Thermal field structure for reducing power consumption of single crystal furnace
By optimizing the positional relationship between the electrode unit and the furnace bottom plate and setting multiple layers of insulation, the problem of heat loss at the electrodes of the single crystal furnace was solved, and power consumption was reduced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL CO LTD
- Filing Date
- 2025-05-22
- Publication Date
- 2026-05-12
AI Technical Summary
In existing technologies, a significant amount of heat is lost from the electrodes of the single-crystal furnace, leading to increased power consumption.
By optimizing the positional relationship between the second electrode unit and the furnace bottom plate, limiting the height of the second contact surface extending beyond the top surface of the bottom plate, and setting multiple layers of insulation and carbon protective plates between the electrode units, heat loss is reduced.
This effectively reduces heat loss from the electrodes and lowers the power consumption of the single crystal furnace.
Smart Images
Figure CN224227291U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of hot zone technology for single crystal furnaces, and in particular to a hot zone structure for reducing the power consumption of single crystal furnaces. Background Technology
[0002] Nowadays, in single crystal furnace crystal production, the temperature inside the furnace is mainly provided by the main heater surrounding the crucible and the auxiliary heater located at the bottom of the crucible. In the constant diameter stage, the main heater is used to control the temperature field.
[0003] There are several reasons for heat loss in the thermal field, one of which is heat loss from the electrodes located on the furnace bottom plate. To address this, an insulation layer is often added to the electrode area during the design of the thermal field structure to reduce heat loss. However, this simple insulation design offers limited help in reducing heat loss from the electrodes.
[0004] Therefore, the technical problem with existing technologies lies in how to reduce heat loss from the electrodes. Summary of the Invention
[0005] This application provides a thermal field structure for reducing the power consumption of a single crystal furnace, which solves the technical problem of how to reduce heat loss from the electrodes and achieves the technical effect of reducing heat loss from the electrodes.
[0006] This application provides a thermal field structure for reducing power consumption in a single crystal furnace, employing the following technical solution:
[0007] A thermal field structure for reducing power consumption in a single crystal furnace includes: a furnace bottom plate with a through hole; a first electrode unit located above the furnace bottom plate and corresponding to the through hole; a second electrode unit located below the furnace bottom plate, the second electrode unit comprising: a second body extending from bottom to top through the through hole, or a portion of the second body extending into the through hole; and a third sheath disposed between the second body and the through hole in the furnace bottom plate; wherein the second electrode unit is connected to the first electrode unit, and a second contact surface of the second electrode unit contacts a first contact surface of the first electrode unit, the second contact surface being located below the top surface of the furnace bottom plate, or flush with the top surface of the furnace bottom plate, or the height of the second contact surface protruding from the top surface of the furnace bottom plate being <8mm.
[0008] Preferably, the thermal field structure further includes a heat insulation layer, which is disposed around the through hole and covering the first electrode unit and / or the second electrode unit.
[0009] Preferably, the insulation layer is provided in multiple layers, and a carbon fiber protective plate is provided between the multiple insulation layers.
[0010] Preferably, a first connector portion is provided on the first contact surface, and a second connector portion is provided on the second contact surface; wherein, the first connector portion and the second connector portion are mated together with a concave-convex joint, and the mating form is a detachable connection.
[0011] Preferably, the top surface of the second connector protrudes beyond the top surface of the base plate, and the height of the top surface of the connector protruding beyond the top surface of the base plate is ≤100mm.
[0012] Preferably, the first electrode unit includes: a first body; and a first sheath, wherein the first sheath is sleeved over the first body.
[0013] Preferably, the second electrode unit further includes a fourth septum, which is located above the furnace bottom plate, between the first sheath and the third sheath, and both sides of the fourth septum are in contact with the first sheath and the third sheath, respectively.
[0014] Preferably, the fourth septum corresponds to the contact point between the first body and the second body, the fourth septum extends outward in a direction away from the through hole, and the fourth septum contacts the furnace bottom plate.
[0015] Preferably, the first sheath is made of quartz, and the third sheath and the fourth spacer are made of ceramic.
