Metal organic source injection apparatus

Abstract

The utility model discloses a kind of metal organic source injection equipment.The metal organic source injection equipment includes: carrier gas inlet pipe;Reaction gas source, metal organic source gas is stored in reaction gas source, reaction gas source is connected with carrier gas inlet pipe;Carrier gas outlet pipe includes carrier gas main outlet pipe, at least one first sub-carrier gas outlet pipe and one second carrier gas outlet pipe;First valve, first valve is arranged in first sub-carrier gas outlet pipe, reaction chamber connecting pipeline and gas stabilizing pipeline;Carrier gas main outlet pipe is provided with flow measuring meter, and flow measuring meter is used to measure the proportion of metal organic source gas in mixed gas;First flow control meter is arranged on each first sub-carrier gas outlet pipe;Second carrier gas outlet pipe is provided with pressure gauge.The above technical solution can provide at least one metal organic source gas supply for reaction chamber with only one reaction gas source, which reduces the cost of metal organic source injection equipment.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a metal-organic source injection device. Background Technology

[0002] In the development of CVD (Chemical Vapor Deposition) technology, an increasing number of metal-organic source gases are being used as reactants. These source gases can be solid or liquid, requiring a carrier gas to convert them from liquid or solid to a saturated vapor state before they enter the reaction chamber. This process uses a pressure controller to regulate the source bottle pressure and a water bath to maintain the temperature, ultimately ensuring that the gas entering the chamber is in a stable state.

[0003] In actual manufacturing processes, to grow epitaxial layers with different compositions, thicknesses, and concentrations, the injection rate of the metal-organic source gas can be controlled. This process also requires adjusting the temperature, pressure, and flow rates of other reactant gases in the reaction chamber. Precise control of crystal growth during epitaxial growth is possible, achieving atomic-level thickness accuracy. However, some processes require instantaneous changes in flow rate. In multilayer semiconductor devices, the transitions between different interfaces must be abrupt, necessitating instantaneous flow rate changes to grow layers of varying thicknesses. Generally, the carrier gas volume entering the reactant gas source is fixed; increasing or decreasing the carrier gas volume will cause fluctuations, affecting stability. A conventional solution is to add an organic source configuration. However, this is extremely costly, hindering the development of metal-organic source injection equipment. Utility Model Content

[0004] This invention provides a metal-organic source injection device that requires only one reaction gas source to provide at least one supply of metal-organic source gas to the reaction chamber, thereby reducing the cost of the metal-organic source injection device.

[0005] According to one aspect of the present invention, a metal-organic source injection device is provided, comprising:

[0006] Carrier gas intake pipe;

[0007] A reaction gas source, wherein the reaction gas source stores a metal-organic source gas, and the reaction gas source is connected to the carrier gas inlet pipe, wherein the carrier gas inlet pipe is used to provide carrier gas to the reaction gas source;

[0008] The carrier gas outlet pipe includes a main carrier gas outlet pipe, at least one first sub-carrier gas outlet pipe, and a second carrier gas outlet pipe; the first end of the main carrier gas outlet pipe is connected to the reaction gas source, the first end of the first sub-carrier gas outlet pipe is connected to the second end of the main carrier gas outlet pipe, and the first end of the second carrier gas outlet pipe is connected to the second end of the main carrier gas outlet pipe.

[0009] A first valve is disposed in the first distribution gas outlet pipe, the reaction chamber connecting pipe, and the gas stabilizing pipe; the first valve is used to control the second end of the first distribution gas outlet pipe to connect with the gas stabilizing pipe or to the reaction chamber connecting pipe, and the first valve is also used to control the gas stabilizing pipe to connect with the reaction chamber connecting pipe.

[0010] The second end of the second carrier gas outlet pipe is connected to the gas stabilizing pipe;

[0011] The main outlet pipe of the carrier gas is equipped with a flow meter, which is used to measure the proportion of the metal-organic source gas in the mixed gas.

[0012] Each of the first distribution gas outlet pipes is equipped with a first flow controller;

[0013] The second carrier gas outlet pipe is equipped with a pressure gauge, which is used to detect the pressure of the reaction gas source.

[0014] Optionally,

[0015] When the pressure value measured by the pressure gauge is greater than or equal to the preset pressure value, the switch installed inside the pressure gauge is in the pressure relief state, and the gas stabilization pipeline discharges the internal mixed gas.

