Light emitting diode chip and electronic device

Abstract

The application provides a light-emitting diode chip and an electronic device, and relates to the technical field of semiconductor light emission. The light-emitting diode chip comprises: a flip light-emitting diode; and a reflective layer on a light-emitting surface of the flip light-emitting diode, wherein the reflective layer comprises a plurality of light-transmitting openings, and a surface on a side of the reflective layer facing the flip light-emitting diode and an inner wall surface of the light-transmitting openings are reflective surfaces. The reflective layer can reflect light into the flip light-emitting diode, and the light is emitted through the light-transmitting openings after propagating in the flip light-emitting diode, thereby avoiding light loss and ensuring high light-emitting brightness of the light-emitting diode chip. The inner wall surface of the light-transmitting openings can reflect light and emit the light to the outside, and the emission angle of the light can be optimized and adjusted in the reflection process, thereby increasing the light-emitting angle of the light-emitting diode chip. When the light-emitting diode chip is prepared as a red light-emitting diode chip, the light-emitting angle consistency of red, blue and green light-emitting diode chips corresponding to three primary colors can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor light-emitting technology, and more specifically, to a light-emitting diode chip and an electronic device. Background Technology

[0002] Mini LED (Light Emitting Diode) devices, as a new type of display device, have broad application prospects and huge market value in consumer electronics products such as televisions, monitors, tablets, and indoor and outdoor LED screens due to their low power consumption, high resolution, high contrast, and high reliability. Furthermore, Mini-LED display technology also boasts advantages such as wide color gamut, high brightness, and high saturation. It has also become a research hotspot in the global LED field in recent years. In display applications, Mini LEDs are mainly used as red, blue, and green primary color light-emitting devices, and these three primary color light-emitting devices are combined to form a full-color display. However, because the materials of the red light-emitting diode chips are different from those of the blue / green light-emitting diode chips, and due to the limitations of the epitaxial material of the red light-emitting diode chips, the emission angle of the red light-emitting diode chips is smaller than that of the blue / green light-emitting diode chips. This results in poor consistency in the emission angle of the three primary color light-emitting devices, ultimately leading to poor visual effects in the fabricated display devices. Utility Model Content

[0003] In view of this, this application provides a light-emitting diode chip and an electronic device, which effectively solves the technical problems existing in the prior art, increases the light-emitting angle of the light-emitting diode chip, and when it is made into a red light-emitting diode chip, it can improve the consistency of the light-emitting angle of the corresponding light-emitting diode chips of red / blue / green primary colors, thereby improving the visual effect of the display device.

[0004] To achieve the above objectives, the technical solution provided in this application is as follows:

[0005] A light-emitting diode chip, comprising:

[0006] Flip-chip LED;

[0007] A reflective layer is located on the light-emitting surface of the flip-chip LED. The reflective layer includes a plurality of light-transmitting openings, wherein the surface of the reflective layer facing the flip-chip LED and the inner wall surface of the light-transmitting openings are reflective surfaces.

[0008] Optionally, the light-emitting diode chip further includes:

[0009] The dielectric layer located between the light-emitting surface and the reflective layer.

[0010] Optionally, the dielectric layer includes a cutout corresponding to the light-transmitting opening.

[0011] Optionally, the flip-chip light-emitting diode includes a substrate, and the surface of the substrate facing the reflective layer is the light-emitting surface;

[0012] The refractive index of the dielectric layer is different from that of the substrate.

[0013] Optionally, the dielectric layer includes at least one of MgF2 and SiO2.

[0014] Optionally, the inner wall surface of the light-transmitting opening is curved.

[0015] Optionally, the reflective layer includes at least one metal reflector.

[0016] Optionally, the flip-chip light-emitting diode includes:

[0017] A substrate, a bonding layer, and a P-type window layer are stacked sequentially. The surface of the P-type window layer facing away from the substrate is divided into a first region and a second region. The surface of the substrate facing away from the bonding layer is the light-emitting surface.

[0018] The light-emitting epitaxial layer located on the first region, in the direction from the substrate to the P-type window layer, comprises a P-type confinement layer, an active layer, and an N-type confinement layer stacked sequentially.

