Safety protection system for semiconductor device test

Abstract

The utility model relates to the technical field of semiconductor testing, solves the technical problems that an over-current protection circuit cannot be automatically controlled and a plurality of sensors are lacked for cooperative detection in the prior art, and particularly relates to a safety protection system for testing a semiconductor device. The safety protection system comprises a micro-processing module, a test instrument and a power supply module for providing power supply current, and further comprises an overcurrent protection circuit, a temperature measurement circuit and an overvoltage protection circuit which are used for protecting the test instrument, the over-current protection circuit is composed of a current-limiting resistor R10, an operational amplifier P1, an operational amplifier P2, a current-limiting resistor R13, a triode Q1, a divider resistor R14, a triode Q2 and a relay, the over-current protection circuit can detect and protect the current of a detection instrument, and through the internal self-locking circuit, external intervention is reduced, the safety of the circuit is improved, and the reliability of the circuit is improved. The operation is simple and the stability is high.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor testing, especially relates to a safety protection system for semiconductor device testing. BACKGROUND

[0002] Semiconductor device testing refers to various tests such as function testing, parameter testing, reliability testing, etc. on semiconductor products such as chips and transistors during the manufacturing process. Safety protection system refers to the protection system taken to protect the safety of operators and equipment when testing semiconductors, such as preventing electrostatic discharge, electromagnetic interference, or safety equipment handling high temperature, high pressure, etc. The prior art is prone to trigger current interruption if the current size exceeds the threshold value during semiconductor testing. The prior art generally uses a conventional overcurrent protection module for instrument protection. However, the existing overcurrent protection cannot achieve automatic control of cutting off and closing, and cannot cooperate with other sensors for multiple monitoring of the test instrument during operation, resulting in low safety protection. SUMMARY

[0003] To overcome the shortcomings of the prior art, the utility model provides a safety protection system for semiconductor device testing, which solves the technical problems of the prior art that cannot automatically control the overcurrent protection circuit and lack multiple sensor cooperation detection, and achieves remote automatic control of the overcurrent protection circuit and comprehensive monitoring of the test instrument by multiple sensors, improving the safety performance of the instrument.

[0004] To solve the above technical problems, the utility model provides the following technical scheme: a safety protection system for semiconductor device testing, comprising a micro-processing module, a test instrument and a power module for providing a power current, the safety protection system further comprises an overcurrent protection circuit, a temperature measurement circuit and an overvoltage protection circuit for protecting the test instrument.

[0005] Further, the overcurrent protection circuit is composed of a current limiting resistor R10, an operational amplifier P1, an operational amplifier P2, a current limiting resistor R13, a transistor Q1, a voltage dividing resistor R14, a transistor Q2 and a relay. The instrument current is connected to the input port of the operational amplifier P1 through the current limiting resistor R10. The output port of the operational amplifier P1 is connected to the input port of the operational amplifier P2. The output port of the operational amplifier P2 is connected to the base of the transistor Q1 through the current limiting resistor R13. The emitter of the transistor Q1 is connected to one end of the relay. The collector of the transistor Q1 is connected to the base of the transistor Q2 through the voltage dividing resistor R14. The collector of the transistor Q2 is connected to the other end of the relay. The power current is connected to the test instrument through the switch of the relay.

[0006] Further, the temperature measuring circuit is composed of an external power supply, a current limiting resistor R5, a temperature measuring chip and a current limiting resistor R6, the external power supply is connected to the VCC interface of the temperature measuring chip through the current limiting resistor R5, and the IO interface of the temperature measuring chip outputs a temperature signal to the micro-processing module through the current limiting resistor R6.

[0007] Further, the overvoltage protection circuit is composed of a current limiting resistor R7, a current limiting resistor R8, a triode Q3 and a PMOS tube Q4, the output voltage of the micro-processing module is connected to the base of the triode Q3 through the current limiting resistor R7 and the current limiting resistor R8, the collector of the triode Q3 is connected to the gate of the PMOS tube Q4, and the drain of the PMOS tube Q4 outputs a protection voltage to a testing instrument.

[0008] Further, the micro-processing module has a micro-processing chip, current limiting resistors R3, R4, R15 and R16, the temperature signal is connected to the R232 interface of the micro-processing chip through the current limiting resistor R3, the power supply current is connected to the DCR# interface of the micro-processing chip through the current limiting resistor R15, the RXD interface of the micro-processing chip outputs an instrument current to the overcurrent protection circuit through the current limiting resistor R16, and the V3 interface of the micro-processing chip outputs a detection voltage to the overvoltage protection circuit through the current limiting resistor R4.

