Cavity structure for horizontal electroplating of single wafer

Abstract

The utility model discloses a cavity structure for horizontal electroplating of a single wafer. The cavity structure comprises a main cavity, the separation assembly is arranged in the main cavity and comprises an ionic membrane, and the ionic membrane is used for separating anolyte and catholyte and dividing the main cavity into an anode chamber located below the ionic membrane and a cathode chamber located above the ionic membrane; the flow uniformizing plate is arranged in the cathode chamber, and a plurality of flow uniformizing holes are formed in the flow uniformizing plate; and the disturbance assembly comprises a disturbance piece located above the flow uniformizing plate and a driving assembly arranged on the main cavity, and the driving assembly is used for driving the disturbance piece to enable the disturbance piece to stir liquid in the cathode chamber. According to the cavity structure for the horizontal electroplating of the single wafer, through the synergistic effect of physical separation, flow field reconstruction and active disturbance, the uniformity of the thickness of an electroplated layer on the surface of the wafer is remarkably improved.

Description

Technical Field

[0001] This utility model belongs to the technical field of wafer electroplating equipment, specifically relating to a cavity structure for horizontal electroplating of a single wafer. Background Technology

[0002] In a single-wafer horizontal electroplating apparatus, the wafer is placed in the cathode cavity with its plating surface facing downwards and kept horizontal. The anode is placed in the anode cavity directly below the cathode cavity. During electroplating, placing the wafer with the plating surface horizontally ensures that only the plating surface comes into contact with the electroplating solution, significantly reducing liquid consumption and cavity depth.

[0003] Traditional vertical electroplating requires the wafer to be completely immersed in the plating solution, resulting in a large consumption of plating solution and a large equipment size. Furthermore, due to gravity, uneven plating thickness and air bubble retention are easily caused in the holes, which seriously damages the continuity and integrity of the plating layer and constitutes wafer plating quality defects.

[0004] Horizontal electroplating can improve the defects of vertical electroplating, but it also has some problems: uneven flow field distribution in the electroplating chamber leads to insufficient uniformity of the coating thickness on the wafer surface; slow diffusion of metal ions during electroplating leads to uneven deposition rate, and the accumulation of impurities in the electroplating solution affects purity.

[0005] Therefore, in response to the aforementioned technical problems, it is necessary to provide further improvements to the horizontal electroplating apparatus.

[0006] The information disclosed in this background section is intended only to enhance the understanding of the overall background of this utility model and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Utility Model Content

[0007] The purpose of this invention is to provide a horizontal electroplating cavity structure for a single wafer, which significantly improves the uniformity of the electroplating layer thickness on the wafer surface through the synergistic effect of physical separation, flow field reconstruction and active disturbance.

[0008] To achieve the above objectives, the technical solution provided by a specific embodiment of this utility model is as follows:

[0009] A horizontal electroplating cavity structure for monolithic wafers, comprising:

[0010] main cavity;

[0011] A separation assembly, disposed in the main cavity, includes an ion membrane, which is used to separate the anolyte and the catholyte and divide the main cavity into an anode chamber located below the ion membrane and a cathode chamber located above the ion membrane;

[0012] A flow equalization plate is disposed in the cathode chamber, and the flow equalization plate is provided with a plurality of flow equalization holes;

[0013] The disturbance assembly includes a disturbance element located above the flow equalizer and a drive assembly disposed on the main cavity, the drive assembly being used to drive the disturbance element to agitate the liquid in the cathode chamber.

[0014] In one or more embodiments of this utility model, the bottom surface of the flow equalization plate is recessed inward.

[0015] In one or more embodiments of this utility model, the disturbance component includes a support frame and a plurality of disturbance rods arranged parallel to the support frame. The disturbance rod includes a bottom surface, a top surface and two side surfaces, the two side surfaces being recessed inward toward the interior of the disturbance rod, and the side surfaces being arc-shaped surfaces.

[0016] In one or more embodiments of this utility model, the driving assembly includes a mounting base disposed on the outer wall of the main cavity, a guide rail disposed on the mounting base, a sliding plate slidably disposed on the guide rail, a sliding hole perpendicular to the guide rail disposed on the sliding plate, a slider slidably disposed on the sliding plate, the slider being connected to a disturbance member, a servo motor disposed on the bottom surface of the mounting base, and the bottom surface of the slider extending into the sliding hole and connected to the output shaft of the servo motor.

