Single-sided light-emitting LED chip and display device

Abstract

The utility model provides a single-sided light-emitting LED chip and a display device, the single-sided light-emitting LED chip comprises a second contact electrode and an epitaxial laminated layer which are arranged on one side of a substrate, the surface of one side of the second contact electrode facing the epitaxial laminated layer is provided with an exposed first table board, the first table board surrounds the epitaxial laminated layer, and the first table board is provided with a second table board. The surface of one side, deviating from the substrate, of the epitaxial laminated layer is a light-emitting table surface; the first contact electrode covers the side wall of the epitaxial laminated layer and the first table top in a manner of spacing an insulating layer, and a light blocking layer made of an insulating material is arranged on a part of the first table top, is used for covering the side wall of the insulating layer and is jointed with the first contact electrode; wherein the light blocking structure formed by the light blocking layer, the first contact electrode and the second contact electrode can avoid the occurrence of stray light caused by light emitting from the side surface of the LED chip and an optical waveguide effect, so that the light emitted by the LED chip is emitted from the light-emitting table surface, and the single-surface light emitting of the LED chip is realized.

Description

Technical Field

[0001] This utility model relates to the field of light-emitting diode technology, and more specifically, to a single-sided light-emitting LED chip and display device. Background Technology

[0002] Besides their widespread use in lighting, LEDs (Light Emitting Diodes) also have a huge market in displays and indicators. Traditional LED chips primarily focus on parameters such as brightness and luminous efficacy. Although the luminous morphology is also considered in high-end display applications, most existing chips are five-sided light sources. While thin-film chips possess good Lambertian luminous morphology, closely resembling single-sided light emission, the actual 3-10 micrometer thickness of the light-emitting layer still results in side-emitting light, effectively making them five-sided light sources. Furthermore, most chip manufacturing processes use transparent materials as substrates or insulating materials, allowing light to easily conduct within these materials and escape outside the light-emitting areas, creating stray light.

[0003] Furthermore, traditional display and indicator applications often integrate varying numbers of LED chips into the package and module. This approach tends to result in larger sizes, lower integration, and noticeable graininess and stray light in the display or indicator effect. The display quality is often unsatisfactory in applications requiring close-to-the-eye visibility or high integration, particularly in specialized applications such as gun sights, where existing integrated light sources or traditional five-sided light-emitting sources cannot meet the requirements for size and light source clarity. Utility Model Content

[0004] In view of this, the present invention provides a single-sided light-emitting LED chip and a display device. This LED chip features single-sided light emission and no stray light crosstalk, resulting in better display performance. This solves the problems of existing LED chips having side light emission and stray light, which cause poor display performance in applications requiring close-to-the-eye illumination or high integration, and fail to meet requirements for size and light source clarity.

[0005] To achieve the above objectives, the technical solution adopted by this utility model is as follows:

[0006] A single-sided light-emitting LED chip, characterized in that it comprises:

[0007] substrate;

[0008] A second contact electrode and an epitaxial stack are sequentially disposed on one side of the substrate. The epitaxial stack includes at least: a second type semiconductor layer, an active region, and a first type semiconductor layer sequentially stacked on the second contact electrode from bottom to top, and the second contact electrode is electrically connected to the second type semiconductor layer; wherein, the surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and the surface of the epitaxial stack facing away from the substrate is a light-emitting mesa;

[0009] An insulating layer that covers the sidewalls of the epitaxial stack and extends to a portion of the surface of the first mesa;

[0010] The first contact electrode covers the sidewalls of the epitaxial stack and the first mesa by means of the insulating layer, and extends to a portion of the light-emitting mesa to form an electrical connection with the first type of semiconductor layer;

[0011] A light-blocking layer of insulating material is provided on a portion of the first platform surface to cover the sidewalls of the insulating layer and to engage with the first contact electrode;

[0012] The light-blocking layer, the first contact electrode, and the second contact electrode constitute a light-blocking structure.

[0013] Preferably, the light-blocking layer covers the insulating layer located on the sidewall of the first platform, and the first contact electrode covers at least a portion of the insulating layer near the sidewall of the light-emitting platform.