[0009] Further, the power supply module is composed of an external power supply, a transformer, a bridge rectifier, a filter capacitor C1, a voltage dividing resistor R2 and a current limiting resistor R1, the external power supply provides a power supply current to the outside through the transformer, the a interface of the bridge rectifier and the current limiting resistor R1, the b interface of the bridge rectifier provides a power supply current to the outside through the voltage dividing resistor R2, and the bridge rectifier and the filter capacitor C1 are connected in parallel.

[0010] Further, the micro-processing chip is of the STM32F4 type, and the temperature measuring chip is of the DHT11B type.

[0011] By means of the above technical scheme, the utility model provides a safety protection system for semiconductor device testing, and at least has the following beneficial effects:

[0012] 1、 the current detection part of the overcurrent protection circuit can detect and protect the current of the detection instrument, the internal self-locking circuit is used for automatically controlling and cutting off the instrument current after overcurrent, after triggering once, the self-locking circuit can automatically keep, until triggering again, the self-locking circuit can be unlocked and restored to the initial state, this control method reduces external intervention, improves the safety of the circuit, and is simple in operation and high in stability.

[0013] 2, the utility model discloses a temperature measuring circuit and overvoltage protection circuit's cooperation and coordination can carry out temperature and voltage real -time detection to testing instrument and semiconductor, and cooperate overcurrent protection circuit carries out multiple detection function, ensures the security of detection process, can guarantee the use test safety of semiconductor also can promote the fluency of test, avoids the accident to occur. BRIEF DESCRIPTION OF DRAWINGS

[0014] The drawings described herein are used to provide further understanding of the present application, and form a part of the present application, the illustrative embodiments of the present application and the description thereof are used to explain the present application, and do not constitute improper limitation on the present application. In the drawings:

[0015] Figure 1 It is the structure block diagram of the utility model a semiconductor device test safety protection system;

[0016] Figure 2 It is the circuit diagram of the utility model overcurrent protection circuit;

[0017] Figure 3 It is the circuit diagram of the utility model temperature measuring circuit;

[0018] Figure 4 It is the circuit diagram of the utility model overvoltage protection circuit;

[0019] Figure 5 It is the circuit diagram of the utility model microprocessing module;

[0020] Figure 6 It is the circuit diagram of the utility model power module. DETAILED DESCRIPTION

[0021] The technical scheme in the embodiments of the utility model will be described clearly and completely in combination with the drawings in the embodiments of the utility model, apparently, the described embodiments are only a part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the person skilled in the art without creative labor belong to the scope of protection of the utility model.

[0022] Since the prior art cannot automatically control overcurrent protection circuit, and lacks multiple sensor detection technology, please refer to Figures 1-6The embodiment provides a safety protection system for semiconductor device testing, which can remotely and automatically control an overcurrent protection circuit and monitor test instruments by comprehensively using multiple sensors, and improves the safety performance of the instruments, and the system comprises a micro processing module 1, test instruments 4 and a power supply module 6 for providing a power supply current, and the safety protection system further comprises an overcurrent protection circuit 2, a temperature measurement circuit 3 and an overvoltage protection circuit 5 for protecting the test instruments 4, the overcurrent protection circuit 2 is composed of a current limiting resistor R10, an operational amplifier P1, an operational amplifier P2, a current limiting resistor R13, a triode Q1, a voltage dividing resistor R14, a triode Q2 and a relay, the instrument current is connected to the input port of the operational amplifier P1 through the current limiting resistor R10, the output port of the operational amplifier P1 is connected to the input port of the operational amplifier P2, the output port of the operational amplifier P2 is connected to the base of the triode Q1 through the current limiting resistor R13, the emitter of the triode Q1 is connected to one end of the relay, the collector of the triode Q1 is connected to the base of the triode Q2 through the voltage dividing resistor R14, the collector of the triode Q2 is connected to the other end of the relay, the power supply current is connected to the test instruments 4 through the switch of the relay, and the model of the micro processing chip is STM32F4.

[0023] The sliding rheostat of the operational amplifier P1 is used for threshold setting of the maximum value of the current, and a current meeting the current requirement is outputted, then the operational amplifier P2 is used for amplifying the current signal, the output current is compared, the current is detected, and the self-locking mechanism composed of the triode Q2 and the relay is controlled, the switch can be self-locked and controlled according to the size of the current, when the current is too large, the triode Q1 and the triode Q2 conduct electricity and make the self-locking relay cut off the connection between the power supply module and the test instruments, the self-locking relay can keep the disconnected state, the test instruments are ensured to be triggered to be closed again after being checked by a worker, when the current is normal, the triode Q1 and the triode Q2 are disconnected, the self-locking relay is not triggered, the current detection part of the overcurrent protection circuit can detect and protect the current of the detection instrument, the self-locking circuit is used for automatically controlling and cutting off the instrument current after overcurrent, the self-locking circuit can automatically keep after being triggered once, and the self-locking circuit can be unlocked and restored to the initial state again until being triggered again, the control method reduces external intervention, improves the safety of the circuit, and is simple in operation and high in stability.

