Magnetron sputtering rotating target automatic polishing system and vacuum coating equipment
By designing an automatic grinding system for magnetron sputtering rotating targets, the system can detect the status of the rotating targets in real time and generate control commands for automatic grinding and cleaning. This solves the problem of not being able to confirm the status of the rotating targets in a timely manner in existing technologies, thereby improving product quality and yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2026-03-31
AI Technical Summary
Existing technologies cannot promptly confirm the status of rotating targets, nor can they quickly and effectively address target nodules and target poisoning, resulting in low product quality and yield.
An automatic grinding system for a magnetron sputtering rotating target was designed, including a rotating mechanism, a base, first and second cleaning components, and multiple detection components. By detecting the distance of the rotating target in real time, control commands are generated to perform automatic grinding and cleaning, avoiding insufficient target material and nodule formation.
It enables real-time monitoring of rotating targets, prevents target nodule formation, reduces maintenance time and labor costs, and ensures product quality and yield.
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Figure CN224059494U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to target material polishing technical field, concretely relates to a magnetron sputtering rotating target automatic polishing system and vacuum coating equipment. BACKGROUND
[0002] In the development history of solar cells, perovskite solar cells are favored by many capitals at home and abroad because of their adjustable optical band gap, high photoelectric conversion efficiency and long carrier diffusion length. The efficiency and performance of single-junction perovskite cells and stacked perovskite cells are also constantly breaking records. In perovskite, a magnetron sputtering device is needed for coating, and in magnetron sputtering coating, the rotating target may cause target nodulation and target poisoning due to high temperature in the sputtering section for a long time, the presence of impurity particles, and unreasonable process parameters, thereby affecting the quality of the film layer. Moreover, in the related art, the state of the rotating target cannot be confirmed in a timely manner, and the target nodulation and target poisoning cannot be effectively treated quickly, thereby resulting in low product quality and product yield. SUMMARY
[0003] Therefore, the utility model provides a magnetron sputtering rotating target automatic polishing system and vacuum coating equipment to solve the technical problem that the state of the rotating target cannot be confirmed in a timely manner and the rotating target cannot be effectively treated quickly.
[0004] The utility model provides a magnetron sputtering rotating target automatic polishing system, which comprises:
[0005] A rotating mechanism is used to fix the end of the rotating target and rotate the rotating target around the shaft.
[0006] A base is arranged on one side of the rotating target.
[0007] A first cleaning assembly is fixedly installed on the base and used to polish the rotating target.
[0008] A second cleaning assembly is fixedly installed on the base and used to clean the polished rotating target.
[0009] A plurality of first detection assemblies are fixedly installed on the base and arranged along the rotating target in an axial direction at intervals.
[0010] Beneficial effects: The end of the rotating target is fixed on the rotating mechanism, and the rotating target is controlled to rotate around the shaft by the rotating mechanism to realize the rotation of the rotating target. By arranging a base on one side of the rotating target, the first cleaning assembly, the second cleaning assembly and the first detection assembly are fixedly installed on the base, and a plurality of first detection assemblies are arranged at intervals along the axial direction of the rotating target, so that the first detection assembly can effectively monitor the state of the surface of the rotating target. The distance from the first detection assembly to the rotating target can be detected in real time by the first detection assembly; the use amount and the remaining amount of the target material on the rotating target can be reflected according to the change of the distance, so that the user can quickly judge the sustainable state of the target material even without experience of the target material use period, and the risk of production stoppage caused by insufficient target material in the production process can be effectively avoided.
[0011] Meanwhile, the change of the distance can also find that the target material is nodular and the material consumption is uneven due to the regional sputtering uniformity of the whole target material. Moreover, after finding that the target material is nodular or poisoned, corresponding control instructions can be generated according to the change of the distance; in the vacuum chamber, the controller controls the first cleaning assembly to automatically polish the rotating target according to the control instructions; and then controls the second cleaning assembly to clean the rotating target polished by the first cleaning assembly. Thus, the polishing of opening the cavity for maintenance is not needed, and the maintenance time cost and labor cost are effectively reduced. Since the initial stage of target material nodulation has little effect on the process effect, but the actual target material has already changed slightly, the abnormality of the target material can be monitored in real time, so that the target material nodulation can be effectively prevented, and the product quality and yield can be ensured.
