Capacitive coupling plasma processing device

Abstract

The utility model relates to the technical field of semiconductor processing, and discloses a capacitive coupling plasma processing device. The capacitive coupling plasma processing device comprises a spraying block, an electrode assembly, a quartz ring, a supporting ring and an upper cover, the spraying block is communicated with an air supply source, and spraying holes are formed in the lower portion of the spraying block; the electrode assembly is connected below the spraying hole of the spraying block, and the electrode assembly is provided with an air hole communicated with the spraying hole; the quartz ring is annularly arranged on the spraying block and is used for bearing the spraying block; the supporting ring is annularly arranged on the quartz ring and is used for bearing the quartz ring; the upper cover is connected to the top end of the supporting ring and located above the spraying block. According to the utility model, the stability of plasma reaction and the normal work of the electrode assembly are ensured, the distribution of plasmas in a reaction area is effectively limited, the corrosion and pollution risks of the plasmas to the wall of the reaction chamber are reduced, the service life of reactor parts is prolonged, and the stability and controllability of the etching process are ensured.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a capacitively coupled plasma processing device. Background Technology

[0002] In semiconductor manufacturing, etching is a crucial step used to form various circuit structures on semiconductor wafers. Capacitively coupled plasma (CCP) etching reactors are widely used in this process. They achieve etching by applying a radio frequency voltage between the upper and lower electrodes, which excites the process gas into a plasma state, thereby bombarding the wafer surface with ions.

[0003] However, in existing technologies, capacitively coupled plasma etching apparatuses generally suffer from the problem of plasma diffusion to the sidewalls of the reaction chamber, leading to severe corrosion of the inner wall of the chamber. This not only affects the stability of equipment operation but also results in high maintenance frequency and costs. Although existing plasma etching apparatuses can form plasma regions, they fail to effectively constrain their distribution area, resulting in a narrow process window and poor uniformity.

[0004] Therefore, there is an urgent need for a capacitively coupled plasma processing device to solve the aforementioned problems. Utility Model Content

[0005] Based on the above, the purpose of this utility model is to provide a capacitively coupled plasma processing device that effectively constrains the distribution area of ​​plasma, prevents it from spreading disorderly to the reaction chamber wall, improves the stability and process controllability of plasma, expands the process window, and improves etching uniformity.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A capacitively coupled plasma processing device, comprising:

[0008] A spray block connected to an air supply source, with spray holes provided at the bottom of the spray block;

[0009] An electrode assembly is connected to the side of the spray block that is provided with spray holes, and the electrode assembly is provided with air holes that communicate with the spray holes.

[0010] A quartz ring is disposed around the spray block, and the quartz ring is used to support the spray block;

[0011] A support ring is disposed around the quartz ring, and the support ring is used to support the quartz ring;

[0012] The top cover is connected to the top of the support ring and is located above the spray block.

[0013] As a preferred technical solution of a capacitively coupled plasma processing device, the electrode assembly includes an inner electrode and an outer electrode. The inner electrode is connected to the side of the spray block that is provided with spray holes, and the inner electrode is provided with air holes that communicate with the spray holes.

[0014] The outer electrode is coaxially arranged around the outer periphery of the inner electrode.

[0015] As a preferred technical solution of a capacitively coupled plasma treatment device, the capacitively coupled plasma treatment device further includes a fastening assembly, the fastening assembly includes a first fixing ring and a second fixing ring, the first fixing ring is provided with an annular first overlapping portion, the first fixing ring is ringed around the inner electrode and connected to the spray block, and the inner electrode overlaps on the first overlapping portion.

[0016] The second fixing ring is provided with an annular second overlapping portion. The second fixing ring is ringed around the outer electrode and connected to the side of the first fixing ring away from the spray block. The outer electrode overlaps on the second overlapping portion.

