IGBT device
By using metal electrode plates and metal connecting bridges in IGBT devices, the problems of insufficient current carrying capacity and heat dissipation performance are solved, and IGBT device designs with high power density and high reliability are realized.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-10
- Publication Date
- 2026-04-07
AI Technical Summary
Existing IGBT devices have limited current carrying capacity and insufficient heat dissipation performance, resulting in reduced reliability, and the metal wire connections are prone to detachment or collapse.
The structure employs metal electrode sheets and metal connecting bridges to increase the electrode connection area, forming a low-resistance current path, and achieving efficient heat dissipation through surface contact connection.
This improves the current carrying capacity and heat dissipation performance of IGBT devices, extends their service life, and enhances their reliability and stability.
Smart Images
Figure CN224098155U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor power device technology, and more specifically, to an IGBT device. Background Technology
[0002] IGBTs (Insulated Gate Bipolar Transistors) are a core power semiconductor device widely used in new energy power generation, electric vehicles, industrial frequency converters, and smart grids. As power electronic systems evolve towards higher power density and higher reliability, the current-carrying capacity and heat dissipation performance of IGBT devices have become key factors restricting their performance upgrades.
[0003] Currently, IGBT modules commonly use wire bonding technology to achieve electrical connections between the chip electrodes and external pins. Due to the small cross-sectional area and high resistance of the bonding wires, the current-carrying capacity of the IGBT device is limited. Furthermore, the contact between the bonding wires and the chip and pins is a point-like or short linear connection, resulting in high thermal resistance and difficulty in quickly dissipating heat. This can easily exacerbate the rise in chip junction temperature, affecting device lifespan. The wires may also detach or collapse, leading to reduced reliability of the IGBT device. Utility Model Content
[0004] The purpose of this invention is to provide an IGBT device that can improve the current carrying capacity and heat dissipation of the device, thereby improving the reliability of the device.
[0005] The embodiments of this utility model are implemented as follows:
[0006] In one aspect, this utility model provides an IGBT device, including a metal base plate, an external connector, and an IGBT chip disposed on the metal base plate. The electrode surface of the IGBT chip is provided with metal electrode sheets. It also includes a metal connecting bridge, which has a first connecting end and a second connecting end connected to each other. The first connecting end is connected to the metal electrode sheets, and the second connecting end is connected to the metal base plate. The end of the external connector is connected to the metal base plate.
[0007] Optionally, the electrode surface of the IGBT chip has a window, and a metal electrode sheet is covered on the window.
[0008] Optionally, the number of windows is at least one, and the metal electrode plates are set corresponding to the windows; when the number of windows is multiple, the multiple windows are arranged side by side along the length direction of the IGBT chip; and the multiple metal electrode plates are respectively set corresponding to the multiple windows.
[0009] Optionally, when there are multiple metal electrode sheets, there are multiple first connection ends of the metal connecting bridge. The multiple first connection ends are arranged sequentially and at intervals along the arrangement direction of multiple windows, and each metal electrode sheet is connected to a corresponding first connection end.
[0010] Optionally, the IGBT chip is provided with a gate, and at least one metal electrode is provided with a relief groove. The relief groove is aligned with the gate, and the gate can be exposed through the relief groove and electrically connected to an external connector.
[0011] Optionally, at least one metal electrode sheet has a limiting hole at its edge, which is used for sintering limiting.
[0012] Optionally, the gate electrode is electrically connected to the external connector via a metal wire.
[0013] Optionally, the limiting hole is an arc-shaped hole.
[0014] Optionally, the external connector has two pins spaced apart for connection to a metal base plate; the IGBT chip is located between the two pins.
[0015] Optionally, there are two external connectors, which are located on opposite sides of the metal base plate.