[0012] In an optional embodiment, the first cleaning assembly comprises a first linear displacement mechanism and a polishing element arranged on the first linear displacement mechanism, and the first linear displacement mechanism drives the polishing element to move away from or close to the outer peripheral wall of the rotating target.
[0013] In an optional embodiment, the polishing element comprises a mounting base, a polishing piece is arranged on one side of the mounting base close to the rotating target, and a dust adsorption mechanism is arranged on the mounting base corresponding to the polishing piece.
[0014] In an optional embodiment, the dust adsorption mechanism comprises a dust collector and an air pipe, the air inlet end of the air pipe is close to the polishing piece, and the air outlet end of the air pipe is communicated with the dust collector.
[0015] In an optional embodiment, a plurality of air holes are arranged on the mounting base, the air holes are distributed along the length direction of the rotating target, one end of the air hole faces the rotating target, and the other end is communicated with the air inlet end of the air pipe.
[0016] In an alternative embodiment, a plurality of said air holes are arranged close to and distributed around the outer periphery of said polishing member.
[0017] In an alternative embodiment, a groove is formed on the side of said mounting base facing said rotating target, said polishing member is detachably mounted in said groove, and the polishing surface of said polishing member protrudes and is close to the end surface of said mounting base facing said rotating target.
[0018] In an alternative embodiment, said second cleaning assembly comprises a second linear displacement mechanism and a cleaning member arranged on said second linear displacement mechanism, said second linear displacement mechanism drives said cleaning member to move away from or close to the outer peripheral wall of said rotating target, and said second cleaning assembly is arranged behind said first cleaning assembly in the rotation direction of said rotating target.
[0019] In an alternative embodiment, further comprising:
[0020] A plasma cleaning assembly for cleaning the surface of said rotating target after being cleaned by said second cleaning assembly.
[0021] A roughness detection assembly for detecting the surface roughness of said rotating target after being cleaned by said plasma cleaning assembly.
[0022] In another aspect, the utility model also provides a vacuum coating equipment, comprising:
[0023] A housing:
[0024] The magnetron sputtering rotating target automatic polishing system as described above is installed in said housing. BRIEF DESCRIPTION OF DRAWINGS
[0025] In order to more clearly illustrate the specific embodiments of the utility model or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the utility model, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.
[0026] Figure 1 It is a structural schematic diagram of a magnetron sputtering rotating target automatic polishing system of an embodiment of the utility model;
[0027] Figure 2 It is a structural schematic diagram of a first cleaning device in a magnetron sputtering rotating target automatic polishing system of an embodiment of the utility model;
[0028] Figure 3 It is a structural schematic diagram of a second cleaning device in a magnetron sputtering rotating target automatic polishing system of an embodiment of the utility model; Figure 2A partial enlarged schematic view of the first cleaning device shown;
[0029] Figure 4 For Figure 3 A right view of the polishing element shown;
[0030] Figure 5 For the structure diagram of the second cleaning device in the magnetic control sputtering rotary target automatic polishing system of the embodiment of the utility model;
[0031] Figure 6 For the structure diagram of the collecting box in the magnetic control sputtering rotary target automatic polishing system of the embodiment of the utility model.
[0032] BRIEF DESCRIPTION OF DRAWINGS
[0033] 10, housing; 100, rotary target; 101, rotating mechanism; 200, base; 210, first cleaning assembly; 211, first base; 212, first guide rail; 213, first sliding block; 214, polishing element; 2141, rod body; 2142, mounting base; 2143, air hole; 2144, polishing piece; 2145, air pipe; 2146, dust collector; 2147, groove; 220, second cleaning assembly; 221, second base; 222, second guide rail; 223, second sliding block; 224, cleaning piece; 300, first detection assembly; 400, plasma cleaning assembly; 500, roughness detection assembly; 600, collecting box; 700, substrate; 800, transmission wheel. DETAILED DESCRIPTION
[0034] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be described clearly and completely below in combination with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the utility model.
