Substrate of heat-conducting composite chip

Abstract

The utility model provides a substrate of a heat-conducting composite chip, and solves the problem of poor stability in the prior art. The substrate of the heat-conducting composite chip comprises a diaphragm I and a diaphragm II which are in diaphragm shapes, the diaphragm I is provided with a plurality of through connecting holes I, the diaphragm II is provided with a plurality of through connecting holes II which are in one-to-one correspondence with the connecting holes I, and the diaphragm I is in surface contact with the diaphragm II. The wire penetrates through the first connecting hole and the second connecting hole and enables the first diaphragm and the second diaphragm to be fixedly connected. The substrate of the heat-conducting composite chip is high in stability.

Description

Technical Field

[0001] This utility model belongs to the field of thermal management and relates to a substrate for a thermally conductive composite chip. Background Technology

[0002] With the continuous development of technology, high-power electronic devices are being used more and more widely. At the same time, with the increase in the power of electronic devices, their heat dissipation problem has become more and more prominent.

[0003] To address the aforementioned issues, existing chip substrates typically use ceramic materials. These ceramic materials usually require surface modification treatment to ensure their suitability as chip substrates.

[0004] However, the thermal conductivity of the chip is still determined by the properties of the ceramic material itself, and its effect is limited. To solve the above problems, another existing technology is to use a ceramic-modified composite layered structure substrate. Although this improves the mechanical properties, its structure is too complex, resulting in excessively high costs.

[0005] Chinese Patent Publication No. CN 119241279 A discloses a method for preparing a copper-clad ceramic substrate. The method includes the following steps: (1) coating a metal modification layer on both sides of the ceramic substrate and then performing a sintering treatment; the sintering treatment temperature is 800-900℃; (2) plating a copper layer on the surface of the metal modification layer after the sintering treatment in step (1) and then performing a brazing treatment to obtain the copper-clad ceramic substrate. By coating a metal modification layer on both sides of the ceramic substrate, then performing a sintering treatment, and finally joining the copper layer by brazing, the bonding between the copper layer and the ceramic substrate is made easier to achieve, and the bonding strength between the copper layer and the ceramic substrate is improved; at the same time, by setting the metal modification layer, the stress concentration between the thin copper layer and the ceramic substrate during thermal cycling is effectively reduced, and the reliability of the copper-clad ceramic substrate is improved.

[0006] Chinese patent publication number CN 119136425 A discloses a method for manufacturing a high-precision electroplated ceramic substrate and the ceramic substrate itself, belonging to the field of circuit board manufacturing technology. It solves the problem that ceramic substrates are brittle and easily damaged during production. The method includes: providing a ceramic substrate; pre-treating the ceramic substrate to obtain a substrate with a conductive layer; performing pattern electroplating on the substrate with the conductive layer to obtain a patterned substrate; processing the patterned substrate to obtain a substrate with circuitry; and performing laser forming on the substrate with circuitry to obtain a high-precision electroplated ceramic substrate. This solution improves the manufacturing process of ceramic substrates, thereby increasing production efficiency and product quality.

[0007] It can be seen that both of the above patents involve modifying ceramic materials, and both suffer from poor thermal conductivity and high manufacturing costs. Summary of the Invention

[0008] The purpose of this invention is to address the aforementioned problems in the existing technology by providing a substrate for a thermally conductive composite chip that exhibits good thermal conductivity and high stability.

[0009] The objective of this utility model can be achieved through the following technical solutions:

[0010] A substrate for a thermally conductive composite chip includes a first membrane and a second membrane in the form of a film. The first membrane has a plurality of through-holes, and the second membrane has a plurality of through-holes corresponding to the first and second holes. The first membrane and the second membrane are in contact with each other. The substrate also includes wires that pass through the first and second holes and fix the first and second membranes together.

[0011] In the substrate of the aforementioned thermally conductive composite chip, the first film is a boron nitride thin film.

[0012] In the substrate of the above-mentioned thermally conductive composite chip, the second film is a graphite film.

[0013] In the substrate of the aforementioned thermally conductive composite chip, the thickness of the first film is 20~100μm.

