Semiconductor growth apparatus

Abstract

The utility model provides semiconductor growth equipment which comprises a flow guide device, a lifting driving device and a buffer driving device which are arranged around the inner side wall of a growth chamber, the flow guide device comprises a flow guide device body, and the buffer driving device is arranged on the side wall of the flow guide device body. The lifting driving device is arranged on any one of the top, the bottom and the side wall of the flow guide device body and is positioned outside the growth chamber to drive the flow guide device body to do lifting motion; or, the buffer driving device is arranged at the top of the flow guiding device body, and the lifting driving device is arranged on the side wall of the flow guiding device body and extends out of the growth cavity to drive the flow guiding device body to do lifting motion. The buffering driving device can provide upward auxiliary acting force for the flow guiding device body as compensation, and therefore the problem that due to starting abnormity of the lifting driving device, lifting of the flow guiding device is stuck is relieved or avoided.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, specifically to semiconductor growth equipment. Background Technology

[0002] Semiconductor growth equipment, particularly metal-organic chemical vapor deposition (MOCVD) equipment, is crucial for manufacturing semiconductor materials. This equipment forms a semiconductor material layer on a substrate using a vapor phase growth process. The fundamental steps in achieving vapor phase deposition are controlling the pressure within the chamber, heating the substrate to a specific temperature, and injecting process gases. The process gases are deposited on the substrate surface through thermal decomposition, forming the semiconductor material layer.

[0003] To ensure the stability of the gas flow field within the chamber, existing technologies include a flow guiding device arranged circumferentially around the base where the substrate to be coated is placed. The chamber's outlet channel is located on the side wall. Before and after the vapor phase growth process, the outlet channel is concealed or exposed by controlling the raising and lowering of the flow guiding device to facilitate subsequent outlet operations. Typically, a drive device, such as a motor, is installed on the flow guiding device to achieve the raising and lowering motion.

[0004] Although existing technologies have achieved lifting control of flow guiding devices, in practical applications, commonly used drive devices, such as motors, inevitably encounter problems when initiating lifting control of the flow guiding device. For example, skipping steps or slipping may occur during startup, causing the flow guiding device to jam during lifting, affecting the stability and safety of the flow guiding device's movement. Utility Model Content

[0005] In view of the defects and deficiencies of existing semiconductor growth equipment, this application provides a semiconductor growth equipment that can alleviate or avoid the problem of flow guiding device lifting and jamming caused by abnormal start-up of the drive device.

[0006] This application provides a semiconductor growth apparatus, including a growth chamber and a flow guiding device disposed within the growth chamber. The flow guiding device is disposed around the inner sidewall of the growth chamber and includes a flow guiding device body. It also includes a lifting drive device and a buffer drive device: the buffer drive device is disposed on the sidewall of the flow guiding device body and extends outside the growth chamber, or is disposed on the top of the flow guiding device body and extends outside the growth chamber, to provide an upward auxiliary force to the flow guiding device body; when the buffer drive device is disposed on the sidewall of the flow guiding device body, the lifting drive device is disposed on any one of the top, bottom, and sidewall of the flow guiding device body and located outside the growth chamber to drive the flow guiding device body to perform lifting and lowering movements; when the buffer drive device is disposed on the top of the flow guiding device body, the lifting drive device is disposed on the sidewall of the flow guiding device body and extends outside the growth chamber, to drive the flow guiding device body to perform lifting and lowering movements.

[0007] In one embodiment, the lifting drive device includes at least one lifting control device.

[0008] In one embodiment, the buffer drive device includes at least one buffer device.

[0009] In one embodiment, the lifting control device includes a lifting cylinder.

[0010] In one embodiment, the buffer device includes a gas spring.

[0011] In one implementation, the number of lifting drive devices is at least two.

[0012] In one implementation, the number of buffer drive devices is at least two.

[0013] In one embodiment, each of the buffer drive devices is disposed around the side wall of the flow guiding device body, and each of the lifting drive devices is disposed around any one of the top, bottom and side wall of the flow guiding device body.

