Wafer transmission chamber and semiconductor transmission equipment
By designing a wafer transfer chamber that integrates calibration and heat exchange functions in a semiconductor transfer device, the problems of complex device structure and space occupation are solved, achieving efficient wafer cooling and position calibration, and improving production capacity.
Patent Information
- Application Number
- CN202423304128.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2034-12-31
AI Technical Summary
When existing semiconductor transmission equipment cools high-temperature wafers, the common cooling method requires the addition of a cooling cavity, which results in complex equipment structure, large space occupation, and limited layout space of process chambers, affecting production capacity.
Design a wafer transfer chamber that integrates calibration and heat exchange components. It can be installed separately or integrated into the chamber body to realize wafer position calibration and heat exchange functions, simplify the equipment structure, and provide space for the arrangement of process chambers.
By simplifying the structure, the production capacity of semiconductor transmission equipment has been improved, the flexibility and space utilization efficiency of the equipment have been enhanced, and the cooling requirements of wafers have been met.
Smart Images
Figure CN223872729U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor processing technology, specifically to a wafer transfer chamber and semiconductor transfer equipment. Background Technology
[0002] Semiconductor transport equipment is an automated device used in semiconductor manufacturing processes to transport and move wafers, and is particularly suitable for processes that require maintaining high cleanliness and vacuum environments.
[0003] Currently, semiconductor transport equipment mainly consists of a transport platform, which includes a vacuum transport chamber, a calibration chamber, and at least one process chamber. The vacuum transport chamber contains a vacuum manipulator that can transfer wafers between at least two chambers. The process chamber is primarily used for surface processing of the wafer, such as vapor deposition, etching, and ion implantation. In some processes, the wafer temperature is relatively high, requiring a cooling zone after processing. Otherwise, excessively high temperatures may damage the wafer's crystal structure, leading to defects and affecting its performance and yield.
[0004] Currently, the common method for cooling wafers is to add cooling chambers to semiconductor transmission equipment. However, this method is complex, occupies a lot of space, and in space-constrained environments, adding cooling chambers can only be achieved by reducing the number of process chambers. This, to some extent, occupies the layout space of the process chambers and limits the production capacity of semiconductor transmission equipment. Utility Model Content
[0005] The purpose of this application is to provide a wafer transport chamber that can both calibrate the wafer position and cool the wafer. Another purpose of this application is to provide a semiconductor transport device including the above-described wafer transport chamber.
[0006] This application provides a wafer transport cavity for a semiconductor transport device, including a cavity body forming an inner cavity. The wafer transport cavity further includes a calibration component and a heat exchange component, both of which are adaptable and installable to the cavity body.
[0007] The calibration component is used to calibrate the wafer position in the cavity;
[0008] The heat exchange assembly includes a heat exchange component for exchanging heat with the wafer in the cavity.
[0009] Compared with the existing technology of setting up a separate cooling cavity, in the embodiments of this application, the wafer transfer chamber can be adapted and installed with calibration components and heat exchange components. In this way, the calibration components or heat exchange components can be installed separately in the chamber body, or the calibration function or heat exchange function can be realized by integrating the calibration components and heat exchange components. That is, in the embodiments of this application, the wafer transfer chamber can realize both calibration and heat exchange functions by activating different functional components, which can greatly simplify the structure of semiconductor transfer equipment, provide space for the arrangement of process chambers, and help improve the production capacity of semiconductor transfer equipment.
[0010] In one example, the chamber body further has an opening, and the calibration assembly includes a carrier module at least partially located in the inner cavity for calibrating the position of the wafer. Both the carrier module and the heat exchange component are detachably mounted to the chamber body, and both the carrier module and the heat exchange component can be installed into or removed from the inner cavity through the opening of the opening.
[0011] In one example, the support module includes a first cover plate and a first support body, the first support body being located in the inner cavity and connected to the first cover plate, and the first cover plate being detachably installed in the opening.
