Bonding device

Abstract

The embodiment of the utility model provides a bonding device. The bonding device comprises a deformation part, an adsorption assembly and a temperature control assembly, the deformation part comprises a plurality of through holes; the adsorption assembly is communicated with the through hole and is used for adsorbing a to-be-bonded chip through the through hole; and the temperature control assembly is connected with the plurality of deformation areas of the deformation part and is used for respectively controlling the temperature of each deformation area, so that the deformation part deforms to a preset form and drives the to-be-bonded chip to deform.

Description

Technical Field

[0001] This application relates to the field of chip bonding technology, and more particularly to a bonding device. Background Technology

[0002] In semiconductor manufacturing processes, chip bonding is particularly important. Chip bonding includes two methods: W2W (Wafer to Wafer) bonding and D2W (Die to Wafer) bonding. W2W bonding refers to wafer-to-wafer bonding, while D2W bonding refers to chip-to-wafer bonding. Compared to W2W bonding, D2W offers higher yield and flexibility, and can be used to integrate different types of chips or chips from different nodes, making it an indispensable part of achieving heterogeneous integration.

[0003] However, in existing D2W bonding processes, planar bonding is mostly used to bond the chip to the wafer, resulting in numerous air bubbles between the chip and wafer bonding surfaces, leading to poor bonding strength. How to reduce air bubble generation and improve bonding strength during chip-wafer bonding is one of the urgent technical problems to be solved. Utility Model Content

[0004] In view of this, embodiments of this application provide a bonding device.

[0005] To achieve the above objectives, the technical solution of this application embodiment is implemented as follows:

[0006] This application provides a bonding device, including: a deformation part, an adsorption component, and a temperature control component;

[0007] The deformable part includes multiple through holes;

[0008] The adsorption component is connected to the through hole and is used to adsorb the chip to be bonded through the through hole;

[0009] The temperature control component is connected to multiple deformation regions of the deformation part and is used to control the temperature of each deformation region respectively, so that the deformation part is deformed to a preset shape and drives the chip to be bonded to deform.

[0010] In some embodiments, an insulating and heat-insulating material is provided between adjacent deformation regions;

[0011] The temperature control component is used to provide electrical signals to each of the deformation regions respectively;

[0012] The temperature of each deformation region of the deformation part is controlled by the intensity and / or duration of the electrical signal.

[0013] In some embodiments, the deformation portion includes a first deformation layer, an electrothermal layer, and a first insulating layer stacked sequentially; the outer surface of the first insulating layer is used to adsorb the chip to be bonded.

[0014] The temperature control component is connected to the heating layer, and the heating layer is used to generate heat under the action of the electrical signal provided by the temperature control component and adjust the temperature of the first deformation layer.

[0015] The first deformation layer deforms to a preset shape under the heat control of the electrothermal layer, and causes the electrothermal layer, the first insulating layer and the chip to be bonded to deform.

[0016] In some embodiments, the first deformation layer comprises polydimethylsiloxane; the electrothermal layer comprises carbon nanotubes.

[0017] In some embodiments, the bonding device further includes:

[0018] A shaping component connects the plurality of deformation regions and is used to control the deformation of each of the deformation regions by means of tensile force.

[0019] In some embodiments, the deformable portion includes a stacked second deformable layer and a second insulating layer; the second insulating layer is located on the side of the second deformable layer closer to the chip to be bonded;

[0020] The temperature control component is connected to the second deformation layer, and the temperature control component is used to adjust the temperature of the second deformation layer according to the intensity and duration of the electrical signal;

[0021] When the temperature of the second deformation layer is greater than or equal to a preset temperature, the shaping component controls the second deformation layer to deform to a preset shape, and drives the second insulating layer and the chip to be bonded to deform.

[0022] In some embodiments, the second deformation layer comprises a shape memory polymer; the preset temperature is greater than or equal to the transition temperature of the shape memory polymer.

[0023] In some embodiments, the adsorption assembly includes a connected adsorption conduit and a suction cup;

[0024] The suction cup is located between the adsorption channel and the deformable part;

[0025] Along a surface parallel to the chip to be bonded, the size of the bottom of the chuck is larger than the size of the chip to be bonded.

[0026] In some embodiments, the bonding device further includes:

[0027] A support layer is located on the side of the deformed portion away from the chip to be bonded, and surrounds the chuck and at least part of the channel.

