Heating cavity and deposition equipment

Abstract

The utility model discloses a heating cavity and deposition equipment, the interior of the heating cavity comprises an upper heater, a wafer heater and a lower heater which are arranged at intervals in the vertical direction, and the wafer heater is arranged close to a wafer and is arranged between the upper heater and the lower heater; the upper heater at least comprises a first heating part and a second heating part which are independently arranged, the first heating part is arranged right above the wafer heater, the second heating part is arranged opposite to the first heating part, and the top area of the heating cavity is filled with the second heating part and the first heating part. On the basis of a plurality of groups of heaters, the upper heater is completely filled to cover the top area of the heating cavity and heat most area of the top of the heating cavity, and meanwhile, the upper heater is divided into at least two independent heating parts so as to independently adjust different areas of the top of the reaction area; and the uniformity of the thermal field above the reaction area is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor production equipment, in particular to a heating cavity and a deposition equipment. BACKGROUND

[0002] Cross flow atomic layer deposition equipment (Cross Flow ALD equipment) is a kind of equipment for thin film deposition, which realizes high-quality thin film deposition by precisely controlling gas flow state and reaction conditions. In the current deposition equipment, three-stage heating structure is usually arranged in the reaction cavity along the vertical direction to improve the uniformity of the thermal field in the deposition process. However, as the uniformity requirement of the film product is getting higher and higher, the heating structure of the upper and lower armored heaters has been difficult to meet the uniformity requirement of the inner cavity temperature, especially there is a greater temperature difference in the middle and peripheral regions of the inner cavity in the horizontal direction, which affects the finished product quality of the film product.

[0003] Therefore, how to improve the uniformity of the thermal field in the deposition process to improve the uniformity of the film product thickness is a technical problem to be solved by those skilled in the art. CONTENT OF THE INVENTION

[0004] Therefore, the purpose of the present application is to provide a heating cavity to improve the uniformity of the thermal field in the deposition process and the uniformity of the film product thickness.

[0005] Another purpose of the present application is to provide a deposition equipment comprising the above-mentioned heating cavity.

[0006] To achieve the above-mentioned purpose, the present application provides the following technical solution:

[0007] A heating cavity, which comprises an upper heater, a wafer heater and a lower heater arranged in a vertical direction, the wafer heater is arranged close to the wafer and between the upper heater and the lower heater;

[0008] The upper heater comprises at least a first heating part and a second heating part arranged independently, the first heating part is arranged directly above the wafer heater, and the second heating part is arranged opposite to the first heating part and fills the top region of the heating cavity with the first heating part. Preferably, in the above-mentioned heating cavity, the inside of the heating cavity comprises a reaction zone, the reaction zone comprises a wafer carrier, an inlet gas spray plate and an inner cavity region, the wafer carrier is arranged inside the inner cavity region, the reaction gas passes through the wafer carrier through the inlet gas spray plate and the guidance of the inner cavity region, and is discharged from the heating cavity through the exhaust pipeline; the wafer heater is arranged close to the bottom of the wafer carrier.

[0009] Preferably, in the heating cavity, the upper heater further comprises a third heating part independently arranged on the two sides of the first heating part opposite to the second heating part; the heating cavity further comprises a first temperature sensor, a second temperature sensor and a third temperature sensor arranged along the air inlet, the middle region and the tail of the air inlet spray plate respectively, the first temperature sensor is in communication connection with the controller of the second heating part close to the air inlet, the second temperature sensor is in communication connection with the controller of the first heating part, and the third temperature sensor is in communication connection with the controller of the third heating part close to the tail of the air inlet spray plate.

[0010] Preferably, in the heating cavity, the lower heater comprises a fourth heating part and a fifth heating part arranged concentrically in a ring structure, and the fourth heating part and the fifth heating part are independently arranged.

[0011] Preferably, in the heating cavity, the radius of the fourth heating part is smaller than that of the fifth heating part and is arranged close to the wafer carrier, and the heating wire arrangement of the fifth heating part fills the corner area of the heating cavity.

[0012] Preferably, in the heating cavity, a fourth temperature sensor and a fifth temperature sensor are further included, the fourth temperature sensor is arranged close to the wafer carrier and is in communication connection with the controller of the fourth heating part, and the fifth temperature sensor is arranged close to the exhaust pipeline and is in communication connection with the controller of the fifth heating part.

[0013] Preferably, in the heating cavity, the arrangement density of the heating wire of the second heating part is greater than that of the first heating part.

