Semiconductor process chamber and semiconductor process equipment

Abstract

The embodiment of the utility model provides a semiconductor process chamber and semiconductor process equipment, and the semiconductor process chamber comprises a cavity, a process disc, a pedestal, a first blocking member, and a second blocking member. The cavity is provided with a containing cavity, the process disc, the first blocking piece and the second blocking piece are all arranged in the containing cavity, the base is sleeved with the process disc, and the process disc is clamped between the first blocking piece and the second blocking piece. The process disc is clamped between the first resisting piece and the second resisting piece, so that the process disc can be limited by the first resisting piece and the second resisting piece, and the process disc is prevented from sliding and rubbing with the base.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a semiconductor process chamber and semiconductor process equipment. Background Technology

[0002] In semiconductor manufacturing processes, it is sometimes necessary to place a process disk around the substrate. Taking a silicon epitaxial chamber as an example, the silicon epitaxial chamber includes a process disk and a substrate. Specifically, the process disk is a quartz disk, and the substrate is a graphite substrate. The graphite substrate is located within the area enclosed by the quartz disk. A perforation is formed at the bottom of the quartz disk, through which the drive shaft of the actuator can pass and connect with the graphite substrate, thereby driving the graphite substrate to rise, fall, and rotate.

[0003] In related technologies, the process disk may slip, resulting in a positional deviation that causes the process disk to move closer to one side of the graphite substrate. Consequently, when the process disk is misaligned, the substrate may rub against the process disk during substrate rotation, potentially generating particulate matter that could contaminate the process chamber. Utility Model Content

[0004] This application provides a semiconductor process chamber and semiconductor process equipment to address the problem of potential rubbing against the base after the sliding process disk experiences positional deviation.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows:

[0006] In a first aspect, embodiments of this application provide a semiconductor process chamber.

[0007] The semiconductor process chamber provided in this application includes: a cavity, a process disk, a base, a first stop member, and a second stop member; the cavity has a receiving cavity, the process disk, the first stop member, and the second stop member are all disposed in the receiving cavity, the process disk is sleeved outside the base, and the process disk is sandwiched between the first stop member and the second stop member.

[0008] Optionally, the lower surface of the first abutment is provided with a first friction texture, and the lower surface of the second abutment is provided with a second friction texture. The lower surface of the first abutment is in contact with the bottom wall of the accommodating cavity, and the lower surface of the second abutment is in contact with the bottom wall of the accommodating cavity.

[0009] Optionally, the edge of the upper surface of the first abutment facing the process disk is a first arc surface, which is in contact with the outer surface of the process disk; the edge of the upper surface of the second abutment facing the process disk is a second arc surface, which is in contact with the outer surface of the process disk.

[0010] Optionally, the lower surface of the first abutment has a first arc edge facing the process disk, which is in contact with the outer surface of the process disk; the lower surface of the second abutment has a second arc edge facing the process disk, which is in contact with the outer surface of the process disk.

[0011] Optionally, the first blocking member is a first hot wall, and the second blocking member is a second hot wall; the upper surface of the process tray, the upper surface of the first blocking member, and the upper surface of the second blocking member are flush.

[0012] Optionally, the cavity includes a main body, a first end cap, and a second end cap; the main body has a through area that extends through the main body along the length of the semiconductor process chamber, and the first end cap and the second end cap respectively cover the two ends of the through area, and the first end cap, the first abutment, the second abutment, and the second end cap are arranged sequentially along the length.

[0013] Optionally, the first end cover is provided with at least three air inlets spaced apart along the width direction of the semiconductor process chamber, each air inlet facing the airflow area between the top surface of the through area and the upper surface of the first abutment. The second end cover is provided with an exhaust device for discharging gas from the airflow area. The air inlets are used to input a first process gas into the airflow area, and the air inlets are also used to input a second process gas into the airflow area.

[0014] Optionally, the air inlets at both ends of each of the air inlets are respectively a first air inlet and a second air inlet. The semiconductor process chamber further includes a first gas supply pipe and a second gas supply pipe. The first gas supply pipe is connected to the first air inlet and is used to supply the second process gas into the airflow area through the first air inlet. The second gas supply pipe is connected to the second air inlet and is used to supply the second process gas into the airflow area through the second air inlet.

