Millimeter wave radar radio frequency transmitter test system

Abstract

The utility model discloses a millimeter wave radar radio frequency transmitter test system, which relates to the technical field of millimeter wave radars and comprises a signal generator, a power amplifier, a radio frequency change-over switch, a radio frequency transmitter, a power meter, a spectrum analyzer, a controller module and a display module. Through an automatic test process, the test efficiency is remarkably improved, the test cost is reduced, the operation process is simplified, and the accuracy of a test result is ensured. Through an automatic testing process, the testing efficiency is remarkably improved; due to the integrated design, the complexity and the cost of test equipment are reduced; the system is friendly in operation interface and easy to use by operators; and through high-precision measuring equipment and a controller, the accuracy of a test result is ensured.

Description

Technical Field

[0001] This utility model relates to the field of millimeter-wave radar technology, and in particular to a millimeter-wave radar radio frequency transmitter testing system. Background Technology

[0002] For radar system testing, the common technique is to use an air-fed (air-propagated) receiver to receive the radar signal under test. The radar is placed in front of the horn antenna connected to the spectrum analyzer by means of a fixture or manual placement. The test position is determined by the placement position, and then the spectrum analyzer is used to read the test results.

[0003] The radio frequency transmitter of millimeter-wave radar is one of the core components of a millimeter-wave radar system, and its performance directly affects the overall performance of the radar system.

[0004] Therefore, accurate testing of millimeter-wave radar radio frequency transmitters is a crucial step in ensuring that their performance meets design requirements.

[0005] Traditional testing methods typically rely on complex testing equipment and cumbersome operating procedures, resulting in problems such as low testing efficiency, high cost, and complex operation. Utility Model Content

[0006] The purpose of this invention is to provide a millimeter-wave radar radio frequency transmitter testing system to address the shortcomings and deficiencies of existing technologies, thereby solving problems such as low testing efficiency, high cost, and complex operation in existing technologies.

[0007] To achieve the above objectives, this utility model provides the following technical solution:

[0008] A millimeter-wave radar radio frequency transmitter test system includes a signal generator, a power amplifier, a radio frequency switching switch, a radio frequency transmitter, a power meter, a spectrum analyzer, a controller module, a display module, a memory module, a clock module, an interface module, and a power supply module.

[0009] The signal generator is connected to the radio frequency transmitter in sequence via a power amplifier and a radio frequency switching switch. The radio frequency transmitter is connected to the controller module via a power meter and a spectrum analyzer. The display module, memory module, clock module, interface module and power supply module are connected to the controller module.

[0010] As a further preferred embodiment of the millimeter-wave radar radio frequency transmitter testing system of this utility model,

[0011] A signal generator is used to generate test signals of a specific frequency and power.

[0012] A power amplifier is used to amplify the power of a test signal to meet the input requirements of an RF transmitter.

[0013] RF switching switch is used to switch different test signals to the RF transmitter;

[0014] Radio frequency transmitter, used for the millimeter-wave radar radio frequency transmitter under test;

[0015] A power meter is used to measure the output power of an RF transmitter.

[0016] A spectrum analyzer is used to analyze the spectral characteristics of the output signal of a radio frequency transmitter.

[0017] The controller module is used to control the operation of the entire test system, including setting the frequency and power of the signal generator, switching the RF switch, and acquiring and analyzing data from the power meter and spectrum analyzer.

[0018] The display module is used to display test results and system status.

[0019] The power module is used to provide the required electrical energy.

[0020] As a further preferred embodiment of the millimeter-wave radar RF transmitter test system of this utility model, the RF switching switch includes an RF terminal, a first NMOS transistor Q1, a second NMOS transistor Q2, a third NMOS transistor Q3, a fourth NMOS transistor Q4, a fifth NMOS transistor Q5, a sixth NMOS transistor Q6, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, an RF ANT terminal, a voltage VCTRL terminal, and a voltage VCTRI terminal.