[0019] A DBR (Distributed Bragg Reflector) passivation layer is located on the side of the P-type window layer away from the substrate and covers at least part of the exposed surface of the P-type window layer and the light-emitting epitaxial layer. The DBR passivation layer includes a first cutout corresponding to at least part of the N-type confinement layer and a second cutout corresponding to at least part of the second region.

[0020] An N-type electrode located in the first cutout and electrically connected to the N-type confinement layer, and a P-type electrode located in the second cutout and electrically connected to the P-type window layer.

[0021] Optionally, the surface of the P-type window layer facing the bonding layer is roughened;

[0022] And / or, the flip-chip light-emitting diode further includes: a P-type ohmic contact layer located between the P-type window layer and the P-type confinement layer;

[0023] And / or, the light-emitting epitaxial layer further includes: an N-type current spreading layer located on the side of the N-type confinement layer opposite to the active layer.

[0024] Based on the same inventive concept, this application also provides an electronic device, which includes the above-described light-emitting diode chip.

[0025] Optionally, the electronic device includes a display device.

[0026] Compared with existing technologies, the technical solution provided in this application has at least the following advantages:

[0027] This application provides a light-emitting diode (LED) chip and an electronic device. The LED chip includes: a flip-chip LED; and a reflective layer located on the light-emitting surface of the flip-chip LED. The reflective layer includes multiple light-transmitting openings, wherein the surface of the reflective layer facing the flip-chip LED and the inner wall surface of the light-transmitting openings are reflective surfaces. The reflective layer can reflect light into the flip-chip LED, which then propagates through the interior of the flip-chip LED and exits through the light-transmitting openings, avoiding light loss and ensuring high brightness of the LED chip. Simultaneously, the inner wall surface of the light-transmitting openings can reflect light before it exits to the outside, optimizing the light emission angle during reflection, thereby increasing the emission angle of the LED chip. Based on this, when the LED chip provided in this application is fabricated as a red LED chip, the consistency of the emission angle of the corresponding red / blue / green LED chips can be improved, thereby enhancing the visual effect of the display device. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0029] Figure 1 This application provides a structural stack-up diagram of a light-emitting diode chip according to an embodiment of the present application;

[0030] Figure 2 This is a structural stack-up diagram of another light-emitting diode chip provided in an embodiment of this application;

[0031] Figure 3 This is a structural stack-up diagram of another light-emitting diode chip provided in an embodiment of this application;

[0032] Figure 4 This is a structural stack-up diagram of another light-emitting diode chip provided in an embodiment of this application;

[0033] Figure 5 This is a structural stack-up diagram of another light-emitting diode chip provided in an embodiment of this application;

[0034] Figure 6 This is a structural stack-up diagram of another light-emitting diode chip provided in an embodiment of this application;

[0035] Figure 7 This is a structural stack-up diagram of another light-emitting diode chip provided in an embodiment of this application.

[0036] Figure label:

[0037] 100 - Flip LED; 110 - Substrate; 120 - Bonding layer; 130 - P-type window layer; 140 - Emitting epitaxial layer; 141 - P-type confinement layer; 142 - Active layer; 143 - N-type confinement layer; 144 - N-type current spreading layer; 150 - DBR passivation layer; 161 - N-type electrode; 162 - P-type electrode; 170 - P-type ohmic contact layer; 200 - Reflective layer; 210 - Light-transmitting aperture; 300 - Dielectric layer; S1 - Light-emitting surface. Detailed Implementation

[0038] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0039] As described in the background section, Mini LED (Light Emitting Diode) devices, as a new type of display device, have broad application prospects and huge market value in consumer electronics products such as televisions, monitors, tablets, and indoor and outdoor LED screens due to their low power consumption, high resolution, high contrast, and high reliability. Furthermore, Mini-LED display technology also boasts advantages such as wide color gamut, high brightness, and high saturation. It has also become a research hotspot in the global LED field in recent years. In display applications, Mini LEDs are mainly used as red, blue, and green primary color light-emitting devices, which are then combined to form a full-color display. However, because the materials of red LED chips differ from those of blue / green LED chips, and due to limitations imposed by the epitaxial material of red LED chips, the emission angle of red LED chips is smaller than that of blue / green LED chips. This results in poor consistency in the emission angles of the three primary color light-emitting devices, ultimately leading to poor visual effects in the fabricated display device. For example, the emission angle of existing red LED chips is only 120°, while the emission angle of blue / green LED chips can reach 140°.

