Sputtering cathode and magnetron sputtering device

Abstract

The utility model provides a sputtering cathode and a magnetron sputtering device, the sputtering cathode is used for forming a deposition film on the surface of a substrate, the sputtering cathode comprises a reaction cavity, a deposition channel and a magnet group, the reaction cavity is provided with a first opening, and the inner wall of the reaction cavity is provided with a target material layer; one end of the deposition channel communicates with the first opening, the other end faces the substrate, and a target material layer is arranged on the inner wall; the magnet group is connected with the reaction cavity, projections of the deposition channel and the magnet group in the axial direction of the deposition channel do not coincide, and the magnet group forms particle sputtering points in the reaction cavity; wherein the nearest point, close to the sputtering point, of the deposition channel is a base point, and the extension line of the connecting line of the sputtering point and the base point intersects with the interior of the deposition channel. By means of the arrangement, it is guaranteed that the high-energy particles emitted from the particle emission points can move to the surface of the substrate only after being collided at least once, the kinetic energy of the high-energy particles bombarded on the substrate can be reduced, and damage to the substrate and a deposited film when the high-energy particles bombard the substrate can be relieved or even avoided.

Description

Technical Field

[0001] This application relates to the field of magnetron sputtering technology, specifically to a sputtering cathode and a magnetron sputtering device. Background Technology

[0002] In the field of magnetron sputtering, magnetron sputtering refers to the process of using the combined effects of magnetic and electric fields in a vacuum environment to sputter target atoms onto the substrate surface and deposit them into a thin film by bombarding the substrate with high-energy particles. However, the high kinetic energy of the high-energy particles can cause damage to the substrate and the deposited film during the bombardment process, such as increased surface roughness due to lattice defects. Furthermore, the high kinetic energy of the high-energy particles bombarding the substrate can cause the substrate to vibrate at a higher frequency and heat up, which may lead to a decrease in the performance or damage to temperature-sensitive materials. Utility Model Content

[0003] In view of this, this application provides a sputtering cathode that solves the problems of damage to the substrate and deposited thin film during the coating process, as well as the degradation or damage to the properties of high-temperature sensitive materials. This application also provides a magnetron sputtering apparatus including the above-mentioned sputtering cathode.

[0004] To achieve the above objectives, this application provides the following technical solution:

[0005] A sputtering cathode for forming a deposited thin film on a substrate surface, comprising:

[0006] The reaction chamber has a first opening and an inner wall provided with a target material layer;

[0007] The deposition channel has one end connected to the first opening and the other end facing the substrate, and the inner wall is provided with a target material layer;

[0008] A magnet assembly is connected to the reaction chamber, and the projections of the deposition channel and the magnet assembly do not coincide in the axial direction of the deposition channel. The magnet assembly forms particle sputtering points within the reaction chamber.

[0009] The nearest point of the deposition channel to the sputtering point is the base point, and the extension of the line connecting the sputtering point and the base point intersects the interior of the deposition channel.

[0010] Optionally, the magnet assembly includes a first magnet and a second magnet with opposite magnetic properties, the deposition channel, the first magnet and the second magnet are spaced apart on the circumferential outer side of the reaction chamber, and a cooling channel is provided in at least one interval.

[0011] Optionally, at least two mounting slots are provided on the circumferential outer side of the reaction chamber, and both the first magnet and the second magnet are disposed in the mounting slots.

[0012] Optionally, each of the mounting slots has an open end on the side opposite to the center of the reaction chamber, and both the first magnet and the second magnet are magnets, with each open end having a magnetic yoke.

[0013] Optionally, multiple magnet groups are provided, and the multiple magnet groups are symmetrically arranged about the axis of the deposition channel.

[0014] Optionally, it also includes an air inlet channel that communicates with the reaction chamber and injects process gas into the reaction chamber, wherein the air inlet channel and the deposition channel are located on opposite sides of the reaction chamber.

[0015] Optionally, it also includes a housing, in which the reaction chamber, the deposition channel and the magnet assembly are all disposed, and the housing has a second opening, and the deposition channel connects the first opening and the second opening.

[0016] Optionally, it may also include an auxiliary anode that is insulated from the housing, the auxiliary anode being located within the reaction chamber and coaxially arranged with the cylindrical reaction chamber.

[0017] Optionally, the axis of the deposition channel is perpendicular to the substrate, and the projection of the deposition channel onto the substrate is located in the central region of the substrate.