[0012] In one example, the calibration assembly further includes a detection component for detecting the position of a wafer supported on the carrier module; the detection component is mounted on the chamber body, and the carrier module calibrates the position of the wafer based on the signal detected by the detection component.
[0013] In one example, the heat exchange component has several flow channels inside, and the inlet and outlet of the flow channels can be connected to a fluid pipeline located outside the inner cavity via pipes. The heat exchange component has a support surface that supports the wafer.
[0014] In one example, the heat exchange assembly further includes a second cover plate, which is detachably mounted to the opening, and the heat exchange component is connected to the second cover plate.
[0015] In one example, the heat exchange assembly further includes a flange installed between the heat exchange component and the second cover plate, and pipes connecting the inlet and outlet of the flow channel extend to the outside of the inner cavity through the central hole of the flange.
[0016] In one example, the heat exchange assembly further includes a second support body, which is a heat conductor. One side of the second support body is attached to the heat exchange component, and at least two mounting positions are provided on the other side of the second support body. Each mounting position accommodates at least one wafer, and the mounting positions are spaced apart along the axial direction of the wafer transfer cavity.
[0017] In one example, the second support includes a connecting plate that abuts against the heat exchange component. The connecting plate supports at least two support units, and each support unit forms a mounting position. The support units are spaced apart along the axial direction of the wafer transfer chamber. Each support unit is located on the side of the connecting plate away from the heat exchange component. Each support unit includes two support plates located on the same plane and spaced apart.
[0018] In one example, the heat exchange assembly further includes a flow valve for controlling the flow rate of fluid flowing into the flow channel of the heat exchange component;
[0019] Alternatively / and, the chamber body has an air extraction port for communicating with a vacuum pumping component to evacuate the inner cavity.
[0020] In one example, the opening is provided with a stepped hole, the stepped surface of the stepped hole facing away from the inner cavity, and the first cover plate is sealed to the stepped surface.
[0021] In one example, the calibration assembly includes a carrier module at least partially located within the cavity for calibrating the position of the wafer, and the heat exchange component is integrated into the carrier module.
[0022] This application also provides a semiconductor transport device, including a transport platform. The transport platform is provided with a vacuum transport chamber and the wafer transport chamber of any of the above-mentioned embodiments. The wafer transport chamber is disposed between the vacuum transport chamber and the holding device. The chamber body is integrally or separately disposed from the transport platform.
[0023] In one example, the number of wafer transfer chambers is at least two, and in a first usage state, some of the wafer transfer chambers are equipped with the heat exchange assembly, and some of the wafer transfer chambers are equipped with the calibration assembly;
[0024] Alternatively, in the second usage state, all of the wafer transfer chambers are equipped with the calibration component or the heat exchange component.
[0025] The semiconductor transmission device in this application includes the wafer transmission chamber described above, and therefore also has the technical effects of the wafer transmission chamber described above. Attached Figure Description
[0026] Figure 1 This is a structural block diagram of a semiconductor transmission device provided in an embodiment of this application;
[0027] Figure 2 for Figure 1 A partial structural diagram of the structure shown;
[0028] Figure 3 for Figure 2 Schematic diagram of cross section AA in the structure shown;
[0029] Figure 4 for Figure 2 Schematic diagram of the BB section in the structure shown;
[0030] Figure 5 for Figure 2 A schematic diagram of the heat exchange component in the structure shown;
[0031] Figure 6 for Figure 5 An exploded view of the heat exchange assembly shown.
[0032] in, Figures 1-6 The annotations in the accompanying drawings are explained as follows:
[0033] 100 Vacuum transfer chamber; 101 Channel; 102 Vacuum chamber;
[0034] 200 Wafer transfer chamber; 230 Chamber body; 201 Inner cavity; 202 Mounting base; 203 First pipeline; 204 Second pipeline; 205 Opening; 206 Connecting port; 210 Calibration component; 211 Bearing module; 2111 First support body; 2112 First cover plate; 212 Detection component; 213 Drive component; 220 Heat exchange component; 221 Heat exchange component; 222 Second cover plate; 223 Flange; 224 Second support body; 2241 Support plate; 2242 Connecting plate; 225 Screw;
[0035] 300 container holding equipment;
[0036] 400 vacuum robotic arm;
[0037] 500 transmission platform;
[0038] 60 wafers; Detailed Implementation
[0039] To enable those skilled in the art to better understand the technical solutions of the embodiments of this application, the embodiments of this application will be further described in detail below with reference to the accompanying drawings and specific examples.