[0040] Based on this, embodiments of this application provide a light-emitting diode (LED) chip and an electronic device. The LED chip includes: a flip-chip LED; and a reflective layer located on the light-emitting surface of the flip-chip LED. The reflective layer includes multiple light-transmitting openings, wherein the surface of the reflective layer facing the flip-chip LED and the inner wall surface of the light-transmitting openings are reflective surfaces. The LED chip provided in this application effectively solves the technical problems existing in the prior art, increases the emission angle of the LED chip, and when fabricated as a red LED chip, improves the consistency of the emission angles of the corresponding red / blue / green primary color LED chips, thereby improving the visual effect of the display device.

[0041] To achieve the above objectives, the technical solutions provided in this application are as follows, in specific combination with... Figures 1 to 7 The technical solutions provided in the embodiments of this application will be described in detail.

[0042] refer to Figure 1 The diagram shows a structural stack of a light-emitting diode (LED) chip according to an embodiment of this application. The LED chip includes a flip-chip LED 100 and a reflective layer 200 located on the light-emitting surface S1 of the flip-chip LED 100. The reflective layer 200 includes multiple light-transmitting openings 210, wherein the surface of the reflective layer 200 facing the flip-chip LED 100 and the inner wall surface of the light-transmitting openings 210 are reflective surfaces. The technical solution provided by this application embodiment allows the reflective layer 200 to reflect light into the flip-chip LED 100, which then propagates through the interior of the flip-chip LED 100 and exits through the light-transmitting openings 210, avoiding light loss and ensuring high brightness of the LED chip. Simultaneously, the inner wall surface of the light-transmitting openings 210 can reflect light before it exits to the outside, optimizing the light emission angle during reflection (e.g., ...). Figure 1 The arrow indicates the direction of light propagation, which increases the emission angle of the LED chip. Therefore, when the LED chip provided in this embodiment is fabricated as a red LED chip, the emission angle consistency of the corresponding red / blue / green LED chips can be improved, thereby enhancing the visual effect of the display device.

[0043] like Figure 2The diagram shows a structural stack-up of another light-emitting diode (LED) chip provided in this embodiment. The flip-chip LED 100 provided in this embodiment includes: a substrate 110, a bonding layer 120, and a P-type window layer 130 stacked sequentially. The surface of the P-type window layer facing away from the substrate is divided into a first region and a second region. The surface of the substrate 110 facing away from the bonding layer is the light-emitting surface S1. A light-emitting epitaxial layer 140 located in the first region, in the direction from the substrate 110 to the P-type window layer 130, includes a P-type confinement layer 141, an active layer 142, and an N-type confinement layer 143 stacked sequentially. A DBR passivation layer 150 is located on the side of the P-type window layer 130 facing away from the substrate 110 and covers at least a portion of the exposed surfaces of the P-type window layer 130 and the light-emitting epitaxial layer 140. The DBR passivation layer 150 includes a first cutout corresponding to at least a portion of the N-type confinement layer 143 and a second cutout corresponding to at least a portion of the second region. An N-type electrode 161 is located in the first cutout and electrically connected to the N-type confinement layer 143, and a P-type electrode 162 is located in the second cutout and electrically connected to the P-type window layer 130. The first cutout is provided corresponding to at least a portion of the N-type confinement layer 143 and may expose at least a portion of the N-type confinement layer 143, or it may expose at least a portion of the functional stacked layer located on the side of the N-type confinement layer 143 facing away from the substrate 110. Similarly, the second cutout corresponds to at least a portion of the second region. It can be that the second cutout exposes at least a portion of the second region, or it can be that the second cutout exposes at least a portion of the functional stacked layer located on the side of the second region away from the substrate 110.

