Bearing device and semiconductor process equipment

Abstract

The utility model provides a bearing device and semiconductor process equipment, the bearing device comprises a bearing device body, an air guide cavity is formed in the bearing device body, the bottom of the bearing device body is provided with an air guide pipeline, and the air guide pipeline is used for being communicated with a vacuumizing system; a plurality of air guide holes communicated with the air guide cavity are formed in the top surface of the bearing device body, and the upper surface of the bearing device body is used for bearing the frame type wafer and is in contact with an attached film on the back surface of the frame type wafer. According to the utility model, the problem that the attached film swells in the frame type wafer residual adhesive removing process can be solved.

Description

Technical Field

[0001] This utility model belongs to the field of high-performance bandwidth storage, and more specifically, relates to a carrier device and semiconductor process equipment. Background Technology

[0002] The frame wafer (also known as frame wafer) descumming process involves placing the frame wafer on top of a carrier, with the adhesive film in direct contact with the carrier. Ultraviolet light irradiation is used to adjust the peel viscosity of the adhesive film, removing residual adhesive from the wafer surface. The adhesive film is characterized by its thinness and low-temperature resistance. During the descumming process, the carrier and adhesive film are typically kept at low temperatures to avoid high-temperature arcing. However, because the adhesive film is very thin, low temperatures can cause poor adhesion between the adhesive film and the carrier, leading to bulging. Radio frequency plasma within the process chamber can then enter the gaps and contact the adhesive film, causing it to arc and burn, further leading to arcing on the back of the frame wafer, affecting product yield.

[0003] Existing technology adds a pressure ring inside the process chamber, relying on the gravity of the pressure ring to bond the adhesive film to the carrier device. However, the gravity of the pressure ring is concentrated at the edge of the frame-type wafer, which can only solve the bulging problem at the edge, while the bulging phenomenon will be aggravated in the middle. Utility Model Content

[0004] The purpose of this invention is to provide a carrier device and semiconductor process equipment to solve the problem of film bulging during the residual adhesive removal process of frame-type wafers.

[0005] To achieve the above objectives, in a first aspect, this utility model provides a carrier device suitable for frame-type wafers. The frame-type wafer includes a wafer, an attachment film, and a frame ring. The attachment film is fixed to the frame ring, and the wafer is attached to the attachment film. The carrier device includes:

[0006] The support device body has an air guiding cavity formed inside it, and an air guiding pipe is provided at the bottom of the support device body. The air guiding pipe is used to connect with the vacuum system.

[0007] The top surface of the bearing device body is provided with a plurality of air guide holes that communicate with the air guide cavity;

[0008] The top surface of the supporting device body is basically flat.

[0009] Optionally, the plurality of air guide holes are arranged on the top surface of the support device body into a plurality of concentric circles with the center of the support device body as the center, and the diameter of each concentric circle is smaller than the diameter of the wafer.

[0010] Optionally, multiple air guide holes are arranged on the top surface of the carrier device body in three concentric circles centered on the center of the carrier device body, and the diameters of the three concentric circles are 0.2 to 0.3 times, 0.6 to 0.7 times, and 0.9 to 1 times the diameter of the wafer, respectively.

[0011] Optionally, the product of the diameter d of the air guide hole and the air pressure P inside the air guide hole satisfies: 1.33 Pa·m < Pd < 13.3 Pa·m; or

[0012] The product of the diameter d of the air guide hole and the air pressure P inside the air guide hole satisfies: 1.33 Pa·m < Pd < 6.65 Pa·m.

[0013] Optionally, the diameter d of the air guide hole is less than 1.4 mm.

[0014] Optionally, there are a plurality of annular air guide grooves, and the plurality of annular air guide grooves are correspondingly arranged with the concentric circles formed by arranging the plurality of air guide holes;

[0015] At least one connecting groove, and at least one connecting groove connects the plurality of annular air guide grooves.

