the various elements can be arbitrarily expanded or reduced for the sake of clarity. It is noted that the various elements depicted in the figures are not drawn to scale. In fact, the dimensions of the various elements can be arbitrarily expanded or reduced for the sake of clarity.

[0008] Figure 1 is a schematic cross-sectional view of an optoelectronic device according to some embodiments of the present disclosure.

[0009] Figure 2 is a schematic view of an optical die attached to one or more optical fibers of other devices according to some embodiments of the present disclosure.

[0010] Figure 3 is Figure 1 is a schematic cross-sectional view of an electronic die and an optical die of the optoelectronic device illustrated in

[0011] Figure 4 is a circuit diagram of a transmission circuit according to some embodiments of the present disclosure.

[0012] Figure 5 is a circuit diagram of an optical transimpedance amplifier according to some embodiments of the present disclosure.

[0013] Figure 6 is Figure 3 is a zoomed-in view of area A of

[0014] Figure 7 is a schematic top view of a portion of an electronic die according to some embodiments of the present disclosure.

[0015] Figure 8 is a schematic perspective view of a portion of an optical die and an optical fiber.

[0016] Figure 9 is a schematic view of an optoelectronic circuit system of an optoelectronic device used as an optical transmitter according to some embodiments of the present disclosure.

[0017] Figure 10 is a schematic view of an optoelectronic circuit system of an optoelectronic device used as an optical transmitter according to some embodiments of the present disclosure.

[0018] Figure 11This is a schematic diagram of a two-dimensional grating coupler according to some embodiments of the present disclosure.

[0019] Figure 12 This is a schematic diagram of a separator network according to some embodiments of the present disclosure.

[0020] Figure 13 This is a schematic diagram of a one-dimensional grating coupler according to some embodiments of the present disclosure.

[0021] Figure 14 This is a schematic diagram of an optical circuit system of an optoelectronic device used as a light receiver according to some embodiments of the present disclosure.

[0022] Figure 15 Tie Figure 1 The diagram shows a schematic cross-sectional view of the electronic die and optical die of the optoelectronic device described in the text.

[0023] Figure 16 Tie Figure 1 The diagram shows a schematic cross-sectional view of the electronic die and optical die of the optoelectronic device described in the text.

[0024] Figure 17 This is a schematic diagram of an edge coupler according to some embodiments of the present disclosure.

[0025] Figure 18 This is a schematic diagram of an edge coupler according to some embodiments of the present disclosure.

[0026] Figure 19 This is a schematic diagram of an edge coupler according to some embodiments of the present disclosure.

[0027] Figure 20 This is a schematic perspective view of a portion of a photodiode according to some embodiments of the present disclosure.

[0028] Figure 21 This is a schematic side view of a portion of a photodiode according to some embodiments of the present disclosure.

[0029] Figure 22 This is a schematic top view of portions of an optical die and optical fiber according to some embodiments of the present disclosure.

[0030] Figure 23 This is a schematic diagram of an optical transceiver according to some embodiments of the present disclosure.

[0031] Figure 24 This is a schematic block diagram of a portion of an optical transceiver according to some embodiments of the present disclosure.

[0032] Figure 25 This is a schematic diagram of an optical transceiver according to some embodiments of the present disclosure.

[0033] Figure 26is a schematic block diagram of a portion of an optical transceiver according to some embodiments of the present disclosure.

[0034] Figure 27 is a flowchart of a method of operating an optoelectronic device according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0035] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to limit the application in any way. For example, the first member formed on or over the second member in the following description can include embodiments in which the first and second members are formed to be in direct contact, and can also include embodiments in which an additional member can be formed between the first and second members so that the first and second members can not be in direct contact. Further, the same elements and / or letters can be repeated in various examples in the present disclosure. Such repetition is for the purpose of simplicity and clarity and does not itself indicate a relationship between the various embodiments and / or configurations discussed.

[0036] Further, spatially relative terms, such as "beneath", "below", "lower", "above", "upper", and the like, can be used herein for ease of description to describe one element's or component's relationship to another element(s) or component(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. The devices can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0037] As used herein, the terms "first", "second", and "third" describe various elements, components, regions, layers, and / or sections, but do not limit the elements, components, regions, layers, and / or sections unless otherwise specified by context. The terms "first", "second", and "third" can be used only to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. The terms "first", "second", and "third" as used herein do not imply a sequence, order or importance of one element, component, region, layer or section over another unless clearly indicated by context.

[0038] Although the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Also, as used herein, the terms "substantially", "about" or "approximately" mean within values or ranges that can be considered acceptable by one of ordinary skill in the art (e.g., within 10%, 5%, 1% or 0.5% of a given value or range). Alternatively, the terms "substantially", "about" or "approximately" mean within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Those skilled in the art will understand that the

[0039] Figure 1 is a schematic cross-sectional view of an optoelectronic device according to some embodiments of the disclosure. Referring to Figure 1 The optoelectronic device 10 includes a plurality of electronic dies 110A, 110B, and 110C and an optical die 130. The electronic dies 110A, 110B, and 110C can be laterally separated from one another, and the optical die 130 is stacked above the electronic dies 110. The electronic dies 110A, 110B, and 110C can include different functional circuitry. For example, the electronic die 110A includes processing logic circuitry, the electronic die 110B includes a high-speed filter, and the electronic die 110C includes communication driver circuitry, such as a transmit driver circuit, a receive driver circuit, or transceiver circuitry including integrated transmit and receive driver circuitry.

[0040] The electronic dies 110A can be configured to act in concert with one another to control operation of the optoelectronic device 10. In some embodiments, the high-speed filter is adapted to minimize noise injection. The high-speed filter can be implemented by, for example, an RC filter. The RC filter can include a trench resistor to minimize the footprint of the electronic die 110B.

[0041] In some embodiments, the communication drive circuitry is configured to drive the transmission or reception circuitry in the optical die 130. In some scenarios, the electronic dies 110A-C have a relatively short service life compared to the service life of the optical die 130, and the communication drive circuitry is used more frequently than the processing logic circuitry and the high-speed filter, such that the service life of the communication drive circuitry is fulfilled earlier. This short service life of the communication drive circuitry can pose a challenge to the service life and reliability of the overall device. Thus, the optoelectronic device 10 can include multiple electronic dies 110C containing the same or similar communication drive circuitry in order to extend the overall service life of the optoelectronic device 10.

[0042] In some embodiments, the processing logic circuitry is configured to activate one of the electronic dies 110C at a certain point in time and de-activate the other electronic dies 110C. The processing logic circuitry can perform monitoring operations on the activated electronic die 110C to monitor the status of the activated electronic die 110C. For example, the processing logic circuitry is configured to assess the status of the activated electronic die 110C and determine whether the activated electronic die 110C has a normal operating status or is unresponsive. An unresponsive status indicates that the activated electronic die 110C is no longer functional. The electronic die 110C that is no longer functional is considered a failed die. The de-activated electronic dies 110C are used as spare electronic dies 110C that can be used to replace the failed die during normal operation. In response to the unresponsive status, the processing logic circuitry can de-activate the activated electronic die 110C and activate one of the spare electronic dies 110C. In some embodiments, the processing logic circuitry can include a memory for storing information related to the electronic dies 110C. Whether the electronic die 110C to be activated is a failed die can be included in the information. The processing logic circuitry controls the operation of the electronic dies 110C according to the information stored in the memory.