[0021] The RF terminal is connected to one end of the fifth resistor R5, one end of the seventh resistor R7, the drain of the third NMOS transistor Q3, and the drain of the fourth NMOS transistor Q4. The other end of the fifth resistor R5 is connected to the source of the third NMOS transistor Q3, the drain of the second NMOS transistor Q2, and one end of the third resistor R3. The other end of the third resistor R3 is connected to the source of the second NMOS transistor Q2, the drain of the first NMOS transistor Q1, and one end of the first resistor R1. The other end of the first resistor R1 is connected to the source of the first NMOS transistor Q1 and grounded. The base of the first NMOS transistor Q1 is also connected to the first NMOS transistor Q1. The anode of the first diode is connected to the gate of the first NMOS transistor Q1, and one end of the second resistor R2 is connected to the gate of the first NMOS transistor Q1. The other end of the second resistor R2 is connected to one end of the fourth resistor R4 and the voltage VCTRI terminal. One end of the sixth resistor R6 is connected to the gate of the second NMOS transistor Q2 and the cathode of the second diode D2. The anode of the second diode D2 is connected to the base of the second NMOS transistor Q2. The other end of the sixth resistor R4 is connected to the gate of the third NMOS transistor Q3 and the cathode of the third diode D3. The anode of the third diode D3 is connected to the base of the third NMOS transistor Q3.

[0022] The gate of the fourth NMOS transistor Q4 is connected to the cathode of the fourth diode D4 and one end of the eighth resistor R8. The other end of the seventh resistor R7 is connected to the source of the fourth NMOS transistor Q4, the drain of the fifth NMOS transistor Q5, and one end of the ninth resistor R9. The gate of the fifth NMOS transistor Q5 is connected to one end of the tenth resistor R10 and the cathode of the fifth diode D5. The anode of the fifth diode D5 is connected to the base of the fifth diode D5. The source of the fifth NMOS transistor Q5 is connected to the other end of the ninth resistor R9, one end of the eleventh resistor R11, and the drain of the sixth NMOS transistor Q6. The gate of the sixth NMOS transistor Q6 is connected to one end of the twelfth resistor R12 and the cathode of the sixth diode D6. The anode of the sixth diode D6 is connected to the base of the sixth diode D6. The other end of the twelfth resistor R12 is connected to the other end of the eighth resistor R8. The other end of the tenth resistor R10 is connected to the voltage VCTRL terminal. The source of the sixth NMOS transistor Q6 is connected to the other end of the eleventh resistor R11 and the RF ANT terminal.

[0023] As a further preferred embodiment of the millimeter-wave radar RF transmitter test system of this utility model, the controller module includes a data acquisition and control module, a data processing module and a RAM read / write module, an interface chip control unit, a synchronous clock control module, a command frame de-framing module, a data interpretation module, as well as a power supply circuit, a reset circuit, a crystal oscillator circuit, a download circuit, and a configuration SPI Flash circuit. The data acquisition and control module, the interface chip control unit, the synchronous clock control module, the command frame de-framing module, the data interpretation module, the power supply circuit, the reset circuit, the crystal oscillator circuit, the download circuit, and the configuration SPI Flash circuit are respectively connected to the data processing module and the RAM read / write module.

[0024] As a further preferred embodiment of the millimeter-wave radar radio frequency transmitter testing system of this utility model, the display module is a touch screen display module.

[0025] As a further preferred embodiment of the millimeter-wave radar radio frequency transmitter test system of this utility model, the memory module uses Micron's 4 Gbit capacity DDR3-SDRAM memory chip MT41J256M16HA-125 as the cache medium.

[0026] As a further preferred embodiment of the millimeter-wave radar RF transmitter test system of this utility model, the clock module includes a clock chip DS3231, a capacitor C4, resistors R25, R26, R27, and R28. The VCC terminal is connected to one end of resistor R25 and one end of resistor R26, respectively. The other end of resistor R25 is connected to the SDA terminal of the clock chip DS3231, and the other end of resistor R26 is connected to the SCL terminal of the clock chip DS3231. The VDD terminal is connected to one end of resistor R27, one end of resistor R28, one end of capacitor C4, and port 2 of the clock chip DS3231, respectively. The other end of resistor R27 is connected to port 1 of the clock chip DS3231, and the other end of resistor R28 is connected to port 3 of the clock chip DS3231. The other end of capacitor C4 is grounded.