[0014] Preferably, in the heating cavity, a mirror surface reflecting plate is arranged inside the heating cavity, the mirror surface reflecting plate is arranged in contact with the wall surface of the heating cavity and surrounds the upper heater, the wafer heater and the lower heater.

[0015] Preferably, in the heating cavity, the heating wire of the first heating part and the second heating part is arranged in a rectangular structure.

[0016] A deposition device comprising the heating cavity of any one of the above.

[0017] From the above technical solution can be seen, the heating cavity provided by the application, its inside includes three levels of heating structure of upper heater, wafer heater and lower heater which are arranged in vertical direction, wherein the wafer heater is arranged close to the wafer to directly heat the generation area of the film product; and the upper heater and the lower heater are arranged on both sides of the wafer heater to heat the peripheral area of the generation area of the film product in the heating cavity, and in order to further optimize the uniformity of the thermal field in the heating cavity on the basis of the three levels of heating structure, the upper heater at least includes independently arranged first heating part and second heating part, which can be independently opened and closed or the running power is adjusted, and the first heating part is arranged vertically above the wafer heater to ensure the heating effect of the generation area of the film product, and the second heating part is arranged relative to the first heating part, and the second heating part cooperates with the first heating part to fill the top area of the heating cavity, and the second heating part is used to assist heating from the peripheral position to maintain the temperature uniformity in the heating cavity, according to different application conditions, the operator can open and close or adjust the running power of any area in the first heating part and the second heating part to balance the thermal field uniformity of the area vertically above the reaction zone in the heating cavity, and then improve the uniformity of the film product in the generation process in the reaction zone. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0019] Figure 1 The cross-sectional structure schematic diagram of the heating cavity provided by the present disclosure is shown in the figure.

[0020] Figure 2 The assembly schematic diagram of the heating cavity is shown in the figure.

[0021] Figure 3 The detailed structure schematic diagram of the peripheral area of the reaction zone in the figure is shown in the figure. Figure 2

[0022] Figure 4 The structure schematic diagram of the lower heater in the figure is shown in the figure. Figure 2 Wherein:

[0023]

[0024] 110-cavity wall; 120-cavity cover; 20-reaction zone;

[0025] ​​210 - Wafer carrier; 220 - Air inlet spray plate; 230 - Inner cavity area; 2310 - Upper substrate of inner cavity; 2320 - Lower substrate of inner cavity; 240 - Exhaust pipe;

[0026] 30 - Upper heater; 310 - First heating section; 320 - Second heating section; 330 - Third heating section;

[0027] 40 - Wafer heater;

[0028] 50 - Lower heater; 510 - Fourth heating section; 520 - Fifth heating section;

[0029] 610 - First temperature sensor; 620 - Second temperature sensor; 630 - Third temperature sensor; 640 - Fourth temperature sensor; 650 - Fifth temperature sensor;

[0030] 70 - Mirror reflector. Detailed Implementation

[0031] The core of this application is to disclose a heating chamber to improve the uniformity of the thermal field during the deposition process and the uniformity of the film thickness.

[0032] Another objective of this application is to provide a deposition apparatus comprising the aforementioned heating chamber.

[0033] To enable those skilled in the art to better understand the present application, embodiments of the present application will be described below with reference to the accompanying drawings. Furthermore, the embodiments shown below do not limit the scope of the utility model described in the claims. Additionally, the complete content of the structures represented in the following embodiments is not limited to those necessary for the solution of the utility model described in the claims.

[0034] like Figure 1 and Figure 2 As shown, this utility model provides a heating cavity, which has a reaction zone 20 for accommodating wafers or other substrates to be processed and for depositing film products, as well as an upper heater 30, a wafer heater 40 and a lower heater 50 arranged at intervals. The layered heater layout enables combined heating of different areas within the heating cavity, and optimizes the temperature uniformity within the heating cavity by increasing the heating layers.

[0035] Specifically, the wafer heater 40 is positioned close to the wafer to directly heat the area where the film is formed. Typically, the wafer heater 40 is directly attached to the wafer carrier 210 to provide stable and uniform heat, ensuring consistent temperature across the wafer surface. The upper heater 30 and lower heater 50 are vertically positioned on either side of the wafer heater 40, spaced apart from it. This arrangement prevents excessive heat concentration on the wafer heater 40 and provides auxiliary heating to other areas of the heating cavity, resulting in a more uniform thermal field throughout the entire heating cavity.

