Wafer manufacturing device

Abstract

The embodiment of the utility model provides a wafer manufacturing device, and the device comprises a reaction cavity, the top of which is of a dome structure; a radio frequency side coil surrounding the outer wall of the dome structure, wherein the radio frequency side coil is used for generating high-density plasma in the reaction cavity; wherein the radio frequency side coil is a hollow pipeline; the adapter and the radio frequency side coil are of an integrated structure, and the adapter is used for being connected with a cooling liquid pipeline; and the cooling liquid pipeline is used for introducing cooling liquid into the radio frequency side coil, so that heat dissipation of the radio frequency side coil is realized. According to the embodiment of the invention, the risk of machine shutdown caused by liquid leakage can be reduced, so that the performance of the wafer is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a wafer manufacturing apparatus. Background Technology

[0002] Plasma technology plays a crucial role in modern semiconductor manufacturing, with typical applications including Chemical Dry Etching (CDE), Ion-Assisted Etching (IAE), and Plasma-Enhanced Chemical Vapor Deposition (PECVD). These processes typically introduce radio frequency power through a high-density plasma (HDP) RF side coil, transferring energy to the reaction chamber to generate a high-density plasma within it for tasks such as material removal, surface treatment, or thin film deposition.

[0003] However, the performance of the wafers currently being produced needs to be improved. Utility Model Content

[0004] In view of this, embodiments of this application provide a wafer manufacturing apparatus to improve device performance.

[0005] To achieve the above objectives, the embodiments of this application provide the following technical solutions.

[0006] This application provides a wafer manufacturing apparatus, including:

[0007] The reaction chamber has a dome-shaped top.

[0008] A radio frequency (RF) side coil surrounds the outer wall of the dome structure, the RF side coil being used to generate high-density plasma inside the reaction chamber; wherein, the RF side coil is a hollow tube;

[0009] An adapter that is an integral part of the radio frequency side coil is used to connect a coolant pipe; the coolant pipe is used to introduce coolant into the radio frequency side coil to dissipate heat from the radio frequency side coil.

[0010] Optionally, the adapter is L-shaped.

[0011] Optionally, the adapter is formed by bending it with a pipe bending tool.

[0012] Optionally, the angle range of the adapter's bend is 85 degrees to 95 degrees.

[0013] Optionally, the material of the radio frequency side coil is copper or a copper alloy.

[0014] Optionally, the adapter is made of the same material as the RF side coil.

[0015] Optionally, a sealing device is provided at the connection between the adapter and the coolant pipe.

[0016] Optionally, the sealing device is a sealing ring or a sealing gasket.

[0017] Optional, also includes:

[0018] An RF power source connected to the RF side coil, the RF power source being used to provide RF energy to the RF side coil.

[0019] Optionally, the dome structure may be made of ceramic.

[0020] Compared with the prior art, the technical solution of this application has the following advantages:

[0021] This application provides a wafer manufacturing apparatus, including: a reaction chamber, the top of which is a dome structure; a radio frequency (RF) side coil surrounding the outer wall of the dome structure, the RF side coil being used to generate high-density plasma inside the reaction chamber; wherein the RF side coil is a hollow pipe; an adapter integrally formed with the RF side coil, the adapter being used to connect a coolant pipe; the coolant pipe being used to introduce coolant into the RF side coil to dissipate heat from the RF side coil.

[0022] As can be seen, the wafer manufacturing apparatus provided in this application embodiment connects to the coolant pipeline via an adapter that is an integral part of the radio frequency side coil. This avoids the leakage that occurs during operation due to gaps in the adapter caused by thermal expansion and contraction when connecting to the coolant pipeline via a traditional adapter. This reduces the risk of machine downtime caused by leakage and improves wafer performance. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of a wafer fabrication apparatus.

[0025] Figure 2 This is a schematic diagram of an optional structure of a wafer manufacturing apparatus provided in an embodiment of this application. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0027] As the background technology indicates, plasma technology plays a crucial role in modern semiconductor manufacturing, with typical applications including Chemical Dry Etching (CDE), Ion-Assisted Etching (IAE), and Plasma-Enhanced Chemical Vapor Deposition (PECVD). These processes typically introduce radio frequency power through a high-density plasma (HDP) RF side coil, transferring energy to the reaction chamber to generate a high-density plasma within it for material removal, surface treatment, or thin film deposition. However, the performance of the resulting wafers currently requires improvement.