[0028] The bonding apparatus provided in this application utilizes a temperature control component to control the temperature of each deformation region of the deformation section, thereby allowing the deformation section to deform to a preset shape, causing the chip to be bonded adsorbed on the bonding apparatus to deform. The center point of the deformed chip to be bonded contacts the target chip or target wafer first during bonding, which helps reduce the possibility of gas not being able to escape in time due to surface-to-surface contact, reducing bubbles at the bonding interface and improving the bonding quality between the target chip or target wafer and the chip to be bonded. Attached Figure Description

[0029] Figures 1A to 1B This is a schematic diagram of the bonding process of the bonding apparatus provided in the embodiments of this application;

[0030] Figure 2A A schematic diagram of the bonding device provided in the embodiments of this application is shown below;

[0031] Figure 2B This is a schematic diagram of the bonding process of the bonding apparatus provided in the embodiments of this application;

[0032] Figures 3 to 4 Figures 1 to 2 are top views of the deformed portion of the bonding device provided in the embodiments of this application;

[0033] Figure 5 A schematic diagram of the deformable part of the bonding device provided in the embodiments of this application is shown below;

[0034] Figure 6 Schematic diagram 2 of the bonding device provided in the embodiments of this application;

[0035] Figure 7 Schematic diagram 2 of the deformable part of the bonding device provided in the embodiments of this application;

[0036] Figure 8 Schematic diagram of the bonding device provided in the embodiments of this application Figure 3 ;

[0037] Figure 9 Schematic diagram of the bonding device provided in the embodiments of this application Figure 4 ;

[0038] Figure 10 A flowchart illustrating the steps of the bonding method provided in this application embodiment. Detailed Implementation

[0039] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0040] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, to avoid confusion with this application, some technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0041] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0042] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solution of this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0043] Figures 1A to 1B The diagram illustrates the bonding process at different stages of the bonding assembly. (For example...) Figure 1B As shown, in the D2W bonding process, the surface of chip 102 and the surface of wafer 103 need to be directly surface-to-surface bonded. During the bonding process of chip 102 and wafer 103 using bonding device 101, bonding bubbles may form at the bonding interface due to various reasons, severely reducing the bonding strength. For example, the surface of chip 102 or wafer 103 may not be clean enough, or particles may be present; the surface of chip 102 or wafer 103 may be uneven, or the edges may be warped; or the gas generated during the bonding process may not be released in time.

[0044] In view of this, embodiments of this application provide a bonding device, such as... Figure 2A As shown, the bonding device includes: a deformation part 201, an adsorption component 202, and a temperature control component 203;

[0045] The deformable part 201 includes a plurality of through holes 204;

[0046] Adsorption component 202 is connected to through hole 204 and is used to adsorb chip 205 to be bonded through through hole 204;

[0047] The temperature control component 203 is connected to multiple deformation regions of the deformation part 201 and is used to control the temperature of each deformation region respectively, so that the deformation part 201 is deformed to a preset shape and drives the chip 205 to be bonded to deform.

[0048] Under different temperature conditions, the deformable portion 201 has different shapes. Specifically, when adsorbing the chip 205 to be bonded, the deformable portion 201 is in a flat initial shape; when bonding the chip 205 to be bonded, the deformable portion 201 is in a bent preset shape. When the bonding device adsorbs the chip 205 to be bonded, since the adsorption component 202 is connected to the through hole 204 in the deformable portion 201, the adsorption component 202 can adsorb the chip 205 to be bonded through the through hole 204. The chip 205 to be bonded is adsorbed onto the lower surface of the deformable portion 201 by the adsorption force. Furthermore, since the deformable portion 201 is in a flat initial shape, the chip 205 to be bonded can be stably adsorbed onto the lower surface of the deformable portion 201.

[0049] The temperature control component 203 controls the temperature of each deformation region of the deformation section 201, thereby controlling the deformation (bending angle) of the deformation section 201 in each deformation region, so that the deformation section 201 deforms to a preset shape. For example... Figure 2B As shown, the deformed portion 201 causes the chip 205 to be bonded, which is adsorbed on its lower surface, to deform, causing the edge area of ​​the chip 205 to bend upwards and its center point to bulge downwards. When the chip 205 is bonded to the target wafer 206, the center point of the chip 205 can contact the target wafer 206 first, and the remaining parts of the chip 205 gradually fall down and contact the target wafer 206. This reduces bubbles at the bonding interface and improves the bonding strength between the target wafer 206 and the chip.