[0027] As a further preferred embodiment of the millimeter-wave radar RF transmitter test system of this utility model, the crystal oscillator circuit includes a control chip 7N10.000MBP, a capacitor C45, resistors R22, R23, R24, a capacitor C69, and a voltage VCC terminal. The 8-pin interface of the control chip 7N10.000MBP is connected to one end of resistor R22. The other end of resistor R22 is connected to one end of capacitor C45, the 9-pin interface of the control chip 7N10.000MBP, one end of resistor R23, and the voltage VCC terminal. The other end of capacitor C45 is grounded. The other end of resistor R23 is connected to one end of resistor R24, and the other end of resistor R24 ​​is grounded. The 10-pin interface of the control chip 7N10.000MBP is connected to one end of capacitor C69, and the other end of capacitor C69 is grounded.

[0028] Compared with the prior art, the present invention, by adopting the above technical solution, has the following technical effects:

[0029] This utility model discloses a millimeter-wave radar RF transmitter testing system, comprising a signal generator, power amplifier, RF switching switch, RF transmitter, power meter, spectrum analyzer, controller module, and display module. Through an automated testing process, it significantly improves testing efficiency, reduces testing costs, simplifies operation, and ensures the accuracy of test results. The automated testing process significantly improves testing efficiency; the integrated design reduces the complexity and cost of testing equipment; the system has a user-friendly interface, making it easy for operators to use; and high-precision measurement equipment and controllers ensure the accuracy of test results. Attached Figure Description

[0030] The accompanying drawings, which are provided to further illustrate the present invention and form part of this application, do not constitute an undue limitation of the present invention. In the drawings:

[0031] Figure 1 This is a schematic diagram of the structural principle of a millimeter-wave radar radio frequency transmitter test system according to the present invention;

[0032] Figure 2 This is a circuit diagram of the radio frequency switching switch of this utility model;

[0033] Figure 3 This is a schematic diagram of the controller module of this utility model;

[0034] Figure 4 This is the circuit diagram of the clock module of this utility model;

[0035] Figure 5 This is the circuit diagram of the crystal oscillator circuit of this utility model. Detailed Implementation

[0036] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. The illustrative embodiments and descriptions are only used to explain the present invention and are not intended to limit the present invention.

[0037] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present utility model, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0038] A millimeter-wave radar RF transmitter test system, such as Figure 1 As shown, it includes a signal generator, power amplifier, RF switching switch, RF transmitter, power meter, spectrum analyzer, controller module, display module, memory module, clock module, interface module and power supply module;

[0039] The signal generator is connected to the radio frequency transmitter in sequence via a power amplifier and a radio frequency switching switch. The radio frequency transmitter is connected to the controller module via a power meter and a spectrum analyzer. The display module, memory module, clock module, interface module and power supply module are connected to the controller module.

[0040] As a further preferred embodiment of the millimeter-wave radar radio frequency transmitter test system of this utility model, a signal generator is used to generate test signals of specific frequency and power;

[0041] A power amplifier is used to amplify the power of a test signal to meet the input requirements of an RF transmitter.

[0042] RF switching switch is used to switch different test signals to the RF transmitter;

[0043] Radio frequency transmitter, used for the millimeter-wave radar radio frequency transmitter under test;

[0044] A power meter is used to measure the output power of an RF transmitter.

[0045] A spectrum analyzer is used to analyze the spectral characteristics of the output signal of a radio frequency transmitter.

[0046] The controller module is used to control the operation of the entire test system, including setting the frequency and power of the signal generator, switching the RF switch, and acquiring and analyzing data from the power meter and spectrum analyzer.

[0047] The display module is used to display test results and system status.

[0048] The power module is used to provide the required electrical energy.

[0049] A signal generator produces a test signal of a specific frequency and power, which is then amplified by a power amplifier to meet the input requirements of the radio frequency transmitter.

[0050] RF switching switch, which inputs test signals to the RF transmitter as needed;

[0051] The radio frequency transmitter converts the test signal into a millimeter-wave radio frequency signal and outputs it.