[0016] Optionally, there are a plurality of connecting grooves, and the plurality of connecting grooves are radially distributed and connect all the annular air guide grooves along the radial direction of the carrier device body.

[0017] Optionally, the carrier device body includes: an air guide layer and a conduction layer, the air guide layer is located on the conduction layer, and an air guide cavity is formed between the air guide layer and the conduction layer;

[0018] The air guide holes are arranged on the air guide layer, the air guide holes penetrate through the air guide layer, and the projections of the air guide holes on the surface of the conduction layer fall into the annular air guide grooves;

[0019] The top edge of the conduction layer is hermetically connected to the edge of the air guide layer.

[0020] In a second aspect, the present invention provides a semiconductor process equipment, including: a vacuum pumping system, a process chamber, and the carrier device described in the first aspect;

[0021] The carrier device is arranged in the process chamber, and the vacuum pumping system is respectively connected to the air guide pipeline of the carrier device and the process chamber.

[0022] Optionally, the vacuum pumping system includes: a main pipeline, a vacuum pumping component, a first branch pipe, a second branch pipe, and a pressure regulating component;

[0023] The pressure regulating component is connected to one end of the main pipeline, and a third valve is provided at the connection between the pressure regulating component and the main pipeline;

[0024] The vacuum pumping component is connected to the other end of the main pipeline to generate negative pressure in the main pipeline. A fourth valve is provided at the connection between the vacuum pumping component and the main pipeline.

[0025] The first branch pipe is disposed between the vacuuming component and the pressure regulating component, and connects the main pipeline to the air guide pipeline of the bearing device. The first branch pipe is provided with a first valve.

[0026] The second branch pipe is located between the vacuuming component and the pressure regulating component, and connects the main pipeline to the process chamber. The first branch pipe is equipped with a second valve.

[0027] The beneficial effects of this utility model are as follows: It provides a carrier device suitable for frame-type wafers. The carrier device includes a carrier device body, an air guide cavity is formed inside the carrier device body, and an air guide hole is provided on the top surface of the carrier device body. During the residual adhesive removal process, the adhesive film on the back of the frame-type wafer is placed tightly against the carrier device. A vacuum system is used to evacuate the air guide cavity and remove the gas between the adhesive film and the top surface of the carrier device, so that the frame-type wafer is adsorbed on the top surface of the carrier device, which can prevent the adhesive film from bulging.

[0028] Other features and advantages of this invention will be described in detail in the following detailed description section. Attached Figure Description

[0029] The above and other objects, features and advantages of the present invention will become more apparent from the accompanying drawings, in which like reference numerals generally represent like parts.

[0030] Figure 1 A schematic diagram of a frame-type wafer structure in the prior art is shown.

[0031] Figure 2 A schematic structural diagram of a support device according to Embodiment 1 of the present invention is shown.

[0032] Figure 3 A top view of the support device according to Embodiment 1 of the present invention is shown.

[0033] Figure 4 A schematic structural diagram of the conductive layer according to Embodiment 1 of the present invention is shown.

[0034] Figure 5 A schematic structural diagram of the bearing device after the air-guiding layer has been transparently treated according to Embodiment 1 of the present invention is shown.

[0035] Figure 6A schematic diagram of the application of the support device according to Embodiment 1 of the present invention is shown.

[0036] Figure 7 A schematic structural diagram of a semiconductor process apparatus according to Embodiment 2 of the present invention is shown.

[0037] Figure 8 A flowchart of the existing frame-type wafer residual adhesive removal process is shown.

[0038] Figure 9 One of the process flow diagrams for removing residual adhesive from a frame-type wafer according to Embodiment 3 of this utility model is shown.

[0039] Figure 10 The second flowchart of the frame-type wafer residual adhesive removal process according to Embodiment 3 of this utility model is shown.

[0040] Figure 11 The diagram shows a schematic of step 1 of the frame-type wafer residual adhesive removal process according to Embodiment 3 of the present invention.

