VCO (Voltage Controlled Oscillator) structure for UWB (Ultra Wide Band) radio frequency universal configurable radio frequency microcomponent

Abstract

The utility model discloses a VCO (Voltage Controlled Oscillator) structure for an ultra-wideband radio frequency universal configurable radio frequency microcomponent, which belongs to the field of oscillators and prevents energy loss caused by the fact that high-frequency noise in tuning voltage enters the VCO by introducing a filtering module and high-frequency signals of the VCO leak to the tuning voltage. The bias module is used for introducing source negative feedback to the differential amplification compensation module, so that the noise of the VCO is suppressed, the working point is stabilized, and the anti-interference capability is improved; positive feedback is formed on a source electrode of a transistor in the differential amplification compensation module through the feedback network, energy is supplemented for the LC resonance network, and continuous oscillation of the circuit is maintained. GaAs pHEMT is adopted as transistors in the differential amplification compensation module, and low-phase noise output under the high-frequency working condition is achieved. According to the utility model, in the practical application scene of the radio frequency direct sampling technology, the signal quality and the communication performance of the system can be obviously improved, and powerful support is provided for the technical development of related fields.

Description

Technical Field

[0001] This utility model belongs to the field of oscillators, specifically relating to a VCO structure for ultra-wideband radio frequency universal configurable radio frequency micro-components. Background Technology

[0002] In today's rapidly developing communications field, RF direct sampling technology, with its superior performance and potential, has been widely used in critical systems such as high-frequency communications, radar detection, and satellite communications. This technology, by directly digitally sampling radio frequency signals, greatly simplifies system architecture and improves system integration and flexibility.

[0003] In direct radio frequency (RF) sampling systems, the voltage-controlled oscillator (VCO) is a core component, playing a crucial role in providing a stable sampling clock source or a high-quality local oscillator signal. Its performance directly determines the system's sampling accuracy, dynamic range, and anti-interference capability. Specifically, the phase noise characteristics of the VCO have a profound impact on the signal quality of the RF direct sampling system. When the VCO has excessive phase noise, the signal spectrum will exhibit significant diffusion, leading to a substantial increase in the signal's sideband energy. This not only degrades the adjacent channel leakage ratio (ACLR), affecting normal communication between channels, but also, for systems employing complex modulation methods such as high-order quadrature amplitude modulation (QAM), increases the error vector magnitude (EVM), resulting in a significant increase in the bit error rate and severely reducing the accuracy and reliability of communication. Utility Model Content

[0004] To address the aforementioned problems in the prior art, this invention provides a VCO structure for ultra-wideband RF universal configurable RF micro-components. The technical problem to be solved by this invention is achieved through the following technical solution:

[0005] This utility model embodiment provides a VCO structure for ultra-wideband RF universal configurable RF micro-components, including:

[0006] The system consists of an LC resonant network, a differential amplifier compensation module, a bias module, a filter module, a feedback network, and a matching network; among which,

[0007] The input terminal of the LC resonant network is connected to the power supply voltage VDD, the control terminal is connected to the output terminal of the filter module, and the differential output terminal is connected to the first differential input terminal of the differential amplification and compensation module.

[0008] The second input terminal of the differential amplification and compensation module is connected to the output terminal of the bias module, and the differential output terminal is connected to the input and output terminals of the feedback network.

[0009] The input terminal of the bias module is connected to the bias voltage VG, and the differential self-bias terminal is connected to the differential output terminal of the differential amplification and compensation module.

[0010] The input terminal of the filter module serves as the input terminal of the VCO structure and is connected to the tuning voltage VTUNE.

[0011] The feedback end of the feedback network is connected to the first differential input end of the differential amplification and compensation module;

[0012] The differential input of the matching network is connected to the input and output of the feedback network, and the differential output serves as the output of the VCO structure.

[0013] The beneficial effects of this utility model are:

[0014] The solution provided by this invention introduces a filtering module to suppress high-frequency noise in the tuning voltage VTUNE from entering the VCO, while preventing high-frequency signals from the VCO from leaking into the VTUNE and causing energy loss. The self-biasing submodule in the bias module introduces source negative feedback to the differential amplifier compensation module, suppressing VCO noise, stabilizing the operating point, and improving the VCO's anti-interference capability. A feedback network forms positive feedback at the source of the transistors in the differential amplifier compensation module, replenishing energy to the LC resonant network and maintaining continuous circuit oscillation. Furthermore, the transistors in the differential amplifier compensation module all use gallium arsenide-based pseudo-high electron mobility transistors (GaAs pHEMTs), achieving low phase noise output under high-frequency operating conditions. In practical applications of RF direct sampling technology such as high-frequency communication, radar, and satellite systems, this invention can significantly improve system signal quality and communication performance, providing strong support for the technological development of related fields. Attached Figure Description

