Production device for PVD (Physical Vapor Deposition) air exhaust and battery production line

By introducing a combination of multiple mechanical pumps and molecular pumps into the solar cell production equipment, the limitations of a single mechanical pump in the intermediate chamber were solved, enabling rapid vacuuming and high vacuum levels, thereby improving production efficiency and thin film quality.

CN224160675UActive Publication Date: 2026-04-24DALI HUASHENG NEW ENERGY TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
DALI HUASHENG NEW ENERGY TECHNOLOGY CO LTD
Filing Date
2025-05-28
Publication Date
2026-04-24

AI Technical Summary

Technical Problem

In existing solar cell production equipment, the intermediate chamber is limited by a single mechanical pump, which affects the overall vacuuming speed and results in low production efficiency.

Method used

The design includes two transition chambers, a reaction chamber assembly, first to third mechanical pumps, and a molecular pump assembly. Through the combination of gas paths and valves, the three mechanical pumps simultaneously evacuate the vacuum, and work in conjunction with the molecular pump to achieve a high vacuum level, which meets the requirements for thin film deposition.

Benefits of technology

The increased vacuuming speed improved the utilization efficiency of the production line, ensured the quality and uniformity of thin film deposition, and met the high vacuum environment requirements for solar cell production.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a production device for PVD (Physical Vapor Deposition) air exhaust and a battery production line, and relates to the technical field of solar battery production equipment. Comprising two transition chambers, a reaction chamber assembly, a first mechanical pump, a second mechanical pump, a third mechanical pump and a molecular pump assembly, a reaction chamber assembly is arranged between the two transition chambers, the first mechanical pump is communicated with one transition chamber and the reaction chamber assembly through a gas path, and the second mechanical pump is communicated with the other transition chamber and the reaction chamber assembly through a gas path; the reaction chamber assembly is communicated with a third mechanical pump through a gas path, and is connected with a molecular pump assembly through a pipeline. According to the production device for PVD air exhaust, the technical problem that in the prior art, a plurality of cavities in the middle are limited by a single mechanical pump, and the overall vacuumizing speed is affected is solved, and the technical effect of rapid air exhaust is achieved.
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Description

Technical Field

[0001] This utility model relates to the field of solar cell production equipment technology, and more specifically, to a production device and battery production line for PVD gas extraction. Background Technology

[0002] A crucial step in solar cell production is the deposition of a transparent conductive thin film, typically achieved using PVD (Physical Vapor Deposition). Magnetron sputtering is a technique that uses high-energy ions to bombard a target material in a vacuum environment, causing the target's atoms or molecules to sputter out and deposit onto a substrate to form a thin film. To ensure the quality and uniformity of the film, this process must be carried out in a highly vacuum chamber. Therefore, each chamber on a solar cell production line requires rigorous vacuuming operations.

[0003] However, the intermediate chamber in the production unit typically uses a mechanical pump to evacuate the air to a certain pressure before activating a molecular pump to remove the air. In contrast, the chambers at the ends of the production line are only connected to their own mechanical pumps and do not participate in the vacuuming process of the intermediate chamber.

[0004] While existing devices can achieve the required vacuum level in the intermediate chamber, the intermediate chamber requires a certain amount of time to change its temperature in addition to evacuation. Therefore, the evacuation rate needs to be as fast as possible. However, the multiple intermediate chambers are limited by a single mechanical pump, which affects the overall evacuation speed. Utility Model Content

[0005] The purpose of this invention is to provide a production device and battery production line for PVD vacuuming, so as to alleviate the technical problem that the multiple chambers in the middle of the existing technology are limited by a single mechanical pump, which affects the overall vacuuming speed.

[0006] This invention provides a production apparatus for PVD gas extraction, comprising two transition chambers, a reaction chamber assembly, a first mechanical pump, a second mechanical pump, a third mechanical pump, and a molecular pump assembly; the reaction chamber assembly is arranged between the two transition chambers; the first mechanical pump is connected to one transition chamber and the reaction chamber assembly via a gas path; the second mechanical pump is connected to the other transition chamber and the reaction chamber assembly via a gas path; the reaction chamber assembly is connected to the third mechanical pump via a gas path; and the reaction chamber assembly is connected to the molecular pump assembly via a pipeline.

