Refrigeration structure and packaging structure of two-dimensional array type silicon detector
By using a dual-layer microfluidic structure and a herringbone groove design, the problems of detection dead zone and uneven cooling between two-dimensional array silicon detector modules are solved, achieving efficient and uniform cooling and improving the performance and reliability of the detector.
Patent Information
- Application Number
- CN202520059990.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-10
- Publication Date
- 2026-02-10
- Estimated Expiration
- 2035-01-10
AI Technical Summary
Existing two-dimensional array silicon detectors have detection dead zones between modules and are difficult to cool uniformly, which affects detection performance and reliability.
The system employs a dual-layer microchannel structure, forming uniformly distributed microchannels through silicon-silicon bonding and anodic bonding. Combined with a herringbone groove design, it ensures that the cooling medium is evenly distributed and circulated between the detector modules, reducing flow resistance and improving cooling efficiency.
This achieves efficient and uniform cooling of the silicon detector module, reduces the detection dead zone area, and improves the anti-interference capability of signal transmission and the overall performance of the detector.
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Figure CN223899603U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of silicon detector manufacturing and integration, and relates to a cooling structure and packaging structure of a two-dimensional array silicon detector. Background Technology
[0002] Two-dimensional array silicon detectors are based on modularly designed silicon-based array detection systems (Moser H., 2009. Silicon detector systems in high energy physics. Progress in Particle and Nuclear Physics, 63(1):186-237.). Each detector module is compactly arranged in a specific way on a two-dimensional plane, meeting the detection requirements of rays or particles in terms of position, time and energy with excellent temporal / spatial resolution and high detection efficiency.This planar array detection system has applications in particle physics (Allport P., 2019. Applications of Silicon Strip and Pixel-Based Particle Tracking Detectors. Nature Reviews Physics, 1(1): 567-576.), astronomical observation (Cadu A. et al., 2013. The Use of Silicon Photomultipliers for Very High Energy Gamma Ray Astronomy: the optical issues. Experimental Astronomy, 35(3): 459-467.), synchrotron radiation sources (Zhang J. et al., 2020a. HEPS-BPIX2 The Hybrid Pixel Detector Upgrade for High Energy PhotonSource in China. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers Detectors and Associated Equipment, 958: 162488.), and medical imaging (Spahn M., 2013. X-ray detectors in medical imaging. Nuclear Instruments and Methods in Silicon detectors are widely used in various fields, including Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 731:57-63. and industrial inspection (Wieghold S. et al., 2017. Crack detection in crystalline silicon solar cells using dark-field imaging. Energy Procedia, 124:526-531.). The core component of a silicon detector is its front-end, which consists of a silicon sensor composed of a large number of micron-sized detection units arranged in an orderly manner, an ASIC that acquires and processes the silicon sensor signal, and a front-end electronics substrate used for high-voltage power supply to the silicon sensor and signal fan-out from the ASIC.The packaging structure between the three components is usually extremely compact in space, which can significantly reduce the signal transmission distance between them, improve the detector's ability to resist electromagnetic interference in space, ensure signal quality and improve detection response speed. However, because silicon sensors are easily affected by high-power ASICs, their surface temperature increases significantly.
[0003] The surface temperature of silicon detectors is one of the key factors determining their detection performance. As temperature increases, the signal-to-noise ratio, sensitivity, temporal resolution, and energy resolution of silicon detectors all decrease (Romagnoli G., 2016. Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors. PhD diss., Universitàdegli Studi di Genova Facoltàdi Ingegneria.). Simultaneously, because silicon detectors are frequently exposed to high-energy particle environments, they are more susceptible to radiation damage under high-temperature conditions, reducing the reliability and lifespan of the detection equipment (Garutti E. et al., 2019. Radiation damage of SiPMs. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers Detectors and Associated Equipment, 926:69-84.). Furthermore, to meet the detection requirements of different applications of silicon detectors, the temperature differences between their individual units must not be too large to ensure that the performance of each detection unit is approximately consistent.
