S-band and C-band broadband high-power synthesis device

Abstract

The utility model discloses an S-band and C-band broadband high-power synthesis device, which comprises a front-stage power distribution module, at least two amplification modules and a rear-stage power synthesis module, the pre-stage output end is connected with the input ends of the amplification modules, and the output ends of the amplification modules are connected to the post-stage input end in tandem; the amplification module comprises an input T-junction micro-strip power divider, a 90-degree hybrid bridge, a gallium nitride power amplification chip, a matched load and an output T-junction micro-strip power divider, isolation ports of the 90-degree hybrid bridge are connected with the matched load, each stage of power divider is integrated with a quarter-wavelength impedance conversion node, and radio frequency and power supply circuits in the amplification module are arranged in a stacked manner; according to the device, ultra-wideband high-efficiency power synthesis is realized through impedance matching and unbalanced energy directional absorption, and the device has the advantages of thermal management optimization, phase consistency guarantee, modular expandability and maintainability.

Description

Technical Field

[0001] This utility model relates to the field of radio frequency microwave technology, specifically to a broadband high-power combining device for S and C bands. Background Technology

[0002] The S-band (2-4 GHz) and C-band (4-8 GHz) are the core operating frequency bands for systems such as radar, satellite communications, and electronic warfare. These applications place stringent requirements on the output power (often hundreds of watts or more), bandwidth (often covering one or more octaves), and efficiency of radio frequency power sources. Currently, while solid-state power amplifier chips based on gallium nitride (GaN) and other technologies have advantages in bandwidth and efficiency, their single-chip output power is still insufficient to directly meet the peak power requirements of the system. Therefore, employing power combining technology to superimpose the output energy of multiple amplifier units has become an inevitable technical path to achieve high-power output.

[0003] However, achieving efficient and stable high-power combining over such a wide frequency range as the S and C bands presents several key challenges for existing technologies: First, existing power divider impedance structures typically employ a uniform design (e.g., using the same type of impedance transformation segment throughout the system), making it difficult to simultaneously meet the dual requirements of system-level broadband matching and module-level compact integration: the system input / output terminals require ultra-wideband matching, while the internal modules require high-density layout. This contradiction leads to deterioration of standing wave ratios and decreased combining efficiency in the 2-8 GHz band. Second, stacking a large number of amplifier chips to combine high power can cause heat dissipation problems, and heat concentration may damage chip reliability. At the same time, electromagnetic coupling interference between multiple high-power RF circuits is also more significant. In addition, traditional single-cavity integrated architectures have inherent limitations in terms of maintainability and power scalability; local failures require complete replacement, and power expansion is not flexible enough.

[0004] In summary, given the application characteristics of the S and C bands, there is an urgent need for an innovative power combining device. This device not only needs excellent broadband matching characteristics and a low-loss combining network to ensure combining efficiency, but also needs to solve the problems of concentrated heat dissipation and electromagnetic interference under high power to ensure long-term stable operation. Furthermore, a modular design will bring significant value to system maintenance and power expansion. This is precisely the core problem that this invention aims to solve. Utility Model Content

[0005] The purpose of this utility model is to overcome the shortcomings of the prior art and provide an S-C band broadband high-power combining device, including a pre-stage power distribution module, at least two amplification modules and a post-stage power combining module. Each amplification module includes an input power distribution network, multiple power amplification chips and an output power combining network. The input terminal of the input power distribution network of each amplification module is connected to one output terminal of the pre-stage power distribution module, and the output terminal of the output power combining network of each amplification module is connected to one input terminal of the post-stage power combining module.

[0006] The pre-stage power distribution module includes a pre-stage T-junction microstrip power divider, the post-stage power combining module includes a post-stage T-junction microstrip power divider, the input power distribution network includes an input T-junction microstrip power divider, and the output power combining network includes an output T-junction microstrip power divider. The impedance transformation sections of the pre-stage T-junction microstrip power divider, the input T-junction microstrip power divider, the output T-junction microstrip power divider, and the post-stage T-junction microstrip power divider all include quarter-wavelength impedance transformation sections.

