Laser processing assembly for deep hole
By introducing dust extraction and cooling structures into the laser processing components, the problems of rapid temperature rise of silicon wafers and the impact of powder particles on etching accuracy during the etching of individual holes were solved, achieving a highly efficient laser processing effect.
Patent Information
- Application Number
- CN202520219850.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-12
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2035-02-12
AI Technical Summary
In existing laser processing methods for etching individual holes one by one, the high energy of each laser beam causes the silicon wafer temperature to rise rapidly, generating a large amount of molten material and powder particles, which affects the etching accuracy and progress.
Design a laser processing assembly that includes an adsorption platform, a dust extraction structure, and a cooling structure. The dust extraction structure removes powder particles in a timely manner, and the cooling structure reduces the temperature of the silicon wafer, ensuring the stability and precision of the etching process.
This effectively reduces the rate of temperature rise in silicon wafers, decreases the generation of powder particles, improves etching efficiency and hole precision, and ensures the continuity and quality of laser processing.
Smart Images
Figure CN223863064U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of laser processing technology, specifically to a laser processing component for deep holes. Background Technology
[0002] Silicon wafers are a type of semiconductor material that requires extremely high light absorption in some applications. The structure on a silicon wafer that absorbs light energy is called a light-trapping structure. Light-trapping structures can reduce reflection and increase light absorption. The main light-trapping structures include pyramid structures, porous silicon structures, and black silicon structures. Among them, porous silicon structures can be completed by laser etching.
[0003] Existing laser etching methods for porous silicon structures are generally divided into two types based on area. One is the unit area etching method, which is fast but has low energy per laser beam, typically only able to process light-trapping holes with a depth of 200nm-300nm. Furthermore, the distance between the current and next etching operations per unit area is relatively large, resulting in lower energy and slower temperature rise, generally eliminating the need for dust removal or cooling. The other method is to etch individual holes one by one, especially for holes with a depth greater than 10μm. In this method, the energy per laser beam is higher, causing the temperature of the processed silicon wafer to rise rapidly. This also greatly reduces the generation of molten material (this form cannot be absorbed by dust removal), resulting in more powder particles. If these particles are not removed in time, they will affect the etching accuracy and progress of the next hole. Therefore, there is an urgent need for a laser processing component for deep holes to solve the above problems. Utility Model Content
[0004] The purpose of this invention is to provide a laser processing component for deep holes, in order to solve the problem in the laser processing method for etching individual holes one by one in the background art. Due to the high energy of each laser beam, the temperature of the processed silicon wafer rises rapidly, which greatly reduces the generation of molten material (this form cannot be absorbed by dust extraction), resulting in a large amount of powder particles. If these particles are not removed in time, it will affect the etching accuracy and progress of the next hole.
[0005] To achieve the above objectives, this utility model provides the following technical solution: a laser processing component for deep holes, comprising an adsorption table, a dust extraction structure, and a cooling structure, wherein the dust extraction structure is disposed above the adsorption table and is 5mm-10mm away from the adsorption table.
[0006] Preferably, the dust extraction structure includes an upper shell, a lower plate is installed on the side of the upper shell near the adsorption platform, a cavity is left between the lower plate and the upper shell, and at least two dust extraction channels are opened on the lower plate.
[0007] Preferably, the lower plate has a through hole through which a central tube is sleeved, and a dust extraction port is left between each dust extraction channel and the central tube. The dust extraction channel is connected to the dust extraction port and the cavity.
[0008] Preferably, a dust outlet connector is installed on the upper shell, and the dust outlet connector is connected to an external pipeline.
[0009] Preferably, the cooling structure includes a water inlet connector and a water outlet connector, both of which are connected to a water pipe seat.
[0010] Preferably, a water inlet is installed on the water inlet pipe seat, and at least two interconnecting connectors are installed on one side of the adsorption platform, with each water inlet connected to an interconnecting connector via a water pipe.
[0011] Preferably, an air intake connector is installed on the adsorption platform.
[0012] Compared with the prior art, the beneficial effects of this utility model are as follows: by timely dust removal and cooling, the temperature rise rate of the silicon wafer is reduced in the laser processing method of etching individual holes one by one, the powder particles on the silicon wafer are reduced, and the accuracy and progress of laser etching the next hole are not affected, thus further improving the etching efficiency. Attached Figure Description
[0013] Figure 1 This is a front view structural diagram of the present invention;
[0014] Figure 2 This is a side view of the structure of this utility model;
[0015] Figure 3 This utility model Figure 2 A schematic diagram of the lower plate in the middle;
[0016] Figure 4 This is a fluid simulation diagram of the dust extraction structure in this utility model.
[0017] In the diagram: 1. Adsorption platform; 2. Dust extraction structure; 21. Upper shell; 22. Lower plate; 23. Dust extraction duct; 24. Central tube; 25. Dust extraction port; 26. Dust outlet connector; 3. Cooling structure; 31. Water inlet connector; 32. Water outlet connector; 33. Water pipe seat; 34. Water inlet connector; 4. Air intake connector. Detailed Implementation
[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.
[0019] Please see Figures 1 to 4This utility model provides a technical solution: a laser processing component for deep holes, including an adsorption table 1, a dust extraction structure 2 and a cooling structure 3. The dust extraction structure 2 is disposed above the adsorption table 1 and is 5mm-10mm away from the adsorption table 1.