[0024] The temperature measurement circuit 3 is composed of an external power supply, a current limiting resistor R5, a temperature measurement chip and a current limiting resistor R6, the external power supply is connected to the VCC interface of the temperature measurement chip through the current limiting resistor R5, the IO interface of the temperature measurement chip outputs a temperature signal to the micro processing module 1 through the current limiting resistor R6, and the model of the temperature measurement chip is DHT11B.

[0025] The temperature measuring circuit 3 completes the measurement of the temperature of the semiconductor in the test instrument through the temperature measuring chip, can timely track the change of the temperature of the semiconductor, does not take other actions when the temperature is normal, sends a temperature signal to the micro processing module 1 when the temperature exceeds 80 DEG C, sends temperature early warning information to the artificial control center through the micro processing module 1, and through the cooperation of the temperature measuring circuit and the overvoltage protection circuit, the temperature and voltage of the test instrument and the semiconductor can be detected in real time, various detection functions are carried out in cooperation with the overcurrent protection circuit, the safety of the detection process is ensured, the use and test safety of the semiconductor are ensured, the test fluency is improved, and accidents are avoided.

[0026] The overvoltage protection circuit 5 is composed of a current limiting resistor R7, a current limiting resistor R8, a triode Q3 and a PMOS tube Q4, the output voltage of the micro processing module 1 is connected with the base of the triode Q3 through the current limiting resistor R7 and the current limiting resistor R8, the collector of the triode Q3 is connected with the gate of the PMOS tube Q4, and the drain of the PMOS tube Q4 outputs a protection voltage to the test instrument 4.

[0027] The triode Q3 and the PMOS tube Q4 in the overvoltage protection circuit 5 can control the power supply condition of the test instrument 4 through the PMOS tube Q4, the abnormal voltage can be detected in cooperation with the fixed value resistor R7, the fixed value resistor R9, the stabilizing tube D1 and the triode Q3, the stabilizing tube D1 is a commonly used circuit element, when the power supply voltage is less than 5.1V, for example, the power supply voltage is 5V, the stabilizing tube D1 is not turned on, therefore the triode Q3 is not turned on, then the gate of the PMOS tube Q4 is pulled to 0V by the fixed value resistor R9, the PMOS tube Q4 is turned on, and the output voltage is 5V, if the power supply voltage is about 5.3V, the stabilizing tube D1 is turned on, the triode Q3 is not turned on, and the PMOS tube Q4 is normally turned on and the output voltage is about 5.3V, if the power supply voltage is 5.9V, the stabilizing tube D1 is turned on, the voltage drop between the two ends of the fixed value resistor R7 is 0.8V, the triode Q3 is turned on, the gate voltage of the PMOS tube Q4 is 5.9V, therefore the PMOS tube Q2 is not turned on, and there is no output voltage, the voltage condition of the test instrument 4 can be detected and protected through the overvoltage protection circuit, damage of the test instrument 4 caused by excessively high voltage is prevented, waste of the semiconductor is avoided, the fluency and success rate of the semiconductor test are improved, and the safety of the semiconductor material is ensured.

[0028] The micro-processing module 1 has a micro-processing chip, current limiting resistors R3, R4, R15 and R16, a temperature signal is connected to the R232 interface of the micro-processing chip through the current limiting resistor R3, a power supply current is connected to the DCR# interface of the micro-processing chip through the current limiting resistor R15, the RXD interface of the micro-processing chip outputs an instrument current to the over-current protection circuit 2 through the current limiting resistor R16, the V3 interface of the micro-processing chip outputs a detection voltage to the over-voltage protection circuit 5 through the current limiting resistor R4, the power supply module 6 is composed of an external power supply, a transformer, a bridge rectifier, a filter capacitor C1, a voltage dividing resistor R2 and a current limiting resistor R1, the external power supply provides a power supply current to the outside through the a interface of the transformer, the bridge rectifier and the current limiting resistor R1, the b interface of the bridge rectifier provides a power supply current to the outside through the voltage dividing resistor R2, and the bridge rectifier and the filter capacitor C1 are connected in parallel

[0029] The micro-processing module 1 receives a temperature signal and a power supply current, and outputs an instrument current and a detection voltage to the outside, can also send early warning information to the artificial control center, and through the cooperative matching of the over-current protection circuit, the temperature measurement circuit and the over-voltage protection circuit, the real-time detection of the temperature and voltage of the test instrument and the semiconductor can be realized, a plurality of detection functions can be realized through the over-current protection circuit, the safety of the detection process is ensured, the use test safety of the semiconductor is ensured, the test fluency is improved, accidents are avoided, and the power supply module 6 provides electric energy to the whole system.