[0004] To reduce the surface temperature of detectors and improve their performance and reliability, the fabrication of cooling structures for two-dimensional array silicon detectors using MEMS fabrication processes has been extensively studied. The advantages of this two-dimensional array silicon detector cooling structure are twofold: firstly, its compact and thin design allows for integration between the silicon sensor, ASIC, and circuit board, avoiding interference with the silicon sensor during X-ray or particle detection while achieving efficient cooling of the detector module with a shorter heat transfer path, lower thermal resistance, and higher cooling efficiency; secondly, the heat sink is made of silicon or glass, and its coefficient of thermal expansion should be close to or the same as that of the silicon sensor and ASIC to avoid large stresses or even warping deformation of the detector module due to temperature changes. However, to ensure a uniform microchannel structure in the detector module and achieve efficient and uniform cooling, a common design approach is to design a larger silicon microchannel heat sink, with the detector module placed on the uniform microchannel structure of the heat sink, such as... Figure 1 As shown, this approach inevitably results in excessively large dead zones between detector modules. If the size of the silicon microchannel heat sink is the same as the size of the detector module, it is difficult to ensure the thermal uniformity of the detector module's cooling due to the areas near the inlet and outlet of the microchannel heat sink where microchannels cannot be arranged.
[0005] This patent attempts to provide a microchannel heat sink for array-type silicon detectors, aiming to reduce the detection dead zone between modules while achieving efficient and uniform cooling for each detector module. Utility Model Content
[0006] This utility model relates to a cooling structure and packaging structure for a two-dimensional array silicon detector, which aims to reduce the detection dead zone between modules while achieving efficient and uniform cooling for each detector module.
[0007] The technical solution of this utility model is as follows:
[0008] A cooling structure for a two-dimensional array silicon detector is characterized by comprising a silicon substrate 11, a silicon-based flow divider 12, a cover plate 13, and two water inlet pipes 14; the silicon substrate 11 and the silicon-based flow divider 12 form a first layer of microchannels through a silicon-silicon bonding process; the silicon-based flow divider 12 and the cover plate 13 form a second layer of microchannels through anodic bonding, which is used to distribute the incoming cooling medium and receive the returning cooling medium to each channel in the first layer of microchannels; the two water inlet pipes 14 are respectively connected to the cooling medium input and output ports on the cover plate 13, which are used to provide circulating cooling medium for the microchannel heat sink.
[0009] Furthermore, the silicon substrate 11 is provided with N parallel straight microchannel grooves 15, each of which has cylindrical blind holes at both ends serving as inlet 16 and outlet 17, respectively; the silicon-based distribution plate 12 is provided with N inlet straight microchannel grooves 20, N outlet straight microchannel grooves 21, an inlet distribution groove 18, and an outlet confluence groove 19 on one side; the inlet distribution groove 18 is connected to the inlet of each inlet straight microchannel groove 20, and is used to distribute the cooling medium to each inlet. The straight microchannel channel 20; the outlet confluence channel 19 is connected to the outlet of each outlet straight microchannel channel 21 and is used to receive the cooling medium returning from each inlet straight microchannel channel 20; the outlet of each inlet straight microchannel channel 20 is connected to the inlet 16 of a corresponding straight microchannel channel 15, and the inlet of each outlet straight microchannel channel 21 is connected to the outlet 17 of a corresponding straight microchannel channel 15; the cover plate 13 is provided with an inlet hole 23 and an outlet hole 24 as input and output ports for the cooling medium.
[0010] Furthermore, the silicon-based flow divider 12 includes two symmetrically placed herringbone-shaped grooves, one herringbone-shaped groove serving as the inlet flow divider 18 and the other herringbone-shaped groove serving as the outlet flow combiner 19; the area between the two herringbone-shaped grooves is the injection and return area of the cooling medium, the outer area of the inlet flow divider 18 is provided with the N inlet straight microchannel grooves 20, the outer area of the outlet flow combiner 19 is provided with the N outlet straight microchannel grooves 21, and the positions of the water inlet hole 23 and the water outlet hole 24 correspond to the injection and return area of the cooling medium.
[0011] Furthermore, the thickness of the silicon substrate 11 is 200um-500um; the width of the straight microchannel groove 15 is 100um-400um and the depth is 100um-400um, and the spacing between adjacent straight microchannel grooves 15 is greater than or equal to the width of the straight microchannel groove 15.
[0012] Furthermore, the outlet of the outlet straight microchannel groove 21 and the outlet of the inlet straight microchannel groove 20 are both cylindrical through holes 22.