[0016] The beneficial effects of this utility model include:
[0017] This application provides an IGBT device, including a metal substrate, external connectors, and an IGBT chip disposed on the metal substrate. The electrode surface of the IGBT chip is provided with metal electrode plates. The metal electrode plates increase the connection area of the IGBT chip electrodes, reducing contact resistance compared to traditional bonding wire connections, thus improving current carrying capacity and better handling of large currents. The device also includes a metal connecting bridge with a first connecting end and a second connecting end connected to each other. The first connecting end is connected to the metal electrode plates, and the second connecting end is connected to the metal substrate. The metal connecting bridge provides a low-resistance current path, directly connecting the metal electrode plates of the IGBT chip to the metal substrate. Compared to traditional bonding wires, it has a larger cross-sectional area and lower resistance, significantly improving the current carrying capacity of the IGBT device and meeting high power density requirements. Furthermore, the metal connecting bridge achieves surface contact connection between the chip and the metal substrate, greatly reducing thermal resistance compared to traditional point or short linear connections. This facilitates rapid heat conduction from the chip to the metal substrate, which then dissipates the heat, effectively reducing the chip junction temperature, improving the device's heat dissipation performance, and extending the device's lifespan. The end of the external connector connects to the metal base plate, forming a complete electrical circuit. The aforementioned IGBT device improves the device's current carrying capacity and heat dissipation, thereby enhancing its reliability. Attached Figure Description
[0018] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 One of the structural schematic diagrams of the IGBT device provided in the embodiments of this utility model;
[0020] Figure 2 This is the second schematic diagram of the structure of the IGBT device provided in the embodiment of this utility model;
[0021] Figure 3 This is a schematic diagram of the structure of the IGBT chip of the IGBT device provided in the embodiment of this utility model.
[0022] Icons: 100-IGBT device; 110-metal base plate; 120-external connector; 121-pin; 130-IGBT chip; 131-gate; 140-ceramic copper-clad laminate; 150-metal electrode sheet; 151-clearance groove; 152-limiting hole; 160-metal connecting bridge; 161-first connection terminal; 162-second connection terminal; 170-metal wire; a-length direction. Detailed Implementation
[0023] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0024] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0025] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0026] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0027] Please refer to Figure 1 This embodiment provides an IGBT device 100, including a metal base plate 110, an external connector 120, and an IGBT chip 130 disposed on the metal base plate 110. The electrode surface of the IGBT chip 130 is provided with metal electrode sheets 150. It also includes a metal connecting bridge 160, which has a first connecting end 161 and a second connecting end 162 connected to each other. The first connecting end 161 is connected to the metal electrode sheet 150, and the second connecting end 162 is connected to the metal base plate 110. The end of the external connector 120 is connected to the metal base plate 110.
[0028] Specifically, such as Figure 1 As shown, the IGBT device 100 includes a metal base plate 110, which serves as the fundamental support component for the entire IGBT device. The metal base plate 110 is preferably made of a metal material with good thermal conductivity and mechanical strength, such as copper or aluminum alloys. On one hand, the metal base plate 110 provides a stable mounting platform for the IGBT chip, ensuring that the IGBT chip 130 will not shift or be damaged under various operating conditions, thus guaranteeing the stability of the overall device structure. On the other hand, the metal base plate 110 can quickly absorb the large amount of heat generated by the IGBT chip during operation and transfer this heat to the surrounding environment, thereby effectively reducing the chip's operating temperature and improving its reliability and lifespan.
[0029] like Figure 1As shown, a ceramic copper-clad laminate 140 is disposed on the surface of a metal substrate 110, and an IGBT chip 130 is disposed on the ceramic copper-clad laminate 140. The IGBT chip is responsible for power conversion and control functions. In existing IGBT chips, the electrodes are typically directly connected to external connectors via bonding wires. However, in this application, a metal electrode sheet 150 is disposed on the electrode surface. Preferably, the metal electrode sheet 150 is made of a metal material with good compatibility with the chip electrodes and excellent conductivity, such as gold or silver. The area of the metal electrode sheet 150 is much larger than the connection point between the traditional bonding wire and the chip electrode, and the increased connection area can significantly reduce contact resistance. Lower contact resistance helps improve the current flow capacity of the chip electrode, enabling the IGBT device to withstand larger currents and meet the needs of high power density applications. Secondly, the metal electrode sheet 150 can better disperse the current, reducing the potential for localized overheating caused by current concentration at small contact points, further improving the stability and reliability of the chip operation.
[0030] The metal electrode 150 can be electrically connected to the external connector 120 via the metal connecting bridge 160. Preferably, the metal connecting bridge 160 is made of a metal material with high conductivity and good mechanical properties, such as a copper alloy. The first connection end 161 of the metal connecting bridge 160 is connected to the metal electrode 150, and the second connection end 162 is connected to the metal base plate 110, forming a low-resistance electrical path from the IGBT chip electrode to the metal base plate 110.