[0052] A power meter and a spectrum analyzer are used to measure the output power of the radio frequency transmitter and analyze its spectral characteristics, respectively.

[0053] The controller analyzes the measurement results to determine whether the performance of the RF transmitter meets the design requirements.

[0054] The display module shows the test results and system status in real time for operators' reference.

[0055] This invention significantly improves testing efficiency, reduces testing costs, simplifies operation procedures, and ensures the accuracy of test results through an automated testing process. The automated testing process significantly improves testing efficiency; the integrated design reduces the complexity and cost of testing equipment; the system has a user-friendly interface, making it easy for operators to use; and high-precision measuring equipment and controllers ensure the accuracy of test results.

[0056] like Figure 2 As shown, the radio frequency (RF) switching switch includes an RF terminal, a first NMOS transistor Q1, a second NMOS transistor Q2, a third NMOS transistor Q3, a fourth NMOS transistor Q4, a fifth NMOS transistor Q5, a sixth NMOS transistor Q6, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, an RF ANT terminal, a voltage VCTRL terminal, and a voltage VCTRI terminal.

[0057] The RF terminal is connected to one end of the fifth resistor R5, one end of the seventh resistor R7, the drain of the third NMOS transistor Q3, and the drain of the fourth NMOS transistor Q4. The other end of the fifth resistor R5 is connected to the source of the third NMOS transistor Q3, the drain of the second NMOS transistor Q2, and one end of the third resistor R3. The other end of the third resistor R3 is connected to the source of the second NMOS transistor Q2, the drain of the first NMOS transistor Q1, and one end of the first resistor R1. The other end of the first resistor R1 is connected to the source of the first NMOS transistor Q1 and grounded. The base of the first NMOS transistor Q1 is also connected to the first NMOS transistor Q1. The anode of the first diode is connected to the gate of the first NMOS transistor Q1, and one end of the second resistor R2 is connected to the gate of the first NMOS transistor Q1. The other end of the second resistor R2 is connected to one end of the fourth resistor R4 and the voltage VCTRI terminal. One end of the sixth resistor R6 is connected to the gate of the second NMOS transistor Q2 and the cathode of the second diode D2. The anode of the second diode D2 is connected to the base of the second NMOS transistor Q2. The other end of the sixth resistor R4 is connected to the gate of the third NMOS transistor Q3 and the cathode of the third diode D3. The anode of the third diode D3 is connected to the base of the third NMOS transistor Q3.

[0058] The gate of the fourth NMOS transistor Q4 is connected to the cathode of the fourth diode D4 and one end of the eighth resistor R8. The other end of the seventh resistor R7 is connected to the source of the fourth NMOS transistor Q4, the drain of the fifth NMOS transistor Q5, and one end of the ninth resistor R9. The gate of the fifth NMOS transistor Q5 is connected to one end of the tenth resistor R10 and the cathode of the fifth diode D5. The anode of the fifth diode D5 is connected to the base of the fifth diode D5. The source of the fifth NMOS transistor Q5 is connected to the other end of the ninth resistor R9, one end of the eleventh resistor R11, and the drain of the sixth NMOS transistor Q6. The gate of the sixth NMOS transistor Q6 is connected to one end of the twelfth resistor R12 and the cathode of the sixth diode D6. The anode of the sixth diode D6 is connected to the base of the sixth diode D6. The other end of the twelfth resistor R12 is connected to the other end of the eighth resistor R8. The other end of the tenth resistor R10 is connected to the voltage VCTRL terminal. The source of the sixth NMOS transistor Q6 is connected to the other end of the eleventh resistor R11 and the RF ANT terminal.

[0059] The RF switch section adopts a series-parallel structure, with the control signals of the two branches being complementary. When the series branch is on, it is equivalent to a small resistor; when the parallel branch is off, it is equivalent to a capacitor and a resistor in parallel, and vice versa.

[0060] In recent years, RF switch designs have largely adopted SiI CMOS technology, which, compared to GaAs technology, balances cost and performance. However, due to the limited voltage handling capability of individual transistors in the SiI CMOS process, RF switches using this technology often employ a stacked structure when processing high-power signals. This structure suffers from significant leakage current at the body and gate terminals, leading to uneven voltage swing distribution among the transistors in each stage of the stacked structure, severely limiting the overall voltage handling capability of the RF switch branch.

