Chemical vapor deposition equipment

Abstract

The utility model provides chemical vapor deposition equipment. The chemical vapor deposition equipment comprises a reaction cavity, one end of the discharge pipeline is communicated with the reaction cavity, and the other end is connected with a pump; the remote plasma source is communicated with the reaction cavity through a first pipeline; one end of the second pipeline is communicated with the first pipeline, and the other end of the second pipeline is communicated with the discharge pipeline. According to the chemical vapor deposition equipment provided by the utility model, the remote plasma source is communicated with the reaction cavity through the first pipeline, and the remote plasma source is connected with the discharge pipeline through the second pipeline, so that plasmas, such as fluorine ions, conveyed by the remote plasma source can react with pollution particles in the reaction cavity and the discharge pipeline; and finally, the reacted product is pumped away from the reaction cavity and the discharge pipeline through the pump, so that the cleanliness in the reaction cavity and the discharge pipeline is ensured, the wafer is prevented from being polluted, and the reliability of wafer treatment is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a chemical vapor deposition apparatus. Background Technology

[0002] Chemical vapor deposition (CVD) is a process technology that deposits solid thin films on the surface of a wafer through chemical reactions. It is widely used in semiconductor manufacturing, integrated circuits, and other fields, and is one of the key methods for fabricating various thin films in three-dimensional devices. However, during the CVD process, in addition to forming thin films on the wafer surface, particulate matter is also formed in the reaction chamber. If this particulate matter is not removed in time, it will accumulate over time and contaminate the wafer.

[0003] Currently, the reaction chamber is connected to a pump via pipes. The pump draws particulate matter out of the reaction chamber through the pipes, thus improving the particulate matter problem inside the reaction chamber. However, because some particulate matter has a certain degree of stickiness, some particles adhere to the pipe joints and bends. Over time, this accumulation can cause blockages in the pipes, thus affecting the pump's ability to remove contaminant particles from the reaction chamber. Utility Model Content

[0004] The purpose of this invention is to provide a chemical vapor deposition device that can not only remove particulate matter in the reaction chamber, but also remove contaminant particles in the pipeline, avoiding the possibility of pipeline blockage and thus ensuring the reliability of wafer processing.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a chemical vapor deposition apparatus, including a reaction chamber;

[0006] The discharge pipe has one end connected to the reaction chamber and the other end used to connect to a pump;

[0007] A remote plasma source is connected to the reaction chamber via a first conduit;

[0008] The second pipe has one end connected to the first pipe and the other end connected to the discharge pipe.

[0009] The beneficial effects of the chemical vapor deposition equipment provided by this utility model are as follows: a remote plasma source is connected to the reaction chamber through a first pipe, and the remote plasma source is connected to the exhaust pipe through a second pipe. The plasma delivered by the remote plasma source, such as fluoride ions, can react with the contaminating particles in the reaction chamber and the exhaust pipe. Finally, the reaction products are extracted from the reaction chamber and the exhaust pipe by a pump to ensure the cleanliness of the reaction chamber and the exhaust pipe, avoid wafer contamination, and improve the reliability of wafer processing.

[0010] In some embodiments, the chemical vapor deposition apparatus further includes a first control valve;

[0011] The first control valve is located on the first pipeline and is used to control the opening and closing of the first pipeline;

[0012] One end of the second pipe is located between the first control valve and the remote plasma source. Its advantage lies in that, by setting a first control valve on the first pipe to control its opening and closing, when it is necessary to transport fluoride ions through the second pipe to the discharge pipe, the first control valve can be closed, thereby improving the reliability of removing particulate matter from the discharge pipe.

[0013] In some embodiments, the chemical vapor deposition apparatus further includes a second control valve;

[0014] The second control valve is located on the second pipeline and is used to control the opening and closing of the second pipeline. Its advantage is that by installing the second control valve on the second pipeline, when it is necessary to deliver fluoride ions into the reaction chamber, the second control valve can be closed, thereby improving the reliability of removing particulate matter from the reaction chamber.