[0040] Please refer to Figures 1 to 6 , Figure 1 This is a structural block diagram of a semiconductor transmission device provided in an embodiment of this application; Figure 2 for Figure 1 A partial structural diagram of the structure shown; Figure 3 for Figure 2 Schematic diagram of cross section AA in the structure shown; Figure 4 for Figure 2 Schematic diagram of the BB section in the structure shown; Figure 5 for Figure 2 A schematic diagram of the heat exchange component in the structure shown; Figure 6 for Figure 5 An exploded view of the heat exchange assembly shown.
[0041] This application provides a semiconductor transport device, including a transport platform 500. A vacuum transport chamber 100, a wafer transport chamber 200, and a process chamber are disposed on the transport platform 500. The vacuum transport chamber 100 is located between the wafer transport chamber 200 and the process chamber, i.e., the wafer transport chamber 200 and the process chamber are arranged circumferentially around the vacuum transport chamber 100. The number of process chambers can be one or more, and different process chambers can perform different processes, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, ion implantation, etc. The number of process chambers can be reasonably set according to actual applications. Connecting holes 101 that can be closed and opened are provided between the process chamber and the vacuum transport chamber 100, and between the wafer transport chamber 200 and the vacuum transport chamber 100.
[0042] In this embodiment, the wafer transfer chamber 200 has a chamber body 230, which can be integrated with or separate from the transfer platform 500. The accompanying drawings illustrate a specific example of the wafer transfer chamber 200's chamber body 230 being integrated with the transfer platform 500. Typically, the process chamber and the transfer platform 500 are separate. Figure 1 and Figure 2 The process chamber is not shown, but this does not prevent those skilled in the art from understanding and implementing the technical solutions described herein.
[0043] In this embodiment, the wafer transfer chamber 200 is disposed between the vacuum transfer chamber 100 and the container device (e.g., a vacuum lifting chamber). The wafer transfer chamber 200 also has a communication port 206 connecting to the container device, which can be opened or closed. The wafer transfer chamber 200 includes a chamber body 230 and a calibration assembly 210. The semiconductor transfer device has an atmospheric manipulator (not shown in the figure), which can transfer the wafer 600 in the container device 300 to the inner cavity 201 of the wafer transfer chamber 200, then close the vacuum transfer chamber 100, evacuate the wafer transfer chamber 200, and use the calibration assembly 210 in the wafer transfer chamber 200 to calibrate the position of the wafer. After the vacuuming and calibration work is completed, the channel 101 in the wafer transfer chamber 200 and the vacuum transfer chamber 100 is opened. The vacuum robot 400 in the vacuum chamber takes the wafer 600 out of the wafer transfer chamber 200 and sends it to other process chambers.
[0044] In other words, a vacuum robot 400 is installed inside the vacuum chamber, which enables the transfer of wafers between the wafer transfer chamber 200, the vacuum chamber, and the process chamber. The specific structure of the vacuum robot 400 will not be detailed in this article.
[0045] The wafer transfer chamber 200 in this embodiment further includes a heat exchange assembly 220. Both the calibration assembly 210 and the heat exchange assembly 220 are adaptable to and installed with the chamber body 230. The calibration assembly 210 is used to calibrate the wafer position within the chamber. The heat exchange assembly 220 includes a heat exchange component 221, which is used to exchange heat with the wafer in the chamber. That is, the heat exchange component 221 can heat or cool the wafer in the chamber.