[0041] Figure 12 A schematic diagram of step 2 of the frame-type wafer residual adhesive removal process according to Embodiment 3 of this utility model is shown.

[0042] Figure 13 The diagram shows a schematic of step 1 of the desorption process for removing residual adhesive from a frame-type wafer according to Embodiment 3 of this utility model.

[0043] Figure 14 The diagram shows step 2 of the desorption process for removing residual adhesive from a frame-type wafer according to Embodiment 3 of this utility model.

[0044] Explanation of reference numerals in the attached figures:

[0045] 1. Supporting device body; 11. Air guiding layer; 12. Air guiding hole; 13. Conducting layer; 14. Air guiding cavity; 15. Air guiding groove; 16. Connecting groove; 17. Air guiding pipeline; 18. Mounting part; 2. Vacuum system; 201. Main pipeline; 202. Vacuuming component; 203. First branch pipe; 204. Second branch pipe; 205. Pressure regulating component; 206. First valve; 207. Second valve; 208. Third valve; 209. Fourth valve; 210. First pressure detection element; 211. Second pressure detection element; 3. Frame type wafer; 31. Attached film; 32. Frame ring; 33. Wafer; 4. Process chamber. Detailed Implementation

[0046] High-performance bandwidth memory (HBM) is a high-performance memory technology that uses 3D stacking technology to stack multiple dynamic random access memory (DRAM) chips together and connect them through through-silicon vias (TSVs), achieving high bandwidth and low power consumption. It has broad application prospects in the AI ​​field. HBM technology has strict requirements on the stacking height of DRAM chips. In actual manufacturing processes, the wafer thickness is thinner than that of conventional wafers. Before processing, a film is attached to the back of the wafer to fix it during the process. To ensure the wafer's integrity during the process and reduce issues such as dropping or damage, a frame-type wafer is typically used, as shown in Figure 3. Figure 1 As shown, wafer 33 is attached to adhesive film 31, and adhesive film 31 is fixed to frame ring 32. In some optional embodiments, adhesive film 31 can be a UV film, also known as ultraviolet irradiation tape, which is adhesive and its adhesive peel strength is variable. The peel viscosity can be adjusted by ultraviolet irradiation. Therefore, after the actual process is completed, ultraviolet irradiation can ensure that there is no adhesive residue on the wafer surface, making it easy to remove.

[0047] The characteristics of the adhesive film 31 are thinness and low temperature resistance. During the residual adhesive removal process, the adhesive film 31 is in direct contact with the carrier device. In the actual process, the carrier device and the adhesive film 31 are usually controlled at a low temperature to avoid high temperature arcing. However, because the adhesive film 31 is very thin, the low temperature will cause poor adhesion between the adhesive film 31 and the carrier device, resulting in bulging. The radio frequency plasma in the process chamber will enter the gap and come into contact with the adhesive film 31, causing the adhesive film 31 to arc and burn, and further causing arcing on the back of the frame wafer 3, affecting the product yield.

[0048] This invention proposes a carrier device and semiconductor process equipment. The pressure difference is used to characterize whether the attached film 31 is attached to the carrier device. By controlling the pressure difference between the upper and lower surfaces of the frame-type wafer 3, the attached film 31 of the frame-type wafer 3 is made into adsorption contact with the carrier device, residual gas is discharged, and bulging problems are avoided.

[0049] Preferred embodiments of the present invention will now be described in more detail. While preferred embodiments of the present invention are described below, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to make the present invention more thorough and complete, and to fully convey the scope of the present invention to those skilled in the art.

[0050] Example 1

[0051] like Figure 2-6As shown in the figure, this embodiment provides a carrier device applicable to a frame-type wafer 3. The frame-type wafer 3 includes a wafer 33, an attachment film 31, and a frame ring 32. The attachment film 31 is fixed to the frame ring 32, and the wafer 33 is attached to the attachment film 31. The carrier device includes:

[0052] A carrier device body 1. An air guide cavity 14 is formed inside the carrier device body 1. A gas pipeline 17 is provided at the bottom of the carrier device body 1. The gas pipeline 17 is used to communicate with a vacuum pumping system 2.