[0018] A magnetron sputtering apparatus comprising the sputtering cathode described in any of the preceding claims.

[0019] The sputtering cathode provided in this application includes a reaction chamber, a deposition channel, and a magnet assembly. When a film is deposited onto a substrate through the sputtering cathode, high-energy particles are ejected from the particle sputtering point formed by the magnet assembly. The high-energy particles are guided to the substrate through the deposition channel. Here, it is ensured that the projection of the deposition channel and the magnet assembly in the axial direction of the deposition channel do not coincide, and that the nearest point of the deposition channel to the sputtering point is the base point. The extension line of the line connecting the sputtering point and the base point intersects the interior of the deposition channel. This arrangement ensures that the farthest moving position of the high-energy particles before a collision is the intersection point of the aforementioned extension line and the deposition channel. In other words, high-energy particles ejected from the particle emission point need to undergo at least one collision to reach the substrate surface. Since the kinetic energy of the high-energy particles decreases after colliding with the target layer on the inner wall of the reaction chamber and the target layer on the inner wall of the deposition channel, the kinetic energy of the high-energy particles bombarding the substrate is also reduced. This can mitigate or even avoid damage to the substrate and the deposited film caused by the high-energy particles bombarding the substrate. Furthermore, as the kinetic energy of the high-energy particles bombarding the substrate decreases, the vibration frequency generated by the high-energy particles on the substrate surface decreases, thereby reducing the temperature of the substrate surface and thus slowing down or even preventing the performance degradation or damage of temperature-sensitive materials. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of the sputtering cathode and substrate provided in this embodiment;

[0022] Figure 2 for Figure 1 Cross-sectional view at point YY.

[0023] exist Figure 1 and Figure 2 middle:

[0024] 1-Sputtering cathode, 2-Substrate;

[0025] 101-Reaction chamber, 102-Deposition channel, 103-Target layer, 104-Magnet assembly, 105-Cooling channel, 106-Mounting groove, 107-Magnetic yoke, 108-Air inlet channel, 109-Shell, 1010-Auxiliary anode;

[0026] 10101 - First opening, 10401 - First magnet, 10402 - Second magnet, 10901 - Second opening. Detailed Implementation

[0027] This application provides a sputtering cathode that solves the problems of damage to the substrate and deposited thin film during the coating process, as well as the degradation or damage to the properties of high-temperature sensitive materials. This application also provides a magnetron sputtering apparatus including the above-described sputtering cathode.

[0028] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0029] like Figure 1 and Figure 2As shown, this application provides a sputtering cathode 1, which utilizes the combined effect of magnetic and electric fields in a vacuum environment to sputter target atoms onto the surface of a substrate 2 by bombarding it with high-energy particles, forming a thin film. This sputtering cathode 1, used to form a deposited thin film on the surface of the substrate 2, mainly includes a reaction chamber 101, a deposition channel 102, and a magnet assembly 104. The reaction chamber 101 is a chamber for generating high-energy particles through the action of magnetic and electric fields. The reaction chamber 101 is a semi-closed structure with a first opening 10101, and a target material layer 103 is provided on the inner wall of the reaction chamber 101. The deposition channel 102 is a channel for the movement of high-energy particles and target atoms. One end of the deposition channel 102 is connected to the first opening 10101, and the other end of the deposition channel 102 faces the substrate 2. The deposition channel 102 is used to guide target atoms to the substrate 2, and a target material layer 103 is provided on the inner wall. The target material is designed as a cathode in the electric field. The target atoms are detached from the surface by high-energy ion bombardment and deposited on the surface of the substrate 2 with atomic precision. Magnet assembly 104 is connected to reaction chamber 101, and the projections of deposition channel 102 and magnet assembly 104 do not coincide in the axial direction of deposition channel 102. That is, magnet assembly 104 is located on one radial side of deposition channel 102. Here, magnet assembly 104 forms particle sputtering points within reaction chamber 101. Since the particle sputtering points formed by magnet assembly 104 are located in the middle of magnet assembly 104, this arrangement also means that the projections of particle sputtering points and deposition channel 102 do not coincide in the axial direction of deposition channel 102, i.e., the particle sputtering points are located on one radial side of deposition channel 102. Furthermore, the nearest point of deposition channel 102 to the sputtering point is designated as the base point, and the extension of the line connecting the sputtering point and the base point intersects the interior of deposition channel 102. For an example, please refer to [link to example]. Figure 2 ,by Figure 2Point A represents the sputtering point of the particles, point B represents the base point, and point C represents the intersection of the extension of the line connecting the sputtering point and the base point with the deposition channel 102. With this configuration, during the deposition process from the sputtering cathode 1 to the substrate 2, the farthest point C that a high-energy particle emitted from sputtering point A that does not collide with the substrate 2 can reach is the point C. The remaining high-energy particles emitted from sputtering point A will collide with the target material of the reaction chamber 101 or with the target material on the side of the deposition channel 102 away from the substrate 2. In other words, high-energy particles emitted from sputtering point A need to collide with the target material at least once before reaching the substrate 2, thus preventing direct impact of high-energy particles from the sputtering point onto the substrate 2 or the deposited film on the substrate 2. Impact reduces the kinetic energy of the high-energy particles, thereby mitigating or even preventing damage to the substrate 2 or the deposited film caused by high-energy particle bombardment. Furthermore, since high-energy particles need to collide with the target material at least once before reaching the substrate 2, the vibration amplitude generated by the particles bombarding the substrate 2 will decrease after the particle kinetic energy is reduced. Consequently, the temperature generated by the particle vibration will decrease. This reduces the performance degradation or damage to the temperature-sensitive substrate 2 and the deposited thin film caused by the bombardment of high-energy particles, thus further protecting the substrate 2 and the deposited thin film.

