High-linearity HBT (Heterojunction Bipolar Transistor) power amplification circuit with temperature compensation

Abstract

The utility model relates to the technical field of radio frequency front ends, in particular to a high-linearity HBT (Heterojunction Bipolar Transistor) power amplification circuit with temperature compensation. According to the circuit, the linear improvement is realized through the synergistic effect of the bias module and the pre-distortion module, and the high linearity of the circuit is realized through the anti-phase offset of the nonlinear component phases of the two modules; the temperature compensation unit is arranged on the bias module, so that high linearity can be realized in a relatively large working range.

Description

Technical Field

[0001] This utility model relates to the field of radio frequency front-end technology, and more specifically, to a temperature-compensated high-linearity HBT power amplifier circuit. Background Technology

[0002] With the development of communication technology, the instantaneous bandwidth of signals is becoming wider and wider, modulation techniques are becoming more complex, and the peak-to-average power ratio of signals is also increasing. HBT power amplifiers require linearized bias circuits to achieve high linearity, and at the same time, HBT power amplifiers need temperature compensation circuits to achieve good circuit performance under different ambient temperatures.

[0003] Existing HBT power amplifier circuits only have simple temperature compensation and simple linearization, resulting in poor linearity at rated output power. Utility Model Content

[0004] This invention improves upon existing HBT power amplifier circuits to achieve excellent linearity at rated output power, while also providing temperature compensation for performance under different operating conditions. Linearity is improved through the synergistic effect of the bias module and the predistortion module, and high linearity is achieved by canceling out the phase of the nonlinear components of the two modules.

[0005] The specific implementation details of this utility model are as follows:

[0006] A temperature-compensated high-linearity HBT power amplifier circuit includes a predistortion module, a bias module, and an amplification module;

[0007] The input terminal of the predistortion module receives an radio frequency signal, and the bias terminal of the predistortion module is connected to the output terminal of the bias module.

[0008] The output terminal of the amplification module outputs a radio frequency amplified signal;

[0009] The input terminal of the bias module is connected to the power supply;

[0010] The bias module is used to generate a bias signal based on the input power signal;

[0011] The predistortion module is used to generate a first bias signal and a second bias signal with phase inversion of nonlinear components based on the radio frequency signal and the bias signal.

[0012] The amplification module is used to generate an RF amplified signal based on the predistortion signal, the first bias signal, and the second bias signal.

[0013] To better realize this utility model, the pre-distortion module further includes transistor QRF3, capacitor C7, inductor L4, inductor L3, capacitor C6, resistor R6, and capacitor C8.

[0014] The base of the transistor QRF3 is input with an RF signal, the emitter of the transistor QRF3 is connected to ground, and the collector of the transistor QRF3 is connected to the output of the inductor L3.

[0015] The input terminal of the inductor L3 is connected to the power supply;

[0016] One end of the capacitor C6 is connected between the inductor L3 and the power supply, and the other end is connected to the ground.

[0017] One end of the capacitor C7 is connected between the collector of QRF3 and the inductor L3, and the other end is connected to the input terminal of the amplifier module.

[0018] One end of the inductor L4 is connected between the output terminal of the capacitor C7 and the input terminal of the amplifier module;

[0019] One end of the resistor R6 is connected to the base of QRF3, and the other end of the resistor R6 is connected to the capacitor C8.

[0020] The end of capacitor C8 that is not connected to resistor R6 is connected between capacitor C7 and inductor L3.

[0021] To better realize this utility model, the bias module further includes a linearization unit, a temperature compensation unit, and a ballast unit;

[0022] The linearization unit includes a resistor R1, a capacitor C2, an inductor L1, a capacitor C1, a transistor Q1, a transistor Q6, a resistor R5, and a capacitor C3;

[0023] The collector of transistor Q1 is connected to the power supply, the emitter of transistor Q1 is connected between resistor R1 and the temperature compensation unit, and the base of transistor Q1 is connected to the temperature compensation module.

[0024] The collector of transistor Q6 is connected to a grounded resistor R5 and a grounded capacitor C3. The emitter of transistor Q6 is connected between capacitor C1 and the ballast unit. The base of transistor Q6 is connected to the emitter of transistor Q6.

[0025] One end of the inductor L1 is connected between the emitter of the transistor Q1 and the resistor R1, and the other end of the inductor L1 is connected between the capacitor C1 and the ballast unit.