[0053] A plurality of air guide holes 12 communicating with the air guide cavity 14 are provided on the top surface of the carrier device body 1.

[0054] The top surface of the carrier device body (1) is substantially flat.

[0055] Specifically, during the process of removing residual glue, the attachment film 31 on the back of the frame-type wafer 3 is placed closely against the carrier device. The gas pipeline 17 is connected to the existing vacuum pumping system 2 for air extraction. The residual gas on the back of the frame-type wafer 3 passes through the air guide holes 12 and the air guide cavity 14 in sequence and is collected into the gas pipeline 17, and is pumped away together by the vacuum pumping system 2, so as to discharge the gas between the attachment film 31 and the top surface of the carrier device, and make the frame-type wafer 3 adsorbed on the top surface of the carrier device, avoiding the occurrence of the problem of the attachment film 31 bulging.

[0056] Optionally, the plurality of air guide holes 12 are arranged on the top surface of the carrier device body 1 into a plurality of concentric circles centered on the center of the carrier device body 1. The diameters of the concentric circles are all smaller than the diameter of the wafer 33. The diameters of the three concentric circles are 0.2 times - 0.3 times, 0.6 times - 0.7 times, and 0.9 times - 1 times of the diameter of the wafer 33 respectively.

[0057] Specifically, arranging the plurality of air guide holes 12 into a plurality of concentric circles can make the adsorption force on the top surface of the carrier device evenly distributed. The bulging of the attachment film 31 mostly occurs near the concentric circles with diameters of 0.2 times - 0.3 times, 0.6 times - 0.7 times, and 0.9 times - 1 times of the diameter of the wafer 33. Arranging the air guide holes 12 at the three concentric circles can solve the bulging problem of products of this size.

[0058] In a specific example, the diameter of the wafer 33 is 300 mm. The optional diameter ranges of the three concentric circles are 60 mm - 90 mm, 180 mm - 210 mm, and 270 mm - 300 mm respectively. The diameters of the three concentric circles are preferably 85 mm, 185 mm, and 285 mm.

[0059] Optionally, the product of the diameter d of the air guide hole 12 and the air pressure P inside the air guide hole 12 satisfies: 1.33 Pa·m < Pd < 13.3 Pa·m; or

[0060] Specifically, the gas guide hole 12 may generate hollow cathode discharge, that is, circular hole discharge phenomenon. The product of the diameter d of the gas guide hole 12 and the gas pressure P inside the gas guide hole 12 satisfies 1.33 Pa·m < Pd < 13.3 Pa·m, which can avoid the occurrence of hollow cathode discharge phenomenon inside the gas guide hole 12.

[0061] Preferably, the product of the diameter d of the gas guide hole (12) and the gas pressure P inside the gas guide hole (12) satisfies: 1.33 Pa·m < Pd < 6.65 Pa·m.

[0062] Specifically, the product of the diameter d of the gas guide hole 12 and the gas pressure P inside the gas guide hole 12 needs to satisfy 1.33 Pa·m < Pd < 6.65 Pa·m. Under this gas pressure condition, on the one hand, it can meet the process pressure requirements during actual production, and on the other hand, it can firmly adsorb the attachment film 31 at the orifice of the gas guide hole 12 to isolate the plasma and avoid the occurrence of hollow cathode discharge phenomenon.

[0063] Preferably, the diameter of the gas guide hole 12 is less than twice the sheath thickness;

[0064] Specifically, the diameter d of the gas guide hole 12 being less than twice the sheath thickness can inhibit the entry of plasma into the gas guide hole 12 and avoid the occurrence of sparking. In addition, the setting of the diameter d of the gas guide hole 12 should also consider the convenience of later maintenance and cleaning to prevent excessive process by-products from entering.