[0014] Preferably, the second contact electrode comprises a reflective metallic material.

[0015] Preferably, the first contact electrode comprises a reflective metallic material, and the light-blocking layer comprises a reflective insulating material.

[0016] Preferably, the first contact electrode comprises a light-absorbing metal material, and the light-blocking layer comprises a light-absorbing insulating material.

[0017] Preferably, the light-blocking layer is a single-layer insulating layer or a multi-layer insulating layer.

[0018] Preferably, the light-blocking layer extends to a portion of the surface of the first contact electrode.

[0019] Preferably, the light-blocking layer extends to a portion of the surface of the insulating layer, and the first contact electrode covers the upper surface of the light-blocking layer.

[0020] Preferably, the contact interfaces between the light-blocking layer and the first contact electrode, the second contact electrode, and the insulating layer all have roughened surfaces.

[0021] This utility model also provides a display device, characterized in that it includes: a single-sided light-emitting LED chip as described in any one of the above claims.

[0022] As can be seen from the above technical solution, the single-sided light-emitting LED chip provided by this utility model includes: a second contact electrode and an epitaxial stack sequentially disposed on one side of a substrate, wherein the surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and the surface of the epitaxial stack facing away from the substrate is a light-emitting mesa; the first contact electrode covers the sidewall of the epitaxial stack and the first mesa by means of an insulating layer, and a light-blocking layer of insulating material is provided on a portion of the first mesa to cover the sidewall of the insulating layer and to be combined with the first contact electrode. The second contact electrode can block the light emitted from the LED chip substrate, and the first contact electrode combined with the light-blocking layer can block the light emitted from the sidewall of the epitaxial stack and the light conducted to the insulating layer, so that the light-blocking structure composed of the light-blocking layer, the first contact electrode and the second contact electrode can avoid the side light emission of the LED chip and the stray light caused by the optical waveguide effect, so that the light emitted by the LED chip is emitted from the light-emitting mesa, thereby realizing the single-sided light emission of the LED chip.

[0023] Furthermore, by setting the first contact electrode to include a reflective metal material and the light-blocking layer to include a reflective insulating material, the light propagating laterally within the epitaxial stack can be reflected, so that the light is finally emitted from the light-emitting platform, thereby improving the light extraction efficiency of the LED chip.

[0024] Furthermore, depending on actual needs, by setting the first contact electrode to include a light-absorbing metal material and the light-blocking layer to include a light-absorbing insulating material, not only can light leakage be reduced, but also light rays propagating laterally within the epitaxial stack can be absorbed without reflection, so that light is emitted perpendicularly from the light-emitting platform, thereby obtaining a better light distribution curve.

[0025] Furthermore, by extending the light-blocking layer to a portion of the surface of the first contact electrode, the contact area between the light-blocking layer and the first contact electrode can be increased, thereby improving the adhesion between the light-blocking layer and the first contact electrode and preventing the light-blocking layer from falling off, which would cause light leakage from the side of the LED chip.

[0026] Furthermore, by setting a light-blocking layer that extends to a portion of the surface of the insulating layer, and by having the first contact electrode cover the upper surface of the light-blocking layer, the adhesion between the light-blocking layer, the insulating layer, and the first contact electrode can be improved, preventing the light-blocking layer from falling off and causing light leakage from the side of the LED chip.

[0027] Furthermore, by setting the contact interface between the light-blocking layer and the first contact electrode, the second contact electrode, and the insulating layer to have a roughened surface, the adhesion between the light-blocking layer and the insulating layer, the first contact electrode, and the second contact electrode can be improved, thus preventing the light-blocking layer from falling off and causing light leakage from the side of the LED chip.