[0007] Furthermore, a first valve is provided in the air passage between the first mechanical pump and a transition chamber connected to the first mechanical pump; a second valve is provided in the air passage between the second mechanical pump and another transition chamber connected to the second mechanical pump.

[0008] A third valve is installed in the gas line between the reaction chamber assembly and the third mechanical pump; a fourth valve is installed in the gas line connecting the third mechanical pump and the first mechanical pump; and a fifth valve is installed in the gas line connecting the third mechanical pump and the second mechanical pump.

[0009] Furthermore, the reaction chamber assembly includes a preheating chamber, a thin film deposition chamber, and a cooling chamber arranged sequentially; each of the preheating chamber, the thin film deposition chamber, and the cooling chamber has two through holes on its wall, one of which is connected to the third mechanical pump via a gas path, and the other of which is connected to the molecular pump assembly via a pipe;

[0010] Furthermore, a molecular pump valve is provided on the pipes connecting the preheating chamber, the thin film deposition chamber, and the cooling chamber to the corresponding molecular pump assembly;

[0011] Furthermore, a chamber valve is installed on the gas path connecting the preheating chamber, the thin film deposition chamber, and the cooling chamber to the third mechanical pump;

[0012] Furthermore, a heater is installed at the bottom of the preheating chamber, and cooling pipes are laid at the bottom of the cooling chamber;

[0013] Furthermore, the thin film deposition chamber is provided with a substrate holder and a target material that are opposite each other;

[0014] Furthermore, pressure sensors are installed inside both transition chambers and the reaction chamber assembly;

[0015] Furthermore, the interiors of both transition chambers and the reaction chamber assembly are lined with an anti-corrosion coating;

[0016] This utility model also provides a battery production line, including the above-mentioned production device for PVD degassing.

[0017] Beneficial effects:

[0018] This utility model provides a production device for PVD gas extraction, which is applied to a battery production line. It includes a reaction chamber assembly arranged between two transition chambers. The transition chambers serve as chambers for exchanging with the outside world, and multiple chambers are arranged in the middle to meet the temperature and production requirements for transparent conductive film deposition.

[0019] The first mechanical pump is connected to a transition chamber and a reaction chamber assembly via a gas path. The second mechanical pump is connected to another transition chamber and a reaction chamber assembly via a gas path. The reaction chamber assembly is connected to a third mechanical pump via a gas path. By connecting the three mechanical pumps to the reaction chamber assembly, the reaction chamber assembly can be evacuated simultaneously without adding any other equipment, thus accelerating the evacuation process. The reaction chamber assembly is connected to a molecular pump assembly via a pipe, which can evacuate the gas pressure in the reaction chamber assembly to 10. -4Pa or lower, to meet the requirements of thin film deposition.

[0020] This invention makes full use of existing mechanical pumps to shorten the time for vacuuming the chamber, thereby improving the utilization efficiency of the production line. Attached Figure Description

[0021] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of a production device for PVD air extraction provided in an embodiment of the present invention;

[0023] Figure 2 A schematic diagram of the preheating chamber in the production apparatus provided in this embodiment of the utility model;

[0024] Figure 3 A schematic diagram of the structure of the cooling chamber in the production apparatus provided in this embodiment of the utility model;

[0025] Figure 4 for Figure 3 This is a schematic diagram of the thin film deposition chamber in the production apparatus provided in this embodiment of the utility model.

[0026] Icon: 100 - Transition chamber;

[0027] 200 – Reaction chamber assembly; 201 – Preheating chamber; 202 – Thin film deposition chamber; 203 – Cooling chamber; 204 – Heater; 205 – Cooling pipe; 206 – Substrate holder; 207 – Target material;

[0028] 300 – First mechanical pump; 301 – First valve;

[0029] 400 – Second mechanical pump; 401 – Second valve;

[0030] 500 – Third mechanical pump; 501 – Third valve; 502 – Fourth valve; 503 – Fifth valve; 504 – Chamber valve;

[0031] 600 - Molecular pump assembly;

[0032] 700 - Molecular pump valve. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0034] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0035] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0036] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0037] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," not that the structure must be completely horizontal, but can be slightly tilted.