[0026] One end of the capacitor C2 is connected between the base of the transistor Q1 and the temperature compensation unit, and the other end is connected to the ground.

[0027] To better realize this utility model, the temperature compensation unit further includes transistors Q2, Q3, Q4, and Q5, resistors R3 and R4.

[0028] One end of the resistor R4 is connected to the power supply, and the other end is connected to the base of transistor Q1, the collector of transistor Q2, and the base of transistor Q3.

[0029] One end of the resistor R3 is connected to the power supply, and the other end is connected to the collector of transistor Q5 and the base of transistor Q4.

[0030] The base of transistor Q2 is connected to the base of transistor Q5, resistor R1, inductor L1, and emitter of transistor Q1. The emitter of transistor Q2 is connected to ground. The collector of transistor Q2 is connected to the base of transistor Q1.

[0031] The base of transistor Q3 is connected to the base of transistor Q1 and the collector of transistor Q3, and the emitter of transistor Q3 is connected to the collector of transistor Q4.

[0032] The base of transistor Q4 is connected to the collector of transistor Q5, and the emitter of transistor Q4 is connected to the emitter and ground of transistor Q5.

[0033] The emitter of the transistor Q5 is connected to ground.

[0034] To better realize this utility model, the ballast unit further includes a resistor R2;

[0035] One end of the resistor R2 is connected to the capacitor C1, the inductor L1, the base of the transistor Q6, and the emitter of the transistor Q6. The other end of the resistor R2 is connected between the radio frequency signal input terminal and the base of the transistor QRF3.

[0036] To better realize this utility model, the amplification module further includes transistor QRF1, transistor QRF2, inductor L2, and capacitor C9;

[0037] One end of the inductor L2 is connected to the power supply, and the other end is connected to the collector of transistor QRF1 and the collector of transistor QRF2.

[0038] The base of the transistor QRF1 is connected to resistor R2 and capacitor C7, and the emitter of the transistor QRF1 is connected to ground.

[0039] The base of transistor QRF2 is connected to resistor R2 and capacitor C7, and the emitter of transistor QRF2 is connected to ground.

[0040] One end of the capacitor C9 is connected between the power supply and the inductor L2, and the other end is connected to the ground.

[0041] To better realize this utility model, the pre-distortion module further includes capacitor C4 and capacitor C5;

[0042] One end of capacitor C4 is connected between capacitor C7 and inductor L4, and the other end is connected between resistor R2 and the base of transistor QRF1.

[0043] One end of capacitor C5 is connected between capacitor C7 and inductor L4, and the other end is connected between resistor R2 and the base of transistor QRF2.

[0044] This utility model has the following beneficial effects:

[0045] (1) This utility model improves linearity by working together with the bias module and the predistortion module, and achieves high linearity of the circuit by canceling out the phase of the nonlinear components of the two modules.

[0046] (2) By setting a temperature compensation unit on the bias module, this utility model can achieve high linearity over a large working range. Attached Figure Description

[0047] Figure 1 The schematic diagram of the bias circuit with temperature compensation and linearization provided by this utility model.

[0048] Figure 2 The schematic diagram of the power amplifier circuit provided by this utility model. Detailed Implementation

[0049] To more clearly illustrate the technical solutions of the embodiments of this utility model, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the described embodiments are only some embodiments of this utility model, not all embodiments, and therefore should not be regarded as a limitation on the scope of protection. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0050] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "set up," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0051] Example 1:

[0052] This utility model proposes a temperature-compensated high-linearity HBT power amplifier circuit, including a predistortion module, a bias module, and an amplification module;

[0053] The input terminal of the predistortion module receives an radio frequency signal, and the bias terminal of the predistortion module is connected to the output terminal of the bias module.

[0054] The output terminal of the amplification module outputs a radio frequency amplified signal;

[0055] The input terminal of the bias module is connected to the power supply;

[0056] The bias module is used to generate a bias signal based on the input power signal;

[0057] The predistortion module is used to generate a first bias signal and a second bias signal with phase inversion of nonlinear components based on the radio frequency signal and the bias signal.

[0058] The amplification module is used to generate an RF amplified signal based on the predistortion signal, the first bias signal, and the second bias signal.