[0007] Preferably, each input T-junction microstrip power divider has at least two output terminals, and the input power distribution network of each amplification module further includes at least two input 90° hybrid bridges. Each output terminal of the input T-junction microstrip power divider is connected to the input terminal of one of the input 90° hybrid bridges, and the two output terminals of each input 90° hybrid bridge are connected to the input terminals of two power amplifier chips. Similarly, each output T-junction microstrip power divider has at least two input terminals, and the output power combining network of each amplification module further includes at least two output 90° hybrid bridges. The two input terminals of each output 90° hybrid bridge are connected to the output terminals of two power amplifier chips, and the output terminals of each output 90° hybrid bridge are connected to the input terminals of the output T-junction microstrip power divider.

[0008] Preferably, each of the input 90° hybrid bridges and each of the output 90° hybrid bridges has a matching load connected to its isolation port.

[0009] Preferably, the pre-amplifier power distribution module is connected to each of the amplification modules, and each of the amplification modules is connected to the post-amplifier power combining module via coaxial connectors.

[0010] Preferably, the front-stage T-junction microstrip power divider and the rear-stage T-junction microstrip power divider have the same structure, and the input T-junction microstrip power divider and the output T-junction microstrip power divider have the same structure.

[0011] Preferably, all of the power amplifier chips are gallium nitride high electron mobility transistor chips.

[0012] Preferably, in each amplification module, there are two input 90° hybrid bridges and two output 90° hybrid bridges, and four power amplifier chips.

[0013] The beneficial effects of this utility model are: 1. Full-link impedance coordinated matching: This utility model integrates a quarter-wavelength impedance transformation section in the full-link T-junction microstrip power divider of the system's front-end power distribution module, the amplification module, and the back-end power combining module. This effectively improves the matching limitations of traditional structures in ultra-wideband scenarios and achieves systematic coordination of the impedance characteristics of the system's input / output terminals and the amplification module's internal impedance characteristics. It can simultaneously meet the dual requirements of wideband matching performance and compact layout within the module.

[0014] 2. Directional Energy Management in the Synthesis Path: Through the synergistic effect of the input / output 90° hybrid bridge in the amplification module, the matched load connected to its isolation port, and the impedance matching structure of the full-link power divider, unbalanced energy in the multi-path synthesis process can be directionally absorbed, effectively suppressing the accumulation of reflected signals in multi-channel power synthesis, and significantly improving signal stability and synthesis efficiency under high-power conditions.

[0015] 3. Symmetry Guarantee of Power Distribution-Combination Path: By adopting a mirror-symmetric design with identical structures for the front-stage T-junction microstrip power divider and the rear-stage T-junction microstrip power divider, and identical structures for the input and output T-junction microstrip power dividers within the amplification module, phase deviation sources in power distribution and combination paths are eliminated at the physical level, ensuring phase consistency of multi-channel signal combination and further guaranteeing power combination efficiency.

[0016] 4. Modular Engineering Advantages: It adopts an independent cavity modular architecture for front-end power distribution, amplification, and power synthesis. The modules are interconnected through coaxial connectors, which can realize physical isolation of faulty modules and quick replacement and maintenance. At the same time, the modular design supports flexible expansion of output power by increasing or decreasing the number of amplification modules, which greatly improves the engineering applicability and maintainability of the device. Attached Figure Description

[0017] Figure 1 This is an overall architecture diagram of an S-C band broadband high-power combining device.

[0018] Figure 2 This is a schematic diagram of a specific embodiment of the S-C band broadband high-power combining device of this utility model;

[0019] Figure 3 This is a schematic diagram of the impedance transformation section microstrip structure of the front-stage T-junction microstrip power divider and the rear-stage T-junction microstrip power divider in this utility model;

[0020] Figure 4This is a schematic diagram of the impedance transformation section microstrip structure of the input T-junction microstrip power divider and the output T-junction microstrip power divider in this utility model.