[0030] It should be noted that the number of first openings 10101 is not limited here. One or more first openings 10101 can be set, and the number of corresponding sedimentation channels 102 is the same as the number of first openings 10101. That is, the sedimentation channels 102 are set in a one-to-one correspondence with the first openings 10101.

[0031] It should also be noted that the number of magnet groups 104 is not limited here. It is sufficient to ensure that the projections of the axial deposition channel 102 and the magnet group 104 do not overlap.

[0032] It should also be noted that the axial direction of the deposition channel 102 is... Figure 2 The direction indicated by the bidirectional arrow Z is the radial direction of the deposition channel 102. Figure 2 The direction indicated by the double-headed arrow X.

[0033] For example, such as Figure 2 As shown, the particle sputtering point is Figure 2 Point A or point D in the diagram.

[0034] In the above-described sputtering cathode 1, when a film is deposited onto the substrate 2, high-energy particles are ejected from the particle sputtering point formed by the magnet assembly 104. These high-energy particles are guided to the substrate 2 through the deposition channel 102. It is ensured that the projections of the deposition channel 102 and the magnet assembly 104 do not coincide along the axial direction of the deposition channel 102, and that the nearest point of the deposition channel 102 to the sputtering point is the base point. The extension of the line connecting the sputtering point and the base point intersects the interior of the deposition channel 102. This arrangement ensures that high-energy particles are effectively deposited without being ejected. The furthest point of movement before the collision is the intersection of the extended line and the deposition channel 102. This means that a high-energy particle emitted from the particle emission point needs to undergo at least one collision to reach the surface of the substrate 2. Since the kinetic energy of the high-energy particle decreases after colliding with the target layer 103 on the inner wall of the reaction chamber 101 and the target layer 103 on the inner wall of the deposition channel 102, the kinetic energy of the high-energy particle bombarding the substrate 2 is also reduced. This mitigates or even prevents damage to the substrate 2 and the deposited film caused by the high-energy particle bombardment. Furthermore, because the kinetic energy of the high-energy particle bombarding the substrate 2 is reduced, the vibration frequency generated by the high-energy particle on the surface of the substrate 2 decreases, thereby lowering the temperature of the substrate 2 surface and mitigating or even preventing performance degradation or damage to the temperature-sensitive material.

[0035] In some embodiments, please refer to Figure 1 and Figure 2 The magnet assembly 104 includes a first magnet 10401 and a second magnet 10402 with opposite magnetic properties, which form a magnetic field. When the sputtering cathode 1 forms a deposited thin film on the substrate 2 in a vacuum environment using the combined magnetic and electric fields, the components in the sputtering cathode 1 generate heat during continuous operation. The continuously rising temperature will affect the deposition effect of the sputtering cathode 1 on the substrate 2. Therefore, the deposition channel 102, the first magnet 10401, and the second magnet 10402 are spaced apart on the circumferential outer side of the reaction chamber 101, and a cooling channel 105 is provided in at least one interval. In this way, by setting the cooling channel 105, the temperature of each component in the sputtering cathode 1 can be reduced, ensuring the working efficiency of the sputtering cathode 1, thereby improving the forming efficiency of the deposited thin film on the substrate 2. In addition, by setting the cooling channel 105 in at least one gap between the deposition channel 102, the first magnet 10401 and the second magnet 10402, the gap acts as a pipeline, which can reduce the setting of pipelines for the flow of cooling medium, making the overall arrangement of the sputtering cathode 1 more streamlined and reliable.