[0015] Figure 1 A schematic diagram of a VCO structure for an ultra-wideband radio frequency universal configurable radio frequency micro-component provided in an embodiment of this utility model;

[0016] Figure 2 This is a schematic diagram of a VCO structure for an ultra-wideband radio frequency universal configurable radio frequency micro-component provided in an embodiment of the present invention. Detailed Implementation

[0017] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0018] This utility model embodiment provides a VCO structure for ultra-wideband RF universal configurable RF micro-components, such as... Figure 1 As shown, it may include:

[0019] The system consists of an LC resonant network, a differential amplifier compensation module, a bias module, a filter module, a feedback network, and a matching network; among which,

[0020] The input terminal of the LC resonant network is connected to the power supply voltage VDD, the control terminal is connected to the output terminal of the filter module, and the differential output terminal is connected to the first differential input terminal of the differential amplification and compensation module.

[0021] The second input terminal of the differential amplifier compensation module is connected to the output terminal of the bias module, and the differential output terminal is connected to the input and output terminals of the feedback network.

[0022] The bias module's input terminal is connected to the bias voltage VG, and the differential self-bias terminal is connected to the differential output terminal of the differential amplification and compensation module.

[0023] The input terminal of the filter module serves as the input terminal of the VCO structure, and is connected to the tuning voltage VTUNE.

[0024] The feedback end of the feedback network is connected to the first differential input end of the differential amplification and compensation module;

[0025] The differential input of the matching network is connected to the input and output of the feedback network, and the differential output serves as the output of the VCO structure.

[0026] A schematic diagram of the VCO structure provided in this embodiment of the present invention is shown below. Figure 2 As shown, for ease of understanding, the following will be combined with... Figure 2 The various modules of the VCO structure for ultra-wideband radio frequency universal configurable radio frequency micro-components provided in this embodiment of the present invention will be described separately.

[0027] LC resonant networks, such as Figure 2 As shown, it may include:

[0028] Resonant inductor LR1, resonant inductor LR2, resonant capacitor CR1, resonant capacitor CR2, Schottky diode DT1, and Schottky diode DT2; among which,

[0029] The first terminal of resonant inductor LR1 and the first terminal of resonant inductor LR2 are both connected to the power supply voltage VDD, and the second terminal of resonant inductor LR1 is connected to the first terminal of resonant capacitor CR1.

[0030] The second terminal of the resonant inductor LR2 is connected to the first terminal of the resonant capacitor CR2;

[0031] The second terminal of the resonant capacitor CR1 is connected to the cathode of the Schottky diode DT1;

[0032] The second terminal of the resonant capacitor CR2 is connected to the cathode of the Schottky diode DT2;

[0033] The anode of Schottky diode DT1 is connected to the anode of Schottky diode DT2;

[0034] The anode of the Schottky diode DT2 is grounded;

[0035] The second terminals of resonant inductor LR1 and resonant inductor LR2 serve as the differential output terminals of the LC resonant network.

[0036] The second terminals of resonant capacitors CR1 and CR2 serve as the control terminals of the LC resonant network.

[0037] During operation, resonant inductors LR1 and LR2, resonant capacitors CR1 and CR2, and Schottky diodes DT1 and DT2 work together to construct a high-frequency, high-Q resonator. Resonant capacitors CR1 and CR2, in conjunction with Schottky diodes DT1 and DT2, adjust the resonant frequency of the LC resonant network by changing the junction capacitance of DT1 and DT2 through an external tuning voltage VTUNE, thereby meeting different resonant frequency requirements. Specific resonant frequencies... The calculation formula is as follows:

[0038] ;

[0039] in, This represents the equivalent inductance of an LC resonant network. This represents the equivalent capacitance of the LC resonant network. It means approximately equal to.

[0040] In GaAs pHEMT technology, the layout of a high-frequency, high-Q resonator can utilize a wide "U-shaped" metal trace that also possesses inductive characteristics, making it equivalent to a distributed inductor. This distributed inductor has a higher Q value compared to a planar spiral inductor. The varactor device in this embodiment utilizes the characteristic of a Schottky diode's junction capacitance varying with bias voltage. This can be achieved without a specific varactor diode, significantly reducing process requirements. Furthermore, the structure of the Schottky diode is similar to that of the pHEMT, eliminating the need for an additional photomask and further reducing production costs.