[0017] In one or more embodiments of the present invention, a boss is provided on the inner sidewall of the main cavity, the separation component includes a membrane frame ring disposed on the boss, and the ion membrane is disposed on the membrane frame ring.

[0018] In one or more embodiments of this utility model, an anode disk and an anode plate located on the bottom surface of the main cavity are provided, a liquid-blocking ring is provided around the anode disk, and the liquid-blocking ring is provided with a liquid inlet hole;

[0019] The bottom of the main cavity is provided with a first flow channel, and the inner side wall of the anode chamber is provided with a flow hole communicating with the first flow channel;

[0020] An outlet is formed between the bottom surface of the membrane frame ring and the side surface of the boss. The top surface of the boss is provided with an outlet groove located below the membrane frame ring and communicating with the outlet along the circumference of the main cavity. A second flow channel is provided at the bottom of the main cavity, and an outlet flow channel communicating with the outlet groove is provided on the side wall of the second flow channel.

[0021] In one or more embodiments of this utility model, a flow equalization ring and a support ring are provided on the protrusion. The flow equalization ring is located outside the membrane frame ring, and the support ring is located between the inner wall of the main cavity and the flow equalization ring. The support ring is used to install the flow equalization plate.

[0022] The outer peripheral sidewall of the flow equalizer is provided with two protruding rings. The two protruding rings are used to fit against the inner peripheral sidewall of the support ring so that a liquid inlet gap is formed between the support ring and the flow equalizer. The sidewall of the flow equalizer is provided with a liquid inlet hole that communicates with the liquid inlet gap and the cathode chamber.

[0023] The inner wall of the main cavity is provided with a groove along its circumference to form a liquid inlet channel between the inner wall of the main cavity and the support ring. The support ring is provided with a communication hole that communicates with the liquid inlet channel and the liquid inlet gap. The bottom surface of the main cavity is provided with a cathodic liquid inlet, which is connected to the liquid inlet channel.

[0024] The main cavity has a drainage groove along the circumferential direction on the top surface, a third flow channel at the bottom of the main cavity, a drainage port communicating with the third flow channel on the bottom surface of the main cavity, and a drainage hole communicating with the third flow channel on the bottom surface of the drainage groove.

[0025] In one or more embodiments of this utility model, the liquid inlet hole is inclined downward from the outside to the inside.

[0026] In one or more embodiments of the present invention, the separating component includes a conical skeleton with a protrusion at the top of the skeleton facing the anode chamber, and the ion membrane is disposed on the skeleton.

[0027] In one or more embodiments of this utility model, a water-blocking cover is provided on the top surface of the main cavity.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] 1. The flow equalization plate is embedded in the inner wall of the cathode chamber and sealed with an O-ring. The flow equalization hole on its surface is opened to reconstruct the flow field, and the concave surface forms a gradually expanding flow channel to guide the liquid to diverge along the normal direction, which significantly improves the problem of uneven electroplating caused by fluid inertia and boundary effects.

[0030] 2. The disturbance component is fixed to the upper end face of the main cavity through the motor mounting base. The disturbance component forms a special airfoil protrusion structure through the connecting airfoil component. It is driven by two servo motors on the side to reciprocate and swing, which accelerates ion diffusion and realizes deep hole electroplating of the wafer.

[0031] 3. The bottom of the main chamber is equipped with a circulating inlet and outlet liquid system: the anolyte enters the anode chamber through the inlet hole on the baffle ring in the anode plate via the innermost first flow channel, and then flows into the second flow channel through the outlet to be discharged; the catholyte enters the cathode chamber through the downward-sloping inlet hole of the flow equalization ring via the outermost catholyte inlet, and then flows into the outermost third flow channel through the upper drainage trough to be discharged. All inlet and outlet liquid routes are independent of each other, which can effectively prevent cross-contamination and pressure fluctuation interference. The high-level inlet liquid uses gravity potential energy to maintain a stable inlet pressure and ensure flow uniformity, while the low-level outlet liquid relies on gravity for self-drainage, eliminating flow dead zones. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of a horizontal electroplating cavity structure for a single wafer in one embodiment of the present invention;