[0016] Preferably, the second body and the first body are aligned vertically along the central axis, and the diameter of the second body is less than or equal to the diameter of the first body. When the diameter of the second body is less than the diameter of the first body, the third sheath partially fills the empty area of the second body relative to the first body, or an additional sheath is added to fill the empty area of the second body relative to the first body.
[0017] The advantages of this application, which differ from the prior art, are:
[0018] By optimizing the positional relationship between the second electrode unit and the furnace bottom plate, and limiting the height of the second contact surface extending beyond the top surface of the bottom plate, the depth of the second electrode unit extending into the main furnace chamber of the single crystal furnace is limited, thereby reducing the heat absorption area of the second electrode unit in the main furnace chamber and reducing the heat absorption of the second electrode unit. This solves the technical problem of how to reduce heat loss from the electrode and achieves the technical effect of reducing heat loss from the electrode. Attached Figure Description
[0019] Figure 1 This is a cross-sectional schematic diagram of the thermal field structure in this application;
[0020] Figure 2 This is a schematic diagram of the thermal field structure with the second electrode unit position lowered in this application;
[0021] Figure 3 yes Figure 2 Enlarged view of point A in the middle;
[0022] Figure 4 yes Figure 2 A schematic diagram of the structure of the second electrode unit relative to the furnace bottom plate;
[0023] Figure 5 This is another schematic diagram of a thermal field structure in this application;
[0024] Figure 6 This is yet another schematic diagram of the thermal field structure after adjusting the diameter of the second electrode unit in this application.
[0025] Explanation of reference numerals in the attached figures:
[0026] 100. Furnace bottom plate; 11. Through hole; 12. Top surface of bottom plate; 200. First electrode unit; 21. First main body; 211. First connector; 212. First contact surface; 22. First sheath; 23. Second sheath; 300. Second electrode unit; 31. Second main body; 311. Second connector; 3111. Top surface of connector; 312. Second contact surface; 32. Third sheath; 33. Fourth septum; 331. Inner end of septum; 34. Fifth sheath; 400. Insulation layer; 41. First insulation layer; 42. Second insulation layer; 43. Carbon-carbon protective plate; 44. Third insulation layer; 45. Fourth insulation layer; 46. Fifth insulation layer. Detailed Implementation
[0027] The serial numbers assigned to components in this document, such as "first" and "second," are used solely to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages). It should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are used solely for the convenience of describing this application and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0028] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0029] To better understand the above technical solutions, a detailed description of the technical solutions will be provided below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit the scope of this application.
[0030] This application provides a thermal field structure for reducing power consumption in a single crystal furnace, as shown in the following embodiments. Figure 1 and Figure 4 The furnace includes a furnace bottom plate 100, a first electrode unit 200, a second electrode unit 300, and an insulation layer 400. The furnace bottom plate 100 has a through hole 11. The first electrode unit 200 is located above the furnace bottom plate 100 and corresponds to the through hole 11. The first electrode unit 200 is located below the furnace bottom plate 100. The second electrode unit 300 includes a second body 31 and a third sheath 32. The second body 31 passes through the through hole 11 from bottom to top, or a portion of the second body 31 passes through the through hole 11. The third sheath 32 is disposed between the second main body 31 and the through hole 11 of the furnace bottom plate 100; wherein, the second electrode unit 300 is connected to the first electrode unit 200, and the second contact surface 312 of the second electrode unit 300 is in contact with the first contact surface 212 of the first electrode unit 200. The second contact surface 312 is located below the bottom plate top surface 12 of the furnace bottom plate 100, or the second contact surface 312 is flush with the bottom plate top surface 12, or the height of the second contact surface 312 protruding from the bottom plate top surface 12 is <8mm.
