High integrated power module system formed by power single tubes with double-sided heat dissipation

Abstract

The utility model relates to a high-integration-power module system composed of a double-face heat dissipation power single tube. The high-integration-power module system comprises a bottom plate, a connecting layer, at least one power single tube, a control panel, an insulation heat dissipation layer and insulation protection glue. The power single tube is arranged on the bottom plate through the connecting layer; the control panel is electrically connected with all the power single tubes; a metal component is arranged on the back face of the insulation heat dissipation layer, and the insulation heat dissipation layer is attached to the power single tube through the metal component. The insulation protection glue covers the connection layer, all the power single tubes and the insulation heat dissipation layer, and the heat dissipation surface of the insulation heat dissipation layer is located outside the insulation protection glue. According to the utility model, the integration level is high, corresponding pins can be led out through the internal design to be connected with passive and main branch components, and can also be connected with a control panel into a whole, thereby being more flexible and convenient, and realizing better customization.

Description

Technical Field

[0001] This utility model relates to the field of integrated circuit manufacturing technology, and in particular to a high-integration power module system composed of a power single tube with double-sided heat dissipation. Background Technology

[0002] Modules are no longer limited to being combined with other functional units to create products; the trend of integrated design has penetrated the entire industry. The advantages of integration include:

[0003] Improve system efficiency;

[0004] Modular integration combines multiple related functional modules, reducing interaction losses between modules and improving the overall system efficiency. For example, in electronic devices, integrating multiple functional circuits into a single chip module reduces signal transmission delays and interference, making the device operate more smoothly and efficiently.

[0005] Enhance system stability;

[0006] The integrated modules have undergone unified design and optimization, resulting in better internal compatibility. Compared to scattered modules, this reduces system failures caused by unstable connections or interface incompatibility between modules, thereby enhancing system stability. For example, in software systems, integrating related functions into a single module can avoid the error risks arising from complex calling relationships between different modules.

[0007] Facilitates system maintenance and upgrades;

[0008] For maintenance personnel, modular integration makes the system structure clearer. If a problem occurs in a certain function, the corresponding integrated module can be directly located for maintenance. When upgrading the system, the integrated module can also be upgraded, without having to operate on each small module individually, reducing maintenance costs and upgrade difficulty.

[0009] Promote functional innovation and reuse;

[0010] Modular integration facilitates the innovative combination of different functions to form new functional modules. These integrated modules can be reused in other projects or systems, reducing redundant development work and improving resource utilization. For example, in automobile manufacturing, some integrated electronic control modules can be reused in different models, while also facilitating the addition and innovation of new functions on the existing basis. Utility Model Content

[0011] The purpose of this utility model patent is to provide a highly integrated power module system composed of a single power tube with double-sided heat dissipation.

[0012] Includes a base plate, a connecting layer, at least one power tube, a control board, an insulating and heat-dissipating layer, and an insulating protective adhesive;

[0013] The power tube is mounted on the base plate via the connecting layer;

[0014] The control board is electrically connected to all of the power transistors;

[0015] The back of the insulating heat dissipation layer has a metal component, and the insulating heat dissipation layer is attached to the power tube through the metal component;

[0016] The insulating protective adhesive covers the connecting layer, all power tubes, and the insulating heat dissipation layer, with the heat dissipation surface of the insulating heat dissipation layer located outside the insulating protective adhesive.

[0017] Optionally, the insulating protective adhesive covers the connecting layer, all power tubes, the control board, and the insulating heat dissipation layer, with the control surface of the control board and the heat dissipation surface of the insulating heat dissipation layer located outside the insulating protective adhesive.

[0018] Optionally, a heat sink is attached to the bottom of the base plate.

[0019] Specifically, the power transistor includes at least one chip, a metal conductive layer, a lead frame, and a molding compound;

[0020] The chip is disposed on the lead frame, and both sides of the chip are provided with a metal conductive medium;

[0021] The S and G terminals on the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium.

[0022] The drain electrode on the chip is electrically connected to the metal conductive layer through a metal conductive medium.

[0023] The molding compound encapsulates the chip, the metal conductive layer, and the lead frame, with the surfaces of the metal conductive layer and the lead frame exposed outside the molding compound.

[0024] Specifically, the power transistor includes at least one chip, a lead frame, and a molding compound;

[0025] The chip is disposed on the lead frame, and a metal conductive medium is provided on the front side of the chip;

[0026] The S and G terminals on the front side of the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium.

