Flexible conductive anti-permeation support frame for wafer electroplating

Abstract

The utility model provides a flexible conductive impermeable support frame for wafer electroplating, which is applied to the technical field of wafer electroplating and comprises a metal conductive rod, a metal conductive block and a metal support frame, the metal conductive rod and the metal conductive block are both located in a cavity formed by the latch structure between the upper metal conductive ring and the lower metal conductive ring, one end of the metal conductive block is in contact with the wafer, and the other end of the metal conductive block is clamped with the metal conductive rod; the metal conductive block and the lower metal conductive ring are arranged on an annular platform at the bottom of the metal support frame, and an elastic element is arranged between the annular platform and the metal conductive block; an insulation sealing ring is installed on the metal supporting frame, the inner circumferential side face of the metal supporting frame is wrapped by the insulation sealing ring, and the insulation sealing ring comprises an annular top protrusion. The metal conductive block is used for conducting electricity for the wafer, the elastic element is used for achieving flexible contact, the protruding structure on the sealing ring is used for achieving sealing, the current can be stable and uniform, meanwhile, the deformation amount of the insulating sealing ring is increased, and good sealing is achieved.

Description

Technical Field

[0001] This utility model belongs to the field of wafer electroplating technology, specifically relating to a flexible conductive anti-permeation support frame for wafer electroplating. Background Technology

[0002] Wafer electroplating is one of the key steps in the semiconductor chip manufacturing process. There are three main types: vertical rack plating, tilted rotary spraying, and horizontal spraying. Among them, horizontal spraying is the current mainstream method.

[0003] In horizontal spraying, when electroplating the surface of a wafer, the wafer is usually held by a wafer support and a pressure plate. The front side of the wafer is exposed to the electroplating solution through an opening at the bottom of the wafer support, and the pressure plate presses the wafer tightly onto the wafer support to prevent the electroplating solution from contaminating the back side of the wafer.

[0004] After the wafer support holder supports the wafer into the plating solution, the plating solution, due to pressure, will rush through the sealing ring, corroding the back of the wafer and the conductive ring, resulting in uneven current, which in turn leads to uneven wafer plating and affects the plating quality.

[0005] Therefore, a flexible conductive anti-permeation support frame for wafer electroplating is needed to prevent electroplating solution from entering the interior of the support frame and contaminating the back side of the wafer during the electroplating process. Utility Model Content

[0006] In view of the above-mentioned problems in the prior art, the purpose of this utility model is to provide a flexible conductive anti-permeation support frame for wafer electroplating. It uses metal conductive blocks to conduct electricity to the wafer, uses elastic elements to achieve flexible contact, and uses the protruding structure on the sealing ring to achieve sealing. It can make the current stable and uniform while increasing the deformation of the insulating sealing ring, thus achieving a good seal.

[0007] A flexible conductive anti-permeation support frame for wafer electroplating includes an upper metal conductive ring, a metal conductive rod, a metal conductive block, a lower metal conductive ring, a metal support frame, an insulating sealing ring, and an elastic element. The upper and lower metal conductive rings are symmetrically arranged. The metal conductive rod and the metal conductive block are located within the cavity formed by the toothed structure between the upper and lower metal conductive rings. One end of the metal conductive block contacts the wafer, and the other end is engaged with the metal conductive rod. An annular platform is provided at the bottom of the metal support frame. The metal conductive block and the lower metal conductive ring are both disposed on the annular platform, and an elastic element is provided between the annular platform and the metal conductive block. An insulating sealing ring is installed on the metal support frame, covering the inner circumferential side of the metal support frame. The insulating sealing ring includes an annular top protrusion for contacting the pressed wafer.

[0008] Preferably, the inner ring of the upper metal conductive ring is provided with upper inner teeth arranged in a comb-like pattern. The lower surface of the upper inner teeth is provided with two symmetrically distributed slots. An upper tooth gap is formed between two adjacent upper inner teeth, and a receiving groove for accommodating the metal conductive rod is formed between the two corresponding slots on the two adjacent upper inner teeth.

[0009] Preferably, the inner ring of the lower metal conductive ring is provided with lower inner teeth arranged in a comb-like pattern. The upper surface of the lower inner teeth is provided with two symmetrically distributed slots. A lower tooth gap is formed between two adjacent lower inner teeth, and a receiving groove for accommodating the metal conductive rod is formed between the two corresponding slots on the two adjacent lower inner teeth.