[0050] After the bonding device releases the chip 205 to be bonded, the temperature control component 203 can re-control the temperature of each deformation area, so that the deformation part 201 returns to its flat initial shape, so that the deformation part 201 in its initial shape can be used to adsorb the chip 205 to be bonded next time.

[0051] It is understood that the bonding apparatus provided in this application embodiment is also applicable to bonding the chip to be bonded and the target chip, that is, using this bonding apparatus to realize D2D (Die to Die) bonding, so as to improve the bonding strength between the target chip and the chip to be bonded.

[0052] The bonding apparatus provided in this application embodiment utilizes a temperature control component 203 to control the temperature of each deformation region of the deformation section 201, thereby allowing the deformation section 201 to deform to a preset shape, causing the chip 205 adsorbed on the bonding apparatus to deform. The center point of the deformed chip 205 contacts the target chip or target wafer first during bonding, which helps reduce the possibility of gas not being able to escape in time due to surface-to-surface contact, reducing bubbles at the bonding interface and improving the bonding quality between the target chip or target wafer and the chip to be bonded.

[0053] It should be noted that the bonding device in this embodiment does not include the chip 205 to be bonded.

[0054] In some embodiments, such as Figure 3 As shown, an insulating and heat-insulating material 302 is provided between adjacent deformation regions 301;

[0055] Temperature control component 203 is used to provide electrical signals to each deformation region 301 respectively;

[0056] The temperature of each deformation region 301 of the deformation part is controlled by the intensity and / or duration of the electrical signal.

[0057] Since the deformation of the edge region of the deformation section 201 differs from that of the central region, independent control of each deformation region 301 can be achieved by providing electrical signals to each deformation region 301 separately. The edge region refers to the area farther from the center point of the deformation section, while the central region refers to the area near the center point of the deformation section. The central region and the edge region are separated by an insulating and heat-insulating material 302.

[0058] Specifically, an increased or longer electrical signal can be provided to each deformed region in the edge region, while a smaller or shorter electrical signal can be provided to each deformed region in the center region, so that the deformed parts in the edge region have a larger deformation than those in the center region.

[0059] The specific division of each deformation region can be designed according to the preset shape of the deformable part. The embodiments of this application do not limit the specific shape and size of each deformation region. For example,... Figure 3 and Figure 4 As shown, the deformed region can be rectangular, elliptical, or irregular in shape. (Continue to refer to...) Figure 4 The edge region of the deformable part can be divided into four deformation regions, namely A1, A2, A3, and A4; the central region of the deformable part can be divided into four deformation regions, namely A5, A6, A7, and A8. By controlling the temperature of these eight deformation regions respectively, the deformable part can be deformed into a preset shape.

[0060] In some embodiments, the insulating and heat-insulating material includes polyimide, which, due to the flexibility of its molecular chains, can adapt to shape changes of the deformable portion without breaking chemical bonds.

[0061] In some embodiments, such as Figure 5 As shown, the deformation section 201 includes a first deformation layer 501, an electrothermal layer 502 and a first insulating layer 503 stacked in sequence; the outer surface of the first insulating layer 503 is used to adsorb the chip 205 to be bonded.

[0062] The temperature control component 203 is connected to the heating layer 502. The heating layer 502 is used to generate heat under the action of the electrical signal provided by the temperature control component 203 and to adjust the temperature of the first deformation layer 501.

[0063] The first deformation layer 501 is deformed to a preset shape under the heat control of the heating layer 502, and the heating layer 502, the first insulating layer 503 and the chip 205 to be bonded are deformed.

[0064] The stable temperature of the heating layer 502 varies with the intensity of the received electrical signal. The stable temperature refers to the temperature at which the heating layer 502 can stably maintain its temperature under a certain electrical signal intensity. In some embodiments, the stable temperature of the heating layer 502 increases with the increase of the voltage signal. For example, when a 4V voltage signal is provided to the heating layer, the heating layer 502 can heat up and stabilize at 50°C in a relatively short time; when a 5V voltage signal is provided to the heating layer, the heating layer 502 can heat up and stabilize at 100°C in a relatively short time.

