Wafer warping correction device
By incorporating spherical grooves and surfaces into the wafer warpage correction device and utilizing a heating structure to heat the warped wafer, the impact of wafer warpage on automated operations is resolved, thereby improving wafer yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- MAXSCEND MICROELECTRONICS CO LTD
- Filing Date
- 2025-06-10
- Publication Date
- 2026-05-12
AI Technical Summary
After packaging, wafers warp due to the mismatch in thermal expansion coefficients of the substrate, chip, and packaging layer, as well as uneven distribution of structural stress, which affects the yield of subsequent automated transfer and automated operations.
A wafer warpage correction device is used. By setting a spherical groove and a matching spherical surface in the base, the warped wafer is pressed in the opposite direction. The wafer is heated by a heating structure to make the molecular structure of the front and back of the wafer tend to be consistent and achieve stress balance.
It improves wafer warpage, reduces the impact on subsequent automated transport and automated operations, and increases wafer yield.
Smart Images
Figure CN224234141U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of semiconductor technology, and in particular relates to a wafer warpage correction device. Background Technology
[0002] After wafer-level packaging, the CTE (coefficient of thermal expansion) of the composite materials such as the substrate, chip, and packaging layer in the wafer may not match, and the structural stress distribution may be uneven, which can easily lead to wafer warpage. Excessive wafer warpage can affect subsequent automated transport and automated operations, thus impacting wafer yield. Utility Model Content
[0003] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a wafer warpage correction device that can improve the warpage of wafers and increase wafer yield.
[0004] In a first aspect, this application provides a wafer warpage correction device, comprising:
[0005] The base includes a spherical groove for placing a wafer, the edge of which is warped toward the spherical groove;
[0006] A pressure cap is located on the side of the base near the spherical groove. The side of the pressure cap near the base has a spherical surface that matches the spherical groove. The pressure cap is used to press the wafer between the spherical groove and the spherical surface.
[0007] A heating structure, located within the base at the bottom of the spherical groove, is used to heat the wafer being pressed together.
[0008] According to the wafer warpage correction device of this application, a spherical groove is provided in the base, and a spherical surface matching the spherical groove is provided on the side of the pressure cover near the base. The warped wafer is pressed in the opposite direction between the spherical groove and the spherical surface. The pressed wafer is heated by a heating structure, so that the molecular structure of the front and back of the wafer tends to be consistent, achieving stress balance, improving the warpage of the wafer, reducing the impact on subsequent automated conveying and automated operation, and improving the wafer yield.
[0009] According to one embodiment of this application, the heating structure includes a plurality of heating units distributed along the spherical groove;
[0010] The distribution density of the heating units gradually increases in the direction from the center to the edge of the inner surface of the spherical groove.
[0011] According to one embodiment of this application, each of the heating units extends circumferentially along the spherical groove to form a heating ring structure surrounding the spherical groove; or, a plurality of the heating units are distributed circumferentially along the spherical groove to form a heating ring structure surrounding the spherical groove.
[0012] The diameter of the plurality of heating annular structures gradually increases in the direction from the bottom to the top of the spherical groove.
[0013] According to one embodiment of this application, the wafer warpage correction device further includes:
[0014] A cooling structure, located within the base at the bottom of the spherical groove, is used to cool the heated wafer.
[0015] According to one embodiment of this application, the cooling structure includes a plurality of cooling units uniformly distributed along the spherical groove.
[0016] According to one embodiment of this application, each of the cooling units extends circumferentially along the spherical groove to form a cooling ring structure surrounding the spherical groove; or, a plurality of the cooling units are evenly distributed circumferentially along the spherical groove to form a cooling ring structure surrounding the spherical groove.
[0017] The diameter of the plurality of cooling annular structures gradually increases from the bottom of the spherical groove toward the top.
[0018] According to one embodiment of this application, the wafer warpage correction device further includes:
[0019] A first anti-stick coating covers the inner surface of the spherical groove;
[0020] A second anti-stick coating covers the spherical surface of the cap.
[0021] According to one embodiment of this application, the wafer warpage correction device further includes:
[0022] The pressure block is located on the side of the pressure cover opposite to the base.