[0021] Figure Labels

[0022] AM1 is the first amplification module, and AM2 is the second amplification module; D1 is the pre-amplifier T-junction microstrip power divider, D2 is the input T-junction microstrip power divider, D2a is the first input T-junction microstrip power divider, D2b is the second input T-junction microstrip power divider, D3 is the output T-junction microstrip power divider, D3a is the first output T-junction microstrip power divider, D3b is the second output T-junction microstrip power divider, and D4 is the post-amplifier T-junction microstrip power divider; H1a is the first input 90° hybrid bridge, H2a is the second input 90° hybrid bridge, H1b is the third input 90° hybrid bridge, and H2b is the fourth input 90° hybrid bridge; C1a is the first output 90° hybrid bridge, and C2a is the second output 90° hybrid bridge. The hybrid bridge consists of three components: C1b is the third output 90° hybrid bridge, and C2b is the fourth output 90° hybrid bridge; PA1a is the first power amplifier chip, PA2a is the second power amplifier chip, PA3a is the third power amplifier chip, PA4a is the fourth power amplifier chip, PA1b is the fifth power amplifier chip, PA2b is the sixth power amplifier chip, PA3b is the seventh power amplifier chip, and PA4b is the eighth power amplifier chip; L1a is the first matching load, L2a is the second matching load, L3a is the third matching load, L4a is the fourth matching load, L1b is the fifth matching load, L2b is the sixth matching load, L3b is the seventh matching load, and L4b is the eighth matching load. Detailed Implementation

[0023] The technical solution of this utility model is described in further detail below with reference to the accompanying drawings, but the scope of protection of this utility model is not limited to the following description.

[0024] The features and performance of this utility model will be further described in detail below with reference to the embodiments.

[0025] Example 1

[0026] like Figure 1 As shown, an S-C band broadband high-power combining device includes a pre-stage power distribution module, at least two amplification modules, and a post-stage power combining module. Each amplification module includes an input power distribution network, multiple power amplification chips, and an output power combining network. The input terminal of the input power distribution network of each amplification module is connected to one output terminal of the pre-stage power distribution module, and the output terminal of the output power combining network of each amplification module is connected to one input terminal of the post-stage power combining module.

[0027] The pre-stage power distribution module includes a pre-stage T-junction microstrip power divider D1, the post-stage power combining module includes a post-stage T-junction microstrip power divider D4, the input power distribution network includes an input T-junction microstrip power divider D2, and the output power combining network includes an output T-junction microstrip power divider D3. The impedance transformation sections of the pre-stage T-junction microstrip power divider D1, the input T-junction microstrip power divider D2, the output T-junction microstrip power divider D3, and the post-stage T-junction microstrip power divider D4 all include a quarter-wavelength impedance transformation section.

[0028] This embodiment achieves full-link impedance matching across the entire 2-8GHz ultra-wideband range of the S and C bands by integrating a quarter-wavelength impedance transformation section through a unified design of a full-link T-junction microstrip power divider. This ensures broadband matching performance of power distribution and combining throughout the entire path. At the same time, the three-stage modular architecture of front-end distribution, amplification, and back-end combining provides basic architectural support for flexible power expansion and standardized implementation of the device.

[0029] Example 2

[0030] This embodiment is based on Embodiment 1 and is described in detail with an implementation that includes two amplification modules (i.e., the first amplification module AM1 and the second amplification module AM2).

[0031] like Figure 2 As shown, the two output terminals of the pre-amplifier power distribution module are connected to the input terminals of the first amplifier module AM1 and the second amplifier module AM2, and the input terminal of the post-amplifier power combining module is connected to the output terminals of the first amplifier module AM1 and the second amplifier module AM2.

[0032] The front-end power distribution module includes a front-end T-junction microstrip power divider D1, and the rear-end power combining module includes a rear-end T-junction microstrip power divider D4.

[0033] The first amplification module AM1 includes an input power distribution network, two power amplifier chips, and an output power combining network. The input power distribution network includes a first input T-junction microstrip power divider D2a, and the output power combining network includes a first output T-junction microstrip power divider D3a.

[0034] The second amplification module AM2 also includes an input power distribution network, two power amplifier chips, and an output power combining network. The input power distribution network includes a second input T-junction microstrip power divider D2b, and the output power combining network includes a second output T-junction microstrip power divider D3b.