[0015] In some embodiments, the chemical vapor deposition apparatus further includes a third control valve;

[0016] The third control valve is located in the discharge pipe and is used to control the opening and closing of the discharge pipe. Its advantage is that by setting a third control valve on the discharge pipe to control its opening or closing, when it is necessary to remove pollutant particles from the discharge pipe, the third control valve can be closed to prevent plasma delivered from the remote plasma source from entering the reaction chamber, thereby improving the treatment effect on pollutant particles in the discharge pipe.

[0017] In some embodiments, the other end of the second pipe is close to the bend structure and / or interface structure of the discharge pipe;

[0018] The remote plasma source can deliver the prepared fluoride ions to the bend structure and / or the interface structure. Its advantage lies in improving the removal of contaminant particles deposited at the bend structure and / or interface structure by positioning the other end of the second pipe close to the bend structure / interface structure of the discharge pipe.

[0019] In some embodiments, the chemical vapor deposition apparatus further includes a flow guiding device connected to the discharge pipe;

[0020] The flow guiding device is located between the third control valve and the other end of the second pipe, and is used to deliver inert gas within the discharge pipe. Its advantage lies in that by providing a flow guiding device on the discharge pipe, the airflow within the discharge pipe is directed towards the pump, thereby controlling the direction of the airflow within the discharge pipe and improving the reliability of removing contaminant particles deposited at bends and / or interface structures.

[0021] In some embodiments, the inner wall of the bend structure is provided with a chamfered structure. The advantage of this is that by providing a chamfered structure on the inner wall of the bend structure, the reliability of removing contaminant particles deposited at the bend structure is improved.

[0022] In some embodiments, the chamfer structure is a rounded corner.

[0023] In some embodiments, the chemical vapor deposition apparatus further includes a spray element located within the reaction chamber. The spray element is disposed on the top inner wall of the reaction chamber. The spray element has an air inlet channel and a plurality of air outlet channels. The air inlet ends of the plurality of air outlet channels are all connected to the air inlet channel, and the air outlet ends of the air outlet channels are spaced apart on the bottom surface of the spray element.

[0024] The first pipe is connected to the air intake channel.

[0025] In some embodiments, the chemical vapor deposition apparatus further includes a support disk disposed within the reaction chamber, the support disk being disposed opposite to the spray element, and the support disk being used to support the wafer. Attached Figure Description

[0026] Figure 1 A schematic diagram of the structure of the chemical vapor deposition apparatus provided in the embodiments of this utility model;

[0027] Figure 2 A cross-sectional view of the spray component along its axial direction in an embodiment of this utility model.

[0028] Figure label:

[0029] Reaction chamber 1, spray component 10, air inlet channel 101, air outlet channel 102, cavity 103, support plate 11, discharge pipe 2, pump 21, bend structure 22, chamfer structure 23, remote plasma source 3, first pipe 4, second pipe 5, first control valve 6, second control valve 7, third control valve 8, flow guiding device 9. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this utility model pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but does not exclude other elements or objects.

[0031] This utility model embodiment provides a chemical vapor deposition apparatus, see reference. Figure 1 As shown, the chemical vapor deposition apparatus includes a reaction chamber 1, an exhaust pipe 2, a remote plasma source 3, and a second pipe 5. One end of the exhaust pipe 2 is connected to the bottom of the reaction chamber 1, and the other end is connected to an external pump 21. The exhaust pipe, in conjunction with the pump 21, is used to discharge contaminant particles from the reaction chamber 1. The remote plasma source 3 is connected to the top of the reaction chamber 1 via a first pipe 4. The remote plasma source 3 is used to decompose inert gases or process gases into plasma, and then transport the plasma through the first pipe 4 into the reaction chamber 1 to react with the contaminant particles. One end of the second pipe 5 is connected to the first pipe 4, and the other end is connected to the exhaust pipe 2, allowing the plasma generated by the remote plasma source 3 to be directly delivered into the exhaust pipe 2 to react with the contaminant particles located within it.