[0014] In one embodiment, each of the buffer drives is disposed on the top of the flow guiding device body, and each of the lifting drive devices is disposed on the side wall of the flow guiding device body.

[0015] In one embodiment, the lifting drive device includes a first bracket and a first lifting control device; the first bracket is connected to the side wall of the guide device body and extends through the side wall of the growth chamber to the outside of the growth chamber; the first lifting control device is connected to the first bracket and located outside the growth chamber to drive the guide device body to perform lifting movements.

[0016] In one embodiment, the buffer drive device includes a first buffer device that is sealed through the top of the growth chamber and connected to the top of the flow guiding device body to provide an upward auxiliary force to the flow guiding device body.

[0017] In one embodiment, the buffer drive device includes a second support and a first buffer device; the second support is connected to the side wall of the flow guiding device body and extends through the side wall of the growth chamber to the outside of the growth chamber; the first buffer device is connected to the second support and located outside the growth chamber to provide an upward auxiliary force to the second support.

[0018] In one embodiment, the first support is further provided with a second buffer device, which is located outside the growth chamber to provide an upward auxiliary force to the first support. The second support is further provided with a second lifting control device, which is located outside the growth chamber.

[0019] In one implementation, the first lifting control device and the second lifting control device are located on opposite sides outside the growth chamber.

[0020] In one embodiment, the lifting drive device includes a first lifting control device, which is sealed through the top of the growth chamber and connected to the top of the guide device body, or sealed through the bottom of the growth chamber and connected to the bottom of the guide device body.

[0021] In one embodiment, the growth chamber is provided with a base to support the substrate, and the flow guiding device is arranged around the base.

[0022] As described above, the semiconductor growth apparatus of this application has the following beneficial effects:

[0023] The semiconductor growth apparatus of this application includes a flow guiding device arranged around the inner sidewall of the growth chamber. The flow guiding device includes a flow guiding device body. A buffer driving device is disposed on the sidewall of the flow guiding device body and extends outside the growth chamber, or disposed on the top of the flow guiding device body and extends outside the growth chamber, to provide an upward auxiliary force to the flow guiding device body. When the buffer driving device is disposed on the sidewall of the flow guiding device body, the lifting driving device is disposed at any one of the top, bottom, and sidewall of the flow guiding device body and located outside the growth chamber to drive the flow guiding device body to move up and down. When the buffer driving device is disposed on the top of the flow guiding device body, the lifting driving device is disposed on the sidewall of the flow guiding device body and extends outside the growth chamber to drive the flow guiding device body to move up and down. Even if the lifting driving device experiences abnormal starting conditions such as step loss or slippage during startup, the buffer driving device can provide an upward auxiliary force to the flow guiding device body as compensation, thereby mitigating or avoiding the problem of flow guiding device jamming caused by abnormal startup of the lifting driving device. Attached Figure Description

[0024] Figure 1 The diagram shows a schematic representation of a semiconductor growth apparatus in the prior art.

[0025] Figure 2 The diagram shown is a structural schematic of a semiconductor growth apparatus according to Embodiment 1 of this utility model.

[0026] Figure 3 The diagram shown is a structural schematic of another semiconductor growth apparatus according to Embodiment 1 of this utility model;

[0027] Figure 4 The diagram shown is a top view of the semiconductor growth apparatus according to Embodiment 2 of this utility model.

[0028] Figure 5 The diagram shown is a top view of a semiconductor growth apparatus according to Embodiment 3 of this utility model.

[0029] Figure 6 The diagram shown is a top view of another semiconductor growth apparatus according to Embodiment 3 of this utility model.

[0030] Figure 7 The diagram shown is a top view of another semiconductor growth apparatus according to Embodiment 3 of this utility model.

[0031] Figure 8 The diagram shown is a structural schematic of a semiconductor growth apparatus according to Embodiment 4 of this utility model.

[0032] Figure 9The diagram shown is a structural schematic of another semiconductor growth apparatus according to Embodiment 4 of this utility model;

[0033] Figures 10-12 The diagram shown is a top view of the arrangement of the lifting drive device and the buffer drive device in the semiconductor growth equipment of Embodiment 4 of this utility model.