[0043] Still referring to Figure 1, the electronic dies 110A-C can have substantially the same thickness. Further, the electronic dies 110A-C have a relatively small footprint compared to the footprint of the optical die 130. To improve uniformity and planarization in the underlying layers of the optoelectronic device 10 (i.e., the layers below the electronic dies 110A-C), the optoelectronic device 10 can further include one or more dummy dies 100. In some embodiments, the thickness of the dummy dies 100 is designed to equal the thickness of the electronic dies 110A-C. The dummy dies 100 do not perform any electrical or optical functions in the operation of the optoelectronic device 10 and are not supplied with electrical power. The dummy dies 100 can be substantially free of any active devices, functional circuitry, or the like. For example, the dummy dies 100 can include a substrate 102 (e.g., a bulk silicon substrate) and a bond layer 104 disposed in a surface of the substrate 102. The bond layer 104 can be used to bond the dummy dies 100 to the optical die 130 using a fusion bonding process, for example.

[0044] In some embodiments, as shown in Figure 2 one or more optical fibers 200 are attached to the optical die 130, thus enabling the optoelectronic device 10 to have optical communication with other devices EX. Due to the long distance of signal propagation through the optical fibers 200, the optical signal is interrupted, indicating the simultaneous presence of both transverse electric (TE) mode and transverse magnetic (TM) mode optical signals, where the TE mode and TM mode optical signals are linearly polarized signals that are orthogonal to each other. More particularly, a polarized optical signal in the TE or TM mode can change to a combined TE and TM mode during propagation in the optical fibers 200. The optical signal in the combined TE and TM mode from the optical fibers 200 can be transformed back to the TE or TM mode in the optical die 130. Thus, the optical fibers 200 can be polarization maintaining optical fibers (PMF) capable of maintaining the TE to TM ratio during propagation. The polarization maintaining optical fibers can ensure low intensity loss (i.e., about 3 dB of intensity loss) during the conversion of the combined TE and TM mode to the TE or TM mode, thus providing reliable mode transition in the optical fibers 200.

[0045] The optoelectronic device 10 can be an optical transmitter or an optical receiver, and thus can transmit optical signals to or receive optical signals from the optical fibers 200. The optoelectronic device 10 can be mounted to a circuit board 202 using connectors 204 (e.g., solder balls, controlled collapse chip connection (C4) bumps, or micro-C4 bumps) or other suitable configurations (e.g., copper pillars).

[0046] Figure 3 is Figure 1 a schematic cross-sectional view of one of the electronic dies 110C and the optical die 130 of the optoelectronic device 10 as described in Figure 3The electronic die 110C provides conductive paths for routing electrical signals to and / or from the optical die 130. The electronic die 110C can also exchange electrical signals with the optical die 130.

[0047] In some embodiments where the optoelectronic device 10 functions as an optical transmitter, electrical signals are provided by circuitry external to the electronic die 110C. For example, the electrical signals are provided by the electronic die 110A. The electronic die 110C is used to receive the electrical signals from the external circuitry and interact with the optical die 130, where the electrical signals can be used to generate and / or process optical signals. In some embodiments where the optoelectronic device 10 functions as an optical receiver, electrical signals are provided by the optical die 130. The electronic die 110C is used to receive the electrical signals from the optical die 130 and interact with the external circuitry, where the electrical signals can represent the intensity of the optical signals within the optical die 130.

[0048] The electronic die 110C has a front side 112 and a back side 114 opposite the front side 112. The electronic die 110C receives electrical signals from or transmits electrical signals to external circuitry via the front side 112 of the electronic die 110C.

[0049] The optical die 130 can transmit, receive, convert, modulate, demodulate, or otherwise process optical signals. In some embodiments where the optoelectronic device 10 functions as an optical transmitter, the optical die 130 is configured to convert electrical signals from the electronic die 110C into optical signals, process optical signals in response to electrical signals from the electronic die 110C, or both. The optical die 130 can further be configured to transmit optical signals from the optical die 130 and can be in electrical communication with the electronic die 110C. In some embodiments where the optoelectronic device 10 functions as an optical receiver, the optical die 130 converts optical signals into electrical signals. The intensity / power of a received optical signal can be measured by the optical receiver. The electrical signals representing this measured intensity / power value are then transmitted to the electronic die 110C.

[0050] The optical die 130 has a front side 132 and a back side 134 opposite the front side 132. Optical signals can enter and / or exit the optoelectronic device 10 through the front side 132 of the optical die 130. The optical die 130 is bonded to the electronic die 110C by, for example, hybrid bonding, and the back side 134 of the optical die 130 is mounted on the back side 114 of the electronic die 110C, thereby forming a back-to-back arrangement.

[0051] The electronic die 110C can include a semiconductor substrate 116, a passivation layer 118, conductive pillars 120, and interconnect structures 122. The front side 112 of the electronic die 110C can refer to the side that includes the conductive pillars 120 for transmitting electrical signals to or receiving electrical signals from external circuitry.

[0052] A passivation layer 118 is disposed on a first surface 1162 of the semiconductor substrate 116. The passivation layer 118 can include a dielectric material, such as an oxide or a polymer (e.g., polyimide). The conductive pillars 120 can be part of a transmission path for electrical signals. In addition, the conductive pillars 120 serve as input / output ports for the electronic die 110C. The conductive pillars 120 extend through the passivation layer 118 and into the semiconductor substrate 116. In some embodiments, the conductive pillars 120 penetrate the semiconductor substrate 116 and the passivation layer 118. In some embodiments, the conductive pillars 120 are formed of a conductive material including copper, aluminum, tungsten, combinations thereof, or the like.

[0053] The interconnect structure 122 is adapted to connect the electronic die 110C to the optical die 130. The interconnect structure 122 includes a dielectric stack 1222 and a plurality of first conductive members 1224 disposed in the dielectric stack 1222. In some embodiments, the dielectric stack 1222 is disposed on a second surface 1164 of the semiconductor substrate 116 and includes a plurality of dielectric films formed of one or more dielectric materials. The dielectric films can include a low-k dielectric material. The first conductive members 1224 can be lines and vias, and can be formed by a damascene process (e.g., a dual damascene process, a single damascene process, or the like). The material of the first conductive members 1224 can be the same as or different from the material of the conductive pillars 120.

[0054] One or more electronic components 124 can be formed in and / or on the semiconductor substrate 116. In some embodiments, the electronic components 124 include passive and / or active components configured to operate with one another to provide a desired functionality. For example, the passive components can include resistors, capacitors, inductors, or combinations thereof, and the active components can include transistors, diodes, or the like. The passivation layer 118 can cover the electronic components 124 exposed by or disposed on the semiconductor substrate 116. The conductive pillars 120 can be laterally separated from the electronic components 124 and electrically connected to the electronic components 124 by the interconnect structure 122.