[0031] Compared to existing wire bonding technologies, the cross-sectional area of the metal connecting bridge 160 in the IGBT device 100 provided in this application is much larger. Traditional bonding wires, due to their thinness and length, have relatively high resistance, limiting the current-carrying capacity of the IGBT device. However, the metal connecting bridge 160, with its larger cross-sectional area, significantly reduces resistance according to the resistance calculation formula. This allows current to flow more smoothly from the chip electrodes through the metal connecting bridge 160 to the metal substrate 110, significantly improving the current-carrying capacity of the IGBT device. In high-power applications, such as electric vehicle drive systems and high-power industrial frequency converters, IGBT devices need to handle large currents. This low-resistance electrical connection method of the metal connecting bridge 160 ensures stable operation of the IGBT device under these high-current conditions, reducing device overheating and performance degradation caused by excessive current.
[0032] Besides electrical connectivity, the metal bridge 160 also plays a crucial role in heat conduction. Due to its large-area connection to both the metal electrode 150 and the metal base plate 110, the thermal resistance is significantly reduced compared to the point-like or short linear connections between traditional bonding wires and the chip and pins 121. When the IGBT chip generates heat during operation, the heat can be rapidly transferred through the metal electrode 150 to the metal bridge 160, and then efficiently conducted to the metal base plate 110. The metal base plate 110 then dissipates the heat into the surrounding environment. This efficient heat conduction path rapidly reduces the chip's junction temperature. Through the excellent heat conduction of the metal bridge 160, the chip junction temperature can be effectively reduced, extending the lifespan of the IGBT device and improving its reliability.
[0033] Furthermore, the metal bridge 160 exhibits superior structural stability compared to traditional metal wire bonding 170. During IGBT operation, especially in high-frequency switching conditions, the metal wire 170 may detach or collapse due to mechanical vibration, thermal stress, or other factors, leading to electrical connection failure. The metal bridge 160, with its robust structural design, better resists these external factors, ensuring reliable electrical connections. Even in harsh operating environments, such as high-temperature, high-humidity, or strongly vibrating industrial environments, the metal bridge 160 maintains a stable connection, ensuring normal IGBT operation and improving the reliability and stability of the entire power electronic system.
[0034] It should be noted that, in one possible implementation of this application, firstly, as... Figure 2 As shown, the external connector 120 has two pins 121, which are spaced apart and can be vacuum-welded to the metal base plate 110 via solder pads. Compared to a single pin 121 connection, the arrangement of two pins 121 can form a more robust electrical connection structure and mechanical stability. The IGBT chip 130 is located between the two pins 121, making the overall structure of the IGBT device more compact and facilitating the miniaturization of the IGBT device 100.
[0035] Second, such as Figure 2 As shown, there are two external connectors 120, which are located on opposite sides of the metal base plate 110. The use of two external connectors 120 provides a redundancy mechanism for the electrical connection of the IGBT device, further improving the reliability of the IGBT device 100.
[0036] The aforementioned IGBT device 100 includes a metal base plate 110, an external connector 120, and an IGBT chip 130 disposed on the metal base plate 110. The electrode surface of the IGBT chip 130 is provided with metal electrode plates 150. The metal electrode plates 150 increase the connection area of the IGBT chip 130 electrodes, reducing contact resistance compared to traditional bonding wire connections, thus improving current carrying capacity and better handling of large currents. It also includes a metal connecting bridge 160, which has a first connecting end 161 and a second connecting end 162 connected to each other. The first connecting end 161 is connected to the metal electrode plate 150, and the second connecting end 162 is connected to the metal base plate 110. The metal connecting bridge 160 provides a low-resistance current path, directly connecting the metal electrode plate 150 of the IGBT chip to the metal base plate 110. Compared to traditional bonding wires, it has a larger cross-sectional area and lower resistance, which significantly improves the current-carrying capacity of IGBT devices and meets the requirements of high power density. Furthermore, the metal connecting bridge 160 achieves surface contact connection between the chip and the metal base plate 110, greatly reducing thermal resistance compared to traditional point or short linear connections. This facilitates the rapid conduction of heat generated by the chip to the metal base plate 110, which then dissipates the heat, effectively reducing the chip junction temperature, improving the device's heat dissipation performance, and extending its lifespan. The end of the external connector 120 connects to the metal base plate 110, forming a complete electrical circuit. The aforementioned IGBT device 100 improves the device's current-carrying capacity and heat dissipation, enhancing its reliability.
