Low-damage and high-efficiency laser processing assembly

Abstract

The utility model relates to the technical field of laser processing, in particular to a low-damage high-efficiency laser processing assembly, which comprises a galvanometer, a laser transmitter and a field lens, the laser transmitter transmits a plurality of laser S pulse packets, an optical diffraction device is arranged on one side of the galvanometer, and the field lens is arranged on the other side of the galvanometer. The plurality of laser S pulse packets are converted into a plurality of laser X pulse packets through an optical diffraction device, the laser S pulse packets are Gaussian light, the laser X pulse packets are flat-topped light, and the plurality of laser X pulse packets etch a processing material through a galvanometer and a field lens. According to the utility model, the time interval between the current pulse packet and the next pulse packet is adjusted according to the actual distance requirement between holes, the energy utilization rate of laser is improved by adopting a processing mode of high monopulse energy and containing N laser sub-pulses, and in addition, the light spot form is changed from Gaussian light to flat light, so that the processing efficiency is improved. And damage to the edge of a machining material in the machining process is relieved.

Description

TECHNICAL FIELD

[0001] The utility model relates to laser processing technical field, concretely is a kind of low-damage high-efficiency laser processing assembly. BACKGROUND

[0002] In the application of some scenes, part of metal or non-metal material needs to have very high light absorption, and the structure for absorbing light energy on the processing material is called light trapping structure, which can reduce reflection and increase light absorption. Light trapping structure mainly includes pyramid structure, porous structure and black surface structure, wherein the porous structure can be completed by laser etching.

[0003] The processing method of laser etching of porous structure on the market is usually divided into two kinds from area, one is the method of etching per unit area, this method is fast, but the energy of each laser is low, and the light trapping hole with a depth of 1-10 μm can be usually processed.

[0004] Another method is to etch each hole one by one, especially when the etching depth of the hole is greater than 10 μm, the energy of each laser needs to be higher. In the existing laser etching method, the high-speed scanning galvanometer can reach more than 20 m / s, but the energy of each beam is too large, which exceeds the processing threshold of the processing material, causing stress concentration on the surface of the processing material, damaging the mechanical strength and stability of the processing material. The damaged processing material cannot achieve very high light absorption, and needs to be reworked or re-etched. The utilization rate of laser energy is not accurate, and the etching efficiency is greatly reduced. Therefore, a low-damage high-efficiency laser processing assembly is needed to solve the above problems. UTILITY MODEL CONTENTS

[0005] The utility model aims at providing a kind of low-damage high-efficiency laser processing assembly to solve the problem that the high-speed scanning galvanometer can reach more than 20 m / s in the existing laser etching method in the above background art, but the energy of each beam is too large, which exceeds the processing threshold of the processing material, causing stress concentration on the surface of the processing material, damaging the mechanical strength and stability of the processing material. The damaged processing material cannot achieve very high light absorption, and needs to be reworked or re-etched. The utilization rate of laser energy is not accurate, and the etching efficiency is greatly reduced.

[0006] To achieve the above purpose, the utility model provides the following technical scheme: a kind of low-damage high-efficiency laser processing assembly, including galvanometer, laser emitter and field lens, the laser emitter emits several times laser S pulse package, can realize 500-5000 between 50 million laser drilling in 1 minute, the diameter of hole is 50 μm-150 μm, and the depth of hole is 20 μm-100 μm.

[0007] Preferably, the laser S pulse package is used to etch the processing material through the galvanometer and the field lens, and the processing material includes silicon, copper and aluminum.

[0008] Preferably, one side of the galvanometer is provided with an optical diffraction device, the laser S pulse package is converted into a laser X pulse package through the optical diffraction device, the laser S pulse package is Gaussian light, and the laser X pulse package is flat-top light, and the laser X pulse package is used to etch the processing material through the galvanometer and the field lens.

[0009] Preferably, the laser S pulse package or / and the laser X pulse package is divided into N sub-pulses, the number of the N sub-pulses is 1-5000, and the interval time between each sub-pulse is 1-100 ns.