[0059] Working principle: This embodiment improves upon the existing HBT power amplifier circuit to achieve excellent linearity at the rated output power, while also achieving temperature compensation for performance under different operating environments. The linearity is improved through the synergistic effect of the bias module and the predistortion module, and the high linearity of the circuit is achieved by canceling out the phase of the nonlinear components of the two modules.

[0060] Example 2:

[0061] This embodiment is based on the above embodiment 1, such as... Figure 2 As shown, the predistortion module is described in detail with reference to a specific embodiment.

[0062] The predistortion module includes transistor QRF3, capacitor C7, inductor L4, inductor L3, capacitor C6, resistor R6, and capacitor C8.

[0063] The base of the transistor QRF3 is input with an RF signal, the emitter of the transistor QRF3 is connected to ground, and the collector of the transistor QRF3 is connected to the output of the inductor L3.

[0064] The input terminal of the inductor L3 is connected to the power supply;

[0065] One end of the capacitor C6 is connected between the inductor L3 and the power supply, and the other end is connected to the ground.

[0066] One end of the capacitor C7 is connected between the collector of QRF3 and the inductor L3, and the other end is connected to the input terminal of the amplifier module.

[0067] One end of the inductor L4 is connected between the output terminal of the capacitor C7 and the input terminal of the amplifier module;

[0068] One end of the resistor R6 is connected to the base of QRF3, and the other end of the resistor R6 is connected to the capacitor C8.

[0069] The end of capacitor C8 that is not connected to resistor R6 is connected between capacitor C7 and inductor L3.

[0070] The pre-distortion module also includes capacitors C4 and C5;

[0071] One end of capacitor C4 is connected between capacitor C7 and inductor L4, and the other end is connected between resistor R2 and the base of transistor QRF1.

[0072] One end of capacitor C5 is connected between capacitor C7 and inductor L4, and the other end is connected between resistor R2 and the base of transistor QRF2.

[0073] Working principle: In this embodiment, a pre-distortion circuit is constructed using transistor QRF3, capacitor C7, inductor L4, capacitor C4, and capacitor C5. This circuit generates distortion characteristics that are opposite to the nonlinearity of the final stage QRF1 and QRF2, thereby achieving linearity improvement.

[0074] The other parts of this embodiment are the same as those in Embodiment 1 above, so they will not be described again.

[0075] Example 3:

[0076] This embodiment is based on any one of Embodiments 1-2 above, such as Figure 1 As shown, the specific structure of the bias module is explained in detail.

[0077] The bias module includes a linearization unit, a temperature compensation unit, and a ballast unit;

[0078] The linearization unit includes a resistor R1, a capacitor C2, an inductor L1, a capacitor C1, a transistor Q1, a transistor Q6, a resistor R5, and a capacitor C3;

[0079] The collector of transistor Q1 is connected to the power supply, the emitter of transistor Q1 is connected between resistor R1 and the temperature compensation unit, and the base of transistor Q1 is connected to the temperature compensation module.

[0080] The collector of transistor Q6 is connected to a grounded resistor R5 and a grounded capacitor C3. The emitter of transistor Q6 is connected between capacitor C1 and the ballast unit. The base of transistor Q6 is connected to the emitter of transistor Q6.

[0081] One end of the inductor L1 is connected between the emitter of the transistor Q1 and the resistor R1, and the other end of the inductor L1 is connected between the capacitor C1 and the ballast unit.

[0082] One end of the capacitor C2 is connected between the base of the transistor Q1 and the temperature compensation unit, and the other end is connected to the ground.

[0083] The ballast unit includes a resistor R2;

[0084] One end of the resistor R2 is connected to the capacitor C1, the inductor L1, the base of the transistor Q6, and the emitter of the transistor Q6. The other end of the resistor R2 is connected between the radio frequency signal input terminal and the base of the transistor QRF3.

[0085] Working principle: In this embodiment, resistor R2 in the bias circuit is the base ballast resistor, which prevents the RF transistor current from collapsing. Resistor R1, capacitor C2, inductor L1, capacitor C2, transistor Q1, transistor Q6, resistor R5, and capacitor C3 in the bias circuit constitute a linearization circuit. By adjusting the values ​​of resistor R1, capacitor C1, inductor L1, capacitor C2, resistor R5, and capacitor C3, the bias state under large-signal conditions and the AMAM / AMPM characteristics of the circuit can be changed, thereby achieving high linearity of the circuit.