[0065] The first deformation layer 501 is sensitive to temperature changes, and its temperature changes rapidly with the temperature of the heating layer 502. The first deformation layer 501, which is stacked with the heating layer 502, deforms under thermal stimulation, and its deformation is temperature-dependent. For example, when the temperature of the first deformation layer 501 is 50°, its bending angle is 10°; when the temperature of the first deformation layer 501 is 100°, its bending angle is 50°. Therefore, the temperature of the heating layer 502 can be controlled by electrical signals of different intensities, thereby controlling the temperature of the first deformation layer 501 and causing it to deform to the corresponding bending state.

[0066] It should be noted that the specific relationship between the temperature and bending angle of the first deformation layer is related to the specific material and thickness of the first deformation layer. Appropriate materials and thicknesses can be selected based on the bending state of each region of the first deformation layer under a preset shape to determine the appropriate deformation temperature for each deformation region.

[0067] In one specific embodiment, a 4V voltage signal can be provided to the heating layer 502 in the central region and a 5V voltage signal can be provided to the heating layer 502 in the edge region. This allows the first deformation layer 501 in the central region to have a smaller bending angle, while the first deformation layer 501 in the edge region has a larger bending angle. The edges of the entire deformation portion 201 warp upwards, causing the adsorbed chip 205 to deform, resulting in the center of the chip 205 bulging downwards and preferentially contacting the target wafer to reduce bonding bubbles at the bonding interface.

[0068] The first insulating layer 503, which contacts the chip 205 to be bonded, has insulating properties, effectively preventing electrostatic discharge (ESD) from damaging the chip 205. Furthermore, the first insulating layer 503 has a certain degree of flexibility, ensuring it does not interfere with the deformation of the chip 205 caused by the first deformation layer 501. In some embodiments, the thickness of the first insulating layer 503 can be less than the thickness of the first deformation layer 501, which facilitates its deformation following that of the first deformation layer 501.

[0069] The first insulating layer 503 may include materials such as polyimide, polyethylene, or polyethylene terephthalate. Polyimide possesses excellent insulating properties. Its dielectric constant is around 3.4, allowing it to withstand high electric field strengths without breakdown. Furthermore, the polyimide molecular chains have a certain degree of flexibility, and a thin polyimide film can adapt well to the shape changes of the first deformation layer 501. Polyethylene also exhibits excellent insulating properties. Its high volume resistivity effectively prevents the conduction of static electricity. Moreover, low-density polyethylene has good flexibility. There is sufficient space between the polyethylene molecular chains, allowing them to slide relative to each other under external force, thus achieving deformation. Polyethylene terephthalate also possesses good insulating properties and can withstand high voltages without breakdown. Polyethylene terephthalate film also has high strength and toughness, and can maintain its integrity during the deformation of the first deformation layer. In addition, due to its certain elastic modulus, it can deform to a certain extent with the deformation of the first deformation layer without hindering the deformation of the chip to be bonded.

[0070] It is understood that the first insulating layer itself can be an insulating and heat-insulating material, and the first insulating layer and the aforementioned insulating and heat-insulating material can be the same material. However, insulating and heat-insulating materials are still required between the first deformation layers in different deformation regions, or between the electrothermal layers in different deformation regions.

[0071] Additionally, it should be noted that the deformation section includes through holes; that is, the stacked first deformation layer, electrothermal layer, and first insulating layer all include through holes, and the size and position of each hole are consistent. When the adsorption assembly adsorbs the chip to be bonded, gas can pass through these holes, allowing the chip to be adsorbed onto the lower surface of the first insulating layer.

[0072] In some embodiments, the first deformation layer comprises polydimethylsiloxane; the electrothermal layer comprises carbon nanotubes.

[0073] Because polydimethylsiloxane has good temperature resistance, it can be used for a long time within the operating temperature range, which helps to improve the service life of the bonding device.

[0074] In some embodiments, such as Figure 6 As shown, the bonding device also includes a shaping component 601, which connects multiple deformation regions and is used to control the deformation of each deformation region 301 by means of tensile force.

[0075] The shaping component 601 can assist the deformable part in deforming to a preset shape through tension ropes. Specifically, the shaping component 601 can provide different tensions to the deformable parts of each deformation area so that the deformable parts of each deformation area deform under tension.

[0076] In some embodiments, the shaping component 601 may connect only a portion of the deformation region. For example, by controlling the deformation region of the peripheral area, the deformation portion can be assisted in deforming to a preset shape.