[0034] Figure 13 The diagram shown is a structural schematic of a semiconductor growth apparatus according to Embodiment 5 of this utility model;

[0035] Figure 14 The diagram shown is a structural schematic of a semiconductor growth apparatus according to Embodiment Six of this utility model;

[0036] Figure 15 The diagram shown is a structural schematic of a semiconductor growth apparatus according to Embodiment Seven of this utility model.

[0037] Component designation explanation

[0038] 10, Growth chamber; 20, Flow guiding device body; 30, Gas injection device; 40, Base; 50, Heating device; 100, Lifting drive device; 110, First support; 120, First lifting control device; 130, Second buffer device; 200, Buffer drive device; 210, Second support; 220, First buffer device; 230, Second lifting control device. Detailed Implementation

[0039] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0040] Please see Figures 1 to 15 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Therefore, the illustrations only show the components related to this utility model and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0041] Figure 1The image shows a semiconductor growth apparatus in the prior art, including a growth chamber 10, a flow guiding device body 20, a gas injection device 30, a base 40, and a heating device 50. Since the outlet channel of the base 40 and / or the coated substrate is located on the side wall of the growth chamber 10, in order to avoid the outlet channel from having an adverse effect on the airflow field and temperature field, the flow guiding device body 20 is arranged along the axial direction of the growth chamber 10. Before and after performing the vapor phase growth process, the lifting and lowering of the flow guiding device body 20 is controlled to shield or expose the outlet channel.

[0042] The side wall of the flow guiding device body 20 is provided with an opening for the substrate carried on the base 40 to enter and exit (not shown in the figure). Before the substrate needs to be rotated into or out of the growth chamber 10, the lifting drive device controls the flow guiding device body 20 to rise so that the opening is aligned with the radial direction of the base 40 to facilitate the loading and unloading of the substrate. After the substrate is loaded and unloaded, the lifting drive device controls the flow guiding device body 20 to fall so that the opening position is lower than the position of the base 40 so as not to affect the process gas flow field near and above the base.

[0043] In the prior art, a drive device capable of driving the flow guide device body 20 to achieve lifting and lowering motion is usually set on the flow guide device body 20. However, when driving the flow guide device body 20, problems inevitably occur when starting the lifting and lowering control of the flow guide device body 20. For example, when using a motor to drive the start, there will be step loss, slippage and jamming, which will affect the stability and safety of the flow guide device movement.

[0044] To address the above deficiencies, this application provides a semiconductor growth apparatus. The following embodiments will provide a detailed description. Example 1

[0045] This embodiment provides a semiconductor growth apparatus, such as... Figure 2 As shown, the semiconductor growth apparatus includes a growth chamber 10 and a flow guiding device. The flow guiding device is disposed inside the growth chamber 10 and surrounds the inner sidewall of the growth chamber 10. The flow guiding device includes a flow guiding device body 20.

[0046] like Figure 2 As shown, the semiconductor growth apparatus also includes a lifting drive device 100 and a buffer drive device 200.

[0047] The lifting drive device 100 includes a first support 110 and a first lifting control device 120. The first support 110 is connected to the side wall of the guide device body 20 and extends through the side wall of the growth chamber 10 to the outside of the growth chamber 10. The first lifting control device 120 is connected to the first support 110 and located outside the growth chamber 10 to drive the guide device body 10 to perform lifting and lowering movements. The buffer drive device 200 includes a second support 210 and a first buffer device 220. The second support 210 is connected to the side wall of the guide device body 20 and extends through the side wall of the growth chamber 10 to the outside of the growth chamber 10. The first buffer device 220 is connected to the second support 210 and located outside the growth chamber 10 to provide an upward auxiliary force to the second support 210.

[0048] In this embodiment, when the first lifting control device 120 experiences abnormal startup conditions such as step loss or slippage, the first buffer device 220 can provide an upward auxiliary force to the second support 210 as compensation, thereby reducing or avoiding the problem of the flow guide device being stuck due to abnormal startup of the drive device.