[0015] Optionally, the first abutment has a first recessed gripping portion on the side facing the first end cap, and the second abutment has a second recessed gripping portion on the side facing the second end cap.

[0016] Secondly, embodiments of this application provide a semiconductor process apparatus.

[0017] The semiconductor process equipment provided in this application includes: a driver and any one of the semiconductor process chambers provided in this application; the driver is used to drive the base to move.

[0018] Optionally, the process tray includes a support portion, the base is located above the support portion, the support portion is provided with a through hole, the base is provided with a rotating docking portion at the part opposite to the through hole, and the driver is used to drive the connection with the rotating docking portion.

[0019] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects:

[0020] In the embodiments of this application, since the process disk is sandwiched between the first stop and the second stop, the first stop and the second stop can be used to limit the process disk to prevent the process disk from sliding and scraping against the base.

[0021] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 A schematic diagram of a semiconductor process apparatus configured with a semiconductor process chamber, provided for an embodiment of this application;

[0024] Figure 2 for Figure 1 The image shows a cross-sectional view of a semiconductor process apparatus along a section passing through line AA.

[0025] Figure 3 A top view of a first blocking member provided in an embodiment of this application;

[0026] Figure 4 for Figure 3 The front view of the first stopper shown in the figure;

[0027] Figure 5 for Figure 3 The first abutment shown is a cross-sectional view along the section passing through the straight line BB;

[0028] Figure 6 for Figure 3 The left view of the first stopper shown in the image;

[0029] Figure 7 A top view of a second blocking member provided in an embodiment of this application;

[0030] Figure 8 This is a schematic diagram of another semiconductor process apparatus configured with a semiconductor process chamber, provided for an embodiment of this application, showing a wafer supported on a base.

[0031] Explanation of reference numerals in the attached figures:

[0032] 1- Semiconductor process equipment;

[0033] 100 - Semiconductor process chamber;

[0034] 110 - Cavity; 111 - Receiving cavity; 112 - Main body; 1121 - Through area; 1122 - Airflow area; 113 - First end cap; 114 - Second end cap;

[0035] 120 - Process tray; 121 - Annular part; 122 - Supporting part; 1221 - Perforation;

[0036] 130 - Base;

[0037] 140 - First blocking component; 141 - First arc surface; 142 - First rounded edge; 143 - First recessed gripping part; 144 - First hollowed-out area;

[0038] 150 - Second abutment; 151 - Second arc surface;

[0039] 161 - First air intake section; 162 - Second air intake section; 163 - First air replenishment line; 164 - Second air replenishment line;

[0040] 170 - Exhaust device;

[0041] 200-Drive;

[0042] 300-Wafer. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0044] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0045] Furthermore, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application specification may have been selected by the applicant at his or her own discretion, and their detailed meanings are explained in the relevant sections of this description.

[0046] Furthermore, this application is required to be understood not only through the actual terms used, but also through the meaning implied by each term.

[0047] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0048] This application provides a semiconductor process chamber. (See reference...) Figures 1 to 8 The semiconductor process chamber 100 provided in this application embodiment includes: a chamber 110, a process disk 120, a base 130, a first stop 140, and a second stop 150.

[0049] The cavity 110 has a receiving cavity 111. The process tray 120, the base 130, the first stop 140, and the second stop 150 are all disposed within the receiving cavity 111. The process tray 120 is sleeved on the base 130. The process tray 120 is sandwiched between the first stop 140 and the second stop 150.

[0050] In this manner, in the embodiments of this application, the process disk 120 is sandwiched between the first stop 140 and the second stop 150. Therefore, the first stop 140 and the second stop 150 can be used to prevent the process disk 120 from deviating from its position due to accidental sliding, thereby preventing the process disk 120 from scraping against the base 130 due to accidental sliding.