[0036] Specifically, in the heating cavity provided in this embodiment of the present invention, the upper heater 30 includes at least a first heating part 310 and a second heating part 320. The first heating part 310 and the second heating part 320 cooperate to fill the top area of ​​the heating cavity, thereby ensuring the heating range of the upper heater 30. Here, the upper heater 30 filling the heating cavity specifically means that the heating wire of the upper heater 30 covers the top wall surface of the heating cavity in the vertical direction, so as to heat the entire area of ​​the heating cavity in the vertical direction. At the same time, the independently set first heating part 310 and second heating part 320 specifically mean that the heating wires of the first heating part 310 and the second heating part 320 located in the heating cavity are not connected, while the control device located outside the heating cavity can be independently turned on or off or the operating power can be adjusted.

[0037] Furthermore, in the specific structure of the upper heater 30, the first heating part 310 is disposed directly above the wafer heater 40 in the vertical direction, mainly responsible for heating the central area above the wafer heater 40. The second heating part 320 is located in the peripheral area of ​​the top of the heating cavity, so as to heat other areas of the heating cavity.

[0038] It should be noted that the heating cavity provided in this embodiment of the present invention is generally composed of a cavity wall 110 with an opening on one side and a cavity cover 120 that can seal the cavity wall 110. The internal equipment of the cavity wall 110 can be easily replaced and the position of the heater can be adjusted by opening the cavity cover 120.

[0039] Furthermore, in some embodiments of this utility model, a reaction zone 20 is provided inside the heating cavity for the generation of film products. Specifically, the reaction zone 20 mainly includes a wafer carrier 210, an air inlet spray plate 220, and an inner cavity region 230. The inner cavity region 230 is a cavity structure formed by fastening an upper inner cavity substrate 2310 and a lower inner cavity substrate 2320. The wafer carrier 210 is located inside the inner cavity region 230 to support the wafer to be processed. The air inlet spray plate 220 is used to receive the reaction gas and spray the reaction gas evenly onto the wafer surface to ensure that the reaction gas can fully contact the wafer and react. The air intake spray plate 220 and the inner cavity area 230 form a guiding air passage, so that the reaction gas enters the inner cavity area 230 through the air intake spray plate 220 and flows evenly across the surface of the wafer carrier disk 210 under the guidance of the air flow passage to achieve deposition. After deposition, the gas is discharged from the heating cavity through the exhaust pipe 240 to complete the circulation of the reaction gas.

[0040] As described in the aforementioned embodiments, the wafer heater 40 is one of the key structures of this invention. It is positioned flush with the bottom of the wafer carrier 210, allowing the wafer heater 40 to directly heat the wafer carrier 210, thereby achieving precise temperature control of the wafer reaction region 20. The heat from the wafer heater 40 is transferred to the wafer carrier 210 via thermal conduction, thus uniformly heating the wafer surface. This direct heating method not only improves heating efficiency but also reduces heat loss during the transfer process, preventing the reaction region 20 from becoming too cold and failing to deposit.

[0041] To further improve the temperature uniformity within the heating chamber, in some embodiments of this invention, the upper heater 30 further includes an independently configured third heating section 330. The third heating section 330 and the second heating section 320 are disposed on opposite sides of the first heating section 310, and preferably, the first heating section 310, the second heating section 320, and the third heating section 330 are disposed at the same horizontal height in the vertical direction. Based on the above structure, the upper heater 30 can independently control the temperature of different positions within the heating chamber according to different process requirements, thereby achieving a more precise heating effect. For example, at the start of deposition, the first heating section 310 can be started in advance or run at a higher power to quickly raise the temperature of the reaction zone 20 to reach the temperature required for the deposition process. During the deposition process, the operating power of the first heating section 310 can be appropriately reduced, while the operating power of the second heating section 320 and the third heating section 330 can be increased, so that the heating chamber, as well as the interior and periphery of the reaction zone 20, can have a more uniform thermal field, thereby reducing the influence of temperature difference factors on the deposition effect of the film product and improving the thickness uniformity of the film product during the deposition process within the reaction zone 20.

[0042] Based on the above embodiments, such asFigure 1 and Figure 3 As shown, in order to improve the precision and intelligent adjustment of the upper heater 30, the heating cavity also includes a first temperature sensor 610, a second temperature sensor 620 and a third temperature sensor 630. The first temperature sensor 610, the second temperature sensor 620 and the third temperature sensor 630 are all set on the air inlet spray plate 220 and are spaced apart along the arrangement direction of the three heating parts in the upper heater 30, so as to perform real-time temperature detection on different areas of the air inlet spray plate 220.

