Crucible assembly for a crystal growth apparatus and crystal growth apparatus

Abstract

The utility model discloses a kind of for crystal growth device's crucible assembly and crystal growth device, it is related to crystal growth technical field, crucible assembly includes: crucible main body and crucible cover, crucible main body defines and installs groove, crucible cover cover is located at the open end of installation groove;At least part of flow guide part structure is located in installation groove, flow guide part structure and crucible main body jointly define and accommodate cavity, accommodate cavity accommodates solution for crystal growth, crucible cover and flow guide part structure are used for the upper pulling shaft of crystal growth device to pass through, flow guide part structure is also configured to inhibit the evaporation loss of corresponding solute in the case where solution in accommodating cavity vaporizes and grows crystal. By setting flow guide part structure, the evaporation loss of corresponding solute can be inhibited, it is favorable to reduce that solution component changes too much risk, to maintain the growth environment of crystal long-term stability, it is favorable to crystal high quality, long time stable growth, effectively improve crystal quality.

Description

Technical Field

[0001] This utility model relates to the field of crystal growth technology, and in particular to a crucible assembly for a crystal growth apparatus and a crystal growth apparatus having the crucible for the crystal growth apparatus. Background Technology

[0002] In related technologies, the evaporation of volatile solutes from the solution is a common problem in crystal growth in solution, especially at high temperatures. The evaporation of volatile solutes can lead to deviations in solution composition, affecting the long-term stable growth of crystals, resulting in problems such as poor surface morphology and uneven doping, and poor crystal quality. Utility Model Content

[0003] This invention aims to solve at least one of the technical problems existing in the prior art. Therefore, one objective of this invention is to provide a crucible assembly for a crystal growth apparatus that suppresses the evaporation loss of the corresponding solute, reduces the risk of excessive changes in solution composition, maintains long-term stability of the crystal growth environment, and effectively improves crystal quality.

[0004] This invention further proposes a crystal growth apparatus.

[0005] According to the present invention, a crucible assembly for a crystal growth apparatus includes: a crucible body and a crucible cover, the crucible body and the crucible cover being arranged vertically, the crucible cover being located above the crucible body, the crucible body defining a mounting groove opening toward the crucible cover, the crucible cover being disposed at the open end of the mounting groove and fixed to the crucible body; a flow guiding structure being located below the crucible cover, at least a portion of the flow guiding structure being disposed within the mounting groove, the flow guiding structure being fixed to the groove sidewall of the crucible body, the flow guiding structure and the crucible body jointly defining a receiving cavity, the receiving cavity being adapted to contain a solution for crystal growth, the crucible cover and the flow guiding structure being configured to allow the upper lifting shaft of the crystal growth apparatus to pass through, and the flow guiding structure being further configured to suppress the evaporation loss of the corresponding solute when the solution in the receiving cavity evaporates to grow the crystal.

[0006] According to the present invention, the crucible assembly for a crystal growth apparatus, by setting a flow guiding structure, can suppress the evaporation loss of the corresponding solute, which helps to reduce the risk of excessive changes in solution composition, thereby maintaining the long-term stability of the crystal growth environment, which is conducive to high-quality and long-term stable crystal growth, and effectively improving crystal quality.

[0007] In some examples of this utility model, the flow guiding part structure includes: a first flow guiding wall, which is annular and extends circumferentially along the crucible body. The lower end of the first flow guiding wall is fixed to the side wall of the tank, and the first flow guiding wall is inclined away from the side wall of the tank from the crucible body to the crucible cover.

[0008] In some examples of this utility model, an angle is formed between the first guide wall and the side wall of the tank, and the angle is adjustable; and / or, a first space is formed between the first guide wall and the side wall of the tank, and the first space is arranged around the first guide wall along the circumference of the crucible body; and / or, the crucible cover contacts at least one of the upper end face of the side wall of the tank and the upper end face of the first guide wall.

[0009] In some examples of this utility model, the flow guide structure further includes: a second flow guide wall, the upper end of the first flow guide wall having a first opening, the second flow guide wall covering the first opening and fixed to the first flow guide wall, and the second flow guide wall being used for the upper lifting shaft to pass through.

[0010] In some examples of this invention, the second guide wall is located above the first guide wall and contacts the upper end face of the first guide wall; and / or, the second guide wall is formed with a first through hole for the upper lifting shaft to pass through; and / or, at least a portion of the second guide wall is located inside the crucible lid.

[0011] In some examples of this invention, the crucible lid defines a second space.

[0012] In some examples of this utility model, the crucible lid includes: a first lid end wall, a lid peripheral wall, and a second lid end wall. The first lid end wall and the second lid end wall are opposite to each other and spaced apart in the vertical direction. The first lid end wall is located below the second lid end wall and contacts at least one of the upper end surface of the tank side wall and the upper end surface of the first guide wall. The lid peripheral wall is arranged along the circumferential edge of the first lid end wall and the circumferential edge of the second lid end wall, so that the first lid end wall, the lid peripheral wall, and the second lid end wall together define a second space.