[0049] In optional embodiments, such as Figure 2 The first buffer device 220 includes a gas spring, the piston rod of which is connected to the lower surface of the second bracket 210; the first lifting control device 120 includes a lifting cylinder, the drive end of which is connected to the lower surface of the first bracket 110. Alternatively, as... Figure 3 As shown, the piston rod of the gas spring is connected to the lower surface of the second bracket 210; the drive end of the lifting cylinder is connected to the upper surface of the first bracket 110. When the guide device body 20 rises, the forces exerted on the guide device body 20 by the first lifting control device 120 and the first buffer device 220 are both upward, and the resultant force of the two is greater than the weight of the guide device body 20. More preferably, the difference between the resultant force of the two and the weight of the guide device body 20 is a certain value, which is beneficial to controlling a uniform and stable rise. When the guide device body 20 falls, the upward auxiliary force provided by the first buffer device 220 is less than the resultant force of the force exerted on the guide device body 20 by the first lifting control device 120 and the weight of the guide device body 20. More preferably, the difference between the resultant force of the two and the auxiliary force is a certain value, which is beneficial to controlling a uniform and stable fall.

[0050] In an optional embodiment, the first support 110 and the second support 210 may or may not be at the same height on the side wall of the flow guiding device body 20. Preferably, the first support 110 and the second support 210 are at the same height on the side wall of the flow guiding device body 20. Having the first support 110 and the second support 210 at the same height helps maintain the symmetry and balance of the flow guiding device body 20, which is important for ensuring the stability and reliability of the equipment during operation. Furthermore, having the first support 110 and the second support 210 at the same height can distribute the load more evenly, reduce the pressure on individual supports, and improve the load-bearing capacity of the entire structure. At the same time, having the first support 110 and the second support 210 at the same height can provide a neater and more harmonious appearance.

[0051] In an optional embodiment, the first buffer device 220 further includes a buffer control device electrically connected to a gas spring to adjust the magnitude of the auxiliary force.

[0052] In optional embodiments, such as Figure 2 As shown, the semiconductor growth apparatus also includes a gas injection device 30, a substrate 40, and a heating device 50. The gas injection device 30 injects raw material gas for the growth reaction into the growth chamber 10. The substrate 40 and the heating device 50 are both disposed within the growth chamber 10. The substrate 40 is used to support the substrate and is rotatable, thereby causing the raw material gas to mix uniformly on the epitaxial surface. The heating device 50 is used to heat the surface of the substrate 40 away from the epitaxial surface. A flow guiding device is disposed around the substrate 40 within the growth chamber 10. Example 2

[0053] This embodiment also provides a semiconductor growth apparatus, such as... Figure 4 As shown, the semiconductor growth apparatus also includes a growth chamber 10 and a flow guiding device. The flow guiding device is disposed inside the growth chamber 10 and surrounds the inner sidewall of the growth chamber 10. The flow guiding device includes a flow guiding device body 20. This embodiment differs from Embodiment 1 in that:

[0054] like Figure 4 As shown, the first support 110 and the second support 210 are respectively arranged on opposite sides outside the growth chamber 10. Similarly, the first lifting control device 120 and the first buffer device 220 are respectively arranged on opposite sides outside the growth chamber 10. When the first lifting control device 120 drives the flow guiding device body 20 to move up and down, the first buffer device 220 provides an upward auxiliary force on the corresponding side of the flow guiding device body 20. The force on the flow guiding device body 20 is uniform, which helps to reduce or avoid the problem of flow guiding device lifting and lowering jamming caused by abnormal start of the first lifting control device 120. Example 3

[0055] This embodiment also provides a semiconductor growth apparatus, such as... Figures 5 to 7 As shown, the semiconductor growth apparatus also includes a growth chamber 10 and a flow guiding device. The flow guiding device is disposed inside the growth chamber 10 and surrounds the inner sidewall of the growth chamber 10. The flow guiding device includes a flow guiding device body 20. This embodiment differs from Embodiment 1 or Embodiment 2 in that:

[0056] like Figure 5 and Figure 6 As shown, the number of first supports 110 equipped with the first lifting control device 120 is at least two; the number of second supports 210 equipped with the first buffer device 220 is at least two, and they are arranged on opposite sides of the growth chamber 10, corresponding one-to-one with the first supports 110 equipped with the first lifting control device 120. That is, in the top view, the first supports 110 and the second supports 120 are located on the same diameter of the growth chamber 10, and the first supports 110 and the second supports 120 located on the same diameter form a group; there is an angle between the diameters of the first supports 110 and the second supports 120 in different groups. Each first lifting control device 120 provides a corresponding first buffer device 220 on the opposite side of the flow guiding device body 20. The driving force provided by the first lifting control device 120 and the auxiliary force provided by the first buffer device 220 correspond one-to-one, which is beneficial to the smooth lifting and lowering of the flow guiding device body 20.

[0057] In optional embodiments, such as Figure 7 As shown, viewed from above, there can be two first supports 110 on the same diameter and two second supports 210 on the same diameter. Thus, the driving force provided by the two first lifting control devices 120 is located on opposite sides of the guide device body 20, and the auxiliary force provided by the two first buffer devices 220 is located on opposite sides of the guide device body 20, which also helps the guide device 20 to lift smoothly.

[0058] In an optional embodiment, when the number of first supports 110 is at least 3 and the number of second supports 210 is at least 3, the arrangement of the first supports 110 and the second supports 210 can be as follows: Figure 5 and Figure 7 A combination, or it could be Figure 6 and Figure 7 The combination of . Example 4

[0059] This embodiment also provides a semiconductor growth apparatus, such as... Figure 8 and Figure 9As shown, the semiconductor growth apparatus also includes a growth chamber 10 and a flow guiding device. The flow guiding device is disposed inside the growth chamber 10 and surrounds the inner sidewall of the growth chamber 10. The flow guiding device includes a flow guiding device body 20. This embodiment differs from embodiments one to three in that:

[0060] like Figure 8 and Figure 9 As shown, the first support 110 is also provided with a second buffer device 130, which is located outside the growth chamber 10 to provide an upward auxiliary force to the first support 110. The second buffer device 130 includes a gas spring. Both the first support 110 and the second support 210 are connected to the gas spring, which helps to further reduce or avoid the problem of the flow guide device getting stuck due to abnormal start-up of the first lifting control device 120.

[0061] In optional embodiments, such as Figure 8 and Figure 9 As shown, the second support 210 is also equipped with a second lifting control device 230, which is located outside the growth chamber 10. The second lifting control device 230 includes a lifting cylinder. Specifically, as shown... Figure 8 The driving end of the first lifting control device 120 and the piston rod of the second buffer device 130 are both connected to the lower surface of the first bracket 110, and the piston rod of the first buffer device 220 and the driving end of the second lifting control device 230 are both connected to the lower surface of the second bracket 210. Figure 9 As shown, the drive end of the first lifting control device 120 is connected to the upper surface of the first bracket 110, the piston rod of the second buffer device 130 is connected to the lower surface of the first bracket 110, the piston rod of the first buffer device 220 is connected to the lower surface of the second bracket 210, and the drive end of the second lifting control device 230 is connected to the upper surface of the second bracket 210.

[0062] like Figures 10 to 12 As shown, the first lifting control device 120 and the second lifting control device 230 are located on opposite sides outside the growth chamber 10. By providing lifting control devices and buffer devices in the same drive device, the buffer device of each drive device can provide the force required for the initial action when the lifting control device is started, further reducing the pressure when each lifting control device is started. At the same time, each drive device can play a corrective role when running, further ensuring the smoothness of the lifting of the guide device body 20 and the service life of the drive device.

