Silicon wafer edge etching device
By designing a silicon wafer edge etching device, utilizing an angled etching gas jet and an angle adjustment mechanism, the problem of poor controllability in the silicon wafer edge etching process was solved, achieving precise etching of the silicon wafer edge and improving silicon wafer quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- XIAN ESWIN MATERIAL TECHNOLOGY CO LTD
- Filing Date
- 2025-05-26
- Publication Date
- 2026-04-28
AI Technical Summary
In existing technologies, the controllability of the silicon wafer edge etching process is poor, making it impossible to precisely etch a certain area of the silicon wafer edge, resulting in poor silicon wafer product quality.
Design a silicon wafer edge etching device, which uses a silicon wafer support stage and etching equipment. The etching gas jet direction is controlled by forming an angle between the first pipeline and the second pipeline. Combined with the angle adjustment mechanism and the drive structure, precise etching of the silicon wafer edge is achieved.
It improves the controllability and precision of the etching process, enhances the flexibility of etching, and improves the quality and accuracy of silicon wafer edge etching.
Smart Images
Figure CN224178563U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a silicon wafer edge etching device. Background Technology
[0002] To prevent self-doping effects in heavily doped silicon wafers, a back-side sealing process is typically required. This is achieved by depositing a thin film on the back of the wafer using Chemical Vapor Deposition (CVD). This film effectively prevents dopant from diffusing to the back of the wafer, acting like a sealant to prevent dopant escape. Silicon dioxide (SiO2) films are commonly used as the back-side sealing material. However, this method deposits a low-temperature silicon oxide (LTO) film at the wafer edge. The LTO film can affect the single-crystal growth of the epitaxial layer on the front side of the wafer. Therefore, a back-side sealing film with a certain width from the wafer edge needs to be removed to prevent it from affecting the epitaxial process on the front side of the wafer.
[0003] Existing methods for removing the back seal film from the edges of silicon wafers primarily involve edge etching. This method places the wafer within a processing chamber, where upper and lower plates of the chamber's internal structure press and fix the wafer, leaving a pre-defined etching width at the edges. The etching is then achieved by controlling the flow of chemical etching gas and liquid at the wafer edges. However, this etching method suffers from poor controllability in the edge etching process and the inability to precisely etch a specific area of the wafer edge, resulting in poor quality of the final silicon wafer product. Utility Model Content
[0004] To solve the above-mentioned technical problems, this utility model provides a silicon wafer edge etching device to improve the controllability of the etching process of silicon wafer edges and to accurately etch a certain area of the silicon wafer edge.
[0005] To achieve the above objectives, the technical solution adopted in this utility model embodiment is as follows:
[0006] This utility model embodiment provides a silicon wafer edge etching device, including:
[0007] A silicon wafer support stage includes an upper support plate and a lower support plate arranged opposite each other in a vertical direction. A silicon wafer is disposed between the upper support plate and the lower support plate. The upper support plate and the lower support plate are used to fix the silicon wafer and expose the edge of the silicon wafer.
[0008] An etching apparatus, the etching apparatus being located on one side of the edge of the silicon wafer, the etching apparatus comprising a first conduit and a second conduit;
[0009] Wherein, the first end of the first pipeline and the first end of the second pipeline are connected, and the first pipeline and the second pipeline form an angle;
[0010] Both the first and second pipelines are used to spray etching gas toward the area within the included angle.
[0011] In some embodiments, the first end of the first pipeline is connected to the first end of the second pipeline via an angle adjustment mechanism;
[0012] The angle adjustment mechanism is used to adjust the size of the included angle.
[0013] In some embodiments, at least one first sub-pipe is provided inside the first pipe, the first end of the first sub-pipe is located inside the first pipe, the second end of the first sub-pipe passes through the side wall of the first pipe, and the second end of the first sub-pipe is used to spray etching gas toward the area within the included angle.
[0014] At least one second sub-pipe is provided inside the second pipeline. The first end of the second sub-pipe is located inside the second pipeline, and the second end of the second sub-pipe passes through the side wall of the second pipeline. The second end of the second sub-pipe is used to spray etching gas toward the area within the included angle.
[0015] In some embodiments, the plurality of first sub-pipes includes N groups of first sub-pipes, and each group of first sub-pipes includes at least one first sub-pipe; N is a positive integer;
[0016] In each group of first sub-pipes, the radial direction of each first sub-pipe is at the same angle to the radial direction of the first pipe.