[0044] To improve the performance of LED chips, the stacked structure of the LED chips can be optimized. For example, the surface of the P-type window layer 130 facing the bonding layer 120, as provided in the embodiments of this application, is roughened; and / or, the flip-chip LED 100 further includes: a P-type ohmic contact layer 170 located between the P-type window layer 130 and the P-type confinement layer 141; and / or, the light-emitting epitaxial layer 140 further includes: an N-type current spreading layer 144 located on the side of the N-type confinement layer 143 facing away from the active layer 142. Specifically, as... Figure 3 The diagram shown illustrates a structural stack of another light-emitting diode (LED) chip according to an embodiment of this application. In this embodiment, the surface of the P-type window layer 130 facing the bonding layer 120 is roughened, increasing the surface roughness of the P-type window layer 130 towards the bonding layer 120. This reduces the specular reflectivity of the surface, improves light scattering and diffuse reflection, thereby increasing the emission efficiency of the flip-chip LED 100. Alternatively, as shown... Figure 4The diagram shown illustrates a structural stack of another light-emitting diode (LED) chip provided in this application embodiment. The flip-chip LED 100 provided in this application embodiment further includes a P-type ohmic contact layer 170 located between the P-type window layer 130 and the P-type confinement layer 141. The P-type ohmic contact layer 170 extends to the P-type electrode 162, which is connected to the P-type window layer 130 via the P-type ohmic contact layer 170, thereby reducing the contact resistance between the P-type electrode 162 and the P-type window layer 130 and improving the performance of the LED chip. Alternatively, as shown... Figure 5 The diagram shown is a structural stack-up of another light-emitting diode chip provided in this application embodiment. The light-emitting epitaxial layer 140 provided in this application embodiment further includes an N-type current spreading layer 144 located on the side of the N-type confinement layer 143 away from the active layer 142, in order to reduce the lateral resistance, promote the uniform diffusion of current in the N-type confinement layer 143, and improve the reliability of the light-emitting diode chip. At this time, the N-type electrode 161 is located on the side of the N-type current spreading layer 144 away from the N-type confinement layer 143.

[0045] It should be noted that the LED chip provided in this application is not limited to the above-described in-chip stacked layer optimization method; other functional stacked layers can also be added, and this application does not impose specific limitations in this regard. Furthermore, for the stacked layer optimization of the LED chip, optimization of a single stacked layer can be performed, such as... Figure 3 The surface roughening of the P-type window layer 130 is illustrated in the diagram. Figure 4 The diagram illustrates the addition of a P-type ohmic contact layer 170, and Figure 5 The diagram illustrates the added N-type current extension layer 144. Alternatively, at least two optimized combinations of stacked layers can be implemented, such as a light-emitting diode chip including both the roughened surface of the P-type window layer 130 and the P-type ohmic contact layer 170; or a light-emitting diode chip including both the roughened surface of the P-type window layer 130 and the N-type current extension layer 144; or a light-emitting diode chip including both the P-type ohmic contact layer 170 and the N-type current extension layer 144; or a light-emitting diode chip simultaneously including the roughened surface of the P-type window layer 130, the P-type ohmic contact layer 170, and the N-type current extension layer 144, as shown in the diagram. Figure 6 The diagram shows the stacked structure of a light-emitting diode chip.