[0065] In this embodiment, the diameter d of the gas guide hole 12 is less than 1.4 mm.

[0066] In this embodiment, the sheath thickness is calculated to be 0.7 mm according to the actual process conditions. Therefore, the diameter d of the gas guide hole 12 is set to be less than 1.4 mm.

[0067] In this embodiment, the orifice of the gas guide hole 12 is a smooth fillet, and the optional size range of the smooth fillet is R0.08 mm - R0.12 mm, and the preferred size of the smooth fillet is R0.1 mm.

[0068] Specifically, the electric field near the tip of the charged conductor is relatively large, which can ionize the nearby air into a conductor and cause discharge phenomenon. To prevent this phenomenon from occurring, all the orifices of the gas guide holes 12 are processed into R0.1 fillets, and it is necessary to ensure that there are no burrs after processing.

[0069] Optionally, the gas guide cavity 14 includes:

[0070] A plurality of annular gas guide grooves 15, and the plurality of annular gas guide grooves 15 are correspondingly arranged with the concentric circles formed by arranging a plurality of the gas guide holes (12);

[0071] At least one connecting groove 16, wherein at least one of the connecting grooves 16 connects to a plurality of the annular air guide grooves 15.

[0072] Specifically, by setting the air guide cavity 14 in a groove shape and corresponding to the circular arrangement of the air guide holes 12, the adsorption force can be concentrated at multiple locations of the bulge, thus preventing the bulge from occurring.

[0073] Optionally, there are multiple connecting slots 16, which are radially distributed and connect all annular air guide slots 15 along the radial direction of the bearing device body 1.

[0074] Specifically, the connecting grooves 16 are radially distributed, which can shorten the connecting path and make the pressure in the air guide cavity 14 uniformly distributed.

[0075] Optionally, the width of the air guide groove 15 is greater than the diameter of the air guide hole 12.

[0076] Specifically, the width of the air guide groove 15 is greater than the diameter of the air guide hole 12, so that the air guide groove 15 completely covers the area of ​​the air guide hole 12, thereby improving the adsorption effect.

[0077] Optionally, the width of the air guide groove 15 can be selected from 4.5mm to 5.5mm, and the preferred width of the air guide groove 15 is 5mm; the depth of the air guide groove 15 can be selected from 1.0mm to 2mm, and the preferred depth of the air guide groove 15 is 1.5mm.

[0078] The width of the connecting groove 16 can be selected from 4.5mm to 5.5mm, and the preferred width of the connecting groove 16 is 5mm; the depth of the connecting groove 16 can be selected from 1.0mm to 2mm, and the preferred depth of the connecting groove 16 is 1.5mm.

[0079] Specifically, the dimensions of the air guide groove 15 are set to 5mm wide and 1.5mm deep, and the dimensions of the connecting groove 16 are set to 5mm wide and 1.5mm deep, so that the pressure in the air guide cavity 14 is concentrated at the location where bulges occur, while completely covering the location where bulges occur.

[0080] Optionally, the bearing device body 1 includes: an air guiding layer 11 and a conductive layer 13, wherein the air guiding layer 11 is located on the conductive layer 13, and the air guiding cavity 14 is formed between the air guiding layer 11 and the conductive layer 13;

[0081] The air guide hole 12 is disposed on the air guide layer 11, the air guide hole 12 penetrates the air guide layer 11, and the projection of the air guide hole 12 on the surface of the conductive layer 13 falls into the annular air guide groove 15.

[0082] The top edge of the conductive layer 13 is sealed to the edge of the air-conducting layer 11.

[0083] In this embodiment, the carrier device body 1 is formed by welding two components, a gas guiding layer 11 and a conductive layer 13, to create a sealed integral structure, ensuring that the gas below the frame-type wafer 3 can be completely extracted. The conductive layer 13 is also provided with a mounting part 18 for mounting the carrier device body 1 into the process chamber 4.