[0041] Differential amplification and compensation module, such as Figure 2 As shown, it may include:

[0042] Transistor M1 and transistor M2; among which,

[0043] The source of transistor M1 and the source of transistor M2 serve as the differential output terminals of the differential amplifier compensation module; the gate of transistor M1 is connected to the gate of transistor M2, serving as the second input terminal of the differential amplifier compensation module; the drain of transistor M1 and the drain of transistor M2 serve as the first differential input terminal of the differential amplifier compensation module.

[0044] Transistors M1 and M2 are common-source differential pairs, which serve as the core amplification devices to provide signal gain. At the same time, under a specific bias, the drain-source of these common-source differential pairs exhibits negative resistance characteristics, which offsets the losses caused by the resistance and parasitic resistance of the LC resonant network, maintaining continuous oscillation and ensuring stable signal output.

[0045] Preferably, transistors M1 and M2 are gallium arsenide-based pseudomorphic high electron mobility transistors (GaAs pHEMTs).

[0046] Gallium arsenide (GaAs) materials possess unique and excellent electrical properties, including high electron mobility (approximately...). This allows electrons to move extremely fast within the transistor, enabling a rapid response to changes in the electric field and effectively reducing parasitic parameters and losses in the device. Simultaneously, the low noise characteristics of GaAs material (noise figure <1dB) allow it to exhibit extremely low phase noise levels in the millimeter-wave band.

[0047] This invention utilizes the VCO structure provided by gallium arsenide-based pseudo-high electron mobility transistors, making full use of the advantages of GaAs materials. Through careful optimization of circuit topology and device parameters, it achieves low phase noise output under high-frequency operating conditions.

[0048] The bias module may include:

[0049] Gate bias submodule and self bias submodule; wherein,

[0050] The input terminal of the gate bias submodule serves as the input terminal of the bias module, and the output terminal serves as the output terminal of the bias module.

[0051] The differential bias terminal of the self-biasing submodule serves as the differential self-biasing terminal of the biasing module.

[0052] Specifically, the gate bias submodule, such as Figure 2 As shown, it may include:

[0053] Filter inductor LF3 and filter capacitor CF2; where,

[0054] The first end of the filter inductor LF3 serves as the output of the gate bias submodule, and the second end serves as the input of the gate bias submodule.

[0055] The first terminal of the filter capacitor CF2 is connected to the second terminal of the filter inductor LF3, and the second terminal is grounded.

[0056] The gate bias submodule provides the gate voltage for the differential amplifier compensation module, stabilizing its DC operating point; at the same time, the gate bias submodule can also serve as a low-pass filter structure to eliminate high-frequency noise in the bias voltage VG and stabilize the bias voltage.

[0057] Self-biased submodules, such as Figure 2 As shown, it may include:

[0058] Resistors RS1 and RS2;

[0059] The first terminals of resistor RS1 and resistor RS2 serve as the differential bias terminals of the self-biasing submodule, while the second terminals are grounded.

[0060] The second terminal of resistor RS2 is grounded.

[0061] The self-biasing submodule introduces source negative feedback to the differential amplifier compensation module to suppress noise and further stabilize the operating point, thereby improving the anti-interference capability of the VCO structure.

[0062] Filtering modules, such as Figure 2 As shown, it may include:

[0063] Filter capacitor CF1, filter inductor LF1, and filter inductor LF2; among which,

[0064] The first terminal of the filter capacitor CF1 serves as the input terminal of the filter module, and the second terminal is grounded.

[0065] The first terminal of the filter inductor LF1 is connected to the first terminal of the filter capacitor CF1;

[0066] The first terminal of the filter inductor LF2 is connected to the first terminal of the filter capacitor CF1;

[0067] The second terminals of filter inductors LF1 and LF2 serve as the output terminals of the filter module.

[0068] The filtering module can be used as a low-pass filter structure to suppress high-frequency noise from the tuning voltage VTUNE from entering the VCO, while preventing high-frequency signals from the VCO from leaking into the tuning voltage VTUNE and causing energy loss.

[0069] Feedback network, such as Figure 2 As shown, it may include:

[0070] Capacitors CR3, CR4, CR5, and CR6; among them,

[0071] The first terminals of capacitor CR3 and capacitor CR5 serve as the feedback terminals of the feedback network, while the second terminals of capacitor CR3 and capacitor CR5 serve as the input and output terminals of the feedback network.