[0035] According to the embodiments of the utility model, on the one hand, in combination with the drawings, Figure 1The utility model provides a kind of magnetron sputtering rotating target automatic polishing system, comprising: rotating mechanism 101, for fixing the end of rotating target 100 and rotating rotating target 100 around shaft;Base 200, is arranged in one side of rotating target 100;First cleaning assembly 210, fixedly installed on base 200, for polishing rotating target 100;Second cleaning assembly 220, fixedly installed on base 200, for cleaning after polishing rotating target 100;Multiple first detection assembly 300, fixedly installed on base 200 and along rotating target 100 axial interval arrangement, for detecting the distance of first detection assembly 300 to rotating target 100.
[0036] In the embodiment, the end of rotating target 100 is fixed on rotating mechanism 101, and rotating target 100 is controlled to rotate around shaft by rotating mechanism 101 to realize the rotation of rotating target 100. A base 200 is arranged on one side of rotating target 100, and first cleaning assembly 210, second cleaning assembly 220 and first detection assembly 300 are fixedly installed on base 200. Multiple first detection assembly 300 are arranged along the axis of rotating target 100 to ensure that first detection assembly 300 can effectively monitor the state of the surface of rotating target 100. The distance from first detection assembly 300 to rotating target 100 can be detected in real time by first detection assembly 300. According to the change of the distance, the use amount and the remaining amount of target material on rotating target 100 can be reflected. Even if the user has no experience of target material use cycle, the sustainable state of target material can be quickly judged, and the risk of production stoppage caused by insufficient target material in the production process can be effectively avoided. For example, after setting the initial position of the target material, as the target material is consumed, the distance from the target material to the first detection device also increases. When the distance from first detection assembly 300 to rotating target 100 is less than the set distance, it can be determined that the target material is insufficient, and the user can be reminded that the target material is insufficient.
[0037] Since rotating target 100 is in a rotating state during the process, first detection assembly 300 detects the distance from it to rotating target 100 in real time. Under normal circumstances, the distance increases slowly as the target material is consumed. However, when the distance decreases, i.e., the thickness of the target material increases, it indicates that there is target nodulation at that position. Moreover, the height of the nodulation can be calculated from the recorded distance value to determine the severity of the nodulation. The user can determine whether the process needs to be ended for polishing operation according to the severity of the nodulation and the distribution of the nodulation detected by first detection assembly 300, without waiting for the quality of the process film layer to change to know that the target material has nodulation.
[0038] After discovering that the target material is nodulated or poisoned, the user can generate corresponding control instructions according to the change in distance; in the vacuum chamber, the controller controls the first cleaning assembly 210 to automatically polish the rotating target 100 according to the control instructions; and then controls the second cleaning assembly 220 to clean the rotating target 100 polished by the first cleaning assembly 210. Thus, it is not necessary to polish in the open cavity maintenance, effectively reducing the maintenance time cost and labor cost. Since the initial stage of target material nodulation has little effect on the process effect, but the actual target material has already changed slightly, by monitoring whether the target material is abnormal in real time, the target material nodulation can be effectively prevented, thereby ensuring product quality and product yield.
[0039] In one embodiment, the interval distance between two adjacent first detection elements is 5-10 cm. Specifically, it can be 5 cm, 6 cm, 7 cm, 8 cm, 9 cm, 10 cm, etc., and can be selected according to actual use requirements, without specific limitation.
[0040] In one implementation, the first detection assembly 300 includes a photoelectric sensor, which is arranged on the base 200 and arranged along the axial direction of the rotating target 100, to effectively monitor the surface of the rotating target 100. It can be understood that the first detection assembly 300 is not limited to being installed on the base 200, but can also be arranged on the housing 10 of the vacuum coating device, to ensure that the position of the first detection assembly 300 is fixed and the distance from the first detection assembly 300 to the rotating target 100 can be detected.
[0041] In one implementation, the material of the rotating target 100 can be zinc oxide, indium tin oxide, nickel oxide, titanium oxide, etc., and the rotating target 100 can rotate at a fixed speed to perform material sputtering.
[0042] As shown in Figure 2 In one embodiment, the first cleaning assembly 210 includes a first linear displacement mechanism and a polishing element 214 arranged on the first linear displacement mechanism, and the first linear displacement mechanism drives the polishing element 214 to move away from or close to the outer peripheral wall of the rotating target 100.