[0023] According to one embodiment of this application, the pressure cap further has a positioning pin on the side near the base, the positioning pin being located on the periphery of the spherical surface;
[0024] The base has a positioning pin hole on the side near the pressure cap that matches the positioning pin, and the positioning pin hole is located on the periphery of the spherical groove.
[0025] According to one embodiment of this application, the depth of the spherical groove is 1cm to 3cm; and / or,
[0026] The central angle of the spherical groove is 45° to 135°.
[0027] The above-described one or more technical solutions in the embodiments of this application have at least one of the following technical effects:
[0028] By setting a spherical groove in the base and setting a spherical surface that matches the spherical groove on the side of the pressure cap near the base, the warped wafer is pressed in the opposite direction between the spherical groove and the spherical surface. The pressed wafer is heated by a heating structure, so that the molecular structure of the front and back of the wafer tends to be consistent, achieving stress balance, improving the warpage of the wafer, reducing the impact on subsequent automated conveying and automated operation, and improving the wafer yield.
[0029] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description
[0030] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:
[0031] Figure 1 This is one of the structural schematic diagrams of the wafer warp correction device provided in the embodiments of this application;
[0032] Figure 2 This is the second schematic diagram of the wafer warp correction device provided in the embodiments of this application;
[0033] Figure 3 This is a top view of the base in the wafer warp correction device provided in the embodiments of this application. Detailed Implementation
[0034] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0035] The wafer warpage correction device provided in the embodiments of this application is described below with reference to the accompanying drawings.
[0036] Figure 1 and Figure 2 This is a schematic diagram of the wafer warpage correction device provided in an embodiment of this application.
[0037] like Figure 1 and Figure 2 As shown, the wafer warpage correction device provided in this application embodiment includes a base 1, a pressure cover 2, and a heating structure 3.
[0038] The base 1 includes a spherical groove 11, the inner surface of which is part of a sphere. The longitudinal section of the spherical groove 11 is arc-shaped, and the transverse section of the spherical groove 11 is circular. The spherical groove 11 is used to place the wafer 4, and the edge of the wafer 4 is warped toward the spherical groove 11.
[0039] After wafer-level packaging, the CTE (Chemical Strength Interchange) of materials such as the substrate, chip, and packaging layer in the wafer may be mismatched, resulting in uneven structural stress distribution and potentially causing edge warping. When correcting a warped wafer 4, it is placed in the spherical groove 11 of the base 1, with the edge of wafer 4 warped towards the groove 11. At this point, the edge of wafer 4 is in contact with the groove 11, while the center is not. If both sides of wafer 4 are warped (i.e., the edge of the front side warps towards the front and the edge of the back side warps towards the back), the degree of warping is compared, and the side with greater warping is placed closer to the spherical groove 11. Warping refers to the degree of deformation of the wafer surface. The degree of warping can be compared by comparing the distance between the edge and center of the front and back sides along the wafer thickness direction; a larger distance indicates a greater degree of warping.
[0040] The pressure cap 2 is located on the side of the base 1 near the spherical groove 11, and the side of the pressure cap 2 near the base 1 has a spherical surface 21 that matches the spherical groove 11. The spherical surface 21 is a part of a sphere. The spherical surface 21 matches the size and shape of the spherical groove 11, and the size and shape of the spherical surface 21 are the same as those of the inner surface of the spherical groove 11. When the pressure cap 2 is pressed against the base 1, the spherical surface 21 of the pressure cap 2 is completely in contact with the inner surface of the spherical groove 11.
[0041] The pressure cap 2 is used to press the wafer 4 between the spherical groove 11 and the spherical surface 21. During the correction of a warped wafer 4, after the warped wafer 4 is placed in the spherical groove 11 of the base 1, the pressure cap 2 presses the wafer 4 between the spherical groove 11 and the spherical surface 21, so that both sides of the wafer 4 are in contact with the inner surfaces of the spherical surface 21 and the spherical groove 11, respectively. At this time, the shape of the wafer 4 matches the shape of the inner surface of the spherical groove 11 and the shape of the spherical surface 21, such as... Figure 2 As shown.
[0042] The heating structure 3 is located inside the base 1 at the bottom of the spherical groove 11. The heating structure 3 is used to heat the wafer 4 being pressed. The heating structure 3 is located inside the base 1 and can be arranged along the inner surface of the spherical groove 11 so as to heat different positions of the wafer 4 being pressed.