[0016] Optionally, when the pressure value measured by the pressure gauge is less than the preset pressure value, the switch installed inside the pressure gauge is in the pressure-boosting state.

[0017] Optionally, the carrier gas intake pipe includes a main carrier gas intake pipe, a first sub-carrier gas intake pipe, and a second sub-carrier gas intake pipe;

[0018] The first end of the first carrier gas inlet pipe is connected to the carrier gas inlet pipe, and the second end of the first carrier gas inlet pipe is connected to the reaction gas source.

[0019] The first end of the second carrier gas inlet pipe is connected to the carrier gas inlet pipe, and the second end of the second carrier gas inlet pipe is connected to the reaction gas source.

[0020] A second flow meter is installed inside the first carrier gas inlet pipe;

[0021] The second carrier air inlet pipe is equipped with a third flow controller.

[0022] Optionally, the number of the first load-bearing gas outlet pipes may include at least two.

[0023] Optionally, the flow rates of the mixed gas flowing out of at least two of the first load-bearing gas outlet pipes are the same or different.

[0024] Optionally, the number of the first load-distribution gas outlet pipes includes at least three, and the flow rates of the mixed gas flowing out of the at least three first load-distribution gas outlet pipes are partially the same or all different.

[0025] Optionally, it also includes a reaction chamber;

[0026] The reaction chamber is connected to the reaction chamber via a connecting pipe.

[0027] Optionally, the ratio of the maximum flow rate of the mixed gas flowing out of the first distributor gas outlet pipe to the minimum flow rate of the mixed gas flowing out of the first distributor gas outlet pipe is greater than or equal to 1.

[0028] Optionally, the ratio of the maximum flow rate of the mixed gas flowing out of the first distributor gas outlet pipe to the minimum flow rate of the mixed gas flowing out of the first distributor gas outlet pipe is less than or equal to 10.

[0029] The metal-organic source injection device provided by this utility model has one reaction gas source and at least one first carrier gas outlet pipe. It eliminates the need to increase the number of reaction gas sources. The flow rate of the mixed gas of the metal-organic source gas and carrier gas entering the reaction chamber's connecting pipe can be adjusted by increasing or decreasing the number of first carrier gas outlet pipes and controlling the flow output value of the first flow controller installed on the first carrier gas outlet pipe. Furthermore, the flow rate of the mixed gas entering the reaction chamber's connecting pipe can be changed according to the required thickness of the semiconductor film to be grown and the flow rate of the metal-organic source gas, thus reducing the manufacturing cost of the metal-organic source injection device. The main carrier gas outlet pipe is equipped with a flow meter to measure the proportion of metal-organic source gas in the mixed gas. Compared to a solution where the main carrier gas outlet pipe is equipped with a concentration meter, the flow meter is less expensive, further reducing the cost of the metal-organic source injection device. A pressure gauge is installed in the second carrier gas outlet pipe. The pressure gauge detects the pressure at the front end, directly detecting the pressure of the reaction gas source. This allows adjustment of the reaction gas source pressure by checking whether the mixed gas is being discharged from the second carrier gas outlet pipe.

[0030] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this utility model, nor is it intended to limit the scope of this utility model. Other features of this utility model will become readily apparent from the following description. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the structure of a metal-organic source injection device provided in an embodiment of this utility model;

[0033] Figure 2 This is a schematic diagram of another metal-organic source injection device provided in an embodiment of the present invention. Detailed Implementation

[0034] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0035] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the utility model described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that includes a series of steps or apparatuses is not necessarily limited to those steps or apparatuses explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatuses.