[0037] In one possible implementation of this application, such as Figure 3 As shown, the electrode surface of the IGBT chip 130 has a window, and the metal electrode sheet 150 is covered on the window.
[0038] Specifically, the window provides a specific area for the subsequent connection of the metal electrode sheet 150, making the connection between the metal electrode sheet 150 and the chip electrode more precise and stable. Compared to connecting directly on a flat electrode surface, the window can play a positioning and limiting role, ensuring that the metal electrode sheet 150 can accurately cover the area to be connected, reducing deviations and uncertainties in the connection process.
[0039] Meanwhile, the window design alters the structure of the chip electrode surface, increasing the contact area between the chip electrodes and the surrounding environment. When the IGBT chip generates heat during operation, the larger contact area facilitates heat dissipation. Heat can be transferred more quickly through the sidewalls of the window to the metal electrode plate 150, and then through the metal electrode plate 150 to the metal connecting bridge 160 and the metal base plate 110, ultimately dissipating into the surrounding environment. This effectively reduces the chip's junction temperature, improving chip reliability and lifespan.
[0040] It should be noted that this application does not impose any limitations on the specific shape and structure of the window, as long as the shape of the window matches the shape of the metal electrode sheet 150. Preferably, the window has a rectangular structure.
[0041] For example, such as Figure 3 As shown, there is at least one window, and the metal electrode 150 is set corresponding to the window; when there are multiple windows, the multiple windows are arranged side by side along the length direction a of the IGBT chip 130; the multiple metal electrode 150 are respectively set corresponding to the multiple windows.
[0042] Specifically, this application does not impose any limit on the number of windows; the specific number of windows can be adjusted according to the type of IGBT chip 130, etc. The number of windows corresponds one-to-one with the number of metal electrode pieces 150, and each window is provided with one metal electrode piece 150.
[0043] When there are multiple windows, the multiple windows are arranged side by side along the length direction a of the IGBT chip 130, which helps to achieve a uniform distribution of current and heat.
[0044] For example, when there are multiple metal electrode pieces 150, there are multiple first connection ends 161 of the metal connecting bridge 160. The multiple first connection ends 161 are arranged sequentially at intervals along the arrangement direction of multiple windows, and each metal electrode piece 150 is connected to a corresponding first connection end 161.
[0045] Multiple metal electrode plates 150 represent a larger current conduction area. When the IGBT chip is operating, current is conducted from the chip electrodes through the metal electrode plates 150. Multiple metal electrode plates 150 can conduct current in parallel; due to the characteristics of parallel circuits, the total resistance decreases, and the total current carrying capacity increases. This allows IGBT devices to adapt to higher power applications, such as high-power industrial motor drives and high-voltage direct current transmission. Multiple metal electrode plates 150 ensure stable and efficient transmission of large currents, reducing heat generation and losses caused by excessive current.
[0046] like Figure 2 As shown, multiple first connection terminals 161 are arranged at intervals along the window orientation, allowing the current to be distributed more evenly across the metal bridge 160. When current is conducted from the multiple metal electrode plates 150 to the metal bridge 160, the spaced-out first connection terminals 161 prevent current concentration in a certain area, reducing local overheating and increased resistance. This helps improve the current conduction efficiency of the metal bridge 160, reduces power loss, and ensures stable operation of the IGBT device under high current density.
[0047] Multiple spaced-apart first connection terminals 161 connect to the metal electrode sheet 150, providing more stable support for the metal connecting bridge 160. During the operation of the IGBT device, it is affected by factors such as mechanical vibration and thermal stress. The design of multiple first connection terminals 161 can disperse these external forces, reduce the risk of deformation or damage to the metal connecting bridge 160 due to uneven stress, and improve the mechanical stability and reliability of the entire device.
[0048] In one possible implementation of this application, such as Figure 3 As shown, the IGBT chip 130 is provided with a gate 131, and at least one metal electrode plate 150 is provided with a relief groove 151. The relief groove 151 is aligned with the gate 131, and the gate 131 can be exposed through the relief groove 151 and electrically connected to the external connector 120.