[0031] It is understood that the main furnace chamber of the single crystal furnace is located above the furnace bottom plate 100. By optimizing the positional relationship between the second electrode unit 300 and the furnace bottom plate 100, and by limiting the second contact surface 312 to be located in the through hole 11 or limiting the height of the second contact surface 312 extending out of the top surface 12 of the bottom plate, the depth of the second electrode unit 300 extending into the main furnace chamber of the single crystal furnace is limited, thereby reducing the heat absorption area of the second electrode unit 300 in the main furnace chamber and reducing the heat absorption of the second electrode unit 300. This solves the technical problem of how to reduce heat loss from the electrode and achieves the technical effect of reducing heat loss from the electrode. Specifically, for example, when the second contact surface 312 protrudes from the top surface 12 of the bottom plate, the height value of the second contact surface 312 can be 2.8mm, 4mm, 5mm, or 7mm.
[0032] In addition, to prevent heat transfer between the second body 31 and the furnace bottom plate 100, a third sheath 32 is provided between the second body 31 and the furnace bottom plate 100. The third sheath 32 serves two purposes: heat insulation and protection of the second body 31 passing through the through hole 11.
[0033] The thermal field structure also includes a thermal insulation layer 400, which covers the first electrode unit 200 and / or the second electrode unit 300 around the through hole 11. Specifically, the thermal insulation layer 400 can be multiple layers, stacked one on top of the other; this stacking can be vertical stacking, or it can be a wrapping stacking from the inside out, or a combination of vertical stacking and wrapping stacking. Regarding the combination of vertical stacking and wrapping stacking, for example, wrapping stacking is performed first, followed by vertical stacking to cover the entire structure.
[0034] Understandably, reference Figure 1The insulation layer 400 includes a first insulation layer 41, a second insulation layer 42, a third insulation layer 44, a fourth insulation layer 45, and a fifth insulation layer 46. The third insulation layer 44 is a wrap-around type, covering the fourth septum 33 as a whole. After determining the form of the third insulation layer 44, the fourth insulation layer 45 and the fifth insulation layer 46 are stacked vertically to fill the space between the third insulation layer 44 and the main furnace chamber. It is understood that stacking the fourth insulation layer 45 and the fifth insulation layer 46 vertically provides better insulation effect and is easier to disassemble and assemble than setting only one thick insulation layer 400. Of course, setting only one thick insulation layer 400 to replace the fourth insulation layer 45 and the fifth insulation layer 46 is also within the scope of protection of this application. After determining the fourth insulation layer 45 and the fifth insulation layer 46, the first insulation layer 41 and the second insulation layer 42 are then laid on top of them to limit the downward conduction of heat. In addition, the first insulation layer 41 and the second insulation layer 42 leave openings for the first electrode unit 200, and the first insulation layer 41 and the second insulation layer 42 are attached to the first electrode unit 200 to limit the conduction of heat to the first electrode unit 200. It is worth mentioning that a carbon-carbon protective plate 43 is set between the multiple insulation layers 400. The carbon-carbon protective plate 43 has two functions based on its material: first, it provides support to prevent the insulation structure (multi-layer stacking is prone to failure due to high temperature creep or pressure deformation); second, the heat conduction path of the multi-layer insulation felt stacking is singular due to the homogeneity of the materials, making it difficult to effectively control the direction of heat flow and easily forming local hot spots or heat loss; while carbon-carbon composite material has anisotropic thermal conductivity, and by adjusting the arrangement direction of carbon fibers, high thermal conductivity in the horizontal direction and low thermal conductivity in the vertical direction can be achieved, thereby optimizing the thermal field distribution in the single crystal furnace and reducing heat loss downward through the felt of the insulation layer 400; less heat flows downward in the direction of the first electrode unit 200, so the heat loss is also reduced accordingly.
[0035] The first electrode unit 200 includes a first body 21 and a first sheath 22, with the first sheath 22 fitted over the first body 21. The first sheath 22 is used to insulate the first body 21 and prevent it from losing heat. It is understood that, in order to improve the insulation effect, a second sheath 23 can be provided outside the first sheath 22, thereby improving the insulation effect through two layers of sheaths.
[0036] Regarding the connection form between the first body 21 and the second body 31, refer to Figure 2 A first connector 211 is provided on the first contact surface 212, and a second connector 311 is provided on the second contact surface 312; wherein, the first connector 211 and the second connector 311 are mated together, and the mating form is a detachable connection. It can be understood that the above-mentioned detachable connection can be a threaded connection, a plug connection, or a hook connection after rotation.
