Integrated high-efficiency gallium nitride power amplifier

Abstract

This utility model discloses an integrated high-efficiency gallium nitride (GaN) power amplifier, including a power supply module, a main control module, a Bluetooth module, a GaN power amplifier chip module, and a filtering module. The power supply module is connected to a power source. The main control module is connected to the power supply module. The Bluetooth module is connected to both the power supply module and the main control module for connecting to a mobile terminal. The GaN power amplifier chip module is connected to both the power supply module and the main control module for amplifying the signal sent from the main control module. The filtering module is connected to the GaN power amplifier chip module and connected to a speaker for filtering the signal output by the GaN power amplifier chip module. By using a chip module that integrates GaN power devices, drive circuits, control circuits, and protection circuits, the amplifier design is simplified, the number and cost of external components are reduced, and the stability and reliability of the system are improved.

Description

Technical Field

[0001] This utility model relates to the field of audio technology, and in particular to an integrated high-efficiency gallium nitride power amplifier. Background Technology

[0002] Traditional audio power amplifiers, especially Class D amplifiers, primarily use silicon MOSFETs as switching transistors. However, silicon MOSFETs suffer from high switching losses, limited bandwidth, thermal limitations, and gate drive limitations. These issues restrict the amplifier's efficiency and output power, and increase distortion and size. Meanwhile, some discrete gallium nitride (GaN) power amplifiers, due to their high frequencies, have stringent requirements for the output loop. Poorly designed circuit boards can easily burn out components, making the debugging of discrete GaN power amplifiers quite difficult. Therefore, there is an urgent need for a new type of power amplifier that can overcome these limitations and provide higher efficiency, higher output power, and lower distortion. Utility Model Content

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes an integrated high-efficiency gallium nitride power amplifier.

[0004] The technical solution adopted by one embodiment of this utility model to solve its technical problem is: an integrated high-efficiency gallium nitride power amplifier, including a power supply module, a main control module, a Bluetooth module, a gallium nitride power amplifier chip module, and a filtering module.

[0005] The power module is connected to the power supply;

[0006] The main control module is connected to the power supply module;

[0007] The Bluetooth module is connected to both the power module and the main control module to connect to the mobile terminal.

[0008] The gallium nitride power amplifier chip module is connected to the power module and the main control module respectively, and is used to amplify the signal sent from the main control module;

[0009] The filtering module is connected to the gallium nitride power amplifier chip module and connected to the speaker, and is used to filter the signal output by the gallium nitride power amplifier chip module.

[0010] As one of the preferred embodiments of this utility model, the gallium nitride power amplifier chip module includes a gallium nitride power amplifier chip U2.

[0011] As one of the preferred embodiments of this utility model, an integrated high-efficiency gallium nitride power amplifier also includes a temperature detection module connected to the gallium nitride power amplifier chip U2, for detecting the temperature of the gallium nitride power amplifier chip U2.

[0012] As one of the preferred embodiments of this utility model, the temperature detection module includes a thermistor RT2, a resistor R16 and a resistor R20. One end of the thermistor RT2 is connected to the NTC pin of the gallium nitride power amplifier chip U2, one end of the resistor R16 and one end of the resistor R20. The other end of the thermistor RT2 is connected to the other end of the resistor R16 and the ground terminal. The other end of the resistor R20 is connected to the VREG_AVDD pin of the gallium nitride power amplifier chip U2.

[0013] As one of the preferred embodiments of this utility model, the filtering module includes inductor L1, inductor L5, capacitor C5, capacitor C10, capacitor C15, capacitor C25, and resistors R9-R10. One end of inductor L1 and one end of inductor L5 are connected to the gallium nitride power amplifier chip module. The other end of inductor L1 is connected to one end of capacitor C5, one end of capacitor C10, and one end of the speaker, respectively. The other end of inductor L5 is connected to one end of capacitor C15, one end of capacitor C25, and the other end of the speaker, respectively. The other end of capacitor C5 is connected to the other end of capacitor C15, one end of resistor R9, one end of resistor R10, and the ground terminal, respectively. The other end of resistor R9 is connected to the other end of capacitor C10, and the other end of resistor R10 is connected to the other end of capacitor C25.