[0013] Furthermore, the thickness of the silicon-based flow divider 12 is 200um-500um, the width of the inlet straight microchannel groove 20 is 100um-400um, the width of the outlet straight microchannel groove 21 is 100um-400um, the width of the inlet flow divider 18 is 300um-1000um, the width of the outlet flow combiner 19 is 300um-1000um, and the thickness of the cover plate 13 is 100um-300um.
[0014] A packaging structure for an array-type silicon detector is characterized by comprising the aforementioned cooling structure of a two-dimensional array-type silicon detector, a silicon sensor 5, an ASIC 6, and a circuit board 9; the circuit board 9 has a groove, the cooling structure of the two-dimensional array-type silicon detector is embedded in the groove, the cooling structure of the two-dimensional array-type silicon detector is tightly bonded to the ASIC 6 through an epoxy adhesive layer 8, the edge of the groove has multiple rows of pads 10, and the pads of the silicon sensor 5 and the pads of the ASIC 6 are electrically interconnected with the pads 10 on the circuit board 9 through wire bonding 25.
[0015] The cooling structure 7 of the two-dimensional array silicon detector of this application is a double-layer microchannel structure, mainly composed of a silicon substrate 11, a silicon-based flow divider 12, a glass cover plate 13, and two plastic or metal water inlet pipes 14. The silicon substrate 11 and the silicon-based flow divider 12 are mainly bonded together by silicon-silicon bonding to form the first layer of channels, which forms a uniformly distributed microchannel layer. The silicon-based flow divider 12 and the glass cover plate 13 are bonded together by anodic bonding to form the second layer of microchannels, which is used for the distribution and return of each channel in the first layer. The water inlet pipes 14 are bonded or welded to the cover plate 13 with high-strength epoxy adhesive to facilitate connection with an external liquid supply device and provide circulating cooling medium for the microchannel heat sink.
[0016] The silicon substrate 11 has a rectangular structure and includes multiple straight microchannel grooves 15. These grooves are arranged parallel and evenly on the silicon substrate 11. Each straight microchannel groove 15 has cylindrical blind holes at both ends, serving as the inlet 16 and outlet 17 for each groove. The silicon-based diverter plate 12 has the same external dimensions as the silicon substrate 11. Its upper side includes two herringbone-shaped grooves, one being an inlet diverter groove 18 and the other an outlet confluence groove 19. These two herringbone-shaped grooves connect to the inlet straight microchannel groove 20 and the outlet straight microchannel groove 21, respectively. The inlet straight microchannel groove 20 and the outlet straight microchannel groove 21 are each connected to a cylindrical through-hole 22, with each cylindrical through-hole 22 corresponding one-to-one with the inlet 16 and outlet 17 on the silicon substrate 11. The cover plate 13 has the same external dimensions as the silicon substrate and has two holes, namely a water inlet hole 23 and a water outlet hole 24, which are located on the upper side of the inlet diversion channel 18 and the outlet confluence channel 19, respectively. Each of the water inlet pipes can be connected to an external liquid supply device.
[0017] To cool the silicon sensor on the silicon substrate surface, the coolant first flows into a water inlet pipe 14 and a water inlet hole 23 through an external supply device. The coolant is then distributed to the inlet straight microchannel channel 20 through the inlet distribution channel 18 of the second layer microchannel structure. It then flows into the microchannel inlet 16 of the first layer microchannel structure through the cylindrical through hole 22, passes through the straight microchannel channel 15 and the microchannel outlet 17, and flows back to the outlet straight microchannel channel 21 of the second layer microchannel structure through the cylindrical through hole 22. Finally, it flows through the outlet confluence channel 19 to the outlet hole 24 and another water inlet pipe 14, and then flows back to the external supply device.
[0018] The thickness of the silicon substrate 11 is 200um-500um, and the width and depth of the straight microchannel grooves 15 are 100um-400um and 100um-400um respectively, which are less than the thickness of the silicon substrate 11. The diameters of the inlet 16 and the outlet 17 are slightly larger than the width of the straight microchannel grooves 15. The spacing between each straight microchannel groove 15 is greater than or equal to its width.
[0019] The thickness of the silicon-based flow divider plate 12 is 200um-500um. The width of its inlet straight microchannel groove 20 and outlet straight microchannel groove 21 is equivalent to that of the straight microchannel groove 15. The diameter of the cylindrical through hole 22 is equivalent to that of the inlet 23 and the outlet 24. The width of the inlet flow divider groove 18 and the outlet flow combiner groove 19 is 300um-1000um.