[0013] In some examples of this utility model, a second through hole is formed in the first end wall of the cap, and a third through hole is formed in the second end wall of the cap. The second through hole and the third through hole are opposite each other in the vertical direction, and both the second through hole and the third through hole are used for the upper lifting shaft to pass through. The crucible cap also includes an annular retaining edge, which is provided on the surface of the second end wall of the cap facing the first end wall of the cap, and the annular retaining edge is arranged around the third through hole in the circumferential direction of the third through hole.

[0014] A crystal growth apparatus according to an embodiment of the present invention includes: a heating device having a heating chamber; a crucible assembly assembled in the heating chamber, the crucible assembly being the crucible assembly described in the above embodiment; and an upper lifting shaft extending in a vertical direction, passing through the crucible cover and the flow guide structure to extend into the receiving cavity, the upper lifting shaft being suitable for carrying a seed crystal.

[0015] In some examples of this utility model, the upper lifting shaft includes a shaft body and a support drag for carrying the seed crystal. The lower end of the shaft body is fixed with the support drag, which is located in the receiving cavity. The shaft body passes through the crucible cover and the flow guide structure. And / or, it also includes: an induction coil, which is arranged around the heating device along the circumference of the heating device. And / or, the heating device includes: a heat insulation layer and a heating element, the heat insulation layer defining the heating cavity, and the heating element being disposed in the heating cavity.

[0016] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0017] The above and / or additional aspects and advantages of this utility model will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0018] Figure 1 This is a cross-sectional view of the crucible assembly according to an embodiment of the present utility model;

[0019] Figure 2 This is a cross-sectional view of the growth apparatus according to an embodiment of the present invention.

[0020] Figure label:

[0021] Crystal growth apparatus 100;

[0022] Crucible assembly 10;

[0023] Crucible body 1; mounting groove 11; groove sidewall 12; receiving cavity 13;

[0024] 2. Crucible lid; 21. Second space; 22. First lid end wall; 221. Second through hole; 23. Peripheral wall of lid; 24. Second lid end wall; 241. Third through hole; 25. Annular retaining edge;

[0025] Flow guide structure 3; first flow guide wall 31; first space 311; first opening 312; second flow guide wall 32; first through hole 321;

[0026] Solution 20;

[0027] Heating device 30;

[0028] Upper lifting shaft 4; shaft body 41; load-bearing tractor 42;

[0029] Insulation layer 5; Heating cavity 51; Upper insulation layer 52; Lower insulation layer 53;

[0030] Heating element 6;

[0031] Induction coil 40;

[0032] Support rod 50. Detailed Implementation

[0033] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0034] The following is for reference. Figures 1-2 The crucible assembly 10 according to an embodiment of the present invention is described.

[0035] like Figure 1 As shown, the crucible assembly 10 for a crystal growth apparatus 100 according to the present invention includes: a crucible body 1 and a crucible cover 2, the crucible body 1 and the crucible cover 2 being arranged in a vertical direction, the crucible cover 2 being located above the crucible body 1, the crucible body 1 defining a mounting groove 11 opening toward the crucible cover 2, the crucible cover 2 being placed over the open end of the mounting groove 11 and fixed to the crucible body 1; a flow guiding structure 3, the flow guiding structure 3 being located below the crucible cover 2, at least a portion of the flow guiding structure 3 being disposed within the mounting groove 11, the flow guiding structure 3 being fixed to the groove sidewall 12 of the crucible body 1, the flow guiding structure 3 and the crucible body 1 jointly defining a receiving cavity 13, the receiving cavity 13 being adapted to contain a solution 20 for crystal growth, the crucible cover 2 and the flow guiding structure 3 being configured to allow the upper lifting shaft 4 of the crystal growth apparatus 100 to pass through, and the flow guiding structure 3 being further configured to suppress the evaporation loss of the corresponding solute when the solution 20 in the receiving cavity 13 evaporates to grow crystals.

[0036] Both the crucible body 1 and the crucible lid 2 can be constructed of graphite material with a density <1.7 g / cm³ and a porosity of 10%-15%, for example, 10%, 12%, or 15%, providing a suitable environment for crystal growth. The crucible body 1 and the crucible lid 2 are arranged vertically, with the lid 2 positioned above the body 1. The body 1 defines a mounting groove 11, which opens towards the lid 2. The lid 2 covers the open end of the mounting groove 11 and is fixed to the body 1, thus defining the mounting space together. It should be noted that the connection between the bottom and side walls of the crucible body 1 can have curvature to reduce the risk of turbulence and eddies during the rotation of the solution 20.