[0038] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0039] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings.

[0040] like Figure 1 As shown, this embodiment provides a production apparatus for PVD gas extraction, including: two transition chambers 100, a reaction chamber assembly 200, a first mechanical pump 300, a second mechanical pump 400, a third mechanical pump 500, and a molecular pump assembly 600.

[0041] Two transition chambers 100 are located on both sides of the reaction chamber assembly 200, namely the pre-deposition transition chamber and the post-deposition transition chamber. Silicon wafers are sequentially placed into the chambers, with the transition chambers serving as the chambers for exchange with the outside environment. Multiple chambers are arranged in between to meet the production requirements of thin film deposition.

[0042] The first mechanical pump 300 connects to the air passage... Figure 1 The transition chamber 100 on the left side is connected to the reaction chamber assembly 200, while the second mechanical pump 400 is connected to the reaction chamber assembly 200 via another gas path. Figure 1 The transition chamber 100 on the right side is connected to the reaction chamber assembly 200, and the reaction chamber assembly 200 is also connected to the third mechanical pump 500 through a gas path. By connecting all three mechanical pumps to the reaction chamber assembly 200, the first mechanical pump 300 and the second mechanical pump 400, which evacuate the transition chamber 100, can work together with the third mechanical pump 500 to quickly evacuate the reaction chamber assembly 200 without adding other evacuation equipment or increasing costs, thus accelerating the evacuation speed.

[0043] Furthermore, the reaction chamber assembly 200 is directly connected to the molecular pump assembly 600 via piping to achieve a higher level of vacuum, meeting the stringent requirements for a high-vacuum environment in the PVD process. This not only improves vacuuming efficiency but also ensures stability and consistent film quality during production by precisely controlling the pressure in each chamber through valves.

[0044] In an embodiment of this invention, a first mechanical pump 300 is connected to a pre-deposition transition chamber 100 via an air passage, and a first valve 301 is provided in the air passage between them to control the on / off connection between the first mechanical pump 300 and the transition chamber 100. A second mechanical pump 400 is also connected to a post-deposition transition chamber 100 via an air passage, and a second valve 401 is provided in the air passage between them to adjust the on / off connection between the second mechanical pump 400 and the transition chamber 100.

[0045] A third valve 501 is installed in the gas path between the reaction chamber assembly 200 and the third mechanical pump 500 to adjust the vacuuming speed and intensity of the reaction chamber assembly 200 as needed. The third mechanical pump 500 is also connected to the first mechanical pump 300 via a gas path, and a fourth valve 502 is installed in this gas path to control the on / off state between the two pumps. Similarly, a fifth valve 503 is installed in the gas path between the third mechanical pump 500 and the second mechanical pump 400.

[0046] The production process consists of three stages, with the solar cells placed in the pre-deposition chamber, the reaction chamber assembly 200, and the post-deposition chamber, respectively.

[0047] The solar cells are placed in the pre-deposition chamber of the transition chamber 100. The first valve 301 is opened while the fourth valve 502 is closed to ensure that only the pre-deposition transition chamber 100 is vacuumed.

[0048] The solar cells are transferred to the reaction chamber assembly 200 for preheating, coating, and cooling. At this time, the first valve 301 and the second valve 401 are closed, the chamber valve 504 is opened, and the first mechanical pump 300, the second mechanical pump 400, and the third mechanical pump 500 are started. The three pumps simultaneously draw a vacuum, increasing the pumping rate.

[0049] The solar cells are moved to the post-deposition chamber of the transition chamber 100. The second valve 401 is opened while the fifth valve 503 is closed, and the post-deposition transition chamber 100 is vacuumed.

[0050] Multiple valves and mechanical pumps work together to allow independent control of each chamber at different production stages. In addition, the mechanical pumps at both ends are connected to the pipeline of the reaction chamber assembly 200, and a valve is installed in the middle. After the valve is opened, the first mechanical pump 300 and the second mechanical pump 400 at both ends participate in the vacuuming of the reaction chamber assembly 200, thereby accelerating the vacuuming rate of the reaction chamber assembly 200.