[0017] As a preferred technical solution for a capacitively coupled plasma processing device, the fastening assembly further includes a first fastening screw and a second fastening screw. The spray block is provided with a stepped hole, which includes a large-diameter hole and a small-diameter hole. The head of the first fastening screw is polygonal, and the inner wall shape of the large-diameter hole matches the head shape of the first fastening screw. The first fixing ring is provided with a through hole, and the shank of the second fastening screw is provided with a threaded hole. The second fastening screw passes through the through hole, the head of the first fastening screw is embedded in the large-diameter hole, and the shank of the first fastening screw passes through the small-diameter hole and is threaded to the threaded hole.

[0018] As a preferred technical solution for a capacitively coupled plasma processing device, the fastening assembly further includes a pressure block, which is sealed and pressed against the end of the stepped hole opposite to the first fixing ring.

[0019] As a preferred technical solution of a capacitively coupled plasma processing device, the fastening assembly further includes an insulating block and an insulating gasket. The insulating block is disposed between the pressure block and the head of the first fastening screw, and the insulating gasket is disposed between the head of the first fastening screw and the stepped surface of the stepped hole.

[0020] As a preferred embodiment of a capacitively coupled plasma (CCP) processing device, the CCP processing device further includes at least two first positioning pins, the spray block is provided with a first positioning groove corresponding to the first positioning pin, the inner electrode is provided with a second positioning groove corresponding to the first positioning pin, and the two ends of the first positioning pin are respectively embedded in the first positioning groove and the second positioning groove; and / or

[0021] The capacitively coupled plasma processing device further includes at least two second positioning pins, the quartz ring is provided with a third positioning groove corresponding to the second positioning pin, the support ring is provided with a fourth positioning groove corresponding to the second positioning pin, and the two ends of the second positioning pin are respectively embedded in the third positioning groove and the fourth positioning groove.

[0022] As a preferred technical solution of a capacitively coupled plasma processing device, the capacitively coupled plasma processing device further includes a protective outer ring, which is detachably connected to the bottom of the quartz ring.

[0023] As a preferred technical solution of a capacitively coupled plasma processing device, the capacitively coupled plasma processing device further includes a plurality of snap-fit ​​blocks, the snap-fit ​​blocks being connected to the bottom of the quartz ring, and the snap-fit ​​blocks being provided with snap-fit ​​protrusions;

[0024] The protective outer ring is provided with a plurality of snap-fit ​​parts at intervals along the circumference. The snap-fit ​​blocks and the snap-fit ​​parts correspond one to one. Each snap-fit ​​part includes a snap-fit ​​groove and a snap-fit ​​wall located above the snap-fit ​​groove. The snap-fit ​​wall is provided with a notch. The snap-fit ​​protrusion can move through the notch to the bottom of the snap-fit ​​wall. The protective outer ring is rotated so that the snap-fit ​​protrusion moves into the snap-fit ​​groove.

[0025] As a preferred technical solution for a capacitively coupled plasma treatment device, the spray block and the quartz ring are sealed together; and / or

[0026] The quartz ring and the support ring are sealed together; and / or

[0027] The inner electrode and the spray block are sealed together.

[0028] The beneficial effects of this utility model are as follows:

[0029] This invention provides a capacitively coupled plasma processing device. During processing, a gas supply source delivers process gas to a spray block. The process gas is discharged sequentially through spray holes and vents in the electrode assembly. As it flows through the electrode assembly, a high-frequency electric field is applied, causing the electrode assembly to interact with the process gas and generate a current between the electrodes. This ionizes the process gas, forming plasma. This plasma, operating at high energy, acts on the wafer surface for precise etching. This invention utilizes a quartz ring circumferentially arranged on the spray block. The quartz ring, made of high-purity quartz material, possesses a low coefficient of thermal expansion and excellent electrical insulation properties. This effectively isolates the electrode assembly from other metal components, preventing current leakage or short circuits, and ensuring the stability of the electric field within the plasma reaction region. This, in turn, guarantees the stability of the plasma reaction and the normal operation of the electrode assembly. It effectively constrains the plasma distribution area, preventing its disorderly diffusion to the reaction chamber wall, thus improving plasma stability and process controllability, expanding the process window, and improving etching uniformity. Simultaneously, it reduces the risk of corrosion and contamination of the chamber wall, extending the service life of internal reactor components. Furthermore, it achieves electrical isolation between key components, preventing current leakage and short circuits, and improving the overall safety and reliability of the system. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of this utility model and these drawings without creative effort.