[0034] Figure 2 This is an exploded view of a horizontal electroplating cavity structure for a single wafer according to one embodiment of the present invention;

[0035] Figure 3 This is a cross-sectional view of a horizontal electroplating cavity structure for a single wafer according to an embodiment of the present invention. Figure 1 ;

[0036] Figure 4 This is a cross-sectional view of a horizontal electroplating cavity structure for a single wafer according to an embodiment of the present invention. Figure 2 ;

[0037] Figure 5 This is a bottom view of a horizontal electroplating cavity structure for a single wafer in one embodiment of the present invention;

[0038] Figure 6 This is a cross-sectional view of a horizontal electroplating cavity structure for a single wafer according to an embodiment of the present invention. Figure 3 ;

[0039] Figure 7 for Figure 6 Enlarged view of section A;

[0040] Figure 8 for Figure 6 Enlarged view of section B;

[0041] Figure 9 This is a cross-sectional view of the flow uniform plate;

[0042] Figure 10 This is a schematic diagram of the disturbance component;

[0043] Figure 11 for Figure 3 Enlarged view of section C.

[0044] Explanation of key figure labels:

[0045] 1. Main cavity; 11. Threaded hole; 111. First flow channel; 112. Liquid inlet; 113. Liquid outlet; 114. Second flow channel; 115. Liquid outlet; 116. Liquid outlet flow channel; 117. Liquid inlet flow channel; 1171. Cathode liquid inlet; 118. Third flow channel; 1181. Liquid outlet; 119. Liquid outlet groove; 1191. Liquid outlet hole; 12. Boss; 121. Liquid outlet; 122. Liquid outlet groove; 13. Anode chamber; 14. Cathode chamber; 2. Water baffle; 31. Anode plate; 311. Liquid baffle ring; 312. Mounting hole; 313. Liquid inlet; 32. Anode plate; 41. Membrane frame ring; 420. Skeleton; 42. Ion exchange membrane; 51. Flow equalization ring; 511. Protruding ring; 512. Liquid inlet gap; 513. Liquid inlet hole; 52. Support ring; 521. Connecting hole; 522. Sealing groove; 53. Flow equalization plate; 531. Flow equalization hole; 61. Disruptor; 611. Support frame; 612. Disruptor rod; 613. Connecting rod; 70. Mounting bracket; 71. Mounting base; 711. Clearance hole; 72. Servo motor; 73. Guide rail; 74. Sliding plate; 741. Sliding hole; 75. Slider; 76. Connector; 77. Airfoil; 78. Protective cover. Detailed Implementation

[0046] To enable those skilled in the art to better understand the technical solutions of this utility model, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of this utility model.

[0047] like Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the horizontal electroplating cavity structure for a single wafer includes a main cavity 1 and a water shield 2 disposed on the top surface of the main cavity 1. The water shield 2 can effectively block liquid splashing during wafer cleaning.

[0048] Combination Figures 3-5 An anode plate 31 is provided on the bottom surface of the main cavity 1. A liquid-retaining ring 311 is provided around the anode plate 31. An anode plate 32 is provided on the anode plate 31. A threaded hole 11 is provided at the bottom of the main cavity 1. A mounting hole 312 corresponding to the threaded hole 11 is provided on the anode plate 31. A screw is screwed into the threaded hole 11 at the bottom of the main cavity 1 and inserted into the mounting hole 312 to fix the anode plate 31 to the bottom of the main cavity 1. At the same time, the anode plate 32 is energized through the threaded hole 11 and the mounting hole 312.

[0049] Combination Figure 6 and Figure 7The main cavity 1 has a boss 12 on its inner wall and a partition assembly inside. The partition assembly includes a membrane frame ring 41, a skeleton 420, and an ion membrane 42. The ion membrane 42 is disposed on the skeleton 420, and the skeleton 420 is disposed on the membrane frame ring 41. The bottom surface of the membrane frame ring 41 is attached to the top surface of the boss 12 to divide the interior of the main cavity 1 into an anode chamber 13 and a cathode chamber 14. The anode chamber 13 is located below the ion membrane 42, and the cathode chamber 14 is located above the ion membrane 42. The ion membrane 42 separates the anolyte in the anode chamber 13 from the catholyte in the cathode chamber 14. The skeleton 420 is generally conical with a protrusion at the top (the through hole at the center of the protrusion shown in the figure is blocked in actual application). The protrusion faces the anode chamber 13. This shape facilitates full contact between the ion membrane 42 and the anolyte.