[0051] It should be noted that the first valve 301, the second valve 401, the third valve 501, the fourth valve 502, and the fifth valve 503 can be any one of a regulating valve, a ball valve, a butterfly valve, or a gate valve, in order to effectively control the gas in the gas circuit.

[0052] In an embodiment of this invention, the reaction chamber assembly 200 includes a preheating chamber 201, a thin film deposition chamber 202, and a cooling chamber 203 arranged sequentially; the three chambers can complete the process from preheating and thin film deposition to cooling, while ensuring that the expected vacuum environment is achieved at each stage.

[0053] Each of the three chambers has two through holes, which are connected to the third mechanical pump 500 via a gas path. This allows the preheating chamber 201, the thin film deposition chamber 202, and the cooling chamber 203 to be connected to the third mechanical pump 500, enabling preliminary evacuation of each chamber to prepare for the subsequent high vacuum environment.

[0054] Another through hole on the preheating chamber 201, the thin film deposition chamber 202, and the cooling chamber 203 is directly connected to the molecular pump assembly 600 through a pipe. The molecular pump assembly 600 performs high vacuum extraction to achieve a lower vacuum level.

[0055] It should be noted that the molecular pump assembly 600 includes three independent molecular pumps: one molecular pump is connected to the through hole on the preheating chamber 201 through a pipe, one molecular pump is connected to the through hole on the thin film deposition chamber 202 through a pipe, and one molecular pump is connected to the through hole on the cooling chamber 203 through a pipe.

[0056] To more precisely control the gas flow between the molecular pump assembly 600 and each chamber, a molecular pump valve 700 is added, allowing the operator to finely adjust the pumping rate and timing of the molecular pump, thereby precisely controlling the vacuum level required for each chamber at different stages.

[0057] It should be noted that each molecular pump valve 700 is respectively installed on the pipe connecting the molecular pump assembly 600 to the preheating chamber 201, the thin film deposition chamber 202, and the cooling chamber 203. These valves, in conjunction with the molecular pump assembly 600, ensure vacuum control of each chamber.

[0058] In an embodiment of this utility model, a chamber valve 504 is provided on the gas path connecting the preheating chamber 201, the thin film deposition chamber 202, and the cooling chamber 203 to the third mechanical pump 500.

[0059] It should be noted that, in order to control the gas flow, a chamber valve 504 is provided on the gas path connecting the preheating chamber 201, the thin film deposition chamber 202, and the cooling chamber 203 to the third mechanical pump 500. The pumping action of the third mechanical pump 500 can be adjusted through the chamber valve 504 according to the specific needs of each stage of preheating, deposition, and cooling.

[0060] like Figure 2 , Figure 3 As shown, in an embodiment of this utility model, a heater 204 is provided at the bottom of the preheating chamber 201, and a cooling pipe 205 is laid at the bottom of the cooling chamber 203. The heater 204 and the cooling pipe 205 are both laid at the bottom of the chamber, used to preheat the substrate before thin film deposition and to cool the substrate after the deposition process.

[0061] like Figure 4 As shown, a substrate holder 206 and a target 207 are disposed opposite each other inside the thin film deposition chamber 202. The substrate holder 206 is used to fix and support the substrate, ensuring that the substrate is in the proper position during sputtering to receive atoms or molecules sputtered from the target 207 disposed on opposite sides, forming a uniform thin film.

[0062] Pressure sensors are installed inside both transition chambers 100 and the reaction chamber assembly 200 to monitor the pressure level in each chamber in real time, thereby controlling the opening and closing of the valves to achieve the required vacuum.

[0063] The interiors of the two transition chambers 100 and the reaction chamber assembly 200 are all lined with anti-corrosion coatings to prevent chemical corrosion inside the chambers and extend the service life of the equipment.

[0064] This utility model also provides a battery production line, including the above-mentioned production device for PVD degassing, forming a complete solar cell production line.

[0065] Based on the above embodiments, the working process of the high-altitude transmission line provided by this utility model embodiment is as follows:

[0066] The solar cell is placed in the pre-deposition chamber of the transition chamber 100. The first mechanical pump 300 is started and the first valve 301 is opened, while the fourth valve 502 is closed, ensuring that only the pre-deposition transition chamber 100 is vacuumed, creating a preliminary vacuum environment to lay the foundation for subsequent thin film deposition.