[0055] The interconnect structure 122 is electrically connected to the electronic components 124 to form functional circuitry within the electronic die 110C. The functional circuitry controls high frequency communication of the optical die 130. In embodiments where the optoelectronic device 10 is used as an optical transmitter, the functional circuitry includes a transmission circuit. Figure 4 is a circuit diagram of a transmission circuit according to some embodiments of the present disclosure. Reference is made to Figure 4The transmission circuit 210 receives an input (voltage) signal Sin and then generates an output (voltage) signal Sout. The transmission circuit 210 can be adapted to high frequencies and configured to drive one or more optical components (e.g., a micro-ring modulator) in the optical die 130. The transmission circuit 210 includes a pair of buffers B1 and B2 and a pair of inductors L1 and L2. The buffers B1 and B2 are connected in series. More specifically, an output terminal of the buffer B1 is connected to an input terminal of the buffer B2. An input terminal of the buffer B1 receives the input (voltage) signal Sin, and an output terminal of the buffer B2 provides the output (voltage) signal Sout. The inductors L1 and L2 are coupled to the buffers B1 and B2, respectively, between a power supply voltage level VDD and a reference level VSS.

[0056] In embodiments where the optoelectronic device 10 functions as a light receiver, the functional circuit can include a receiving circuit. In some embodiments, the receiving circuit includes a photoresistor amplifier (TIA). A photoresistor amplifier is, for example, a current-to-voltage converter. Figure 5 is a circuit diagram of a photoresistor amplifier according to some embodiments of the present disclosure. Reference is made to Figure 5 The photoresistor amplifier 220 receives an input current signal Iin and generates an output voltage signal Vout. The photoresistor amplifier 220 can be adapted to high frequencies and can include an operational amplifier AMP, an inductor L, and a resistor R. A non-inverting input terminal of the operational amplifier AMP is grounded. The inductor L and the resistor R are coupled between an inverting input terminal and an output terminal of the operational amplifier AMP. More specifically, a first end of the inductor L is connected to the inverting input terminal of the operational amplifier AMP, a second end of the inductor L is connected to a first end of the resistor R, and a second end of the resistor R is connected to the output terminal of the operational amplifier AMP.

[0057] Referring back to Figure 3 The optical die 130 can include a semiconductor layer 136, an optical circuitry 138, an insulating layer 140, and an electrical circuitry 142. A front side 132 of the optical die 130 can refer to the side that includes the optical circuitry 138. The semiconductor layer 136 can include an elemental semiconductor, such as silicon (Si) or germanium (Ge) in a crystalline structure; a compound semiconductor, such as silicon germanium (SiGe), silicon carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), indium arsenide (InAs), or indium antimonide (InSb); or a combination thereof.

[0058] Optical circuitry 138 is disposed in semiconductor layer 136. Optical circuitry 138 can include input / output optical couplers (e.g., grating couplers) 1382 configured to interface with optical fibers 200, waveguides 1384, and a plurality of optical components 1386 that can perform one or more functions related to receiving optical signals from waveguides 1384. Some input / output optical couplers 1382 are used to transfer optical signals between waveguides 1384 and optical fibers 200. Due to the very large difference in size between waveguides 1384 and optical fibers 200, direct coupling would incur a large optical loss. In some embodiments, some input / output optical couplers 1382 are disposed above semiconductor layer 136 and are used to transfer optical signals between waveguides 1384.

[0059] Optical components can function in response to electronic signals from electronic die 110C. Optical components can include a radiation generator (e.g., a laser or a light emitting diode), a splitter, a modulator, a processor, an amplifier, a multiplexer, an optical sensing / detecting component (e.g., a photodiode), or the like.

[0060] Insulating layer 140 can surround and cover optical circuitry 138. Insulating layer 140 can be made of glass or a transmissive medium (e.g., an optical polymer), a dielectric material including silicon dioxide, an ultra-low dielectric constant dielectric material, a low dielectric constant dielectric material (e.g., SiCO), or the like. Insulating layer 140 can have a refractive index that is less than the refractive index of semiconductor layer 136, resulting in confinement of light in optical circuitry 138. At least some input / output optical couplers and waveguides can be disposed in insulating layer 140; input / output optical couplers and waveguides are vertically stacked on top of each other and laterally overlap with adjacent input / output optical couplers or waveguides.

[0061] Electrical circuitry 142 can include a dielectric stack 1422 and a second interconnect structure (e.g., a plurality of second conductive members 1424). Dielectric stack 1422 is disposed on backside 1364 of semiconductor layer 136, and second conductive members 1424 are surrounded by dielectric stack 1422. Dielectric stack 1422 can be substantially similar to and formed in the same manner as dielectric stack 1222 of electronic die 110C. Second conductive members 1424 can be any type of conductive structure and can include, for example, conductive lines, conductive vias, and conductive contacts. Conductive vias can connect adjacent conductive lines along the Z-direction.

[0062] In some embodiments, the topmost conductive member 1224T of the electronic die 110C and the bottommost conductive member 1222B of the optical die 130 serve as bonding pads for the electronic die 110C and the optical die 130, respectively. Additionally, the topmost dielectric film 1222T of the dielectric stack 1222 of the electronic die 110C and the bottommost dielectric film 1422B of the dielectric stack 1422 of the optical die 130 serve as a bonding agent for mixed bonding. The electronic die 110C and the optical die 130 are bonded back-to-back using the topmost conductive member 1224T, the topmost dielectric film 1222T, the bottommost conductive member 1222B, and the bottommost dielectric film 1422B. More specifically, the electronic die 110C and the optical die 130 are bonded by co-bonding the topmost conductive member 1224T to the bottommost conductive member 1222B and co-bonding the topmost dielectric film 1222T to the bottommost dielectric film 1422B.

[0063] After hybrid bonding, the topmost conductive member 1224T of the electronic die 110C can directly contact and be electrically connected to the bottommost conductive member 1222B of the optical die 130. From a top view, the optical member 1386 can overlap with one or more electronic components 124. From a top view, the optical member 1386 can further overlap with the first conductive member 1224 and the second conductive member 1424. Figure 3 As shown, the optical component 1386, electronic component 124, and first conductive component 1224 and second conductive component 1424 are designed to be arranged along a line La extending in the Z direction.

[0064] The back-to-back arrangement, the configuration that allows input and / or output of electrical signals through the front side 112 of the electronic die 110C, and the configuration that allows input and / or output of optical signals through the front side 132 of the optical die 130, also allows for a reduction in the transmission distance of electrical signals between the optical component and the I / O port of the electronic die 110, thereby avoiding or mitigating signal integrity loss at high transmission speeds.

[0065] Still referencing Figure 3 The optical die 130 may further include one or more coupler recesses 150 disposed above the input / output optical coupler 1382. The coupler recesses 150 are formed in the insulating layer 140 and adapted to guide optical signals from the optical fiber 200 into the optical die 130. Specifically, the coupler recesses 150 extend downward from the upper surface 1401 of the insulating layer 140 into the interior of the insulating layer 140. Figure 6 yes Figure 3 An enlarged view of region A, and Figure 7 This is a schematic top view of a portion of a photodiode 130 according to some embodiments of the present disclosure. Reference Figure 6 and Figure 7The coupler groove 150 can have a rectangular shape from a top view perspective and a trapezoidal shape from a cross-sectional view perspective. In addition, the width W of the coupler groove 150 decreases as the distance from the input / output optical coupler 1382 decreases, such that the coupler groove 150 has an inclination angle a with respect to the Z direction. The inclination angle a can be in the range of 5 to 15 degrees. In one exemplary embodiment, the inclination angle a is about 8 degrees.