[0046] The term "adaptive installation" means that both the calibration component 210 and the heat exchange component 220 can be installed on the chamber body 230. The calibration component 210 and the heat exchange component 220 can be integrated into the wafer transfer chamber 200 at the same time, or one of them can be installed in the wafer transfer chamber 200.
[0047] The wafer transfer chamber 200 can be used in three main ways: In the first working state, a calibration component is installed in the wafer transfer chamber 200 to calibrate the wafer; in the second working state, a heat exchange component 220 is installed in the wafer transfer chamber 200 to heat or cool the wafer; in the third working state, both the calibration component and the heat exchange component 220 are installed in the wafer transfer chamber 200, which can both calibrate the wafer position and heat or cool the wafer.
[0048] Compared with the prior art of setting a separate cooling chamber, in this embodiment, the wafer transfer chamber 200 can be adapted and installed with the calibration component 210 and the heat exchange component 220. This allows the calibration component 210 or the heat exchange component 220 to be installed separately in the chamber body 230, or the calibration function or the heat exchange function can be realized by integrating the calibration component 210 and the heat exchange component 220. That is, in this embodiment, the wafer transfer chamber 200 can realize both calibration and heat exchange functions by activating different functional components, which can greatly simplify the structure of the semiconductor transfer equipment, provide space for the arrangement of the process chamber, and help improve the production capacity of the semiconductor transfer equipment.
[0049] When the heat exchange component 221 is integrated onto the rotating platform (first support 2111) of the calibration component 210, the wafer placed in the inner cavity of the wafer transfer chamber 200 can be calibrated and cooled without disassembling the components in the wafer transfer chamber 200, which is beneficial to improving the working efficiency of the equipment. When either the calibration component 210 or the heat exchange component 220 is installed in the chamber body 230, either the calibration component 210 or the heat exchange component 220 can be selected to be installed in the chamber body 230 according to the needs, so as to meet the requirements of wafer position calibration or wafer cooling. In this way, the wafer transfer chamber 200 occupies less space, which is beneficial to the miniaturization of the equipment.
[0050] This application can meet the wafer cooling requirements by modifying the existing equipment calibration chamber.
[0051] In one specific embodiment, the chamber body 230 further has an opening 205. The calibration component 210 includes a support module 211 at least partially located within the inner cavity. The support module 211 is used to calibrate the position of the wafer. Both the support module 211 and the heat exchange component 221 are detachably mounted to the chamber body 230, and both the support module 211 and the heat exchange component 221 can be installed into or removed from the inner cavity through the opening 205 of the opening. The opening 205 can be formed in the bottom wall of the chamber body 230, which simplifies the structural design of the support module 211 and the heat exchange component 221 and facilitates installation and disassembly.
[0052] In this embodiment, when the wafer needs to be cooled or heated, the carrier module 211 can be disassembled from the inner cavity and taken out from the opening 205. Then, the heat exchange component 221 can be installed in the inner cavity. Of course, when the wafer position needs to be calibrated, the heat exchange component 221 can be disassembled from the chamber body 230 and the carrier module 211 can be installed in the chamber body 230. The device occupies little space and is flexible and convenient to use.
[0053] In this embodiment, the carrier module 211 may include a first cover plate 2112 and a first support body. The first support body is located in the inner cavity and connected to the first cover plate 2112. The first support body can be rotatably connected relative to the first cover plate 2112 to meet the requirements of wafer position adjustment. The first cover plate 2112 is detachably installed in the opening 205 and can be detachably installed in the cavity body 230 by screws. In this way, the first cover plate 2112 and the first support body form an integral unit, which is convenient for installation and disassembly. At the same time, the first cover plate 2112 can seal the opening 205, resulting in a simple structure.
[0054] A sealing ring can be provided between the first cover plate 2112 and the chamber body 230 to increase the sealing performance between them.