[0036] like Figure 1 As shown, Figure 1This is a schematic diagram of a metal-organic source injection device provided in an embodiment of the present invention. The metal-organic source injection device includes: a carrier gas inlet pipe 100; a reaction gas source 200, which stores metal-organic source gas and is connected to the carrier gas inlet pipe 100, which provides carrier gas to the reaction gas source; a carrier gas outlet pipe 300, which includes a main carrier gas outlet pipe 301, at least one first sub-carrier gas outlet pipe 302, and a second carrier gas outlet pipe 303; the first end of the main carrier gas outlet pipe 301 is connected to the reaction gas source 200, the first end of the first sub-carrier gas outlet pipe 302 is connected to the second end of the main carrier gas outlet pipe 301, and the first end of the second carrier gas outlet pipe 303 is connected to the second end of the main carrier gas outlet pipe 301; and a first valve. F1, the first valve F1 is installed in the first carrier gas outlet pipe 302, the reaction chamber connecting pipe 400, and the gas stabilizing pipe 500; the first valve F1 is used to control the connection of the second end of the first carrier gas outlet pipe 302 to the gas stabilizing pipe 500 or to the reaction chamber connecting pipe 400, and the first valve F1 is also used to control the connection of the gas stabilizing pipe 500 to the reaction chamber connecting pipe 400; the second end of the second carrier gas outlet pipe 303 is connected to the gas stabilizing pipe 500; the main carrier gas outlet pipe 301 is equipped with a flow meter M, which is used to measure the proportion of metal-organic source gas in the mixed gas; each first carrier gas outlet pipe 302 is equipped with a first flow controller N1; the second carrier gas outlet pipe 303 is equipped with a pressure gauge P, which is used to detect the pressure of the reaction gas source 200.

[0037] Among them, the gas stabilization pipe 500 can also be called the Vent pipe. The reaction chamber connection pipe 400 can also be called the Run pipe.

[0038] The reaction gas source 200 stores metal-organic source gases, including TMGa, TMAl, TMIn, and Cp2Mg, DMZn, etc.

[0039] The carrier gas inlet pipe 100 is used to provide carrier gas to the reaction gas source 200. The carrier gas enters the reaction gas source 200 and carries the metal-organic source gas through the carrier gas outlet pipe 300. The second end of the first carrier gas outlet pipe 302 is connected to the gas stabilization pipe 500. The carrier gas carrying the metal-organic source gas reaches a stable state in the gas stabilization pipe 500. Then, the first valve F1 is also used to control the connection between the gas stabilization pipe 500 and the reaction chamber connection pipe 400, so that the mixed gas of the metal-organic source gas and the carrier gas enters the reaction chamber connection pipe 400 and then enters the reaction chamber for reaction to form a semiconductor layer.

[0040] In this embodiment of the invention, pressure gauge P is installed inside the second carrier gas outlet pipe 303. The function of pressure gauge P is to detect the pressure at the front end, directly detecting the pressure of the reaction gas source 200. Therefore, by checking whether the second carrier gas outlet pipe 303 is discharging the internal mixed gas, the pressure of the reaction gas source 200 is adjusted. When the pressure value is too low, the switch of pressure gauge P is closed in a pressurizing state, which can close the second carrier gas outlet pipe 303 and increase the pressure inside the reaction gas source 200. When the pressure is too high, the switch of pressure gauge P is open in a depressurizing state, which allows the second carrier gas outlet pipe 303 to discharge the internal mixed gas, thereby releasing the pressure inside the reaction gas source 200.

[0041] The technical solution provided by this utility model uses only one reaction gas source 200 and at least one first carrier gas outlet pipe 302. It eliminates the need to increase the number of reaction gas sources 200. The flow rate of the mixed gas of the metal-organic source gas and carrier gas entering the reaction chamber connecting pipe 400 can be adjusted by increasing or decreasing the number of first carrier gas outlet pipes 302 and controlling the flow output value of the first flow controller N1 installed on the first carrier gas outlet pipe 302. Furthermore, the flow rate of the mixed gas of the metal-organic source gas and carrier gas entering the reaction chamber connecting pipe 400 can be changed according to the required thickness of the semiconductor film to be grown and the flow rate of the metal-organic source gas, thus reducing the manufacturing cost of the metal-organic source injection equipment. In addition, the main carrier gas outlet pipe 301 is equipped with a flow meter M, which measures the proportion of the metal-organic source gas in the mixed gas. Compared to a solution where the main carrier gas outlet pipe 301 is equipped with a concentration meter, the cost of the flow meter M is lower than that of the concentration meter, further reducing the cost of the metal-organic source injection equipment. Pressure gauge P is installed inside the second carrier gas outlet pipe 303. The function of pressure gauge P is to detect the pressure at the front end, which is to directly detect the pressure of the reaction gas source 200. In this way, the pressure of the reaction gas source 200 can be adjusted by checking whether the internal mixed gas is discharged through the second carrier gas outlet pipe 303.