[0028] For ease of understanding, please refer to Figure 1 An exemplary schematic diagram of a wafer manufacturing apparatus is shown, such as Figure 1 As shown, the outer wall of the dome structure 11 is surrounded by an RF side coil 12. The functions of the RF side coil 12 include:

[0029] (1) An electric field is formed by passing RF power (Radio Frequency power) to dissociate the gas into plasma and continuously maintain the plasma state. By precisely controlling the RF power and frequency passing through the RF side coil, the ion energy and plasma density can be adjusted, thereby optimizing process parameters and improving the yield and performance of device manufacturing.

[0030] (2) The radio frequency side coil 12 is a tubular structure, and coolant can be introduced into it to dissipate heat from the radio frequency side coil. Specifically, conversion connectors 13 can be provided at both ends of the radio frequency side coil to connect with coolant pipes, so as to introduce coolant into the radio frequency side coil 12.

[0031] The inventors discovered that the dome structure 11 requires continuous RF power supply during wafer manufacturing and maintenance, resulting in the generation of a large amount of heat. When cooling the RF side coil, the continuous temperature rise and fall can cause gaps to appear in the conversion connector 13 due to thermal expansion and contraction, leading to leakage during operation. This can cause machine downtime or even product scrapping, severely impacting wafer performance.

[0032] In view of this, embodiments of this application provide a wafer manufacturing apparatus, comprising: a reaction chamber, the top of which is a dome structure; a radio frequency (RF) side coil surrounding the outer wall of the dome structure, the RF side coil being used to generate high-density plasma inside the reaction chamber; wherein the RF side coil is a hollow pipe; an adapter integrally formed with the RF side coil, the adapter being used to connect a coolant pipe; the coolant pipe being used to introduce coolant into the RF side coil to dissipate heat from the RF side coil.

[0033] As can be seen, the wafer manufacturing apparatus provided in this application embodiment connects to the coolant pipeline via an adapter that is an integral part of the radio frequency side coil. This avoids the leakage that occurs during operation due to gaps in the adapter caused by thermal expansion and contraction when connecting to the coolant pipeline via a traditional adapter. This reduces the risk of machine downtime caused by leakage and improves wafer performance.

[0034] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0035] refer to Figure 2 , Figure 2 This is a schematic diagram of an optional structure of a wafer manufacturing apparatus provided in an embodiment of this application. For example... Figure 2 As shown, the wafer manufacturing apparatus may include:

[0036] The reaction chamber has a dome structure 21 at its top.

[0037] The dome structure 21 effectively reduces local concentration differences of plasma or reactive gas within the reaction chamber by minimizing right-angled or planar areas. For example, in plasma etching processes, the dome design allows for a more uniform ion density distribution, avoiding inconsistent etching rates caused by edge effects. The material of the dome structure 21 can be, for example, ceramic. Ceramic materials (e.g., alumina, aluminum nitride, etc.) can withstand temperatures above 1600°C, and the dome structure will not deform or crack due to thermal expansion during high-temperature processes such as plasma etching or chemical vapor deposition.

[0038] A radio frequency (RF) side coil 22 surrounds the outer wall of the dome structure 21. The RF side coil 22 is used to generate high-density plasma inside the reaction chamber. The RF side coil 22 is a hollow tube.

[0039] The radio frequency (RF) side coil 22 can generate an electric field inside the reaction chamber by transmitting RF power. This electric field can dissociate (or ionize) the gas molecules inside the chamber, converting them into a plasma state. Plasma plays an important role in semiconductor manufacturing processes, such as etching and deposition.

[0040] The radio frequency side coil 22 is a hollow pipe for introducing coolant. During the flow of the coolant, it absorbs the heat generated by the radio frequency side coil, thereby carrying the heat away from the radio frequency side coil and achieving the purpose of heat dissipation. This prevents the radio frequency side coil from experiencing performance degradation or damage due to overheating, ensuring its normal operation and extending its service life.

[0041] In an alternative implementation, the material of the RF side coil 22 may be, for example, copper or a copper alloy. Copper or copper alloys typically have good machinability and weldability, facilitating the integrated bend design of the adapter 23, thereby improving overall product quality and process consistency. Furthermore, copper or copper alloys offer superior high-temperature resistance and corrosion resistance, ensuring the stability of the adapter 23 during wafer fabrication equipment operation.

[0042] An adapter 23, integrally formed with the RF-side coil 22, is used to connect to a coolant pipe. The coolant pipe allows coolant to flow into the RF-side coil 22 for heat dissipation. In this embodiment, by connecting the adapter, which is integrally formed with the RF-side coil, to the coolant pipe, the traditional method of using a conversion adapter to connect to the coolant pipe avoids gaps caused by thermal expansion and contraction, leading to leakage during operation. This reduces the risk of machine downtime due to leakage and ultimately improves wafer performance.

