Manufacturing mold for vacuum gate valve of semiconductor equipment

Abstract

The utility model relates to the field of semiconductors, and discloses a semiconductor equipment vacuum gate valve manufacturing die, which comprises a metal upper die, a metal lower die, a metal upper die, a metal lower die, a metal upper die and a metal lower die, and is characterized in that the metal upper die can be covered and fixed on a metal middle die to form a forming cavity die of a gate valve rubber sealing ring; the metal middle die can be fixed on the metal lower die and forms a fixed cavity die of the gate valve metal substrate; and the deformable buffer part is arranged in the fixed cavity die and can deform under stress. And the metal lower mold is of a structure for supporting the metal middle mold and the metal upper mold. According to the utility model, the stress damage caused by different deformation quantities generated by thermal expansion of the metal mold and the metal substrate in the vulcanization process can be avoided, and the condition that a surface treatment layer of the metal substrate is damaged is further avoided.

Description

Technical Field

[0001] This utility model relates to the semiconductor field, and in particular to a manufacturing mold for a vacuum gate valve of a semiconductor device used in a vacuum cavity of a semiconductor ion plating or plasma etching process. Background Technology

[0002] In semiconductor manufacturing processes such as wafer fabrication, workpieces are processed and treated using methods like ion plating or plasma etching in a clean and high-vacuum environment. Corrosive and reactive gases are used in these processes. In this environment, the workpiece inlet and outlet require openable and closable valves. Previously, valves were designed by creating grooves (dovetail grooves, etc.) on metal parts such as aluminum or stainless steel plates, and then installing fluororubber or perfluoroether sealing rings on the metal parts to form a combined valve. However, because the sealing rings easily detach from the metal parts during use, this was improved to a one-piece valve design. This one-piece valve design involves bonding the metal parts and the fluororubber or perfluoroether sealing rings together to form a single unit.

[0003] Because the environment is highly clean and vacuum, the metal parts used in valves require special surface treatments. For example, aluminum requires hard anodizing or ordinary anodizing, while stainless steel requires passivation. Previously, modular valves consisted of two separate components—the metal parts and the sealing ring—which were then assembled. The metal parts were treated before the rubber sealing ring was installed, preventing damage to either surface. However, modern integrated valves are molded as a single piece. If the metal parts are surface-treated before molding the sealing ring, and then the rubber sealing ring is molded, the metal parts need to be placed in a mold. Since molding the rubber sealing ring requires high temperatures, the mold itself is also at a high temperature. This causes the metal parts to expand, resulting in a tight fit with the mold. During demolding, the surface of the metal parts is damaged, rendering the product unusable. This tight fit due to thermal expansion is because both the mold and the metal parts have tolerances during manufacturing; perfect precision is impossible. This leads to localized areas where the metal parts fit tightly with the mold after thermal expansion.

[0004] The current surface treatment method for one-piece molded valves is as follows: first, the rubber sealing ring is molded in one piece, and then the metal parts are surface treated. Because the surface treatment requires grinding and sandblasting of the metal parts, and also immersion in acidic or alkaline liquids, to prevent damage to the rubber sealing ring during grinding and sandblasting, pressure-resistant and acid / alkali-resistant tape must be used to cover the rubber sealing ring before grinding and sandblasting. Since grinding and sandblasting can damage the tape, to prevent the acid or alkali from penetrating the damaged tape and damaging the rubber sealing ring during immersion in acidic or alkaline liquids, the original tape must be removed and replaced with new tape before proceeding with the immersion in acidic or alkaline liquids.

[0005] Because the protruding rubber seal is irregularly shaped and relatively small, applying masking tape is difficult. After the tape is applied, it is prone to lifting up in areas during sandblasting, causing localized damage to the rubber seal. Furthermore, because the adhesion between the rubber seal and the metal is very tight, to protect this adhesion, the tape must completely cover it, leaving the metal part uncovered. However, this prevents the metal part from being anodized, thus only protecting the rubber seal and leaving the adhesion unprotected, leading to varying degrees of damage and localized delamination. This process is both complex and has a very high defect rate.