[0043] During the correction of the warped wafer 4, the wafer 4 pressed between the spherical groove 11 and the spherical surface 21 is subjected to high-temperature annealing, which makes the molecular structure of the front and back of the wafer 4 tend to be consistent, achieves stress balance, reduces the warpage of the wafer 4, thereby improving the warpage of the wafer 4, reducing the impact on subsequent automated conveying and automated operation, and improving the yield of the wafer 4.
[0044] During the heating process of wafer 4 using heating structure 3, the wafer 4 can be heated in stages as needed. For example, the heating power of heating structure 3 can be reduced first to decrease the heating rate, and then the heating power of heating structure 3 can be increased to increase the heating rate, so that wafer 4 heats up slowly at first and then heats up quickly, further improving the warpage reduction effect of wafer 4.
[0045] In some embodiments, the heating structure 3 includes a plurality of heating units 31 distributed along the spherical groove 11. The shape of the heating units 31 may be arc-shaped or block-shaped, etc., and is not specifically limited here. Different heating units 31 may have the same shape or different shapes. Different heating units 31 may have the same size or different sizes. The plurality of heating units 31 may be distributed sequentially along the center of the inner surface of the spherical groove 11 toward the edge, or sequentially along the circumference of the spherical groove 11, or sequentially along other directions of the spherical groove 11, and is not specifically limited here.
[0046] The distribution density of heating units 31 gradually increases in the direction from the center to the edge of the inner surface of the spherical groove 11. For example, the number of heating units 31 gradually increases, the spacing between adjacent heating units 31 gradually decreases, and the size of the heating units 31 gradually increases in the direction from the center to the edge of the inner surface of the spherical groove 11, thereby increasing the distribution density of the heating units 31.
[0047] The deformation at the edge of wafer 4 is greater than that at the center (the center of wafer 4 may also be undeformed). The heating unit density at the edge of the inner surface of the spherical groove 11 is higher, allowing the edge of wafer 4 to heat up faster and effectively improving edge warping. Conversely, the heating unit density at the center of the inner surface of the spherical groove 11 is lower, ensuring improvement in center warping while avoiding excessive heating units 31, thus reducing costs.
[0048] In some embodiments, such as Figure 3 As shown, each heating unit 31 extends circumferentially along the spherical groove 11, forming a heating ring structure surrounding the spherical groove 11, and the diameter of the multiple heating ring structures gradually increases from the bottom to the top of the spherical groove 11.
[0049] Each heating ring structure can be composed of one heating unit 31, and multiple heating units 31 respectively constitute multiple heating ring structures. The multiple heating ring structures are sequentially distributed from the bottom to the top of the spherical groove 11, and the diameter of the multiple heating ring structures gradually increases from the bottom to the top of the spherical groove 11, so that the multiple heating units 31 are distributed along the inner surface of the spherical groove 11. Here, the diameter of the heating ring structure refers to the diameter of the ring formed by the heating ring structures.
[0050] In some embodiments, a plurality of heating units 31 are distributed circumferentially along the spherical groove 11 to form a heating ring structure surrounding the spherical groove 11, and the diameter of the plurality of heating ring structures gradually increases from the bottom to the top of the spherical groove 11.
[0051] Each heating ring structure can be composed of multiple heating units 31 distributed circumferentially along the spherical groove 11. The multiple heating ring structures are sequentially distributed in the direction from the bottom to the top of the spherical groove 11, and the diameter of the multiple heating ring structures gradually increases in the direction from the bottom to the top of the spherical groove 11, so that the multiple heating units 31 are distributed along the inner surface of the spherical groove 11.
[0052] The thickness of different heating units 31 can be the same or different. When the longitudinal section of the heating unit 31 is circular, the thickness of the heating unit 31 can refer to the diameter of the heating unit 31. The heating unit 31 can be a heating wire or other heating element, which is not specifically limited here.