[0036] Of course, in order to improve the cooling effect of the cooling channel 105 on the internal components of the sputtering cathode 1, cooling channels 105 are provided in all intervals between the deposition channel 102, the first magnet 10401 and the second magnet 10402.

[0037] For example, the cooling medium in the cooling channel 105 can be water, ethylene glycol, liquid nitrogen, or Freon.

[0038] In addition, the magnet assembly 104 can also be other structures, such as a U-shaped magnet with different magnetism at both ends, so that the magnet assembly 104 can also form a magnetic field in the reaction chamber 101.

[0039] In some embodiments, please refer to Figure 1 and Figure 2 At least two mounting slots 106 are provided on the circumferential outer side of the reaction chamber 101, and the first magnet 10401 and the second magnet 10402 are both disposed in the mounting slots 106. Specifically, by arranging the first magnet 10401 and the second magnet 10402 in the manner described above, the first magnet 10401 and the second magnet 10402 are limited in position, preventing them from shaking and improving the overall stability of the sputtering cathode 1.

[0040] In some embodiments, please refer to Figure 1 and Figure 2 Each mounting slot 106 has an open end on the side opposite to the center of the reaction chamber 101. The first magnet 10401 and the second magnet 10402 are both magnets, and each open end is provided with a magnetic yoke 107. By setting the magnetic yoke 107, magnetic leakage of the first magnet 10401 and the second magnet 10402 can be avoided, thereby ensuring that sputtering only occurs within the reaction chamber 101. This arrangement can also improve the thin film forming effect on the substrate 2 to a certain extent.

[0041] In addition, the first magnet 10401 and the second magnet 10402 can also be electromagnets, and this arrangement can also enable the first magnet 10401 and the second magnet 10402 to form particle sputtering points in the reaction chamber 101.

[0042] In some embodiments, please refer to Figure 1 and Figure 2Multiple magnet groups 104 are provided, and these multiple magnet groups 104 are symmetrically arranged about the axis of the deposition channel 102. Specifically, all multiple magnet groups 104 are connected to the reaction chamber 101. By providing multiple magnet groups 104, multiple particle sputtering points are provided within the reaction chamber 101, and these multiple particle sputtering points are symmetrically arranged about the axis of the deposition channel 102. Here, by providing multiple particle sputtering points, the generation rate of high-energy particles can be increased, thereby improving the deposition efficiency of the thin film on the substrate 2. Furthermore, by symmetrically arranging the multiple particle sputtering points about the axis of the deposition channel 102, some of the high-energy particles ejected from these symmetrically arranged particle sputtering points will collide. This collision can reduce the kinetic energy of the high-energy particles, thereby preventing excessively high-energy particles from bombarding the substrate 2, thus protecting the substrate 2 and the deposited thin film.

[0043] Furthermore, it should be noted that only one magnet group 104 can be set, that is, only one particle sputtering point is formed in the reaction chamber 101. Further, a baffle (not shown in the figure) is set on the opposite side of the particle sputtering point in the reaction chamber 101. The baffle can deflect high-energy particles so that the particles can continue to hit the target layer 103.

[0044] It is worth mentioning that this application sets multiple magnet groups 104 on a reaction chamber. Compared with the ordinary dual-target structure opposing sputtering cathode structure, the sputtering cathode 1 in this embodiment is equivalent to the size of one of its targets, which can make the equipment miniaturized, thereby reducing material costs and footprint.

[0045] In some embodiments, please refer to Figure 1 and Figure 2 The sputtering cathode 1 also includes an inlet channel 108 that communicates with the reaction chamber 101 and injects process gas into the reaction chamber 101. The inlet channel 108 and the deposition channel 102 are located on opposite sides of the reaction chamber 101. This arrangement facilitates the placement of the inlet channel 108 and the deposition channel 102, avoids interference between them, and also facilitates the placement of the magnet assembly 104. It should be noted that the number of inlet channels 108 is not limited here; one or more inlet channels 108 can be provided.