[0051] For example, the process tray 120 includes an annular portion 121, and according to process requirements, the base 130 can be disposed within the annular portion 121 of the process tray 120. In other words, the annular portion 121 of the process tray 120 is fitted over the base 130. During installation and debugging, the center of the annular portion 121 of the process tray 120 can be made to coincide substantially with the center of the base 130, thereby making it less likely for the rotating base 130 to rub against the annular portion 121 of the process tray 120.

[0052] In related technologies, such as during epitaxial growth processes within a semiconductor process chamber, deposits accumulate on the chamber walls. When these deposits reach a certain thickness, they come into contact with the outer surface of the annular portion of the process disk. As the deposits thicken further, the process disk slides, causing one side of the inner surface of the annular portion to approach the substrate. Consequently, during substrate rotation, the substrate may scrape against the inner surface of the annular portion, potentially generating particulate matter that contaminates the semiconductor process chamber.

[0053] However, by adopting the solution provided in the embodiments of this application, the process disk 120 can be clamped by the first stop 140 and the second stop 150, thereby providing a holding force to the process disk 120 and preventing the process disk 120 from shifting position.

[0054] In some embodiments, the lower surface of the first abutment 140 is a first friction-enhancing surface, and the lower surface of the second abutment 150 is a second friction-enhancing surface. The first friction-enhancing surface contacts the bottom wall of the accommodating cavity 111, and the second friction-enhancing surface contacts the bottom wall of the accommodating cavity 111.

[0055] It should be noted that since the first abutment 140 is supported on the bottom wall of the accommodating cavity 111 and the second abutment 150 is also supported on the bottom wall of the accommodating cavity 111, the friction between the first abutment 140 and the bottom wall of the accommodating cavity 111 can be increased by making the lower surface of the first abutment 140 a first friction-enhancing surface and the lower surface of the second abutment 150 a second friction-enhancing surface, thereby better preventing the process disk 120 from sliding.

[0056] In some embodiments, a first friction-enhancing zone may be provided at the portion of the bottom wall of the accommodating cavity 111 that contacts the lower surface of the first abutment 140, and a second friction-enhancing zone may be provided at the portion of the bottom wall of the accommodating cavity 111 that contacts the lower surface of the second abutment 150. This can further increase the friction between the first abutment 140 and the bottom wall of the accommodating cavity 111, and increase the friction between the second abutment 150 and the bottom wall of the accommodating cavity 111.

[0057] For example, by setting the lower surfaces of the first stop 140 and the second stop 150 to frosted surfaces, the roughness of the lower surfaces of the first stop 140 and the second stop 150 can be increased, thereby increasing the relative sliding friction when the lower surfaces of the first stop 140 and the second stop 150 come into contact with the bottom wall of the receiving cavity 111.

[0058] Similarly, the parts of the bottom wall of the accommodating cavity 111 that contact the lower surface of the first stop 140 and the parts of the bottom wall of the accommodating cavity 111 that contact the lower surface of the second stop 150 can also be frosted surfaces to further enhance the friction when the first stop 140 and the second stop 150 slide relative to the bottom wall of the accommodating cavity 111.

[0059] For example, the lower surface of the first stop 140 may be provided with a plurality of protrusions, and the lower surface of the second stop 150 may be provided with a plurality of protrusions, so as to increase the frictional force when the first stop 140 and the second stop 150 slide relative to the bottom wall of the receiving cavity 111 by providing protrusions on the lower surfaces of the two, so that the lower surface of the first stop 140 constitutes a first friction-enhancing surface, and the lower surface of the second stop 150 constitutes a second friction-enhancing surface.

[0060] Alternatively, in some embodiments, the lower surfaces of the first stop 140 and the second stop 150 may be coated with a friction material layer to increase the friction force when the first stop 140 and the second stop 150 slide relative to the bottom wall of the accommodating cavity 111.

[0061] Figure 3 This is a top view of the first abutment 140. Figure 4 This is a front view of the first abutment 140. Figure 5 This is a cross-sectional view of the first stop 140 along a section passing through the straight line BB. (Reference) Figures 3 to 5 In some embodiments, the first abutment 140 has a first arcuate surface 141 on the side facing the process disk 120. The first arcuate surface 141 is in contact with the outer surface of the process disk 120. (See reference) Figure 7 The second abutment 150 has a second arc surface 151 on the side facing the process disk 120, and the second arc surface 151 is in contact with the outer surface of the process disk 120.