[0037] The flow guiding structure 3 is located below the crucible cover 2. At least a portion of the flow guiding structure 3 is disposed within the mounting groove 11. For example, a portion of the flow guiding structure 3 is disposed within the mounting groove 11, or the entire structure of the flow guiding structure 3 is disposed within the mounting groove 11. The flow guiding structure 3 is fixed to the groove sidewall 12 of the crucible body 1. As some embodiments of this application, the flow guiding structure 3 and the groove sidewall 12 can be integrally formed. As some embodiments of this application, the flow guiding structure 3 and the groove sidewall 12 can be designed separately and fixedly connected. The flow guiding structure 3 and the crucible body 1 together define a receiving cavity 13, which contains the solution 20 used for crystal growth during the crystal growth process.

[0038] Both the crucible lid 2 and the flow guiding structure 3 are configured to allow the upper lifting shaft 4 of the crystal growth apparatus 100 to pass through. The upper lifting shaft 4 may include a shaft body 41 and a support drag 42 for carrying the seed crystal. The shaft body 41 and the support drag 42 may be fixedly connected by, but is not limited to, integral molding, snap-fitting, or other methods. Furthermore, both the crucible lid 2 and the flow guiding structure 3 are configured to allow the shaft body 41 to pass through. When the crystal grows, by lifting the shaft body 41, the vertical position of the support drag 42 is changed, which facilitates driving the seed crystal to contact the solution 20, thereby achieving the effect of smooth crystal growth.

[0039] The flow guide structure 3 is also configured to suppress the evaporation loss of the corresponding solute (e.g., aluminum Al, silicon Si, etc.) when the solution 20 in the containment cavity 13 evaporates to grow crystals. It is understood that reducing the level of aluminum evaporation or escape from the solution 20 helps to make the aluminum doping level more uniform during crystal growth, which is beneficial to improving resistivity consistency, reducing silicon component volatilization, reducing the degree of thermal field corrosion, and improving the service life of the thermal field, while having almost no impact on the temperature distribution and flow field environment in the solution 20.

[0040] The thickness of the flow guiding structure 3 can be 2mm-5mm, for example, 2mm, 3mm, or 5mm. A coating can be applied to the side of the flow guiding structure 3 that contacts the evaporated solute. The coating material should be one that does not react with the components of the evaporated solute, such as tantalum carbide, niobium carbide, or tungsten carbide. This reduces the risk of changes in the solution composition or a reduction in the service life of the flow guiding structure 3 due to the reaction between the solute and the flow guiding structure 3.

[0041] By setting the flow guiding structure 3, it is beneficial to reduce the evaporation loss of solute and reduce the risk of excessive changes in the composition of solution 20, thereby maintaining the long-term stability of the crystal growth environment. This is conducive to high-quality and long-term stable crystal growth, effectively increasing the single crystal growth thickness, improving the surface morphology and doping uniformity of the crystal, reducing the possibility of spontaneous nucleation on the crystal surface, suppressing two-dimensional nucleation, maintaining crystal stability, and thus effectively improving the quality of the crystal.

[0042] Furthermore, the crucible body 1 can be constructed as a split structure. In some embodiments of this application, the split section is located at the lower end of the flow guiding structure 3. In some embodiments of this application, the split section is located at a certain distance from the upper surface of the solution 20. The lower part is used to hold the solution 20, while the upper part can be recycled. This design can save on crystal growth costs.

[0043] Specifically, solution 20 is constructed as a flux solution. The flux solution raw materials may include silicon-transition metal-additive melting. The additive includes a silicon-carbon composite material. The silicon-carbon composite material is a composite material with a loose porous structure made by mixing high-purity silicon powder, carbon powder, and aluminum powder in a ratio of 1:(0.5-1):(0.2-1) and by mixing, sand milling, slurry preparation, and spray granulation. The additive can provide silicon, carbon, and aluminum elements to maintain the stability of the solution 20 system and promote the long-term stable growth of single crystals. The mass ratio of the flux solution is silicon:transition metal:additive = (0.3-0.6):(0.2-0.5):(0.02-0.1). This additive can maintain the stability of the crystal growth environment of the flux solution and provide a basis for long-term stable crystal growth.

[0044] The seed crystal is bonded to the support carrier 42, and the proportioned raw material is placed into the bottom of the receiving cavity 13 from the open end. The crucible cover 2 is fixed above the crucible body 1 so that the crucible cover 2 covers the open end of the mounting groove 11, at which point the shaft 41 passes through the crucible cover 2. Vacuum is drawn until the pressure is <10. -4 Pa, the crucible assembly 10 is heated to 1700℃-2000℃ at a heating rate of 10℃ / min, so that the prepared raw materials are melted into solution 20. After the temperature stabilizes, the drive shaft 41 is lowered so that the seed crystal bonded to the bearing 42 comes into contact with the surface of solution 20. The crucible is driven to rotate at a rate of 0r / min-100r / min, and the seed crystal is driven to rotate in the opposite direction at a rate of 0r / min-100r / min by the rotation of the drive shaft 41. At this time, the seed crystal begins to be pulled upward at a certain rate to grow into a crystal.