[0017] In different groups of the first sub-pipeline, the angle between the radial direction of the first sub-pipeline and the radial direction of the first pipeline is different.
[0018] In some embodiments, a first driving structure is also included;
[0019] The first drive structure is connected to each of the first sub-pipelines;
[0020] The first drive structure is used to adjust the angle between the radial direction of the first sub-pipe and the radial direction of the first pipe.
[0021] In some embodiments, the plurality of second sub-pipelines include M groups of second sub-pipelines, each group of second sub-pipelines including at least one second sub-pipeline; M is a positive integer;
[0022] In each group of second sub-pipes, the radial direction of each second sub-pipe is at the same angle as the radial direction of the first pipe;
[0023] In different groups of the second sub-pipeline, the angle between the radial direction of the second sub-pipeline and the radial direction of the second pipeline is different.
[0024] In some embodiments, a second driving structure is also included;
[0025] The second drive structure is connected to each of the second sub-pipelines;
[0026] The second drive structure is used to adjust the angle between the radial direction of the second sub-pipe and the radial direction of the second pipe.
[0027] In some embodiments, a resilient pulley is provided at the second end of the first pipeline;
[0028] The second end of the second pipeline is equipped with an elastic pulley.
[0029] In some embodiments, a gas concentration sensor is provided on the side wall of the first pipeline, and the gas concentration sensor is located in the region facing the included angle;
[0030] And / or,
[0031] A gas concentration sensor is installed on the side wall of the second pipeline, and the gas concentration sensor is located in the area facing the included angle.
[0032] In some embodiments, the included angle is greater than 0°, and the included angle is less than or equal to 90°.
[0033] The beneficial effects of this utility model are:
[0034] The silicon wafer edge etching apparatus provided in this embodiment includes a silicon wafer support stage and an etching device. The silicon wafer support stage fixes the silicon wafer through an upper support plate and a lower support plate, exposing the edge of the silicon wafer so that the etching device can etch the edge of the silicon wafer. The etching device includes a first conduit and a second conduit. The first end of the first conduit and the first end of the second conduit are connected, and an angle is formed between the first conduit and the second conduit. By controlling the silicon wafer edge to enter the angle region between the first conduit and the second conduit, targeted etching of the silicon wafer edge within the angle region can be achieved. By adjusting the silicon wafer edge entering the angle region, the controllability of the silicon wafer edge etching process is improved, and precise etching of a certain area of the silicon wafer edge can be achieved. Attached Figure Description
[0035] Figure 1 The diagram illustrates the structure of the silicon wafer edge etching apparatus provided in this embodiment of the present invention.
[0036] Figure 2 This is a schematic diagram showing the structure of the silicon wafer support stage provided in an embodiment of the present invention;
[0037] Figure 3 This diagram illustrates the structure of the first sub-pipeline and the second sub-pipeline in the silicon wafer edge etching apparatus provided in this embodiment of the present invention.
[0038] Explanation of reference numerals in the attached figures:
[0039] 1-Silicon wafer; 11-Upper support plate; 3-Lower support plate; 4-Etching equipment; 41-First conduit; 411-First sub-conduit; 42-Second conduit; 421-Second sub-conduit; 43-Elastic pulley. Detailed Implementation
[0040] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. All other embodiments obtained by those skilled in the art based on the described embodiments of this utility model are within the protection scope of this utility model.
[0041] To address the problems of low controllability and inability to precisely etch a specific area of the silicon wafer edge in the existing technology, this utility model provides a silicon wafer edge etching device.
[0042] like Figure 1 As shown in the figure, an embodiment of the present invention provides a silicon wafer edge etching apparatus, comprising:
[0043] A silicon wafer support stage includes an upper support plate and a lower support plate arranged opposite each other in a vertical direction. A silicon wafer 1 is disposed between the upper support plate and the lower support plate. The upper support plate and the lower support plate are used to fix the silicon wafer and expose the edge of the silicon wafer.
[0044] The specific structure of the silicon wafer support stage is as follows: Figure 2 As shown, optionally, the upper support plate 2 can move up and down to place the silicon wafer 1 on the lower support plate 3, and the silicon wafer 1 is fixed by the up and down movement of the upper support plate 2.