[0010] Preferably, the movement speed of the galvanometer is Q, and 25 m / s>Q>2 m / s.

[0011] Preferably, the time interval between the laser S pulse package and the next laser S pulse package is P time, and the range of P is 0.3 us-4 us.

[0012] Preferably, the time interval between the laser S pulse package and the next laser S pulse package is T time, and T is the distance from the current processing position to the next processing position / Q.

[0013] Preferably, one side of the laser emitter is provided with a mirror, and the laser S pulse package is reflected through the mirror.

[0014] Compared with the prior art, the beneficial effects of the utility model are as follows: the time interval between the current pulse package and the next pulse package is adjusted according to the actual distance between holes, finally, the laser etching efficiency is high, high single pulse energy is adopted, the processing mode of containing N laser sub-pulses is adopted, each laser sub-pulse reaches the processing threshold of the material, thereby the energy utilization rate of the laser is improved, in addition, the spot form is changed from Gaussian light to flat-top light, the energy density of the focused spot is relatively uniform, the problem that the energy density of the edge of Gaussian light is too low is reduced, and the damage of the edge of the processing material in the processing process is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0015] Fig. 1 It is a front view structural schematic diagram of the utility model;

[0016] Fig. 2 It is a running step schematic diagram of the utility model;

[0017] Fig. 3 It is a demonstration diagram of N sub-pulses in the laser S pulse package of the utility model;

[0018] Fig. 4 It is a data diagram of embodiment 1 of the utility model.

[0019] In the figure: 1, galvanometer; 2, laser emitter; 3, field lens; 4, laser S pulse package; 5, optical diffraction device; 6, laser X pulse package; 7, reflecting mirror. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the utility model will be apparently and completely described in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the ordinary technical personnel in the field without creative labor belong to the range protected by the utility model.

[0021] Please refer to Figs. 1 to 4 The utility model provides a kind of technical scheme: a kind of low-damage high-efficiency laser processing assembly, including galvanometer 1, laser emitter 2 and field lens 3, laser emitter 2 emits several times laser S pulse package 4, can realize 500-5000 million between 1 minute laser drilling, the diameter of hole is 50 μm-150 μm, the depth of hole is 20 μm-100 μm.

[0022] Further, several times laser S pulse package 4 is etched to processing material by galvanometer 1 and field lens 3, and the processing material includes silicon, copper and aluminum.

[0023] Further, the side of galvanometer 1 is provided with optical diffraction device 5, and several times laser S pulse package 4 is converted into several times laser X pulse package 6 by optical diffraction device 5, laser S pulse package 4 is Gaussian light, and laser X pulse package 6 is flat-top light, and several times laser X pulse package 6 is etched to processing material by galvanometer 1 and field lens 3.

[0024] Further, several times laser S pulse package 4 or / and laser X pulse package 6 is divided into N sub-pulses, and the number of N sub-pulses is 1-5000, and the interval time between each sub-pulse is 1-100 ns.

[0025] Further, the movement speed of the galvanometer 1 is Q, 25 m / s>Q>2 m / s, the field lens 3 is installed on the galvanometer 1, and the galvanometer 1 moves with the field lens 3.

[0026] Further, the time interval between the laser S pulse package 4 and the next laser S pulse package 4 is P time, and the range of P is 0.3 μs-4 μs.

[0027] Further, the time interval between the laser S pulse package 4 and the next laser S pulse package 4 is T time, and T=the distance from the current processing position to the next processing position / Q.

[0028] It needs to be explained that the machining route map will be introduced into the galvanometer 1, and when the route is used, the current machining position and the next machining position will be known, and the distance between the current machining position and the next machining position can be obtained, and the speed Q and the interval time T of the movement of the galvanometer 1 can be adjusted according to the distance.

[0029] Further, one side of the laser emitter 2 is provided with a mirror 7, and the laser S pulse package 4 is reflected through the mirror 7.