[0055] In this embodiment, the calibration component 210 further includes a detection component 212, which is used to detect the position of the wafer 600 supported on the carrier module 211. The detection component 212 is mounted on the chamber body 230, and the detection component 212 may be partially or entirely located outside the chamber body 230. As shown in the figure, a mounting base 202 is provided on the outer wall of the chamber body 230 for mounting the detection component 212. The detection component 212 can be electrically connected to a controller, which can be the main controller of the device or a separately set control component. The detection component 212 can be a laser sensor, which includes a laser emitting end and a receiving end. The emitting end is used to emit laser light, and the receiving end is used to receive the laser signal emitted by the emitting end. The laser sensor can detect the center position of the wafer or the calibration position on the wafer. The calibration position can be a notch or other marking symbol. The number of laser sensors can be one or more. For the specific structure and method of the laser sensor to realize wafer center position detection and calibration position detection, please refer to the prior art, which will not be elaborated here.
[0056] In this embodiment, the carrier module 211 calibrates the wafer's position based on the signal detected by the detection component 212. For example, the controller determines that the wafer's calibration position deviates from the target position based on the detection signal from the detection component 212. The controller sends a control command to the carrier module 211, which can adjust the wafer's position to bring the wafer's calibration position to the target position within the cavity. For example, the carrier module 211 includes a first support body 2111 and a driving component 213. The wafer 600 is supported on the first support body 2111, and the driving component 213 can drive the first support body 2111 to rotate around its own axis. The driving component 213 can be located outside the cavity 201, and its output shaft passes through the cavity body 230 and connects to the first support body 2111, thereby adjusting the wafer's deflection angle. The driving component 213 can be a motor. The driving component 213 can be directly or indirectly connected to the first support body 2111.
[0057] The adjustment of the wafer center position can be referenced as follows: Detection component 212 can detect the outer contour of the wafer. The controller determines the wafer center position based on the outer contour. When the determined wafer center position deviates from the set center position, the controller adjusts the operating parameters of the vacuum robot 400 or the atmospheric robot. For example, adjusting the operating parameters of the vacuum robot 400 ensures that when the vacuum robot 400 picks up a wafer from inside the wafer transfer chamber 200, the center position of the vacuum robot 400 coincides as closely as possible with the center position of the wafer. Furthermore, when adjusting the operating parameters of the atmospheric robot, the center position of the wafer should coincide as closely as possible with the set center position within the chamber when the atmospheric robot transfers the next wafer to the wafer transfer chamber 200.
[0058] In one specific embodiment, the heat exchange component is generally a disk with a predetermined thickness. The heat exchange component 221 has several flow channels inside, and the inlets and outlets of these channels can be connected to fluid pipelines located outside the inner cavity via pipes. The heat exchange component 221 has a support surface for supporting the wafer. The fluid introduced into the heat exchange component can be a liquid or a gas. In this embodiment, the heat exchange component 221 has a simple structure.
[0059] In this embodiment, the heat exchange assembly 220 further includes a second cover plate 222, which is detachably mounted on the opening 205. The heat exchange component 221 is connected to the second cover plate 222. In this embodiment, the heat exchange component 221 is assembled on the second cover plate 222 and can be installed or removed from the chamber body 230 via the second cover plate 222, resulting in high efficiency in disassembly and installation. The second cover plate 222 can be detachably connected to the chamber body 230 via screws.
[0060] In addition, a sealing component can be added between the second cover plate 222 and the chamber body 230 to increase the sealing between the two.
[0061] In this embodiment of the application, the heat exchange assembly 220 further includes a flange 223, which is installed between the heat exchange component 221 and the second cover plate 222. The pipes connecting the inlet and outlet of the flow channel extend to the outside of the inner cavity through the central hole of the flange 223. Figure 5 and Figure 6 The diagram shows a first pipe 203 and a second pipe 204. The first pipe 203 is connected to the inlet of the flow channel of the heat exchange component 221, and the second pipe 204 is connected to the outlet of the flow channel of the heat exchange component 221. The flange 223 has a simple structure, is lightweight, and facilitates the arrangement of the flow channel connection pipes.