[0042] Optionally, based on the above technical solutions, such as Figure 1 and Figure 2 As shown, Figure 2 This is a schematic diagram of another metal-organic source injection device provided in an embodiment of the present invention. When the pressure value measured by the pressure gauge P is greater than or equal to a preset pressure value, the switch installed inside the pressure gauge P is in a pressure relief state, and the gas stabilization pipeline 500 discharges the internal mixed gas to achieve pressure control within the reaction gas source 200. Specifically, the switch installed inside the pressure gauge P is in the pressure relief state when it is open.

[0043] Optionally, based on the above technical solutions, such as Figure 1 and Figure 2As shown, when the pressure value measured by pressure gauge P is less than the preset pressure value, the switch inside pressure gauge P is in the pressure-boosting state. Specifically, when the switch of pressure gauge P is closed and in the pressure-boosting state, the second carrier gas outlet pipe 303 is closed, and the pressure inside the reaction gas source 200 is increased.

[0044] Optionally, based on the above technical solutions, such as Figure 1 and Figure 2 As shown, the carrier gas inlet pipe 100 includes a main carrier gas inlet pipe 101, a first sub-carrier gas inlet pipe 102, and a second sub-carrier gas inlet pipe 103; the first end of the first sub-carrier gas inlet pipe 102 is connected to the main carrier gas inlet pipe 101, and the second end of the first sub-carrier gas inlet pipe 102 is connected to the reaction gas source 200; the first end of the second sub-carrier gas inlet pipe 103 is connected to the main carrier gas inlet pipe 101, and the second end of the second sub-carrier gas inlet pipe 103 is connected to the reaction gas source 200; a second flow controller N2 is installed inside the first sub-carrier gas inlet pipe 102; and a third flow controller N3 is installed in the second sub-carrier gas inlet pipe 103.

[0045] Specifically, the reaction gas source 200 is connected to the carrier gas inlet pipe 100, which is used to provide carrier gas to the reaction gas source. The specific process is as follows:

[0046] The carrier gas enters the reaction gas source 200 through the second flow controller N2 of the first carrier gas inlet pipe 102, thereby carrying the metal-organic source gas. The carrier gas is used as a dilution gas by the third flow controller N3 of the second carrier gas inlet pipe 103 to ensure that the carrier gas and metal-organic source gas output from the reaction gas source 200 are in an unsaturated state, preventing the gas from liquefying in the pipeline.

[0047] It should be noted that a flow meter M is installed in the main carrier gas outlet pipe 301. The flow meter M is used to measure the proportion of the metal-organic source gas in the mixed gas. Compared with the scheme where a concentration meter is installed in the main carrier gas outlet pipe 301, the cost of the flow meter M is lower than that of the concentration meter, thereby further reducing the cost of the metal-organic source injection equipment. This method can calculate the concentration of the metal-organic source gas in the mixed gas through experiments. The experimental procedure is as follows: the third flow controller N3 of the second carrier gas inlet pipe 103 is stopped (for example, twice). After the second flow controller N2 of the first carrier gas inlet pipe 102 is introduced to a certain value and stabilizes, the value of the flow meter M is recorded. Then, the value of the second flow controller N2 of the first carrier gas inlet pipe 102 is modified, and the value of the flow meter M is recorded. By repeating this process multiple times to obtain the ratio between the second flow controller N2 and the flow meter M, the proportion of the metal-organic source gas in the mixed gas in the reaction gas source 200 can be determined.

[0048] Optionally, based on the above technical solutions, such as Figure 2As shown, the number of first load air outlet pipes 302 includes at least two.

[0049] Specifically, without increasing the number of reaction gas sources 200, the flow rate of the mixed gas of the metal-organic source gas and the carrier gas entering the reaction chamber connecting pipe 400 can be changed by increasing or decreasing the number of first carrier gas outlet pipes 302 and controlling the flow output value of the first flow controller N1 set in the first carrier gas outlet pipe 302. Furthermore, the flow rate of the mixed gas of the metal-organic source gas and the carrier gas entering the reaction chamber connecting pipe 400 can be changed according to the required thickness of the semiconductor film to be grown and the flow rate of the metal-organic source gas, thereby reducing the manufacturing cost of the metal-organic source injection equipment.

[0050] Optionally, based on the above technical solutions, such as Figure 2 As shown, the flow rates of the mixed gas flowing out of at least two first sub-carrier gas outlet pipes 302 are the same or different.