[0043] In an optional implementation, the adapter 23 is L-shaped. An L-shaped adapter allows for rapid directional changes within a limited space, avoiding spatial conflicts or excessively long pipes / lines caused by straight connections. In a specific implementation, the adapter 23 can be formed by bending using a pipe bending tool. The pipe bending tool applies external force to cause plastic deformation of the pipe at a specific location, thereby forming the desired L-shaped structure.

[0044] The angle range of the adapter corner is, for example, 85 degrees to 95 degrees. In fluid transmission systems, the corner angle has a significant impact on the fluid flow state. If the angle is too small, turbulence and eddies are easily generated at the corner, increasing pressure loss and energy consumption; if the angle is too large, it cannot meet the spatial layout requirements. Therefore, the angle range of the adapter corner in this application is 85 degrees to 95 degrees.

[0045] It should be noted that the pipe bending tool can be designed and adjusted according to the material, size and bending requirements of the pipe to ensure that the bent adapter meets the design standards.

[0046] To ensure a tight connection between the adapter and the coolant pipe, a sealing device can be provided at the connection point. This sealing device can be a sealing ring or a sealing gasket. For example, when a sealing ring is installed at the connection point and compressed, its elastic deformation fills the microscopic gaps between the connecting surfaces, forming a sealing barrier and preventing coolant leakage. A sealing gasket is placed between the connecting surfaces of the adapter and the coolant pipe; pressure applied by fasteners such as bolts causes the gasket to deform, filling any unevenness in the connecting surfaces and achieving a seal.

[0047] In this application, the adapter 23 and the radio frequency side coil 22 are an integral structure, so the material of the adapter is the same as that of the radio frequency side coil, for example, it can be copper or copper alloy.

[0048] In an optional implementation, the wafer fabrication apparatus may further include: a radio frequency (RF) power source connected to the RF-side coil, the RF power source being used to provide RF energy to the RF-side coil. The RF power source is connected to the RF-side coil via a dedicated RF transmission line (such as a coaxial cable), forming a complete energy transmission channel. When the RF energy output by the RF power source is transmitted to the RF-side coil through the RF transmission line, an alternating electromagnetic field is generated around the coil. According to the principle of electromagnetic induction, this alternating electromagnetic field induces a current inside the reaction chamber, thereby exciting gas molecules to ionize and form plasma.

[0049] As can be seen, the wafer manufacturing apparatus provided in this application embodiment connects to the coolant pipeline via an adapter that is an integral part of the radio frequency side coil. This avoids the leakage that occurs during operation due to gaps in the adapter caused by thermal expansion and contraction when connecting to the coolant pipeline via a traditional adapter. This reduces the risk of machine downtime caused by leakage and improves wafer performance.

[0050] The foregoing describes multiple embodiment schemes provided by the embodiments of this application. The optional methods described in each embodiment scheme can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment schemes. These can all be considered as the embodiment schemes disclosed and published by the embodiments of this application.

[0051] While the embodiments disclosed above are described in this application, this application is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this application; therefore, the scope of protection of this application should be determined by the scope defined in the claims.

Claims

1. A wafer manufacturing apparatus, characterized in that, include: The reaction chamber has a dome-shaped top. A radio frequency (RF) side coil surrounds the outer wall of the dome structure, the RF side coil being used to generate high-density plasma inside the reaction chamber; wherein, the RF side coil is a hollow tube; An adapter that is an integral part of the radio frequency side coil is used to connect a coolant pipe; the coolant pipe is used to introduce coolant into the radio frequency side coil to dissipate heat from the radio frequency side coil.

2. The wafer manufacturing apparatus according to claim 1, characterized in that, The adapter is L-shaped.

3. The wafer manufacturing apparatus according to claim 2, characterized in that, The adapter is formed by bending it with a pipe bending tool.

4. The wafer manufacturing apparatus according to claim 2, characterized in that, The angle range of the adapter's bend is 85 degrees to 95 degrees.

5. The wafer manufacturing apparatus according to claim 1, characterized in that, The material of the radio frequency side coil is copper or a copper alloy.

6. The wafer manufacturing apparatus according to claim 4, characterized in that, The adapter is made of the same material as the RF side coil.

7. The wafer manufacturing apparatus according to claim 1, characterized in that, A sealing device is provided at the connection between the adapter and the coolant pipe.

8. The wafer manufacturing apparatus according to claim 7, characterized in that, The sealing device is a sealing ring or a sealing gasket.

9. The wafer manufacturing apparatus according to claim 7, characterized in that, Also includes: An RF power source connected to the RF side coil, the RF power source being used to provide RF energy to the RF side coil.

10. The wafer manufacturing apparatus according to claim 1, characterized in that, The dome structure is made of ceramic.

Images