[0045] Furthermore, the upper support plate 2 and the lower support plate 3 can drive the silicon wafer 1 to rotate.
[0046] Etching equipment 4 is located on one side of the edge of the silicon wafer 1, and the etching equipment 4 includes a first pipeline 41 and a second pipeline 42;
[0047] Wherein, the first end of the first pipe 41 is connected to the first end of the second pipe 42, and the first pipe 41 and the second pipe 42 form an angle;
[0048] Both the first conduit 41 and the second conduit 42 are used to spray etching gas toward the area within the included angle.
[0049] The first conduit 41 and the second conduit 42 are located at the same height as the silicon wafer 1 to ensure that the etching gas sprayed by the first conduit 41 and the second conduit 42 toward the area within the included angle can etch the edge of the silicon wafer 1.
[0050] Optionally, the first end of the first conduit 41 and the first end of the second conduit 42 are fixed by a connection point. A fan-shaped area is formed between the first conduit 41 and the second conduit 42.
[0051] When etching is performed using the silicon wafer edge etching apparatus provided in this embodiment of the present invention, the edge of the silicon wafer 1 is controlled to enter the angle region between the first pipeline 41 and the second pipeline 42. This allows for targeted etching of the edge of the silicon wafer 1 within the angle region. By rotating the silicon wafer through the upper and lower support plates, the edge of the silicon wafer 1 entering the angle region is adjusted, thereby improving the controllability of the etching process of the silicon wafer edge and achieving precise etching of a certain area of the silicon wafer edge. This also reduces the possibility of insufficient etching of the silicon wafer edge.
[0052] Optionally, the silicon wafer edge etching apparatus includes a movable structure connected to the silicon wafer support stage, or the movable structure is connected to the etching equipment 4;
[0053] When the moving structure is connected to the silicon wafer carrier stage, the moving structure is used to drive the silicon wafer carrier stage to move toward or away from the etching equipment 4. By driving the silicon wafer carrier stage to move toward the etching equipment 4, the edge of the silicon wafer 1 is controlled to enter the angle region between the first conduit 41 and the second conduit 42. By driving the silicon wafer carrier stage to move away from the etching equipment 4, the edge of the silicon wafer 1 is controlled to leave the angle region between the first conduit 41 and the second conduit 42.
[0054] When the moving structure is connected to the etching equipment 4, the moving structure is used to drive the etching equipment 4 to move toward or away from the silicon wafer support stage. By driving the etching equipment 4 toward the silicon wafer support stage, the edge of the silicon wafer 1 is controlled to enter the angle region between the first conduit 41 and the second conduit 42. By driving the etching equipment 4 toward the silicon wafer support stage, the edge of the silicon wafer 1 is controlled to leave the angle region between the first conduit 41 and the second conduit 42.
[0055] In some embodiments, the first end of the first pipe 41 is connected to the first end of the second pipe 42 via an angle adjustment mechanism;
[0056] The angle adjustment mechanism is used to adjust the size of the included angle.
[0057] In this embodiment, by adjusting the angle between the first pipe 41 and the second pipe 42 through the angle adjustment mechanism, the size of the edge area of the silicon wafer 1 that can be accommodated in the angle area can be adjusted, and the targeted etching of a certain area of the edge of the silicon wafer 1 can be more accurately carried out, so as to achieve precise control of the etching amount, increase the controllability of etching, and increase the flexibility of the etching process.
[0058] The size of this included angle can be adjusted according to the size of the silicon wafer or as required.
[0059] Preferably, the included angle is greater than 0°, and the included angle is less than or equal to 90°.
[0060] That is, the maximum angle between the first pipe 41 and the second pipe 42 is designed to be 90°.
[0061] In some embodiments, at least one first sub-pipe 411 is provided inside the first pipe 41, the first end of the first sub-pipe 411 is located inside the first pipe 41, the second end of the first sub-pipe 411 passes through the side wall of the first pipe 41, and the second end of the first sub-pipe 411 is used to spray etching gas toward the area within the included angle.
[0062] At least one second sub-pipe 421 is provided inside the second pipe 42. The first end of the second sub-pipe 421 is located inside the second pipe 42, and the second end of the second sub-pipe 421 passes through the side wall of the second pipe 42. The second end of the second sub-pipe 421 is used to spray etching gas toward the area within the included angle.