[0028] The present invention provides a display device comprising the aforementioned single-sided light-emitting LED chip. This LED chip has single-sided light emission and no stray light crosstalk, thus providing better display effect to meet the requirements of size and light source clarity, as well as in applications requiring close-to-the-eye illumination or high integration. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0030] Figure 1 A schematic diagram of the structure of a single-sided light-emitting LED chip provided in an embodiment of this utility model;

[0031] Figure 2 A schematic diagram of another single-sided light-emitting LED chip provided in this embodiment of the present utility model;

[0032] Figure 3 A flowchart illustrating a method for manufacturing a single-sided LED chip according to an embodiment of this utility model;

[0033] Figures 4 to 12 for Figure 3 The diagram shows the structural schematics corresponding to each step of the manufacturing process.

[0034] Explanation of symbols in the diagram:

[0035] 01. Growth substrate; A. First mesa;

[0036] 1. Substrate; 2. Epitaxial stack; 21. Type I semiconductor layer; 22. Active region; 23. Type II semiconductor layer; 24. Light-emitting mesa; 3. First contact electrode; 31. First electrode pad; 4. Second contact electrode; 5. Insulating layer; 6. Light-blocking layer. Detailed Implementation

[0037] To make the content of this utility model clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0038] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0039] Secondly, this application provides a detailed description in conjunction with schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.

[0040] This embodiment provides a single-sided light-emitting LED chip, such as... Figure 1 As shown, a single-sided LED chip includes:

[0041] substrate1;

[0042] A second contact electrode 4 and an epitaxial stack 2 are sequentially disposed on one side of the substrate 1. The epitaxial stack 2 includes at least: a second type semiconductor layer 23, an active region 22, and a first type semiconductor layer 21, which are sequentially stacked on the second contact electrode 4 from bottom to top, and the second contact electrode 4 is electrically connected to the second type semiconductor layer 23. The surface of the second contact electrode 4 facing the epitaxial stack 2 has an exposed first mesa A (not shown in the figure), the first mesa A surrounds the epitaxial stack 2, and the surface of the epitaxial stack 2 facing away from the substrate 1 is a light-emitting mesa 24.

[0043] Insulating layer 5, which covers the sidewalls of the epitaxial stack 2 and extends to a portion of the surface of the first mesa A;

[0044] The first contact electrode 3 covers the sidewall of the epitaxial stack 2 and the first mesa A by means of an insulating layer 5, and extends to a portion of the light-emitting mesa 24 to form an electrical connection with the first type semiconductor layer 21.

[0045] A light-blocking layer 6 made of insulating material is provided on part of the first platform A to cover the sidewall of the insulating layer 5 and to be connected to the first contact electrode 3.

[0046] The light-blocking layer 6, the first contact electrode 3, and the second contact electrode 4 constitute a light-blocking structure.

[0047] In this embodiment, the specific number of layers and structure of the epitaxial stack 2 are not limited. The epitaxial stack 2 includes at least a first type semiconductor layer 21, an active region 22 and a second type semiconductor layer 23. In other embodiments, in order to improve lattice matching, the epitaxial stack 2 of the LED chip may also include a superlattice structure, etc.

[0048] It should be noted that this embodiment does not limit the specific doping type of the first type semiconductor layer 21 and the second type semiconductor layer 23. The doping types of the first type semiconductor layer 21 and the second type semiconductor layer 23 are opposite. The first type semiconductor layer 21 can be a P-type semiconductor layer or an N-type semiconductor layer. The materials of the N-type semiconductor layer and the P-type semiconductor layer can be GaN or AlGaN.

[0049] Optionally, in this embodiment, the second contact electrode 4 includes a reflective metallic material.

[0050] Based on the above embodiments, in one embodiment of this application, the insulating layer 5 includes, but is not limited to, one or more of silicon oxide, aluminum oxide, silicon nitride, titanium fluoride, magnesium fluoride, and zirconium oxide.

[0051] Based on the above embodiments, in one embodiment of this application, the light-blocking layer 6 covers the insulating layer 5 located on the side wall of the first platform A, and the first contact electrode 3 covers at least part of the insulating layer 5 near the side wall of the light-emitting platform 24.

[0052] In another embodiment of this utility model, the light-blocking layer 6 covers the insulating layer 5 located on the side wall of the first platform A, and the first contact electrode 3 completely covers the insulating layer 5 near the side wall of the light-emitting platform 24, so as to prevent the light emitted from the light-emitting platform 24 from being conducted to the side wall of the insulating layer 5, thereby reducing the light loss of the LED chip.