[0063] Specifically, such as Figure 10As shown, the second buffer device 130 is located on the first support 110 near the growth chamber 10, and the first lifting control device 120 is located on the first support 110 away from the growth chamber 10; the first buffer device 220 is located on the second support 210 near the growth chamber 10, and the second lifting control device 230 is located on the second support 210 away from the growth chamber 10.

[0064] like Figure 11 As shown, the first lifting control device 120 is located on the first support 110 near the growth chamber 10, and the second buffer device 130 is located on the first support 110 away from the growth chamber 10; the second lifting control device 230 is located on the second support 210 near the growth chamber 10, and the first buffer device 220 is located on the second support 210 away from the growth chamber 10.

[0065] like Figure 12 As shown, the first lifting control device 120 is located on the first support 110 near the growth chamber 10, and the second buffer device 130 is located on the first support 110 away from the growth chamber 10; the first buffer device 220 is located on the second support 210 near the growth chamber 10, and the second lifting control device 230 is located on the second support 210 away from the growth chamber 10. Alternatively, the second buffer device 130 is located on the first support 110 near the growth chamber 10, and the first lifting control device 120 is located on the first support 110 away from the growth chamber 10; the second lifting control device 230 is located on the second support 210 near the growth chamber 10, and the first buffer device 220 is located on the second support 210 away from the growth chamber 10.

[0066] In an optional embodiment, the number of first supports 110 equipped with a first lifting control device 120 is at least two, and the number of second supports 210 equipped with a second lifting control device 230 is at least two. The distribution of the first supports 110 and the second supports 210 can be referenced. Figures 5 to 7 This will not be elaborated upon here. Example 5

[0067] This embodiment also provides a semiconductor growth apparatus, such as... Figure 13 As shown, the semiconductor growth apparatus includes a growth chamber 10 and a flow guiding device. The flow guiding device includes a flow guiding device body 20, which is disposed inside the growth chamber 10 and surrounds the inner sidewall of the growth chamber 10. The flow guiding device body 20 includes a top, an outer sidewall, and a bottom from top to bottom. This embodiment differs from embodiments one to four in that:

[0068] like Figure 13As shown, the semiconductor growth apparatus further includes at least one lifting drive device 100 and at least one buffer drive device 200. The lifting drive device 100 includes at least one first lifting control device 120, which drives the flow guiding device body 20 to move up and down. The buffer drive device 200 includes at least one first buffer device 220, which provides an upward force to the flow guiding device body 20. The lifting drive device 100 is selectively connected to the top, outer side wall, and bottom of the flow guiding device body 20; the buffer drive device 200 is selectively connected to the top, outer side wall, and bottom of the flow guiding device body 20. However, the lifting drive device 100 and the buffer drive device 200 are not simultaneously connected to the same location (i.e., the top, outer side wall, and bottom) of the flow guiding device body 20. In other words, when the lifting drive device 100 is connected to one of the top, outer side wall, and bottom of the flow guiding device body 20, the buffer drive device 200 is connected to one of the other two locations. For example, when the lifting drive device 100 is connected to the top of the flow guide device body 20, the buffer drive device 200 is connected to the outer wall of the flow guide device body 20 or the bottom of the flow guide device body 20.

[0069] The semiconductor growth apparatus in this embodiment includes a flow guiding device, which includes a flow guiding device body 20. By providing at least one lifting drive device 100 and at least one buffer drive device 200 on the flow guiding device body 20, the stuttering and asynchrony caused by the starting problem of the lifting drive device are reduced or avoided, thereby improving the stability and safety of the flow guiding device movement.

[0070] In an optional embodiment, the first buffer device 220 includes a gas spring, and the first lifting control device 120 includes a lifting cylinder. The lifting cylinder and gas spring work together to improve the overall stability of the equipment and reduce equipment failures and damage caused by vibration and impact. The high torque output and easy control of the lifting cylinder, along with the shock absorption and adaptive performance of the gas spring, jointly optimize the operating efficiency of the equipment, enabling it to complete its work tasks more efficiently. The relatively simple structure of the lifting cylinder and gas spring facilitates maintenance and reduces equipment maintenance costs.