[0031] Figure 1 This is a cross-sectional view of the capacitively coupled plasma processing device provided in a specific embodiment of this utility model;

[0032] Figure 2 This is a partial cross-sectional view of the capacitively coupled plasma processing device provided in a specific embodiment of this utility model.

[0033] Figure 3 This is a schematic diagram of the structure of the protective outer ring provided in a specific embodiment of this utility model;

[0034] Figure 4 This is a schematic diagram of the snap-fit ​​block provided in a specific embodiment of this utility model.

[0035] The markings in the image are as follows:

[0036] 1. Sprayer blocks;

[0037] 2. Electrode assembly; 21. Inner electrode; 22. Outer electrode;

[0038] 3. Quartz ring; 4. Support ring; 5. Top cover;

[0039] 6. Fastening assembly; 61. First retaining ring; 611. First overlapping part; 62. Second retaining ring; 621. Second overlapping part; 63. First fastening screw; 64. Second fastening screw; 65. Pressure block; 66. Insulating block; 67. Insulating gasket;

[0040] 7. First locating pin; 8. Second locating pin;

[0041] 9. Protective outer ring; 91. Snap-fit ​​wall; 92. Notch; 93. Snap-fit ​​groove;

[0042] 10. Snap-fit ​​block; 101. Snap-fit ​​protrusion;

[0043] 11. Heater; 12. Pressure plate; 13. First shielding coil; 14. Second shielding coil. Detailed Implementation

[0044] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.

[0045] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0046] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0047] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0048] like Figure 1 and Figure 2 As shown, this embodiment provides a capacitively coupled plasma processing device, which includes a spray block 1, an electrode assembly 2, a quartz ring 3, a support ring 4, and a top cover 5. The spray block 1 is connected to a gas supply source, and a spray hole is provided below the spray block 1. The electrode assembly 2 is connected to the bottom of the spray hole of the spray block 1, and the electrode assembly 2 is provided with a gas hole communicating with the spray hole. The quartz ring 3 is encircled by the spray block 1 and is used to support the spray block 1. The support ring 4 is encircled by the quartz ring 3 and is used to support the quartz ring 3. The top cover 5 is connected to the top of the support ring 4 and is located above the spray block 1.

[0049] During processing, the gas supply source delivers process gas to the spray block 1. The process gas is discharged sequentially through the spray holes and the vents of the electrode assembly 2. As it flows through the electrode assembly 2, a high-frequency electric field is applied through it. The electrode assembly 2 interacts with the process gas, generating a current between the electrodes, thereby ionizing the process gas and forming plasma. This plasma acts on the wafer surface in a high-energy state, performing precise etching. In this embodiment, a quartz ring 3 is circumferentially arranged on the spray block 1. The quartz ring 3 is made of high-purity quartz material, which has a low coefficient of thermal expansion and excellent electrical insulation properties. It can effectively isolate the electrode assembly 2 from other metal components, prevent current leakage or short circuit, and ensure the stability of the electric field within the plasma reaction area. This ensures the stability of the plasma reaction and the normal operation of the electrode assembly 2, effectively constrains the distribution area of ​​the plasma, prevents its disorderly diffusion to the reaction chamber wall, improves the stability and process controllability of the plasma, expands the process window, and improves etching uniformity. At the same time, it reduces the risk of corrosion and contamination of the chamber wall, extends the service life of the internal components of the reactor, and achieves electrical isolation between key components, avoiding current leakage and short circuit, thus improving the safety and reliability of the entire machine. In addition, by optimizing the structural design, the sealing performance and mechanical stability of the device are improved, enhancing its adaptability to harsh process environments such as high temperature. In this embodiment, the upper cover 5 is used to press the capacitively coupled plasma treatment device. After removing the upper cover 5, it is convenient to maintain and fix the internal components of the capacitively coupled plasma treatment device. The support ring 4 is used to support the entire capacitively coupled plasma treatment device.