[0043] In the embodiment, the first linear displacement mechanism is composed of a first base 211, a first guide rail 212 and a first sliding block 213. The first base 211 is fixedly connected with the base 200, so as to fix the first cleaning assembly 210 on the base 200; the first guide rail 212 is installed on the first base 211, and the first sliding block 213 is slidingly arranged on the first guide rail 212, and the movement path of the first sliding block 213 can be determined through the first guide rail 212. The polishing element 214 is detachably installed on the first sliding block 213 and reciprocally moves along the first guide rail 212 under the driving of the first sliding block 213, so that the polishing element 214 is away from or close to the outer peripheral wall of the polishing rotating target 100, and when the polishing element 214 is worn, the polishing element 214 can be quickly replaced to improve the work efficiency. When the first cleaning assembly 210 receives a control instruction, the first sliding block 213 can be driven to move on the first guide rail 212 by the controller, so as to drive the polishing element 214 to move towards the rotating target 100, so that the polishing element 214 automatically polishes the rotating target 100.
[0044] As shown in Figure 3 , Figure 4 In one embodiment, the polishing element 214 includes a mounting base 2142, and the mounting base 2142 is provided with a polishing piece 2144 close to one side of the rotating target 100, and a dust adsorption mechanism corresponding to the polishing piece 2144 is arranged on the mounting base 2142.
[0045] In the embodiment, the mounting base 2142 provides mounting positions for the polishing piece 2144 and the dust adsorption mechanism, so as to ensure that the polishing piece 2144 and the dust adsorption mechanism can stably cooperate. The mounting base 2142 can be installed on one end of a rod body 2141 close to the rotating target 100, and the other end of the rod body 2141 is fixedly connected with the first sliding block 213. The mounting base 2142 is further provided with the polishing piece 2144 close to one side of the rotating target 100, and the polishing operation on the rotating target 100 is realized through the polishing piece 2144. Meanwhile, the dust adsorption mechanism corresponding to the polishing piece 2144 is arranged on the mounting base 2142. When the polishing piece 2144 polishes the rotating target 100, dust will be generated, and at this time, the dust adsorption mechanism will work synchronously, and the dust generated by polishing can be timely adsorbed by the adsorption function of the dust adsorption mechanism, so as to avoid the target material from being nubbly due to the dust or small nubbly blocks after polishing.
[0046] In one implementation, the material of the polishing piece 2144 can be alumina, zirconia, silicon carbide, beryllium oxide and chromium oxide, so as to ensure that the polishing piece 2144 has high hardness, good insulation and high temperature resistance.
[0047] In one embodiment, the dust adsorption mechanism comprises a dust collector 2146 and an air pipe 2145, the air inlet end of the air pipe 2145 is close to the polishing member 2144, and the air outlet end of the air pipe 2145 is communicated with the dust collector 2146.
[0048] In the embodiment, the dust collector 2146 is used to collect the dust or small bumps generated after the polishing of the rotating target 100. The air inlet end of the air pipe 2145 is close to the polishing member 2144, so that the dust or small bumps generated in the polishing process can be captured to the maximum extent. The air outlet end of the air pipe 2145 is communicated with the dust collector 2146, so that the dust or small bumps sucked into the air pipe 2145 can flow along the air pipe 2145 to the dust collector 2146, thereby avoiding the bumping of the target material due to the dust or small bumps after polishing.
[0049] In one embodiment, a plurality of air holes 2143 are arranged on the mounting base 2142, the plurality of air holes 2143 are distributed along the length direction of the rotating target 100, one end of the air hole 2143 faces the rotating target 100, and the other end is communicated with the air inlet end of the air pipe 2145.
[0050] In the embodiment, a plurality of air holes 2143 are arranged on the mounting base 2142, and the plurality of air holes 2143 are distributed along the length direction of the rotating target 100, so that one end of the air hole 2143 faces the rotating target 100. When the first cleaning assembly 210 cleans the surface of the rotating target 100, the dust or small bumps generated in the polishing process can be smoothly sucked into the air hole 2143. The other end of the air hole 2143 is communicated with the air inlet end of the air pipe 2145, so that the dust or small bumps can smoothly enter the air pipe 2145 through the air hole 2143. When the first cleaning assembly 210 performs the polishing work, the dust collector 2146 starts to work at the same time, and the dust or small bumps generated in the polishing of the rotating target 100 are sucked into the air hole 2143 and then sucked into the dust collector 2146 through the air pipe 2145, thereby avoiding the bumping of the target material due to the dust or small bumps after polishing.