[0037] It should be noted that the reference Figure 4 The aforementioned definition of the height relationship between the second contact surface 312 and the top surface 12 of the base plate limits the heat absorption area of the second contact surface 311 and the protrusion of the second contact surface 311. Specifically, the top surface 3111 of the second contact surface 311 protrudes beyond the top surface 12 of the base plate, and the height of the top surface 3111 protruding beyond the top surface 12 of the base plate is ≤100mm. It is understandable that the current movement between the first electrode unit 200 and the second electrode unit 300 relies on the contact between the first contact surface 212 and the second contact surface 312, and the connection between the first connector 211 and the second connector 311 ensures the stable docking of the first contact surface 212 and the second contact surface 312; preferably, the height of the connector top surface 3111 protruding from the bottom plate top surface 12 is between 400mm and 700mm. For example, if the height of the connector top surface 3111 protruding from the bottom plate top surface 12 is 550mm, it ensures both connection strength and that the connector top surface 3111 is at a relatively low height.
[0038] refer to Figure 3 The second electrode unit 300 also includes a fourth septum 33, which is located above the furnace bottom plate 100, between the first sheath 22 and the third sheath 32, with both sides of the fourth septum 33 contacting the first sheath 22 and the third sheath 32 respectively. The function of the fourth septum 33 is to prevent the first sheath 22 and the third sheath 32 from directly contacting each other, thus avoiding direct heat conduction from the first sheath 22 to the third sheath 32 and reducing heat conduction to ensure that heat is not lost outward. In one embodiment, the fourth septum 33 directly contacts the top surface 12 of the furnace bottom plate 100, thereby ensuring that the heat obtained by the fourth septum 33 from the first sheath 22 can be dispersed to a location in the main furnace chamber away from the first main body 21, improving the heat insulation effect of the fourth septum 33. In addition, compared to placing the fourth diaphragm 33 on a heat insulation felt, placing the fourth diaphragm 33 on the top surface 12 of the bottom plate of the furnace bottom plate 100 can ensure that the installation position of the fourth diaphragm 33 remains fixed and prevent the heat insulation felt from deforming due to heat.
[0039] Specifically, the fourth diaphragm 33 corresponds to the contact point between the first main body 21 and the second main body 31. The fourth diaphragm 33 extends outward away from the through hole 11 and contacts the furnace bottom plate 100. This design ensures that the first sheath 22 insulates the first main body 21, and the third sheath 32 insulates the second main body 31, avoiding interference between the first main body 21 and the third sheath 32, as well as interference between the second main body 31 and the first sheath 22. Furthermore, the contact point between the first main body 21 and the second main body 31, which was originally a key area for heat loss, is now separated from the first sheath 22 and the third sheath 32 by the upper and lower surfaces of the inner end 331 of the fourth diaphragm 33, ensuring that heat is not conducted between the first sheath 22 and the third sheath 32; the side of the inner end 331 of the diaphragm covers the joint between the first main body 21 and the second main body 31, ensuring that heat at the joint does not dissipate. Regarding materials, it is understandable that the first sheath 22 is made of quartz, while the third sheath 32 and the fourth spacer 33 are made of ceramic. Quartz is superior in high-temperature resistance and will not pollute the environment inside the main furnace; ceramic is low in cost.
[0040] refer to Figure 5 In another embodiment, without the fourth spacer 33, the first sheath 22 directly contacts and connects with the third sheath 32. This design reduces the number of parts and facilitates assembly. In terms of heat preservation, the contact end style of the first sheath 22 or the third sheath 32 can be optimized by extending the contact end of the first sheath 22 or the third sheath 32 away from the first main body 21 or the second main body 31, so as to achieve the heat insulation effect of setting a fourth spacer 33, and prevent heat from being conducted from the first sheath 22 along the third sheath 32 to the outside of the main furnace.