[0014] In the substrate of the aforementioned thermally conductive composite chip, the thickness of the second diaphragm is 20~100μm.

[0015] In the substrate of the aforementioned thermally conductive composite chip, the wire is a number of strands of metal wire wound and woven together.

[0016] In the substrate of the aforementioned thermally conductive composite chip, the wire comprises three metal wires: a silver wire one, a copper wire two, and a titanium wire three. The three metal wires are spirally wrapped and wound to form the aforementioned wire.

[0017] In the substrate of the aforementioned thermally conductive composite chip, the diameter of the first strand is 100~500μm.

[0018] In the substrate of the aforementioned thermally conductive composite chip, the diameter of the second strand is 20~100μm.

[0019] In the substrate of the aforementioned thermally conductive composite chip, the diameter of the third strand is 20~100μm.

[0020] In the substrate of the above-mentioned thermally conductive composite chip, the first film and the second film are contacted and fixed together to form a substrate. The above-mentioned wire forms a connecting line trace one in the longitudinal direction on the substrate, and also includes a connecting line trace two. The angle between the connecting line trace two and the connecting line trace one is 45 degrees.

[0021] Compared with existing technologies, the substrate of this thermally conductive composite chip uses metal wires to not only stably connect film one and film two together, but the metal wires can also improve the heat dissipation effect of the entire substrate.

[0022] Meanwhile, both diaphragm one and diaphragm two are made of non-ceramic materials, which not only have good heat dissipation performance but also relatively high stability, making them highly practical. Attached Figure Description

[0023] Figure 1 This is a top-view schematic diagram of the three-dimensional structure of the substrate of this thermally conductive composite chip.

[0024] Figure 2 This is a three-dimensional structural diagram of the substrate of this thermally conductive composite chip viewed from below.

[0025] Figure 3 This is a cross-sectional view of the wires in the substrate of this thermally conductive composite chip.

[0026] In the diagram, 1 is diaphragm 1; 1a is connection hole 1; 2 is diaphragm 2; 2a is connection hole 2; 3 is wire; 3a is strand 1; 3b is strand 2; and 3c is strand 3. Detailed Implementation

[0027] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] It should be noted that when a component is said to be "mounted on" another component, it can be directly mounted on the other component or may be interspersed with a component. When a component is said to be "set on" another component, it can be directly set on the other component or may be interspersed with a component. When a component is said to be "fixed to" another component, it can be directly fixed to the other component or may be interspersed with a component.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.

[0030] like Figure 1 and Figure 2 and Figure 3 As shown, the substrate of this thermally conductive composite chip includes a membrane 1 and a membrane 2 in the form of a film. The membrane 1 has a plurality of through-holes 1a, and the membrane 2 has a plurality of through-holes 2a corresponding to the through-holes 1a. The membrane 1 and the membrane 2 are in surface contact. The chip also includes a wire 3, which passes through the through-holes 1a and 2a and fixes the membrane 1 and the membrane 2 together.

[0031] The connection hole 1a on diaphragm 1 not only corresponds to the connection hole 2a on diaphragm 2, but the connection hole 1a and the connection hole 2a are the same size.

[0032] After the wire 3 is threaded through multiple connecting holes 1a and 2a, it resembles a fabric sewing structure, thereby stably connecting diaphragm 1 and diaphragm 2 together.

[0033] Under the action of wire 3, diaphragm 1 and diaphragm 2 maintain surface contact, ultimately forming a compact and stable substrate.

[0034] The diaphragm 1 is a boron nitride thin film.

[0035] Boron nitride (BN) is a compound with unique physical and chemical properties. It is composed of two elements, boron (B) and nitrogen (N), and exists in various crystal forms, each with different properties and applications.

[0036] Boron nitride thin films can withstand high temperatures of 900 degrees Celsius. Due to their excellent electrical insulation and high thermal conductivity, they can effectively improve the heat dissipation of substrate materials, ultimately helping to improve the reliability and lifespan of electronic products.

[0037] The second membrane is a graphite membrane.

[0038] Graphite film is a thin film material with graphite as its main component. It is widely used because of its excellent electrical conductivity, thermal conductivity and chemical stability.