[0066] In some embodiments, the optical die 130 can further include a plurality of alignment marks 160 for aligning the position of the optical fiber 200. The alignment marks 160 are adapted to ensure that the optical fiber 200 is disposed at a desired position and the optical fiber 200 is not displaced or rotated from its intended position and orientation. The alignment marks 160 are placed on or in the insulating layer 140 and exposed by the coupler groove 150. In one example, the alignment marks 160 are trenches or protrusions with a desired pattern formed in the insulating layer 140. The trenches can extend downward from the top surface of the insulating layer 140 into the interior of the insulating layer 140. In another example, the alignment marks 160 are formed by depositing a dielectric film with a desired pattern on the insulating layer 140. In yet another example, the alignment marks 160 are formed by depositing a dielectric material in a plurality of trenches formed in the insulating layer 140. The dielectric film and the dielectric material used to form the alignment marks 160 can have a color different from that of the insulating layer 140 and the semiconductor layer 136, thus facilitating the recognition of the alignment marks 160 during the attachment of the optical fiber 200 to the optical die 130.

[0067] The alignment marks 160 are arranged around the input / output optical coupler 1382. In some embodiments, the optical die 130 includes four alignment marks, with each alignment mark placed proximate to a respective corner of the coupler groove 150 in the insulating layer 140. In some embodiments, the alignment marks 160 can be L-shaped alignment marks. Alternatively, the alignment marks 160 can be cross-shaped, T-shaped, or any suitable shape.

[0068] Figure 8 is a schematic perspective view of portions of the optical die 130 and the optical fiber 200. Reference is made to Figure 8 In some embodiments, the optical fiber 200 is positioned by the base 230 at one or more predetermined intervals along the Y direction. The base 230 can have a rectangular shape. The base 230 is made of, for example, a thermoplastic resin. Other materials, such as glass, ceramic materials, metals, etc., can also be utilized. The base 230 can include a plurality of guide holes 232 for receiving the optical fiber 200. In some embodiments, the size of the guide holes 232 is specified by the size of the optical fiber 200. The base 230 is angularly positioned within the coupler groove 150 and aligned in the region bounded by the alignment marks 160. When the optical fiber 200 is disposed within the guide hole 232, the center of the optical fiber 200 is optically aligned with the input / output optical coupler 1382 (as shown in Figure 7The coupler groove 150 has a tilt angle a such that the pedestal 230 placed in the coupler groove 150 can be properly oriented with respect to the Z direction. By limiting the angle of the optical fiber 200 to about the tilt angle a, the efficiency of the coupler groove 150 can be improved. In some embodiments, the sidewalls of the pedestal 230 are offset from the surface of the insulating layer 140 exposed by the coupler groove 150. Alternatively, the sidewalls of the pedestal 230 can be attached to the surface of the insulating layer 140 exposed by the coupler groove 150.

[0069] Figure 9 and Figure 10 is a schematic diagram of the optoelectronic circuitry of the optoelectronic device 10, where the optoelectronic circuitry functions as an optical transmitter according to some embodiments of the disclosure. Figure 9 The optoelectronic circuitry 138A in Figure 10 The optoelectronic circuitry 138B in Figure 9 , the optoelectronic circuitry 138A includes a first I / O coupler (I / O_1), a splitter 1392, a plurality of modulators 1394, and a plurality of second I / O couplers (I / O_2) 1396. Figure 10 The optoelectronic circuitry 138B in Figure 9 is similar to the optoelectronic circuitry 138A in . Thus, the same element symbols are used to refer to the same or similar elements. The difference between the optoelectronic circuitry 138A and 138B is that the first I / O coupler (I / O_1) of the optoelectronic circuitry 138A is replaced by a radiation generator 1398 in the optoelectronic circuitry 138B. The radiation generator 1398 is configured to generate an optical signal to be processed and transmitted to the optical fiber 200_2.

[0070] Referring back to Figure 9 , the first input / output optical coupler 1390 is used to direct the input optical signal from the optical fiber 200_1 to the splitter 1392. The input optical signal is typically in an unknown and arbitrary polarization state, such that the first input / output optical coupler 1390 can be a two-dimensional grating coupler to provide the polarized optical signal in TE and TM modes from the optical fiber 200_1 to the respective splitters 1392.

[0071] Figure 11 is a schematic diagram of a two-dimensional grating coupler according to some embodiments of the disclosure. Referring to Figure 11The two-dimensional grating coupler 1400 can include a first wedge structure 1402, a second wedge structure 1404, and a grating structure 1406. The grating structure 1406 can be formed at the intersection of a pair of orthogonal integrated wedge structures (e.g., the first wedge structure 1402 and the second wedge structure 1404). The grating structure 1406 includes an array of holes 1408 (or alternatively, an array of posts (not shown)). The grating structure 1406 can be used to separate TE mode optical signals from TM mode optical signals. The grating structure 1406 can be further configured to transmit TE mode optical signals to the first wedge structure 1402. In addition, the grating structure 1406 can transmit TM mode optical signals to the second wedge structure 1404. Then, at least one of the TE mode and TM mode optical signals are transmitted to Figure 9 the splitter 1392 shown in FIG. 14B. Figure 9 Only one splitter is shown for handling either of the TE mode or TM mode optical signals (where one of the TE mode and TM mode optical signals is not used, or is terminated), but it should be understood that in some embodiments, the opto-circuitry for handling both the TE mode and TM mode optical signals can include two splitters.

[0072] The splitter 1392 includes an input port and a plurality of output ports. The input port is optically coupled to the first input / output optical coupler 1390 to receive the TM mode or TE mode optical signal, and the output ports are optically coupled to the modulators 1394. The splitter 1392 is configured to split the input optical signal received at the input port and provide the split signals to the output ports. For example, Figure 9 The splitter 1392 shown in FIG. 14B splits the input optical signal into two output optical signals. In some embodiments, the splitter 1392 is used to equally divide the input optical signal into the output optical signals with minimal insertion loss. The output optical signals can have the same spectral characteristics, but each have about half the signal power of the input optical signal. The splitter 1392 can be a Y-junction splitter, a directional coupler (DC) splitter, a Mach Zehnder interferometer (MZI), or other suitable splitter.

[0073] The input optical signal can be split into more than two (e.g., 4, 8, 16, 32, etc.) output optical signals by the cascaded stages to form a splitter network. Figure 12 is a schematic diagram of a splitter network 1440 according to some embodiments of the present disclosure. Reference is made to Figure 12The splitter network 1440 can have a splitting ratio of 1 :M; that is, the splitter network 1440 has one input port IN and M output ports OUT_1 to OUT_M, where M is an integer greater than 1. In some embodiments, the splitter network 1440 is implemented by cascading multiple splitters 1442 having a splitter ratio of 1 :2. The splitter network 1440 can be implemented using a number of output ports following a binary form 2n, where n is an integer equal to or greater than 1. A non-binary number of ports can be implemented by using the next larger binary dimension and terminating the unused ports. The present disclosure also contemplates the use of non-binary forms. For example, a splitter network having a splitting ratio of 1 :6 can be implemented by cascading a splitter having a splitter ratio of 1 :2 with two splitters each having a splitter ratio of 1 :3.

[0074] Referring back to Figure 9 The modulator 1394 is configured to manipulate a property of the optical signal. In some embodiments, the modulator 1394 modulates the intensity and / or phase of the optical signal from the splitter 1392 based on an electrical signal. The modulator 1394 is, for example, a micro-ring modulator (MRM) or a Mach-Zehnder modulator (MZM).