[0050] Combination Figure 5 and Figure 7 The main cavity 1 has a first flow channel 111 at its bottom and an inlet 112 communicating with the first flow channel 111. The inner wall of the anode chamber 13 has a flow hole 113 communicating with the first flow channel 111. The baffle ring 311 on the anode plate 31 has an inlet 313. An outlet 121 is provided between the side periphery of the boss 12 and the bottom surface of the membrane frame ring 41. The top surface of the boss 12 has an outlet groove 122 below the membrane frame ring 41, and the outlet groove 122 communicates with the outlet 121. The main cavity 1 has a second flow channel 114 at its bottom and an outlet hole 115 communicating with the second flow channel 114. The side wall of the second flow channel 114 has an outlet flow channel 116 communicating with the outlet groove 122.

[0051] The anolyte flows into the first flow channel 111 from the inlet 112, enters the anode chamber 13 through the flow hole 113 on the side wall of the first flow channel 111, and then flows into the anode plate 31 through the inlet hole 313 on the baffle ring 311 to contact the anode plate 32. As the anolyte gradually fills the anode chamber 13, it flows into the outlet tank 122 from the outlet 121, then into the second flow channel 114 through the outlet flow channel 116, and finally flows out from the outlet hole 115, completing the anolyte circulation.

[0052] Combination Figure 8The boss 12 is provided with a flow equalization ring 51 and a support ring 52. The flow equalization ring 51 is located outside the membrane frame ring 41, and the outer peripheral sidewall of the membrane frame ring 41 is attached to the inner peripheral sidewall of the flow equalization ring 51. The support ring 52 is located outside the flow equalization ring 51, and the outer peripheral sidewall of the flow equalization ring 51 is attached to the inner sidewall of the support ring 52. The outer peripheral sidewall of the support ring 52 is attached to the inner sidewall of the main cavity 1. The outer peripheral sidewall of the flow equalization ring 51 is provided with protruding rings 511 at both the top and bottom of the flow equalization ring 51. The two protruding rings 511 are attached to the inner sidewall of the support ring 52, so that the two protruding rings 511 and the support ring 52 form a liquid inlet gap 512. The flow equalization ring 51 is provided with a liquid inlet hole 513, which is inclined downward from the outside to the inside. The liquid inlet hole 513 connects the liquid inlet gap 512 and the cathode chamber 14.

[0053] Combination Figure 5 , Figure 7 and Figure 8 The inner wall of the main cavity 1 has a groove along its circumference, and the support ring 52 seals the groove to form a liquid inlet channel 117 between the inner wall of the main cavity 1 and the support ring 52. Simultaneously, the support ring 52 has a connecting hole 521 that connects the liquid inlet channel 117 and the liquid inlet gap 512. The bottom surface of the main cavity 1 has a cathode liquid inlet 1171. Figure 7 (as shown by the dashed line) The cathode liquid inlet 1171 extends from top to top and connects to the liquid inlet channel 117, so that the cathode liquid enters the cathode chamber 14 sequentially through the cathode liquid inlet 1171, the liquid inlet channel 117, the connecting hole 521, the liquid inlet gap 512 and the liquid inlet hole 513.

[0054] A flow equalization plate 53 is provided on the support ring 52. The outer peripheral sidewall of the flow equalization plate 53 is attached to the inner peripheral sidewall of the main cavity 1. A sealing groove 522 is provided circumferentially on the top surface of the support ring 52, and a sealing ring is provided in the sealing groove 522 to seal the gap between the flow equalization plate 53 and the support ring 52. Several flow equalization holes 531 are provided through the flow equalization plate 53 to reconstruct the flow field. Figure 9 The bottom surface of the flow equalizer 53 is recessed towards the interior of the flow equalizer 53. The concave surface of the flow equalizer 53 can form a gradually expanding flow channel, which allows the electrolyte to flow in a divergent direction along the normal direction, effectively alleviating the uneven electroplating caused by fluid inertia and boundary effects.