[0063] like Figure 3 As shown, Figure 3 The diagram illustrates the first sub-pipe and the second sub-pipe, with arrows representing the first sub-pipe 411 and the second sub-pipe 421. The direction of the arrows indicates the direction of the etching gas injection in the first sub-pipe 411 and the second sub-pipe 421.
[0064] During etching, etching gas can be introduced into the first pipe 41 and the second pipe 42. The etching gas in the first pipe 41 enters the first sub-pipe 411 from the first end and is then sprayed into the area within the included angle from the second end of the first sub-pipe 411. The etching gas in the second pipe 42 enters the second sub-pipe 421 from the first end and is then sprayed into the area within the included angle from the second end of the second sub-pipe 421.
[0065] Optionally, the first sub-pipe 411 and the second sub-pipe 421 can be controlled to close or open.
[0066] When there are multiple first sub-pipes 411, one or more first sub-pipes 411 can be opened while the rest of the first sub-pipes 411 are closed. Etching gas is sprayed into the area within the included angle only through one or more open first sub-pipes 411, so as to control the amount of etching gas sprayed.
[0067] When there are multiple second sub-pipes 421, one or more second sub-pipes 421 can be opened while the rest are closed. Etching gas is sprayed into the area within the included angle only through one or more open second sub-pipes 421, thereby controlling the amount of etching gas sprayed.
[0068] It should be noted that the number of first sub-pipes 411 and second sub-pipes 421 can be the same or different. Also, the number of first sub-pipes 411 that are open and the number of second sub-pipes 421 that are open can be the same or different.
[0069] Furthermore, the plurality of first sub-pipes 411 include N groups of first sub-pipes 411, and each group of first sub-pipes 411 includes at least one first sub-pipe 411; N is a positive integer;
[0070] In each group of first sub-pipes 411, the radial direction of each first sub-pipe 411 is at the same angle to the radial direction of the first pipe 41.
[0071] In different groups of the first sub-pipeline 411, the angle between the radial direction of the first sub-pipeline 411 and the radial direction of the first pipeline 41 is different.
[0072] It should be noted that the angle between the radial direction of the first sub-pipe 411 and the radial direction of the first pipe 41 can be understood as the angle at which the first sub-pipe 411 sprays etching gas toward the angled region, i.e. Figure 3 The direction of the middle arrow.
[0073] When there are multiple first sub-pipes 411, the multiple first sub-pipes 411 can be divided into N groups, and the number of first sub-pipes 411 in each group is equal or should be kept as equal as possible.
[0074] For example, when the number of first sub-pipes 411 is 8 and N is 3, the number of first sub-pipes 411 in each of the 3 groups is 3, 3 and 2 respectively. When the number of first sub-pipes 411 is 10 and N is 2, the number of first sub-pipes 411 in each of the 2 groups is 5 and 5 respectively.
[0075] In each group, the angle between the radial direction of each first sub-pipe 411 and the radial direction of the first pipe 41 is the same, that is... Figure 3 The arrows for each first sub-pipe 411 in each group shown are exactly the same.
[0076] In different groups of first sub-pipes 411, the angle between the radial direction of the first sub-pipe 411 and the radial direction of the first pipe 41 is different, that is... Figure 3 The arrows for the first sub-pipe 411 in the different groups shown have different directions.
[0077] In other words, the direction of the first sub-pipes 411 in different groups of the first pipe 41 can be controlled independently. By adjusting the direction of the first sub-pipes 411 in different groups, the direction of the etching gas sprayed in the first sub-pipe 411 can be controlled more precisely, so that the concentration of the etching gas in the angle region is more uniform, or so that the etching gas is sprayed as far as possible to the edge region of the silicon wafer 1, thereby increasing the etching efficiency.
[0078] Alternatively, each group of first sub-pipes 411 can be designed to include only one first sub-pipe 411, meaning that the direction of each first sub-pipe 411 can be controlled independently.
[0079] Furthermore, it also includes a first drive structure;
[0080] The first drive structure is connected to each of the first sub-pipelines 411;
[0081] The first drive structure is used to adjust the angle between the radial direction of the first sub-pipe 411 and the radial direction of the first pipe 41.