[0030] The control mode of the utility model is automatically controlled through the controller, the control circuit of the controller can be realized through simple programming of the person skilled in the art, the provision of the power supply also belongs to the public knowledge in the field, and the utility model is mainly used for protecting the mechanical device, therefore the control mode and the circuit connection of the utility model are not explained in detail.

[0031] It should be noted that, in the present document, relational terms such as first and second and the like can be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus.

[0032] Although the embodiments of the utility model have been shown and described, it should be understood by those skilled in the art that various changes, modifications, replacements and modifications can be made to the embodiments without departing from the principles and spirits of the utility model, and the scope of the utility model is defined by the appended claims and their equivalents.

Claims

1. A safety shield system for semiconductor device testing, comprising a microprocessor module (1), a test instrument (4) and a power supply module (6) for providing a supply current, characterized in that, The safety protection system further comprises an over-current protection circuit (2), a temperature measurement circuit (3) and an over-voltage protection circuit (5) for protecting the testing instrument (4); The over-current protection circuit (2) is composed of a current-limiting resistor R10, an operational amplifier P1, an operational amplifier P2, a current-limiting resistor R13, a transistor Q1, a voltage dividing resistor R14, a transistor Q2 and a relay, the instrument current is connected to the input port of the operational amplifier P1 through the current-limiting resistor R10, the output port of the operational amplifier P1 is connected to the input port of the operational amplifier P2, the output port of the operational amplifier P2 is connected to the base of the transistor Q1 through the current-limiting resistor R13, the emitter of the transistor Q1 is connected to one end of the relay, the collector of the transistor Q1 is connected to the base of the transistor Q2 through the voltage dividing resistor R14, the collector of the transistor Q2 is connected to the other end of the relay, and the power supply current is connected to the testing instrument (4) through the switch of the relay.

2. The safety shield system of claim 1, wherein, The temperature measurement circuit (3) is composed of an external power supply, a current-limiting resistor R5, a temperature measurement chip and a current-limiting resistor R6, the external power supply is connected to the VCC interface of the temperature measurement chip through the current-limiting resistor R5, and the temperature measurement chip outputs a temperature signal to the micro-processing module (1) through the current-limiting resistor R6.

3. The safety shield system of claim 1, wherein, The over-voltage protection circuit (5) is composed of a current-limiting resistor R7, a current-limiting resistor R8, a transistor Q3 and a PMOS transistor Q4, the output voltage of the micro-processing module (1) is connected to the base of the transistor Q3 through the current-limiting resistor R7 and the current-limiting resistor R8, the collector of the transistor Q3 is connected to the gate of the PMOS transistor Q4, and the drain of the PMOS transistor Q4 outputs a protection voltage to the testing instrument (4).

4. The safety shield system of claim 2, wherein, The micro-processing module (1) is composed of a micro-processing chip, current-limiting resistors R3, R4, R15 and R16, the temperature signal is connected to the R232 interface of the micro-processing chip through the current-limiting resistor R3, the power supply current is connected to the DCR# interface of the micro-processing chip through the current-limiting resistor R15, the RXD interface of the micro-processing chip outputs the instrument current to the over-current protection circuit (2) through the current-limiting resistor R16, and the V3 interface of the micro-processing chip outputs a detection voltage to the over-voltage protection circuit (5) through the current-limiting resistor R4.

5. The safety shield system of claim 1, wherein, The power supply module (6) is composed of an external power supply, a transformer, a bridge rectifier, a filter capacitor C1, a voltage dividing resistor R2 and a current-limiting resistor R1, the external power supply provides a power supply current to the outside through the transformer, the a interface of the bridge rectifier and the current-limiting resistor R1, the b interface of the bridge rectifier provides a power supply current to the outside through the voltage dividing resistor R2, and the bridge rectifier and the filter capacitor C1 are connected in parallel.

6. The safety shield system of claim 4, wherein, The model of the micro-processing chip is STM32F4, and the model of the temperature measurement chip is DHT11B.

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