[0072] The first terminal of capacitor CR4 is connected to the second terminal of capacitor CR3, and the second terminal is grounded.

[0073] The first terminal of capacitor CR6 is connected to the second terminal of capacitor CR5, and the second terminal is grounded.

[0074] It is understood that in the VCO structure provided in this embodiment of the present invention, the resonant inductor LR1, resonant inductor LR2, transistor M1, transistor M2, capacitors CR3, CR4, CR5, CR6, resistor RS1, and resistor RS2 can form a Colpitts differential oscillator; the resonant voltage is divided by capacitors CR3 and CR4, forming positive feedback at the source of transistor M1, and the resonant voltage is divided by capacitors CR5 and CR6, forming positive feedback at the source of transistor M2, thus replenishing energy to the LC resonant network and maintaining the continuous oscillation of the circuit.

[0075] Matching networks, such as Figure 2 As shown, it may include:

[0076] Matching capacitors CC1 and CC2; where,

[0077] The first terminals of matching capacitor CC1 and matching capacitor CC2 serve as the differential output terminals of the matching network, and the second terminals of matching capacitor CC1 and matching capacitor CC2 serve as the differential input terminals of the matching network.

[0078] This invention solves the problems of insufficient frequency regulation and stability of traditional oscillators by optimizing the differential structure and tuning mechanism, while also being low-cost; it provides a high-performance, low-cost signal source for radio frequency circuits, and has significant practical value and promotion potential.

[0079] The working process of the VCO structure provided in this embodiment of the utility model is as follows:

[0080] Oscillation start-up stage: After the VCO is powered on, the power supply voltage VDD and the bias module establish the operating point for the differential amplifier compensation module. The LC resonant network generates an initial signal due to minor disturbances such as noise. The differential amplifier compensation module amplifies and the negative resistance compensation cancels out the loss of the LC resonant network, so as to meet the conditions that the loop gain is greater than 1 and the phase shift is equal to 306°, thus realizing oscillation start-up.

[0081] Frequency adjustment stage: By changing the tuning voltage VTUNE, the junction capacitances of Schottky diodes DT1 and DT2 in the LC resonant network change accordingly, and the equivalent capacitance of the LC resonant network changes. The resonant frequency of the VCO structure is adjusted accordingly to achieve voltage-controlled tuning.

[0082] Stable oscillation stage: The differential amplifier compensation module continuously compensates for losses with negative resistance, the bias module stabilizes the operating point, and the filter module suppresses noise, so that the VCO structure outputs a stable, low-noise high-frequency differential oscillation signal, which is transmitted to the subsequent circuit through the matching network.

[0083] This invention introduces a filtering module to suppress high-frequency noise from the tuning voltage VTUNE from entering the VCO, while preventing high-frequency signals from the VCO from leaking into the VTUNE and causing energy loss. A self-biasing submodule in the bias module introduces source negative feedback to the differential amplifier compensation module, suppressing VCO noise, stabilizing the operating point, and improving the VCO's anti-interference capability. A feedback network forms positive feedback at the source of the transistors in the differential amplifier compensation module, replenishing energy to the LC resonant network and maintaining continuous circuit oscillation. Furthermore, all transistors in the differential amplifier compensation module are GaAs pHEMTs (gallium arsenide-based pseudo-high electron mobility transistors), achieving low phase noise output under high-frequency operating conditions. In practical applications of RF direct sampling technology such as high-frequency communication, radar, and satellite systems, this invention can significantly improve system signal quality and communication performance, providing strong support for technological development in related fields.

[0084] It should be noted that, in the description of this utility model, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0085] The above description is merely a preferred embodiment of this utility model and is not intended to limit the scope of protection of this utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model are included within the scope of protection of this utility model.

Claims

1. A VCO architecture for ultra-wideband radio frequency general configurable radio frequency micro components, characterized by, The LC resonant network, the differential amplification compensation module, the biasing module, the filter module, the feedback network and the matching network are included. An input end of the LC resonant network is connected to a power supply voltage VDD, a control end is connected to an output end of the filter module, and a differential output end is connected to a first differential input end of the differential amplification compensation module. A second input end of the differential amplification compensation module is connected to an output end of the biasing module, and a differential output end is connected to an input / output end of the feedback network. An input end of the biasing module is connected to a biasing voltage VG, and a differential self-biasing end is connected to a differential output end of the differential amplification compensation module. An input end of the filter module is used as an input end of a VCO structure and is connected to a tuning voltage VTUNE. A feedback end of the feedback network is connected to the first differential input end of the differential amplification compensation module. A differential input end of the matching network is connected to the input / output end of the feedback network, and a differential output end is used as an output end of the VCO structure. The LC resonant network includes a resonant inductor LR1, a resonant inductor LR2, a resonant capacitor CR1, a resonant capacitor CR2, a Schottky diode DT1 and a Schottky diode DT2.