[0027] The molding compound encapsulates the chip and the lead frame, with the back of the chip and the surface of the lead frame both exposed outside the molding compound.

[0028] Furthermore, the power tube is mounted upright or upside down on the base plate.

[0029] Preferably, the pins on the power transistor extend from the periphery of the power transistor.

[0030] Optionally, each of the power tubes is provided with an independent insulating heat dissipation layer, and an independent metal component is attached to the back of the insulating heat dissipation layer.

[0031] Optionally, all the power transistors are divided into at least one group, and in the same group, each power transistor is provided with the same insulating heat dissipation layer;

[0032] In the same group, each of the back sides of the insulating heat dissipation layer, facing the position of the power tube, is fitted with an independent metal component.

[0033] Optionally, all the power transistors are divided into at least one group, and in the same group, each power transistor is provided with the same insulating heat dissipation layer;

[0034] In the same group, the same metal component is attached to the back of the insulating heat dissipation layer.

[0035] Optionally, the base plate is also provided with active components and / or passive components.

[0036] Optionally, the chip is one or more power chips.

[0037] Specifically, the chip is an IGBT power chip and / or a SiC power chip.

[0038] Specifically, the number of control boards is not limited to one, and the control boards are distributed around and / or above the power tube.

[0039] Specifically, the control board is arranged parallel or perpendicular to the module composed of all the power tubes.

[0040] Preferably, a heat dissipation component is attached to the insulating heat dissipation layer.

[0041] Compared with the prior art, the high-integration power module system composed of a double-sided heat dissipation power single tube of this utility model has the following advantages:

[0042] (1) The product is thinner, smaller and more integrated, and the systematic design can save system space and material costs;

[0043] (2) It is easier for customers to accept the user experience, and they can use it directly without designing a separate heat dissipation system, drive control board, etc.

[0044] (3) High integration. Through internal design, corresponding pins can be brought out to connect with passive and main support components, or it can be connected with the control board to become an integrated unit, which is more flexible and convenient and can achieve better customization. Attached Figure Description

[0045] Figure 1 A cross-sectional view of a highly integrated power module system composed of a power single tube with double-sided heat dissipation, as described in Embodiment 1. Figure 1 ;

[0046] Figure 2 A cross-sectional view of a highly integrated power module system composed of a power single tube with double-sided heat dissipation, as described in Embodiment 1. Figure 2 ;

[0047] Figure 3 This is a schematic diagram of the connection between the insulating heat dissipation layer and the metal component in Example 1;

[0048] Figure 4 This is a schematic diagram of the power single transistor in Example 1. Figure 1 ;

[0049] Figure 5 This is a schematic diagram of the power single transistor in Example 1. Figure 2 ;

[0050] Figure 6 This is a schematic diagram of the power single transistor in Example 1. Figure 3 ;

[0051] Figure 7 This is a schematic diagram of the power single transistor in Example 1. Figure 4 ;

[0052] Figure 8 This is a schematic diagram of a highly integrated power module system composed of a single power tube with double-sided heat dissipation, as shown in Example 1.

[0053] Figure 9 This is a schematic diagram of a highly integrated power module system composed of a power single tube with double-sided heat dissipation, as shown in Example 2.

[0054] Figure 10 This is a schematic diagram of a highly integrated power module system composed of a power single tube with double-sided heat dissipation, as shown in Example 3.

[0055] Figure 11 This is a schematic diagram showing the control board being vertically positioned relative to the module in Example 1;

[0056] Figure 12 This is a schematic diagram showing the control board positioned horizontally relative to the module in Example 1. Detailed Implementation

[0057] The specific embodiments of this utility model patent will be further described in detail below with reference to the accompanying drawings.

[0058] Example 1

[0059] In this embodiment, as Figure 1 As shown, a highly integrated power module system composed of a power single tube with double-sided heat dissipation includes a base plate 1, a connecting layer 2, at least one power single tube 3, a control board 4, an insulating heat dissipation layer 5, and an insulating protective adhesive 6.

[0060] The power tube 3 is mounted on the base plate 1 via the connecting layer 2. In this embodiment, the connecting layer 2 is a ceramic copper-clad plate, meaning that both sides of the ceramic are covered with copper layers, which ensures the strength of the connection and effectively guarantees the heat dissipation effect.