[0050] Preferably, a first shielding coil 13 is disposed between the upper cover 5 and the support ring 4. The first shielding coil 13 is used to reduce the interference of radio frequency electromagnetic fields on surrounding components. The first shielding coil 13 generates a reverse magnetic field to cancel or weaken the radiation of radio frequency electric fields, thereby effectively shielding electromagnetic radiation and reducing the impact on other sensitive electronic components. The first shielding coil 13 is typically made of highly conductive materials (such as copper wire or silver wire), and its design takes into account the optimal shielding effect and installation space to ensure the stable operation of the internal electronic system of the device.

[0051] In this embodiment, a heater 11 is mounted on the side of the spray block 1 away from the electrode assembly 2. The heater 11 is used to heat the spray block 1 to control the temperature, thereby stabilizing the generation of plasma and improving the stability and uniformity of the etching process. The heater 11 is a thin-sheet mica heater, which is mounted on the spray block 1 via a pressure plate 12. A second shielding coil 14 is provided between the heater 11 and the spray block 1.

[0052] In this embodiment, the outer periphery of the spray block 1 is provided with a first stepped surface, and the inner ring of the quartz ring 3 is provided with a second stepped surface. The first stepped surface overlaps with the second stepped surface, enabling the quartz ring 3 to support the spray block 1. The outer ring of the quartz ring 3 is provided with a third stepped surface, and the inner ring of the support ring 4 is provided with a fourth stepped surface. The third stepped surface overlaps with the fourth stepped surface, enabling the support ring 4 to support the quartz ring 3.

[0053] Preferably, the electrode assembly 2 includes an inner electrode 21 and an outer electrode 22. The inner electrode 21 is connected to the side of the spray block 1 where the spray holes are provided, and the inner electrode 21 is provided with vents communicating with the spray holes. The outer electrode 22 is coaxially arranged around the outer periphery of the inner electrode 21. When only the inner electrode 21 is present, the density of the plasma generated in the center is greater than the density of the plasma at the edge. In this embodiment, the inner electrode 21 is located near the center, and the outer electrode 22 surrounds the inner electrode 21. The inner electrode 21 and the outer electrode 22 are connected to an RF power supply or a DC power supply to excite the reactive gas and generate plasma. The inner electrode 21 and the outer electrode 22 ensure a uniform distribution of the electric field within the reaction area, thereby improving the uniformity of the plasma and thus improving the accuracy and consistency of the etching and deposition processes. It should be noted that the inner electrode 21 is usually located at the center of the device, while the outer electrode 22 is arranged around its outer periphery. This design allows for a more uniform distribution of the electric field within the cavity. By adjusting the shape and size of the electrodes, the electric field can be optimized, resulting in more uniform plasma generation throughout the cavity and avoiding the concentrated or non-uniform electric field caused by relying on a single electrode configuration. A multi-electrode design (e.g., multiple inner electrodes 21 or multiple outer electrodes 22) can further reduce the intensification of local electric fields, increasing plasma stability and uniformity. The synergistic effect of multiple electrodes effectively disperses the electric field intensity, avoiding excessively concentrated electric field regions caused by a single electrode design, thereby improving the uniformity of plasma throughout the processing area. Even when the inner electrodes 21 and outer electrodes 22 are connected together, they can still be adjusted using different voltages.

[0054] Furthermore, the capacitively coupled plasma treatment device also includes a fastening assembly 6, which includes a first fixing ring 61 and a second fixing ring 62. The first fixing ring 61 is provided with an annular first overlapping portion 611, which is arranged around the inner electrode 21 and connected to the spray block 1. The inner electrode 21 overlaps with the first overlapping portion 611, thus fixing the inner electrode 21. The second fixing ring 62 is provided with an annular second overlapping portion 621, which is arranged around the outer electrode 22 and connected to the side of the first fixing ring 61 away from the spray block 1. The outer electrode 22 overlaps with the second overlapping portion 621, thus fixing the outer electrode 22. In this embodiment, the inner electrode 21 partially overlaps with the outer electrode 22, and the outer electrode 22 and the first fixing ring 61 jointly support the inner electrode 21.