[0039] It has an extremely high thermal conductivity, far exceeding that of metallic copper. Furthermore, due to its excellent flexibility and cutability, it can be matched with membranes of various sizes.

[0040] The thickness of the membrane 1 is 20 μm. Depending on the actual situation, a thickness of 60 or 70 μm for the membrane 1 is also feasible.

[0041] The thickness of the second diaphragm is 30 μm. Depending on the actual situation, a thickness of 60 or 70 μm is also feasible.

[0042] The wire 3 is a series of metal wires wound and braided together.

[0043] The wire 3 comprises three metal wires: a silver wire 3a, a copper wire 3b, and a titanium wire 3c. The three metal wires are spirally wrapped together to form the wire 3.

[0044] The diameter of the strand 3a is 100 μm. Depending on the actual situation, the diameter of the strand 3a can also be 200 or 300 μm.

[0045] The diameter of the second strand 3b is 20 μm. Depending on the actual situation, the diameter of the second strand 3b can also be 30 or 50 μm.

[0046] The diameter of the third strand 3c is 40 μm. Depending on the actual situation, the diameter of the third strand 3c can also be 60 or 70 μm.

[0047] After the diaphragm 1 and the diaphragm 2 are fixed together in contact, a substrate is formed. The wire forms a connecting stitch 1 in the longitudinal direction on the substrate, and also includes a connecting stitch 2. The angle between the connecting stitch 2 and the connecting stitch 1 is 45 degrees.

[0048] In this embodiment, after the wire is physically threaded and connected between diaphragm one and diaphragm two, a semi-finished product is obtained. The semi-finished product is treated at 900~1200℃ for 0.5~1.5 hours and cooled to room temperature to finally obtain a high thermal conductivity composite substrate.

[0049] After heat treatment, the wires melt, ultimately ensuring a stable connection between diaphragm one and diaphragm two, and eliminating the protruding structure formed by the wires on the substrate.

[0050] It can be seen that the wire melts at temperatures of 900~1200℃. However, membranes one and two retain their original physical forms.

[0051] The technical features of the above-described embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0052] Those skilled in the art should recognize that the above embodiments are only used to illustrate the present utility model and are not intended to limit the present utility model. Any appropriate changes and variations made to the above embodiments within the scope of the essential spirit of the present utility model shall fall within the scope of protection claimed by the present utility model.

Claims

1. A substrate for a thermally conductive composite chip, characterized by, The diaphragm comprises a diaphragm I and a diaphragm II, the diaphragm I has a plurality of through connecting holes I, the diaphragm II has a plurality of through connecting holes II corresponding to the connecting holes I, the diaphragm I and the diaphragm II are in surface contact, and the diaphragm I and the diaphragm II are fixedly connected by a wire.

2. The thermally conductive composite chip substrate of claim 1, wherein, The diaphragm I is a boron nitride film.

3. The thermally conductive composite chip-on-board substrate of claim 2, wherein, The diaphragm II is a graphite film.

4. The thermally conductive composite chip-on-board substrate of claim 3, wherein, The thickness of the diaphragm I is 20-100 μm.

5. The thermally conductive composite chip-on-board substrate of claim 4, wherein, The thickness of the diaphragm II is 20-100 μm.

6. The thermally conductive composite chip-on-board substrate of claim 5, wherein, The wire is a plurality of twisted metal wires.

7. The thermally conductive composite chip-on-board substrate of claim 6, wherein, The wire comprises three metal wires: a silver wire I, a copper wire II and a titanium wire III, and the three metal wires are spirally wrapped to form the wire.

8. The thermally conductive composite chip-on-board substrate of claim 7, wherein, The diameter of the silver wire I is 100-500 μm.

9. The thermally conductive composite chip-on-board substrate of claim 8, wherein, The diameter of the copper wire II is 20-100 μm.

10. The thermally conductive composite chip-on-board substrate of claim 9, wherein, The diaphragm I and the diaphragm II are in surface contact and fixedly connected to form a base, the wire forms a connecting stitch I on the base along the longitudinal direction, and the base further comprises a connecting stitch II, and the included angle between the connecting stitch II and the connecting stitch I is 45 degrees.

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