[0062] In this embodiment, the heat exchange component 221 further includes a second support 224. The second support 224 has at least two mounting positions, each accommodating at least one wafer. The mounting positions are spaced apart along the axial direction of the wafer transfer cavity. The second support 224 is a heat conductor, such as metal or ceramic. One side of the second support 224 is in contact with the heat exchange component, resulting in a large contact area and good heat transfer effect.
[0063] In this embodiment, the second support 224 includes a connecting plate 2242, which abuts against the heat exchange component. The connecting plate 2242 supports at least two support units, each forming a mounting position. The support units are spaced apart along the axial direction of the wafer transfer chamber 200, and each support unit is located on the side of the connecting plate 2242 opposite to the heat exchange component. Each support unit includes two support plates 2241 located on the same plane and spaced apart. The wafer only partially abuts against the support plates 2241. This structure allows the second support 224 to hold multiple layers of wafers, and the two support plates 2241 in the same support unit support the wafer at two localized locations distributed radially. While ensuring stable wafer support, the second support 224 is also relatively lightweight.
[0064] Figure 6 The diagram shows two support units, namely, a connecting plate 2242 with two layers of support plates 2241.
[0065] In this embodiment, the heat exchange component 220 further includes a flow valve for controlling the flow rate of fluid flowing into the flow channel of the heat exchange component 221. The flow valve can be a manual valve or an automatic valve. Alternatively, a flow alarm component can be installed on the first or second pipeline. When a flow problem occurs in the first or second pipeline, the alarm component will issue an alarm signal to alert personnel that there is a problem with the equipment, thereby improving the safety of equipment use.
[0066] In this embodiment, the wafer transfer chamber 200 further includes a vacuum pumping assembly for evacuating the inner cavity. Specifically, the chamber body 230 has an air extraction port, and the external vacuum pumping assembly is connected to the air extraction port through a pipeline, enabling it to evacuate the inner cavity.
[0067] In this embodiment, the number of wafer transmission chambers 200 is at least two.
[0068] In the semiconductor transmission device, each wafer transmission chamber 200 can be flexibly configured with calibration components and heat exchange components 220. For example: in the first working state, all wafer transmission chambers 200 are equipped with calibration components and are used as calibration chambers to achieve wafer calibration; in the second working state, some wafer transmission chambers 200 are equipped with heat exchange components 220 to achieve wafer heating or cooling, and some wafer transmission chambers 200 are equipped with calibration components to achieve wafer calibration; in the third working state, each wafer transmission chamber 200 is equipped with heat exchange components 220 and is used as a cooling chamber to heat or cool the wafer.
[0069] Figure 1An embodiment of a semiconductor transport device is shown, having two wafer transport chambers 200, one of which houses a heat exchange assembly 220, and the other which houses a calibration assembly 210. Of course, the number of wafer transport chambers 200 is not limited to those described herein.
[0070] The semiconductor transmission device in this application embodiment includes the wafer transmission chamber 200 described above, and therefore also has the technical effects of the wafer transmission chamber 200 described above.
[0071] For other structures of semiconductor transmission devices, please refer to existing technologies; this article will not elaborate further.
[0072] The terms "first" and "second" used in this article are used only for the convenience of describing two or more structures or components that are identical or similar in structure and / or function, and do not indicate any special limitation on order and / or importance.
[0073] The above are merely preferred embodiments of this utility model. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principle of this utility model, and these improvements and modifications should also be considered within the scope of protection of this utility model.
Claims
1. A wafer transport chamber for use in semiconductor transport equipment, characterized in that, The wafer transfer chamber (200) includes a chamber body (230) forming an inner cavity, and further includes a calibration component (210) and a heat exchange component (220), both of which are adaptable to and installed within the chamber body (230); wherein, The calibration component (210) is used to calibrate the wafer position in the cavity; The heat exchange assembly (220) includes a heat exchange component (221) for exchanging heat with the wafer in the cavity.