2. The VCO architecture for an ultra-wideband radio frequency general configurable radio frequency micro-component of claim 1, wherein, A first end of the resonant inductor LR1 and a first end of the resonant inductor LR2 are both connected to the power supply voltage VDD, and a second end of the resonant inductor LR1 is connected to a first end of the resonant capacitor CR1. A second end of the resonant inductor LR2 is connected to a first end of the resonant capacitor CR2. A second end of the resonant capacitor CR1 is connected to a cathode of the Schottky diode DT1. A second end of the resonant capacitor CR2 is connected to a cathode of the Schottky diode DT2. An anode of the Schottky diode DT1 is connected to an anode of the Schottky diode DT2. The anode of the Schottky diode DT2 is grounded. The second end of the resonant inductor LR1 and the second end of the resonant inductor LR2 are used as differential output ends of the LC resonant network. The second end of the resonant capacitor CR1 and the second end of the resonant capacitor CR2 are used as control ends of the LC resonant network. The differential amplification compensation module includes a transistor M1 and a transistor M2. The source of the transistor M1 and the source of the transistor M2 are used as differential output ends of the differential amplification compensation module, the gate of the transistor M1 and the gate of the transistor M2 are connected and used as a second input end of the differential amplification compensation module, and the drain of the transistor M1 and the drain of the transistor M2 are used as first differential input ends of the differential amplification compensation module.

3. The VCO architecture for an ultra-wideband radio frequency general configurable radio frequency micro-component of claim 1, wherein, The transistor M1 and the transistor M2 are GaAs pHEMTs. The biasing module includes a gate biasing submodule and a self-biasing submodule. The input end of the gate biasing submodule is used as an input end of the biasing module, and the output end of the gate biasing submodule is used as an output end of the biasing module.

4. The VCO architecture for an ultra-wideband radio frequency general configurable radio frequency micro-component of claim 3, wherein, The differential biasing end of the self-biasing submodule is used as a differential self-biasing end of the biasing module.

5. The VCO architecture for an ultra-wideband radio frequency general configurable radio frequency micro-component of claim 1, wherein, The gate biasing submodule includes a filter inductor LF3 and a filter capacitor CF2. The filter inductor LF3 is connected to the filter capacitor CF2. ​ ​ 6. The VCO architecture for an ultra-wideband radio frequency general configurable radio frequency micro-component of claim 5, wherein, ​ ​ A first end of the filter inductor LF3 is an output end of the gate biasing sub-module, and a second end is an input end of the gate biasing sub-module. A first end of the filter capacitor CF2 is connected with the second end of the filter inductor LF3, and a second end is grounded.

7. The VCO architecture for an ultra-wideband radio frequency general configurable radio frequency micro-component of claim 5, wherein, The self-biasing sub-module comprises: The resistors RS1 and RS2; A first end of the resistor RS1 and a first end of the resistor RS2 are differential biasing ends of the self-biasing sub-module, and second ends are grounded. A second end of the resistor RS2 is grounded.

8. The VCO architecture for an ultra-wideband radio frequency general configurable radio frequency micro-component of claim 1, wherein, The filter module comprises: The filter capacitor CF1, the filter inductor LF1 and the filter inductor LF2; wherein A first end of the filter capacitor CF1 is an input end of the filter module, and a second end is grounded. A first end of the filter inductor LF1 is connected with the first end of the filter capacitor CF1. A first end of the filter inductor LF2 is connected with the first end of the filter capacitor CF1. Second ends of the filter inductor LF1 and the filter inductor LF2 are output ends of the filter module.

9. The VCO architecture for an ultra- wideband radio frequency general configurable radio frequency microcellular component of claim 1, wherein, The feedback network comprises: The capacitors CR3, CR4, CR5 and CR6; wherein First ends of the capacitors CR3 and CR5 are feedback ends of the feedback network, and second ends of the capacitors CR3 and CR5 are input and output ends of the feedback network. A first end of the capacitor CR4 is connected with the second end of the capacitor CR3, and a second end is grounded. A first end of the capacitor CR6 is connected with the second end of the capacitor CR5, and a second end is grounded.

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