[0043] Specifically, the first temperature sensor 610 is located near the air inlet of the air inlet spray plate 220 to monitor the initial temperature of the reaction gas entering the reaction zone 20; the second temperature sensor 620 is located in the middle area of ​​the air inlet spray plate 220 to monitor the temperature of the reaction gas in the inner cavity area 230 in the vertical direction facing the middle area of ​​the air inlet spray plate 220 during the spraying process; and the third temperature sensor 630 is located at the tail of the air inlet spray plate 220 to monitor the final temperature of the tail of the air inlet spray plate 220 after the reaction gas has passed through it.

[0044] The aforementioned temperature sensors enable real-time monitoring of temperature changes at different locations on the inlet spray plate 220 during the reaction process, thereby providing accurate feedback information for the temperature control of the upper heater 30. Specifically, the first temperature sensor 610 is communicatively connected to the controller of the second heating unit 320 near the inlet. By monitoring the temperature near the inlet, the controller can adjust the heating power of the second heating unit 320 as needed to ensure that the temperature of the reaction gas entering the reaction zone 20 meets the process requirements.

[0045] The second temperature sensor 620 is communicatively connected to the controller of the first heating section 310. By monitoring the temperature changes in the intermediate region, the controller can precisely adjust the temperature of the first heating section 310, thereby ensuring the temperature stability of the reaction gas during the spraying process. Similarly, the third temperature sensor 630 is communicatively connected to the controller of the third heating section 330, located near the tail of the inlet spray plate 220, to detect the temperature at the tail of the inlet spray plate 220 and adjust the operating state of the third heating section 330 accordingly. Through the above-mentioned multi-point temperature monitoring and feedback control design, the heating chamber provided in this embodiment of the invention can achieve precise control of the temperature of the reaction gas, improving the stability of the process.

[0046] It should be noted that the temperature detection by the first temperature sensor 610, the second temperature sensor 620, and the third temperature sensor 630 in the above embodiments, which enables the adjustment of each heating element, can be specifically adjusted according to the actual operating conditions. For example, when it is necessary to maintain the temperature uniformity of the entire heat field, a preset operating temperature can be set for the controllers of the three heating elements. When the real-time monitored temperature of a single temperature sensor is lower than the preset operating temperature, the controller of the corresponding heating element is fed back to increase the operating power of that heating element to achieve a temperature rise in the corresponding area. Conversely, when the real-time monitored temperature of a single temperature sensor is higher than the preset operating temperature, the controller of the corresponding heating element is fed back to reduce the operating power of that heating element to achieve a temperature drop in the corresponding area. This ensures that the temperature difference between the monitoring areas of each temperature sensor remains within the error range, thereby achieving temperature uniformity adjustment of the heating cavity.

[0047] In other operating conditions, such as when different areas within the heating chamber require different temperature differences to achieve varying thicknesses in the membrane product, the controller for each heating section can be individually set to adjust the temperature, and adjustments can be made in real time based on the feedback values ​​from its corresponding temperature sensor to meet the required thermal field requirements.

[0048] The foregoing embodiments mainly detail the structure of the upper heater 30. To further improve the uniformity of the heat field within the heating cavity, in some embodiments of this invention, such as... Figure 2 and Figure 4 As shown, the lower heater 50 adopts a ring-shaped design structure, specifically including a fourth heating section 510 and a fifth heating section 520 arranged concentrically. Both heating sections adopt a ring structure and are independently arranged to achieve independent adjustment. The concentric arrangement of the fourth heating section 510 and the fifth heating section 520 can ensure uniform heat distribution and avoid local overheating or uneven temperature.

[0049] It should also be noted that the fourth heating section 510, with its smaller radius, is positioned relatively close to the wafer carrier 210. Through its smaller radius and dense arrangement of heating wires, it primarily heats the central region of the wafer at the bottom of the carrier, ensuring that the central region of the wafer at the bottom meets the higher process temperature requirements during the reaction. The fifth heating section 520, on the other hand, is mainly used to heat the edge region at the bottom of the reaction zone 20. Its heating wires do not fill the corner regions at the bottom of the heating cavity. By independently adjusting the heating power of the fifth heating section 520, temperature control of the edge region can be achieved, thereby ensuring the temperature uniformity of the entire bottom of the reaction zone 20.