[0051] Specifically, by setting the flow control value of the first flow controller N1 in the first carrier gas outlet pipe 302 to be equal, the flow rate of the mixed gas flowing out of at least two first carrier gas outlet pipes 302 can be the same, simplifying the control difficulty of the first flow controller N1 and reducing the control cost of the metal-organic source injection equipment. If the flow rates of the mixed gas flowing out of at least two first carrier gas outlet pipes 302 are different, the sensitivity and accuracy of the flow rate of the mixed gas entering the reaction chamber can be adjusted by setting the flow rate difference of the mixed gas flowing out of the first carrier gas outlet pipes 302.

[0052] Optionally, based on the above technical solution, the number of first load-carrying gas outlet pipes 302 includes at least three, and the flow rates of the mixed gas flowing out of the at least three first load-carrying gas outlet pipes 302 are partially the same or completely different.

[0053] Specifically, by setting the flow control values ​​of the first flow controller N1 in the first carrier gas outlet pipe 302 to be partially the same or completely different, the flow rate of the mixed gas entering the reaction chamber can be adjusted by regulating the flow control values ​​of individual first flow controller N1.

[0054] Optionally, based on the above technical solutions, such as Figure 2 As shown, it also includes a reaction chamber 600; the reaction chamber 600 is connected to the reaction chamber connecting pipe 400.

[0055] Specifically, the mixed gas enters the reaction chamber 600 and reacts to prepare a semiconductor film.

[0056] Optionally, the outlet of the reaction chamber 600 is connected to a pump, and the exhaust gas treatment device is installed after the pump for easy treatment of the exhaust gas.

[0057] Optionally, based on the above technical solution, the ratio of the maximum flow rate of the mixed gas flowing out of the first carrier gas outlet pipe 302 to the minimum flow rate of the mixed gas flowing out of the first carrier gas outlet pipe 302 is greater than or equal to 1. The ratio of the maximum flow rate of the mixed gas flowing out of the first carrier gas outlet pipe 302 to the minimum flow rate of the mixed gas flowing out of the first carrier gas outlet pipe 302 is less than or equal to 10.

[0058] Specifically, by setting the flow control values ​​of the first flow controllers N1 in the first carrier gas outlet pipe 302 to be partially the same or all different, the flow rate of the mixed gas entering the reaction chamber is adjusted by regulating the flow control values ​​of individual first flow controllers N1. Where the maximum flow rate in the first carrier gas outlet pipe 302 is a certain value, the smaller the minimum flow rate in the first carrier gas outlet pipe 302, the higher the sensitivity and accuracy of adjusting the flow rate of the mixed gas entering the reaction chamber by controlling the on / off state of the first flow controller N1 corresponding to the minimum flow rate in the first carrier gas outlet pipe 302.

[0059] The ratio of the maximum flow rate of the mixed gas flowing out of the first carrier gas outlet pipe 302 to the minimum flow rate of the mixed gas flowing out of the first carrier gas outlet pipe 302 is greater than or equal to 1 and less than or equal to 10. On the one hand, this ensures the sensitivity and accuracy of adjusting the flow rate of the mixed gas entering the reaction chamber by controlling the on / off state of the first flow controller N1 corresponding to the minimum flow rate in the first carrier gas outlet pipe 302. On the other hand, it also ensures that the minimum flow rate in the first carrier gas outlet pipe 302 is not too small, thus avoiding a reduction in the adjustment rate.

[0060] If a concentration meter is installed in the main carrier gas outlet pipe 301, the following problems will occur in actual production: Problem 1. Taking a mixed gas containing hydrogen and ethylene as an example, where hydrogen is the carrier gas and the metal-organic source gas includes ethylene, the flow controller controls a single type of gas. The hydrogen flow controller (second flow controller N2) correctly controls the hydrogen flow rate, but the ethylene flow rate may be a different value. The value for controlling the hydrogen-ethylene mixed gas is another number. In addition, some gas is discharged through pressure gauge P, so the actual amount of metal-organic source gas entering the reaction chamber is unknown, increasing the number of experiments required for process formulation. The function of the concentration meter E is to measure the proportion of metal-organic source gas in the mixed gas and accurately calculate the amount of metal-organic source gas entering the reaction chamber. Problem 2. As production progresses, the amount of gas in the reaction gas source 200 will decrease. Without changing the second flow controller N2 and the third flow controller N3, the concentration value will change, indicating that the amount of metal-organic source gas is decreasing. When it decreases to a certain value, the operator needs to replace the reaction gas source 200 in time. Problem 3. The control range of the growth process is not precise enough. If the value of the first flow controller N1 is to be switched instantly, the value of the second flow controller N2 must be changed. At this time, the dilution amount required by the third flow controller N3 must also be changed, which is very easy to cause fluctuations and affect the process results. Moreover, the control ratio is not precise enough (assuming the range of the first flow controller N1 is 0-2000 sccm, it is not accurate to achieve 2050 sccm or 1120 sccm). For problems 1 and 2, the concentration meter E can completely solve the problem. However, the cost of one concentration meter E is about the same as that of 5 flow controllers, which is very high. Moreover, the control method of the concentration meter is different from that of the flow controller, requiring the development of a corresponding control program. In addition, the concentration meter needs to be heated, which increases the workload.