[0077] Furthermore, the deformable regions connected to the shaping components are symmetrically distributed, and the same tensile force is applied to these deformable regions, which helps the center point of the chip to be bonded to contact the target wafer preferentially.

[0078] In some embodiments, such as Figure 7 As shown, the deformation section 201 includes a second deformation layer 701 and a second insulating layer 702 stacked together; the second insulating layer 702 is located on the side of the second deformation layer 701 close to the chip to be bonded.

[0079] The temperature control component 203 is connected to the second deformation layer 701, and the temperature control component 203 is used to adjust the temperature of the second deformation layer 701 according to the strength and duration of the electrical signal.

[0080] When the temperature of the second deformation layer 701 is greater than or equal to the preset temperature, the shaping component controls the second deformation layer to deform to the preset shape, and drives the second insulating layer 702 and the chip 205 to be bonded to deform.

[0081] The second deformation layer 701 exhibits different elasticities at different temperatures. At room temperature, the second deformation layer 701 has low elasticity and a stable shape. When the temperature of the second deformation layer 701 is greater than or equal to a preset temperature, the second deformation layer 701 exhibits greater elasticity and can deform to a preset shape with the assistance of the shaping component 601. The second deformation layer 701 drives the deformation of the chip 205 to be bonded, allowing the center portion to contact first and the edge portion to contact later during bonding, reducing bonding bubbles.

[0082] In some embodiments, after cooling to below a preset temperature, the second deformable layer 701 can maintain the preset shape even after the external force constraint provided by the shaping component is released. That is, when the bonding device releases the chip 205 to be bonded, the temperature of the second deformable layer can be lower than the preset temperature.

[0083] In some embodiments, the second deformable layer 701 can be allowed to cool naturally to below a preset temperature by stopping the supply of electrical signals to it. In other embodiments, the cooling time can be reduced by adding cooling components. For example, the temperature of the second deformable layer 701 can be reduced more quickly by using methods such as air cooling or water cooling, thereby further reducing the process time.

[0084] After the bonding device completely releases the chip to be bonded, an electrical signal can be provided to the second deformation layer 701 again to control the temperature of each deformation area of ​​the deformation part 201 to rise to the preset temperature, so that the second deformation layer 701 can automatically return to its initial shape.

[0085] Similar to the first insulating layer described above, the second insulating layer also possesses insulating properties, effectively preventing the chip to be bonded from being electrostatically damaged. Furthermore, the second insulating layer has a certain degree of flexibility, ensuring it does not interfere with the deformation of the chip to be bonded caused by the second deformation layer. The second insulating layer may include materials such as polyimide, polyethylene, or polyethylene terephthalate.

[0086] In some embodiments, the second deformation layer comprises a shape memory polymer; the preset temperature is greater than or equal to the transition temperature of the shape memory polymer.

[0087] Shape memory polymers are polymeric materials that, under external stimuli (thermal / electrical), can adjust their shape, stress, or strain and return to their initial form. Specifically, when the temperature is above the shape memory polymer's transition temperature (glass transition temperature or melting temperature), the polymer can deform under external force. Lowering the temperature below the transition temperature allows it to retain its deformed shape even after the external force is released. When the temperature rises above the transition temperature again, the polymer releases its stored external force and automatically returns to its initial form.

[0088] Taking electrical stimulation as an example, the second deformation layer can be a composite material including a shape memory polymer and a conductive material. For example, a shape memory polymer / carbon nanotube material. It can respond to electrical stimulation, allowing the shape of the second deformation layer to be remotely controlled, thereby adjusting the shape of the chip to be bonded adsorbed on the deformation portion to a form conducive to bonding. It should be noted that the embodiments of this application do not limit the specific type of conductive material; in addition to carbon nanotubes mentioned above, it can also be graphene, carbon black, gold, or silver, etc.

[0089] In some embodiments, such as Figure 8 As shown, the adsorption assembly 202 includes an adsorption pipe 801 and a suction cup 802 that are connected to each other.

[0090] The suction cup 802 is located between the adsorption channel 801 and the deformation part 201;

[0091] Along the surface parallel to the chip 205 to be bonded, the bottom dimension of the chuck 802 is larger than the dimension of the chip 205 to be bonded.