[0062] In some embodiments, the lower surface of the first stop 140 facing the process disk 120 has a first arc edge 142, which fits against the outer surface of the process disk 120. The lower surface of the second stop 150 has a second arc edge facing the process disk 120, which fits against the outer surface of the process disk 120. This allows for the limiting of the upper and lower ends of the process disk 120, respectively.

[0063] In simpler terms, the above example can be understood as follows: the side of the first stop 140 facing the process disk 120 has a semi-circular structure, and the side of the second stop 150 facing the process disk 120 has a semi-circular structure. The two are joined together to form a circular enclosure area, within which the process disk 120 is located. The diameter of the circular enclosure area is approximately equal to the diameter of the process disk 120, so that the first stop 140 and the second stop 150 can clamp the process disk 120 to prevent it from sliding.

[0064] In some embodiments, the first blocking member 140 is a first hot wall, and the second blocking member 150 is a second hot wall. The first hot wall and the second hot wall are devices with heating functions. During the implementation of the semiconductor process, the first hot wall and the second hot wall can be used to heat the process gas in the accommodating cavity 111 so that the temperature of the process gas in the accommodating cavity 111 meets the process requirements.

[0065] In some embodiments, the upper surfaces of the process disk 120, the first stop 140, and the second stop 150 are flush. This makes the top surfaces of the three surfaces of the process disk 120, the first stop 140, and the second stop 150 relatively flat, and consequently, the flow field of the process gas is more stable as the process gas flows from one side of the accommodating cavity 111 to the other.

[0066] refer to Figure 1 In some embodiments, the cavity 110 includes a main body 112, a first end cap 113, and a second end cap 114. The main body 112 has a through-region 1121 that extends through the main body 112 along the length of the semiconductor process chamber 100. The first end cap 113 and the second end cap 114 respectively cover the two ends of the through-region 1121. Exemplarily, the main body 112 has a hollow tubular structure, and the hollow region of the main body 112 constitutes the through-region 1121. The first end cap 113 and the second end cap 114 respectively cover the two ends of the through-region 1121, and the main body 112, the first end cap 113, and the second end cap 114 form an accommodating cavity 111.

[0067] The first end cap 113, the first stop 140, the second stop 150, and the second end cap 114 are arranged sequentially along the length of the semiconductor process chamber 100. This allows the process disk 120 and the first stop 140 to be positioned in the through-area 1121 from one end of the main body 112, and the second stop 150 to be positioned in the through-area 1121 from the other end of the main body 112. Furthermore, the first end cap 113 and the second end cap 114 can be used to seal both ends of the main body 112.

[0068] refer to Figure 8 In some embodiments, the first end cap 113 is provided with at least three air inlets spaced apart along the width direction of the semiconductor process chamber 100. Combined with Figure 2 Each air intake faces the airflow zone 1122 between the top surface of the through area 1121 and the upper surface of the first stop member 140. The second end cover 114 is provided with an exhaust device 170, which is used to exhaust the gas in the airflow zone 1122.

[0069] The inlet is used to introduce a first process gas into the gas flow zone 1122, and the inlet is also used to introduce a second process gas into the gas flow zone 1122. Exemplarily, the first process gas is an epitaxial growth process gas, and the second process gas is an etching process gas. Specifically, when the semiconductor process chamber 100 is in an epitaxial growth state, the first process gas can be introduced into the gas flow zone 1122 via the inlet. When the semiconductor process chamber 100 is in an etching state, the second process gas can be introduced into the gas flow zone 1122 via the inlet.

[0070] Continue to refer to Figure 8 In some embodiments, the air inlets at both ends of each air inlet are designated as a first air inlet 161 and a second air inlet 162. The semiconductor process chamber 100 also includes a first gas supply line 163 and a second gas supply line 164. The first gas supply line 163 is connected to the first air inlet 161 and is used to supply a second process gas to the gas flow zone 1122 via the first air inlet 161. The second gas supply line 164 is connected to the second air inlet 162 and is used to supply a second process gas to the gas flow zone 1122 via the second air inlet 162. Exemplarily, the second process gas is hydrogen chloride (HCl) gas.

