High-temperature working condition testing device for silicon controlled rectifier

By designing a high-temperature testing device that includes a test track, a heating zone, a test area, and a cooling unloading zone, the problem of withstand voltage and leakage current testing of thyristors under high-temperature environments was solved, achieving efficient thyristor testing and avoiding additional labor costs.

CN223870781UActive Publication Date: 2026-02-03ANHUI PROVINCE QIMEN COUNTY HUANGSHAN ELECTRIC APPLIANCE
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Patent Information

Application Number
CN202423312439.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-31
Publication Date
2026-02-03
Estimated Expiration
2034-12-31

AI Technical Summary

Technical Problem

The lack of existing experimental equipment specifically designed for high-temperature operation of mass-produced silicon controlled rectifiers makes it difficult to test withstand voltage and leakage current.

Method used

Design a high-temperature working condition testing device that includes a test track, a heating zone, a test area, and a cooling unloading zone. The device uses an electric heater to provide simulated high temperature, combines a withstand voltage tester and a leakage current tester, transmits electrical signals through probes connected to the thyristor pins, and uses coolant to accelerate heat dissipation.

Benefits of technology

It realizes high-temperature operating condition simulation testing of thyristors, with simple structure, convenient application, avoids additional manpower costs, and can meet the test cycle requirements.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a high-temperature working condition testing device for a silicon controlled rectifier, which comprises a testing track, and the end face of the testing track is provided with a mounting groove; the test track is of a section of linear track structure, and a heating area, a test area and a cooling blanking area are arranged in the length direction of the test track; heaters are arranged at the bottoms of the heating temperature area and the testing area and are used for providing simulation temperature required by a high-temperature working condition; a tester is arranged on the test area; during testing, the surface of the silicon controlled rectifier upper heat dissipation plate faces downwards and is arranged in the mounting groove. According to the utility model, the chute track is used as a main body, and the heater is arranged at the bottom of the chute track to simulate a high-temperature working condition so as to test the silicon controlled rectifier. The structure is simple and application is convenient.
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Description

TECHNICAL FIELD

[0001] The utility model relates to semiconductor detection technical field, concretely is a high temperature working condition testing arrangement for silicon controlled rectifier. BACKGROUND

[0002] The silicon controlled rectifier is very extensive in industrial application, and the quality of the silicon controlled rectifier in the system directly determines the stability and reliability of the system, so the early testing of the silicon controlled rectifier is particularly important.

[0003] At present, the silicon controlled rectifier can be applied to the working environment of relatively high temperature, which has not small challenge to the voltage resistance and leakage current of the silicon controlled rectifier, but there is no special experimental equipment for batch high temperature working condition of the silicon controlled rectifier on the market at present. UTILITY MODEL CONTENT

[0004] The utility model discloses a high temperature working condition testing arrangement for silicon controlled rectifier to solve the problem in the background art.

[0005] In order to realize the above-mentioned purpose, the utility model provides the following technical scheme: a high temperature working condition testing arrangement for silicon controlled rectifier, including test track, the end face of test track is equipped with installation groove;

[0006] The test track is a straight track structure, and along the length direction of the test track, a heating temperature zone, a test zone and a cooling discharge area are arranged;

[0007] The bottom of the heating temperature zone and the test zone is provided with a heater for providing the simulation temperature required by the high temperature working condition, and a tester is arranged on the test zone.

[0008] During testing, the face of the heat sink on the silicon controlled rectifier is placed into the installation groove.

[0009] Preferably, the heater is an electric heater, and the outside of the test track in the heating temperature zone and the test zone is wrapped with a heat preservation layer.

[0010] Preferably, the heating temperature zone is provided with at least three adjacent preheating temperature zones, and the temperature of the three adjacent preheating temperature zones increases in turn in the direction towards the test zone.

[0011] Preferably, the bottom of the tester is provided with a vertically liftable probe, and the probe can be connected with the pin of the silicon controlled rectifier on the test zone when descending, so as to complete the electric signal transmission and realize detection.

[0012] Preferably, the bottom of the cooling discharge area is provided with a radiator, and the outside of the radiator is connected with a pipeline, and circulating cooling liquid is introduced into the pipeline to accelerate cooling.

[0013] Preferably, the end of the cooling discharge area is fixedly provided with a hollow groove plate, and the hollow groove plate is butted with the installation groove.

[0014] Compared with the prior art, the utility model discloses the device with the chute track as the main body is provided with the heater at the bottom of the chute track, simulates high temperature working condition and realizes the test of the silicon controlled rectifier. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 It is whole structure schematic diagram of the utility model;

[0016] Figure 2 It is tester installation schematic diagram;

[0017] Figure 3 It is silicon controlled rectifier structure schematic diagram. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model and not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the person skilled in the art without creative labor fall within the protection scope of the utility model.

[0019] As Figures 1-3 shown, the utility model provides a technical scheme: including test track 1, the end face of test track 1 is provided with installation slot 11;

[0020] Test track 1 is a straight track structure, and along the length direction of test track 1, heating temperature zone 12, test area 14 and cooling blanking area 15 are arranged;

[0021] The bottom of heating temperature zone 12 and test area 14 is provided with heater 10, and the heater 10 is an electric heater, which is used to provide the simulation temperature required by high temperature working condition. The outside of the test track 1 where heating temperature zone 12 and test area 14 are located is wrapped with a heat preservation layer. In addition to achieving the effect of heat preservation, it can also avoid accidental contact and cause personnel scalding.