[0041] refer to Figure 6 Regarding the positional relationship between the first body 21 and the second body 31, the second body 31 and the first body 21 are aligned vertically along the central axis, and the diameter of the second body 31 is less than or equal to the diameter of the first body 21. When the diameter of the second body 31 is less than the diameter of the first body 21, the third sheath 32 partially fills the gap between the second body 31 and the first body 21, or an additional sheath is added to fill the gap between the second body 31 and the first body 21. Increasing the diameter of the first body 21 can reduce its resistance; for example, increasing the diameter to 70mm, 75mm, or 80mm reduces heat generation and additional power loss. Alternatively, while ensuring current carrying capacity, reducing the diameter of the second body 31 (e.g., to 70mm, 65mm, 60mm, or 55mm) reduces the contact area between the second body 31 and the first body 21, thus reducing heat conduction.
[0042] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.
[0043] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.
Claims
1. A thermal field structure for reducing power consumption in a single crystal furnace, characterized in that, include: A furnace bottom plate (100) is provided with through holes (11); The first electrode unit (200) is located above the furnace bottom plate (100) and corresponds to the through hole (11); A second electrode unit (300) is provided, wherein the first electrode unit (200) is located below the furnace bottom plate (100), and the second electrode unit (300) comprises: The second body (31) passes through the through hole (11) from bottom to top, or a portion of the second body (31) passes through the through hole (11); The third sheath (32) is disposed between the second main body (31) and the through hole (11) of the furnace bottom plate (100); The second electrode unit (300) is connected to the first electrode unit (200), and the second contact surface (312) of the second electrode unit (300) is in contact with the first contact surface (212) of the first electrode unit (200). The second contact surface (312) is located below the top surface (12) of the bottom plate of the furnace bottom plate (100), or the second contact surface (312) is flush with the top surface (12) of the bottom plate, or the second contact surface (312) protrudes from the top surface (12) of the bottom plate by a height value of <8mm.
2. The thermal field structure according to claim 1, characterized in that, The thermal field structure also includes: A thermal insulation layer (400) is disposed around the through hole (11) on the first electrode unit (200) and / or the second electrode unit (300).
3. The thermal field structure according to claim 2, characterized in that, The insulation layer (400) is provided in multiple layers, and a carbon protective plate (43) is provided between the multiple insulation layers (400).
4. The thermal field structure according to claim 1, characterized in that, The first contact surface (212) is provided with a first connector (211), and the second contact surface (312) is provided with a second connector (311); wherein the first connector (211) and the second connector (311) are connected in a concave-convex manner, and the connection is a detachable connection.
5. The thermal field structure according to claim 4, characterized in that, The top surface (3111) of the second connector (311) protrudes beyond the top surface (12) of the base plate, and the height of the top surface (3111) protruding beyond the top surface (12) of the base plate is ≤100mm.
6. The thermal field structure according to claim 1, characterized in that, The first electrode unit (200) includes: First subject (21); The first sheath (22) is fitted over the first body (21).
7. The thermal field structure according to claim 6, characterized in that, The second electrode unit (300) further includes: The fourth diaphragm (33) is located above the furnace bottom plate (100). The fourth diaphragm (33) is located between the first sheath (22) and the third sheath (32), and both sides of the fourth diaphragm (33) are in contact with the first sheath (22) and the third sheath (32), respectively.
8. The thermal field structure according to claim 7, characterized in that, The fourth septum (33) corresponds to the contact point between the first body (21) and the second body (31). The fourth septum (33) extends outward in a direction away from the through hole (11) and contacts the furnace bottom plate (100).
9. The thermal field structure according to claim 7, characterized in that, The first sheath (22) is made of quartz, and the third sheath (32) and the fourth spacer (33) are made of ceramic.
10. The thermal field structure according to claim 6, characterized in that, The second body (31) and the first body (21) are connected in a straight line along the central axis, and the diameter of the second body (31) is less than or equal to the diameter of the first body (21); when the diameter of the second body (31) is less than the diameter of the first body (21), the third sheath (32) partially fills the empty area of the second body (31) relative to the first body (21), or an additional sheath is added to fill the empty area of the second body (31) relative to the first body (21).