Integrated high-power LED light source
By employing a parallel connection of LED chips with a specific wavelength and a boss design in the LED light source, the problem of low power in existing simulated sunlight LED light sources has been solved, achieving high power and wide applicability, meeting the blue light exemption standard, and suitable for fields such as health lighting, plant lighting, and medical lighting.
Patent Information
- Application Number
- CN202520371507.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2024-05-24
- Filing Date
- 2025-03-04
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2035-03-04
AI Technical Summary
Existing LED light sources for simulating sunlight have low power and limited applicability in various occasions and fields.
A circuit with 28 series and 12 parallel series-parallel configurations is used to arrange 336 LED chips, including a first LED chip with a peak wavelength of 410-415nm, a second LED chip with a main wavelength of 440-445nm, a third LED chip with a main wavelength of 450-455nm, a fourth LED chip with a main wavelength of 465-470nm, and a fifth LED chip with a main wavelength of 475-485nm. A boss is provided to position the fifth LED chip at a higher position, and it is coated with phosphor adhesive.
It achieves high-power LED light source with a wide spectral range, is applicable to a wide range of occasions, meets the blue light exemption standard, improves the light intake perception and human eye concentration, and is suitable for health lighting, plant lighting, medical lighting and other fields.
Smart Images
Figure CN223844182U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of LED technology, and in particular to an integrated high-power LED light source. Background Technology
[0002] While existing LED lighting technologies include LED light sources that simulate sunlight, they are not widely used. The main problem with these simulated sunlight LED light sources is their low power, which limits their applicability and the scope of their applications. Utility Model Content
[0003] This invention mainly addresses the technical problems of existing LED light sources that simulate sunlight, such as a small spectral range, narrow applicable occasions, and limited application areas.
[0004] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: an integrated high-power LED light source, including a bracket and 336 LED chips disposed on the bracket, wherein the 336 LED chips are arranged in a circuit of 28 series and 12 parallel series-parallel connection, and the bracket is coated with fluorescent adhesive covering each of the LED chips.
[0005] The 336 LED chips include a first LED chip with a peak wavelength of 410-415nm, a second LED chip with a main wavelength of 440-445nm, a third LED chip with a main wavelength of 450-455nm, a fourth LED chip with a main wavelength of 465-470nm, and a fifth LED chip with a main wavelength of 475-485nm.
[0006] The ratio of the number of the first LED chip, the second LED chip, the third LED chip, the fourth LED chip, and the fifth LED chip is 2:8:8:8:2;
[0007] The support includes a copper substrate with a boss on it. The fifth LED chip is disposed on the boss, and the first, second, third, and fourth LED chips are all disposed on the substrate at positions offset from the boss.
[0008] Optionally, the chip area ratio of the first LED chip, the second LED chip, the third LED chip, the fourth LED chip, and the fifth LED chip is (0.8-1):(0.8-1):(0.8-1):(0.8-1):(0.3-0.5).
[0009] Optionally, the thickness of the substrate is 1.4 to 1.6 mm.
[0010] Optionally, the height of the boss is 0.08 to 0.12 mm.
[0011] Compared with existing technologies, the integrated high-power LED light source of this invention has the following advantages: By setting protrusions on the substrate, a fifth LED chip with a main wavelength of 475-485nm is placed on it through die bonding. This facilitates closer contact of light with the eyes, improves the perceived light intake, increases the M / Pratio (non-visual luminance ratio) of the product, and thus improves the concentration of the human eye. Furthermore, the LED light source structure has high power; a single light source structure is suitable for applications requiring high brightness, eliminating the need for multiple light sources combined, and the power can reach 100W. Attached Figure Description
[0012] Figure 1 This is a cross-sectional view of the integrated high-power LED light source of this utility model.
[0013] Figure 2 yes Figure 1 A magnified view of the local structure at point A in the middle.
[0014] Figure 3 This is a simulation diagram of the integrated high-power LED light source of this utility model.
[0015] Figure 4 This is a spectral diagram of the integrated high-power LED light source according to an embodiment of this utility model.
[0016] Figure 5 The figure shows the spectral similarity calculation of the integrated high-power LED light source in this embodiment of the utility model [SSI(380-780nm)>89].
[0017] Figure 6 The blue light hazard efficiency K of the integrated high-power LED light source according to this utility model embodiment is... B，V Comparison chart.
[0018] Figure 7 This is a diagram of the Television Illumination Index (TLCI-2012) of the integrated high-power LED light source according to an embodiment of this utility model.
[0019] Figure 8 This is a test report diagram of the integrated high-power LED light source according to an embodiment of this utility model.