[0051] In one embodiment, the material of the air pipe 2145 can be 304 stainless steel, 310S stainless steel, etc., so that the air pipe 2145 can be used in a vacuum environment and has the advantages of high temperature resistance and wear resistance.
[0052] In one embodiment, the plurality of air holes 2143 are close to and distributed around the polishing member 2144.
[0053] In the embodiment, the polishing surface is as close to the air holes 2143 as possible by arranging the air holes 2143 close to and distributed around the outer periphery of the polishing piece 2144, and each side of the polishing piece 2144 can be affected by the air holes 2143, so that the dust or small bumps generated by the polishing piece 2144 during the polishing operation can be more efficiently sucked into the air holes 2143 and then into the air pipe 2145, and then be absorbed by the dust collector 2146, thereby improving the cleaning efficiency of the dust or small bumps.
[0054] In one of the embodiments, the air holes 2143 are arranged at intervals on the mounting base 2142, the diameter of the air holes 2143 is 3-8 mm, and the distance between two adjacent air holes 2143 is 50-100 mm.
[0055] In the embodiment, the air holes 2143 are arranged at intervals on the mounting base 2142 to ensure that the dust or small bumps generated by polishing can be fully sucked in. The diameter of the air holes 2143 can be 3 mm, 5 mm, 8 mm, etc., which can be selected according to actual use requirements. By setting a reasonable hole size, the dust or small bumps generated by polishing can be smoothly sucked into the dust collector 2146. The distance between two adjacent air holes 2143 can be 50 mm, 70 mm, 90 mm, 100 mm, etc., which can be selected according to actual use requirements. By setting a reasonable air hole 2143 spacing, it can be ensured that the dust or small bumps generated by polishing can be fully sucked in.
[0056] In one of the embodiments, the mounting base 2142 is provided with a groove 2147 on the side facing the rotating target 100, the polishing piece 2144 is detachably mounted in the groove 2147, and the polishing surface of the polishing piece 2144 protrudes and is close to the end surface of the mounting base 2142 on the side facing the rotating target 100.
[0057] In this embodiment, the mounting base 2142 has a groove 2147 on the side facing the rotating target 100, with the opening of the groove 2147 facing the rotating target 100. Furthermore, along the length of the groove 2147, mounting slots are provided at both ends of the groove 2147, allowing the grinding component 2144 to be detachably mounted in the groove 2147 via the mounting slots. The grinding component 2144 can be quickly installed into the groove 2147 through the mounting slots, and the grinding component 2144 is fixed within the groove 2147. Moreover, the grinding surface of the grinding component 2144 protrudes and is close to the end face of the mounting base 2142 facing the rotating target 100, allowing the grinding surface of the grinding component 2144 to contact the surface of the rotating target 100, thereby grinding the target surface. Furthermore, if the polishing part 2144 becomes worn, it can be quickly removed from the groove 2147 and reinstalled, thus improving the replacement efficiency of the polishing part 2144.
[0058] like Figure 5 As shown, in one embodiment, the second cleaning component 220 includes a second linear displacement mechanism and a cleaning component 224 disposed on the second linear displacement mechanism. The second linear displacement mechanism drives the cleaning component 224 away from or close to the outer peripheral wall of the rotating target 100. In the rotation direction of the rotating target 100, the second cleaning component 220 is disposed behind the first cleaning component 210.
[0059] In this embodiment, the second linear displacement mechanism consists of a second base 221, a second guide rail 222, and a second slider 223. The second base 221 is fixedly connected to the base 200 to facilitate the fixed mounting of the second cleaning component 220 on the base 200. The second guide rail 222 is mounted on the second base 221, and the second slider 223 is slidably mounted on the second guide rail 222. The movement path of the second slider 223 can be determined by the second guide rail 222. The cleaning component 224 is detachably mounted on the second slider 223 and reciprocates along the second guide rail 222 under the drive of the second slider 223. This allows the cleaning component 224 to move away from or close to the outer peripheral wall of the cleaning rotating target 100. Furthermore, when the cleaning component 224 is worn out, it can be quickly replaced to improve work efficiency.