[0022] Heating temperature zone 12 is provided with at least three adjacent preheating temperature zones, and the temperature of the three adjacent preheating temperature zones increases in the direction of test area 14. The effect of stepwise temperature rising preheating is realized. Each preheating temperature zone can be provided with a heater for temperature control. The output temperature of the heater is controlled to be between 100-140 DEG C, and the temperature of test area 14 needs to reach 145 DEG C.

[0023] Tester 3 is installed on test area 14; tester 3 is a withstand voltage tester or leakage current tester, used to detect the withstand voltage and leakage current of the thyristor. The bottom of tester 3 is equipped with a vertically movable probe, which can connect to the pin of the thyristor on test area 14 when it descends, thereby completing the transmission of electrical signals and realizing the detection.

[0024] A radiator is installed at the bottom of the cooling unloading area 15. An external pipe 13 is connected to the radiator, through which circulating coolant flows. The coolant is cooled by cold air outside the device to accelerate cooling. Alternatively, a cooling fan can be installed directly at the bottom of the track. However, if a cooling fan is installed directly, vibration damping during fan operation must be considered to avoid affecting test results. Therefore, using coolant for cooling is preferred. A hollow slot plate 16 is fixedly installed at the end of the cooling unloading area 15, and the hollow slot plate 16 connects to the mounting slot 11. Typically, thyristors are transported and stored using hollow flat tubes. During use, one end of the hollow flat tube is inserted into the hollow slot plate 16, and the thyristor product from the cooling unloading area 15 can be pushed into the hollow flat tube for storage.

[0025] During testing, the surface of the heat sink 23 on the SCR 2 is placed face down in the mounting slot 11. (Refer to...) Figure 3 As shown, the structure of the thyristor 2 includes pins 21 and a plastic casing 22. The chip circuit is enclosed in the plastic casing 22, and the heat sink 23 is exposed outside the plastic casing 22.

[0026] In this embodiment, the testing device uses manual feeding and pushing. In practical applications, if a robotic arm or other actuator is used for pushing, the limiting and fixing of the thyristors in the testing area 14 and the screening of defective products in the cooling unloading area 15 must also be considered. Conventional thyristor quality control testing itself requires at least one operator to perform visual inspection. Therefore, using manual feeding, pushing, and defective product rejection for this testing device will not increase additional labor costs and can also save on device manufacturing costs.

[0027] During use, from Figure 1 As shown in the diagram, the thyristors are fed from the left side, with their sides abutting against each other for pushing. They sequentially enter the heating zone 12 and are tested in the testing zone 14. Since they need to stay in the testing zone 14 for a certain period of time, the thyristors in the heating zone 12 can also utilize this short time to achieve sufficient preheating. Therefore, manual pushing can meet the testing cycle. After the tester 3 completes the test and provides feedback, the thyristors are pushed forward again. If there are any defective products, they are picked out in the cooling unloading zone 15. The others continue to be pushed forward until they are collected in the hollow slot plate 16.

[0028] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-temperature operating condition testing device for silicon controlled rectifiers, characterized in that: It includes a test track (1), and the end face of the test track (1) is provided with a mounting groove (11); The test track (1) is a straight track structure, and along the length of the test track (1), there are heating temperature zone (12), test zone (14) and cooling unloading zone (15); Heaters (10) are installed at the bottom of both the heating zone (12) and the test zone (14) to provide the simulated temperature required for high-temperature operation; a tester (3) is installed on the test zone (14); During testing, the surface of the thyristor (2) containing the heat sink (23) is placed face down into the mounting slot (11).

2. The high-temperature operating condition testing device for silicon controlled rectifiers according to claim 1, characterized in that: The heater (10) is an electric heater, and the test track (1) where the heating temperature zone (12) and the test zone (14) are located is wrapped with an insulation layer.

3. The high-temperature operating condition testing device for silicon controlled rectifiers according to claim 2, characterized in that: The heating zone (12) is set with at least three adjacent preheating zones facing the test zone (14), and the temperatures of the three adjacent preheating zones increase sequentially.

4. The high-temperature operating condition testing device for silicon controlled rectifiers according to claim 3, characterized in that: The bottom of the tester (3) is equipped with a vertically movable probe. When the probe descends, it can connect with the pin of the thyristor on the test area (14) to complete the transmission of electrical signals and realize the detection.

5. A high-temperature operating condition testing device for silicon controlled rectifiers according to claim 1, characterized in that: A radiator is installed at the bottom of the cooling unloading area (15), and the radiator is connected to a pipeline (13). Circulating coolant is introduced into the pipeline (13) to accelerate cooling.

6. The high-temperature operating condition testing device for silicon controlled rectifiers according to claim 5, characterized in that: A hollow trough plate (16) is fixedly installed at the end of the cooling unloading area (15), and the hollow trough plate (16) is connected to the mounting groove (11).