[0045] After crystal growth, the shaft 41 is pulled up to separate the crystal from the solution 20 and allow it to enter the cooling section. After cooling to room temperature, the crucible is opened and the crystal is removed. The flow guiding structure 3 is located below the crucible cover 2 and is installed in the mounting groove 11. The flow guiding structure 3 is fixed to the groove side wall 12 of the crucible body 1. During the heating or crystal growth process of the crucible assembly 10, it can suppress the unsteady transport of solute while continuously feeding, which helps to reduce the evaporation loss of solute, thereby reducing the evolution of the composition of the solution 20, maintaining the long-term stability of the growth environment, improving the uniformity of doping of P-type SiC crystal growth and maintaining crystal stability, and finally achieving the effect of long-term stable growth of high-quality P-type SiC single crystals by the solution 20 method.

[0046] Therefore, by setting the flow guiding structure 3, the evaporation loss of the corresponding solute can be suppressed, which helps to reduce the risk of excessive changes in the composition of solution 20, thereby maintaining the long-term stability of the crystal growth environment, which is conducive to the high-quality and long-term stable growth of crystals and effectively improves the crystal quality.

[0047] In some examples of this utility model, such as Figure 1 As shown, the flow guiding structure 3 may include: a first flow guiding wall 31, which is annular and extends circumferentially along the crucible body 1. The lower end of the first flow guiding wall 31 is fixed to the side wall 12 of the tank, and the first flow guiding wall 31 is inclined away from the side wall 12 of the tank in the direction from the crucible body 1 to the crucible cover 2.

[0048] The first guide wall 31 is annular and extends circumferentially along the crucible body 1. The lower end of the first guide wall 31 is fixed to the side wall 12 of the tank. For example, the first guide wall 31 and the side wall 12 are integrally formed, or the first guide wall 31 and the side wall 12 are bonded together. From the crucible body 1 to the crucible cover 2, the first guide wall 31 is inclined away from the side wall 12. This arrangement makes the first guide wall 31 more rationally positioned, which helps reduce solute evaporation loss and thus maintains the long-term stability of the crystal growth environment.

[0049] In some examples of this utility model, such as Figure 1 As shown, the first guide wall 31 and the side wall 12 of the channel form an angle, and the angle is adjustable.

[0050] The upper diameter of the first guide wall 31 is D, satisfying the relationship: 150mm ≤ D ≤ 200mm (applicable to 6-inch and 8-inch silicon carbide crystal growth). That is, the upper diameter D of the first guide wall 31 can be any value between 150mm and 200mm, for example, 150mm, 170mm, or 200mm. The first guide wall 31 forms an angle with the tank sidewall 12. Changing the upper diameter D of the first guide wall 31 allows for a change in the angle between the two sides, achieving an adjustable angle. Reasonable adjustment of the angle facilitates the application of the crucible assembly 10 to silicon carbide crystal growth of different sizes, thereby improving the versatility of the crucible assembly 10.

[0051] In some examples of this utility model, such as Figure 1 As shown, the upper end of the first guide wall 31 is flush with the upper end of the channel sidewall 12.

[0052] The upper end of the first guide wall 31 is flush with the upper end of the groove side wall 12. This arrangement makes the structural design of the first guide wall 31 and the groove side wall 12 reasonable. When the crucible cover 2 is placed on the open end of the mounting groove 11, it is beneficial for the crucible cover 2 to abut against the upper end of the first guide wall 31 and the upper end of the groove side wall 12, which helps to improve the stability of the crucible cover 2, thereby providing a stable growth environment for the crystal and further improving the crystal quality.

[0053] In some examples of this utility model, such as Figure 1 As shown, a first space 311 is formed between the first guide wall 31 and the side wall 12 of the tank. The first space 311 is arranged around the first guide wall 31 along the circumference of the crucible body 1.

[0054] A first space 311 is formed between the first guide wall 31 and the side wall 12 of the tank. The first space 311 is arranged around the first guide wall 31 along the circumference of the crucible body 1, which can reduce the risk of heat loss inside the crucible body 1.

[0055] In some examples of this utility model, such as Figure 1 As shown, the flow guide structure 3 may further include: a second flow guide wall 32, the upper end of the first flow guide wall 31 having a first opening 312, the second flow guide wall 32 covering the first opening 312 and fixed to the first flow guide wall 31, and the second flow guide wall 32 being used for the upper lifting shaft 4 to pass through.