[0082] Specifically, the first drive structure can control each group of first sub-pipes 411 separately, or control each first sub-pipe 411 individually.
[0083] Optionally, the first drive structure can be a cylinder structure.
[0084] In some embodiments, the plurality of second sub-pipes 421 include M groups of second sub-pipes 421, each group of second sub-pipes 421 including at least one second sub-pipe 421; M is a positive integer;
[0085] In each group of second sub-pipes 421, the radial direction of each second sub-pipe 421 is at the same angle to the radial direction of the second pipe 42;
[0086] In different groups of the second sub-pipe 421, the angle between the radial direction of the second sub-pipe 421 and the radial direction of the second pipe 42 is different.
[0087] It should be noted that the angle between the radial direction of the second sub-pipe 421 and the radial direction of the second sub-pipe 42 can be understood as the angle at which the second sub-pipe 421 sprays etching gas toward the angled region, i.e. Figure 3 The direction of the middle arrow.
[0088] When there are multiple second sub-pipes 421, the multiple second sub-pipes 421 can be divided into M groups, and the number of second sub-pipes 421 in each group is equal or should be kept as equal as possible.
[0089] In each group, the angle between the radial direction of each second sub-pipe 421 and the radial direction of the second pipe 42 is the same, that is... Figure 3 The arrows for each second sub-pipe 421 in each group shown are exactly the same.
[0090] In different groups of second sub-pipes 421, the angle between the radial direction of the second sub-pipe 421 and the radial direction of the second pipe 42 is different, that is... Figure 3 The arrow directions corresponding to the second sub-pipes 421 in different groups shown are different.
[0091] In other words, it can be understood that the direction of the second sub-pipes 421 in different groups of the second pipe 42 can be controlled independently. By adjusting the direction of the second sub-pipes 421 in different groups, the direction of the etching gas sprayed in the second sub-pipes 421 can be controlled more precisely, so that the concentration of etching gas in the angle region is more uniform, or so that the etching gas is sprayed as far as possible to the edge region of the silicon wafer 1, thereby increasing the etching efficiency.
[0092] Alternatively, each group of second sub-pipes 421 can be designed to include only one second sub-pipe 421, meaning that the direction of each second sub-pipe 421 can be controlled independently.
[0093] Where N equals M, or N does not equal M.
[0094] Furthermore, it also includes a second drive structure;
[0095] The second drive structure is connected to each of the second sub-pipes 421;
[0096] The second drive structure is used to adjust the angle between the radial direction of the second sub-pipe 421 and the radial direction of the second pipe 42.
[0097] Specifically, the second drive structure can control each group of second sub-pipes 421 separately, or control each second sub-pipe 421 individually.
[0098] Optionally, the first drive structure can be a cylinder structure.
[0099] In some embodiments, a resilient pulley 43 is provided at the second end of the first conduit 41;
[0100] The second end of the second pipe 42 is provided with an elastic pulley 43.
[0101] As the edge of silicon wafer 1 gradually enters the angled region, after the edge of silicon wafer 1 contacts the elastic pulley 43, the elastic pulley 43 will retract inward and remain stable after the edge of silicon wafer 1 enters the angled region.
[0102] In some embodiments, a gas concentration sensor is provided on the side wall of the first pipeline 41, and the gas concentration sensor is located in the area facing the included angle;
[0103] And / or,
[0104] A gas concentration sensor is provided on the side wall of the second pipeline 42, and the gas concentration sensor is located in the area facing the included angle.
[0105] By setting a gas concentration sensor, the concentration of etching gas in the included angle area can be sensed. After the concentration of etching gas in the included angle area reaches a certain value, the first pipeline 41 and the second pipeline 42 stop supplying etching gas.
[0106] The specific process of the silicon wafer edge etching apparatus provided by the embodiments of this utility model is described below:
[0107] Control the silicon wafer stage to move toward the etching equipment, or control the etching equipment to move toward the silicon wafer stage, until the edge area of the silicon wafer enters the angled area. Control the first and second pipelines to introduce etching gas into the angled area. After etching is completed, control the silicon wafer stage to rotate the silicon wafer and repeat the above steps to etch the next area of the silicon wafer edge until the entire edge of the silicon wafer is etched.