[0061] For example, regarding the problem 1 that may occur in actual production when a concentration meter is installed in the main carrier gas outlet pipe 301, in this embodiment, the beneficial effect of replacing the concentration meter with a flow meter M in the main carrier gas outlet pipe 301 is as follows: This method can experimentally calculate the concentration of the metal-organic source gas in the mixed gas. The experimental process is as follows: The third flow controller N3 of the second carrier gas inlet pipe 103 stops the flow twice. After the second flow controller N2 of the first carrier gas inlet pipe 102 is introduced with a certain value and stabilizes, the value of the flow meter M is recorded. Then, the value of the second flow controller N2 of the first carrier gas inlet pipe 102 is modified, and the value of the flow meter M is recorded. By repeating this process multiple times to obtain the ratio between the second flow controller N2 and the flow meter M, the proportion of the metal-organic source gas in the mixed gas in the reaction gas source 200 can be determined.

[0062] For example, regarding the problem 2 that may arise in actual production when a concentration meter is installed in the main carrier gas outlet pipe 301, the beneficial effects of replacing the concentration meter with a flow meter M in this embodiment are as follows: The PLC program (programmable controller program) and software program for installing the concentration meter in the main carrier gas outlet pipe 301 need to be written separately. If the concentration decreases but does not reach the stage of replacing the reaction gas source 200, the process formula is generally not modified, which may lead to slightly worse process results or even situations where the process fails to meet standards and then the formula needs to be adjusted. The flow meter M installed in the main carrier gas outlet pipe 301 is from the same brand as the first flow controller N1, the second flow controller N2, and the third flow controller N3, and their communication methods are also consistent. Recording the change curves of the flow controller and flow meter M during the process allows for feedback during the process, enabling timely adjustments to the flow rates of the flow controller and flow meter M, ensuring that the process remains very stable throughout the entire lifespan of the source bottle.

[0063] For example, regarding the problem 3 that may occur in actual production when a concentration meter is installed in the main carrier gas outlet pipe 301, the beneficial effects of replacing the concentration meter with a flow meter M in this embodiment are as follows:

[0064] When there are two first-stage gas outlet pipes 302, they are connected in parallel, allowing for two operating modes: 1. Instantaneous switching: The gas pressure before the first flow controller N1 is stable through adjustment by the pressure gauge P. In this mode, no operation of the second flow controller N2 or the third flow controller N3 is required. Closing one first flow controller N1 and opening the other allows excess gas to be discharged from the pressure gauge P without fluctuation. 2. Proportional control: Assuming one first flow controller N1 has a range of 0-2000 sccm and the other has a range of 0-100 sccm, the flow rate entering the reaction chamber 600 can be precisely controlled within the range of 2050 sccm-1120 sccm, greatly improving process controllability.

[0065] In summary, the technical solution of this embodiment uses the same source bottle (reaction gas source 200) and carrier gas source injection method, which reduces source blocks, reduces configuration costs, and improves space utilization; it increases stability, and there is no fluctuation when the flow meter switches instantaneously; using one organic source bottle (reaction gas source 200) and carrier gas source reduces gas consumption; using a flow meter instead of a concentration meter reduces costs and program complexity; it improves process controllability and increases the process window; by stopping the gas supply through the third flow controller N3 of the second carrier gas inlet pipe 103 (for example, twice), after the second flow controller N2 of the first carrier gas inlet pipe 102 is supplied with a certain value and stabilizes, the value of the flow meter M is recorded, and then the value of the second flow controller N2 of the first carrier gas inlet pipe 102 is modified and the value of the flow meter M is recorded. By repeatedly obtaining the ratio between the second flow controller N2 and the flow meter M, the feedback method for determining the proportion of the metal-organic source gas in the reaction gas source 200 in the mixed gas can be determined, thus ensuring a higher yield of qualified wafers throughout the entire production cycle.