[0010] Preferably, the cavity formed between the receiving groove formed by the first slot on the upper metal conductive ring and the receiving groove formed by the second slot on the lower metal conductive ring presses and fixes the metal conductive rod.

[0011] Preferably, the metal conductive block is disposed within the cavity formed by the upper tooth gap of the upper metal conductive ring and the lower tooth gap of the lower metal conductive ring.

[0012] Preferably, multiple metal conductive blocks and metal conductive rods are provided, which are arranged in a ring array along the metal support frame. The number of metal conductive blocks, the number of metal conductive rods, and the number of cavities formed by the upper tooth gap of the upper metal conductive ring and the lower tooth gap of the lower metal conductive ring correspond to each other.

[0013] Preferably, the metal conductive block includes a movable end and a free end. The free end of the metal conductive block has at least one stepped protrusion along the radial direction on its inner peripheral sidewall for contacting and conducting electricity with the wafer. The movable end of the metal conductive block is provided with an upper groove for connecting with the metal conductive rod, and the metal conductive block can make incomplete circular motion around the metal conductive rod.

[0014] Preferably, the annular platform has multiple placement slots arranged in a circumferential array, and the metal conductive block has a lower groove at the position corresponding to the placement slot. The elastic element is disposed in the cavity formed between the placement slot of the annular platform and the lower groove of the metal conductive block, and the elastic element is used to support the metal conductive block.

[0015] Preferably, the inner circumferential side of the metal support frame is provided with an annular protrusion extension along the radial direction, and the insulating sealing ring includes an annular protrusion snap-fit ​​portion, which snaps with the protrusion extension portion of the insulating sealing ring.

[0016] Preferably, when the wafer is not pressed down, the highest height of the top protrusion of the insulating sealing ring is higher than the highest height of the metal conductive block.

[0017] The beneficial effects of this utility model are: the flexible conductive anti-permeation support frame for wafer electroplating, through the symmetrical arrangement of the upper and lower metal conductive rings, arranges the metal conductive rod and metal conductive block in the cavity formed between the upper and lower metal conductive rings, and can achieve positional stability of the metal conductive rod and metal conductive block by utilizing the relative pressure between the upper and lower metal conductive rings.

[0018] By using the structural design of the metal conductive block in conjunction with the metal conductive rod, upper metal conductive ring, and lower metal conductive ring, the flexibility of the metal conductive block can be improved. When the wafer is pressed down, the metal conductive block can adjust its position around the metal conductive rod. The movable design of the metal conductive block can achieve uniform power supply in the circumference of the wafer.

[0019] An elastic element is placed between the metal conductive block and the metal support frame. The elastic element buffers the pressure on the metal conductive block when the wafer is pressed down. At the same time, it can also increase the deformation of the insulating sealing ring, which helps to improve the sealing performance during electroplating and prevent the electroplating solution from flowing through the insulating sealing ring and corroding the back of the wafer and the conductive ring.

[0020] In addition, an annular top protrusion and an annular protrusion snap-fit ​​portion are configured on the insulating sealing ring. By snapping the annular protrusion snap-fit ​​portion with the annular protrusion extension of the metal support frame, the insulating sealing ring can completely cover the inner circumferential side of the metal support frame, preventing electroplating solution leakage. The annular top protrusion increases the deformation of the insulating sealing ring when the wafer is pressed down, which can further improve the sealing performance. Attached Figure Description

[0021] The accompanying drawings are provided to further illustrate the present invention and form part of the specification. They are used together with the embodiments of the present invention to explain the present invention, but do not constitute a limitation thereof. In the drawings:

[0022] Figure 1 This is a schematic diagram of the structure of this utility model;

[0023] Figure 2 This is an exploded view of this utility model;

[0024] Figure 3 This is the utility model Figure 2 Enlarged view of point A in the middle;

[0025] Figure 4 This is the utility model Figure 2 Enlarged view at point B in the middle;

[0026] Figure 5 This is the utility model Figure 2 Enlarged view at point C;

[0027] Figure 6This is a schematic diagram of the upper metal conductive ring of this utility model;

[0028] Figure 7 This is the utility model Figure 6 Enlarged view at point D;

[0029] Figure 8 This is a schematic diagram of the conductive mechanism of this utility model;

[0030] Figure 9 This is the utility model Figure 8 Enlarged view at point E in the middle;

[0031] Figure 10 This is a cross-sectional view of the present invention;

[0032] Figure 11 This is the utility model Figure 10 Enlarged view of point F in the middle.