[0067] The solar cells are transferred to the reaction chamber assembly 200 for preheating, coating, and cooling. At this time, the first valve 301 and the second valve 401 are closed, the chamber valve 504 is opened, and the first mechanical pump 300, the second mechanical pump 400, and the third mechanical pump 500 are started for further vacuuming. All three pumps simultaneously evacuate the vacuum, increasing the evacuation rate. When the gas pressure drops to an appropriate level, the molecular pump assembly 600 and the molecular pump valve 700 are opened, reducing the gas pressure to 10⁻⁴ Pa, providing the necessary high-vacuum environment for thin film deposition.

[0068] After coating is completed, the solar cells are moved to the post-deposition chamber of the transition chamber 100. The second mechanical pump 400 is started, the second valve 401 is opened, and the fifth valve 503 is closed to perform vacuum extraction of the post-deposition transition chamber 100. This ensures that the solar cells reach the required cleanliness and vacuum level before leaving the PVD system, preparing them for further use or packaging.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A production apparatus for PVD gas extraction, characterized in that, include: Two transition chambers (100), a reaction chamber assembly (200), a first mechanical pump (300), a second mechanical pump (400), a third mechanical pump (500), and a molecular pump assembly (600); The reaction chamber assembly (200) is arranged between the two transition chambers (100). The first mechanical pump (300) is connected to one of the transition chambers (100) and the reaction chamber assembly (200) via a gas path. The second mechanical pump (400) is connected to the other transition chamber (100) and the reaction chamber assembly (200) via a gas path. The reaction chamber assembly (200) is connected to the third mechanical pump (500) via a gas path. The reaction chamber assembly (200) is connected to the molecular pump assembly (600) via a pipe.

2. The production apparatus for PVD degassing according to claim 1, characterized in that, A first valve (301) is provided in the air passage between the first mechanical pump (300) and one of the transition chambers (100); a second valve (401) is provided in the air passage between the second mechanical pump (400) and another of the transition chambers (100) and the second mechanical pump (400). A third valve (501) is provided in the gas path between the reaction chamber assembly (200) and the third mechanical pump (500); a fourth valve (502) is provided in the gas path connecting the third mechanical pump (500) and the first mechanical pump (300); and a fifth valve (503) is provided in the gas path connecting the third mechanical pump (500) and the second mechanical pump (400).

3. The production apparatus for PVD degassing according to claim 1, characterized in that, The reaction chamber assembly (200) includes a preheating chamber (201), a thin film deposition chamber (202), and a cooling chamber (203) arranged in sequence; each of the preheating chamber (201), the thin film deposition chamber (202), and the cooling chamber (203) has two through holes on its walls, one of which is connected to the third mechanical pump (500) through a gas passage, and the other of which is connected to the molecular pump assembly (600) through a pipe.

4. The production apparatus for PVD degassing according to claim 3, characterized in that, A molecular pump valve (700) is provided on the pipe connecting the preheating chamber (201), the thin film deposition chamber (202), and the cooling chamber (203) to the corresponding molecular pump assembly (600).

5. The production apparatus for PVD degassing according to claim 3, characterized in that, A chamber valve (504) is provided on the gas path connecting the preheating chamber (201), the thin film deposition chamber (202), and the cooling chamber (203) to the third mechanical pump (500).

6. The production apparatus for PVD degassing according to claim 3, characterized in that, The preheating chamber (201) is equipped with a heater (204) at the bottom, and the cooling chamber (203) is equipped with a cooling pipe (205) at the bottom.

7. The production apparatus for PVD degassing according to claim 3, characterized in that, The thin film deposition chamber (202) is provided with a substrate holder (206) and a target material (207) facing each other.

8. The production apparatus for PVD degassing according to claim 1, characterized in that, Pressure sensors are provided inside both transition chambers (100) and the reaction chamber assembly (200).

9. The production apparatus for PVD degassing according to claim 1, characterized in that, The interiors of both transition chambers (100) and the reaction chamber assembly (200) are lined with an anti-corrosion coating.

10. A battery production line, characterized in that, Includes the production apparatus for PVD degassing as described in any one of claims 1-9.