[0061] When the SOI MOS transistor is floating, the body potential charges and discharges due to the parasitic capacitance, causing the threshold voltage to drift. Therefore, each stage of the transistor adopts body region adaptive bias, and the body terminal and gate terminal are connected by a diode, which can greatly improve the circuit performance.

[0062] like Figure 3 As shown, the controller module includes a data acquisition and control module, a data processing module, a RAM read / write module, an interface chip control unit, a synchronous clock control module, a command frame decomposition module, a data interpretation module, as well as a power supply circuit, a reset circuit, a crystal oscillator circuit, a download circuit, and a configuration SPI Flash circuit. The data acquisition and control module, the interface chip control unit, the synchronous clock control module, the command frame decomposition module, the data interpretation module, the power supply circuit, the reset circuit, the crystal oscillator circuit, the download circuit, and the configuration SPI Flash circuit are respectively connected to the data processing module and the RAM read / write module.

[0063] The control core uses the Xilinx Spartan 6 series chip XC6SLX45. The sixth-generation Spartan 6 FPGA is based on the widely recognized low-power 45nm, 9-metal copper layer, dual-gate oxide process technology, providing advanced power management technology, 150,000 logic cells, hard-core DRAM memory, and various IPs. It is one of Xlinx's most widely used and technologically mature FPGA series. The FPGA main control module primarily handles camera configuration and video data acquisition, DDR3-SDRAM data storage and retrieval, and HDMI interface chip configuration and video data transmission. Its hardware circuitry also includes power supply circuitry, reset circuitry, crystal oscillator circuitry, download circuitry, and SPI Flash configuration circuitry.

[0064] To address the caching issue of high-speed, high-capacity video data, this system uses the Micron MT41J256M16HA-125 4 Gbit DDR3-SDRAM memory chip as the cache medium. A0-A14 are the address bus, B0-B3 are the Bank addresses; the FPGA controls the data storage location in the DDR3-SDRAM by controlling the address bus and Bank addresses. D0-D15 are the data bus, connected in parallel with the FPGA. CLK-N and CLK-P are differential clock input ports; the clock frequency in this system is set to 312.5 MHz. The FPGA controls the read and write operations of the DDR3-SDRAM using the Column Address Select (CAS), Row Address Select (RAS), and Write Enable (WE) signals. Performance optimization is achieved by controlling the ODT to enable on-chip resistors and prevent data line interruption reflections. DQS is the synchronization signal between the DDR3-SDRAM and the controller; it is bidirectional, issued by the controller when writing data and by the memory when reading data. DM is the data mask signal. Since only Bank1 and Bank3 of the Spartan6 series FPGA have MCB hard cores, in this system, Bank3 of the FPGA is connected to DDR3-SDRAM with a port voltage standard of 1.5 V. In the FPGA UCF, the IO standard needs to be set to SSTL15_II.

[0065] The display module is a touchscreen display module. The memory module uses Micron's 4 Gbit DDR3-SDRAM memory chip MT41J256M16HA-125 as the cache medium.

[0066] like Figure 4 As shown, the clock module includes a clock chip DS3231, a capacitor C4, resistors R25, R26, R27, and R28. The VCC terminal is connected to one end of resistor R25 and one end of resistor R26. The other end of resistor R25 is connected to the SDA terminal of the clock chip DS3231, and the other end of resistor R26 is connected to the SCL terminal of the clock chip DS3231. The VDD terminal is connected to one end of resistor R27, one end of resistor R28, one end of capacitor C4, and port 2 of the clock chip DS3231. The other end of resistor R27 is connected to port 1 of the clock chip DS3231, and the other end of resistor R28 is connected to port 3 of the clock chip DS3231. The other end of capacitor C4 is grounded.

[0067] The clock circuit is designed and implemented using the low-cost, high-precision real-time clock chip DS3231. The DS3231's register addresses are 00h to 12h. It obtains clock and Hitachi information by reading appropriate register bytes and obtains clock and calendar information by writing appropriate register bytes. It also sets or initializes clock and calendar data by writing appropriate register bytes.