[0092] Under the same vacuum pressure, the larger the size of the suction cup, the greater the adsorption force provided by the adsorption assembly. On the surface parallel to the chip to be bonded, if the length of the suction cup is greater than the length of the chip, or if the orthogonal projection area of ​​the suction cup on the horizontal plane is greater than the area of ​​the chip, it is beneficial to improve the adsorption force between the bonding device and the chip, which can effectively reduce the risk of chip detachment and improve the adsorption stability between the deformed part and the chip during deformation.

[0093] Understandably, the through holes can be evenly distributed in the deformed part under the chuck, so that the force is uniform in each area of ​​the chip to be bonded, further increasing the adsorption stability.

[0094] Figure 9 A structural perspective view of the bonding apparatus provided in an embodiment of this application is shown, as follows: Figure 9 As shown, the bonding device further includes:

[0095] The support layer 901 is located on the side of the deformable part 201 away from the chip 205 to be bonded, and surrounds the suction cup 802 and at least part of the adsorption channel 801.

[0096] The support layer 901 has a certain degree of rigidity and can be used to support the deformable part 201 and fix the adsorption assembly 202, but its shape can also change slightly with the deformation of the deformable part 201. In this embodiment, part of the adsorption channel and the suction cup are disposed in the support layer 901, that is, the height of the support layer 901 is greater than the height of the suction cup 802. However, this embodiment does not limit the height of the support layer to the height of the suction cup. In some other embodiments, the height of the support layer can be equal to the height of the suction cup, in which case the support layer only wraps around the suction cup.

[0097] The material of the support layer 901 may include materials with a certain degree of flexibility, such as polyimide and polytetrafluoroethylene. Among them, the interaction force between the polytetrafluoroethylene molecular chains allows the molecular chains to slide and adjust to a certain extent when subjected to a small external force, thereby producing a small elastic deformation, and returning to the original shape after the force is removed, while maintaining the overall relative stability.

[0098] Based on the same inventive concept, embodiments of this application also provide a bonding method, which uses the aforementioned bonding apparatus for bonding, such as... Figure 10 As shown, the bonding methods include:

[0099] Step S101: Adsorb the chip to be bonded onto the side of the deformed part away from the adsorption component.

[0100] Step S102: The temperature of each deformation area is controlled by the temperature control component, so that the deformation part deforms and drives the chip to be bonded to deform to the preset shape.

[0101] Step S103: Bond the target chip or target wafer to the chip to be bonded.

[0102] With the deformed portion in its initial state, a negative pressure is provided by the adsorption component. The chip to be bonded is adsorbed onto the lower surface of the deformed portion by the adsorption force. The temperature control component controls the temperature of each deformed area, causing at least some of the deformed areas to heat up and deform. The deformed portion causes the chip to be bonded on its lower surface to deform, resulting in the edge area of ​​the chip bending upwards and its center area bulging downwards. When the chip to be bonded is bonded to the target wafer, the center point of the chip to be bonded can contact the target wafer first, reducing the likelihood of air bubbles forming at the bonding interface and improving the bonding effect.

[0103] The bonding method provided in this application embodiment controls the temperature of each deformation region of the deformation part through a temperature control component, thereby allowing the deformation part to deform to a preset shape, causing the chip to be bonded adsorbed on the bonding device to deform. The center point of the deformed chip to be bonded contacts the target wafer first during bonding, which helps reduce the possibility of gas not being able to escape in time due to surface-to-surface contact, reducing bubbles at the bonding interface and improving bonding quality.

[0104] In some embodiments, the deformable portion includes a first deformable layer 501, an electrothermal layer 502, and a first insulating layer 503 stacked together. When the deformable portion 201 is in its initial state, a negative pressure is provided by the adsorption component 202. The chip 205 to be bonded is adsorbed onto the lower surface of the deformable portion 201 by the adsorption force. The temperature control component 203 provides different voltage signals to the electrothermal layers 502 in each deformable region. For example, a 6V signal is provided to the electrothermal layers 502 in the edge region, and a 4V signal is provided to the electrothermal layers 502 in the center, causing the first deformable layer 501 in the edge region to have a larger bending state; the first deformable layer in the center region has a smaller bending state. The deformed portion 201 causes the chip 205 to be bonded adsorbed on its lower surface to deform, causing the edge region of the chip 205 to bend upwards and its center region to bulge downwards. When bonding a chip to be bonded to a target wafer, the center point of the chip to be bonded can contact the target wafer first, making it less likely for bubbles to form at the bonding interface, which helps to improve the bonding effect.