[0055] In existing technologies, the connection between electrodes and backplates is mostly fixed by adhesives, which makes electrode disassembly and assembly very inconvenient, increasing equipment maintenance time and costs. Furthermore, under high-temperature conditions, adhesives are unreliable and prone to failure, leading to frequent equipment malfunctions and impacting production efficiency. To address these issues, the fastening assembly 6 also includes a first fastening screw 63 and a second fastening screw 64. The spray block 1 is provided with stepped holes, including a large-diameter hole and a small-diameter hole. The head of the first fastening screw 63 is polygonal, and the inner wall shape of the large-diameter hole matches the head shape of the first fastening screw 63. The first fixing ring 61 is provided with a through hole, and the shank of the second fastening screw 64 is provided with a threaded hole. The shank of the second fastening screw 64 passes through the through hole, the head of the first fastening screw 63 is embedded in the large-diameter hole, and the shank of the first fastening screw 63 passes through the small-diameter hole and is threaded into the threaded hole. During assembly, the shank of the first fastening screw 63 passes through the small-diameter hole, and the shank of the second fastening screw 64 passes through the through hole of the first retaining ring 61. When the second fastening screw 64 is tightened, the first fastening screw 63 will not rotate due to the limiting effect of the small-diameter hole and the head of the first fastening screw 63. This allows the shank of the first fastening screw 63 to be threaded into the threaded hole of the first fastening screw 63. In this embodiment, the first retaining ring 61 is connected to the spray block 1 through the cooperation of the first fastening screw 63 and the second fastening screw 64. Compared to adhesive bonding, this significantly improves the mechanical connection strength and stability of the electrode assembly 2. In this embodiment, the head of the first fastening screw 63 is square, and the first fastening screw 63 will not rotate under high temperature and high pressure conditions.

[0056] In this embodiment, the second fixing ring 62 can be connected to the bottom of the first fixing ring 61 by screws.

[0057] Furthermore, the fastening assembly 6 also includes a pressure block 65, which is sealed and pressed against the end of the stepped hole opposite to the first fixing ring 61. A first sealing ring is provided between the pressure block 65 and the end face of the stepped hole. The pressure block 65 can be connected to the spray block 1 by screws, thereby pressing the first sealing ring to form a first layer of seal, achieving a seal for the stepped hole. More preferably, the spray block 1 is sealed to the quartz ring 3, and a second sealing ring is provided between the spray block 1 and the quartz ring 3, forming a second layer of seal. And / or the quartz ring 3 and the support ring 4 are sealed to each other, and a third sealing ring is provided between the quartz ring 3 and the support ring 4, forming a third layer of seal. And / or the inner electrode 21 and the spray block 1 are sealed to each other, and a fourth sealing ring is provided between the inner electrode 21 and the spray block 1, forming a fourth layer of seal. A fifth sealing ring is provided at the bottom of the support ring 4. When the capacitively coupled plasma treatment device is installed in the cavity, the fifth sealing ring is located between the support ring 4 and the cavity, forming a fifth layer of seal. This embodiment uses five layers of sealing to prevent gas leakage, thus better protecting the equipment and personnel safety.

[0058] In this embodiment, the fastening assembly 6 further includes an insulating block 66 and an insulating washer 67. The insulating block 66 is disposed between the pressure block 65 and the head of the first fastening screw 63, and the insulating washer 67 is disposed between the head of the first fastening screw 63 and the stepped surface of the stepped hole. The insulating block 66 and the insulating washer 67 are used for connection isolation of the electrode assembly 2, ensuring insulation between components. In this embodiment, the insulating block 66 and the insulating washer 67 are typically made of a high-resistivity material to ensure the insulation of the electrode assembly 2 and prevent electrical interference.