[0084] Example 2

[0085] like Figure 7 As shown, this embodiment provides a semiconductor process apparatus, including: a vacuum system 2 and the carrier device in Embodiment 1;

[0086] The support device is installed in the process chamber 4, and the vacuum system 2 is connected to the air guide pipe 17 of the support device and the process chamber 4.

[0087] Optionally, the vacuum system 2 includes: a main pipeline 201, a vacuuming component 202, a first branch pipe 203, a second branch pipe 204, and a pressure regulating component 205;

[0088] The pressure regulating component 205 is connected to one end of the main pipeline 201, and a third valve 208 is provided at the connection between the pressure regulating component 205 and the main pipeline 201;

[0089] The vacuuming component 202 is connected to the other end of the main pipeline 201 to generate negative pressure in the main pipeline 201. A fourth valve 209 is provided at the connection between the vacuuming component 202 and the main pipeline 201.

[0090] The first branch pipe 203 is disposed between the vacuuming component 202 and the pressure regulating component 205, and connects the main pipeline 201 with the air guide pipeline 17 of the bearing device. The first branch pipe 203 is provided with a first valve 206.

[0091] The second branch pipe 204 is disposed between the vacuuming component 202 and the pressure regulating component 205, and connects the main pipeline 201 and the process chamber 4. The first branch pipe 203 is provided with a second valve 207.

[0092] Specifically, existing frame-type wafer residual adhesive removal processes, such as Figure 8As shown, the vacuum system 2 is only connected to the process chamber 4, and the pressure sensor only measures the pressure in the process chamber 4. During the residual adhesive removal process, the pressure in the process chamber 4, which is the pressure on the upper surface of the frame wafer 3, is controlled. Once the process pressure condition is met, radio frequency can be applied to start the residual adhesive removal process. In this embodiment, the vacuum system 2 is divided into two parts: one part is connected to the process chamber 4, and the other part is connected to the air guide cavity 14 of the carrier device. Utilizing the principle of pressure difference, by controlling the pressure between the attachment film 31 and the carrier device to be less than the pressure in the process chamber 4, the frame wafer 3 is adsorbed onto the carrier device, achieving the back pressure control function and thus avoiding bulging problems. After the process is completed, the pressure between the attachment film 31 and the carrier device is controlled to be consistent with the pressure in the process chamber 4, causing the frame wafer 3 to release from the carrier device, and then the frame wafer 3 is transferred out of the process chamber 4.

[0093] In this embodiment, the vacuum pumping component 202 is a dry pump, the pressure regulating component 205 is a flow regulating controller, and the first branch pipe 203 is also equipped with a first pressure detection element 210, which is used to measure the pressure of the gas guide chamber 14; the first branch pipe 203 is also equipped with a second pressure detection element 211, which is used to measure the pressure of the process chamber 4. Both the first pressure detection element 210 and the second pressure detection element 211 are vacuum gauges. In specific implementation, the pressure of the process chamber 4 and the gas guide chamber 14 is adjusted by controlling the flow of the flow regulating controller, so that the pressure on the back of the frame wafer 3 is less than the pressure on the upper surface of the frame wafer 3. The entire control process is divided into adsorption and desorption. When the detection value of the first pressure detection element 210 is less than the detection value of the second pressure detection element 211, the pressure on the back of the frame wafer 3 is less than the pressure on the upper surface, which indicates that the frame wafer 3 and the carrier device have been adsorbed and bonded. When the detection value of the first pressure detection element 210 is greater than the detection value of the second pressure detection element 211, there is no pressure difference between the upper and lower surfaces of the frame wafer 3, which indicates that there is no longer an adsorption and bonding relationship between the frame wafer 3 and the chuck.

[0094] Example 3

[0095] like Figure 9 As shown, this embodiment provides a method for removing residual adhesive from a frame-type wafer, utilizing the semiconductor process equipment in Embodiment 2, including:

[0096] S1: The vacuum system 2 is used to adjust the pressure inside the gas guide cavity 14 to be less than the pressure in the process chamber 4, so that the adhesive film 31 on the back of the frame wafer 3 is adsorbed onto the top surface of the support device, so as to perform a residual adhesive removal operation on the frame wafer 3.