[0056] The first guide wall 31 has a first opening 312 at its upper end. The second guide wall 32 can be constructed as a circular graphite plate, covering the first opening 312 and fixed to the first guide wall 31. The second guide wall 32 can have a first through hole, the size of which is slightly larger than the diameter of the lifting shaft by 1mm-2mm. The upper lifting shaft 4 can pass smoothly through the first through hole, allowing the second guide wall 32 to facilitate the passage of the upper lifting shaft 4. This makes it easier to drive the seed crystal fixed to the support to contact the solution 20 by driving the upper lifting shaft 4, thus reducing the difficulty of driving the seed crystal.

[0057] In some examples of this utility model, such as Figure 1 As shown, the second guide wall 32 is located above the first guide wall 31 and is in contact with the upper end surface of the first guide wall 31.

[0058] The second guide wall 32 is located above the first guide wall 31, and the second guide wall 32 is in contact with the upper end face of the first guide wall 31. This helps to improve the sealing performance between the second guide wall 32 and the first guide wall 31, reduce the risk of solute evaporation from the gap between the second guide wall 32 and the first guide wall 31, thereby reducing solute evaporation loss and maintaining the long-term stability of the crystal growth environment.

[0059] In some examples of this utility model, such as Figure 1 As shown, the second guide wall 32 is formed with a first through hole 321 for the upper lifting shaft 4 to pass through.

[0060] The second guide wall 32 has a first through hole 321, which is the first through hole in the above embodiment. The size of the first through hole 321 is slightly larger than the diameter of the lifting shaft by 1mm-2mm. The upper lifting shaft 4 can pass smoothly through the first through hole 321 so that the second guide wall 32 can be used for the upper lifting shaft 4 to pass through. This facilitates driving the seed crystal fixed on the support to contact the solution 20 by driving the upper lifting shaft 4, thereby reducing the difficulty of driving the seed crystal.

[0061] In some examples of this utility model, such as Figure 1 As shown, at least a portion of the second flow guide wall 32 is located inside the crucible lid 2.

[0062] The diameter of the second guide wall 32 is smaller than the inner diameter of the crucible lid 2 and larger than the upper diameter of the first guide wall 31. At least a portion of the second guide wall 32 is located inside the crucible lid 2. For example, a portion of the second guide wall 32 is located inside the crucible lid 2, or the entire second guide wall 32 is located inside the crucible lid 2. This allows the crucible lid 2 to limit the position of the second guide wall 32, reducing the risk of solute evaporation from the gap between the second guide wall 32 and the first guide wall 31 due to displacement of the second guide wall 32. This reduces solute evaporation loss and maintains the long-term stability of the crystal growth environment.

[0063] In some examples of this utility model, such as Figure 1 As shown, the crucible lid 2 is in contact with at least one of the upper end face of the tank sidewall 12 and the upper end face of the first guide wall 31.

[0064] In some embodiments of this application, the crucible lid 2 contacts one of the upper end face of the tank sidewall 12 and the upper end face of the first guide wall 31. In some embodiments of this application, the inner diameter of the crucible lid 2 is larger than the upper inner diameter of the first guide wall 31 and smaller than the lower outer diameter of the first guide wall 31, and the outer diameter of the crucible lid 2 is larger than the lower outer diameter of the first guide wall 31, so that the crucible lid 2 contacts both the upper end face of the tank sidewall 12 and the upper end face of the first guide wall 31. This application uses the example of the crucible lid 2 contacting both the upper end face of the tank sidewall 12 and the upper end face of the first guide wall 31. This arrangement allows the crucible lid 2 to be stably placed on the crucible body 1, thereby enabling the crystal to grow stably within the crucible assembly 10. It also allows the crucible assembly 10 to form a sealed structure, suppressing the volatilization and transport of solute and solvent components.

[0065] In some examples of this utility model, such as Figure 1 As shown, the crucible lid 2 defines the second space 21.

[0066] The crucible lid 2 defines a second space 21. This design can reduce the overall influence of the crucible assembly 10 on the temperature distribution and flow field environment in the solution 20. Furthermore, the crucible lid 2, which defines the second space 21, can adjust the axial and radial temperature gradient of the crucible assembly 10, thereby reducing the axial transport of solute components.

[0067] In some examples of this utility model, such as Figure 1 As shown, the crucible lid 2 may include: a first lid end wall 22, a lid peripheral wall 23, and a second lid end wall 24. The first lid end wall 22 and the second lid end wall 24 are opposite to each other and spaced apart in the vertical direction. The first lid end wall 22 is located below the second lid end wall 24 and contacts at least one of the upper end surface of the tank side wall 12 and the upper end surface of the first guide wall 31. The lid peripheral wall 23 is arranged along the circumferential edge of the first lid end wall 22 and the circumferential edge of the second lid end wall 24, so that the first lid end wall 22, the lid peripheral wall 23, and the second lid end wall 24 together define the second space 21.