[0055] The bottom of the main cavity 1 is provided with a third flow channel 118, and the bottom surface is provided with a drain port 1181 communicating with the third flow channel 118. The top surface of the main cavity 1 is provided with a drain groove 119 along the circumference, and the inside of the main cavity 1 is provided with a drain hole 1191, which communicates with the drain groove 119 and the third flow channel 118 (e.g., Figure 8(As shown by the dashed line). As the cathode liquid gradually fills the cathode chamber 14, the rising cathode liquid overflows from the top surface of the main cavity 1 and flows into the drain tank 119, then flows into the third flow channel 118 through the drain hole 1191, and finally flows out from the drain port 1181, completing the circulation of the cathode liquid.

[0056] Combination Figure 2 and Figure 10 The main cavity 1 also houses a disturbance assembly located in the cathode chamber 14 to agitate the cathodic liquid within the cathode chamber 14. The disturbance assembly includes a disturbance element 61 located above the flow equalization plate 53 and a drive assembly for reciprocating the disturbance element 61. The disturbance element 61 includes a support frame 611, within which several parallel disturbance rods 612 are arranged. Connecting rods 613 connect the disturbance rods 612. Each disturbance rod 612 includes a bottom surface, a top surface, and two side surfaces, the two side surfaces being recessed inwards. The side surfaces are curved, allowing the disturbance rods 612 to agitate the cathodic liquid more gently, reducing the possibility of liquid splashing.

[0057] Combination Figure 2 and Figure 11 The drive assembly includes a mounting bracket 70 located at the top of the main cavity 1. The mounting bracket 70 has two opposing mounting seats 71. A servo motor 72 is mounted on the bottom surface of each mounting seat 71. The mounting seat 71 has clearance holes 711 for the output shaft of the servo motor 72 to extend out. Two parallel guide rails 73 are located on the top surface of the mounting seat 71. A slidable sliding plate 74 is connected to both guide rails 73. The sliding plate 74 has sliding holes 741 perpendicular to the guide rails 73. A slidable slider 75 is mounted on the sliding plate 74. The bottom surface of the slider 75 extends into the sliding holes 741 and connects to the output shaft of the servo motor 72. A connecting member 76 is provided on the slider 75. The connecting member 76 is connected to an airfoil 77, which extends into the main cavity 1 and connects to a disturbance member 61. By activating the servo motor 72, the disturbance component 61 is driven to oscillate back and forth, acting as the final flow field control layer to adjust the water flow direction, accelerate ion diffusion, and achieve deep hole electroplating on the wafer. The outer wall of the main cavity 1 is also equipped with a protective cover 78 covering the drive components for protection.

[0058] In summary, this invention utilizes an ion exchange membrane 42 to separate the liquid, forming a cathode chamber 14 and an anode chamber 13 inside the main cavity 1. A circulating liquid inlet / outlet system is installed at the bottom of the main cavity 1. The anolyte enters the anode chamber 13 through the inlet hole 313 on the baffle ring 311 in the innermost first flow channel 111, and then flows into the second flow channel 114 through the outlet 121 for discharge. The catholyte enters the cathode chamber 14 through the downwardly tilted inlet hole 513 of the flow equalization ring 51 through the outermost catholyte inlet 1171, and then flows into the outermost third flow channel 118 through the upper drain trough 119 for discharge. Simultaneously, the flow field is reconstructed using a flow equalization plate 53, and the liquid is actively disturbed using a disturbance element 61. Under the synergistic effect of the circulating liquid inlet / outlet system, the flow equalization plate 53, the disturbance element 61, the physical separation, the flow reconstruction, and the active disturbance, the uniformity of the electroplated layer thickness on the wafer surface is significantly improved.