[0059] Preferably, the capacitively coupled plasma treatment device further includes at least two first positioning pins 7, the spray block 1 is provided with a first positioning groove corresponding to the first positioning pin 7, the inner electrode 21 is provided with a second positioning groove corresponding to the first positioning pin 7, and the two ends of the first positioning pin 7 are respectively embedded in the first positioning groove and the second positioning groove; and / or the capacitively coupled plasma treatment device further includes at least two second positioning pins 8, the quartz ring 3 is provided with a third positioning groove corresponding to the second positioning pin 8, the support ring 4 is provided with a fourth positioning groove corresponding to the second positioning pin 8, and the two ends of the second positioning pin 8 are respectively embedded in the third positioning groove and the fourth positioning groove. The first positioning pins 7 and the second positioning pins 8 are used for directional positioning, improving the ease of assembly and assembly accuracy of the capacitively coupled plasma treatment device. The first positioning pins 7 and the second positioning pins 8 are made of highly corrosion-resistant materials.

[0060] Preferably, the capacitively coupled plasma treatment device further includes a protective outer ring 9, which is detachably connected to the bottom of the quartz ring 3. The protective outer ring 9 is used to protect the support ring 4, prolong the service life of the support ring 4, and prevent plasma from directly contacting the support ring 4, which serves as a support structure. In this embodiment, the protective outer ring 9 is made of high-purity quartz.

[0061] In this embodiment, as Figure 3 and Figure 4As shown, the capacitively coupled plasma processing device also includes multiple snap-fit ​​blocks 10, which are connected to the bottom of the quartz ring 3. Each snap-fit ​​block 10 has a snap-fit ​​protrusion 101. The protective outer ring 9 has multiple snap-fit ​​portions spaced circumferentially. Each snap-fit ​​block 10 corresponds to a snap-fit ​​portion. Each snap-fit ​​portion includes a slot 93 and a snap-fit ​​wall 91 located above the slot 93. The snap-fit ​​wall 91 has a notch 92, allowing the snap-fit ​​protrusion 101 to move through the notch 92 to below the snap-fit ​​wall 91. The protective outer ring 9 is rotated to move the snap-fit ​​protrusion 101 into the slot 93. During assembly, the snap-fit ​​blocks 10 are connected to the bottom of the quartz ring 3 with screws. The snap-fit ​​protrusion 101 is aligned with the notch 92, and then the protective outer ring 9 is moved. The snap-fit ​​protrusion 101 moves through the notch 92 to below the snap-fit ​​wall 91. Finally, the protective outer ring 9 is screwed on, thus fixing the protective outer ring 9. This greatly simplifies installation and maintenance while meeting sealing and other operating conditions. The snap-fit ​​block 10 is made of polytetrafluoroethylene (PTFE), which meets the insulation requirements of the capacitively coupled plasma processing device.

[0062] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. A capacitively coupled plasma processing device, characterized in that, include: A spray block (1) is connected to an air supply source, and a spray hole is provided below the spray block (1); An electrode assembly (2) is connected below the spray hole of the spray block (1), and the electrode assembly (2) is provided with an air hole communicating with the spray hole; A quartz ring (3) is disposed around the spray block (1), and the quartz ring (3) is used to support the spray block (1); A support ring (4) is disposed around the quartz ring (3), and the support ring (4) is used to support the quartz ring (3); The top cover (5) is connected to the top of the support ring (4) and is located above the spray block (1).

2. The capacitively coupled plasma processing apparatus according to claim 1, characterized in that, The electrode assembly (2) includes an inner electrode (21) and an outer electrode (22). The inner electrode (21) is connected to the side of the spray block (1) where the spray hole is provided, and the inner electrode (21) is provided with an air hole communicating with the spray hole. The outer electrode (22) is coaxially arranged around the outer periphery of the inner electrode (21).