[0020] The cover plate 13 has a thickness of 100um-300um, and the diameters of the inlet and outlet holes are slightly larger than the widths of the inlet diversion channel and the outlet confluence channel.
[0021] To achieve efficient and uniform cooling of the silicon detector module, the cooling structure 7 of the two-dimensional array silicon detector is located below the silicon sensor 5 and ASIC 6, and is tightly bonded to the ASIC 6 via an epoxy adhesive layer 8. Below the cooling structure 7 is a circuit board 9 with a recessed structure, in which the cooling structure 7 is embedded, with its thickness matching the recess depth. The edges of the recessed structure have multiple rows of pads 10, and the pads on the silicon sensor 5, ASIC 6, and circuit board 9 are electrically interconnected via wire bonding 25. Preferably, the size of the pads 10 should not be too large, so that when the detectors are assembled into a larger area array on a plane, there is a smaller dead zone area.
[0022] The beneficial effects of this utility model are:
[0023] 1. The dual-layer microchannel structure ensures that the cooling medium flows to the edge first, then flows from one edge to the other edge, and finally flows back to the straight outlet hole. This ensures that the entire microchannel is evenly distributed in a rectangular plane, which can guarantee uniform heat dissipation for silicon sensors and ASICs of similar size, without causing an increase in the "dead zone" area.
[0024] 2. The silicon-based microchannel heat dissipation structure has a "human" shaped groove, which enables the flow to be split from the water inlet hole to multiple micro DC channels with extremely low flow resistance, and the flow to be converged from multiple micro DC channels to the water outlet hole, which greatly reduces the flow resistance of the heat sink and improves the heat exchange capacity of the heat sink.
[0025] 3. The thickness of the cooling structure of the two-dimensional array silicon detector is flush with the depth of the groove on the circuit board, which greatly reduces the wire bonding distance and reduces the risk of crosstalk between signals or other spatial electromagnetic interference. Attached Figure Description
[0026] Figure 1 This refers to the region where the detector module is located on the microfluidic plate.
[0027] Figure 2 This is a schematic diagram of an implementation scheme that integrates a silicon microchannel heat sink with a two-dimensional silicon detector.
[0028] Figure 3 This is a schematic diagram of an implementation scheme for a cooling structure of a dual-layer two-dimensional array silicon detector.
[0029] Reference numerals: 1-Inlet, 2-Microchannel, 3-Silicon sensor placement area, 4-Outlet, 5-Silicon sensor, 6-ASIC, 7-Cooling structure of two-dimensional array silicon detector, 8-Epoxy adhesive layer, 9-Circuit board, 10-Pad, 11-Silicon substrate, 12-Silicon-based flow divider, 13-Cover plate, 14-Water inlet pipe, 15-Straight microchannel groove, 16-Inlet, 17-Outlet, 18-Inlet flow divider groove, 19-Outlet flow combiner groove, 20-Inlet straight microchannel groove, 21-Outlet straight microchannel groove, 22-Cylindrical through hole, 23-Inlet hole, 24-Outlet hole, 25-Wire bonding. Detailed Implementation
[0030] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0031] Figure 2A schematic diagram illustrating an implementation scheme for the cooling structure of a dual-layer two-dimensional array silicon detector is provided. The cooling structure 7 of the two-dimensional array silicon detector is a dual-layer microchannel structure, mainly composed of a silicon substrate 11, a silicon-based flow divider 12, a glass cover plate 13, and two plastic or metal water inlet pipes 14. The silicon substrate 11 and the silicon-based flow divider 12 are primarily bonded together using a silicon-silicon bonding process to form the first layer of channels, creating a uniformly distributed microchannel layer. The silicon-based flow divider 12 and the glass cover plate 13 are anoly bonded together to form the second layer of microchannels, used for distribution and return of each channel in the first layer. The water inlet pipes 14 are bonded or welded to the cover plate 13 with high-strength epoxy adhesive to facilitate connection with an external liquid supply device, providing circulating cooling medium for the microchannel heat sink.