[0066] It should be understood that the various forms of the process shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this utility model can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this utility model can be achieved, and this is not limited herein.

[0067] The specific embodiments described above do not constitute a limitation on the scope of protection of this utility model. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the scope of protection of this utility model.

Claims

1. A metal-organic source injection device, characterized in that, include: Carrier gas intake pipe; A reaction gas source, wherein the reaction gas source stores a metal-organic source gas, and the reaction gas source is connected to the carrier gas inlet pipe, wherein the carrier gas inlet pipe is used to provide carrier gas to the reaction gas source; The carrier gas outlet pipe includes a main carrier gas outlet pipe, at least one first sub-carrier gas outlet pipe, and a second carrier gas outlet pipe; the first end of the main carrier gas outlet pipe is connected to the reaction gas source, the first end of the first sub-carrier gas outlet pipe is connected to the second end of the main carrier gas outlet pipe, and the first end of the second carrier gas outlet pipe is connected to the second end of the main carrier gas outlet pipe. A first valve is disposed in the first distribution gas outlet pipe, the reaction chamber connecting pipe, and the gas stabilizing pipe; the first valve is used to control the second end of the first distribution gas outlet pipe to connect with the gas stabilizing pipe or to the reaction chamber connecting pipe, and the first valve is also used to control the gas stabilizing pipe to connect with the reaction chamber connecting pipe. The second end of the second carrier gas outlet pipe is connected to the gas stabilizing pipe; The main outlet pipe of the carrier gas is equipped with a flow meter, which is used to measure the proportion of the metal-organic source gas in the mixed gas. Each of the first distribution gas outlet pipes is equipped with a first flow controller; The second carrier gas outlet pipe is equipped with a pressure gauge, which is used to detect the pressure of the reaction gas source.

2. The metal-organic source injection device according to claim 1, characterized in that, When the pressure value measured by the pressure gauge is greater than or equal to the preset pressure value, the switch installed inside the pressure gauge is in the pressure relief state, and the gas stabilization pipeline discharges the internal mixed gas.

3. The metal-organic source injection device according to claim 1, characterized in that, When the pressure value measured by the pressure gauge is less than the preset pressure value, the switch installed inside the pressure gauge is in the pressure-boosting state.

4. The metal-organic source injection device according to claim 1, characterized in that, The carrier gas intake pipe includes a main carrier gas intake pipe, a first sub-carrier gas intake pipe, and a second sub-carrier gas intake pipe; The first end of the first carrier gas inlet pipe is connected to the main carrier gas inlet pipe, and the second end of the first carrier gas inlet pipe is connected to the reaction gas source. The first end of the second carrier gas inlet pipe is connected to the main carrier gas inlet pipe, and the second end of the second carrier gas inlet pipe is connected to the reaction gas source. A second flow meter is installed inside the first carrier gas inlet pipe; The second carrier air inlet pipe is equipped with a third flow controller.

5. The metal-organic source injection device according to claim 1, characterized in that, The number of the first load-bearing gas outlet pipes includes at least two.

6. The metal-organic source injection device according to claim 5, characterized in that, The flow rates of the mixed gas flowing out of at least two of the first sub-carrier gas outlet pipes are the same or different.

7. The metal-organic source injection device according to claim 5, characterized in that, The number of the first load-distribution gas outlet pipes includes at least three, and the flow rates of the mixed gas flowing out of the at least three first load-distribution gas outlet pipes are partially the same or completely different.

8. The metal-organic source injection device according to claim 1, characterized in that, It also includes a reaction chamber; The reaction chamber is connected to the reaction chamber via a connecting pipe.

9. The metal-organic source injection device according to claim 7, characterized in that, The ratio of the maximum flow rate of the mixed gas flowing out of the first distributor outlet pipe to the minimum flow rate of the mixed gas flowing out of the first distributor outlet pipe is greater than or equal to 1.

10. The metal-organic source injection device according to claim 7, characterized in that, The ratio of the maximum flow rate of the mixed gas flowing out of the first distributor gas outlet pipe to the minimum flow rate of the mixed gas flowing out of the first distributor gas outlet pipe is less than or equal to 10.

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