Plasma temperature regulation and control device used in MPCVD crystal growth process

Abstract

The utility model discloses a plasma temperature regulation and control device used in an MPCVD crystal growth process in the field of MPCVD equipment, which comprises a seed crystal tray, a temperature fine adjustment base and a cooling base, the temperature fine adjustment base is connected below the seed crystal tray through a bolt, a temperature fine adjustment module is slidably connected to the center position of the top of the temperature fine adjustment base, and the cooling base is connected with the seed crystal tray through a bolt. A heat insulation base is arranged at the bottom of the temperature fine-tuning module, the temperature fine-tuning module is divided into three layers, the two layers of the outer side of the temperature fine-tuning module are each divided into six disconnected heating blocks, the top of the temperature fine-tuning module is attached to the bottom of the seed crystal tray, and the bottom of the temperature fine-tuning base is connected with a cooling base through threads. According to the cooling device for the seed crystal tray, the whole seed crystal tray can be rapidly cooled, meanwhile, the temperature of a single part of the seed crystal tray can be raised, it is ensured that seed crystal grows evenly, and the machining quality is improved.

Description

Technical Field

[0001] This utility model relates to the field of MPCVD equipment, specifically a plasma temperature control device for MPCVD crystal growth process. Background Technology

[0002] Diamond is a high-performance crystalline material with excellent thermal conductivity, high electron mobility, and high optical transmittance. Currently, diamond crystals are typically prepared using two methods: The first is the high-temperature, high-pressure method, which simulates the growth environment of natural diamond by using high temperature and pressure to transform graphite into diamond. However, due to limitations, this method can only produce small-sized diamonds, and the catalyst used in the process can reduce the purity of the diamond. The second method is microwave plasma chemical vapor deposition (MPCVD), which uses microwave input to excite raw materials such as hydrogen and methane into a plasma state. Carbon atoms then undergo a series of chemical reactions and are deposited onto the substrate surface. This method uses electrodeless discharge, ensuring the purity of the cavity, and is currently the only method that can produce electronic-grade single-crystal diamonds.

[0003] Existing MPCVD equipment may experience crystallization shifts during diamond deposition due to seed placement and equipment errors, reducing diamond quality. Current temperature control devices adjust the overall temperature and cannot fine-tune a portion of the seed tray, making them inconvenient to use. Therefore, those skilled in the art have provided a plasma temperature control device for MPCVD crystal growth to address the problems mentioned in the background. Utility Model Content

[0004] The purpose of this invention is to provide a plasma temperature control device for MPCVD crystal growth process, so as to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A plasma temperature control device for MPCVD crystal growth includes a seed tray, a temperature fine-tuning base, and a cooling base. The temperature fine-tuning base is bolted to the bottom of the seed tray. A temperature fine-tuning module is slidably connected to the top center of the temperature fine-tuning base. A heat-insulating base is provided at the bottom of the temperature fine-tuning module. The temperature fine-tuning module has a three-layer structure. The outer two layers of the temperature fine-tuning module are each divided into six non-connected heating blocks. The top of the temperature fine-tuning module is attached to the bottom of the seed tray. The bottom of the temperature fine-tuning base is threaded to the cooling base. A cooling coil is fixedly connected inside the cooling base. The two ends of the cooling coil are a water inlet pipe and a water outlet pipe, respectively.

[0007] As a further embodiment of this utility model: a tray mounting groove is provided at the center of the temperature fine-tuning base, the seed tray is slidably connected to the tray mounting groove, and annular partition rings are evenly distributed on the top of the temperature fine-tuning base, and the temperature fine-tuning module is slidably connected to the partition rings.

[0008] As a further improvement of this utility model: wire harness mounting holes are provided between the separating rings and at the center of the temperature fine-tuning base. The control wire harness of the temperature fine-tuning module passes through the wire harness mounting holes and extends out from the side of the temperature fine-tuning base. A wire harness collection connector is provided on the side of the temperature fine-tuning base.

[0009] As a further improvement of this utility model: the bottom of the temperature fine-tuning base is provided with a mounting ring, and the mounting ring is provided with an external thread for threaded connection with the cooling base.

[0010] As a further embodiment of this utility model: the bottom of the seed tray is evenly distributed with six connecting threaded holes, the top of the temperature fine-tuning base is evenly distributed with six connecting through holes, the bottom of the temperature fine-tuning base is provided with six connecting bolts that pass through the connecting through holes and are fixedly connected to the connecting threaded holes, and an annular sealing gasket is provided between the connecting bolts and the temperature fine-tuning base.

[0011] As a further embodiment of this utility model: the cooling base is provided with a heat-conducting liquid, the water inlet pipe is located above the water outlet pipe, and the cooling coil is located above the cooling base.