[0053] Based on the above embodiments, in one embodiment of this application, a first electrode pad 31 is provided on a portion of the surface of the first contact electrode 3 facing away from the insulating layer 5.

[0054] Based on the above embodiments, in one embodiment of this application, the light-blocking layer 6 is a single-layer insulating layer or a multi-layer insulating layer.

[0055] Optionally, in this embodiment, the multilayer insulating layer includes a DBR structure.

[0056] It should be noted that in this embodiment, the DBR structure is a periodic structure consisting of two materials with different refractive indices stacked alternately in an ABAB manner. The high refractive index layer can be a Ti3O5 layer, and the low refractive index layer can be a SiO2 layer. Furthermore, the number of alternating stacking periods of the DBR structure is not specifically limited and can be set according to actual needs.

[0057] Based on the above embodiments, in one embodiment of this application, the first contact electrode 3 includes a reflective metal material, and the light-blocking layer 6 includes a reflective insulating material.

[0058] Optionally, in this embodiment, the light-blocking layer 6 includes, but is not limited to, one or more of titanium dioxide, aluminum oxide, and white silicone.

[0059] To further improve the light extraction efficiency of the LED chip, optionally, in this embodiment, the insulating layer 5 includes an insulating dielectric material, and the first contact electrode 3 and the insulating layer 5 constitute an ODR structure.

[0060] In another embodiment of this application, the first contact electrode 3 includes a light-absorbing metal material, and the light-blocking layer 6 includes a light-absorbing insulating material.

[0061] Optionally, in this embodiment, the light-blocking layer 6 includes, but is not limited to, one or more of black epoxy resin, black silicone, and carbon black filled polymer.

[0062] Based on the above embodiments, in one embodiment of this application, the light-blocking layer 6 extends to a portion of the surface of the first contact electrode 3.

[0063] In another embodiment of the present invention, the light-blocking layer 6 covers the side wall of the first contact electrode 3 located on the first platform A and extends to a portion of the upper surface of the first contact electrode 3.

[0064] In another embodiment of this application, such as Figure 2 As shown, the light-blocking layer 6 extends to a portion of the surface of the insulating layer 5, and the first contact electrode 3 covers the upper surface of the light-blocking layer 6.

[0065] Based on the above embodiments, in one embodiment of this application, the contact interfaces between the light-blocking layer 6 and the first contact electrode 3, the second contact electrode 4, and the insulating layer 5 all have roughened surfaces.

[0066] Based on the above embodiments, in one embodiment of this application, the substrate 1 includes a conductive substrate 1.

[0067] Based on the above embodiments, in one embodiment of this application, the first contact electrode 3 and the second contact electrode 4 are both including but not limited to: one or more stacks of Al, Ag, Ni, Cr, Au, Pt, Pd, Sn, W, Rh, Ir, Ru, Mg, Zn, In, Ti, and V.

[0068] This application also provides a method for manufacturing a single-sided light-emitting LED chip, used to manufacture any of the single-sided light-emitting LED chips described above, such as... Figure 3 As shown, the fabrication method of a single-sided LED chip includes the following steps:

[0069] S01, such as Figure 4 As shown, a growth substrate 01 is provided;

[0070] In this embodiment, there is no limitation on the specific type of growth substrate 01. Optionally, growth substrate 01 can be a semiconductor substrate such as sapphire substrate, silicon substrate or silicon carbide substrate, and the specific material of growth substrate 01 can be selected and used according to the requirements.

[0071] S02, such as Figure 5 As shown, an epitaxial stack 2 is grown on a growth substrate 01; the epitaxial stack 2 includes at least: a first type semiconductor layer 21, an active region 22 and a second type semiconductor layer 23 stacked sequentially along the growth direction;

[0072] In this embodiment, the specific number of layers and structure of the epitaxial stack 2 are not limited. The epitaxial stack 2 includes at least a first type semiconductor layer 21, an active region 22 and a second type semiconductor layer 23. In other embodiments, in order to improve lattice matching, the epitaxial stack 2 of the LED chip may also include a superlattice structure, etc.