[0097] In this step, the adsorption process includes adsorption step one and adsorption step two.

[0098] Adsorption step one: such as Figure 11 As shown, the first valve 206 and the second valve 207 are closed, the third valve 208 and the fourth valve 209 are open, the flow regulating controller is turned on, the vacuum pumping component 202 is turned on, and the arrow indicates the airflow direction. The main function of this step is to allow airflow, preparing for the next step of pressure control.

[0099] Adsorption step two: such as Figure 12 As shown, the third valve 208, the first valve 206, and the fourth valve 209 are open, the second valve 207 is closed, the flow control controller is turned on, the vacuum pumping component 202 is turned on, the arrow indicates the airflow direction, the flow control controller dynamically adjusts the gas flow rate, the first pressure detection element 210 measures the pressure of the gas guide chamber 14, and the second pressure detection element 211 measures the pressure of the process chamber 4. When the measured value of the first pressure detection element 210 is less than the measured value of the second pressure detection element 211, it can be considered that the attached membrane 31 has been attached to the carrier device.

[0100] S2: The pressure of the process chamber 4 and the air guide chamber 14 is adjusted to equal pressure using the vacuum system 2, so that the attached film 31 is released from adsorption with the top surface of the carrier device.

[0101] In this step, the desorption process includes desorption step one and desorption step two. The sign of successful desorption is that the measured value of the first pressure detection element 210 is consistent with the measured value of the second pressure detection element 211.

[0102] Desorption step one: such as Figure 13 As shown, the first valve 206 and the fourth valve 209 are open, the second valve 207 and the third valve 208 are closed, the flow regulating controller is closed, the vacuum component 202 is open, and the residual gas in the bearing device and the first branch pipe 203 is removed. The arrow indicates the airflow direction.

[0103] Desorption step two: such as Figure 14 The first valve 206 and the second valve 207 are open, the third valve 208 and the fourth valve 209 are closed, the flow control controller is closed, and the vacuum component 202 is closed. At this time, the gas guide chamber 14 is connected to the process chamber 4, and the pressure of the two is the same. The attached membrane 31 has been released from adsorption with the chuck. The arrow indicates the airflow direction.

[0104] Specifically, such as Figure 10As shown, this embodiment uses a pressure-controlled process to induce adsorption between the attached film 31 and the carrier device during the residual adhesive removal process, and the adsorption is released after the residual adhesive removal process is completed. The pressure control process in this embodiment is achieved by controlling the on / off state of various valves on the vacuum system 2, and the success of adsorption and desorption is determined by the pressure difference. During the residual adhesive removal process, the process chamber 4 has a certain pressure requirement. The frame-type wafer 3 is etched using plasma. This step requires pressure control on the back side of the frame-type wafer 3 to ensure that the pressure between the attached film 31 and the carrier device on the back side of the frame-type wafer 3 is less than the pressure on the upper surface of the frame-type wafer 3.

[0105] It should be noted that in this embodiment, before executing S1, the process chamber is evacuated to the set pressure required by the desizing process using the original vacuum device (dry pump) in the desizing process chamber. Then, step S1 is executed to further adjust the back pressure of the frame wafer through the vacuum system 2 to complete the wafer adsorption operation.

[0106] The various embodiments of the present invention have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A support device suitable for a frame-type wafer (3), the frame-type wafer (3) comprising a wafer (33), an attachment film (31), and a frame ring (32), the attachment film (31) being fixed to the frame ring (32), and the wafer (33) being attached to the attachment film (31), characterized in that, The carrying device includes: A carrying device body (1) for carrying the frame-type wafer (3). An air guiding cavity (14) is formed inside the carrying device body (1). An air guiding pipeline (17) is provided at the bottom of the carrying device body (1), and the air guiding pipeline (17) is used to communicate with a vacuum pumping system (2); A plurality of air guiding holes (12) communicating with the air guiding cavity (14) are provided on the top surface of the carrying device body (1); The top surface of the carrying device body (1) is substantially a flat surface.