[0030] In the embodiment 1, the galvanometer 1 carries the field lens 3 to move to the hole starting point, the feedback position is given to the laser emitter 2, the laser emitter 2 is started and emits the laser S pulse package 4 multiple times, each time interval is P or T, the laser S pulse package 4 is converted into the laser X pulse package 6 through the optical diffraction device 5, the galvanometer 1 and the field lens 3 move at the speed of 10 m / s, the laser X pulse package 6 is divided into three sub-pulses, the interval time between each sub-pulse is 100 ns, the pulse time interval can improve the excitation breaking of the material molecular bond, high single pulse energy is adopted, each laser sub-pulse reaches the machining threshold of the machining material, the energy utilization rate of the laser is improved, the damage of the machining material is reduced, the hole depth is 45.559 μm, the diameter of the hole is 99.573 μm, and better light trapping effect is achieved.

[0031] In the embodiment 2, the galvanometer 1 carries the field lens 3 to move to the hole starting point, the feedback position is given to the laser emitter 2, the laser emitter 2 is started and emits the laser S pulse package 4 multiple times, each time interval is P or T, the galvanometer 1 and the field lens 3 move at the speed of 20 m / s, the laser S pulse package 4 is divided into 50 sub-pulses, the interval time between each sub-pulse is 10 ns, the pulse time interval can improve the excitation breaking of the material molecular bond, high single pulse energy is adopted, each laser sub-pulse reaches the machining threshold of the machining material, the energy utilization rate of the laser is improved, the damage of the machining material is reduced, the hole depth is 99.355 μm, the diameter of the hole is 148.237 μm, and better light trapping effect is achieved.

[0032] The basic principle, main features and advantages of the utility model are shown and described above. The technical workers in the industry should understand that the utility model is not limited by the above embodiments, the above embodiments and the description in the specification are only preferred examples of the utility model, and are not used to limit the utility model, various changes and improvements of the utility model fall within the scope of the utility model without departing from the spirit and range of the utility model. The protection scope of the utility model is defined by the appended claims and equivalents thereof.

Claims

1. A low-damage high-efficiency laser processing assembly, characterized by: Including a galvanometer (1), a laser emitter (2) and a field lens (3), the laser emitter (2) emits several laser S pulse packages (4); The laser drilling speed can reach 500-5000 million times per minute, the diameter of the hole is 50-150 μm, and the depth of the hole is 20-100 μm.

2. The low-damage high-efficiency laser processing assembly according to claim 1, wherein: The several laser S pulse packages (4) pass through the galvanometer (1) and the field lens (3) to etch the processing material, and the processing material includes silicon, copper and aluminum.

3. The low-damage high-efficiency laser processing assembly of claim 1, wherein: One side of the galvanometer (1) is provided with an optical diffraction device (5), and the several laser S pulse packages (4) are converted into several laser X pulse packages (6) through the optical diffraction device (5), the laser S pulse package (4) is Gaussian light, and the laser X pulse package (6) is flat-top light, and the several laser X pulse packages (6) pass through the galvanometer (1) and the field lens (3) to etch the processing material.

4. The low-damage high-efficiency laser processing assembly according to any one of claims 2 or 3, characterized in that: The several laser S pulse packages (4) or / and the laser X pulse packages (6) are divided into N sub-pulses, the number of the N sub-pulses is 1-5000, and the interval time between each sub-pulse is 1-100 ns.

5. The low-damage high-efficiency laser processing assembly of claim 1, wherein: The movement speed of the galvanometer (1) is Q, and 25 m / s>Q>2 m / s.

6. The low-damage high-efficiency laser processing assembly of claim 1, wherein: When the time interval between the laser S pulse package (4) and the next laser S pulse package (4) is P time, the range of P is 0.3-4 μs.

7. The low-damage high-efficiency laser processing assembly of claim 1, wherein: When the time interval between the laser S pulse package (4) and the next laser S pulse package (4) is T time, T=the distance between the current processing position and the next processing position / Q.

8. The low-damage high-efficiency laser processing assembly of claim 1, wherein: One side of the laser emitter (2) is provided with a mirror (7), and the laser S pulse package (4) is reflected through the mirror (7).

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