[0073] It should be noted that this embodiment does not limit the specific doping type of the first type semiconductor layer 21 and the second type semiconductor layer 23. The doping types of the first type semiconductor layer 21 and the second type semiconductor layer 23 are opposite. The first type semiconductor layer 21 can be a P-type semiconductor layer or an N-type semiconductor layer. The materials of the N-type semiconductor layer and the P-type semiconductor layer can be GaN or AlGaN.

[0074] S03, such as Figure 6 As shown, a full-surface second contact electrode 4 is deposited on the surface of the second type semiconductor layer 23;

[0075] Optionally, in this embodiment, the second contact electrode 4 includes a reflective metallic material.

[0076] S04, such as Figure 7 As shown, the second contact electrode 4 is bonded to the substrate 1 on the side facing away from the epitaxial stack 2 through a bonding process.

[0077] S05, such as Figure 8 As shown, the growth substrate 01 is peeled off;

[0078] S06, such as Figure 9 As shown, by etching the epitaxial stack 2, the surface of the second contact electrode 4 facing the epitaxial stack 2 has an exposed first mesa A, the first mesa A surrounds the epitaxial stack 2, and the surface of the epitaxial stack 2 facing away from the substrate 1 is a light-emitting mesa 24.

[0079] S07, such as Figure 10 As shown, an insulating layer 5 is deposited, which covers the sidewalls of the epitaxial stack 2 and extends to a portion of the surface of the first mesa A;

[0080] S08, such as Figure 11 As shown, a first contact electrode 3 is fabricated so that it covers the sidewall of the epitaxial stack 2 and the first mesa A by means of an insulating layer 5, and extends to a portion of the light-emitting mesa 24 to form a connection with the first type semiconductor layer 21.

[0081] S09, such as Figure 12 As shown, an insulating light-blocking layer 6 is formed on the exposed first platform A to cover the sidewall of the insulating layer 5 and to be bonded to the first contact electrode 3.

[0082] The light-blocking layer 6, the first contact electrode 3, and the second contact electrode 4 constitute a light-blocking structure.

[0083] Based on the above embodiments, in one embodiment of this application, the insulating layer 5 includes, but is not limited to, one or more of silicon oxide, aluminum oxide, silicon nitride, titanium fluoride, magnesium fluoride, and zirconium oxide.

[0084] Based on the above embodiments, in one embodiment of this application, reference is made to... Figure 1 As shown, a first electrode pad 31 is provided on a portion of the surface of the first contact electrode 3 facing away from the insulating layer 5.

[0085] Based on the above embodiments, in one embodiment of this application, the light-blocking layer 6 covers the insulating layer 5 located on the side wall of the first platform A, and the first contact electrode 3 covers at least part of the insulating layer 5 near the side wall of the light-emitting platform 24.

[0086] In another embodiment of this utility model, the light-blocking layer 6 covers the insulating layer 5 located on the side wall of the first platform A, and the first contact electrode 3 completely covers the insulating layer 5 near the side wall of the light-emitting platform 24, so as to prevent the light emitted from the light-emitting platform 24 from being conducted to the side wall of the insulating layer 5, thereby reducing the light loss of the LED chip.

[0087] Based on the above embodiments, in one embodiment of this application, the light-blocking layer 6 is a single-layer insulating layer or a multi-layer insulating layer.

[0088] Optionally, in this embodiment, the multilayer insulating layer includes a DBR structure.

[0089] It should be noted that in this embodiment, the DBR structure is a periodic structure consisting of two materials with different refractive indices stacked alternately in an ABAB manner. The high refractive index layer can be a Ti3O5 layer, and the low refractive index layer can be a SiO2 layer. Furthermore, the number of alternating stacking periods of the DBR structure is not specifically limited and can be set according to actual needs.

[0090] Based on the above embodiments, in one embodiment of this application, the first contact electrode 3 includes a reflective metal material, and the light-blocking layer 6 includes a reflective insulating material.