[0020] Furthermore, the dust extraction structure 2 includes an upper shell 21, a lower plate 22 is installed on the side of the upper shell 21 near the adsorption platform 1, a cavity is left between the lower plate 22 and the upper shell 21, at least two dust extraction channels 23 are opened on the lower plate 22, and there is an opening at the bottom of the upper shell 21. The lower plate 22 blocks the opening of the upper shell 21 to form a cavity.
[0021] Furthermore, a through hole is provided on the lower plate 22, and a central tube 24 is sleeved in the through hole. A dust extraction port 25 is provided between each dust extraction channel 23 and the central tube 24. The dust extraction channel 23 is connected to the dust extraction port 25 and the cavity.
[0022] It should be noted that each dust extraction channel 23 is fan-shaped, and the center point of the fan-shaped channel coincides with the center point of the central tube 24. The central tube 24 needs to be filled with laser light.
[0023] Furthermore, a dust outlet connector 26 is installed on the upper shell 21, and the dust outlet connector 26 is connected to a pipeline.
[0024] Furthermore, the cooling structure 3 includes a water inlet connector 31 and a water outlet connector 32. Both the water inlet connector 31 and the water outlet connector 32 are connected to a water pipe seat 33, through which water can pass.
[0025] Furthermore, a water inlet connector 34 is installed on the water inlet pipe seat 33, and at least two interconnecting connectors are installed on one side of the adsorption platform 1. Each water inlet connector 34 is connected to an interconnecting connector via a water pipe.
[0026] Furthermore, an air intake connector 4 is installed on the adsorption platform 1. An air pump is connected to the air intake connector 4. The air pump draws air through the air intake connector 4 to adsorb the silicon wafer on the adsorption platform 1 downwards.
[0027] Example 1: A silicon wafer is placed on the adsorption platform 1. An air pump is connected to the suction connector 4 under the adsorption platform 1. The air pump draws air through the suction connector 4 to stabilize the silicon wafer on the adsorption platform 1, preventing it from shaking. A laser emitter (not shown) emits a laser beam that reaches the surface of the silicon wafer through the central tube 24, etching holes. Because the hole depth is greater than 10μm, the laser energy is high. During etching on the silicon wafer, the amount of molten material generated is reduced, while more powder is generated. The distance between the dust extraction structure 2 and the adsorption platform 1 is 5-10mm. The suction device (not shown) connected to the dust outlet connector 26 is activated to absorb the powder particles generated on the silicon wafer. The powder particles pass through the dust extraction channel 23, the dust extraction port 25, and the cavity, forming an annular airflow. The fluid simulation at this time is as follows: Figure 4The wind speed at the dust outlet 26 can reach 20 m / s. At this time, the wind speed in the dust extraction channel 23 can reach 4 m / s. When the laser etches a nearby hole, the dust particles on the silicon wafer become less and the dust particles are no larger than 5 μm. The two dust extraction channels 23 can meet the dust extraction needs at both ends. In addition, the water tank (not shown) connected to the cooling structure 3 is activated. The water tank supplies cold water into the water inlet 31, and then through the water pipe seat 33, water inlet 34 and water pipe to reach the adsorption platform 1 to cool the high temperature on the silicon wafer. After cooling, the water is discharged from the water outlet 32 through the water pipe seat 33 connected to the water inlet 34, water pipe and water outlet 32. This high temperature water can be recycled.
[0028] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely preferred examples and are not intended to limit the utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model. The scope of protection of this utility model is defined by the appended claims and their equivalents.
Claims
1. A laser processing component for deep holes, characterized in that: It includes an adsorption platform (1), a dust extraction structure (2) and a cooling structure (3). The dust extraction structure (2) is located above the adsorption platform (1) and is 5mm-10mm away from the adsorption platform (1).
2. The laser processing component for deep holes according to claim 1, characterized in that: The dust extraction structure (2) includes an upper shell (21), and a lower plate (22) is installed on the side of the upper shell (21) near the adsorption platform (1). A cavity is left between the lower plate (22) and the upper shell (21), and at least two dust extraction channels (23) are opened on the lower plate (22).
3. The laser processing component for deep holes according to claim 2, characterized in that: The lower plate (22) has a through hole, and a central tube (24) is sleeved in the through hole. A dust extraction port (25) is left between each dust extraction channel (23) and the central tube (24). The dust extraction channel (23) is connected to the dust extraction port (25) and the cavity.
4. The laser processing component for deep holes according to claim 2, characterized in that: A dust outlet connector (26) is installed on the upper shell (21), and the dust outlet connector (26) is connected to a pipeline.
5. The laser processing component for deep holes according to claim 1, characterized in that: The cooling structure (3) includes a water inlet connector (31) and a water outlet connector (32), both of which are connected to a water pipe seat (33).
6. The laser processing component for deep holes according to claim 5, characterized in that: A water inlet (34) is installed on the water inlet pipe seat (33), and at least two interconnecting connectors are installed on one side of the adsorption platform (1). Each water inlet (34) is connected to an interconnecting connector via a water pipe.
7. The laser processing component for deep holes according to claim 1, characterized in that: An air intake connector (4) is installed on the adsorption platform (1).