[0049] The gate 131 is a key component for the IGBT chip to achieve its switching function. As a voltage-controlled power semiconductor device, the IGBT chip's on and off states can be precisely controlled by applying an appropriate voltage signal to the gate 131. When a positive voltage is applied to the gate 131 and reaches a certain threshold, the IGBT chip turns on, allowing current to flow from the collector to the emitter; when the gate 131 voltage is below the threshold, the IGBT chip turns off, blocking current flow. The gate 131 configuration brings greater flexibility and controllability to power electronic systems. By changing parameters such as the magnitude of the gate 131 voltage, pulse width, and frequency, the on and off times of the IGBT can be flexibly adjusted, thereby precisely controlling the current and voltage in the circuit.
[0050] To avoid interference between the metal electrode plate and the gate electrode 131, the metal electrode plate 150 is provided with a clearance groove 151, through which the gate electrode 131 can be exposed. This application does not impose any restrictions on the structure of the clearance groove 151; preferably, the clearance groove 151 is an open slot to facilitate the connection between the gate electrode 131 and the external connector 120. Figure 3 As shown, in one specific embodiment of this application, the clearance groove 151 has a trapezoidal structure.
[0051] Optionally, such as Figure 2 As shown, the gate 131 and the external connector 120 can be electrically connected via the metal wire 170.
[0052] For example, such as Figure 3 As shown, at least one metal electrode sheet 150 has a limiting hole 152 on its edge, which is used for sintering limiting.
[0053] In IGBT chip manufacturing, the sintering process is a crucial step in achieving a good electrical and mechanical connection between the metal electrode sheet 150 and the chip electrode. The limiting hole 152 allows for sintering positioning with the sintering mold, ensuring the reliability and accuracy of the metal electrode sheet 150's sintering and preventing a decrease in the reliability of the IGBT chip 130 due to inaccurate sintering positioning.
[0054] Optionally, the limiting hole 152 is an arc-shaped hole to facilitate the limiting assembly process and ensure assembly reliability.
[0055] The above description is merely an optional embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.
[0056] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable way without contradiction. In order to avoid unnecessary repetition, this utility model will not describe the various possible combinations separately.
Claims
1. An IGBT device, characterized in that, The device includes a metal base plate, an external connector, and an IGBT chip disposed on the metal base plate. The electrode surface of the IGBT chip is provided with metal electrode sheets. It also includes a metal connecting bridge, which has a first connecting end and a second connecting end connected to each other. The first connecting end is connected to the metal electrode sheets, and the second connecting end is connected to the metal base plate. The end of the external connector is connected to the metal base plate.
2. The IGBT device according to claim 1, characterized in that, The IGBT chip has a window on its electrode surface, and the metal electrode sheet is covered by the window.
3. The IGBT device according to claim 2, characterized in that, The number of windows is at least one, and the metal electrode sheet is disposed corresponding to the window; when the number of windows is multiple, the multiple windows are arranged side by side in sequence along the length direction of the IGBT chip; the multiple metal electrode sheets are disposed corresponding to the multiple windows respectively.
4. The IGBT device according to claim 3, characterized in that, When there are multiple metal electrode sheets, there are multiple first connection ends of the metal connecting bridge. The multiple first connection ends are arranged at intervals along the arrangement direction of the multiple windows, and each metal electrode sheet is connected to one first connection end.
5. The IGBT device according to claim 3, characterized in that, The IGBT chip has a gate electrode, and at least one of the metal electrode plates has a clearance groove. The clearance groove is aligned with the gate electrode, and the gate electrode can be exposed through the clearance groove and electrically connected to the external connector.
6. The IGBT device according to claim 3, characterized in that, At least one of the metal electrode sheets has a limiting hole on its edge, the limiting hole being used for sintering limiting.
7. The IGBT device according to claim 5, characterized in that, The gate electrode and the external connector are electrically connected via a metal wire.
8. The IGBT device according to claim 6, characterized in that, The limiting hole is an arc-shaped hole.
9. The IGBT device according to claim 1, characterized in that, The external connector has two pins, which are spaced apart to connect to the metal base plate respectively; the IGBT chip is located between the two pins.
10. The IGBT device according to claim 9, characterized in that, The number of external connectors is two, and the two external connectors are located on opposite sides of the metal base plate.