[0035] The connection relationship is as follows: the two output terminals of the front-end T-junction microstrip power divider D1 are respectively connected to the input terminals of the first input T-junction microstrip power divider D2a and the input terminals of the second input T-junction microstrip power divider D2b;

[0036] Within the first amplification module AM1, the two output terminals of the first input T-junction microstrip power divider D2a are respectively connected to the input terminals of two power amplifier chips, and the output terminals of the two power amplifier chips are respectively connected to the two input terminals of the first output T-junction microstrip power divider D3a.

[0037] like Figure 2 As shown, the internal connection relationship of the second amplification module is symmetrical with that of the first amplification module AM1;

[0038] The output terminals of the first output T-junction microstrip power divider D3a and the second output T-junction microstrip power divider D3b are respectively connected to the two input terminals of the subsequent T-junction microstrip power divider D4.

[0039] The structures of the pre-stage T-junction microstrip power divider D1 and the post-stage T-junction microstrip power divider D4 are as follows: Figure 3 As shown; the structure of the input T-junction microstrip power divider D2 (i.e., the first input T-junction microstrip power divider D2a and the second input T-junction microstrip power divider D2b) and the output T-junction microstrip power divider D3 (i.e., the first output T-junction microstrip power divider D3a and the second output T-junction microstrip power divider D3b) is as follows. Figure 4 As shown.

[0040] All of the T-junction microstrip power dividers include a quarter-wavelength impedance transformation section, which can jointly ensure port matching performance in the 2-8GHz frequency band. The specific routing of each power divider can be adaptively bent and adjusted according to the cavity space constraints of its module, while fully retaining the core structure of the quarter-wavelength impedance transformation section.

[0041] Based on the core design principles of the dual amplification module described in this embodiment, the number of amplification modules can be flexibly expanded to three or more according to actual output power requirements without modifying the internal core structure of the amplification modules. Only the cascaded structure of the pre-stage and post-stage T-junction microstrip power dividers needs to be adapted accordingly. Specific implementation details are as follows:

[0042] When expanded to N (N is a positive integer greater than or equal to 2, and N is an integer power of 2) amplification modules, the front-stage T-junction microstrip power divider of the front-stage power distribution module adopts a multi-stage cascaded T-junction microstrip power divider, which achieves a power distribution of 1 to N by symmetrically cascading multiple single-stage 1-to-2 T-junction units; the rear-stage T-junction microstrip power divider of the rear-stage power combining module adopts an N-in-1 multi-stage cascaded T-junction microstrip power divider, which has a mirror symmetrical structure with the front-stage T-junction microstrip power divider.

[0043] Each single-stage T-junction unit of the above-mentioned multi-stage cascaded T-junction microstrip power divider retains the core structure of the quarter-wavelength impedance transformation section consistent with the dual-module scheme of this embodiment, and the electrical length of the microstrip line of each branch is completely equal, which ensures the phase consistency of each distributed and synthesized signal from the physical structure.

[0044] All extended amplification modules have the same connection relationship, structural parameters, and electrical performance as the first amplification module AM1 and the second amplification module AM2 in this embodiment, ensuring that the amplitude and phase characteristics of each amplification link are consistent.

[0045] The N output terminals of the pre-stage T-junction microstrip power divider are connected one-to-one with the input terminals of the N amplification modules, and the output terminals of the N amplification modules are connected one-to-one with the N input terminals of the post-stage T-junction microstrip power divider. The electrical lengths of all interconnection paths are exactly equal to avoid introducing additional phase deviations.

[0046] Taking the expansion implementation of 4 amplification modules as an example, the front-stage T-junction microstrip power divider adopts a two-stage cascaded 1-to-4 structure: the first stage is a single-stage T-junction that divides the input signal into 2 paths; the second stage is two parallel single-stage T-junctions that further divide each signal into 2 paths, ultimately achieving 4 equal-amplitude and in-phase outputs. The rear-stage T-junction microstrip power divider adopts a two-stage cascaded 4-in-1 structure, mirror-symmetrical to the front-stage T-junction microstrip power divider. The 4 amplification modules are arranged in a symmetrical matrix. The 4 output branches of the front-stage 1-to-4 power divider have completely identical electrical lengths and are respectively connected to the input terminals of the 4 amplification modules. The output terminals of the 4 amplification modules are respectively connected to the 4 input branches of the rear-stage 4-in-1 power divider, and the 4 input branches of the rear-stage T-junction microstrip power divider have completely identical electrical lengths. The internal structure of the 4 amplification modules is exactly the same as that of the amplification modules in the dual-module scheme of this embodiment, and no modifications are required. Based on this expansion method, the output power can be linearly expanded while maintaining the broadband matching performance of the 2-8GHz full-band. At the same time, all the advantages of the original modular architecture can be retained.