[0091] Optionally, in this embodiment, the light-blocking layer 6 includes, but is not limited to, one or more of titanium dioxide, aluminum oxide, and white silicone.

[0092] To further improve the light extraction efficiency of the LED chip, optionally, in this embodiment, the insulating layer 5 includes an insulating dielectric material, and the first contact electrode 3 and the insulating layer 5 constitute an ODR structure.

[0093] In another embodiment of this application, the first contact electrode 3 includes a light-absorbing metal material, and the light-blocking layer 6 includes a light-absorbing insulating material.

[0094] Optionally, in this embodiment, the light-blocking layer 6 includes, but is not limited to, one or more of black epoxy resin, black silicone, and carbon black filled polymer.

[0095] Based on the above embodiments, in one embodiment of this application, the light-blocking layer 6 extends to a portion of the surface of the first contact electrode 3.

[0096] In another embodiment of the present invention, the light-blocking layer 6 covers the side wall of the first contact electrode 3 located on the first platform A and extends to a portion of the upper surface of the first contact electrode 3.

[0097] In another embodiment of this application, reference is made to Figure 2 As shown, the light-blocking layer 6 extends to a portion of the surface of the insulating layer 5, and the first contact electrode 3 covers the upper surface of the light-blocking layer 6.

[0098] Based on the above embodiments, in one embodiment of this application, the contact interfaces between the light-blocking layer 6 and the first contact electrode 3, the second contact electrode 4, and the insulating layer 5 all have roughened surfaces.

[0099] Based on the above embodiments, in one embodiment of this application, the substrate 1 includes a conductive substrate 1.

[0100] Based on the above embodiments, in one embodiment of this application, the first contact electrode 3 and the second contact electrode 4 are both including but not limited to: one or more stacks of Al, Ag, Ni, Cr, Au, Pt, Pd, Sn, W, Rh, Ir, Ru, Mg, Zn, In, Ti, and V.

[0101] This application also provides a display device, which includes: a single-sided light-emitting LED chip of any of the above-mentioned methods, or a single-sided light-emitting LED chip prepared using any of the above-mentioned methods.

[0102] In summary, as can be seen from the above technical solution, the single-sided light-emitting LED chip provided in this embodiment includes: a second contact electrode and an epitaxial stack sequentially disposed on one side of a substrate, wherein the surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and the surface of the epitaxial stack facing away from the substrate is a light-emitting mesa; the first contact electrode covers the sidewall of the epitaxial stack and the first mesa by means of an insulating layer, and a light-blocking layer of insulating material is provided on a portion of the first mesa to cover the sidewall of the insulating layer and to be combined with the first contact electrode. The second contact electrode can block the light emitted from the LED chip substrate, and the first contact electrode combined with the light-blocking layer can block the light emitted from the sidewall of the epitaxial stack and the light conducted to the insulating layer, so that the light-blocking structure composed of the light-blocking layer, the first contact electrode and the second contact electrode can avoid the side light emitted by the LED chip and the stray light caused by the optical waveguide effect, so that the light emitted by the LED chip is emitted from the light-emitting mesa, thereby realizing the single-sided light emission of the LED chip.

[0103] Furthermore, by setting the first contact electrode to include a reflective metal material and the light-blocking layer to include a reflective insulating material, the light propagating laterally within the epitaxial stack can be reflected, so that the light is finally emitted from the light-emitting platform, thereby improving the light extraction efficiency of the LED chip.

[0104] Furthermore, depending on actual needs, by setting the first contact electrode to include a light-absorbing metal material and the light-blocking layer to include a light-absorbing insulating material, the light propagating laterally within the epitaxial stack can be absorbed without being reflected, so that the light is emitted perpendicularly from the light-emitting platform, thereby obtaining a better light distribution curve.

[0105] Furthermore, by extending the light-blocking layer to a portion of the surface of the first contact electrode, the contact area between the light-blocking layer and the first contact electrode can be increased, thereby improving the adhesion between the light-blocking layer and the first contact electrode and preventing the light-blocking layer from falling off, which would cause light leakage from the side of the LED chip.