[0050] The independent adjustment structure design of the lower heater 50 enables the lower heater 50 to flexibly control the temperature of different areas at the bottom of the reaction zone 20 according to different process requirements, thereby improving the stability and repeatability of the process.

[0051] It should also be noted that, based on the above embodiments, considering that the edges and sharp corners of the heating cavity are prone to heat exchange with the outside environment and are areas where temperature changes are more severe, in some embodiments of this utility model, the heating wires of the fifth heating part 520 are arranged in a more dense arrangement near the corners of the heating cavity, in addition to the overall ring structure. This improves the heating efficiency of the corresponding areas and ensures that the temperature in the corners rises quickly and remains stable. In other words, the denser arrangement of the heating wires effectively compensates for heat loss in the corners, thereby achieving a uniform temperature distribution throughout the entire heating cavity.

[0052] Similarly, in the heating cavity provided in this embodiment of the present invention, a fourth temperature sensor 640 and a fifth temperature sensor 650 are also provided inside the heating cavity. The fourth temperature sensor 640 is positioned close to the wafer carrier 210 to detect temperature changes in the area near the wafer carrier 210 in real time. Simultaneously, the fourth temperature sensor 640 is communicatively connected to the controller of the fourth heating unit 510 to provide feedback to the controller of the fourth heating unit 510 to adjust the operating status of the fourth heating unit 510, ensuring that the temperature in the center area at the bottom of the wafer meets process requirements. The fifth temperature sensor 650 is positioned close to the exhaust pipe 240 and is communicatively connected to the controller of the fifth heating unit 520.

[0053] By monitoring temperature changes near the exhaust pipe 240, the controller can adjust the heating power of the fifth heating section 520 as needed to ensure that the temperature of the bottom edge area of ​​the reaction zone 20 meets process requirements. The fourth temperature sensor 640 and the fifth temperature sensor 650 enable fine-tuning of the temperature at the bottom and surrounding area of ​​the wafer carrier 210 in the reaction zone 20, and allow for timely detection and independent adjustment of abnormal temperatures, thereby improving the safety and reliability of the equipment.

[0054] The fourth temperature sensor 640 and the fifth temperature sensor 650, combined with the results of the upper heater 30 provided in the above embodiments, and the settings of the first temperature sensor 610, the second temperature sensor 620 and the third temperature sensor 630, can perform real-time temperature adjustment of five important areas in the heating cavity and achieve independent adjustment. At the same time, the distributed structure of the upper heater 30 and the lower heater 50 can cover most areas in the heating cavity, including the corner positions, thereby achieving the adjustment of the uniformity of the thermal field in the heating cavity.

[0055] Furthermore, it should be noted that, considering the temperature distribution and heat conduction within the heating cavity, in some embodiments of this invention, the heating wire density of the second heating section 320 is greater than that of the first heating section 310. Similarly, in embodiments with a third heating section 330, the heating wire density of the third heating section 330 is also greater than that of the first heating section 310. During the heating process, the central region of the reaction zone 20 typically requires a higher temperature to meet process requirements, while the second heating section 320 and the third heating section 330 are primarily responsible for heating the edge regions of the reaction zone 20. Since heat conduction in the edge regions is relatively slow and easily affected by the surrounding environment, a higher heating wire density is required to ensure sufficient heat supply.

[0056] By increasing the heating wire density of the second heating section 320 and the third heating section 330, the heating efficiency of the inner edge region of the heating cavity can be improved, ensuring that the temperature at the edge of the heating cavity can rise rapidly and remain stable. Furthermore, this differential heating wire density design allows for fine adjustment of the temperature distribution within the heating cavity. In some processes, different temperature controls may be required for the center and edge regions of the reaction zone 20 to achieve specific chemical reactions or physical processes. By adjusting the heating wire density of the second heating section 320 and the third heating section 330, independent temperature control of the edge region of the reaction zone 20 can be achieved, thereby meeting complex process requirements.

[0057] To further improve the uniformity of the thermal field within the heating cavity, in some embodiments of this invention, a mirror reflector 70 is provided inside the heating cavity. The mirror reflector 70 is positioned close to or against the inner wall of the heating cavity and surrounds structures such as the upper heater 30, the wafer heater 40, and the lower heater 50. The main function of the mirror reflector 70 is to reflect heat and reduce heat conduction loss on the wall of the heating cavity. When the heat released by the heater reaches the position of the mirror reflector 70, the mirror reflector 70 can reflect the heat back into the interior of the heating cavity, thereby improving the heat utilization efficiency. It can not only reduce energy loss but also improve the heating efficiency of the heating cavity, ensuring that heat can be evenly distributed throughout the entire heating cavity.