[0046] Alternatively, the inlet channel 108 may not be provided, or the process gas may be diffused into the reaction chamber 101 through the deposition channel 102, as long as the content in the reaction chamber 101 can reach the content when sputtering the process gas.

[0047] In some embodiments, please refer to Figure 1 and Figure 2The sputtering cathode 1 also includes a housing 109, within which the reaction chamber 101, deposition channel 102, and magnet assembly 104 are all housed. Specifically, the housing 109 provides mounting positions for the reaction chamber 101, deposition channel 102, magnet assembly 104, and yoke 107, with the yoke 107 abutting against the inner wall of the housing 109 to ensure the stability of the connection between the reaction chamber 101 and the magnet assembly 104 within the housing 109. Furthermore, the housing 109 has a second opening 10901, and the deposition channel 102 connects the first opening 10101 and the second opening 10901. This means the walls of the reaction chamber 101, deposition channel 102, and housing 109 are interconnected, allowing the deposition channel 102 to support the reaction chamber 101 and improve the structural stability of the sputtering cathode 1.

[0048] In some embodiments, please refer to Figure 1 and Figure 2 The sputtering cathode 1 also includes an auxiliary anode 1010 insulated from the housing 109. Specifically, the auxiliary anode 1010 is connected to the positive terminal of the sputtering power supply. The auxiliary anode 1010 is made of a high-temperature conductive material. By setting the auxiliary anode 1010, a stable plasma can be generated within the reaction chamber 101, thereby improving the deposition film formation effect. Furthermore, the auxiliary anode 1010 is located within the reaction chamber 101 and is coaxially arranged with the cylindrical reaction chamber 101. This arrangement further enables the generation of a stable plasma within the reaction chamber 101, further improving the deposition film formation effect.

[0049] In some embodiments, the auxiliary anode 1010 may not be provided, and the vacuum chamber of the magnetron sputtering device (not shown in the figure) may be grounded by a wire, which can also generate plasma in the reaction chamber 101.

[0050] It should be noted that the shape of the reaction chamber 101 is not limited here. The reaction chamber 101 can be cylindrical, elliptical cylindrical, polygonal prism, etc.

[0051] In some embodiments, please refer to Figure 1 and Figure 2 The axis of the deposition channel 102 is perpendicular to the substrate 2. This configuration allows high-energy particles and target atoms to be guided to the substrate 2 more efficiently, improving the formation efficiency and growth rate of the deposited thin film on the substrate 2. Furthermore, the projection of the deposition channel 102 onto the substrate 2 is located in the central region of the substrate 2. This allows high-energy particles and target atoms to be guided more evenly to different parts of the substrate 2, making the growth efficiency of the deposited thin film in different parts of the substrate 2 approximately the same, thus improving the formation effect of the deposited thin film.

[0052] Furthermore, the axis of the deposition channel 102 is not perpendicular to the substrate 2, and / or the projection of the deposition channel 102 on the substrate 2 is not located in the central region of the substrate 2. With this configuration, it is possible to deposit a film on the surface of the substrate 2 by the sputtering cathode 1.

[0053] The working principle of sputtering cathode 1 is explained below: The entire sputtering cathode 1 and substrate 2 are located in a high vacuum chamber. Coolant is introduced into the cooling channel of sputtering cathode 1, and process gas is introduced through the gas inlet channel 108. After the semi-enclosed reaction chamber 101 reaches the atmosphere of the process gas, the cathode power supply is turned on. Plasma is generated in the reaction chamber 101 of sputtering cathode 1. Under the combined action of magnetic and electric fields, sputtering occurs on the target surface near the magnet assembly 104. Figure 2 Position A in the middle) ensures that the downward-splashing particles will only splash as shown in the image. Figure 2 The particle sputtering points are located at position C, and will not directly sputter out of the deposition channel 102 and bombard the substrate 2. That is, all diffused particles undergo at least one collision deceleration within the reaction chamber 101. The particle sputtering points of another symmetrically arranged magnet group 104 ( Figure 2 The sputtered particles (at position D) collide with the particles sputtered at the particle construction point of the aforementioned magnet assembly 104. This collision produces a neutralization and deceleration effect, significantly reducing the kinetic energy of the deposited particles. This prevents damage to the substrate 2 and the deposited film during particle bombardment, thus protecting both the substrate 2 and the deposited film.