[0068] like Figure 5 As shown, the crystal oscillator circuit includes a control chip 7N10.000MBP, a capacitor C45, resistors R22, R23, and R24, a capacitor C69, and a voltage VCC terminal. The 8-pin connector of the control chip 7N10.000MBP is connected to one end of resistor R22. The other end of resistor R22 is connected to one end of capacitor C45, the 9-pin connector of the control chip 7N10.000MBP, one end of resistor R23, and the voltage VCC terminal. The other end of capacitor C45 is grounded. The other end of resistor R23 is connected to one end of resistor R24, and the other end of resistor R24 ​​is grounded. The 10-pin connector of the control chip 7N10.000MBP is connected to one end of capacitor C69, and the other end of capacitor C69 is grounded.

[0069] The above description is only a preferred embodiment of the present utility model. Therefore, all equivalent changes or modifications made to the structure, features and principles described in the claims of the present utility model patent application are included in the scope of the present utility model patent application.

[0070] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless defined as herein.

[0071] The above embodiments are merely illustrative of the technical concept of this utility model and should not be construed as limiting the scope of protection of this utility model. Any modifications made to the technical solution based on the technical concept proposed in this utility model shall fall within the scope of protection of this utility model. The implementation methods of this utility model have been described in detail above, but this utility model is not limited to the above-described implementation methods. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of this utility model.

Claims

1. A millimeter-wave radar radio frequency transmitter testing system, characterized in that: It includes a signal generator, power amplifier, RF switching switch, RF transmitter, power meter, spectrum analyzer, controller module, display module, memory module, clock module, interface module and power supply module; The signal generator is connected to the radio frequency transmitter in sequence via a power amplifier and a radio frequency switching switch. The radio frequency transmitter is connected to the controller module via a power meter and a spectrum analyzer. The display module, memory module, clock module, interface module and power supply module are connected to the controller module.

2. The millimeter-wave radar RF transmitter test system according to claim 1, characterized in that: A signal generator is used to generate test signals of a specific frequency and power. A power amplifier is used to amplify the power of a test signal to meet the input requirements of an RF transmitter. RF switching switch is used to switch different test signals to the RF transmitter; Radio frequency transmitter, used for the millimeter-wave radar radio frequency transmitter under test; A power meter is used to measure the output power of an RF transmitter. A spectrum analyzer is used to analyze the spectral characteristics of the output signal of a radio frequency transmitter. The controller module is used to control the operation of the entire test system, including setting the frequency and power of the signal generator, switching the RF switch, and acquiring and analyzing data from the power meter and spectrum analyzer. The display module is used to display test results and system status. The power module is used to provide the required electrical energy.