[0108] The silicon wafer edge etching apparatus provided in this embodiment of the invention enables precise control of the etching amount at the edge of the silicon wafer, increases the flexibility of the etching process, improves the etching accuracy and quality, and helps to improve the manufacturing quality and performance of the silicon wafer.
[0109] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, since the embodiments are basically similar to the product embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the product embodiments.
[0110] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “upper,” “lower,” “left,” and “right” are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.
[0111] It is understandable that when a component such as a layer, film, region, or substrate is referred to as being "above" or "below" another component, the component may be "directly" located "above" or "below" the other component, or there may be intermediate components present.
[0112] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.
[0113] The above description is the preferred embodiment of this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this utility model, and these improvements and modifications should also be considered within the protection scope of this utility model.
Claims
1. A silicon wafer edge etching apparatus, characterized in that, include: A silicon wafer support stage includes an upper support plate and a lower support plate arranged opposite each other in a vertical direction. A silicon wafer is disposed between the upper support plate and the lower support plate. The upper support plate and the lower support plate are used to fix the silicon wafer and expose the edge of the silicon wafer. An etching apparatus, the etching apparatus being located on one side of the edge of the silicon wafer, the etching apparatus comprising a first conduit and a second conduit; Wherein, the first end of the first pipeline and the first end of the second pipeline are connected, and the first pipeline and the second pipeline form an angle; Both the first and second pipelines are used to spray etching gas toward the area within the included angle.
2. The silicon wafer edge etching apparatus according to claim 1, characterized in that, The first end of the first pipeline is connected to the first end of the second pipeline via an angle adjustment mechanism; The angle adjustment mechanism is used to adjust the size of the included angle.
3. The silicon wafer edge etching apparatus according to claim 1, characterized in that, At least one first sub-pipe is provided inside the first pipeline. The first end of the first sub-pipe is located inside the first pipeline, and the second end of the first sub-pipe passes through the side wall of the first pipeline. The second end of the first sub-pipe is used to spray etching gas toward the area within the included angle. At least one second sub-pipe is provided inside the second pipeline. The first end of the second sub-pipe is located inside the second pipeline, and the second end of the second sub-pipe passes through the side wall of the second pipeline. The second end of the second sub-pipe is used to spray etching gas toward the area within the included angle.
4. The silicon wafer edge etching apparatus according to claim 3, characterized in that, The plurality of first sub-pipelines include N groups of first sub-pipelines, and each group of first sub-pipelines includes at least one first sub-pipeline; N is a positive integer; In each group of first sub-pipes, the radial direction of each first sub-pipe is at the same angle to the radial direction of the first pipe. In different groups of the first sub-pipeline, the angle between the radial direction of the first sub-pipeline and the radial direction of the first pipeline is different.
5. The silicon wafer edge etching apparatus according to claim 4, characterized in that, It also includes the first drive structure; The first drive structure is connected to each of the first sub-pipelines; The first drive structure is used to adjust the angle between the radial direction of the first sub-pipe and the radial direction of the first pipe.
6. The silicon wafer edge etching apparatus according to claim 3, characterized in that, The plurality of second sub-pipelines comprise M groups of second sub-pipelines, each group of second sub-pipelines comprising at least one second sub-pipeline; M is a positive integer; In each group of second sub-pipes, the radial direction of each second sub-pipe is at the same angle to the radial direction of the second pipe. In different groups of the second sub-pipeline, the angle between the radial direction of the second sub-pipeline and the radial direction of the second pipeline is different.
7. The silicon wafer edge etching apparatus according to claim 3, characterized in that, It also includes a second drive structure; The second drive structure is connected to each of the second sub-pipelines; The second drive structure is used to adjust the angle between the radial direction of the second sub-pipe and the radial direction of the second pipe.
8. The silicon wafer edge etching apparatus according to claim 1, characterized in that, The second end of the first pipeline is equipped with an elastic pulley; The second end of the second pipeline is equipped with an elastic pulley.
9. The silicon wafer edge etching apparatus according to claim 1, characterized in that, A gas concentration sensor is installed on the side wall of the first pipeline, and the gas concentration sensor is located in the area facing the included angle; And / or, A gas concentration sensor is installed on the side wall of the second pipeline, and the gas concentration sensor is located in the area facing the included angle.
10. The silicon wafer edge etching apparatus according to claim 1, characterized in that, The included angle is greater than 0°, and the included angle is less than or equal to 90°.