2. The wafer transfer chamber according to claim 1, characterized in that, The chamber body (230) also has an opening, and the calibration component (210) includes a support module (211) located at least partially in the inner cavity for calibrating the position of the wafer. The support module (211) and the heat exchange component (221) are detachably mounted to the chamber body (230), and both the support module (211) and the heat exchange component (221) can be installed into or removed from the inner cavity through the opening (205) of the opening.
3. The wafer transfer chamber according to claim 2, characterized in that, The bearing module (211) includes a first cover plate (2112) and a first support body (2111). The first support body is located in the inner cavity and connected to the first cover plate (2112). The first cover plate (2112) is detachably installed in the opening.
4. The wafer transfer chamber according to any one of claims 2 or 3, characterized in that, The calibration component (210) further includes a detection component (212) for detecting the position of the wafer supported on the carrier module (211); the detection component (212) is installed on the chamber body (230), and the carrier module (211) calibrates the position of the wafer according to the signal detected by the detection component (212).
5. The wafer transport chamber according to claim 3, characterized in that, The heat exchange component (221) has several flow channels inside, and the inlet and outlet of the flow channels can be connected to a fluid pipeline located outside the inner cavity through a pipe. The heat exchange component (221) has a support surface that supports the wafer.
6. The wafer transfer chamber according to claim 5, characterized in that, The heat exchange assembly (220) further includes a second cover plate (222), which is detachably installed in the opening, and the heat exchange component (221) is connected to the second cover plate (222).
7. The wafer transport chamber according to claim 6, characterized in that, The heat exchange assembly (220) also includes a flange (223) installed between the heat exchange component (221) and the second cover plate (222), and the pipes connecting the inlet and outlet of the flow channel extend to the outside of the inner cavity through the central hole of the flange (223).
8. The wafer transfer chamber according to claim 5, characterized in that, The heat exchange assembly further includes a second support (224), which is a heat conductor. One side of the second support (224) is in contact with the heat exchange component, and at least two mounting positions are provided on the other side of the second support (224). Each mounting position accommodates at least one wafer, and the mounting positions are spaced apart along the axial direction of the wafer transfer cavity.
9. The wafer transport chamber according to claim 8, characterized in that, The second support (224) includes a connecting plate (2242) that is in contact with the heat exchange component. The connecting plate (2242) supports at least two support units, and each support unit forms a mounting position. Each support unit is arranged at intervals along the axial direction of the wafer transfer chamber (200). Each support unit is located on the side of the connecting plate (2242) away from the heat exchange component. Each support unit includes two support plates (2241) located on the same plane and spaced apart.
10. The wafer transfer chamber according to claim 5, characterized in that, The heat exchange assembly (220) also includes a flow valve for controlling the flow rate of fluid flowing into the flow channel of the heat exchange component (221); Alternatively / and, the chamber body (230) has an air extraction hole for communicating with a vacuum pumping component to evacuate the inner cavity.
11. The wafer transfer chamber according to claim 5, characterized in that, The opening is provided with a stepped hole, the stepped surface of which faces away from the inner cavity, and the first cover plate (2112) is sealed to the stepped surface.
12. The wafer transfer chamber according to claim 1, characterized in that, The calibration component (210) includes a carrier module (211) located at least partially in the cavity for calibrating the position of the wafer, and the heat exchange component (221) is integrated into the carrier module (211).
13. A semiconductor transmission device, characterized in that, The device includes a transmission platform, on which a vacuum transmission chamber (100) and a wafer transmission chamber (200) according to any one of claims 1 to 12 are provided. The wafer transmission chamber (200) is disposed between the vacuum transmission chamber (100) and the container device. The chamber body (230) is integrally or separately disposed from the transmission platform.
14. The semiconductor transmission device according to claim 13, characterized in that, The number of wafer transfer chambers (200) is at least two. In a first usage state, some of the wafer transfer chambers (200) are equipped with the heat exchange assembly (220), and some of the wafer transfer chambers (200) are equipped with the calibration assembly (210). Alternatively, in the second usage state, all of the wafer transfer chambers (200) are equipped with the calibration assembly (210) or the heat exchange assembly (220).