[0012] As a further improvement of this utility model: the bottom of the cooling base is evenly distributed with four support feet, and the support feet are made of heat insulation material.

[0013] Compared with the prior art, the beneficial effects of this utility model are:

[0014] 1. In this utility model, when the crystallization on the seed tray is uneven, the temperature fine-tuning module at the lower temperature point on the seed tray is activated. The heating block changes the temperature of the seed tray by contact heating, so that the different temperatures on the seed tray cancel out the uneven crystallization process, making the crystallization occur uniformly. It is easy to use, and multiple non-contact heating blocks can be used to deal with uneven crystallization in various directions, and the adjustment is more precise.

[0015] 2. In this utility model, by circulating water into the cooling coil, the temperature of the heat-conducting liquid is reduced by heat transfer, thereby reducing the temperature of the cooling base. The cooling base is used to cool the seed tray and the temperature fine-tuning base. The cooling coil is located at the upper part of the cooling base, effectively and reliably cooling the floating high-temperature heat-conducting liquid. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of this utility model;

[0017] Figure 2 This is a top view of the structure of this utility model;

[0018] Figure 3 This is a schematic diagram of the cross-section AA of this utility model;

[0019] Figure 4 This is a schematic diagram of the temperature fine-tuning base in this utility model;

[0020] Figure 5 This is a schematic diagram of the bottom structure of the temperature fine-tuning mechanism in this utility model;

[0021] Figure 6 This is a schematic diagram of the temperature fine-tuning module in this utility model;

[0022] Figure 7 This is a schematic diagram of the bottom structure of the seed tray in this utility model;

[0023] Figure 8 This is a schematic diagram of the cooling coil in this utility model.

[0024] In the diagram: 1. Seed tray; 2. Temperature fine-tuning base; 3. Cooling base; 4. Support foot; 5. Wire harness collection connector; 6. Water inlet pipe; 7. Water outlet pipe; 8. Temperature fine-tuning module; 9. Sealing gasket; 10. Connecting bolt; 11. Cooling coil; 12. Heat transfer fluid; 13. Connecting through hole; 14. Tray mounting groove; 15. Separator ring; 16. Wire harness mounting hole; 17. Mounting ring; 18. Thermal insulation base; 19. Connecting threaded hole. Detailed Implementation

[0025] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0026] Please see Figures 1-8In this embodiment of the invention, a plasma temperature control device for MPCVD crystal growth includes a seed tray 1, a temperature fine-tuning base 2, and a cooling base 3. The temperature fine-tuning base 2 is bolted to the bottom of the seed tray 1. A temperature fine-tuning module 8 is slidably connected to the top center of the temperature fine-tuning base 2. A heat-insulating base 18 is provided at the bottom of the temperature fine-tuning module 8. The temperature fine-tuning module 8 has a three-layer structure. The outer two layers of the temperature fine-tuning module 8 are each divided into six non-connected heating blocks. The top of the temperature fine-tuning module 8 is attached to the bottom of the seed tray 1. When the crystallization process on the seed tray 1 becomes uneven and shifts, the temperature at different positions on the seed tray 1 is changed, thereby controlling the crystallization speed in different directions. The bottom of the temperature fine-tuning base 2 is connected to the cooling base 3 by threads. A cooling coil 11 is fixedly connected inside the cooling base 3. The two ends of the cooling coil 11 are the water inlet pipe 6 and the water outlet pipe 7, respectively. The cooling water is used to change the temperature of the temperature fine-tuning base 2 through the cooling coil 11, thereby reducing the temperature of the seed tray 1 connected to the temperature fine-tuning base 2 and controlling the processing process of the MPCVD equipment.

[0027] The temperature fine-tuning base 2 has a tray mounting groove 14 at its center, the seed tray 1 is slidably connected to the tray mounting groove 14, and the top of the temperature fine-tuning base 2 is evenly distributed with annular partition rings 15. The temperature fine-tuning module 8 is slidably connected to the partition rings 15 to prevent the heating plate of the temperature fine-tuning module 8 from contacting the heating plate.

[0028] Among them, wire harness mounting holes 16 are provided between the partition rings 15 and at the center of the temperature fine-tuning base 2. The control wire harness of the temperature fine-tuning module 8 passes through the wire harness mounting holes 16 and extends out from the side of the temperature fine-tuning base 2. The side of the temperature fine-tuning base 2 is provided with a wire harness collection connector 5 for easy use.

[0029] The temperature fine-tuning base 2 has a mounting ring 17 at its bottom, and the mounting ring 17 has an external thread that connects to the cooling base 3, making installation convenient and quick.