[0068] The first cap end wall 22 and the second cap end wall 24 are arranged opposite each other in the vertical direction and are spaced apart in the vertical direction. The first cap end wall 22 is located below the second cap end wall 24 and is in contact with at least one of the upper end surfaces of the channel side wall 12 and the first guide wall 31. In some embodiments of this application, the first cap end wall 22 is in contact with one of the upper end surfaces of the channel side wall 12 and the first guide wall 31. In some embodiments of this application, the first cap end wall 22 is in contact with both the upper end surfaces of the channel side wall 12 and the first guide wall 31.

[0069] The peripheral wall 23 is arranged along the circumferential edge of the first end wall 22 and the circumferential edge of the second end wall 24, so that the first end wall 22, the peripheral wall 23 and the second end wall 24 together define the second space 21. This arrangement can reduce the influence of the crucible assembly 10 as a whole on the temperature distribution and flow field environment in the solution 20, and defining the second space 21 can adjust the axial and radial temperature gradient of the crucible assembly 10 and reduce the axial transport of solute components.

[0070] In some examples of this utility model, such as Figure 1 As shown, the first cover end wall 22 has a second through hole 221, and the second cover end wall 24 has a third through hole 241. The second through hole 221 and the third through hole 241 are opposite each other in the vertical direction. Both the second through hole 221 and the third through hole 241 are used for the upper lifting shaft 4 to pass through.

[0071] The second through hole 221 and the third through hole 241 are arranged opposite each other in the vertical direction. Both the second through hole 221 and the third through hole 241 are used for the upper lifting shaft 4 to pass through, so that the upper lifting shaft 4 can extend to the outside of the crucible assembly 10, which facilitates the driving of the seed crystal fixed on the support to contact the solution 20 by driving the upper lifting shaft 4, thereby reducing the difficulty of driving the seed crystal.

[0072] In some examples of this utility model, such as Figure 1 As shown, the crucible cover 2 may further include an annular retaining edge 25, which is disposed on the surface of the second cover end wall 24 facing the first cover end wall 22, and the annular retaining edge 25 is disposed around the third through hole 241 in the circumferential direction.

[0073] The annular baffle 25 is located on the surface of the second end wall 24 facing the first end wall 22, and is arranged around the third through hole 241 along the circumference of the third through hole 241. This arrangement allows the position of the annular baffle 25 to be set reasonably, thereby making the structure of the crucible cover 2 more reasonable. This further reduces the influence of the crucible assembly 10 as a whole on the temperature distribution and flow field environment in the solution 20, and is beneficial to adjusting the axial and radial temperature gradient of the crucible assembly 10 and reducing the axial transport of solute components.

[0074] like Figure 2 As shown, the crystal growth apparatus 100 according to the present invention includes: a heating device 30, the heating device 30 forming a heating chamber 51; a crucible assembly 10, the crucible assembly 10 being assembled in the heating chamber 51, the crucible assembly 10 being the crucible assembly 10 of the above embodiment; and an upper lifting shaft 4, the upper lifting shaft 4 extending in the vertical direction, the upper lifting shaft 4 passing through the crucible cover 2 and the flow guiding structure 3 to extend into the receiving cavity 13, the upper lifting shaft 4 being suitable for carrying seed crystals.

[0075] The heating device 30 includes a heating chamber 51, within which the crucible assembly 10 is assembled to raise its temperature, providing a suitable growth environment for the crystal. The upper lifting shaft 4 extends vertically and passes through the crucible cover 2 and the flow guide structure 3, extending into the receiving cavity 13. This facilitates driving the seed crystal, fixed to the support holder, into contact with the solution 20, reducing the difficulty of driving the seed crystal. The upper lifting shaft 4 can carry the seed crystal and may include a shaft body 41 and a support holder 42 for carrying the seed crystal. The shaft body 41 passes through the crucible cover 2 and the flow guide structure 3, extending into the receiving cavity 13. The lower end of the shaft body 41 is fixed with the support holder 42, securing the seed crystal to the support holder. By driving the shaft body 41 up and down, the seed crystal can selectively contact the solution 20, achieving successful crystal growth.

[0076] Specifically, the seed crystal is fixed on the support carrier 42, the raw material of solution 20 is placed at the bottom of the crucible assembly 10, the crucible assembly 10 is assembled in the heating chamber 51, the crystal growth furnace is turned off, and a vacuum is drawn until the pressure is <10. -4 Pa is heated to 1700℃-2000℃ at a heating rate of 10℃ / min to melt the raw material in solution 20. After the temperature stabilizes, the shaft 41 is driven downward to lower the seed crystal fixed on the support 42 so that the seed crystal contacts the surface of solution 20. The crucible assembly 10 is driven to rotate at a rate of 0r / min-100r / min, and the seed crystal rotates in the opposite direction at a rate of 0r / min-100r / min so that the seed crystal begins to grow upward at a certain rate. After the crystal growth is completed, the shaft 41 is driven upward to separate the crystal from solution 20 and enter the cooling section. After cooling to room temperature, the crystal growth furnace is opened and the crystal is taken out.