[0020] Figure 9 This is a bin diagram of the integrated high-power LED light source according to an embodiment of the present invention.
[0021] Figure 10 This is a diagram showing the calculation results of the medical aesthetic parameters of the integrated high-power LED light source according to an embodiment of this utility model.
[0022] Figure label:
[0023] 1-First LED chip 2-Second LED chip 3-Third LED chip
[0024] 4-Fourth LED chip 5-Fifth LED chip 6-Sixth LED chip
[0025] 7-Substrate; 8-Fluorescent adhesive; 9-Protrusion. Detailed Implementation
[0026] The following is in conjunction with the appendix Figures 1-10 The technical solution of this utility model will be further described in detail below. It should be understood that these embodiments are only used to illustrate this utility model and are not intended to limit the scope of this utility model. Although this specification describes the embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the various embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
[0027] like Figures 1-3 As shown in the figure, an integrated high-power LED light source provided by this utility model includes a bracket and 336 LED chips disposed on the bracket. The 336 LED chips are arranged in a circuit with 28 series and 12 parallel series-parallel configuration. The bracket is coated with fluorescent adhesive 8 covering each LED chip.
[0028] The 336 LED chips include a first LED chip 1 with a peak wavelength of 410-415nm, a second LED chip 2 with a main wavelength of 440-445nm, a third LED chip 3 with a main wavelength of 450-455nm, a fourth LED chip 4 with a main wavelength of 465-470nm, and a fifth LED chip 5 with a main wavelength of 475-485nm. (See...) Figure 3 In the circuit, the black chip is the first LED chip 1, the pink chip is the second LED chip 2, the blue chip is the third LED chip 3, the green chip is the fourth LED chip 4, and the yellow chip is the fifth LED chip 5. A total of 336 LED chips (including the first LED chip 1, the second LED chip 2, the third LED chip 3, the fourth LED chip 4, and the fifth LED chip 5) are arranged in a 28-series-12-parallel series-parallel configuration.
[0029] like Figures 1-2As shown, the support includes a substrate 7, preferably a 3835 Sanyi 1.5T nickel-palladium-gold plated C0B flip-chip copper substrate 7SY / LDR-PC3835U-A0. The first LED chip 1 is preferably a Sanan 22*35mil2 dual-electrode violet LED chip. The second LED chip 2, third LED chip 3, and fourth LED chip 4 are all preferably Jucan 22*35mil2 dual-electrode blue LED chips. The fifth LED chip 5 is preferably a Sanan 22*35mil2 dual-electrode blue LED chip.
[0030] like Figures 1-2 As shown, a boss 9 is provided on the substrate 7. The boss 9 has a certain height. The fifth LED chip 5 is disposed on the boss 9 at a relatively high height, which is higher than the horizontal plane of the first LED chip 1, the second LED chip 2, the third LED chip 3, and the fourth LED chip 4.
[0031] In this embodiment, by setting protrusions 9 on the substrate 7, the fifth LED chip 5 with a main wavelength of 475-485nm is placed on it via die bonding. This facilitates closer contact of light with the eyes, increases the perceived light intake, and increases the M / Pratio (non-visual luminance ratio) of the product, thereby improving the concentration of the human eye. Furthermore, the LED light source structure of this embodiment has high power; a single light source structure is suitable for applications requiring high brightness, eliminating the need for multiple light sources combined, and the power can reach 100W.
[0032] The height of the boss 9 is between 0.08 and 0.12 mm. Preferably, the height of the boss 9 is 0.1 mm. This allows light to be close to the eye while also improving the reliability of the soldering wires and achieving optimal design.
[0033] The thickness of the substrate 7 is between 1.4 and 1.6 mm. Preferably, the thickness of the substrate 7 is 1.5 mm.
[0034] Furthermore, the ratio of the number of the first LED chip 1, the second LED chip 2, the third LED chip 3, the fourth LED chip 4, and the fifth LED chip 5 is 2:8:8:8:2.
[0035] See Figure 4 It can be seen that the spectral characteristics of the integrated high-power LED light source in this embodiment of the present invention are as follows:
[0036] 1. The spectral height of 1.380-500nm is <0.8, and low blue light is beneficial for eye relaxation;
[0037] 2.0.55 < 500-680nm height < 0.65, smooth spectrum, better visual effect, close to the spectrum of equal-energy white light, the lower the color purity, the closer it is to white light;
[0038] 3.680-780nm height >0.6, rich in infrared components, which helps protect the eyes and activates the conversion of large eye molecules into small water molecules, which is beneficial for moisturizing and protecting the eyes;
[0039] 4. The 680-780nm spectrum has small peaks with peak wavelengths between 680-740nm, which provides micro-infrared light stimulation, making eyes healthier.