[0046] Based on the aforementioned light-emitting diode (LED) chip, the reflective layer 200 can be further optimized in this embodiment. In some embodiments, the reflective layer 200 provided in this embodiment includes at least one metal mirror. Selecting a metal material for the reflective layer 200 not only improves its reflectivity, ensuring high brightness of the LED chip, but also allows for heat dissipation of the flip-chip LED 100 through the metal material, thereby improving the heat dissipation effect and reliability of the LED chip. Optionally, the reflective layer 200 provided in this embodiment may include one metal mirror, wherein the material of the metal mirror may include one of Au, Ag, and Al. Furthermore, the reflective layer 200 provided in this embodiment may also include at least two metal mirrors, which are stacked in the direction from the substrate 110 to the P-type window layer 130. The materials of the different metal mirrors may be the same or different to achieve better results; the at least two metal mirrors may include a combination of Au, Ag, and Al. For example, taking a reflective layer 200 that includes two metal mirrors, the metal mirror closer to the flip-chip 100 can be made of Ag, while the metal mirror farther from the flip-chip 100 can be made of Al. Ag has good reflectivity, and setting the material of the metal mirror closer to the flip-chip 100 as Ag can improve the reflectivity of the reflective layer 200. Al has low cost and good heat dissipation. Therefore, stacking an Al mirror on top of the Ag mirror not only improves the reflectivity of the reflective layer 200, but also improves the heat dissipation of the reflective layer 200 while keeping the cost of the reflective layer 200 low.

[0047] In some embodiments, the inner wall surface of the light-transmitting aperture 210 provided in this application is curved to adapt to the propagation path of the light emitted by the flip-chip LED 100, further optimizing the light emission angle and thereby improving the light emission angle of the LED chip. The inner wall surface of the light-transmitting aperture 210 can be a regular curved surface such as a hyperboloid, or other irregular curved surfaces; this application does not impose specific limitations on this. Optionally, the inner wall surface of the light-transmitting aperture 210 provided in this application can be a hyperboloid paraboloid, etc. It should be noted that this application does not impose specific limitations on the number and arrangement of the light-transmitting apertures 210 in the reflective layer 200. Considering optical performance and process limitations, the design requirements for the light-transmitting apertures 210 should pay attention to the following conditions: 1) Avoid unnecessary diffraction, specifically by suppressing higher-order diffraction through subwavelength characteristics or aperiodic arrangement; 2) Balance transmission and reflection, specifically by adjusting the aperture density and shape according to the device function; 3) Process compatibility, thereby ensuring that the design pattern of the light-transmitting aperture 210 can be mass-produced.

[0048] like Figure 7 The diagram shown illustrates a structural stack of another light-emitting diode (LED) chip provided in this embodiment. The LED chip further includes a dielectric layer 300 located between the light-emitting surface S1 and the reflective layer 200. The dielectric layer 300 can suppress the problem of atoms from the reflective layer 200 penetrating into the flip-chip LED 100 due to high-temperature processes or other factors during the LED chip's fabrication process and subsequent long-term use, or the problem of chemical reactions between the reflective layer 200 and the flip-chip LED 100, thus ensuring high reliability of the LED chip. Specifically, when the flip-chip light-emitting diode 100 includes a substrate 110 and the reflective layer 200 includes a metal mirror, the side of the substrate 110 facing away from the P-type window layer 130 is the light-emitting surface. A dielectric layer 300 is disposed between the substrate 110 and the reflective layer 200. The dielectric layer 300 can suppress the penetration of atoms from the metal mirror into the substrate 110, and it can also suppress the reaction between the metal mirror and the substrate 110, thereby ensuring high reliability of the light-emitting diode chip. Continuing... Figure 7 As shown, the dielectric layer 300 provided in this embodiment includes a cutout corresponding to the light-transmitting opening 210, thereby preventing the dielectric layer 300 from blocking the light emitted from the flip-chip LED 100 through the light-transmitting opening 210 and ensuring high brightness of the LED chip. In other embodiments of this application, the dielectric layer 300 provided in this embodiment can also be a full-surface structure layer, which can also play the role of suppressing the related problems mentioned above. The specific structural form of the dielectric layer 300 needs to be designed according to the actual application. Optionally, the dielectric layer 300 provided in this embodiment includes at least one of MgF2 and SiO2.