[0032] The silicon substrate 11 has a rectangular structure and includes multiple straight microchannel grooves 15. These grooves are arranged parallel and evenly on the silicon substrate 11. Each straight microchannel groove 15 has cylindrical blind holes at both ends, serving as the inlet 16 and outlet 17 for each groove. The silicon-based diverter plate 12 has the same external dimensions as the silicon substrate 11. Its upper side includes two herringbone-shaped grooves, one being an inlet diverter groove 18 and the other an outlet confluence groove 19. These two herringbone-shaped grooves connect to the inlet straight microchannel groove 20 and the outlet straight microchannel groove 21, respectively. The inlet straight microchannel groove 20 and the outlet straight microchannel groove 21 are each connected to a cylindrical through-hole 22, with each cylindrical through-hole 22 corresponding one-to-one with the inlet 16 and outlet 17 on the silicon substrate 11. The cover plate 13 has the same external dimensions as the silicon substrate and has two holes, namely a water inlet hole 23 and a water outlet hole 24, which are located on the upper side of the inlet diversion channel 18 and the outlet confluence channel 19, respectively. Each of the water inlet pipes can be connected to an external liquid supply device.
[0033] To cool the silicon sensor on the silicon substrate surface, the coolant first flows into a water inlet pipe 14 and a water inlet hole 23 through an external supply device. The coolant is then distributed to the inlet straight microchannel channel 20 through the inlet distribution channel 18 of the second layer microchannel structure. It then flows into the microchannel inlet 16 of the first layer microchannel structure through the cylindrical through hole 22, passes through the straight microchannel channel 15 and the microchannel outlet 17, and flows back to the outlet straight microchannel channel 21 of the second layer microchannel structure through the cylindrical through hole 22. Finally, it flows through the outlet confluence channel 19 to the outlet hole 24 and another water inlet pipe 14, and then flows back to the external supply device.
[0034] Furthermore, the thickness of the silicon substrate 11 is 200um-500um, the width of the straight microchannel groove 15 is 100um-400um, and the depth is 100um-400um, which is less than the thickness of the silicon substrate 11; the diameters of the inlet 16 and the outlet 17 are both slightly larger than the width of the straight microchannel groove 15. The spacing between each straight microchannel groove 15 is greater than or equal to its width.
[0035] Furthermore, the thickness of the silicon-based diversion plate 12 is 200um-500um, the width of its inlet straight microchannel groove 20 and outlet straight microchannel groove 21 is equivalent to that of the straight microchannel groove 15, the diameter of the cylindrical through hole 22 is equivalent to that of the inlet 23 and the outlet 24, and the width of the inlet diversion groove 18 and the outlet confluence groove 19 is 300um-1000um.
[0036] Furthermore, the thickness of the cover plate 13 is 100um-300um, and the diameters of the water inlet and outlet holes are slightly larger than the width of the inlet diversion channel and the outlet confluence channel.
[0037] Figure 2 A schematic diagram illustrates an embodiment integrating a silicon microfluidic heat sink with a two-dimensional silicon detector. To achieve efficient and uniform cooling of the silicon detector module, the cooling structure 7 of the two-dimensional array silicon detector is located below the silicon sensor 5 and ASIC 6, and is tightly bonded to the ASIC 6 via an epoxy adhesive layer 8. Below the cooling structure 7 is a circuit board 9 with a recessed structure, in which the cooling structure 7 is embedded, with its thickness matching the recess depth. The edges of the recessed structure have multiple rows of pads 10, and the pads on the silicon sensor 5, ASIC 6, and circuit board 9 are electrically interconnected via wire bonding 25. Preferably, the size of the pads 10 should not be too large, so as to have a smaller dead zone area when the detectors are spliced into a larger area array on a plane.
[0038] Using the method of this invention, a microchannel heat sink 7 with dimensions of 45mm*38mm*1.1mm is prepared. A resistive heating film is used to simulate the heating of the silicon sensor and ASIC6, simulating the surface temperature distribution of the silicon sensor. Figure 3 As shown in the figure, with an ambient temperature of 25℃ and a load of 2kW / m², 2 Under these conditions, when a refrigerant at 13°C is introduced into the microchannel plate, the highest temperature on the chip surface drops from 74°C to 23°C, and the surface temperature of the entire thermal resistance heating film is below 5°C, resulting in good cooling efficiency and thermal uniformity.
[0039] Although specific embodiments of the present invention have been disclosed for illustrative purposes to aid in understanding and implementing the invention, those skilled in the art will understand that various substitutions, variations, and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the content disclosed in the preferred embodiments, and the scope of protection claimed by the invention is defined by the claims.