[0086] The other parts of this embodiment are the same as any one of the above embodiments 1-2, so they will not be described again.

[0087] Example 4:

[0088] This embodiment is based on any one of embodiments 1-3 above, such as Figure 2 As shown, the specific structure of the amplification module is explained in detail.

[0089] The amplification module includes transistor QRF1, transistor QRF2, inductor L2, and capacitor C9;

[0090] One end of the inductor L2 is connected to the power supply, and the other end is connected to the collector of transistor QRF1 and the collector of transistor QRF2.

[0091] The base of the transistor QRF1 is connected to resistor R2 and capacitor C7, and the emitter of the transistor QRF1 is connected to ground.

[0092] The base of transistor QRF2 is connected to resistor R2 and capacitor C7, and the emitter of transistor QRF2 is connected to ground.

[0093] One end of the capacitor C9 is connected between the power supply and the inductor L2, and the other end is connected to the ground.

[0094] Working principle: In this embodiment, the RF amplifier circuit consists of RF transistors QRF1 and QRF2 connected together. The bias circuit structure of QRF1 and QRF2 is shown in [link to documentation]. Figure 1 The components are the same, but the specific component values ​​in the bias circuit differ. By adjusting these differences in component values, the nonlinear components of QRF1 and QRF2 are out of phase, achieving high linearity.

[0095] The other parts of this embodiment are the same as any one of the embodiments 1-3 above, so they will not be described again.

[0096] Example 5:

[0097] This embodiment is based on any one of embodiments 1-4 above, such as Figure 1 As shown, the specific structure of the temperature compensation unit is described in detail.

[0098] The temperature compensation unit includes transistors Q2, Q3, Q4, and Q5, resistors R3 and R4;

[0099] One end of the resistor R4 is connected to the power supply, and the other end is connected to the base of transistor Q1, the collector of transistor Q2, and the base of transistor Q3.

[0100] One end of the resistor R3 is connected to the power supply, and the other end is connected to the collector of transistor Q5 and the base of transistor Q4.

[0101] The base of transistor Q2 is connected to the base of transistor Q5, resistor R1, inductor L1, and emitter of transistor Q1. The emitter of transistor Q2 is connected to ground. The collector of transistor Q2 is connected to the base of transistor Q1.

[0102] The base of transistor Q3 is connected to the base of transistor Q1 and the collector of transistor Q3, and the emitter of transistor Q3 is connected to the collector of transistor Q4.

[0103] The base of transistor Q4 is connected to the collector of transistor Q5, and the emitter of transistor Q4 is connected to the emitter and ground of transistor Q5.

[0104] The emitter of the transistor Q5 is connected to ground.

[0105] Working principle: When the temperature rises, the current flowing through QRF1 / QRF2 increases, and the voltage at point AB also increases, causing the VBE of transistor Q5 to increase, which in turn increases the current through resistor R3. Since point AC is a constant voltage point, the current flowing through Q3 and R4 also increases, causing the voltage at point AA to decrease. This reduces the current through transistors Q1 and QRF1 / QRF2, thus achieving the goal of temperature compensation.

[0106] The other parts of this embodiment are the same as any one of the embodiments 1-4 above, so they will not be described again.

[0107] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model in any way. Any simple modifications or equivalent changes made to the above embodiments based on the technical essence of the present utility model shall fall within the protection scope of the present utility model.

Claims

1. A temperature-compensated, high-linearity HBT power amplifier circuit, characterized in that, Includes a predistortion module, a bias module, and an amplification module; The input terminal of the predistortion module receives an radio frequency signal, and the bias terminal of the predistortion module is connected to the output terminal of the bias module. The output terminal of the amplification module outputs a radio frequency amplified signal; The input terminal of the bias module is connected to the power supply; The bias module is used to generate a bias signal based on the input power signal; The predistortion module is used to generate a first bias signal and a second bias signal with phase inversion of nonlinear components based on the radio frequency signal and the bias signal. The amplification module is used to generate an RF amplified signal based on the predistortion signal, the first bias signal, and the second bias signal.