3. The millimeter-wave radar RF transmitter test system according to claim 2, characterized in that: The radio frequency (RF) switching switch includes an RF terminal, a first NMOS transistor Q1, a second NMOS transistor Q2, a third NMOS transistor Q3, a fourth NMOS transistor Q4, a fifth NMOS transistor Q5, a sixth NMOS transistor Q6, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, an RF ANT terminal, and a voltage V. CTRL Terminal and voltage V CTRI end, The RF terminal is connected to one end of the fifth resistor R5, one end of the seventh resistor R7, the drain of the third NMOS transistor Q3, and the drain of the fourth NMOS transistor Q4. The other end of the fifth resistor R5 is connected to the source of the third NMOS transistor Q3, the drain of the second NMOS transistor Q2, and one end of the third resistor R3. The other end of the third resistor R3 is connected to the source of the second NMOS transistor Q2, the drain of the first NMOS transistor Q1, and one end of the first resistor R1. The other end of the first resistor R1 is connected to the source of the first NMOS transistor Q1 and grounded. The base of the first NMOS transistor Q1 is connected to the anode of the first diode. The cathode of the first diode is connected to the gate of the first NMOS transistor Q1 and one end of the second resistor R2. The other end of the second resistor R2 is connected to one end of the fourth resistor R4 and the voltage V. CTRI One end of the sixth resistor R6 and the other end of the fourth resistor R4 are respectively connected to the gate of the second NMOS transistor Q2 and the cathode of the second diode D2. The anode of the second diode D2 is connected to the base of the second NMOS transistor Q2. The other end of the sixth resistor R4 is respectively connected to the gate of the third NMOS transistor Q3 and the cathode of the third diode D3. The anode of the third diode D3 is connected to the base of the third NMOS transistor Q3. The gate of the fourth NMOS transistor Q4 is connected to the cathode of the fourth diode D4 and one end of the eighth resistor R8. The other end of the seventh resistor R7 is connected to the source of the fourth NMOS transistor Q4, the drain of the fifth NMOS transistor Q5, and one end of the ninth resistor R9. The gate of the fifth NMOS transistor Q5 is connected to one end of the tenth resistor R10 and the cathode of the fifth diode D5. The anode of the fifth diode D5 is connected to the base of the fifth diode D5. The source of the fifth NMOS transistor Q5 is connected to the other end of the ninth resistor R9, one end of the eleventh resistor R11, and the drain of the sixth NMOS transistor Q6. The gate of the sixth NMOS transistor Q6 is connected to one end of the twelfth resistor R12 and the cathode of the sixth diode D6. The anode of the sixth diode D6 is connected to the base of the sixth diode D6. The other end of the twelfth resistor R12 is connected to the other end of the eighth resistor R8. The other end of the tenth resistor R10 is connected to voltage V. CTRL The source of the sixth NMOS transistor Q6 is connected to the other end of the eleventh resistor R11 and the RF ANT terminal, respectively.

4. The millimeter-wave radar radio frequency transmitter test system according to claim 2, characterized in that: The controller module includes a data acquisition and control module, a data processing module, a RAM read / write module, an interface chip control unit, a synchronous clock control module, a command frame decomposition module, a data interpretation module, as well as a power supply circuit, a reset circuit, a crystal oscillator circuit, a download circuit, and a configuration SPI Flash circuit. The data acquisition and control module, the interface chip control unit, the synchronous clock control module, the command frame decomposition module, the data interpretation module, the power supply circuit, the reset circuit, the crystal oscillator circuit, the download circuit, and the configuration SPI Flash circuit are respectively connected to the data processing module and the RAM read / write module.

5. The millimeter-wave radar radio frequency transmitter test system according to claim 2, characterized in that: The The display module is a touch screen display module.

6. The millimeter-wave radar radio frequency transmitter test system according to claim 2, characterized in that: The memory module uses Micron's 4 Gbit DDR3-SDRAM memory chip MT41J256M16HA-125 as the cache medium.

7. The millimeter-wave radar radio frequency transmitter test system according to claim 2, characterized in that: The clock module includes a clock chip DS3231, a capacitor C4, resistors R25, R26, R27, and R28. The VCC terminal is connected to one end of resistor R25 and one end of resistor R26. The other end of resistor R25 is connected to the SDA terminal of the clock chip DS3231. The other end of resistor R26 is connected to the SCL terminal of the clock chip DS3231. The VDD terminal is connected to one end of resistor R27, one end of resistor R28, one end of capacitor C4, and port 2 of the clock chip DS3231. The other end of resistor R27 is connected to port 1 of the clock chip DS3231. The other end of resistor R28 is connected to port 3 of the clock chip DS3231. The other end of capacitor C4 is grounded.

8. The millimeter-wave radar radio frequency transmitter test system according to claim 4, characterized in that: The crystal oscillator circuit includes a control chip 7N10.000MBP, a capacitor C45, resistors R22, R23, and R24, a capacitor C69, and a voltage VCC terminal. The 8-pin connector of the control chip 7N10.000MBP is connected to one end of resistor R22. The other end of resistor R22 is connected to one end of capacitor C45, the 9-pin connector of the control chip 7N10.000MBP, one end of resistor R23, and the voltage VCC terminal. The other end of capacitor C45 is grounded. The other end of resistor R23 is connected to one end of resistor R24, and the other end of resistor R24 ​​is grounded. The 10-pin connector of the control chip 7N10.000MBP is connected to one end of capacitor C69, and the other end of capacitor C69 is grounded.

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