[0033] The markings in the diagram are: 1. Upper metal conductive ring; 101. Upper internal teeth; 102. Upper tooth gap; 103. Slot 1;

[0034] 2. Metal conductive rod;

[0035] 3. Metal conductive block; 301. Upper groove; 302. Stepped protrusion; 303. Lower groove;

[0036] 4. Lower metal conductive ring; 401. Lower inner tooth; 402. Lower tooth gap; 403. Slot 2;

[0037] 5. Metal support frame; 501. Inner circumferential side; 502. Placement groove; 503. Annular platform; 504. Protruding extension;

[0038] 6. Insulating sealing ring; 601. Top protrusion; 602. Protruding snap-fit ​​part;

[0039] 7. Elastic element. Detailed Implementation

[0040] Example 1

[0041] like Figure 1 , Figure 2 , Figure 10 , Figure 11 As shown, the flexible conductive anti-permeation support frame for wafer electroplating includes an upper metal conductive ring 1, a metal conductive rod 2, a metal conductive block 3, a lower metal conductive ring 4, a metal support frame 5, an insulating sealing ring 6, and an elastic element 7. The upper metal conductive ring 1, the metal conductive rod 2, the metal conductive block 3, and the lower metal conductive ring 4 are housed within the metal support frame 5.

[0042] like Figure 1As shown, the metal support frame 5 is funnel-shaped, and an annular platform 503 is provided at the bottom of the metal support frame 5. The lower metal conductive ring 4 and the metal conductive block 3 are disposed on the annular platform 503 of the metal support frame 5. The width of the annular platform 503 is about 0 to 10 mm wider than the width of the lower metal conductive ring 4.

[0043] The positional relationship between the upper metal conductive ring 1, the metal conductive rod 2, the metal conductive block 3, and the lower metal conductive ring 4 is as follows: Figure 2 , Figure 8 , Figure 9 As shown. The specific structure is as follows:

[0044] like Figure 2 , Figure 4 As shown, the inner ring of the lower metal conductive ring 4 is provided with lower inner teeth 401 arranged in a comb-like pattern, and the upper surface of the lower inner teeth 401 is provided with two symmetrically distributed slots 403. Among them, a lower tooth gap 402 is formed between two adjacent lower inner teeth 401, and a receiving groove for accommodating the metal conductive rod 2 is formed between the two corresponding slots 403 on the two adjacent lower inner teeth 401. That is, the metal conductive rod 2 is located in the lower tooth gap 402 of the lower metal conductive ring 4, and the two ends of the metal conductive rod 2 are respectively engaged with the slots 403 on the two adjacent lower inner teeth 401.

[0045] like Figure 6 , Figure 7 As shown, the upper metal conductive ring 1 and the lower metal conductive ring 4 are symmetrically arranged. Specifically, the inner ring of the upper metal conductive ring 1 is provided with upper inner teeth 101 arranged in a comb-like pattern. The lower surface of the upper inner teeth 101 is provided with two symmetrically distributed slots 103. An upper tooth gap 102 is formed between two adjacent upper inner teeth 101. A receiving groove for accommodating the metal conductive rod 2 is formed between the two corresponding slots 103 on the two adjacent upper inner teeth 101.

[0046] It should be noted that the upper inner teeth 101 of the upper metal conductive ring 1 and the lower inner teeth 401 of the lower metal conductive ring 4 are the same size, and the upper tooth gap 102 and the lower tooth gap 402 are the same size to prevent them from being unable to rotate or from detaching.

[0047] Therefore, based on the symmetrical arrangement of the upper metal conductive ring 1 and the lower metal conductive ring 4, the metal conductive rod 2 can be pressed and fixed within the cavity formed between the upper metal conductive ring 1 and the lower metal conductive ring 4. The metal conductive rod 2 is cylindrical, with a radial dimension ranging from 0.5 to 1.5 mm. Multiple metal conductive rods 2 are provided, and the number of metal conductive rods 2 corresponds to the number of cavities formed by the upper tooth gap 102 of the upper metal conductive ring 1 and the lower tooth gap 402 of the lower metal conductive ring 4.