[0059] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0060] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A cavity structure for horizontal electroplating of a single wafer, characterized in that, include: main cavity; A separation assembly, disposed in the main cavity, includes an ion membrane, which is used to separate the anolyte and the catholyte and divide the main cavity into an anode chamber located below the ion membrane and a cathode chamber located above the ion membrane; A flow equalization plate is disposed in the cathode chamber, and the flow equalization plate is provided with a plurality of flow equalization holes; The disturbance assembly includes a disturbance element located above the flow equalizer and a drive assembly disposed on the main cavity, the drive assembly being used to drive the disturbance element to agitate the liquid in the cathode chamber.

2. The horizontal electroplating cavity structure for a single wafer according to claim 1, characterized in that, The bottom surface of the flow equalizer is recessed inwards.

3. The horizontal electroplating cavity structure for a single wafer according to claim 1, characterized in that, The disturbance component includes a support frame and several disturbance rods arranged parallel to the support frame. Each disturbance rod includes a bottom surface, a top surface, and two side surfaces. The two side surfaces are recessed inward toward the interior of the disturbance rod and are arc-shaped.

4. The horizontal electroplating cavity structure for a single wafer according to claim 1, characterized in that, The drive assembly includes a mounting base on the outer wall of the main cavity, a guide rail on the mounting base, a sliding plate slidably mounted on the guide rail, a sliding hole perpendicular to the guide rail on the sliding plate, a slider slidably mounted on the sliding plate, the slider being connected to a disturbance component, a servo motor on the bottom surface of the mounting base, and the bottom surface of the slider extending into the sliding hole and connected to the output shaft of the servo motor.

5. The horizontal electroplating cavity structure for a single wafer according to claim 1, characterized in that, The inner wall of the main cavity is provided with a boss, and the separation assembly includes a membrane frame ring provided on the boss, and the ion membrane is provided on the membrane frame ring.

6. The horizontal electroplating cavity structure for a single wafer according to claim 5, characterized in that, The bottom surface of the main cavity is provided with an anode disk and an anode plate located on the anode disk. A liquid-retaining ring is provided around the anode disk, and the liquid-retaining ring is provided with a liquid inlet hole. The bottom of the main cavity is provided with a first flow channel, and the inner side wall of the anode chamber is provided with a flow hole communicating with the first flow channel; An outlet is formed between the bottom surface of the membrane frame ring and the side surface of the boss. The top surface of the boss is provided with an outlet groove located below the membrane frame ring and communicating with the outlet along the circumference of the main cavity. A second flow channel is provided at the bottom of the main cavity, and an outlet flow channel communicating with the outlet groove is provided on the side wall of the second flow channel.

7. The horizontal electroplating cavity structure for a single wafer according to claim 5, characterized in that, The protrusion is provided with a flow equalization ring and a support ring. The flow equalization ring is located outside the membrane frame ring, and the support ring is located between the inner wall of the main cavity and the flow equalization ring. The support ring is used to install the flow equalization plate. The outer peripheral sidewall of the flow equalizer is provided with two protruding rings. The two protruding rings are used to fit against the inner peripheral sidewall of the support ring so that a liquid inlet gap is formed between the support ring and the flow equalizer. The sidewall of the flow equalizer is provided with a liquid inlet hole that communicates with the liquid inlet gap and the cathode chamber. The inner wall of the main cavity is provided with a groove along its circumference to form a liquid inlet channel between the inner wall of the main cavity and the support ring. The support ring is provided with a communication hole that communicates with the liquid inlet channel and the liquid inlet gap. The bottom surface of the main cavity is provided with a cathodic liquid inlet, which is connected to the liquid inlet channel. The main cavity has a drainage groove along the circumferential direction on the top surface, a third flow channel at the bottom of the main cavity, a drainage port communicating with the third flow channel on the bottom surface of the main cavity, and a drainage hole communicating with the third flow channel on the bottom surface of the drainage groove.

8. The horizontal electroplating cavity structure for a single wafer according to claim 7, characterized in that, The liquid inlet is inclined downwards from the outside to the inside.

9. The horizontal electroplating cavity structure for a single wafer according to claim 1, characterized in that, The separation assembly includes a conical frame with a protrusion at the top, the protrusion facing the anode chamber, and the ion membrane disposed on the frame.

10. The horizontal electroplating cavity structure for a single wafer according to claim 1, characterized in that, The top surface of the main cavity is equipped with a water-blocking cover.

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