[0053] In the direction from the center to the edge of the inner surface of the spherical groove 11, a plurality of heating units 31 are arranged sequentially with the same thickness (e.g., the diameter of the heating units 31 is the same), and the spacing between adjacent heating units 31 gradually decreases, so as to gradually increase the distribution density of the heating units 31. Alternatively, in the direction from the center to the edge of the inner surface of the spherical groove 11, the spacing between adjacent heating units 31 is the same, and the plurality of heating units 31 are arranged sequentially with gradually increasing thickness (e.g., the diameter of the heating units 31 gradually increases), so as to gradually increase the distribution density of the heating units 31. Alternatively, in the direction from the center to the edge of the inner surface of the spherical groove 11, a plurality of heating units 31 are arranged sequentially with gradually increasing thickness (e.g., the diameter of the heating units 31 gradually increases), and the spacing between adjacent heating units 31 gradually decreases, so as to gradually increase the distribution density of the heating units 31.
[0054] In some embodiments, the wafer warpage correction device further includes a cooling structure 5. The cooling structure 5 is located within the base 1 at the bottom of the spherical groove 11, and is used to cool the heated wafer 4.
[0055] The cooling structure 5 is located inside the base 1, and the cooling structure 5 can be arranged along the inner surface of the spherical groove 11 to cool different positions of the wafer 4.
[0056] During the cooling process of wafer 4 using cooling structure 5, wafer 4 can be cooled in stages as needed. For example, the cooling rate of cooling structure 5 can be increased first, and then decreased, so that wafer 4 cools down quickly at first and then slowly, further improving the warpage reduction effect of wafer 4.
[0057] In some embodiments, the cooling structure 5 includes a plurality of cooling units 51 uniformly distributed along the spherical groove 11. The shape of the cooling units 51 may be arc-shaped or the like, and is not specifically limited here. The dimensions of different cooling units 51 may be the same or different. The plurality of cooling units 51 may be uniformly distributed along the center of the inner surface of the spherical groove 11 toward the edge, or they may be uniformly distributed along the circumference of the spherical groove 11, or they may be uniformly distributed along other directions, and is not specifically limited here.
[0058] After heating the wafer 4, the temperature is the same at different locations on the wafer 4. Cooling units 51, which are evenly distributed along the spherical groove 11, are used to cool the wafer 4, so that the cooling rate at different locations on the wafer 4 is consistent. This further ensures that the molecular structure on the front and back of the wafer tends to be consistent after cooling, and further improves the warpage reduction effect of the wafer 4.
[0059] In some embodiments, such as Figure 3 As shown, each cooling unit 51 extends circumferentially along the spherical groove 11, forming a cooling ring structure surrounding the spherical groove 11, and the diameter of the multiple cooling ring structures gradually increases from the bottom to the top of the spherical groove 11.
[0060] Each cooling ring structure can be composed of one cooling unit 51, and multiple cooling units 51 respectively constitute multiple cooling ring structures. The multiple cooling ring structures are sequentially distributed in the direction from the bottom to the top of the spherical groove 11, and the diameter of the multiple cooling ring structures gradually increases in the direction from the bottom to the top of the spherical groove 11, so that the multiple cooling units 51 are distributed along the inner surface of the spherical groove 11. The diameter of the cooling ring structure refers to the diameter of the ring formed by the cooling ring structures.
[0061] In some embodiments, a plurality of cooling units 51 are evenly distributed along the circumference of the spherical groove 11 to form a cooling ring structure surrounding the spherical groove 11, and the diameter of the plurality of cooling ring structures gradually increases from the bottom to the top of the spherical groove 11.
[0062] Each cooling ring structure can be composed of multiple cooling units 51 evenly distributed around the circumference of the spherical groove 11. The multiple cooling ring structures are sequentially distributed in the direction from the bottom to the top of the spherical groove 11, and the diameter of the multiple cooling ring structures gradually increases in the direction from the bottom to the top of the spherical groove 11, so that the multiple cooling units 51 are distributed along the inner surface of the spherical groove 11.
[0063] Multiple cooling units 51 can have the same thickness. When the longitudinal section of a cooling unit 51 is circular, the thickness of the cooling unit 51 can refer to its diameter. The cooling unit 51 can be a cooling water pipe, through which cooling water is circulated to cool the wafer 4. The cooling rate of the cooling structure 5 can be adjusted by changing the circulation rate of the cooling water in the pipe. The cooling unit 51 can also be other cooling elements; no specific limitation is made here.