[0049] Continue as Figure 7As shown in the embodiment of this application, the flip-chip light-emitting diode 100 includes a substrate 110, and the surface of the substrate 110 facing the reflective layer 200 is the light-emitting surface S1; the refractive index of the dielectric layer 300 is different from that of the substrate 110. Based on the design of the reflective layer 200 to increase the light-emitting angle of the LED chip, the matching of the refractive indices of the dielectric layer 300 and the substrate 110, based on the principle of multilayer interference, causes refraction and reflection at the interface, changing the direction of light propagation, thereby flexibly adjusting the light-emitting angle of the LED chip. For example, the refractive index of the dielectric layer 300 provided in this embodiment can be less than the refractive index of the substrate 110, thereby increasing the critical angle of total internal reflection, making it easier for the light emitted by the flip-chip LED 100 to be emitted at a large angle, achieving the purpose of widening the light-emitting angle of the LED chip. Alternatively, the refractive index of the dielectric layer 300 provided in this embodiment can be greater than that of the substrate 110, thereby enhancing the light extraction efficiency and making the light emission of the flip-chip LED 100 more concentrated in the normal direction, thus achieving the purpose of finely adjusting the light emission angle of the LED chip and realizing the effect of flexibly adjusting the light emission angle of the LED chip.

[0050] based on Figure 7 The schematic diagram of the stacked structure of the light-emitting diode chip illustrates the fabrication method of the light-emitting diode chip provided in this application embodiment, so as to facilitate a clearer understanding of the technical solution provided in this application. First, an MOCVD (Metal-organic Chemical Vapor Deposition) device can be used to sequentially deposit the following layers on a GaAs temporary substrate: a GaAs buffer layer, an etching stop layer, an N-type current extension layer 144, an N-type confinement layer 143, an active layer 142, a P-type confinement layer 141, a P-type ohmic contact layer 170, and a P-type window layer 130. The active layer 142 can be an MQW quantum well active layer, and the P-type window layer 130 can be a P-type GaP window layer. The doping concentration of the P-type GaP window layer can be 1-2E18cm⁻¹. −3This application does not impose specific limitations on this. The prepared semi-finished structure can then be cleaned, for example using acetone, isoacetone, or deionized water. After cleaning, a roughening solution is used to roughen the surface of the P-type window layer 130 away from the active layer 142, forming a roughened surface. Then, a bonding layer 120 is deposited on the roughened surface of the P-type window layer 130. The bonding layer 120 can be an oxide bonding layer, such as SiO2, which has better adhesion to the P-type GaP window layer. Then, the bonding layer 120 and the substrate 110 are activated with a solution, and the P-type window layer 130 and the substrate 110 are bonded together through the bonding layer 120. The substrate 110 can be a sapphire substrate. The GaAs temporary substrate, GaAs buffer layer, and etching stop layer are removed, and the mesa is etched from the N-type current extension layer 144 side to expose the P-type ohmic contact layer 170. A P-type electrode 162 is formed on the P-type ohmic contact layer 170, and an N-type electrode 161 is formed on the N-type current spreading layer 144. A passivation layer is deposited using PECVD (Plasma Enhanced Chemical Vapor Deposition) to form a DBR passivation layer 150, and then relevant parameter tests are performed. The relevant methods before the preparation of the dielectric layer 300 and the reflective layer 200 are the same as those in existing technologies, so they will not be described in detail. Next, the dielectric layer 300 and the reflective layer 200 are prepared. First, the dielectric layer 300 is formed on the surface of the substrate 110 away from the P-type window layer 130, and the reflective layer 200 is formed on the surface of the dielectric layer 300 away from the P-type window layer 130. The light-transmitting opening 210 in the reflective layer 200 is formed, and the corresponding light-transmitting opening 210 in the dielectric layer 300 is cut out. Then, the processes of hidden cutting, dicing, COT (Chip On Test), AOI (Automated Optical Inspection), sorting, visual inspection, and visual inspection film flipping and warehousing are carried out to finally obtain the light-emitting diode chip.

[0051] Based on the same inventive concept, embodiments of this application also provide an electronic device, which includes the light-emitting diode (LED) chip provided in any of the above embodiments. Optionally, the electronic device provided in embodiments of this application may include a display device, such as an electronic device that includes a display device, and the display device includes the LED chip provided in any of the above embodiments. The LED chip may be a red LED chip, thereby improving the uniformity of the emission angle of the corresponding red / blue / green LED chips, and thus improving the visual effect of the corresponding display device. In some embodiments, the electronic device provided in embodiments of this application may also be of other types, and this application does not impose specific limitations on this.