[0006] It should be noted that in existing technologies, the vulcanization and pressing of the sealing ring is an independent step, and the metal substrate does not participate in the vulcanization and pressing process. However, by changing the process sequence (first treating the surface of the metal substrate, and then vulcanizing the adhesive integrally within the metal substrate), the technical problem of the metal substrate being unable to be anodized during the production of vacuum valves for semiconductor equipment, due to the need to protect the sealing ring from process damage (grinding, sandblasting, and immersion in acid or alkaline liquids), has been solved. However, due to the change in process sequence, the metal mold and the metal substrate will exhibit different deformations due to their different coefficients of thermal expansion during the integral vulcanization and pressing process. This results in stress between the metal mold and the metal substrate, which can damage the surface treatment layer of the metal substrate. Therefore, changing the process sequence introduces new technical problems that need to be addressed. Utility Model Content

[0007] The utility model description section introduces a series of simplified concepts, all of which are simplifications of existing technologies in the field, and will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0008] The technical problem to be solved by this utility model is to provide a semiconductor equipment vacuum valve manufacturing mold that can avoid stress damage caused by the different deformation of metal molds and metal substrates due to thermal expansion during the vulcanization process and avoid surface treatment layer of metal substrates.

[0009] To solve the above-mentioned technical problems, the present invention provides a semiconductor equipment vacuum valve manufacturing mold, comprising:

[0010] The upper metal mold 1 can be fixed on the middle metal mold 3, and it forms the forming cavity mold 2 for the rubber sealing ring of the valve.

[0011] The middle metal mold 3 can be fixed on the lower metal mold 5, and it forms a fixed cavity mold 4 for the metal base of the valve.

[0012] The deformable buffer part 6 is arranged in the fixed cavity mold 4 and can deform under force.

[0013] The lower metal mold 5 is formed to support the middle metal mold 3 and the upper metal mold 1.

[0014] Preferably, the manufacturing mold for the vacuum valve of the semiconductor device is further improved such that the size of the fixed cavity mold of the metal middle mold 3 is at least 5 mm larger than the size of the valve metal base component it accommodates, so as to reserve sufficient deformation space for the metal base component and avoid stress damage caused by thermal expansion of the metal mold and the metal base component during the vulcanization process.

[0015] Preferably, the manufacturing mold for the vacuum valve of the semiconductor device is further improved such that the size of the fixed cavity mold of the metal middle mold 3 is 10mm to 40mm larger than the size of the valve metal base piece it accommodates. This reserved deformation space should not be too large, as a certain amount of reserved deformation space will cause the rubber material to overflow during the vulcanization process.

[0016] Preferably, the manufacturing mold for the vacuum valve of the semiconductor device is further improved, and the deformable buffer part is made of high-temperature resistant special engineering plastic, preferably Teflon material or heat-resistant special plastic.

[0017] When precise dimensional accuracy is required, the deformable buffer can be placed directly within the fixed cavity of the metal intermediate mold without being fixed. The dimensional fit between the deformable buffer, the metal base, and the fixed cavity ensures that the deformable buffer remains positioned between the metal base and the fixed cavity without significant movement. Correspondingly, to avoid process deviations and uneven stress caused by misalignment of the deformable buffer, it is preferable to secure the deformable buffer within the fixed cavity of the metal intermediate mold using screws, clips, or adhesive.

[0018] Preferably, the manufacturing mold for the vacuum valve of the semiconductor device is further improved, wherein a first step structure 9 is formed on the adjacent side of the deformable buffer part 6 and the fixed cavity mold 4 of the metal middle mold 3, and a second step structure 10 adapted to the first step structure 9 is formed on the side wall of the fixed cavity mold 4 of the metal middle mold 3, and the first step structure 9 and the second step structure 10 form an anti-reverse stabilizing support structure.

[0019] Preferably, the manufacturing mold for the vacuum valve of the semiconductor device is further improved by forming a positioning structure between the upper metal mold 1 and the middle metal mold 3, and a positioning structure between the middle metal mold 3 and the lower metal mold 5.