[0075] The second I / O coupler 1396 is configured to transmit the optical signal between the modulator 1394 and the optical fiber 200_2. The second I / O coupler 1396 can be a one-dimensional grating coupler. Figure 13 is a schematic diagram of a one-dimensional grating coupler according to some embodiments of the present disclosure. Referring to Figure 13 The one-dimensional grating coupler 1500 includes a grating structure 1502 and an integrated waveguide 1504. The grating structure 1502, which includes a pattern, is used to scatter the optical signal received from the waveguide 1504. The pattern is determined based on the shape, geometry, and material of the coupling grating of the grating structure 1502 and based on the desired operating wavelength range of the optical signal.

[0076] Figure 14 is a schematic diagram of an opto-circuitry of an optoelectronic device 10 used as an optical receiver according to some embodiments of the present disclosure. Referring to Figure 14 The opto-circuitry 138C includes a plurality of input couplers 1600 and a plurality of photodetectors 1602. The input couplers 1600 receive the optical signal from the optical fiber 200_3 and direct the optical signal to respective photodetectors 1602. The input couplers 1600 can be Figure 11 the two-dimensional grating coupler 1400 shown in In some embodiments, the photodetectors 1602 are configured to determine the intensity and / or phase of the received optical signal.

[0077] Figure 15 is Figure 1The schematic cross-sectional view of the electronic die 110C and optical die 130A of the optoelectronic device 10 described herein. Figure 15 The optical bare wafer 130A and Figure 3 Similar to the 130 optical wafer in the image, except that... Figure 15 In the optical die 130A, the optical signal enters and / or exits the optoelectronic device 10 through the back side 134 of the optical die 130A. For example... Figure 15 As shown, the input / output optical coupler 1382 is therefore placed near the back side 134 of the optical die 130A. Figure 15 The electrical circuit system 142 of the optical die 130A and the electronic die 110C shown in the image are respectively connected to... Figure 3 The electrical circuit system 142 of the optical die 130 shown is the same as that of the electronic die 110C, and detailed descriptions are omitted for the sake of brevity.

[0078] Figure 16 yes Figure 1 A schematic cross-sectional view of the electronic die 110C and optical die 130B of the optoelectronic device 10 described herein. Figure 16 The 130B optical wafer in the middle is related to many aspects. Figure 3 The optical wafer 130 is similar to that in the text, and therefore, for the sake of brevity, descriptions of similar features will not be repeated. Figure 16 The 130B bare die in the middle and Figure 3 The difference between the optical wafer 130 and the one in the middle is that, Figure 16 In the optical die 130B, the optical signal enters and / or leaves the optoelectronic device 10 through the sidewall 135 of the optical die 130B, and the input / output optical coupler 1382 therefore includes an edge coupler. Figure 16 The electronic die 110C shown in the video and Figure 3 The electronic die 110C shown is essentially the same, and detailed descriptions are omitted for brevity.

[0079] Figure 17 This is a schematic diagram of an input / output optocoupler 1700 according to some embodiments of the present disclosure. Reference Figure 17The input / output optical coupler 1700 includes an edge coupler 1702 and a polarizing beam splitter (PBS) 1704. The edge coupler 1702 is used to transfer optical signals between the optical die 130 and the optical fiber 200. The polarizing beam splitter 1704 is operable to separate the received optical signals into polarized optical signals in TE and TM modes. In some embodiments, the edge coupler 1702 has a wedge shape with a gradually increasing width, where the incoming optical signals propagate through the edge coupler 1702 to the polarizing beam splitter 1704. The polarizing beam splitter 1704 includes an input portion 1710 connected to the edge coupler 1702, a first output portion 1720, a second output portion 1730, and a TE-TM mode separation portion 1740 connecting the input portion 1710 to the first and second output portions 1720 and 1730.

[0080] The TE-TM mode separation portion 1740 is used to separate the optical signals polarized in the TE mode from the received optical signals and provide the optical signals polarized in the TE mode to the first output portion 1720. In addition, the TE-TM mode separation portion 1740 is further used to separate the optical signals polarized in the TM mode from the received optical signals and provide the optical signals polarized in the TM mode to the second output portion 1730.

[0081] Figure 18 is a schematic diagram of an input / output optical coupler 1700A in accordance with some embodiments of the disclosure. Figure 18 The input / output optical coupler 1700A in is similar to the input / output optical coupler 1700 in Figure 17 The input / output optical coupler 1700A in is similar to the input / output optical coupler 1700 in

[0082] Figure 19 is a schematic diagram of an input / output optical coupler 1700B in accordance with some embodiments of the disclosure. Figure 19 The input / output optical coupler 1700B in is similar to the input / output optical coupler 1700 in Figure 17The input / output optical coupler 1700B is similar to the input / output optical coupler 1700 in FIG. 17A, except that the input / output optical coupler 1700B further includes a waveguide 1910 and a polarization rotator 1920. The waveguide 1910 is interposed between the edge coupler 1702 and the polarization beam splitter 1704. The polarization rotator 1920 is optically coupled to the waveguide 1910. The polarization rotator 1920 is configured to rotate an incoming optical signal that is polarized in a TM mode into an optical signal that is polarized in a first-order TE mode (TE1). Thus, the input / output optical coupler 1700B outputs two branches of optical signals, where one of the branches propagates optical signals that are polarized in a TE mode, and another of the branches propagates optical signals that are polarized in a TE1 mode.

[0083] Figure 20 is a schematic perspective view of a portion of the optical die 130, and Figure 21 is a schematic side view of a portion of the optical die 130 according to some embodiments of the present disclosure. Referring to Figure 16 , Figure 20 and Figure 21 , the optical die 130 can further include one or more coupler trenches 152 placed at edges of the insulating layer 140 and a plurality of alignment marks 162 placed on sidewalls of the insulating layer 140 exposed by the coupler trenches 152.

[0084] Figure 22 is a schematic top view of a portion of the optical die 130 and the optical fibers 200 according to some embodiments of the present disclosure. Referring to Figure 22 , the optical fibers 200 are positioned at predetermined intervals along the Y direction, for example, by the base 230. The base 230 includes a plurality of guide holes 232 for receiving the optical fibers 200. The base 230 is positioned within the coupler trenches 152 and aligned in the regions bounded by the alignment marks 162. In some embodiments, sidewalls of the base 230 are offset from the top surface 1362 of the semiconductor layer 136 exposed by the coupler trenches 152. Alternatively, the thickness of the base 230 is designed such that the sidewalls of the base 230 are attached to the top surface 1362 of the semiconductor layer 136 exposed by the coupler trenches 152 when the base 230 is assembled to the optical die 130.

[0085] Figure 23 is a schematic view of the optical transceiver 30 according to some embodiments of the present disclosure, and Figure 24 is a schematic block diagram of a portion of the optical transceiver 30 according to some embodiments of the present disclosure. Referring to Figure 23 and Figure 24 , the optical transceiver 30 includes an optical transmitter 310, an optical receiver 350, and a plurality of optical fibers 370. The optical transmitter 310 communicates to the optical receiver 350 using some of the optical fibers 370. The optical transmitter 310 can have a similar configuration as the optical transmitter 310 in FIG. 18A. Figure 3The optical module 100 shown in the image has a configuration that is essentially the same. The optical receiver 350 has the same configuration as... Figure 3 The optical module 100 shown in the image has a similar configuration, except that the optical receiver 350 contains only one input / output optical coupler.