[0052] In summary, this application provides a light-emitting diode (LED) chip and an electronic device. The LED chip includes a flip-chip LED and a reflective layer located on the light-emitting surface of the flip-chip LED. The reflective layer includes multiple light-transmitting openings, wherein the surface of the reflective layer facing the flip-chip LED and the inner wall surface of the light-transmitting openings are reflective surfaces. The reflective layer can reflect light into the flip-chip LED, which then propagates through the inside of the flip-chip LED and exits through the light-transmitting openings, avoiding light loss and ensuring high brightness of the LED chip. Simultaneously, the inner wall surface of the light-transmitting openings can reflect light before it exits to the outside, optimizing the light emission angle during reflection and thus increasing the emission angle of the LED chip. Based on this, when the LED chip provided in this application is fabricated as a red LED chip, the consistency of the emission angle of the corresponding red / blue / green LED chips can be improved, thereby enhancing the visual effect of the display device.

[0053] In the description of the embodiments of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and other terms indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0054] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of embodiments of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0055] In the embodiments of this application, unless otherwise explicitly specified and limited, terms such as "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0056] In the embodiments of this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0057] In the embodiments of this application, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Furthermore, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0058] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A light-emitting diode chip, characterized in that, include: Flip-chip LED; A reflective layer is located on the light-emitting surface of the flip-chip LED. The reflective layer includes a plurality of light-transmitting openings, wherein the surface of the reflective layer facing the flip-chip LED and the inner wall surface of the light-transmitting openings are reflective surfaces.

2. The light-emitting diode chip according to claim 1, characterized in that, The light-emitting diode chip also includes: The dielectric layer located between the light-emitting surface and the reflective layer.

3. The light-emitting diode chip according to claim 2, characterized in that, The dielectric layer includes cutouts corresponding to the light-transmitting openings.

4. The light-emitting diode chip according to claim 2, characterized in that, The flip-chip light-emitting diode includes a substrate, and the surface of the substrate facing the reflective layer is the light-emitting surface; The refractive index of the dielectric layer is different from that of the substrate.

5. The light-emitting diode chip according to claim 2, characterized in that, The dielectric layer includes at least one of MgF2 and SiO2.

6. The light-emitting diode chip according to claim 1, characterized in that, The inner wall surface of the light-transmitting opening is curved.

7. The light-emitting diode chip according to claim 1, characterized in that, The reflective layer includes at least one layer of metal reflectors.

8. The light-emitting diode chip according to claim 1, characterized in that, The flip-chip light-emitting diode includes: A substrate, a bonding layer, and a P-type window layer are stacked sequentially. The surface of the P-type window layer facing away from the substrate is divided into a first region and a second region. The surface of the substrate facing away from the bonding layer is the light-emitting surface. The light-emitting epitaxial layer located on the first region, in the direction from the substrate to the P-type window layer, comprises a P-type confinement layer, an active layer, and an N-type confinement layer stacked sequentially. A DBR passivation layer located on the side of the P-type window layer away from the substrate and covering at least part of the exposed surface of the P-type window layer and the light-emitting epitaxial layer, the DBR passivation layer including a first cutout corresponding to at least part of the N-type confinement layer and a second cutout corresponding to at least part of the second region; An N-type electrode located in the first cutout and electrically connected to the N-type confinement layer, and a P-type electrode located in the second cutout and electrically connected to the P-type window layer.

9. The light-emitting diode chip according to claim 8, characterized in that, The surface of the P-type window layer facing the bonding layer is roughened. And / or, the flip-chip light-emitting diode further includes: a P-type ohmic contact layer located between the P-type window layer and the P-type confinement layer; And / or, the light-emitting epitaxial layer further includes: an N-type current spreading layer located on the side of the N-type confinement layer opposite to the active layer.

10. An electronic device, characterized in that, The electronic device includes the light-emitting diode chip according to any one of claims 1-9.

11. An electronic device as claimed in claim 10, characterized in that, The electronic device includes a display device.

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