[0047] This embodiment achieves simultaneous optimization of port matching performance and module layout compactness across the 2-8GHz ultra-wideband range through the systematic synergy of a modular architecture and a full-link impedance transformation structure (the power dividers in the pre-stage power distribution module, the power combiner module, and the amplification module all employ quarter-wavelength impedance transformation sections). This design avoids systemic problems such as discontinuous frequency band matching and accumulated phase errors caused by fragmented power divider structures or localized impedance transformation in traditional solutions, providing a highly consistent infrastructure for multi-module power combining.

[0048] Example 3

[0049] This embodiment further describes the implementation method based on the device described in Embodiment 2:

[0050] The connections between the preamplifier power distribution module and the first amplifier module AM1, the preamplifier power distribution module and the second amplifier module AM2, the first amplifier module AM1 and the power combining module, and the second amplifier module AM2 and the power combining module are all achieved through coaxial connectors. Each module is encapsulated in an independent cavity, and the coaxial connector is fixed to the cavity port of the corresponding module by screws, and its center conductor is soldered to the microstrip line.

[0051] For example, the pre-stage T-junction microstrip power divider D1, the first input T-junction microstrip power divider D2a, the second input T-junction microstrip power divider D2b, the first output T-junction microstrip power divider D3a, the second output T-junction microstrip power divider D3b, and the post-stage T-junction microstrip power divider D4 are all fabricated on a TC350 high-frequency board with a dielectric constant of 3.5 and a thickness of 0.762mm.

[0052] In summary, the core of this embodiment lies in the collaborative design of the coaxial connector and the modular cavity architecture: through a standardized coaxial connection scheme, signal integrity is ensured within the 2-8GHz frequency band while enabling rapid assembly and maintenance of the modules; the selected TC350 substrate parameters (εᵣ=3.5) have been verified through actual testing to effectively support the circuit size and matching performance requirements in this frequency band. This solution focuses on solving the problem of synergistic optimization between signal quality and engineering maintainability in high-frequency modular devices, avoiding the conventional limitations of non-maintainable soldered connections or insufficient high-frequency performance of ordinary connectors.

[0053] Example 4

[0054] Based on the device described in Example 3, this embodiment further provides a detailed description of the implementation of an 8-channel S and C band broadband high-power combining device:

[0055] In this embodiment, the two amplification modules (first amplification module AM1 and second amplification module AM2) each integrate four independent power amplifier chips. The two amplification modules (first amplification module AM1 and second amplification module AM2) work together to form a power combining path with a total of eight channels. Taking the first amplification module AM1 as an example for explanation:

[0056] Its input power distribution network also includes a first input 90° hybrid bridge H1a and a second input 90° hybrid bridge H2a. The two output terminals of the first input T-junction microstrip power divider D2a are respectively connected to the input terminals of the first input 90° hybrid bridge H1a and the second input 90° hybrid bridge H2a. The two output terminals of the first input 90° hybrid bridge H1a are respectively connected to the input terminals of the first power amplifier chip PA1a and the second power amplifier chip PA2a. The two output terminals of the second input 90° hybrid bridge H2a are respectively connected to the input terminals of the third power amplifier chip PA3a and the fourth power amplifier chip PA4a. The output power combining network also includes a first output 90° hybrid bridge C1a and a second output 90° hybrid bridge C2a. The output terminals of the first power amplifier chip PA1a and the second power amplifier chip PA2a are respectively connected to the two input terminals of the first output 90° hybrid bridge C1a. The output terminals of the third power amplifier chip PA3a and the fourth power amplifier chip PA4a are respectively connected to the two input terminals of the second output 90° hybrid bridge C2a. The output terminals of the first output 90° hybrid bridge C1a and the second output 90° hybrid bridge C2a are respectively connected to the two input terminals of the first output T-junction microstrip power divider D3a. The isolation ports of the first input 90° hybrid bridge H1a, the second input 90° hybrid bridge H2a, the first output 90° hybrid bridge C1a, and the second output 90° hybrid bridge C2a are respectively connected to the first matched load L1a, the second matched load L2a, the third matched load L3a, and the fourth matched load L4a.