[0040] See Figure 5 The integrated high-power LED light source of this utility model embodiment has high spectral similarity and 100% reproduction of natural colors.
[0041] See Figure 6 The integrated high-power LED light source of this utility model embodiment has a blue light hazard efficiency K0. B，V =0.000693017, the blue light hazard efficiency K of sunlight with the same color temperature. B，V It is low, meets the blue light exemption RG0 standard, and also meets the requirements for photobiological exemption level.
[0042] Its blue light hazard efficiency K B，V The blue light hazard efficiency (K) compared to sunlight of the same color temperature B，V Low light emission, meeting the RG0 blue light exemption standard. The integrated high-power LED light source of this invention achieves a wide simulated solar spectrum range, making it suitable for a wide range of applications and fields. For example, it can be used as a resting light source for health lighting, a light source for photobiological regulation, plant lighting, a working light source for health lighting, and a medical lighting source.
[0043] In combination Figure 10 As shown, the integrated high-power LED light source for photobiological regulation in this embodiment, when used as a medical aesthetic light source, has an activation energy ratio of >30% for cytochrome C oxidase activity and an effective light radiation ratio of >48% for biological tissue penetration >2.5mm, which is beneficial for activating tissue cells.
[0044] In this embodiment, the chip area ratio of the first LED chip 1, the second LED chip 2, the third LED chip 3, the fourth LED chip 4, and the fifth LED chip 5 is (0.8-1):(0.8-1):
[0045] (0.8-1):(0.8-1):(0.3-0.5). For example, the chip area ratio of the first LED chip 1, the second LED chip 2, the third LED chip 3, the fourth LED chip 4, and the fifth LED chip 5 can be 0.8:0.8:0.8:0.8:0.3 or 1:1:1:1:0.5 or 0.9:0.9:0.9:0.9:0.4.
[0046] It should be noted that the blue light hazard efficiency K can be used. B，V To perform the calculation, namely the blue light hazard weighted radiance L B The ratio of the photometric value to the corresponding photometric value is calculated using the following formula:
[0047]
[0048] Among them, K m =683 lm / W, V(λ) is the spectral luminous efficiency (or visibility function), and B(λ) is the blue light hazard weighting function. K B，V K represents the relative amount of blue light component in visible radiation. Under the condition of the same brightness in lighting products, K... B，V The higher the light source, the greater the potential for damage to the retina.
[0049] The following are examples of integrated high-power LED light sources formed by configuring fluorescent adhesive 8 with different compositions.
[0050] In this embodiment, the fluorescent adhesive 8 is made of 5000K fluorescent adhesive solution. The mass ratio of the components of the 5000K fluorescent adhesive solution is: adhesive: blue powder with emission peak wavelength of 450-470nm: blue powder with emission peak wavelength of 490-500nm: green powder with emission peak wavelength of 535-545nm: red powder with emission peak wavelength of 630-640nm: infrared powder with emission peak wavelength of 725-735nm = 22:(1.3-1.8):(0.2-0.3):(3.4-3.9):(0.18-0.26):(2.8-3.3). Specifically, the mass ratio of the following components can be 22:1.3:0.2:3.4:0.18:2.8, or 22:1.8:0.3:3.9:0.26:3.3, or 22:1.5:0.25:3.7:0.2:3.
[0051] The spectral composition analysis data of the integrated high-power LED light source in this embodiment are shown in Table 1 below:
[0052]
[0053] As shown in Table 1 above, the integrated high-power LED light source in this embodiment has a blue light content that is 23.7% lower than that of sunlight at 5000K, thus providing an eye-protecting effect; and an infrared light content that is 43.8% higher than that of sunlight, which helps cells absorb infrared light.
[0054] The comparison of the test data of the spectral chromaticity parameters of the integrated high-power LED light source in this embodiment with the spectral chromaticity parameters of 5000K sunlight is shown in Table 2 below:
[0055]
[0056] As shown in Table 2 above, the integrated high-power LED light source in this embodiment has high color quality: 1. Color rendering index Ra>97, R1-R15>95; 2. Color quality index CQS>97; 3. Color tolerance sdcm<3; 4. TM-30-18, Rg>98, Rf>97, Rf,skin>97; 5. COI (acid-glycosylation index).
[0057] <3.3; 6. Television Lighting Index (TLCI-2012) >99.