[0058] Furthermore, the mirror reflector 70 improves the temperature uniformity inside the heating cavity. Because heat is evenly distributed during reflection, localized overheating or uneven temperature distribution can be avoided.

[0059] Furthermore, in some embodiments of this utility model, the heating wires of the first heating part 310 and the second heating part 320 are both arranged in a rectangular pattern. It should be noted that the rectangular pattern is an efficient heating wire layout method, which has a more uniform heat release path during the heating process and can maximize the use of the internal space of the heater, while ensuring that the heat can be evenly transferred to different positions in the heating cavity and reducing heat loss during the transfer process.

[0060] It should also be noted that the rectangular heating wire arrangement structure has good adjustability. By adjusting the spacing and density of the heating wires, the heater power can be flexibly controlled to meet different process requirements. When it is necessary to focus on heating the central area of ​​the heating chamber, the heating power of that area can be increased by increasing the heating wire density of the first heating section 310; while when it is necessary to heat the edge area of ​​the reaction zone 20, this can be achieved by adjusting the heating wire density of the second heating section 320.

[0061] Furthermore, this utility model embodiment also provides a deposition device, the deposition device having a heating chamber provided in any of the above embodiments; since the heating chamber has the technical effects provided in any of the above embodiments, the deposition device also has the above technical effects, which will not be repeated here.

[0062] The terms "first," "second," "left side," and "right side," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units may not be defined in the listed steps or units, but may include steps or units not listed.

[0063] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating chamber, characterized in that, The inner part comprises an upper heater, a wafer heater and a lower heater arranged in a vertical direction, the wafer heater is arranged close to the wafer and between the upper heater and the lower heater; The upper heater comprises at least a first heating part and a second heating part arranged independently, the first heating part is arranged above the wafer heater, and the second heating part is arranged opposite to the first heating part and fills the top area of the heating cavity together with the first heating part.

2. The heating chamber of claim 1, wherein, The inner part comprises a reaction zone, the reaction zone comprises a wafer carrier, an inlet spray plate and an inner cavity area, the wafer carrier is arranged inside the inner cavity area, the reaction gas passes through the wafer carrier through the guidance of the inlet spray plate and the inner cavity area, and is discharged from the heating cavity through the exhaust pipeline; the wafer heater is arranged close to the bottom of the wafer carrier.

3. The heating chamber of claim 2, wherein, The upper heater further comprises a third heating part arranged independently, the third heating part is arranged on the opposite side of the first heating part with the second heating part; the heating cavity further comprises a first temperature sensor, a second temperature sensor and a third temperature sensor arranged respectively at the inlet, the middle area and the tail of the inlet spray plate, the first temperature sensor is in communication connection with the controller close to the second heating part near the inlet, the second temperature sensor is in communication connection with the controller of the first heating part; the third temperature sensor is in communication connection with the controller close to the third heating part near the tail of the inlet spray plate.

4. The heating chamber of claim 2, wherein, The lower heater comprises a fourth heating part and a fifth heating part arranged in a ring structure and concentrically, and the fourth heating part and the fifth heating part are arranged independently.

5. The heating chamber of claim 4, wherein, The radius of the fourth heating part is smaller than that of the fifth heating part and is arranged close to the wafer carrier; the heating wire arrangement of the fifth heating part fills the corner area of the heating cavity.

6. The heating chamber of claim 4, wherein, Further comprising a fourth temperature sensor and a fifth temperature sensor, the fourth temperature sensor is arranged close to the wafer carrier and in communication connection with the controller of the fourth heating part; the fifth temperature sensor is arranged close to the exhaust pipeline and in communication connection with the controller of the fifth heating part.

7. The heating chamber of claim 1, wherein, The heating wire arrangement density of the second heating part is greater than that of the first heating part.

8. The heating chamber of claim 1, wherein, The inner part of the heating cavity is provided with a mirror surface reflection plate, the mirror surface reflection plate is arranged close to the wall surface of the heating cavity and surrounds the upper heater, the wafer heater and the lower heater.

9. The heating chamber of claim 1, wherein, The heating wire of the first heating part and the second heating part is arranged in a rectangular structure.

10. A deposition apparatus, characterized by, The heating cavity comprises the heating cavity of any one of claims 1-9. The heating cavity comprises the heating cavity of any one of claims 1-9.

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