[0030] The seed tray 1 has six threaded holes 19 evenly distributed on its bottom, and the temperature fine-tuning base 2 has six through holes 13 evenly distributed on its top. The temperature fine-tuning base 2 has six connecting bolts 10 that pass through the through holes 13 and are fixedly connected to the threaded holes 19. An annular sealing gasket 9 is provided between the connecting bolts 10 and the temperature fine-tuning base 2 to prevent the heat-conducting liquid 12 from seeping into the interior of the temperature fine-tuning base 2.

[0031] The cooling base 3 is equipped with a heat-conducting liquid 12, the water inlet pipe 6 is located above the water outlet pipe 7, and the cooling coil 11 is located above the cooling base 3. The heat-conducting liquid 12 can be rapidly cooled by circulating cold water, thereby cooling the temperature fine-tuning base 2 and the seed tray 1.

[0032] The bottom of the cooling base 3 is evenly distributed with four support feet 4. The support feet 4 are made of heat insulation material to prevent heat transfer between the cooling base 3 and the workbench.

[0033] The working principle of this utility model is as follows: The MPCVD equipment is connected to the seed tray 1. When it is necessary to cool the seed tray 1, low-temperature circulating water is introduced into the inlet pipe 6. The circulating water passes through the cooling coil 11 and is discharged from the outlet pipe 7. During this process, the heat-conducting liquid 12 is cooled through heat transfer, which lowers the temperature of the cooling base 3, thereby cooling the temperature fine-tuning base 2 and the seed tray 1 connected to it. The cooling process is stable and easy to use. When uneven crystallization occurs during the MPCVD equipment processing, the temperature fine-tuning module 8 at the seed tray 1 position where crystallization is slower is activated. The heating block changes the temperature of the seed tray 1 through contact heating, so that the temperature difference on the seed tray 1 cancels out the uneven crystallization process, making the crystallization uniform. It is easy to use. Multiple non-contact heating blocks can be used for uneven crystallization in various directions, making the adjustment more precise and improving the processing quality and work efficiency.

[0034] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A plasma temperature control device for MPCVD crystal growth process, comprising a seed tray (1), a temperature fine-tuning base (2), and a cooling base (3), characterized in that: The seed tray (1) is bolted to a temperature fine-tuning base (2). A temperature fine-tuning module (8) is slidably connected to the top center of the temperature fine-tuning base (2). A heat insulation base (18) is provided at the bottom of the temperature fine-tuning module (8). The temperature fine-tuning module (8) has a three-layer structure. The outer two layers of the temperature fine-tuning module (8) are each divided into six non-connected heating blocks. The top of the temperature fine-tuning module (8) is attached to the bottom of the seed tray (1). A cooling base (3) is threaded to the bottom of the temperature fine-tuning base (2). A cooling coil (11) is fixedly connected inside the cooling base (3). The two ends of the cooling coil (11) are a water inlet pipe (6) and a water outlet pipe (7), respectively.

2. The plasma temperature control device for MPCVD crystal growth process according to claim 1, characterized in that: The temperature fine-tuning base (2) is provided with a tray mounting groove (14) at its center. The seed tray (1) is slidably connected to the tray mounting groove (14). The top of the temperature fine-tuning base (2) is evenly distributed with annular partition rings (15). The temperature fine-tuning module (8) is slidably connected to the partition rings (15).

3. The plasma temperature control device for MPCVD crystal growth process according to claim 2, characterized in that: A wire harness mounting hole (16) is provided between the partition rings (15) and at the center of the temperature fine-tuning base (2). The control wire harness of the temperature fine-tuning module (8) passes through the wire harness mounting hole (16) and extends out from the side of the temperature fine-tuning base (2). A wire harness collection connector (5) is provided on the side of the temperature fine-tuning base (2).

4. The plasma temperature control device for MPCVD crystal growth process according to claim 1, characterized in that: The temperature fine-tuning base (2) is provided with a mounting ring (17) at its bottom, and the mounting ring (17) is provided with an external thread for threaded connection with the cooling base (3).

5. A plasma temperature control device for MPCVD crystal growth process according to claim 1, characterized in that: The bottom of the seed tray (1) is evenly distributed with six threaded holes (19), and the top of the temperature fine-tuning base (2) is evenly distributed with six through holes (13). The bottom of the temperature fine-tuning base (2) is provided with six connecting bolts (10) that pass through the through holes (13) and are fixedly connected to the threaded holes (19). An annular sealing gasket (9) is provided between the connecting bolts (10) and the temperature fine-tuning base (2).

6. The plasma temperature control device for MPCVD crystal growth process according to claim 1, characterized in that: The cooling base (3) is filled with a heat-conducting liquid (12), the water inlet pipe (6) is located above the water outlet pipe (7), and the cooling coil (11) is located above the cooling base (3).

7. A plasma temperature control device for MPCVD crystal growth process according to claim 1, characterized in that: The bottom of the cooling base (3) is evenly distributed with four support feet (4), and the support feet (4) are made of heat insulation material.

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