Claims
1. A cooling structure for a two-dimensional array silicon detector, characterized in that, It includes a silicon substrate (11), a silicon-based flow divider (12), a cover plate (13), and two water inlet pipes (14); the silicon substrate (11) and the silicon-based flow divider (12) form a first layer of microchannels through a silicon-silicon bonding process; the silicon-based flow divider (12) and the cover plate (13) form a second layer of microchannels through anodic bonding, which is used to distribute the incoming cooling medium and receive the returning cooling medium to each channel in the first layer of microchannels; the two water inlet pipes (14) are respectively connected to the cooling medium input and output ports on the cover plate (13) to provide circulating cooling medium for the microchannel heat sink.
2. The cooling structure of the two-dimensional array silicon detector according to claim 1, characterized in that, The silicon substrate (11) has N parallel straight microchannel grooves (15), and each straight microchannel groove (15) has cylindrical blind holes at both ends, which serve as inlets (16) and outlets (17), respectively. The silicon-based flow divider plate (12) has N inlet straight microchannel grooves (20), N outlet straight microchannel grooves (21), an inlet flow divider groove (18), and an outlet flow combiner groove (19) on one side. The inlet flow divider groove (18) is connected to the inlet of each inlet straight microchannel groove (20) and is used to distribute the cooling medium to each inlet straight microchannel. The outlet confluence channel (20) is connected to the outlet of each outlet straight microchannel channel (21) to receive the cooling medium returning from each inlet straight microchannel channel (20); the outlet of each inlet straight microchannel channel (20) is connected to the inlet (16) of a corresponding straight microchannel channel (15), and the inlet of each outlet straight microchannel channel (21) is connected to the outlet (17) of a corresponding straight microchannel channel (15); the cover plate (13) is provided with an inlet hole (23) and an outlet hole (24) as input and output ports for the cooling medium.
3. The cooling structure of the two-dimensional array silicon detector according to claim 2, characterized in that, The silicon-based flow divider (12) includes two symmetrically placed "V"-shaped grooves. One "V"-shaped groove serves as the inlet flow divider (18), and the other "V"-shaped groove serves as the outlet flow combiner (19). The area between the two "V"-shaped grooves is the injection and return area of the cooling medium. The area outside the inlet flow divider (18) is provided with the N inlet straight microchannel grooves (20), and the area outside the outlet flow combiner (19) is provided with the N outlet straight microchannel grooves (21). The positions of the water inlet hole (23) and the water outlet hole (24) correspond to the injection and return area of the cooling medium.
4. The cooling structure of the two-dimensional array silicon detector according to claim 2, characterized in that, The thickness of the silicon substrate (11) is 200um-500um; the width of the straight microchannel groove (15) is 100um-400um and the depth is 100um-400um, and the spacing between adjacent straight microchannel grooves (15) is greater than or equal to the width of the straight microchannel groove (15).
5. The cooling structure of the two-dimensional array silicon detector according to claim 2, characterized in that, The outlet of the outlet straight microchannel groove (21) and the outlet of the inlet straight microchannel groove (20) are both cylindrical through holes (22).
6. The cooling structure of the two-dimensional array silicon detector according to claim 2, characterized in that, The thickness of the silicon-based flow divider (12) is 200um-500um, the width of the inlet straight microchannel groove (20) is 100um-400um, the width of the outlet straight microchannel groove (21) is 100um-400um, the width of the inlet flow divider groove (18) is 300um-1000um, the width of the outlet flow combiner groove (19) is 300um-1000um, and the thickness of the cover plate (13) is 100um-300um.
7. A packaging structure for an array-type silicon detector, characterized in that, The device includes a cooling structure for a two-dimensional array silicon detector as described in claim 1, a silicon sensor (5), an ASIC (6), and a circuit board (9); the circuit board (9) has a groove, the cooling structure for the two-dimensional array silicon detector is embedded in the groove, the cooling structure for the two-dimensional array silicon detector is tightly bonded to the ASIC (6) through an epoxy adhesive layer (8), the edge of the groove has multiple rows of pads (10), and the pads of the silicon sensor (5) and the ASIC (6) are electrically interconnected with the pads (10) on the circuit board (9) through wire bonding (25).