[0071] Thus, when the semiconductor process chamber 100 is in the etching state, the second process gas can be additionally supplied to the left side of the gas flow zone 1122 via the first gas supply pipe 163, thereby improving the etching and cleaning effect on the left side of the chamber wall. Furthermore, the second process gas can be additionally supplied to the right side of the gas flow zone 1122 via the second gas inlet 162, thereby improving the etching and cleaning effect on the right side of the chamber wall. Here, the terms "left side of the chamber wall" and "right side of the chamber wall" are based on... Figure 8 The semiconductor process chamber 100 shown faces the left end of the semiconductor process chamber 100. The cavity wall on the left is the left cavity wall, and the cavity wall on the right is the right cavity wall.

[0072] In some embodiments, the second end cap 114 is provided with at least three exhaust sections spaced apart along the width direction of the semiconductor process chamber 100. The exhaust sections are positioned opposite to the air inlets along the length direction of the semiconductor process chamber 100. Each exhaust section is connected to an exhaust device 170.

[0073] refer to Figure 6In some embodiments, the first abutment 140 has a first recessed gripping portion 143 on its side facing the first end cap 113. Figure 6 For example, a first recessed gripping portion 143 is provided on the left side of the first abutment 140. Exemplarily, the first recessed gripping portion 143 consists of two grooves formed on the side of the first abutment 140 facing the first end cap 113. In this way, when it is necessary to remove the first abutment 140, a finger can be inserted into the groove to grasp the first abutment 140 and move the first abutment 140 out of the through area 1121 of the main body 112.

[0074] The second stop 150 has a second recessed gripping portion on its side facing the second end cap 114. Similar to the arrangement of the first recessed gripping portion 143, the second stop 150 has a second recessed gripping portion on its right side. Exemplarily, the second recessed gripping portion consists of two grooves formed on the side of the second stop 150 facing the second end cap 114. Thus, when it is necessary to remove the second stop 150, one can insert a finger into the groove to grasp the second stop 150 and move the second stop 150 out of the through area 1121 of the main body 112.

[0075] refer to Figures 3 to 5 In some embodiments, the first stop 140 has a first hollow area 144 located between its top and bottom surfaces. This reduces the weight of the first stop 140, making it easier to place and remove. Similarly, the second stop 150 has a second hollow area located between its top and bottom surfaces. This also reduces the weight of the second stop 150, making it easier to place and remove.

[0076] This application provides a semiconductor process apparatus. (See reference...) Figure 1 , Figure 2 and Figure 8 The semiconductor process apparatus 1 provided in this application embodiment includes: a driver 200 and any of the semiconductor process chambers 100 provided in this application embodiment. The driver 200 is used to drive the base 130 to move.

[0077] In some embodiments, the process disk 120 includes a support portion 122, a base 130 located above the support portion 122, the support portion 122 is provided with a through hole 1221, and the base 130 is provided with a rotating docking portion at the part opposite to the through hole 1221, and the driver 200 is used to drive the connection with the rotating docking portion.

[0078] In embodiments of this application, the wafer 300 can be placed in the receiving cavity 111 of the semiconductor process chamber 100 via the wafer transfer port, and the wafer 300 can be placed on the base 130. For example, combined with Figure 8 In the case of a multi-wafer silicon epitaxy equipment for chemical vapor deposition (CVD), multiple wafers 300 can be set on the base 130.

[0079] Furthermore, the driver 200 can be used to lift the base 130, so that the bottom surface of the base 130 is separated from the top surface of the support portion 122. Furthermore, the driver 200 can be used to drive the base 130 to rotate, thereby driving the wafer 300 to rotate.