[0054] This application also provides a magnetron sputtering apparatus including the aforementioned sputtering cathode 1. The magnetron sputtering apparatus includes a sputtering cathode 1, which comprises a reaction chamber 101, a deposition channel 102, and a magnet assembly 104. When a film is deposited onto a substrate 2 through the sputtering cathode 1, high-energy particles are ejected from the particle sputtering point formed by the magnet assembly 104. The high-energy particles are guided to the substrate 2 through the deposition channel 102. It is ensured that the projections of the deposition channel 102 and the magnet assembly 104 do not coincide along the axial direction of the deposition channel 102, and that the nearest point of the deposition channel 102 to the sputtering point is the base point. The line connecting the sputtering point and the base point... The extension line intersects the interior of the deposition channel 102. This arrangement ensures that the furthest possible position of a high-energy particle before a collision is the intersection of the extension line and the deposition channel 102. In other words, a high-energy particle emitted from the particle emission point needs to undergo at least one collision to reach the surface of the substrate 2. Since the kinetic energy of the high-energy particle decreases after colliding with the target layer 103 on the inner wall of the reaction chamber 101 and the target layer 103 on the inner wall of the deposition channel 102, the kinetic energy of the high-energy particle bombarding the substrate 2 is also reduced. This mitigates or even prevents damage to the substrate 2 and the deposited film caused by the high-energy particle bombardment. Furthermore, because the kinetic energy of the high-energy particle bombarding the substrate 2 is reduced, the vibration frequency generated by the high-energy particle on the surface of the substrate 2 decreases, thereby lowering the temperature of the substrate 2 surface and mitigating or even preventing performance degradation or damage to the temperature-sensitive material.

[0055] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0056] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0057] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0058] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0059] It should be understood that the qualifying terms “first,” “second,” “third,” “fourth,” “fifth,” and “sixth” used in the description of the embodiments of this application are only used to more clearly illustrate the technical solutions and are not intended to limit the scope of protection of this application.

[0060] The above description has been given for illustrative and descriptive purposes. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A sputtering cathode, characterized in that, For forming a deposited thin film on the surface of a substrate, including: The reaction chamber has a first opening and an inner wall provided with a target material layer; The deposition channel has one end connected to the first opening and the other end facing the substrate, and the inner wall is provided with a target material layer; A magnet assembly is connected to the reaction chamber, and the projections of the deposition channel and the magnet assembly do not coincide in the axial direction of the deposition channel. The magnet assembly forms particle sputtering points within the reaction chamber. The nearest point of the deposition channel to the sputtering point is the base point, and the extension of the line connecting the sputtering point and the base point intersects the interior of the deposition channel.

2. The sputtering cathode according to claim 1, characterized in that, The magnet assembly includes a first magnet and a second magnet with opposite magnetic properties. The deposition channel, the first magnet, and the second magnet are spaced apart on the circumferential outer side of the reaction chamber, and a cooling channel is provided in at least one of the intervals.

3. The sputtering cathode according to claim 2, characterized in that, At least two mounting slots are provided on the circumferential outer side of the reaction chamber, and the first magnet and the second magnet are both disposed in the mounting slots.

4. The sputtering cathode according to claim 3, characterized in that, Each of the mounting slots has an open end on the side opposite to the center of the reaction chamber. Both the first magnet and the second magnet are magnets, and each of the open ends is provided with a magnetic yoke.

5. The sputtering cathode according to claim 1, characterized in that, Multiple magnet groups are provided, and the multiple magnet groups are symmetrically arranged about the axis of the deposition channel.

6. The sputtering cathode according to claim 1, characterized in that, It also includes an air inlet channel that communicates with the reaction chamber and injects process gas into the reaction chamber, wherein the air inlet channel and the deposition channel are located on opposite sides of the reaction chamber.

7. The sputtering cathode according to any one of claims 1-6, characterized in that, It also includes a housing, in which the reaction chamber, the deposition channel and the magnet assembly are all disposed, and the housing has a second opening, and the deposition channel connects the first opening and the second opening.

8. The sputtering cathode according to claim 7, characterized in that, It also includes an auxiliary anode that is insulated from the housing, the auxiliary anode being located within the reaction chamber and coaxially arranged with the cylindrical reaction chamber.

9. The sputtering cathode according to claim 1, characterized in that, The axis of the deposition channel is perpendicular to the substrate, and the projection of the deposition channel onto the substrate is located in the central region of the substrate.

10. A magnetron sputtering apparatus, characterized in that, Includes the sputtering cathode according to any one of claims 1-9.

Images