[0014] The beneficial effects of this utility model are as follows: An integrated high-efficiency gallium nitride (GaN) power amplifier includes a power supply module, a main control module, a Bluetooth module, a GaN power amplifier chip module, and a filter module. The power supply module is connected to a power source. The main control module is connected to the power supply module. The Bluetooth module is connected to both the power supply module and the main control module for connecting to a mobile terminal. The GaN power amplifier chip module is connected to both the power supply module and the main control module for amplifying the signal sent from the main control module. The filter module is connected to the GaN power amplifier chip module and connected to a speaker for filtering the signal output from the GaN power amplifier chip module. By using a chip module that integrates GaN power devices, drive circuits, control circuits, and protection circuits, the amplifier design is simplified, the number and cost of external components are reduced, and the stability and reliability of the system are improved. Attached Figure Description

[0015] The above and / or additional aspects and advantages of this utility model will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0016] Figure 1 This is a block diagram of an integrated high-efficiency gallium nitride power amplifier.

[0017] Figure 2 This is a partial circuit schematic of an integrated high-efficiency gallium nitride power amplifier.

[0018] Figure 3 This is the circuit schematic of a gallium nitride power amplifier chip module;

[0019] Figure 4 This is the circuit schematic of the filter module;

[0020] Figure 5 This is the circuit schematic of the temperature detection module. Detailed Implementation

[0021] This section will describe in detail the specific embodiments of the present utility model. The preferred embodiments of the present utility model are shown in the accompanying drawings. The purpose of the drawings is to supplement the textual description with graphics, so that people can intuitively and vividly understand each technical feature and the overall technical solution of the present utility model, but they should not be construed as limiting the scope of protection of the present utility model.

[0022] In the description of this utility model, "multiple" means two or more; "greater than," "less than," and "exceeding" are understood to exclude the stated number; "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly specifying the number of indicated technical features or their sequential relationship.

[0023] In the description of this utility model, it should be understood that the directional descriptions, such as up, down, front, back, left, right, etc., indicate the directional or positional relationship based on the directional or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0024] In this utility model, unless otherwise explicitly defined, the terms "setting," "installing," and "connecting" should be interpreted broadly. For example, they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to a fixed connection, a detachable connection, or an integral molding; they can refer to a mechanical connection; they can refer to the internal connection of two components or the interaction between two components. Those skilled in the art can reasonably determine the specific meaning of the above terms in this utility model in conjunction with the specific content of the technical solution.

[0025] Reference Figures 1 to 5 An integrated high-efficiency gallium nitride power amplifier.

[0026] It includes a power module 10, a main control module 20, a Bluetooth module 30, a gallium nitride power amplifier chip module 40, and a filter module 50;

[0027] Power module 10 is connected to a power source;

[0028] The main control module 20 is connected to the power supply module 10;

[0029] Bluetooth module 30 is connected to power module 10 and main control module 20 respectively, and is used to connect to mobile terminal;

[0030] The gallium nitride power amplifier chip module 40 is connected to the power supply module 10 and the main control module 20 respectively, and is used to amplify the signal sent from the main control module 20;

[0031] The filtering module 50 is connected to the gallium nitride power amplifier chip module 40 and connected to a speaker, and is used to filter the signal output by the gallium nitride power amplifier chip module 40.

[0032] In this invention, the main control module 20 includes a main control chip U1, which is an MCU + Bluetooth chip. It can act as an MCU to control and operate the power amplifier, and also as an audio input device. The main control chip U1 integrates a Bluetooth receiver, which can receive music signals sent by mobile phones, TVs, etc. via Bluetooth. It can also receive analog audio such as MP3 through terminal CN2. When the analog audio source of MP3 is plugged into terminal CN2, it is coupled into the main control chip U1 through capacitors C4 and C7. The main control chip U1 performs ADC digital-to-analog conversion to convert the analog audio signal into an IIS digital signal. In some embodiments, the gallium nitride power amplifier chip module 40 includes a gallium nitride power amplifier chip U2. It should be noted that the gallium nitride power amplifier chip U2 can adopt existing technology, which will not be described in detail here, nor should it be considered as a limitation of this invention. The digital signal after analog-to-digital conversion is transmitted to the gallium nitride power amplifier chip U2 by pins 3, 4, and 5 of the main control chip U1 for amplification, and finally output to the speaker for playback.