[0064] Multiple cooling units 51 are of the same thickness (e.g., the diameter of the cooling units 51 is the same), and the spacing between adjacent cooling units 51 is the same, so that the multiple cooling units 51 are evenly distributed.
[0065] In some embodiments, the wafer warpage correction device further includes a first anti-stick coating 61 and a second anti-stick coating 62. The first anti-stick coating 61 covers the inner surface of the spherical groove 11, and the second anti-stick coating 62 covers the spherical surface of the pressure cap 2.
[0066] The first anti-stick coating 61 can completely cover the inner surface of the spherical groove 11. The first anti-stick coating 61 is used to prevent the wafer 4 from sticking to the base 1 after lamination, thereby avoiding damage to the wafer 4 caused by the base 1. The material of the first anti-stick coating 61 may include Teflon (polytetrafluoroethylene), silicone, or highly active adsorbent materials, etc.
[0067] The second anti-stick coating 62 can completely cover the spherical surface of the pressure cap 2. The second anti-stick coating 62 is used to prevent the wafer 4 from sticking to the pressure cap 2 after lamination, thereby avoiding damage to the wafer 4 caused by the pressure cap 2. The material of the second anti-stick coating 62 may include Teflon (polytetrafluoroethylene), silicone, or highly active adsorbent materials, etc.
[0068] In some embodiments, the wafer warpage correction device further includes a pressure block 7, which is located on the side of the pressure cover 2 away from the base 1.
[0069] The pressure block 7 and the pressure cover 2 are detachably connected. The wafer warpage correction device may include multiple pressure blocks 7, and the multiple pressure blocks 7 have different mass specifications. The pressure cover 2 can be configured with pressure blocks 7 of different masses to adapt to different warped wafers. The greater the warpage of the wafer 4, the greater the stress on the wafer 4, and the greater the mass of the pressure block 2 configured on the pressure cover 2; the smaller the warpage of the wafer 4, the smaller the stress on the wafer 4, and the smaller the mass of the pressure block 2 configured on the pressure cover 2.
[0070] In practical applications, after placing the wafer 4 in the spherical groove 11, pressure blocks 7 of different masses can be selected and placed on the pressure cover 2 according to the warpage and stress of the wafer 4. Then, the pressure cover 2 with the pressure blocks 7 is slowly lowered to close the mold, pressing the wafer 4 between the spherical surface 21 and the inner surface of the spherical groove 11.
[0071] In some embodiments, the mass of the pressing block 7 is 1 kg to 10 kg.
[0072] In this embodiment, pressure blocks 7 of different masses are configured on the pressure cover 2, which can adapt to wafers with different warpage and / or different stresses, thereby improving the applicability of the wafer warpage correction device.
[0073] In some embodiments, the pressure cap 2 has a positioning pin 22 on the side near the base 1, and the positioning pin 22 is located on the periphery of the spherical surface 21. There can be multiple positioning pins 22 (e.g., three), and the multiple positioning pins 22 are evenly distributed on the periphery of the spherical surface 21.
[0074] The base 1 has a positioning pin hole 12 on the side near the pressure cover 2, which matches the positioning pin 22. The positioning pin hole 12 is located on the periphery of the spherical groove 11. The number of positioning pin holes 12 is the same as the number of positioning pins 22. Multiple positioning pin holes 12 are set one-to-one with multiple positioning pins 22, and the size and shape of each positioning pin hole 12 matches the corresponding positioning pin 22.
[0075] In this embodiment, when the wafer 4 is pressed between the inner surfaces of the spherical surface 21 and the spherical groove 11 by the pressure cap 2, precise alignment and pressing can be achieved by the positioning pins 22 on the periphery of the spherical surface 21 and the positioning pin holes 12 on the periphery of the spherical groove 11.
[0076] In some embodiments, such as Figure 1 and Figure 2 As shown, the end of the locating pin 22 that is away from the pressure cap 2 is chamfered.
[0077] In this embodiment, the bottom of the positioning pin 22 is chamfered, which helps to align the positioning pin 22 with the positioning pin hole 12.
[0078] In some embodiments, the depth of the spherical groove 11 is 1cm to 3cm.