[0086] The optical transmitter 310 includes a first electronic die 312 and a first optical die 320 disposed above the first electronic die 312. The first electronic die 312 has a front side 3122 and a back side 3124 opposite to the front side 3122. The first electronic die 312 includes a conductive pillar 314, an interconnect structure 316, and at least one electronic component 318. The conductive pillar 314 is disposed at the front side 3122. The interconnect structure 316 connects the electronic component 318 to the conductive pillar 314.

[0087] The optical die 320 has a front side 3202 and a back side 3204 opposite to the front side 3202. The back side 3204 of the optical die 320 is attached to the back side 3124 of the electronic die 310 to form a back-to-back arrangement. The first optical die 320 may include an electrical circuit system 322 and an optical circuit system 324. The electrical circuit system 322 is used to conduct electrical signals for driving the first optical die 320 from the first electronic die 312 to the optical circuit system 324. The optical circuit system 324 is configured to process the incoming optical signals.

[0088] like Figure 24 As shown, the optical circuit system 324 may include multiple transmission modules 330. Each transmission module 330 may include a first I / O coupler (I / O_1) 332, a splitter 334, multiple modulators 336, and multiple second I / O couplers (I / O_2) 338. The first I / O coupler 332 is used to receive input optical signals. The splitter 334 includes an input port and multiple output ports. The input port of the splitter 334 is coupled to one of the first I / O couplers 332, and each output port of the splitter 334 is coupled to one of the modulators 336. The second I / O couplers 338 are coupled to the modulators 336 respectively. In some embodiments, the splitter 334 may have a splitter ratio of 1:8, such that each splitter 334 includes an input port and eight output ports. Therefore, each transmission module 330 may include eight modulators 336 and eight second I / O couplers 338 to support eight channels of data streaming. Figure 24 As shown, the optical circuit system 324, which includes four transmission modules 330, can provide 32 channels for data streaming.

[0089] Return to reference Figure 23The optical receiver 350 includes a second electronic die 352 and a second optical die 360 disposed above the second electronic die 352. The second electronic die 352 has a front side 3522 and a back side 3524 opposite the front side 3522. The second electronic die 352 includes electrically conductive pillars 354, interconnect structures 356, and at least one electronic component 358. The interconnect structures 356 connect the electronic component 358 to the electrically conductive pillars 354.

[0090] The optical die 360 has a front side 3602 and a back side 3604 opposite the front side 3602. The back side 3604 of the optical die 360 is attached to the back side 3524 of the electronic die 350 to form a back-to-back arrangement. The second optical die 360 can include electrical circuitry 362 and opto-circuitry 364. The electrical circuitry 362 is electrically connected to the interconnect structures 356, and the opto-circuitry 364 is configured to receive incoming optical signals.

[0091] As shown in Figure 24 The opto-circuitry 364 can include a plurality of receive modules 370. Each receive module 370 can include an I / O coupler (2DGC) 372 and a plurality of photodetectors (PDs) 374. The I / O coupler 372 is, for example, a two-dimensional grating coupler for separating TE and TM polarized optical signals from received optical signals. Thus, each I / O coupler 372 can be coupled to two photodetectors 374 for detecting TE and TM polarized optical signals, respectively. In some embodiments, the TE and TM polarized optical signals from each receive module 370 are added to each other at a summer circuit 380 before the second electronic die 352 shown in Figure 23 The second electronic die 352 shown in

[0092] Figure 25 is a schematic block diagram of an optical transceiver 40 according to some embodiments of the present disclosure, and Figure 26 is a schematic block diagram of a portion of an optical transceiver 40 according to some embodiments of the present disclosure. Reference is made to Figure 25 and Figure 26 The optical transceiver 40 includes an optical transmitter 410, an optical receiver 450, and a plurality of optical fibers 470. The optical fibers 470 connect the optical transmitter 410 to the optical receiver 450. The optical transmitter 410 can have substantially the same configuration as the optical module 100B shown in Figure 16 The optical receiver 450 has a configuration similar to that of the optical module 100B shown in Figure 16 The optical receiver 450 has a configuration similar to that of the optical module 100B shown in

[0093] More specifically, the optical transmitter 410 includes a first electronic die 412 and a first optical die 420 placed above the first electronic die 412. The first electronic die 412 has a front side 4122 and a back side 4124 opposite the front side 4122. The first electronic die 412 includes a conductive pillar 414, a first interconnect structure 416, and at least one electronic component 418. The first interconnect structure 416 connects the electronic component 418 to the conductive pillar 414.

[0094] The optical die 420 has a front side 4202 and a back side 4204 opposite the front side 4202. The back side 4204 of the optical die 420 is bonded to the back side 4124 of the electronic die 410 to form a back-to-back arrangement. The first optical die 420 can include electrical circuitry 422 and optical circuitry 424. The optical circuitry 424 is configured to receive incoming optical signals. The electrical circuitry 422 is used to conduct electrical signals from the first electronic die 412 to the optical circuitry 424.

[0095] As shown in Figure 26 The optical circuitry 424 can include a plurality of first I / O couplers (I / O_1) 432, a multiplexer (MUX) 434, a splitter 436, a plurality of modulation units 438, and a plurality of second I / O couplers (I / O_2) 440. The first I / O couplers 432 are used to receive input optical signals having different wavelengths λ1 to λ4. The multiplexer 434 includes a plurality of input ports and an output port; the input ports of the multiplexer 434 are respectively coupled to the first I / O couplers 432, and the output port of the multiplexer 434 is coupled to an input port of the splitter 436. The multiplexer 434 receives optical signals having different wavelengths λ1 to λ4 and provides a multiplexed optical signal from the output port. The multiplexer 434 is used to increase the capacity of optical communications.

[0096] The output ports of the splitter 436 are each coupled to one of the modulation units 438. The optical circuitry 424 can include four modulation units 438 connected in series. Each modulation unit 438 can be capable of modulating the polarization, phase, or intensity of an input optical signal. Each modulation unit 438 can include eight modulators 439 having the same configuration, where each modulator 439 is coupled to one of the output ports of the splitter 436. The optical signals passed through the modulation units 438 are then transmitted to the second I / O couplers 440.

[0097] The optical receiver 450 includes a second electronic die 452 and a second optical die 460 placed over the second electronic die 452. The second electronic die 452 includes electrically conductive pillars 454, interconnect structures 456, and at least one electronic component 458. The interconnect structures 456 connect the electronic component 458 to the electrically conductive pillars 454. The second optical die 460 can include electrical circuitry 462 and optical circuitry 464. The electrical circuitry 462 is electrically connected to the interconnect structures 456, and the optical circuitry 464 is configured to receive incoming optical signals.

[0098] As shown in Figure 26 The optical circuitry 464 can include a plurality of receive modules 470, as shown in

[0099] Figure 27 is a flowchart illustrating exemplary operations of an optoelectronic device in accordance with some embodiments of the present disclosure. The method 500 can be performed by processing logic that can comprise hardware (e.g., circuitry, dedicated logic, programmable logic, microcode, etc.), software (e.g., instructions executed on a processing device), or a combination thereof. For example, various steps in the method 500 can be performed using one or more application programming interfaces operating on one or more processing devices. It should be appreciated that not all of the steps are necessarily performed in carrying out the disclosure provided herein. Further, some steps can be performed simultaneously or in a different order than shown in Figure 27 The method 500 is described with reference to Figure 1 However, the method 500 is not limited to the example embodiments.