[0058] The key parameters of the integrated high-power LED light source in this embodiment are compared in Table 3 below:
[0059]
[0060] As shown in Table 3 above, the integrated high-power LED light source in this embodiment has a light-to-dark ratio (S / P ratio) that is essentially the same as that of sunlight at the same color temperature of 5000K, which helps relax the eyes and creates a comfortable and healthy light environment. The light intensity ratio (M / Pratio) is also essentially the same as that of sunlight at the same color temperature of 5000K. The blue light intensity is lower than that of sunlight, preventing blue light damage. When used as a light source for plants, the crop utilization rate is about 2% higher than that of sunlight at the same color temperature, which is beneficial to plant growth and development.
[0061] The green phosphors involved in the above embodiments with emission wavelengths of 450-470nm are composed of nitrogen oxides and have a half-width of 50-65nm; the green phosphors with emission wavelengths of 490-500nm are composed of nitrogen oxides and have a half-width of 60-80nm; and the green phosphors with emission wavelengths of 535-545nm are Lu3Al5O. 12 :Ce 3+ The composition is as follows: Red phosphor with a half-width of 95-105nm and an emission wavelength of 635-645nm is CaAlSiN3:Eu, with a half-width of 60-80nm (to improve product brightness); Infrared phosphor with an emission wavelength of 725-735nm is Ga4GeO8:Cr. 3+ The composition has a half-width of 130-160nm.
[0062] The standard elliptic parameters of the integrated high-power LED light source in Embodiments 1 to 8 above are shown in Table 4 below:
[0063]
[0064] This utility model embodiment also provides a method for preparing the integrated high-power LED light source of the above embodiments, including the following steps:
[0065] S001: Import the coordinates of the first LED chip 1, the second LED chip 2, the third LED chip 3, the fourth LED chip 4, and the fifth LED chip 5 into the die bonder program, and fix each LED chip to the bracket with die bonder adhesive;
[0066] S002: Place the solidified material in an oven and bake it at 160±5℃ for 2h±10min.
[0067] S003: Wire bond each LED chip in a 28-series-12-parallel series-parallel configuration;
[0068] S004: After completing the wire bonding of the LED chip, light it with a DC power supply with a low current (VF=64V, IF=10mA) and dehumidify it under the conditions of 130±5℃ / 2h±10min;
[0069] S005: Prepare the fluorescent adhesive solution and centrifuge the fluorescent adhesive solution to remove bubbles using a centrifuge degasser;
[0070] S006: Dispense fluorescent adhesive solution according to the color points and color parameters required by the design;
[0071] S007: After dispensing, bake at low temperature at 45±5℃ / 3h±10min to precipitate the phosphor formed by the fluorescent adhesive solution, thereby improving binning efficiency and luminous flux.
[0072] S008: After phosphor precipitation is completed, high-temperature baking is carried out at 160±5℃ / 6h±10min.
[0073] S009: After high-temperature baking is completed, spectral analysis is performed according to the given chromaticity coordinates and light color parameters;
[0074] S010: After completing the spectral separation, use a high-temperature microcurrent (VF=64V, IF=10mA) at 100±5℃ to light up the product and determine whether there are any electrical defects.
[0075] S011: Label and put good products into the warehouse.
[0076] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
Claims
1. An integrated high-power LED light source, characterized in that, The device includes a support and 336 LED chips disposed on the support. The 336 LED chips are arranged in a circuit with 28 series and 12 parallel series-parallel configurations. The support is coated with phosphor covering each of the LED chips. The 336 LED chips include a first LED chip with a peak wavelength of 410-415nm, a second LED chip with a main wavelength of 440-445nm, a third LED chip with a main wavelength of 450-455nm, a fourth LED chip with a main wavelength of 465-470nm, and a fifth LED chip with a main wavelength of 475-485nm. The ratio of the number of the first LED chip, the second LED chip, the third LED chip, the fourth LED chip, and the fifth LED chip is 2:8:8:8:2; The support includes a copper substrate with a boss on it. The fifth LED chip is disposed on the boss, and the first, second, third, and fourth LED chips are all disposed on the substrate at positions offset from the boss.
2. The integrated high-power LED light source according to claim 1, characterized in that, The chip area ratio of the first LED chip, the second LED chip, the third LED chip, the fourth LED chip, and the fifth LED chip is (0.8-1):(0.8-1):(0.8-1):(0.8-1):(0.3-0.5).
3. The integrated high-power LED light source according to claim 1, characterized in that, The thickness of the substrate is 1.4 to 1.6 mm.
4. The integrated high-power LED light source according to claim 1, characterized in that, The height of the boss is 0.08 to 0.12 mm.