[0057] like Figure 2 As shown, the second amplification module AM2 includes a fifth power amplifier chip PA1b, a sixth power amplifier chip PA2b, a seventh power amplifier chip PA3b, an eighth power amplifier chip PA4b, a third input 90° hybrid bridge H1b, a fourth input 90° hybrid bridge H2b, a third output 90° hybrid bridge C1b, a fourth output 90° hybrid bridge C2b, and a fifth matching load L1b, a sixth matching load L2b, a seventh matching load L3b, and an eighth matching load L4b; its connection relationship is strictly symmetrical with the corresponding components in the first amplification module AM1.

[0058] The four input 90° hybrid bridges H1a, H1b, H2a, and H2b and the four output 90° hybrid bridges C1a, C1b, C2a, and C2b are all 90° hybrid bridge devices of model HLD-T0123-3T. The eight matched loads L1a, L2a, L3a, L4a, L1b, L2b, L3b, and L4b are all load devices of model RF50-100T0609-8.

[0059] The front-stage T-junction microstrip power divider D1 and the rear-stage T-junction microstrip power divider D4 use the same physical structure; the input T-junction microstrip power divider D2a and the output T-junction microstrip power divider D3a use the same physical structure, and the input T-junction microstrip power divider D2b and the output T-junction microstrip power divider D3b use the same physical structure.

[0060] The cavity of the pre-amplifier power distribution module and the cavity of the post-amplifier power combining module are made of aluminum alloy; the cavity of the first amplification module AM1 and the cavity of the second amplification module AM2 are made of copper. The bottom surface of the copper cavity is tightly bonded to the back of the power amplifier chip through a sintering process to form a directional heat conduction path.

[0061] All power amplifier chips use gallium nitride high electron mobility transistor chips (model NC11605C-208P40);

[0062] Each amplification module employs a stacked arrangement that physically separates radio frequency (RF) signals from DC power supply: the RF circuit board (carrying the power divider, 90° hybrid bridge, and power amplifier chip signal ports) is located on the upper layer, while the power supply circuit board (carrying the DC power distribution network) is stacked below it, with the two maintaining a fixed distance through ceramic insulating pillars; the power supply ports of the power amplifier chip are vertically interconnected with the power supply circuit board via metallized vias, achieving spatial isolation between the RF path and the power path and reducing mutual interference.

[0063] This embodiment systematically improves the overall performance of 8-channel high-power combining in terms of phase consistency, thermal management efficiency, and anti-interference capability through multi-dimensional collaboration of 90° hybrid bridge energy management, cavity material function-oriented configuration, and spatial isolation of RF / power supply paths. This design breaks through the performance bottleneck caused by isolated optimization of signal flow, heat flow, and energy flow in conventional modular solutions, and provides a complete and engineerable technical path for high-density integrated RF systems.

[0064] To verify the performance of the device described in this embodiment, the passive link and the overall device performance were tested respectively. The test results are as follows:

[0065] 1. Passive Link Performance Testing

[0066] The device's external electrical interfaces are all constructed using standard coaxial connectors: the input ports of the front-stage power distribution module and the interconnection ports between modules use D551P0713F01 coaxial connectors, while the output ports of the rear-stage power combining module use D34P0713F09 coaxial connectors. The modules are easily connected via these connectors to form a dual-port passive network. This network was then connected to a vector network analyzer for characterization in the 2-8GHz frequency band. The measured results are as follows:

[0067] Port matching characteristics: The return loss of both input and output ports is no greater than -40dB (voltage standing wave ratio better than 1.02);

[0068] Link symmetry: The forward and reverse transmission losses of the link are highly consistent, verifying the symmetry of the physical structure;

[0069] Transmission loss characteristics: Transmission loss is below 1.2dB in most frequency bands. Based on link symmetry, the loss of a single power divider or combining stage can be inferred to be below 0.6dB.