[0106] Furthermore, by setting a light-blocking layer that extends to a portion of the surface of the insulating layer, and by having the first contact electrode cover the upper surface of the light-blocking layer, the adhesion between the light-blocking layer, the insulating layer, and the first contact electrode can be improved, preventing the light-blocking layer from falling off and causing light leakage from the side of the LED chip.

[0107] Furthermore, by setting the contact interface between the light-blocking layer and the first contact electrode, the second contact electrode, and the insulating layer to have a roughened surface, the adhesion between the light-blocking layer and the insulating layer, the first contact electrode, and the second contact electrode can be improved, thus preventing the light-blocking layer from falling off and causing light leakage from the side of the LED chip.

[0108] The method for manufacturing a single-sided light-emitting LED chip provided in this embodiment achieves the beneficial effects of the single-sided light-emitting LED chip, while its manufacturing process is simple, convenient, and easy to mass-produce.

[0109] The display device provided in this embodiment includes the above-mentioned single-sided light-emitting LED chip, or a single-sided light-emitting LED chip prepared by the above method. The LED chip has single-sided light emission and no stray light crosstalk, and has better display effect to meet the requirements of size and light source clarity and in application fields with high requirements for near-eye or high integration.

[0110] Those skilled in the art should understand that in the disclosure of this utility model, the terms "lateral", "longitudinal", "upper", "lower", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as a limitation of this utility model.

[0111] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0112] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A single-sided light-emitting LED chip, characterized in that, include: substrate; A second contact electrode and an epitaxial stack are sequentially disposed on one side of the substrate. The epitaxial stack includes at least: a second type semiconductor layer, an active region, and a first type semiconductor layer sequentially stacked on the second contact electrode from bottom to top, and the second contact electrode is electrically connected to the second type semiconductor layer; wherein, the surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and the surface of the epitaxial stack facing away from the substrate is a light-emitting mesa; An insulating layer that covers the sidewalls of the epitaxial stack and extends to a portion of the surface of the first mesa; The first contact electrode covers the sidewalls of the epitaxial stack and the first mesa by means of the insulating layer, and extends to a portion of the light-emitting mesa to form an electrical connection with the first type of semiconductor layer; A light-blocking layer of insulating material is provided on a portion of the first platform surface to cover the sidewalls of the insulating layer and to engage with the first contact electrode; The light-blocking layer, the first contact electrode, and the second contact electrode constitute a light-blocking structure.

2. The single-sided light-emitting LED chip according to claim 1, characterized in that: The light-blocking layer covers the insulating layer located on the side wall of the first platform, and the first contact electrode covers at least a portion of the insulating layer near the side wall of the light-emitting platform.

3. The single-sided light-emitting LED chip according to claim 1, characterized in that: The second contact electrode comprises a reflective metallic material.

4. The single-sided light-emitting LED chip according to claim 1, characterized in that: The first contact electrode comprises a reflective metallic material, and the light-blocking layer comprises a reflective insulating material.

5. The single-sided light-emitting LED chip according to claim 1, characterized in that: The first contact electrode comprises a light-absorbing metal material, and the light-blocking layer comprises a light-absorbing insulating material.

6. The single-sided light-emitting LED chip according to claim 1, characterized in that: The light-blocking layer is a single-layer insulating layer or a multi-layer insulating layer.

7. The single-sided light-emitting LED chip according to claim 1, characterized in that: The light-blocking layer extends to a portion of the surface of the first contact electrode.

8. The single-sided light-emitting LED chip according to claim 1, characterized in that: The light-blocking layer extends to a portion of the surface of the insulating layer, and the first contact electrode covers the upper surface of the light-blocking layer.

9. The single-sided light-emitting LED chip according to claim 1, characterized in that: The contact interfaces between the light-blocking layer and the first contact electrode, the second contact electrode, and the insulating layer all have roughened surfaces.

10. A display device, characterized in that, include: The single-sided light-emitting LED chip according to any one of claims 1-9.

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