[0061] The control board 4 is electrically connected to all of the power tubes 3.

[0062] In this embodiment, as Figure 2 As shown, a heat sink 13 is attached to the bottom of the base plate 1, which effectively improves the heat dissipation effect.

[0063] like Figure 3 As shown, the back of the insulating heat dissipation layer 5 has a metal component 7, and the insulating heat dissipation layer 5 is attached to the power single tube 3 through the metal component 7;

[0064] The control board is protected by protective adhesive, which helps protect it from vibration, especially when used in vehicles. A stable structure is the foundation for ensuring product reliability.

[0065] Alternatively, the control board can be positioned outside the insulating protective adhesive, or the insulating protective adhesive can be left uncovered on the control board.

[0066] The reason it's not protected is because there are flexible or wired connections at the module connection points, not hard connections. This also helps prevent vibration, and the control board also has a protective layer during the process, so there's no need to apply protective adhesive again.

[0067] In this embodiment, as Figure 4 As shown, the power single tube 3 includes a chip 8, a metal conductive layer 9, a lead frame 10, and a molding compound 11;

[0068] The chip 8 is disposed on the lead frame 10, and both sides of the chip 8 are provided with a metal conductive medium 12;

[0069] The S and G terminals on the chip 8 are electrically connected to the corresponding pins on the lead frame 10 through the metal conductive medium 12.

[0070] The drain electrode on the chip 8 is electrically connected to the metal conductive layer 9 through the metal conductive medium 12;

[0071] The molding compound 11 encapsulates the chip 8, the metal conductive layer 9, and the lead frame 10, with the surfaces of the metal conductive layer 9 and the lead frame 10 exposed outside the molding compound 11. The number of chips 8 in a single power transistor 3 can also be two or more, such as... Figure 5 As shown.

[0072] In addition, such as Figure 6 As shown, the power transistor may also include a chip 8, a lead frame 10, and a molding compound 11;

[0073] The chip 8 is disposed on the lead frame 10, and a metal conductive medium 12 is provided on the front side of the chip 8;

[0074] The S and G terminals on the front side of the chip 8 are electrically connected to the corresponding pins on the lead frame 10 through the metal conductive medium 12.

[0075] The molding compound 11 encapsulates the chip 8 and the lead frame 10, with the back of the chip 8 and the surface of the lead frame 10 exposed outside the molding compound 11. The number of chips 8 in a single power transistor 3 can also be two or more, such as... Figure 7 As shown

[0076] The power tube 3 is inverted and embedded in the base plate 1. Alternatively, the power tube 3 can be mounted upright on the base plate 1.

[0077] In this embodiment, the pins on the power transistor are led out from all sides of the power transistor, which effectively increases the heat dissipation area of ​​the upper and lower surfaces of the power transistor and further improves the heat dissipation effect.

[0078] In this embodiment, as Figure 8 As shown, each of the power tubes 3 is provided with an independent insulating heat dissipation layer, and an independent metal component is attached to the back of the insulating heat dissipation layer.

[0079] In this embodiment, the base plate 1 is also provided with active components and / or passive components.

[0080] In this embodiment, the chip 8 is one or more power chips. Specifically, the chip 8 is an IGBT power chip and / or a SiC power chip, which can be designed according to actual needs.

[0081] The module design is not a standard single module found in the market. In its internal structure design, electrical connections are purposefully made and pins are brought out to connect with the control board. The connection method can be directly integrated into one piece, potted together to form a whole, and with the addition of a heat sink, it can form a system-level product. Alternatively, wires can be used to connect the module and the control board, and a separate connection structure can be used to connect them, still forming an integrated product. However, the control board does not need to be potted, and there will be no reliability risks caused by vibration.

[0082] The inventors should note that the number of control boards is not limited to one, and the control boards can be distributed around and / or above the power transistors. Furthermore, the control boards are arranged parallel or perpendicular to the module composed of all the power transistors, such as... Figure 11 and Figure 12 As shown, the design is based on actual needs.

[0083] In addition, heat dissipation components 14 are attached to the insulating heat dissipation layer to further improve the heat dissipation effect, such as... Figure 12 As shown.

[0084] Example 2

[0085] In this embodiment, as Figure 9 As shown, all the power tubes 3 are divided into at least one group, and in the same group, each power tube 3 is provided with the same insulating heat dissipation layer 5;

[0086] In the same group, each of the back sides of the insulating heat dissipation layer 5, facing the position of the power tube, is fitted with an independent metal component 7.