[0020] Preferably, the manufacturing mold for the semiconductor device vacuum valve is further improved, wherein a plurality of first positioning holes 11 are formed on the top surface of the metal middle mold 3, and a plurality of second positioning holes 12 are formed on the bottom surface of the metal middle mold 3;

[0021] Multiple first positioning posts 13 are formed on the bottom surface of the metal upper mold 1;

[0022] Multiple second positioning posts 14 are formed on the top surface of the lower metal mold 5;

[0023] The upper metal mold 1 and the middle metal mold 3 are positioned and fixed by the first positioning hole 11 and the first positioning post 13;

[0024] The metal middle mold 3 and the metal lower mold 5 are positioned and fixed by the second positioning hole 12 and the second positioning post 14.

[0025] The working principle and technical effects of this utility model are as follows;

[0026] By changing the process sequence to solve the problem of preventing the metal substrate from being anodized due to process damage (grinding, sandblasting, soaking in acid or alkali liquids) in the production of vacuum valves for semiconductor equipment, the existing sealing ring molds cannot be used directly, creating new technical problems.

[0027] First, the metal base of the valve is prefabricated. After processing, pressure-resistant and acid-alkali-resistant tape is used to cover the grooves where the sealing ring is bonded on the metal base. Then, grinding, sandblasting and soaking in acid and alkali liquids are performed. Since there is no rubber sealing ring on the metal base at this time, there is no concern that the grinding, sandblasting and soaking in acid and alkali liquids will damage the rubber sealing ring. Therefore, there is no need to replace the tape, and the operation is simple and convenient.

[0028] After the surface treatment of the metal substrate is completed, the present invention provides an upper metal mold, a middle metal mold, and a lower metal mold. The middle metal mold is fixed on the lower metal mold, and the treated metal substrate is placed into the fixed cavity of the middle metal mold. Then, the rubber material is placed into the groove of the metal substrate, and the upper metal mold is installed. A vulcanization integral molding process is then performed to produce the sealing ring. That is, by changing the process sequence (first performing surface treatment of the metal substrate, and then vulcanizing the rubber material integrally in the metal substrate), the sealing ring is produced.

[0029] However, due to the altered process sequence, the metal mold and the metal substrate exhibit different deformations during the integrated vulcanization molding process (heat pressing) due to their different coefficients of thermal expansion. This results in stress between the metal mold and the metal substrate, which can damage the surface treatment layer of the metal substrate. Therefore, existing sealing ring molds designed based on product dimensions and the coefficient of thermal expansion of the metal cannot be applied to the manufacturing method of this invention. Directly using existing sealing ring molds will inevitably cause damage to the metal substrate treatment layer during integrated vulcanization molding.

[0030] Therefore, this utility model provides a metal mold that differs from the prior art by adding a deformable buffer part. After adjusting the process sequence (first grinding and sandblasting, then soaking in acid and alkali liquids, and finally vulcanizing and pressing the sealing ring in the metal base), during the vulcanization integral molding (heat pressing) process, even if the metal mold and the metal base expand due to heat, they will not suffer stress damage due to the difference in thermal deformation, thus avoiding damage to the metal base treatment layer. Attached Figure Description

[0031] The accompanying drawings are intended to illustrate the general characteristics of the methods, structures, and materials used in specific exemplary embodiments of the present invention, supplementing the description in the specification. However, the accompanying drawings are schematic diagrams not drawn to scale and may not accurately reflect the precise structural or performance characteristics of any of the given embodiments. The accompanying drawings should not be construed as limiting or restricting the range of numerical values ​​or properties covered by the exemplary embodiments of the present invention. The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0032] Figure 1 This is a schematic diagram of the metal upper mold of this utility model. Figure 1 It shows the upward viewing angle.

[0033] Figure 2 This is a schematic diagram of the metal intermediate mold of this utility model. Figure 1 It displays the top-down view.

[0034] Figure 3 This is a schematic diagram of the metal lower mold of this utility model. Figure 1 It displays the top-down view.

[0035] Figure 4 This is a schematic diagram of the metal upper mold of this utility model. Figure 2 It shows the cross-sectional angle.

[0036] Figure 5 This is a schematic diagram of the metal intermediate mold of this utility model. Figure 2 It shows the cross-sectional angle.

[0037] Figure 6 This is a schematic diagram of the metal lower mold of this utility model. Figure 2 It shows the cross-sectional angle.

[0038] Figure 7 This is a schematic diagram of the usage process of this utility model.