[0070] The test results verify the port matching and low loss characteristics of the passive power combiner network of this invention in the ultra-wideband range, providing empirical evidence for the high-efficiency realization of the power combining device.

[0071] 2. Overall performance testing across all frequency bands

[0072] A test system was built, including a signal source, a driver amplifier, the power combining device described in this embodiment, a high-power load, and measuring equipment. This test used a 28V DC operating voltage and selected multiple frequency points within the 2-8GHz band. The input power, output power, power gain, and power-added efficiency of the device were measured under saturated operating conditions. The test results are shown in Table 1 below.

[0073] Table 1:

[0074]

[0075] Test results show that the power combining device provided by this invention has a saturated output power of no less than 52dBm (about 158W) in a wide frequency band of 2-8GHz, a power gain of no less than 15dB across the entire frequency band, and an overall power-added efficiency of better than 20%, thus achieving wideband, high power, and high-efficiency power combining.

[0076] The above description is merely a preferred embodiment of this utility model. It should be understood that this utility model is not limited to the forms disclosed herein and should not be construed as excluding other embodiments. It can be used in various other combinations, modifications, and environments, and can be altered within the scope of the concept described herein through the above teachings or related technologies or knowledge. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of this utility model should be protected within the scope of the appended claims.

Claims

1. A broadband high-power combining device for S and C bands, characterized in that, The system includes a pre-stage power distribution module, at least two amplification modules, and a post-stage power combining module. Each amplification module includes an input power distribution network, multiple power amplification chips, and an output power combining network. The input terminal of the input power distribution network of each amplification module is connected to one output terminal of the pre-stage power distribution module, and the output terminal of the output power combining network of each amplification module is connected to one input terminal of the post-stage power combining module. The pre-stage power distribution module includes a pre-stage T-junction microstrip power divider (D1), the post-stage power combining module includes a post-stage T-junction microstrip power divider (D4), the input power distribution network includes an input T-junction microstrip power divider (D2), and the output power combining network includes an output T-junction microstrip power divider (D3). The impedance transformation sections of the pre-stage T-junction microstrip power divider (D1), the input T-junction microstrip power divider (D2), the output T-junction microstrip power divider (D3), and the post-stage T-junction microstrip power divider (D4) all include quarter-wavelength impedance transformation sections.

2. The S-C band broadband high-power combining device according to claim 1, characterized in that, Each input T-junction microstrip power divider (D2) has at least two output terminals. The input power distribution network of each amplification module also includes at least two input 90° hybrid bridges. Each output terminal of the input T-junction microstrip power divider (D2) is connected to the input terminal of one of the input 90° hybrid bridges. The two output terminals of each input 90° hybrid bridge are connected to the input terminals of two power amplifier chips. Each output T-junction microstrip power divider (D3) has at least two input terminals. The output power combining network of each amplification module also includes at least two output 90° hybrid bridges. The two input terminals of each output 90° hybrid bridge are connected to the output terminals of two power amplifier chips. The output terminals of each output 90° hybrid bridge are connected to the input terminals of the output T-junction microstrip power divider (D3).

3. The S-C band broadband high-power combining device according to claim 2, characterized in that, Each of the input 90° hybrid bridges and each of the output 90° hybrid bridges has a matching load connected to its isolation port.

4. The S-C band broadband high-power combining device according to claim 1, characterized in that, The pre-amplifier power distribution module and each of the amplification modules, as well as each of the amplification modules and the post-amplifier power combining module, are all connected via coaxial connectors.

5. The S-C band broadband high-power combining device according to claim 1, characterized in that, The front-stage T-junction microstrip power divider has the same structure as the rear-stage T-junction microstrip power divider, and the input T-junction microstrip power divider (D2) has the same structure as the output T-junction microstrip power divider (D3).

6. The S-C band broadband high-power combining device according to claim 1, characterized in that, All of the aforementioned power amplifier chips are gallium nitride high electron mobility transistor chips.

7. The S-C band broadband high-power combining device according to claim 2, characterized in that, In each of the amplification modules, there are two input 90° hybrid bridges and two output 90° hybrid bridges, and four power amplifier chips.

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