2. The bearing device according to claim 1, characterized in that, The plurality of air guiding holes (12) are arranged on the top surface of the carrying device body (1) into a plurality of concentric circles centered on the center of the carrying device body (1), and the diameters of the concentric circles are all smaller than the diameter of the wafer (33).

3. The carrying device according to claim 2, wherein The plurality of air guiding holes (12) are arranged on the top surface of the carrying device body (1) into three concentric circles centered on the center of the carrying device body (1), and the diameters of the three concentric circles are 0.2 times - 0.3 times, 0.6 times - 0.7 times, and 0.9 times - 1 times of the diameter of the wafer (33) respectively.

4. The carrying device according to any one of claims 1 - 3, wherein The product of the diameter d of the air guiding hole (12) and the air pressure P inside the air guiding hole (12) satisfies: 1.33 Pa·m < Pd < 13.3 Pa·m; or The product of the diameter d of the air guiding hole (12) and the air pressure P inside the air guiding hole (12) satisfies: 1.33 Pa·m < Pd < 6.65 Pa·m.

5. The carrying device according to claim 4, wherein The diameter d of the air guiding hole (12) is less than 1.4 mm.

6. The bearing device according to claim 2, characterized in that, The air guiding cavity (14) includes: A plurality of annular air guiding grooves (15), and the plurality of annular air guiding grooves (15) are correspondingly arranged with the concentric circles formed by the plurality of air guiding holes (12); At least one connecting groove (16), and at least one connecting groove (16) connects the plurality of annular air guiding grooves (15).

7. The carrying device according to claim 6, wherein There are a plurality of the connecting grooves (16), and the plurality of connecting grooves (16) are radially distributed and connect all the annular air guiding grooves (15) along the radial direction of the carrying device body (1).

8. The bearing device according to claim 6, characterized in that, The carrying device body (1) includes: an air guiding layer (11) and a conducting layer (13). The air guiding layer (11) is located on the conducting layer (13), and the air guiding cavity (14) is formed between the air guiding layer (11) and the conducting layer (13); The air guiding holes (12) are provided on the air guiding layer (11), the air guiding holes (12) penetrate through the air guiding layer (11), and the projection of the air guiding holes (12) on the surface of the conducting layer (13) falls into the annular air guiding grooves (15); The top edge of the conducting layer (13) is hermetically connected to the edge of the air guiding layer (11).

9. A semiconductor process apparatus, characterized in that, It includes: A vacuum pumping system (2), a process chamber, and the carrying device according to any one of claims 1 - 8; The support device is located in the process chamber (4), and the vacuum system (2) is connected to the air guide pipe (17) of the support device and the process chamber (4).

10. The semiconductor process equipment according to claim 9, characterized in that, The vacuum system (2) includes: a main pipeline (201), a vacuum component (202), a first branch pipe (203), a second branch pipe (204), and a pressure regulating component (205). The pressure regulating component (205) is connected to one end of the main pipeline (201), and a third valve (208) is provided at the connection between the pressure regulating component (205) and the main pipeline (201). The vacuum pumping component (202) is connected to the other end of the main pipeline (201) to generate negative pressure in the main pipeline (201). A fourth valve (209) is provided at the connection between the vacuum pumping component (202) and the main pipeline (201). The first branch pipe (203) is disposed between the vacuuming component (202) and the pressure regulating component (205), and connects the main pipeline (201) and the air guide pipeline (17) of the bearing device. The first branch pipe (203) is provided with a first valve (206). The second branch pipe (204) is located between the vacuuming component (202) and the pressure regulating component (205), and connects the main pipeline (201) and the process chamber (4). The first branch pipe (203) is provided with a second valve (207).

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