2. The temperature-compensated high-linearity HBT power amplifier circuit according to claim 1, characterized in that, The predistortion module includes transistor QRF3, capacitor C7, inductor L4, inductor L3, capacitor C6, resistor R6, and capacitor C8; The base of the transistor QRF3 is input with an RF signal, the emitter of the transistor QRF3 is connected to ground, and the collector of the transistor QRF3 is connected to the output of the inductor L3. The input terminal of the inductor L3 is connected to the power supply; One end of the capacitor C6 is connected between the inductor L3 and the power supply, and the other end is connected to the ground. One end of the capacitor C7 is connected between the collector of QRF3 and the inductor L3, and the other end is connected to the input terminal of the amplifier module. One end of the inductor L4 is connected between the output terminal of the capacitor C7 and the input terminal of the amplifier module; One end of the resistor R6 is connected to the base of QRF3, and the other end of the resistor R6 is connected to the capacitor C8. The end of capacitor C8 that is not connected to resistor R6 is connected between capacitor C7 and inductor L3.

3. The temperature-compensated high-linearity HBT power amplifier circuit according to claim 2, characterized in that, The bias module includes a linearization unit, a temperature compensation unit, and a ballast unit; The linearization unit includes a resistor R1, a capacitor C2, an inductor L1, a capacitor C1, a transistor Q1, a transistor Q6, a resistor R5, and a capacitor C3; The collector of transistor Q1 is connected to the power supply, the emitter of transistor Q1 is connected between resistor R1 and the temperature compensation unit, and the base of transistor Q1 is connected to the temperature compensation module. The collector of transistor Q6 is connected to a grounded resistor R5 and a grounded capacitor C3. The emitter of transistor Q6 is connected between capacitor C1 and the ballast unit. The base of transistor Q6 is connected to the emitter of transistor Q6. One end of the inductor L1 is connected between the emitter of the transistor Q1 and the resistor R1, and the other end of the inductor L1 is connected between the capacitor C1 and the ballast unit. One end of the capacitor C2 is connected between the base of the transistor Q1 and the temperature compensation unit, and the other end is connected to the ground.

4. The temperature-compensated high-linearity HBT power amplifier circuit according to claim 3, characterized in that, The temperature compensation unit includes transistors Q2, Q3, Q4, and Q5, resistors R3 and R4; One end of the resistor R4 is connected to the power supply, and the other end is connected to the base of transistor Q1, the collector of transistor Q2, and the base of transistor Q3. One end of the resistor R3 is connected to the power supply, and the other end is connected to the collector of transistor Q5 and the base of transistor Q4. The base of transistor Q2 is connected to the base of transistor Q5, resistor R1, inductor L1, and emitter of transistor Q1. The emitter of transistor Q2 is connected to ground. The collector of transistor Q2 is connected to the base of transistor Q1. The base of transistor Q3 is connected to the base of transistor Q1 and the collector of transistor Q3, and the emitter of transistor Q3 is connected to the collector of transistor Q4. The base of transistor Q4 is connected to the collector of transistor Q5, and the emitter of transistor Q4 is connected to the emitter and ground of transistor Q5. The emitter of the transistor Q5 is connected to ground.

5. A temperature-compensated high-linearity HBT power amplifier circuit according to claim 3, characterized in that, The ballast unit includes a resistor R2; One end of the resistor R2 is connected to the capacitor C1, the inductor L1, the base of the transistor Q6, and the emitter of the transistor Q6. The other end of the resistor R2 is connected between the radio frequency signal input terminal and the base of the transistor QRF3.

6. The temperature-compensated high-linearity HBT power amplifier circuit according to claim 5, characterized in that, The amplification module includes transistor QRF1, transistor QRF2, inductor L2, and capacitor C9; One end of the inductor L2 is connected to the power supply, and the other end is connected to the collector of transistor QRF1 and the collector of transistor QRF2. The base of the transistor QRF1 is connected to resistor R2 and capacitor C7, and the emitter of the transistor QRF1 is connected to ground. The base of transistor QRF2 is connected to resistor R2 and capacitor C7, and the emitter of transistor QRF2 is connected to ground. One end of the capacitor C9 is connected between the power supply and the inductor L2, and the other end is connected to the ground.

7. A temperature-compensated high-linearity HBT power amplifier circuit according to claim 6, characterized in that, The pre-distortion module also includes capacitors C4 and C5; One end of capacitor C4 is connected between capacitor C7 and inductor L4, and the other end is connected between resistor R2 and the base of transistor QRF1. One end of capacitor C5 is connected between capacitor C7 and inductor L4, and the other end is connected between resistor R2 and the base of transistor QRF2.

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