[0039] Explanation of reference numerals in the attached figures:

[0040] Metal upper mold 1;

[0041] Molding cavity mold 2;

[0042] Metal Mold 3;

[0043] Fixed cavity mold 4;

[0044] Metal lower mold 5;

[0045] Deformable buffer section 6;

[0046] Positioning post 7;

[0047] Sealing ring cavity 8;

[0048] First-stage structure 9;

[0049] Second-stage structure 10;

[0050] First positioning hole 11;

[0051] Second positioning hole 12;

[0052] First positioning post 13;

[0053] Second positioning post 14. Detailed Implementation

[0054] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can fully understand other advantages and technical effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through different specific embodiments, and various details in this specification can also be applied based on different viewpoints, with various modifications or changes made without departing from the overall design concept of the utility model. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. The following exemplary embodiments of this utility model can be implemented in many different forms and should not be construed as limited to the specific embodiments set forth herein. It should be understood that these embodiments are provided to make the disclosure of this utility model thorough and complete, and to fully convey the technical solutions of these exemplary embodiments to those skilled in the art. It should be understood that when an element is referred to as "connected" or "combined" to another element, the element can be directly connected or combined to the other element, or there may be intermediate elements. The difference is that when an element is referred to as "directly connected" or "directly combined" to another element, there are no intermediate elements. Throughout the drawings, the same reference numerals always denote the same elements. Example

[0055] refer to Figures 1 to 6 As shown, this utility model provides a manufacturing mold for a semiconductor equipment vacuum valve, comprising:

[0056] The upper metal mold 1 can be fixed on the middle metal mold 3, and it forms the forming cavity mold 2 for the rubber sealing ring of the valve.

[0057] The middle metal mold 3 can be fixed on the lower metal mold 5, and it forms a fixed cavity mold 4 for the metal base of the valve.

[0058] The deformable buffer part 6 is arranged in the fixed cavity mold 4 and can deform under force.

[0059] The lower metal mold 5 is formed to support the middle metal mold 3 and the upper metal mold 1.

[0060] The size of the fixed cavity mold of the metal middle mold 3 is at least 5 mm larger than the size of the valve metal base it accommodates, and preferably the size of the fixed cavity mold of the metal middle mold 3 is 10 mm to 40 mm larger than the size of the valve metal base it accommodates.

[0061] Optionally, the deformable cushioning part is made of high-temperature resistant special engineering plastics, preferably Teflon.

[0062] Optionally, the deformable buffer part is fixed in the fixed cavity of the metal middle mold by screws, clips or adhesive.

[0063] Further improvements to the above embodiments;

[0064] Continue to refer to Figures 4 to 6 As shown, a first step structure 9 is formed on the side adjacent to the deformable buffer part 6 and the fixed cavity mold 4 of the metal middle mold 3, and a second step structure 10 adapted to the first step structure 9 is formed on the side wall of the fixed cavity mold 4 of the metal middle mold 3.

[0065] The top surface of the metal middle mold 3 has a plurality of first positioning holes 11, and the bottom surface of the metal middle mold 3 has a plurality of second positioning holes 12;

[0066] Multiple first positioning posts 13 are formed on the bottom surface of the metal upper mold 1;

[0067] Multiple second positioning posts 14 are formed on the top surface of the lower metal mold 5;

[0068] The upper metal mold 1 and the middle metal mold 3 are positioned and fixed by the first positioning hole 11 and the first positioning post 13;

[0069] The metal middle mold 3 and the metal lower mold 5 are positioned and fixed by the second positioning hole 12 and the second positioning post 14.

[0070] refer to Figure 7 As shown, the process of using the semiconductor equipment vacuum valve manufacturing mold provided in the above embodiments of this utility model is as follows;

[0071] S1 provides metal base components for valves;

[0072] S2, the groove of the sealing ring of the metal base component of the valve is covered by the existing technical solution;

[0073] S3, Perform a preset machining process on the metal base of the valve (grinding and sandblasting to form a treatment layer).