[0087] Other features are the same as in Example 1.

[0088] Example 3

[0089] In this embodiment, as Figure 10 As shown, all the power tubes 3 are divided into at least one group, and in the same group, each power tube 3 is provided with the same insulating heat dissipation layer 5;

[0090] In the same group, the same metal component 7 is attached to the back of the insulating heat dissipation layer 5.

[0091] The preferred embodiments of this utility model have been described in detail above, but this utility model is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of this utility model, and these equivalent modifications or substitutions are all included within the scope defined by the claims of this application.

Claims

1. A highly integrated power module system composed of a single power transistor with double-sided heat dissipation, characterized in that, Includes a base plate, a connecting layer, at least one power tube, a control board, an insulating and heat-dissipating layer, and an insulating protective adhesive; The power tube is mounted on the base plate via the connecting layer; The control board is electrically connected to all of the power transistors; The back of the insulating heat dissipation layer has a metal component, and the insulating heat dissipation layer is attached to the power tube through the metal component; The insulating protective adhesive covers the connecting layer, all power tubes, and the insulating heat dissipation layer, with the heat dissipation surface of the insulating heat dissipation layer located outside the insulating protective adhesive.

2. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, The insulating protective adhesive covers the connecting layer, all power tubes, the control board, and the insulating heat dissipation layer, with the control surface of the control board and the heat dissipation surface of the insulating heat dissipation layer located outside the insulating protective adhesive.

3. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, A heat sink is attached to the bottom of the base plate.

4. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, The power transistor includes at least one chip, a metal conductive layer, a lead frame, and a molding compound; The chip is disposed on the lead frame, and both sides of the chip are provided with a metal conductive medium; The S and G terminals on the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium. The drain electrode on the chip is electrically connected to the metal conductive layer through a metal conductive medium. The molding compound encapsulates the chip, the metal conductive layer, and the lead frame, with the surfaces of the metal conductive layer and the lead frame exposed outside the molding compound.

5. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, The power transistor includes at least one chip, a lead frame, and a plastic package. The chip is disposed on the lead frame, and a metal conductive medium is provided on the front side of the chip; The S and G terminals on the front side of the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium. The molding compound encapsulates the chip and the lead frame, with the back of the chip and the surface of the lead frame both exposed outside the molding compound.

6. A highly integrated power module system composed of a power single tube with double-sided heat dissipation as described in claim 4 or 5, characterized in that, The power tube is mounted upright or upside down on the base plate.

7. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, The pins on the power transistor extend from the periphery of the power transistor.

8. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, Each of the power tubes is provided with an independent insulating heat dissipation layer, and an independent metal component is attached to the back of the insulating heat dissipation layer.

9. A highly integrated power module system composed of a single power transistor with double-sided heat dissipation as described in claim 1, characterized in that, All the power tubes are divided into at least one group, and in the same group, each power tube is provided with the same insulating heat dissipation layer; In the same group, each of the back sides of the insulating heat dissipation layer, facing the position of the power tube, is fitted with an independent metal component.

10. The high-integration power module system composed of a double-sided heat-dissipating power single tube as described in claim 1, characterized in that, All the power tubes are divided into at least one group, and in the same group, each power tube is provided with the same insulating heat dissipation layer; In the same group, the same metal component is attached to the back of the insulating heat dissipation layer.

11. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, The base plate is also equipped with active components and / or passive components.

12. A highly integrated power module system composed of a power single tube with double-sided heat dissipation as described in claim 4 or 5, characterized in that, The chip is one or more power chips.

13. A highly integrated power module system composed of a power single tube with double-sided heat dissipation as described in claim 4 or 5, characterized in that, The chip is an IGBT power chip and / or a SiC power chip.

14. The highly integrated power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, The number of control boards is not limited to one, and the control boards are distributed around and / or above the power tube.

15. A highly integrated power module system composed of a single power transistor with double-sided heat dissipation as described in claim 1, characterized in that, The control board is arranged parallel or perpendicular to the module composed of all the power tubes.

16. The high-integration power module system composed of a power single tube with double-sided heat dissipation as described in claim 1, characterized in that, Heat dissipation components are attached to the insulating heat dissipation layer.

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