[0071] In optional embodiments, such as Figure 13 As shown, the semiconductor growth apparatus also includes a gas injection device 30, a base 40, and a heating device 50. The gas injection device 30 injects raw material gas for epitaxial growth into the growth chamber 10. The base 40 and the heating device 50 are both disposed in the growth chamber 10. The base 40 is used to support the substrate and can rotate, thereby driving the raw material gas to mix evenly on the epitaxial surface. The heating device 50 is used to heat the surface of the base 40 away from the epitaxial surface.

[0072] In an optional embodiment, the lifting drive device 100 is connected to the outer wall of the flow guiding device body 20, and the buffer drive device 200 is connected to the top of the flow guiding device body 20. The lifting drive device 100 also includes a first bracket 110, which is connected to the outer wall of the flow guiding device body 20 and extends outside the growth chamber 10. Specifically, as Figure 1 As shown, the first lifting control device 120 is connected to the first support 110 to drive the flow guiding device body 20 to move up and down through the first support 110. The first buffer device 220 is connected to the top of the flow guiding device body 20 to provide an upward force to the flow guiding device body 20. Both the first lifting control device 120 and the first buffer device 220 are located outside the growth chamber 10.

[0073] In optional embodiments, such as Figure 13 As shown, the number of first lifting control devices 120 is not less than 2, the number of first brackets 110 is not less than 2, the first brackets 110 are arranged in a one-to-one correspondence with the first lifting control devices 120, each first bracket 110 is evenly arranged along the outer side wall of the guide device body 20, and each first bracket 110 has the same height.

[0074] In optional embodiments, such as Figure 13 As shown, the number of first buffer devices 220 is not less than 2, and they are located on the same side of the guide device body 20 as each of the first lifting control devices 120. Example 6

[0075] This embodiment also provides a semiconductor growth apparatus, such as... Figure 14 As shown, the semiconductor growth apparatus provided in this embodiment also includes a growth chamber 10 and a flow guiding device. The flow guiding device includes a flow guiding device body 20, which is disposed inside the growth chamber 10 and surrounds the inner sidewall of the growth chamber 10. The flow guiding device body 20 includes a top, an outer sidewall, and a bottom from top to bottom. The difference between this embodiment and embodiments one to five is that:

[0076] like Figure 14 As shown, the lifting drive device 100 is connected to the bottom of the flow guiding device body 20, and the buffer drive device 200 is connected to the outer wall of the flow guiding device body 20. The first lifting control device 120 is connected to the bottom of the flow guiding device body 20 to drive the flow guiding device body 20 to perform lifting and lowering movements. The buffer drive device 200 also includes a second support 210, which is connected to the outer wall of the flow guiding device body 20 and extends outside the growth chamber 10. The first buffer device 220 is connected to the second support 210 to provide an upward force to the flow guiding device body 20 through the second support 210. The first lifting control device 120 and the first buffer device 220 are located outside the growth chamber 10.

[0077] In optional embodiments, such as Figure 14 As shown, the number of first buffer devices 220 is not less than 2, the number of second supports 210 is not less than 2, the second supports 210 are arranged in a one-to-one correspondence with the first buffer devices 220, each second support 210 is evenly arranged along the outer side wall of the guide device body 20, and each second support 210 has the same height. Example 7

[0078] This embodiment also provides a semiconductor growth apparatus, such as... Figure 15 As shown, the semiconductor growth apparatus provided in this embodiment also includes a growth chamber 10 and a flow guiding device. The flow guiding device includes a flow guiding device body 20, which is disposed inside the growth chamber 10 and surrounds the inner sidewall of the growth chamber 10. The flow guiding device body 20 includes a top, an outer sidewall, and a bottom from top to bottom. The difference between this embodiment and embodiments one to six is ​​that:

[0079] like Figure 15 As shown, the lifting drive device 100 is connected to the top of the flow guiding device body 20, and the buffer drive device 200 is connected to the outer wall of the flow guiding device body 20. The first lifting control device 120 is connected to the top of the flow guiding device body 20 to drive the flow guiding device body 20 to perform lifting and lowering movements. The buffer drive device 200 also includes a second support 210, which is connected to the outer wall of the flow guiding device body 20 and extends outside the growth chamber 10. The first buffer device 220 is connected to the second support 210 to provide an upward force to the flow guiding device body 20 through the second support 210. The first lifting control device 120 and the first buffer device 220 are located outside the growth chamber 10.