[0074] S4, provides metal upper mold 1, for reference. Figure 1 and Figure 4 As shown, the upper metal mold 1 is formed into the molding cavity mold 2 for the valve rubber sealing ring;

[0075] Provide metal mid-mold 3, for reference. Figure 2 and Figure 5 As shown, the metal middle mold 3 is formed into a fixed cavity mold 4 for the metal base of the valve, and a deformable buffer part is formed in the fixed cavity mold;

[0076] Provide metal lower mold 5, for reference. Figure 3 and Figure 6 As shown, the lower metal mold 5 is formed to support the middle metal mold 3 and the upper metal mold 1;

[0077] S5, the metal middle mold 3 is arranged on the metal lower mold 5 through positioning pins and positioning holes, and the deformable buffer part 6 is placed in the fixed cavity mold 4 of the metal middle mold 3 after being arranged around the metal base.

[0078] S6, Add the specified adhesive to the metal base, the adhesive is located in the sealing ring groove of the metal base, and the groove position corresponds to the sealing ring cavity 8;

[0079] S7, with the metal upper mold 1 covered, is positioned by positioning pins and positioning holes, and the first step structure and the second step structure form an anti-reverse stability support, and enters the vulcanization molding equipment for vulcanization molding;

[0080] S8, remove the upper metal mold 1, remove the deformable buffer part 6, remove the middle metal mold 3 and the lower metal mold 5 to obtain the vacuum valve.

[0081] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will also be understood that, unless explicitly defined herein, terms such as those defined in a general dictionary shall be interpreted as having the meaning consistent with their meaning in the relevant field context, and not as having an idealized or overly formal meaning.

[0082] The present invention has been described in detail above through specific embodiments and examples, but these are not intended to limit the present invention. Many modifications and improvements can be made by those skilled in the art without departing from the principles of the present invention, and these should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor device vacuum gate valve manufacturing mold characterized by comprising: The utility model relates to a metal upper die (1) can be fixed on the metal middle die (3) which forms the forming cavity die (2) of the door valve rubber seal ring, the metal middle die (3) can be fixed on the metal lower die (5) which forms the fixed cavity die (4) of the door valve metal base, the deformable buffer part (6) is arranged in the fixed cavity die (4) and can be deformed under force, the metal lower die (5) forms the structure of supporting the metal middle die (3) and the metal upper die (1). The size of the fixed cavity die of the metal middle die (3) is at least 5mm larger than the size of the door valve metal base contained therein. The size of the fixed cavity die of the metal middle die (3) is in the range of 10mm to 40mm larger than the size of the door valve metal base contained therein. The deformable buffer part is made of high-temperature-resistant special engineering plastic. The deformable buffer part is fixed in the fixed cavity die of the metal middle die by screws, buckles or adhesion.

2. The semiconductor device vacuum gate valve manufacturing mold of claim 1, wherein: The deformable buffer part (6) and the fixed cavity die (4) of the metal middle die (3) have a first step structure (9) on one side adjacent thereto, and the side wall of the fixed cavity die (4) of the metal middle die (3) has a second step structure (10) adapted to the first step structure (9).

3. The semiconductor device vacuum gate valve manufacturing mold of claim 2, wherein: Positioning structures are formed between the metal upper die (1) and the metal middle die (3) and between the metal middle die (3) and the metal lower die (5).

4. The semiconductor device vacuum gate valve manufacturing mold of claim 1, wherein: The top surface of the metal middle die (3) has a plurality of first positioning holes (11), and the bottom surface of the metal middle die (3) has a plurality of second positioning holes (12).

5. The semiconductor device vacuum gate valve manufacturing mold of claim 1, wherein: The bottom surface of the metal upper die (1) has a plurality of first positioning columns (13).

6. The semiconductor device vacuum gate valve manufacturing mold of claim 1, wherein: The top surface of the metal lower die (5) has a plurality of second positioning columns (14).

7. The semiconductor device vacuum gate valve manufacturing mold of claim 1, wherein: The metal upper die (1) and the metal middle die (3) are positioned and fixed by the first positioning holes (11) and the first positioning columns (13).

8. The semiconductor device vacuum gate valve manufacturing mold of claim 1, wherein: The metal middle die (3) and the metal lower die (5) are positioned and fixed by the second positioning holes (12) and the second positioning columns (14). ​ ​ ​ ​

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