[0060] Furthermore, in the rotation direction of the rotating target 100, the second cleaning component 220 is positioned behind the first cleaning component 210, so that the rotating target 100 is first cleaned by the first cleaning component 210, and then further cleaned by the second cleaning component 220. For example, when the first cleaning component 210 polishes the surface of the rotating target 100, some powder is generated. At this time, the controller controls the second cleaning component 220 to automatically clean the surface of the rotating target 100 again, which can effectively remove the generated powder, ensure the cleanliness of the target surface, and avoid target nodules caused by dust after polishing.
[0061] Specifically, after the first cleaning component 210 completes its polishing process, a control command is generated. Upon receiving this command, the second cleaning component 220, via a controller, drives the second slider 223 to move on the second guide rail 222, thereby driving the cleaning component 224 to move towards the rotating target 100, thus cleaning the powder off the surface of the rotating target 100. During the polishing process of the first cleaning component 210, the second cleaning component 220 can also be controlled simultaneously to clean the powder off the surface of the rotating target 100. The specific control method for the first and second cleaning components 210 can be selected according to actual needs.
[0062] In one implementation, the front end of the cleaning component 224 is semi-circular, allowing it to better conform to the target surface, thus providing a good cleaning effect and minimizing damage to itself and the target surface when cleaning the rotating target 100. The cleaning component 224 can be made of materials such as silicone rubber, polyurethane rubber, or ethylene-vinyl acetate copolymer. This gives the cleaning component 224 high wear resistance, high elasticity, and high temperature resistance, making it suitable for cleaning target surfaces inside a vacuum chamber.
[0063] like Figure 1 , Figure 6 As shown, in one embodiment, it further includes: a plasma cleaning assembly 400 for cleaning the surface of the rotating target 100 after cleaning by the second cleaning assembly 220; and a roughness detection assembly 500 for detecting the surface roughness of the rotating target 100 after cleaning by the plasma cleaning assembly 400.
[0064] In the embodiment, the plasma cleaning assembly 400 and the roughness detection assembly 500 are arranged in the housing 10 of the vacuum coating device, and the plasma cleaning assembly 400 and the roughness detection assembly 500 are electrically connected with the controller. After the second cleaning assembly 220 cleans the surface of the rotating target 100, the plasma cleaning assembly 400 uses the chemical reaction of active plasma and repeated physical bombardment to change the volatile residue, impurities, waste dust and oxides on the surface of the target material into ions or gaseous substances, and further discharges the ions or gaseous substances from the cavity under the vacuum extraction.
[0065] The roughness detection assembly 500 will detect the roughness of the target material after polishing and cleaning. If the roughness of the surface of the target material meets the use requirement of the target material, the first cleaning assembly 210 and the second cleaning assembly 220 return to the initial position, at this time, the target material can be normally processed; if the roughness of the surface of the target material does not meet the use requirement of the target material, the first cleaning assembly 210, the second cleaning assembly 220 and the plasma cleaning assembly 400 continue to work until the roughness of the surface of the target material meets the process requirement.
[0066] In one of the embodiments, a collection box 600 is further included, which is arranged directly below the rotating target 100, and the orthographic projection of the rotating target 100 on the collection box 600 is within the range of the box body of the collection box 600.
[0067] In the embodiment, the collection box 600 is arranged in the housing 10 of the vacuum coating device. By arranging the collection box 600 directly below the rotating target 100 and making the orthographic projection of the rotating target 100 on the collection box 600 within the range of the box body of the collection box 600, it is ensured that the collection box 600 can fully collect the material residues or powders which are additionally dropped during polishing, wiping or process production of the rotating target 100.
[0068] In one implementation manner, the thickness of the collection box 600 is 3mm-10mm, and can be 3mm, 5mm, 7mm or 10mm, etc. The material of the collection box 600 can be 304 stainless steel or 316 stainless steel, so as to ensure the strength of the collection box 600 and prevent the collection box 600 from being deformed due to heat.
[0069] On the other hand, the utility model also provides a vacuum coating device, which comprises: a housing 10: a magnetron sputtering rotating target automatic polishing system, the magnetron sputtering rotating target automatic polishing system is installed in the housing 10.