[0100] With reference to Figure 27 The method 500 includes a step S510 of creating a lookup table, a step S512 of receiving a start-up request, a step S514 of selecting one of candidate electronic dies listed in the lookup table, a step S516 of activating the selected electronic die, a step S518 of determining whether the activated electronic die is unresponsive, a step S520 of deactivating the activated electronic die and updating the lookup table if the activated electronic die is unresponsive, a step S522 of determining whether all electronic dies have failed, and a step S524 of issuing an alarm signal if all electronic dies have failed.

[0101] Method 500 is described below using the optoelectronic device 10 mentioned above. In particular, the optoelectronic device 10 includes the optical die 130 and a plurality of electronic dies 110C including communication drive circuitry. The communication drive circuitry is configured to drive the optical die 130 to generate, process, or receive optical signals.

[0102] Referring to Figure 1 and Figure 27 Method 500 can begin at step S510, where a lookup table is created. The lookup table to be used later can include information of all electronic dies 110C in the optoelectronic device 10. For example, the lookup table can include information reflecting the status (i.e., normal or abnormal) of each electronic die 110C (where an electronic die 110C with an abnormal status is considered a failed die). The information can further include historical process performance, historical (parameter) data collected from periodic testing, or the like associated with each electronic die 110C. In some embodiments, the lookup table includes an indication of whether an electronic die 110C is functional. A functional electronic die 110C can allow the optoelectronic device 10 to operate normally; thus, this electronic die 110C is extracted as a candidate electronic die. A non-functional electronic die 110C is considered a failed die.

[0103] Method 500 then proceeds to step 512, where a start-up request is received. The start-up request can be issued by an operator to start the optoelectronic device 10. In response to the start-up request, one of the candidate electronic dies 110C listed in the lookup table is selected (step S514). In some embodiments, an electronic die 110C is randomly selected from the candidate electronic dies 110C. In alternative embodiments, the method 500 can evaluate the candidate electronic dies 110C in some defined order (e.g., starting with the selected electronic dies 110C and then proceeding to the unselected electronic dies 110C).

[0104] Method 500 continues at step S516, where the selected electronic die 110C is activated to perform operations for driving the optical die 130. The operations include, for example, providing drive signals to the optical die 130 and monitoring the operational status of the optical die 130. In some embodiments, the unselected candidate electronic dies 110C are deactivated to prevent operational errors or device malfunctions.

[0105] Subsequently, the method 500 proceeds to a determination step S518. In step S518, it is determined whether the activated electronic die 110C is unresponsive. If the determination is negative (i.e., if the activated electronic die 110C is responsive), the method 500 returns to step S516, and the selected electronic die 110C remains activated. If, on the other hand, the determination is positive (i.e., if the activated electronic die 110C is unresponsive), the activated electronic die 110C is deemed to be in an abnormal state, and the method 500 proceeds to step S520. In step S520, the activated electronic die 110C is deactivated, and the lookup table is updated to reflect the abnormal operation of the deactivated electronic die 110C.

[0106] After the lookup table is updated, the method 500 proceeds to a determination step S522. In step S522, it is determined whether all electronic dies 110C have failed. If the determination is negative, the method returns to step S514, in which another candidate electronic die 110C is selected from the lookup table. If the determination in step S522 is positive (i.e., if all electronic dies 110C have failed), no candidate electronic die 130C is available, and the method 500 proceeds to step S524, in which an alert signal is issued to notify an operator that the optoelectronic device 10 has expired.

[0107] According to some embodiments of the present disclosure, an optoelectronic device is provided. The optoelectronic device includes a first die and a second die. The first die has a first backside and a first frontside opposite the first backside. The second die is disposed over the first die. The second die has a second backside and a second frontside opposite the second backside and bonded to the first frontside. The second die includes optoelectronic circuitry and electrical circuitry. The optoelectronic circuitry is configured to generate or process a first optical signal. The electrical circuitry is electrically coupled to the first die and is configured to control operation of the optoelectronic circuitry by a first electrical signal input into the first die or to provide a second electrical signal to the first die in response to the first optical signal.

[0108] According to some embodiments of the disclosure, an optical transceiver is provided. The optical transceiver includes an optical transmitter, an optical receiver, and an optical fiber. The optical transmitter includes a first electronic die and a first optical die. The first electronic die has a first backside and a first frontside opposite the first backside. The first optical die is disposed above the first electronic die. The first optical die has a second frontside and a second backside opposite the second frontside. The first optical die includes optical circuitry configured to generate or process a first optical signal and electrical circuitry electrically coupled to the first electronic die. The electrical circuitry is configured to control operation of the optical circuitry by a first electrical signal input into the first electronic die. The optical fiber is configured to transmit the first optical signal to the optical receiver.

[0109] According to some embodiments of the disclosure, a method of operating an optoelectronic device is provided. The optoelectronic device includes a plurality of electronic dies having a same configuration and an optical die disposed above the electronic dies. The method includes the steps of receiving a start-up request, activating one of the electronic dies, determining whether the activated electronic die is unresponsive, responsive to a determination that the activated electronic die is unresponsive, deactivating the activated electronic die, and activating another electronic die.

[0110] The foregoing summary of features of several embodiments recited herein enables one of ordinary skill in the art to better understand the aspects of the present disclosure. It will be appreciated by those skilled in the art that one can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages of the embodiments introduced herein. It will be also be appreciated by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the present disclosure and that various changes, substitutions, and alterations can be made therein without departing from the spirit and scope of the present disclosure.

[0111] Legend

[0112] 10: optoelectronic device

[0113] 30: optical transceiver

[0114] 40: optical transceiver

[0115] 100: dummy die

[0116] 102: substrate

[0117] 104: bonding layer

[0118] 110A: electronic die

[0119] 110B: electronic die

[0120] 110C: electronic die

[0121] 112: front side

[0122] 114: back side

[0123] 116: semiconductor substrate

[0124] 118: passivation layer

[0125] 120: conductive pillar

[0126] 122: interconnect structure

[0127] 124: electronic component

[0128] 130: optical die

[0129] 130B: optical die

[0130] 132: front side

[0131] 134: back side

[0132] 135: sidewall

[0133] 136: semiconductor layer

[0134] 138: optical circuitry

[0135] 138A: optical circuitry

[0136] 138B: optical circuitry

[0137] 138C: optical circuitry

[0138] 140: insulating layer

[0139] 142: electrical circuitry

[0140] 150: coupler recess

[0141] 152: coupler trench

[0142] 160: alignment mark

[0143] 162: alignment mark

[0144] 200: optical fiber

[0145] 200_1: optical fiber

[0146] 200_2: optical fiber

[0147] 200_3: optical fiber

[0148] 202: circuit board

[0149] 204: connector

[0150] 210: transmission circuitry

[0151] 220: optical transimpedance amplifier

[0152] 230: base

[0153] 232: guide hole

[0154] 310: optical transmitter

[0155] 312: first electronic die

[0156] 314: conductive pillar

[0157] 316: interconnect structure

[0158] 318: electronic assembly

[0159] 320: first optical die

[0160] 322: electrical circuitry

[0161] 324: optical circuitry

[0162] 330: transmission module

[0163] 332: first I / O coupler (I / O_1)

[0164] 334: splitter

[0165] 336: modulator

[0166] 338: second I / O coupler (I / O_2)