3. The capacitively coupled plasma processing apparatus according to claim 2, characterized in that, The capacitively coupled plasma treatment device further includes a fastening assembly (6), which includes a first fixing ring (61) and a second fixing ring (62). The first fixing ring (61) is provided with an annular first overlapping portion (611). The first fixing ring (61) is circumferentially disposed on the inner electrode (21) and connected to the spray block (1). The inner electrode (21) overlaps on the first overlapping portion (611). The second fixing ring (62) is provided with an annular second overlapping part (621). The second fixing ring (62) is circumferentially disposed on the outer electrode (22) and connected to the side of the first fixing ring (61) away from the spray block (1). The outer electrode (22) overlaps on the second overlapping part (621).

4. The capacitively coupled plasma processing apparatus according to claim 3, characterized in that, The fastening assembly (6) further includes a first fastening screw (63) and a second fastening screw (64). The spray block (1) is provided with a stepped hole, which includes a large-diameter hole and a small-diameter hole. The head of the first fastening screw (63) is polygonal. The inner wall shape of the large-diameter hole matches the head shape of the first fastening screw (63). The first fixing ring (61) is provided with a through hole. The shank of the second fastening screw (64) is provided with a threaded hole. The second fastening screw (64) passes through the through hole. The head of the first fastening screw (63) is embedded in the large-diameter hole, and the shank of the first fastening screw (63) passes through the small-diameter hole and is threaded to the threaded hole.

5. The capacitively coupled plasma processing apparatus according to claim 4, characterized in that, The fastening assembly (6) further includes a pressure block (65), which is sealed and pressed against the end of the stepped hole away from the first fixing ring (61).

6. The capacitively coupled plasma processing apparatus according to claim 5, characterized in that, The fastening assembly (6) further includes an insulating block (66) and an insulating washer (67). The insulating block (66) is disposed between the pressure block (65) and the head of the first fastening screw (63), and the insulating washer (67) is disposed between the head of the first fastening screw (63) and the stepped surface of the stepped hole.

7. The capacitively coupled plasma processing apparatus according to claim 2, characterized in that, The capacitively coupled plasma processing device further includes at least two first positioning pins (7), the spray block (1) is provided with a first positioning groove corresponding to the first positioning pin (7), and the inner electrode (21) is provided with a second positioning groove corresponding to the first positioning pin (7). The two ends of the first positioning pin (7) are respectively embedded in the first positioning groove and the second positioning groove; and / or The capacitively coupled plasma processing device further includes at least two second positioning pins (8), the quartz ring (3) is provided with a third positioning groove corresponding to the second positioning pin (8), the support ring (4) is provided with a fourth positioning groove corresponding to the second positioning pin (8), and the two ends of the second positioning pin (8) are respectively embedded in the third positioning groove and the fourth positioning groove.

8. The capacitively coupled plasma processing apparatus according to claim 2, characterized in that, The capacitively coupled plasma processing device also includes a protective outer ring (9), which is detachably connected to the bottom of the quartz ring (3).

9. The capacitively coupled plasma processing apparatus according to claim 8, characterized in that, The capacitively coupled plasma processing device further includes a plurality of snap-fit ​​blocks (10), the snap-fit ​​blocks (10) being connected to the bottom of the quartz ring (3), and the snap-fit ​​blocks (10) being provided with snap-fit ​​protrusions (101); The protective outer ring (9) is provided with a plurality of snap-fit ​​parts at intervals along the circumference. The snap-fit ​​block (10) corresponds to the snap-fit ​​part. The snap-fit ​​part includes a snap-fit ​​groove (93) and a snap-fit ​​wall (91) located above the snap-fit ​​groove (93). The snap-fit ​​wall (91) is provided with a notch (92). The snap-fit ​​protrusion (101) can move through the notch (92) to the bottom of the snap-fit ​​wall (91). The protective outer ring (9) is rotated so that the snap-fit ​​protrusion (101) moves into the snap-fit ​​groove (93).

10. The capacitively coupled plasma processing apparatus according to claim 8, characterized in that, The spray block (1) is sealed to the quartz ring (3); and / or A sealed connection is formed between the quartz ring (3) and the support ring (4); and / or The inner electrode (21) and the spray block (1) are sealed together.

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