[0080] It should be noted that when the semiconductor process equipment 1 is in operation, the driver 200 lifts the base 130, and in this state, the upper surface of the base 130 is substantially flush with the upper surface of the process disk 120. Furthermore, the upper surfaces of the process disk 120, the first stop 140, and the second stop 150 are flush. It should also be noted that because the wafer 300 is relatively thin, the effect of the wafer 300 supported on the upper surface of the base 130 on the flow field of the process gas within the semiconductor process chamber 100 is negligible.

[0081] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0082] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the embodiments of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process chamber, characterized in that, include: Cavity (110), process plate (120), base (130), first stop (140) and second stop (150); The cavity (110) is provided with a receiving cavity (111). The process disk (120), the base (130), the first stop (140) and the second stop (150) are all disposed in the receiving cavity (111). The process disk (120) is sleeved on the base (130) and sandwiched between the first stop (140) and the second stop (150).

2. The semiconductor process chamber according to claim 1, characterized in that, The lower surface of the first abutment (140) is a first friction-enhancing surface, and the lower surface of the second abutment (150) is a second friction-enhancing surface. The first friction-enhancing surface is in contact with the bottom wall of the accommodating cavity (111), and the second friction-enhancing surface is in contact with the bottom wall of the accommodating cavity (111).

3. The semiconductor process chamber according to claim 1, characterized in that, The first abutment (140) has a first arc surface (141) on the side facing the process disk (120), and the first arc surface (141) is in contact with the outer surface of the process disk (120); the second abutment (150) has a second arc surface (151) on the side facing the process disk (120), and the second arc surface (151) is in contact with the outer surface of the process disk (120).

4. The semiconductor process chamber according to claim 1, characterized in that, The lower surface of the first abutment (140) facing the process disk (120) has a first arc edge (142), which is in contact with the outer surface of the process disk (120); the lower surface of the second abutment (150) facing the process disk (120) has a second arc edge, which is in contact with the outer surface of the process disk (120).

5. The semiconductor process chamber according to claim 1, characterized in that, The first blocking member (140) is a first hot wall, and the second blocking member (150) is a second hot wall; The upper surface of the process disk (120), the upper surface of the first stop (140), and the upper surface of the second stop (150) are flush.

6. The semiconductor process chamber according to claim 1, characterized in that, The cavity (110) includes a main body (112), a first end cap (113), and a second end cap (114); the main body (112) has a through area (1121), the through area (1121) penetrates the main body (112) along the length direction of the semiconductor process cavity, the first end cap (113) and the second end cap (114) respectively cover the two ends of the through area (1121), the first end cap (113), the first stop (140), the second stop (150) and the second end cap (114) are arranged sequentially along the length direction.

7. The semiconductor process chamber according to claim 6, characterized in that, The first end cap (113) is provided with at least three air inlets spaced apart along the width direction of the semiconductor process chamber. Each air inlet faces the airflow zone (1122) between the top surface of the through area (1121) and the upper surface of the first stop (140). The second end cap (114) is provided with an exhaust device (170) for discharging the gas from the airflow zone (1122). The air intake is used to input a first process gas into the airflow zone (1122), and the air intake is also used to input a second process gas into the airflow zone (1122).

8. The semiconductor process chamber according to claim 7, characterized in that, The air intakes at both ends of each of the aforementioned air intakes are respectively the first air intake (161) and the second air intake (162), and the semiconductor process chamber further includes a first gas supply line (163) and a second gas supply line (164). The first gas supply line (163) is connected to the first gas inlet (161), and the first gas supply line (163) is used to supply the second process gas into the gas flow zone (1122) through the first gas inlet (161); The second gas supply line (164) is connected to the second air inlet (162), and the second gas supply line (164) is used to supply the second process gas into the gas flow zone (1122) via the second air inlet (162).

9. The semiconductor process chamber according to claim 6, characterized in that, The first abutment (140) has a first recessed gripping portion (143) on the side facing the first end cap (113), and the second abutment (150) has a second recessed gripping portion on the side facing the second end cap (114).

10. A semiconductor process apparatus, characterized in that, include: The driver (200) and the semiconductor process chamber according to any one of claims 1 to 9; The driver (200) is used to drive the base (130) to move.

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