[0167] 350: optical receiver

[0168] 352: second electronic die

[0169] 354: conductive pillar

[0170] 356: interconnect structure

[0171] 358: electronic assembly

[0172] 360: optical die

[0173] 362: electrical circuitry

[0174] 364: optical circuitry

[0175] 370: fiber / receiving module

[0176] 372: I / O coupler (2DGC)

[0177] 374: photodetector (PD)

[0178] 380: adder circuit

[0179] 410: optical transmitter

[0180] 412: first electronic die

[0181] 414: conductive pillar

[0182] 416: first interconnect structure

[0183] 418: electronic assembly

[0184] 420: first optical die

[0185] 422: electrical circuitry

[0186] 424: optical circuitry

[0187] 432: first I / O coupler (I / O_1)

[0188] 434: multiplexer (MUX)

[0189] 436: splitter

[0190] 438: modulation unit

[0191] 439: modulator

[0192] 440: second I / O coupler (I / O_2)

[0193] 450: optical receiver

[0194] 452: second electronic die

[0195] 454: conductive pillar

[0196] 456: interconnect structure

[0197] 458: electronic assembly

[0198] 460: second optical die

[0199] 462: electrical circuitry

[0200] 464: optical circuitry

[0201] 470: optical fiber / optical circuitry

[0202] 472: I / O coupler (2DGC)

[0203] 474: optical de-multiplexer (DeMUX)

[0204] 476: photodetector

[0205] 500: method

[0206] 1162: first surface

[0207] 1164: second surface

[0208] 1222: dielectric stack

[0209] 1222B: bottommost conductive member

[0210] 1222T: topmost dielectric film

[0211] 1224: first conductive member

[0212] 1224T: topmost conductive member

[0213] 1362: top surface

[0214] 1364: back surface

[0215] 1382: input / output optical coupler

[0216] 1384: waveguide

[0217] 1386: optical member

[0218] 1390: first input / output optical coupler

[0219] 1392: splitter

[0220] 1394: modulator

[0221] 1396: second I / O coupler (I / O_2)

[0222] 1398: radiation generator

[0223] 1400: two-dimensional grating coupler

[0224] 1401: upper surface

[0225] 1402: first wedge structure

[0226] 1404: second wedge structure

[0227] 1406: grating structure

[0228] 1408: aperture

[0229] 1422: dielectric stack

[0230] 1422B: bottommost dielectric film

[0231] 1424: second conductive member

[0232] 1440: splitter network

[0233] 1442: splitter

[0234] 1500: one-dimensional grating coupler

[0235] 1502: grating structure

[0236] 1504: integrated waveguide

[0237] 1600: input coupler

[0238] 1602: photodetector

[0239] 1700: input / output optical coupler

[0240] 1700A: input / output optical coupler

[0241] 1700B: input / output optical coupler

[0242] 1702: edge coupler

[0243] 1704: polarizing beam splitter (PBS)

[0244] 1710: input section

[0245] 1720: first output section

[0246] 1730: second output section

[0247] 1740: transverse electric (TE)-transverse magnetic (TM) mode separation section

[0248] 1810: waveguide

[0249] 1820: waveguide

[0250] 1830: polarization rotator

[0251] 1910: waveguide

[0252] 1920: polarization rotator

[0253] 3122: front side

[0254] 3124: back side

[0255] 3202: front side

[0256] 3204: back side

[0257] 3522: front side

[0258] 3524: back side

[0259] 3602: front side

[0260] 3604: back side

[0261] 4122: front side

[0262] 4124: back side

[0263] 4202: front side

[0264] 4204: back side

[0265] A: area

[0266] AMP: operational amplifier

[0267] B1: buffer

[0268] B2: buffer

[0269] EX: other device

[0270] Iin: input current signal

[0271] IN: input port

[0272] L: inductor

[0273] L1: inductor

[0274] L2: inductor

[0275] La: line

[0276] OUT_1 to OUT_M: output port

[0277] R: resistor

[0278] S510: step

[0279] S512: step

[0280] S514: step

[0281] S516: step

[0282] S518: step

[0283] S520: step

[0284] S522: step

[0285] S524: step

[0286] Sin: input (voltage) signal

[0287] Sout: output (voltage) signal

[0288] VDD: power supply voltage level

[0289] Vout: output voltage signal

[0290] VSS: reference level

[0291] W: width

[0292] α: tilt angle.

Claims

1. An optoelectronic device, characterized by It comprises: a first die including a first backside and a first frontside opposite the first backside; and a second die placed over the first die and including a second frontside and a second backside opposite the second frontside and bonded to the first backside, wherein the second die comprises: optical circuitry configured to generate or process a first optical signal; and electrical circuitry electrically coupled to the first die configured to control operation of the optical circuitry by a first electrical signal input into the first die or generate a second electrical signal in response to the first optical signal and provide the second electrical signal to the first die.

2. The photovoltaic device of claim 1, wherein The first die comprises: a substrate; a dielectric material placed on the substrate and at the first frontside of the first die; an electronic component placed in or on the substrate; a conductive pillar extending through the dielectric material and to the substrate; and a first interconnect structure placed on the substrate and at the first backside of the first die, wherein the first interconnect structure connects the conductive pillar to the electronic component, wherein the conductive pillar is for receiving the first electrical signal from or transmitting the second electrical signal to external circuitry.

3. The optoelectronic device of claim 2, wherein: the electronic component is placed at the first frontside of the first die and laterally separated from the conductive pillar; the first interconnect structure comprises a plurality of first conductive members; and from a top view perspective, the electronic component is overlapped by the first conductive members.

4. The photovoltaic device of claim 2, wherein The second die further comprises: a semiconductor layer, wherein the optical circuitry is placed in or on the semiconductor layer; and a second interconnect structure placed on the semiconductor layer and at the second backside of the second die, wherein the second interconnect structure is physically and electrically coupled to the first interconnect structure.

5. The photovoltaic device of claim 4, wherein The optical circuitry comprises optical members operable to generate or process the first optical signal, the optical members being placed in or on the semiconductor layer and electrically coupled to the electrical circuitry, and from a top view perspective, the optical members are overlapped with the electronic component.

6. The photovoltaic device of claim 1, wherein The second die is hybrid bonded to the first die.

7. The photovoltaic device of claim 1, wherein It further comprises a dummy die laterally separated from the first die and bonded to the second die.

8. An optical transceiver, characterized in that... It comprises: an optical transmitter comprising: a first electronic die including a first backside and a first frontside opposite the first backside; and a first optical die placed over the first electronic die and including a second frontside and a second backside opposite the second frontside, wherein the first optical die comprises: optical circuitry configured to generate or process a first optical signal; and electrical circuitry electrically coupled to the first electronic die, wherein the electrical circuitry is configured to control operation of the optical circuitry by a first electrical signal input into the first electronic die; an optical receiver; and an optical fiber configured to transmit the first optical signal to the optical receiver.

9. The optical transceiver of claim 8, wherein The optical fiber is attached to the second frontside or the second backside of the first optical die.

10. The optical transceiver of claim 9, wherein The first optical die further comprises: a semiconductor layer, wherein the optical circuitry is placed in or on; an insulation layer placed on the semiconductor layer and at the second front side of the first optical die, wherein the insulation layer is used to enclose and cover the optical circuitry; and a coupler recess placed in the insulation layer, wherein the coupler recess overlaps with a portion of the optical circuitry from a top view perspective, wherein the optical fiber is placed on or in the coupler recess.

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