[0048] like Figure 3As shown, the metal conductive block 3 includes a movable end and a free end. At least one stepped protrusion 302 is provided on the inner peripheral sidewall of the free end of the metal conductive block 3 along the radial direction. When the wafer is pressed down, the stepped protrusion 302 on the free end of the metal conductive block 3 contacts the wafer and conducts electricity. The movable end of the metal conductive block 3 is provided with an upper groove 301 that is connected to the metal conductive rod 2. The metal conductive block 3 can make incomplete circular motion around the metal conductive rod 2.

[0049] like Figure 1 As shown, the metal conductive block 3 is mounted on the annular platform 503 of the metal support frame 5, and the movable end of the metal conductive block 3 is located in the cavity formed by the upper tooth gap 102 of the upper metal conductive ring 1 and the lower tooth gap 402 of the lower metal conductive ring 4, and the upper groove 301 of the movable end supports the metal conductive rod 2. The number of metal conductive blocks 3 and metal conductive rods 2 is the same.

[0050] like Figure 5 , Figure 10 , Figure 11 As shown, the annular platform 503 has multiple placement slots 502 arranged in a circumferential array. The metal conductive block 3 has a recessed groove 303 at the corresponding position of each placement slot 502. The cavity formed between the placement slots 502 of the annular platform 503 and the recessed grooves 303 of the metal conductive block 3 is used to place the elastic element 7, which supports the metal conductive block 3. The number of elastic elements 7 is the same as the number of placement slots 502. It should be noted that at least one end of each elastic element 7 contacts the metal conductive block 3, and at least one end contacts the bottom of the placement slot 502. The metal conductive block 3 conducts electricity to the wafer, and the elastic element 7 achieves flexible contact.

[0051] like Figure 5 , Figure 11 As shown, an annular protrusion extension 504 is provided on the inner peripheral side 501 of the metal support frame 5 along the radial direction, and the protrusion height of the protrusion extension 504 along the radial direction is 0.5 to 2 mm. An insulating sealing ring 6 is installed on the metal support frame 5, which completely covers the protrusion extension 504 on the inner peripheral side 501 of the metal support frame 5 and does not contact the placement groove 502.

[0052] like Figure 10 , Figure 11 As shown, the insulating sealing ring 6 includes an annular top protrusion 601 and an annular protrusion engaging portion 602. The protrusion engaging portion 602 of the insulating sealing ring 6 engages with the protrusion extension portion 504 of the metal support frame 5. The top protrusion 601 of the insulating sealing ring 6 is used to contact the pressed wafer. When the wafer is not pressed down, the highest height of the top protrusion 601 of the insulating sealing ring 6 is higher than the highest height of the metal conductive block 3.

[0053] Working principle: When using this wafer electroplating flexible conductive anti-permeation support frame, the wafer is placed on the stepped protrusion 302 of the metal conductive block 3. The free end of the metal conductive block 3 contacts the wafer and conducts electricity. The movable end of the metal conductive block 3 is adjusted along the metal conductive rod 2. At the same time, the elastic element 7 can buffer the pressure of the wafer pressing down on the metal conductive block 3.

[0054] As the pressure plate (not shown in the figure) presses the wafer downwards, the top protrusion 601 of the insulating sealing ring 6 contacts and deforms with the wafer. At the same time, after the insulating sealing ring 6 is squeezed, its protruding snap-fit ​​portion 602 deforms accordingly, and further clamps with the protruding extension portion 504 of the metal support frame 5, so that the insulating sealing ring 6 further covers the inner peripheral side 501 of the metal support frame 5, ensuring the sealing of the support frame.

[0055] After the wafer is clamped and fixed by the cooperation of the pressure plate and the support frame, the front side of the wafer can be brought into contact with the electroplating solution through the bottom opening of the metal support frame 5 to perform the electroplating operation.