[0032] In this embodiment, the remote plasma source 3 is used to decompose NF3 into F ions, and transport the F ions through the first pipe 4 to the reaction chamber 1 to react with contaminant particles, or transport the F ions through the second pipe 5 to the discharge pipe 2 to react with contaminant particles. This improves the reliability of cleaning contaminant particles in the discharge pipe 2, avoids the F ions from being consumed in the reaction chamber 1 and affecting the cleaning effect in the discharge pipe 2, thereby ensuring the cleanliness of the reaction chamber 1 and the discharge pipe 2, avoiding wafer contamination, and improving the reliability of wafer processing.

[0033] refer to Figure 1As shown, in some embodiments, the chemical vapor deposition apparatus further includes a first control valve 6, which is disposed on the first pipe 4 and is used to control the opening and closing of the first pipe 4. One end of the second pipe 5 is located between the first control valve 6 and the remote plasma source 3.

[0034] In this embodiment, the first control valve 6 can be a manually controlled valve or an electrically controlled valve. By setting the first control valve 6 on the first pipeline 4 to control the opening and closing of the first pipeline 4, when it is necessary to transport fluoride ions through the second pipeline 5 to the discharge pipeline 2, the first control valve 6 can be closed to improve the reliability of removing pollutant particles from the discharge pipeline 2.

[0035] refer to Figure 1 As shown, in some embodiments, the chemical vapor deposition apparatus further includes a second control valve 7, which is disposed in the second pipeline 5 and is used to control the opening and closing of the second pipeline 5.

[0036] In this embodiment, the second control valve 7 can be a manually controlled valve or an electrically controlled valve. By setting the second control valve 7 on the second pipeline 5, when it is necessary to transport fluoride ions into the reaction chamber 1, the second control valve 7 can be closed to improve the reliability of removing pollutant particles from the reaction chamber 1.

[0037] refer to Figure 1 As shown, in some embodiments, the chemical vapor deposition apparatus further includes a third control valve 8, which is located in the discharge pipe 2 and is used to control the opening and closing of the discharge pipe 2.

[0038] In this embodiment, the second control valve 7 can also be a manually controlled valve or an electrically controlled valve. By setting the third control valve 8 on the discharge pipe 2 to control the opening or closing of the discharge pipe 2, when it is necessary to remove pollutant particles in the discharge pipe 2, the third control valve 8 can be closed to prevent the plasma delivered by the remote plasma source 3 from entering the reaction chamber 1, thereby improving the treatment effect on pollutant particles in the discharge pipe 2.

[0039] refer to Figure 1 As shown, in some embodiments, the other end of the second pipe 5 is close to the bend structure 22 and / or interface structure of the discharge pipe 2, and the remote plasma source 3 can transport the prepared fluoride ions to the bend structure 22 and / or the interface structure.

[0040] In this embodiment, by placing the other end of the second pipe 5 close to the bend structure 22 and / or the interface structure of the discharge pipe 2, plasma can be directly delivered to the bend structure 22 and / or the interface structure, thereby improving the removal effect of pollutant particles deposited at the bend structure 22 and / or the interface structure.

[0041] refer to Figure 1 As shown, in some embodiments, the chemical vapor deposition apparatus further includes a flow guide 9 connected to the discharge pipe 2, the flow guide 9 being located between the third control valve 8 and the other end of the second pipe 5, for conveying inert gas within the discharge pipe 23.

[0042] In this embodiment, by providing the flow guiding device 9 on the discharge pipe 2, the airflow in the discharge pipe 2 is directed toward the pump 21, thereby controlling the flow direction of the airflow in the discharge pipe 2 and improving the reliability of removing contaminant particles deposited at the bend structure 22 and / or the interface structure. The inert gas transported by the flow guiding device 9 can be nitrogen.

[0043] refer to Figure 1 As shown, in some embodiments, the inner sidewall of the bend structure 22 is provided with a chamfer structure 23.

[0044] In this embodiment, a chamfered structure 23 is provided on the inner sidewall of the bend structure 22 to improve the reliability of removing pollutant particles deposited at the bend structure 22.