[0077] Therefore, by setting the flow guiding structure 3, the evaporation loss of the corresponding solute can be suppressed, which helps to reduce the risk of excessive changes in the composition of solution 20, thereby maintaining the long-term stability of the crystal growth environment, which is conducive to the high-quality and long-term stable growth of crystals and effectively improves the crystal quality.

[0078] In some examples of this utility model, such as Figure 2 As shown, the upper lifting shaft 4 includes a shaft body 41 and a support drag 42 for carrying the seed crystal. The lower end of the shaft body 41 is fixed with the support drag 42, which is located in the receiving cavity 13. The shaft body 41 passes through the crucible cover 2 and the flow guiding structure 3.

[0079] The upper lifting shaft 4 includes a shaft body 41 and a support drag 42 for carrying the seed crystal. The support drag 42 is fixed at the lower end of the shaft body 41 and is located in the receiving cavity 13. The shaft body 41 passes through the crucible cover 2 and the flow guiding structure 3. By driving the shaft body 41 to move up and down, the seed crystal can selectively contact the solution 20, so as to achieve the effect of smooth crystal growth and separation from the solution 20 for cooling.

[0080] In some examples of this utility model, such as Figure 2 As shown, the heating device 30 may include: a heat insulation layer 5 and a heating element 6. The heat insulation layer 5 defines a heating cavity 51, and the heating element 6 is disposed in the heating cavity 51.

[0081] The insulation layer 5 defines the heating cavity 51, and the heating element 6 is disposed in the heating cavity 51. Furthermore, the insulation layer 5 is arranged around the heating element 6 along the circumference of the heating element 6. This arrangement can keep the heating element 6 warm by the insulation layer 5, which is beneficial to increasing the temperature rise rate of the heating element 6, thereby saving the crystal growth time.

[0082] In some examples of this utility model, such as Figure 2 As shown, the heating element 6 is annular and is arranged around the crucible assembly 10 along the circumference of the heating device 30.

[0083] The heating element 6 is annular and arranged around the circumference of the heating device 30. The heating element 6 surrounds the crucible assembly 10 so that the crucible assembly 10 is heated evenly in the circumference, which is conducive to uniform crystal growth and thus improves the growth quality of the crystal.

[0084] In some examples of this utility model, such as Figure 2 As shown, the crystal growth apparatus 100 may further include an induction coil 40, which is arranged around the heating device 30 along the circumference of the heating device 30.

[0085] In this configuration, an induction coil 40 is arranged around the heating device 30 along its circumference. The induction coil 40 can heat the heating device 30. By arranging the induction coil 40 around the heating device 30 along its circumference, the induction coil 40 can heat the heating device 30 uniformly in the circumference, so that the crucible assembly 10 is heated uniformly in the circumference, which is beneficial to the uniform growth of the crystal and thus further improves the growth quality of the crystal.

[0086] In some examples of this utility model, such as Figure 2 As shown, the insulation layer 5 may include: an upper insulation layer 52, and an upper lifting shaft 4 passing through the upper insulation layer 52.

[0087] The upper lifting shaft 4 passes through the upper insulation layer 52. Furthermore, the shaft body 41 passes through the upper insulation layer 52. This arrangement allows the shaft body 41 to extend outside the insulation layer 5, which facilitates driving the seed crystal fixed on the bearing drag 42 by driving the shaft body 41, thereby achieving the effect of the seed crystal contacting the solution 20 to grow crystal or separating from the solution 20 after crystal growth.

[0088] In some examples of this utility model, such as Figure 2 As shown, the crystal growth apparatus 100 may further include: a support rod 50, and the insulation layer 5 includes: a lower insulation layer 53, with the support rod 50 passing through the lower insulation layer 53 and fixed to the crucible body 1.

[0089] The support rod 50 can be, but is not limited to, a graphite shaft, etc. The support rod 50 passes through the lower insulation layer 53 and is fixed to the crucible body 1. For example, the support rod 50 and the crucible body 1 can be fixedly connected by, but is not limited to, integral molding, snap-fit, etc. By making the support rod 50 pass through the lower insulation layer 53 and fixed to the crucible body 1, the crucible body 1 can be driven by driving the support rod 50, thereby driving the crucible assembly 10 to move as a whole. For example, by driving the support rod 50 to rotate, the crucible body 1 can be driven to rotate, thereby driving the crucible assembly 10 to rotate as a whole. Furthermore, by driving the shaft 41 to rotate, the bearing member and the seed crystal fixed to the bearing member can be driven to rotate, thereby achieving the effect of the crucible assembly 10 and the seed crystal rotating in opposite directions, thus enabling the crystal to grow smoothly.