[0079] The depth of the spherical groove 11 should not be set too deep, otherwise the wafer 4 will not be able to be placed in the spherical groove 11, causing the wafer 4 to crack after the pressure cap 2 is pressed together. The depth of the spherical groove 11 should also not be set too shallow, otherwise the effect of improving the warpage of the wafer 4 will not be obvious. In this embodiment, the depth of the spherical groove 11 is 1cm to 3cm to ensure that the wafer 4 can be kept in the spherical groove 11 and to avoid damage to the wafer 4 after the pressure cap 2 is pressed together, while ensuring that the warpage of the wafer 4 can be effectively improved.
[0080] In some embodiments, the central angle of the spherical groove 11 is 45° to 135°.
[0081] In this embodiment, the sphere center angle of the spherical groove 11 is 45° to 135° to ensure that the wafer 4 can be prevented from being in the spherical groove 11 and to avoid damage to the wafer 4 after the pressure cap 2 is pressed, while ensuring that the warpage of the wafer 4 can be effectively improved.
[0082] In summary, the wafer warpage correction device provided in this application provides a spherical groove 11 in the base 1 and a spherical surface 21 matching the spherical groove 11 on the side of the pressure cover 2 near the base 1. The warped wafer 4 is pressed in the opposite direction between the spherical groove 11 and the spherical surface 21. The pressed wafer 4 is heated by the heating structure 3, so that the molecular structure of the front and back of the wafer 4 tends to be consistent, achieving stress balance, improving the warpage of the wafer 4, reducing the impact on subsequent automated transfer and automated operation, and improving the wafer yield.
[0083] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and are not used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and are not limited in number; for example, a first object can be one or more.
[0084] In the description of this application, "multiple" means two or more.
[0085] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0086] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.
Claims
1. A wafer warpage correction device, characterized in that, include: The base includes a spherical groove for placing a wafer, the edge of which is warped toward the spherical groove; A pressure cap is located on the side of the base near the spherical groove. The side of the pressure cap near the base has a spherical surface that matches the spherical groove. The pressure cap is used to press the wafer between the spherical groove and the spherical surface. A heating structure, located within the base at the bottom of the spherical groove, is used to heat the wafer being pressed together.
2. The wafer warpage correction device according to claim 1, characterized in that, The heating structure includes a plurality of heating units distributed along the spherical groove; The distribution density of the heating units gradually increases in the direction from the center to the edge of the inner surface of the spherical groove.
3. The wafer warpage correction device according to claim 2, characterized in that, Each of the heating units extends circumferentially along the spherical groove, forming a heating ring structure surrounding the spherical groove; or, multiple heating units are distributed circumferentially along the spherical groove, forming a heating ring structure surrounding the spherical groove. The diameter of the plurality of heating annular structures gradually increases in the direction from the bottom to the top of the spherical groove.
4. The wafer warpage correction device according to claim 1, characterized in that, The wafer warpage correction device also includes: A cooling structure, located within the base at the bottom of the spherical groove, is used to cool the heated wafer.
5. The wafer warpage correction device according to claim 4, characterized in that, The cooling structure includes a plurality of cooling units evenly distributed along the spherical groove.
6. The wafer warpage correction device according to claim 5, characterized in that, Each of the cooling units extends circumferentially along the spherical groove, forming a cooling ring structure surrounding the spherical groove; or, multiple cooling units are evenly distributed circumferentially along the spherical groove, forming a cooling ring structure surrounding the spherical groove. The diameter of the plurality of cooling annular structures gradually increases from the bottom of the spherical groove toward the top.
7. The wafer warpage correction device according to claim 1, characterized in that, The wafer warpage correction device also includes: A first anti-stick coating covers the inner surface of the spherical groove; A second anti-stick coating covers the spherical surface of the cap.
8. The wafer warpage correction device according to claim 1, characterized in that, The wafer warpage correction device also includes: The pressure block is located on the side of the pressure cover opposite to the base.
9. The wafer warpage correction device according to claim 1, characterized in that, The pressure cap also has a positioning pin on the side near the base, and the positioning pin is located on the periphery of the spherical surface; The base has a positioning pin hole on the side near the pressure cap that matches the positioning pin, and the positioning pin hole is located on the periphery of the spherical groove.
10. The wafer warpage correction apparatus according to any one of claims 1-9, characterized in that, The depth of the spherical groove is 1cm to 3cm; and / or, The central angle of the spherical groove is 45° to 135°.