[0045] In some specific embodiments, the chamfer structure 23 can be configured as a rounded corner.

[0046] refer to Figure 1 and Figure 2 As shown, in some embodiments, the chemical vapor deposition apparatus further includes a spray element 10 located within the reaction chamber 1. The spray element 10 is disposed on the top inner wall of the reaction chamber 1. The spray element 10 has an air inlet channel 101 and a plurality of air outlet channels 102. The air inlet ends of the plurality of air outlet channels 102 are all connected to the air inlet channel 101. The air outlet ends of the air outlet channels 102 are spaced apart on the bottom surface of the spray element 10. The first pipe 4 is connected to the air inlet channel 101.

[0047] Furthermore, the spray component 10 has a cavity 103 inside for buffering gas, and the cavity 103 is connected to the air inlet channel 101 and several air outlet channels 102.

[0048] In this embodiment, the plasma enters the cavity 103 through the first pipe 4 and the air inlet channel 101 for buffering, and the plasma can be evenly introduced into the reaction chamber 1 from several of the air outlet channels 102 to improve the cleaning effect on each area in the reaction chamber 1.

[0049] In some embodiments, the chemical vapor deposition apparatus further includes a support disk 11 disposed in the reaction chamber 1, the support disk 11 being disposed opposite to the spray element 10, and the support disk 11 being used to support the wafer.

[0050] Although the embodiments of this utility model have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of this utility model. Moreover, the utility model described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A chemical vapor deposition apparatus characterized by comprising: The utility model relates to a fluorine ion preparation device, comprising: a reaction cavity; an exhaust pipeline, one end of which is communicated with the reaction cavity, and the other end of which is used for connecting a pump; a remote plasma source, which is communicated with the reaction cavity through a first pipeline; a second pipeline, one end of which is communicated with the first pipeline, and the other end of which is communicated with the exhaust pipeline.

2. The chemical vapor deposition apparatus according to claim 1, wherein Further comprising a first control valve; the first control valve is arranged on the first pipeline, and is used for controlling the opening and closing of the first pipeline; one end of the second pipeline is located between the first control valve and the remote plasma source.

3. The chemical vapor deposition apparatus according to claim 1, wherein Further comprising a second control valve; the second control valve is arranged on the second pipeline, and is used for controlling the opening and closing of the second pipeline.

4. The chemical vapor deposition apparatus of claim 1, wherein Further comprising a third control valve; the third control valve is arranged on the exhaust pipeline, and is used for controlling the opening and closing of the exhaust pipeline.

5. The chemical vapor deposition apparatus according to claim 4, wherein the other end of the second pipeline is close to a bending structure and / or an interface structure of the exhaust pipeline; the remote plasma source can deliver the prepared fluorine ions to the bending structure and / or the interface structure.

6. The chemical vapor deposition apparatus according to claim 4, wherein Further comprising a flow guide device connected with the exhaust pipeline; the flow guide device is located between the third control valve and the other end of the second pipeline, and is used for delivering inert gas in the exhaust pipeline.

7. The chemical vapor deposition apparatus according to claim 5, wherein The inner side wall of the bending structure is provided with a chamfer structure.

8. The chemical vapor deposition apparatus of claim 7, wherein, The chamfer structure is a rounded chamfer.

9. The chemical vapor deposition apparatus according to any one of claims 1 to 8, wherein Further comprising a spraying member located in the reaction cavity, the spraying member is arranged on the top inner side wall of the reaction cavity, the spraying member has an air inlet channel and a plurality of air outlet channels, the air inlet ends of the plurality of air outlet channels are communicated with the air inlet channel, and the air outlet ends of the air outlet channels are arranged on the bottom surface of the spraying member in a spaced manner. The first pipeline is communicated with the air inlet channel.

10. The chemical vapor deposition apparatus of claim 9, wherein, Further comprising a bearing disc arranged in the reaction cavity, the bearing disc is arranged opposite to the spraying member, and the bearing disc is used for bearing a wafer.

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