[0056] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A wafer electroplated flexible conductive impervious support frame, characterized in that, The upper metal conductive ring (1), the metal conductive rod (2), the metal conductive block (3), the lower metal conductive ring (4), the metal support frame (5), the insulating sealing ring (6) and the elastic element (7) are arranged in the cavity formed by the clamping tooth structure between the upper metal conductive ring (1) and the lower metal conductive ring (4). The metal conductive block (3) is arranged in the cavity formed by the upper tooth gap (102) of the upper metal conductive ring (1) and the lower tooth gap (402) of the lower metal conductive ring (4). The metal support frame (5) is provided with a ring-shaped platform (503), and the metal conductive block (3) and the lower metal conductive ring (4) are arranged on the ring-shaped platform (503). The metal support frame (5) is provided with a ring-shaped platform (503), and the metal conductive block (3) and the lower metal conductive ring (4) are arranged on the ring-shaped platform (503).

2. The wafer electroplated flexible conductive impervious support frame of claim 1, wherein, The inner circle of the upper metal conductive ring (1) is provided with upper inner teeth (101) arranged in a comb shape, the lower surface of the upper inner teeth (101) is provided with two symmetrically distributed clamping grooves (103), the upper tooth gap (102) is formed between the two adjacent upper inner teeth (101), and the two clamping grooves (103) corresponding to the two adjacent upper inner teeth (101) form a receiving groove for accommodating the metal conductive rod (2).

3. The wafer electroplated flexible conductive impervious support frame of claim 2, wherein, The inner circle of the lower metal conductive ring (4) is provided with lower inner teeth (401) arranged in a comb shape, the upper surface of the lower inner teeth (401) is provided with two symmetrically distributed clamping grooves (403), the lower tooth gap (402) is formed between the two adjacent lower inner teeth (401), and the two clamping grooves (403) corresponding to the two adjacent lower inner teeth (401) form a receiving groove for accommodating the metal conductive rod (2).

4. The wafer electroplated flexible conductive impervious support frame of claim 3, wherein, The cavity formed between the receiving groove composed of the clamping groove (103) on the upper metal conductive ring (1) and the receiving groove composed of the clamping groove (403) on the lower metal conductive ring (4) tightly fixes the metal conductive rod (2).

5. The wafer electroplated flexible conductive impervious support frame of claim 3, wherein, The metal conductive block (3) is arranged in the cavity formed by the upper tooth gap (102) of the upper metal conductive ring (1) and the lower tooth gap (402) of the lower metal conductive ring (4).

6. The wafer electroplated flexible conductive impervious support frame of claim 5, wherein, The metal conductive block (3) and the metal conductive rod (2) are provided with a plurality of ring-shaped array distributions along the metal support frame (5), and the number of the metal conductive block (3), the number of the metal conductive rod (2), and the number of the cavity formed by the upper tooth gap (102) of the upper metal conductive ring (1) and the lower tooth gap (402) of the lower metal conductive ring (4) correspond.

7. The wafer electroplated flexible conductive impervious support frame of claim 1 wherein, The metal conductive block (3) comprises a movable end and a free end, and a step-shaped protrusion (302) is arranged on the inner circumferential side wall of the free end of the metal conductive block (3) in the radial direction, for contact and conduction with the wafer; the movable end of the metal conductive block (3) is provided with an upper groove (301) connected with the metal conductive rod (2), and the metal conductive block (3) can make an incomplete circumferential movement around the metal conductive rod (2).

8. The wafer electroplated flexible conductive impervious support frame of claim 1 wherein, A plurality of placement grooves (502) are arranged in a circumferential array on the annular platform (503), and a lower groove (303) is arranged at a position corresponding to each placement groove (502) of the metal conductive block (3), and the elastic element (7) is arranged in a cavity formed between the placement groove (502) of the annular platform (503) and the lower groove (303) of the metal conductive block (3), and the elastic element (7) is used for supporting the metal conductive block (3).

9. The wafer electroplated flexible conductive impervious support frame of claim 8, wherein, An annular protrusion extension (504) is arranged on the inner circumferential side (501) of the metal support frame (5) in the radial direction, the insulating sealing ring (6) comprises an annular protrusion clamping portion (602), and the protrusion clamping portion (602) of the insulating sealing ring (6) is clamped with the protrusion extension (504) of the metal support frame (5).

10. The wafer electroplated flexible conductive impervious support frame of claim 1 wherein, When the wafer is not pressed down, the highest height of the top protrusion (601) of the insulating sealing ring (6) is higher than the highest height of the metal conductive block (3).

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