[0070] In the embodiment, the housing 10 can provide a vacuum cavity for the magnetron sputtering rotating target automatic polishing system, when the vacuum coating device is in an idle state, the inside of the cavity is in a high vacuum state, and the vacuum degree is 5x10 -4Pa, the vacuum degree is kept at 0.1Pa-1Pa after the gas is inputted when working. Inside the shell 10, transmission wheels 800 for transmitting the substrate 700 are arranged, the transmission wheels 800 are distributed on both sides of the rotating target 100, so as to avoid that the material powder generated by polishing falls on the transmission wheels 800, thereby causing adverse effects on the transmission of the substrate 700. The height of the collecting box 600 is lower than the height of the transmission wheels 800, so as to avoid that the collecting box 600 interferes with the transmission wheels 800.
[0071] Although the embodiments of the present application are described in conjunction with the drawings, various modifications and changes can be made by those skilled in the art without departing from the spirit and scope of the present application, and such modifications and changes fall within the scope defined by the appended claims.
Claims
1. A magnetron sputtering rotary target automatic polishing system, characterized in that, The utility model relates to a rotary target cleaning device, comprising: a rotating mechanism (101) for fixing the end of a rotating target (100) and rotating the rotating target (100) around an axis; a base (200) arranged on one side of the rotating target (100); a first cleaning assembly (210) fixedly installed on the base (200) and used for polishing the rotating target (100); a second cleaning assembly (220) fixedly installed on the base (200) and used for cleaning the polished rotating target (100); a plurality of first detection assemblies (300) fixedly installed on the base (200) and arranged along the rotating target (100) in an axial direction and used for detecting the distance from the first detection assemblies (300) to the rotating target (100).
2. The magnetron sputtering rotary target automatic polishing system according to claim 1, wherein, The first cleaning assembly (210) comprises a first linear displacement mechanism and a polishing element (214) arranged on the first linear displacement mechanism, and the first linear displacement mechanism drives the polishing element (214) to move away from or close to the outer circumferential wall of the rotating target (100) for polishing.
3. The magnetron sputtering rotary target automatic polishing system according to claim 2, wherein, The polishing element (214) comprises a mounting base (2142), and a polishing piece (2144) is arranged on one side of the mounting base (2142) close to the rotating target (100), and a dust adsorption mechanism is arranged on the mounting base (2142) corresponding to the polishing piece (2144).
4. The magnetron sputtering rotary target automatic polishing system according to claim 3, characterized in that, The dust adsorption mechanism comprises a dust collector (2146) and an air pipe (2145), the air inlet end of the air pipe (2145) is close to the polishing piece (2144), and the air outlet end of the air pipe (2145) is communicated with the dust collector (2146).
5. The magnetron sputtering rotary target automatic polishing system according to claim 4, wherein, A plurality of air holes (2143) are formed in the mounting base (2142) and are distributed along the length direction of the rotating target (100), one end of each air hole (2143) faces the rotating target (100), and the other end is communicated with the air inlet end of the air pipe (2145).
6. The magnetron sputtering rotary target automatic polishing system of claim 5, wherein, The plurality of air holes (2143) are close to and distributed around the polishing piece (2144).
7. The magnetron sputtering rotary target automatic polishing system of claim 3, wherein, One side of the mounting base (2142) facing the rotating target (100) is provided with a groove (2147), the polishing piece (2144) is detachably installed in the groove (2147), and the polishing surface of the polishing piece (2144) protrudes and is close to the end surface of the mounting base (2142) facing the rotating target (100).
8. The magnetron sputtering rotary target automatic polishing system of claim 1, wherein, The second cleaning assembly (220) comprises a second linear displacement mechanism and a cleaning element (224) arranged on the second linear displacement mechanism, the second linear displacement mechanism drives the cleaning element (224) to move away from or close to the outer circumferential wall of the rotating target (100) for cleaning, and in the rotating direction of the rotating target (100), the second cleaning assembly (220) is arranged behind the first cleaning assembly (210).
9. The magnetron sputtering rotary target automatic polishing system of claim 1, wherein, Further comprising: a plasma cleaning assembly (400) for cleaning the surface of the rotating target (100) cleaned by the second cleaning assembly (220). A roughness detection assembly (500) is used to detect the surface roughness of the rotating target (100) after the plasma cleaning assembly (400) finishes cleaning.
10. A vacuum coating apparatus, characterized by, Comprising: A housing (10): The magnetron sputtering rotating target (100) automatic polishing system of any one of claims 1-9, is installed in the housing (10).