[0090] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0091] In the description of this utility model, "first feature" and "second feature" may include one or more of the features.

[0092] In the description of this utility model, "multiple" means two or more.

[0093] In the description of this utility model, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or it may include the first and second features not being in direct contact but being in contact through another feature between them.

[0094] In the description of this utility model, the terms "above", "over" and "on top" for the first feature and the second feature include the first feature being directly above or diagonally above the second feature, or simply indicate that the first feature is at a higher horizontal level than the second feature.

[0095] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0096] Although embodiments of the present invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A crucible assembly for a crystal growth apparatus, characterized in that, include: The crucible body and the crucible lid are arranged in a vertical direction, with the crucible lid located above the crucible body. The crucible body defines a mounting groove that opens toward the crucible lid, and the crucible lid is placed over the open end of the mounting groove and fixed to the crucible body. A flow guiding structure is located below the crucible cover, at least a portion of which is disposed within the mounting groove. The flow guiding structure is fixed to the groove sidewall of the crucible body. The flow guiding structure and the crucible body together define a receiving cavity adapted to contain a solution for crystal growth. Both the crucible cover and the flow guiding structure are configured to allow the upper lifting shaft of the crystal growth apparatus to pass through. The flow guiding structure is also configured to suppress the evaporation loss of the corresponding solute when the solution in the receiving cavity evaporates to grow the crystal.

2. The crucible assembly for a crystal growth apparatus according to claim 1, characterized in that, The flow guiding structure includes: a first flow guiding wall, which is annular and extends circumferentially along the crucible body. The lower end of the first flow guiding wall is fixed to the side wall of the groove, and the first flow guiding wall is inclined away from the side wall of the groove from the crucible body to the crucible cover.

3. The crucible assembly for a crystal growth apparatus according to claim 2, characterized in that, The first guide wall and the sidewall of the channel form an angle, and the angle of the angle is adjustable. And / or, a first space is formed between the first guide wall and the side wall of the tank, and the first space is arranged around the first guide wall along the circumference of the crucible body; And / or, the crucible lid contacts at least one of the upper end face of the tank sidewall and the upper end face of the first guide wall.

4. The crucible assembly for a crystal growth apparatus according to claim 2, characterized in that, The flow guide structure further includes: a second flow guide wall, wherein the upper end of the first flow guide wall has a first opening, the second flow guide wall covers the first opening and is fixed to the first flow guide wall, and the second flow guide wall is used for the upper lifting shaft to pass through.

5. The crucible assembly for a crystal growth apparatus according to claim 4, characterized in that, The second guide wall is located above the first guide wall and is in contact with the upper end surface of the first guide wall; And / or, the second guide wall is formed with a first through hole for the upper lifting shaft to pass through; And / or, at least a portion of the second flow guide wall is located inside the crucible lid.

6. The crucible assembly for a crystal growth apparatus according to any one of claims 2-5, characterized in that, The crucible lid defines a second space.

7. The crucible assembly for a crystal growth apparatus according to claim 6, characterized in that, The crucible lid includes: a first end wall, a peripheral wall, and a second end wall. The first end wall and the second end wall are opposite to each other and spaced apart in the vertical direction. The first end wall is located below the second end wall and contacts at least one of the upper end surface of the groove side wall and the upper end surface of the first guide wall. The peripheral wall is disposed along the circumferential edge of the first end wall and the circumferential edge of the second end wall, so that the first end wall, the peripheral wall, and the second end wall together define the second space.

8. The crucible assembly for a crystal growth apparatus according to claim 7, characterized in that, The first cover end wall has a second through hole, and the second cover end wall has a third through hole. The second through hole and the third through hole are opposite each other in the vertical direction. Both the second through hole and the third through hole are used for the upper lifting shaft to pass through. The crucible lid further includes an annular retaining edge, which is disposed on the surface of the second lid end wall facing the first lid end wall, and the annular retaining edge is arranged around the third through hole along the circumference of the third through hole.

9. A crystal growth apparatus, characterized in that, include: A heating device having a heating cavity; A crucible assembly, wherein the crucible assembly is assembled within the heating chamber, and the crucible assembly is the crucible assembly according to any one of claims 1-8; The upper lifting shaft extends in the vertical direction and passes through the crucible cover and the flow guide structure to extend into the receiving cavity. The upper lifting shaft is suitable for carrying the seed crystal.

10. The crystal growth apparatus according to claim 9, characterized in that, The upper lifting shaft includes a shaft body and a support drag for carrying the seed crystal. The support drag is fixed at the lower end of the shaft body. The support drag is located in the receiving cavity. The shaft body passes through the crucible cover and the flow guide structure. And / or, further comprising: an induction coil disposed around the heating device circumferentially; And / or, the heating device includes: an insulation layer and a heating element, the insulation layer defining the heating cavity, and the heating element disposed within the heating cavity.

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