[0080] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A semiconductor growth apparatus, characterized in that, It includes a growth chamber and a flow guiding device disposed in the growth chamber. The flow guiding device is disposed around the inner sidewall of the growth chamber and includes a flow guiding device body. It also includes a lifting drive device and a buffer drive device; The buffer drive device is disposed on the side wall of the flow guiding device body and extends to the outside of the growth chamber, or is disposed on the top of the flow guiding device body and extends to the outside of the growth chamber, so as to provide an upward auxiliary force to the flow guiding device body. When the buffer drive device is located on the side wall of the flow guide device body, the lifting drive device is located at any one of the top, bottom and side wall of the flow guide device body and is located outside the growth chamber to drive the flow guide device body to perform lifting and lowering movements. When the buffer drive device is located on the top of the flow guiding device body, and the lifting drive device is located on the side wall of the flow guiding device body and extends to the outside of the growth chamber, the flow guiding device body is driven to move up and down.

2. The semiconductor growth apparatus according to claim 1, characterized in that, The lifting drive device includes at least one lifting control device, the buffer drive device includes at least one buffer device, the lifting control device includes a lifting cylinder, and the buffer device includes a gas spring.

3. The semiconductor growth apparatus according to claim 1, characterized in that: The number of lifting drive devices is at least 2, and the number of buffer drive devices is at least 2; Each of the aforementioned buffer drive devices is disposed around the side wall of the flow guiding device body, and each of the aforementioned lifting drive devices is disposed around any one of the top, bottom, and side wall of the flow guiding device body; or, Each of the buffer drive devices is disposed on the top of the flow guiding device body, and each of the lifting drive devices is disposed on the side wall of the flow guiding device body.

4. The semiconductor growth apparatus according to claim 1, characterized in that: The lifting drive device includes a first bracket and a first lifting control device; The first support is connected to the side wall of the flow guiding device body and extends through the side wall of the growth chamber to the outside of the growth chamber. The first lifting control device is connected to the first support and located outside the growth chamber to drive the flow guiding device body to move up and down.

5. The semiconductor growth apparatus according to claim 4, characterized in that: The buffer drive device includes a first buffer device, which is sealed through the top of the growth chamber and connected to the top of the flow guiding device body to provide an upward auxiliary force to the flow guiding device body.

6. The semiconductor growth apparatus according to claim 1, characterized in that: The buffer drive device includes a second bracket and a first buffer device; The second support is connected to the side wall of the flow guiding device body and extends through the side wall of the growth chamber to the outside of the growth chamber. The first buffer device is connected to the second support and located outside the growth chamber to provide an upward auxiliary force to the second support.

7. The semiconductor growth apparatus according to claim 6, characterized in that, The lifting drive device includes a first bracket and a first lifting control device. The first bracket is connected to the side wall of the body of the flow guiding device and extends through the side wall of the growth chamber to the outside of the growth chamber. The first bracket is also provided with a second buffer device located outside the growth chamber to provide an upward auxiliary force to the first bracket. The second bracket is also provided with a second lifting control device located outside the growth chamber.

8. The semiconductor growth apparatus according to claim 7, characterized in that, The first lifting control device and the second lifting control device are located on opposite sides outside the growth chamber.

9. The semiconductor growth apparatus according to claim 6, characterized in that, The lifting drive device includes a first lifting control device, which is sealed through the top of the growth chamber and connected to the top of the guide device body, or sealed through the bottom of the growth chamber and connected to the bottom of the guide device body.

10. The semiconductor growth apparatus according to claim 1, characterized in that, The growth chamber is provided with a base to support the substrate, and the body of the flow guiding device is arranged around the base.

Images