[0105] In some embodiments, the deformable portion 201 includes a stacked second deformable layer 701 and a second insulating layer 702. When the deformable portion 201 is in its initial state, a negative pressure is provided by the adsorption component 202. The chip 205 to be bonded is adsorbed onto the lower surface of the deformable portion 201 by the adsorption force. The temperature control component 203 provides different magnitude electrical signals and energizing durations to the second deformable layers 701 in each deformable region. For example, a 6A current signal is provided to the second deformable layer 701 in the edge region for 2 seconds, and a 4A current signal is provided to the second deformable layer 701 in the center region for 1 second, making it easier for the second deformable layer 701 in the edge region to deform under the tension provided by the shaping component 601. The deformed deformable portion 201 causes the chip 205 to be bonded adsorbed on its lower surface to deform, causing the edge region of the chip 205 to bend upwards and its center region to bulge downwards. When bonding a chip to be bonded to a target wafer, the center point of the chip to be bonded can contact the target wafer first, making it less likely for bubbles to form at the bonding interface, which helps to improve the bonding effect.

[0106] The various embodiments / implementations provided in this application can be combined with each other without creating contradictions. The above descriptions are merely preferred embodiments of this application and are not intended to limit this application. For those skilled in the art, this application can have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A bonding device, characterized in that, include: Deformation section, adsorption assembly, and temperature control assembly; The deformable part includes multiple through holes; The adsorption component is connected to the through hole and is used to adsorb the chip to be bonded through the through hole; The temperature control component is connected to multiple deformation regions of the deformation part and is used to control the temperature of each deformation region respectively, so that the deformation part is deformed to a preset shape and drives the chip to be bonded to deform.

2. The bonding apparatus according to claim 1, characterized in that, Insulating and heat-insulating materials are provided between adjacent deformation regions; The temperature control component is used to provide electrical signals to each of the deformation regions respectively; The temperature of each deformation region of the deformation part is controlled by the intensity and / or duration of the electrical signal.

3. The bonding apparatus according to claim 2, characterized in that, The deformation section includes a first deformation layer, an electrothermal layer, and a first insulating layer stacked sequentially; the outer surface of the first insulating layer is used to adsorb the chip to be bonded. The temperature control component is connected to the heating layer, and the heating layer is used to generate heat under the action of the electrical signal provided by the temperature control component and adjust the temperature of the first deformation layer. The first deformation layer deforms to a preset shape under the heat control of the electrothermal layer, and causes the electrothermal layer, the first insulating layer and the chip to be bonded to deform.

4. The bonding apparatus according to claim 3, characterized in that, The first deformation layer comprises polydimethylsiloxane; the electrothermal layer comprises carbon nanotubes.

5. The bonding apparatus according to claim 2, characterized in that, Also includes: A shaping component connects the plurality of deformation regions and is used to control the deformation of each of the deformation regions by means of tensile force.

6. The bonding apparatus according to claim 5, characterized in that, The deformable portion includes a stacked second deformable layer and a second insulating layer; the second insulating layer is located on the side of the second deformable layer closer to the chip to be bonded; The temperature control component is connected to the second deformation layer, and the temperature control component is used to adjust the temperature of the second deformation layer according to the intensity and duration of the electrical signal; When the temperature of the second deformation layer is greater than or equal to a preset temperature, the shaping component controls the second deformation layer to deform to a preset shape, and drives the second insulating layer and the chip to be bonded to deform.

7. The bonding apparatus according to claim 6, characterized in that, The second deformation layer comprises a shape memory polymer; the preset temperature is greater than or equal to the transition temperature of the shape memory polymer.

8. The bonding apparatus according to any one of claims 1 to 7, characterized in that, The adsorption assembly includes a connected adsorption pipe and a suction cup; The suction cup is located between the adsorption channel and the deformable part; Along a surface parallel to the chip to be bonded, the size of the bottom of the chuck is larger than the size of the chip to be bonded.

9. The bonding apparatus according to claim 8, characterized in that, Also includes: A support layer is located on the side of the deformed portion away from the chip to be bonded, and surrounds the chuck and at least part of the channel.

10. The bonding apparatus according to claim 9, characterized in that, The support layer comprises polyimide or polytetrafluoroethylene.

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