[0033] The gallium nitride (GaN) power amplifier chip U2 has an internal overcurrent detection circuit to prevent damage to the internal GaN chip from excessive current. The GaN power amplifier chip U2 also has a PVDD overvoltage detection circuit to prevent damage from exceeding the GaN's withstand voltage. (Refer to...) Figure 1 , Figure 2 and Figure 5In some embodiments, an integrated high-efficiency gallium nitride (GaN) power amplifier further includes a temperature detection module 60 connected to the GaN power amplifier chip U2 for detecting the temperature of the GaN power amplifier chip U2. As a preferred embodiment of the temperature detection module 60, the temperature detection module 60 includes a thermistor RT2, a resistor R16, and a resistor R20. One end of the thermistor RT2 is connected to the NTC pin of the GaN power amplifier chip U2, one end of resistor R16, and one end of resistor R20. The other end of the thermistor RT2... One end is connected to the other end of resistor R16 and the ground terminal. The other end of resistor R20 is connected to the VREG_AVDD pin of the gallium nitride power amplifier chip U2. Thermistor RT2 is placed close to the gallium nitride power amplifier chip U2. When the temperature is too high, the resistance of thermistor RT2 reaches the start-up control voltage of the gallium nitride power amplifier chip U2. After pin 12 of the gallium nitride power amplifier chip U2 detects the start-up control voltage, pins 27 and 35 of the gallium nitride power amplifier chip U2 shut down the output to protect the gallium nitride power amplifier chip U2 from damage.

[0034] Furthermore, a filter module 50 is provided between pins 27 and 35 of the gallium nitride power amplifier chip U2 and the speaker. In a preferred embodiment, the filter module 50 includes inductors L1 and L5, capacitors C5, C10, C15, and C25, and resistors R9-R10. One end of inductor L1 and one end of inductor L5 are connected to the gallium nitride power amplifier chip module 40. The other end of inductor L1 is connected to one end of capacitor C5, one end of capacitor C10, and one end of the speaker, respectively. The other end of L5 is connected to one end of capacitor C15, one end of capacitor C25, and the other end of the speaker. The other end of capacitor C5 is connected to the other end of capacitor C15, one end of resistor R9, one end of resistor R10, and the ground terminal. The other end of resistor R9 is connected to the other end of capacitor C10, and the other end of resistor R10 is connected to the other end of capacitor C25. Specifically, the audio signal output by gallium nitride power amplifier chip U2 is digitally filtered by inductors L1 and L5 to obtain a pure audio signal, which is then output to the speaker through the CN 1 socket.

[0035] The MCU controls the gallium nitride power amplifier chip module 40, including power on / off, mute, and volume control. The gallium nitride power amplifier chip module 40 sends real-time temperature and real-time current to the MCU. For example, when the temperature is about to reach the starting control point, the MCU reduces the output power to reduce heat generation and prevent the temperature from rising further. At the same time, it avoids the user from losing sound due to sudden protection while listening to music, so that the user will not experience any interruptions while listening to music.

[0036] The advantages of this invention are: by using a chip module that integrates gallium nitride power devices, drive circuits, control circuits and protection circuits, the amplifier design is simplified, the number and cost of external components are reduced, and the stability and reliability of the system are improved.

[0037] Of course, this utility model is not limited to the above-described embodiments. Those skilled in the art can make equivalent modifications or substitutions without departing from the spirit of this utility model. All such equivalent modifications and substitutions are included within the scope defined by the claims of this application.

Claims

1. An integrated high-efficiency gallium nitride power amplifier, characterized in that: It includes a power module (10), a main control module (20), a Bluetooth module (30), a gallium nitride power amplifier chip module (40), and a filter module (50); The power module (10) is connected to a power source; The main control module (20) is connected to the power supply module (10); The Bluetooth module (30) is connected to the power module (10) and the main control module (20) respectively, and is used to connect to the mobile terminal; The gallium nitride power amplifier chip module (40) is connected to the power supply module (10) and the main control module (20) respectively, and is used to amplify the signal sent by the main control module (20); The filtering module (50) is connected to the gallium nitride power amplifier chip module (40) and connected to a speaker, and is used to filter the signal output by the gallium nitride power amplifier chip module (40).

2. The integrated high-efficiency gallium nitride power amplifier according to claim 1, characterized in that: The gallium nitride power amplifier chip module (40) includes a gallium nitride power amplifier chip U2.

3. The integrated high-efficiency gallium nitride power amplifier according to claim 2, characterized in that: It also includes a temperature detection module (60) connected to the gallium nitride power amplifier chip U2, used to detect the temperature of the gallium nitride power amplifier chip U2.

4. The integrated high-efficiency gallium nitride power amplifier according to claim 3, characterized in that: The temperature detection module (60) includes a thermistor RT2, a resistor R16, and a resistor R20. One end of the thermistor RT2 is connected to the NTC pin of the gallium nitride power amplifier chip U2, one end of the resistor R16, and one end of the resistor R20. The other end of the thermistor RT2 is connected to the other end of the resistor R16 and the ground terminal. The other end of the resistor R20 is connected to the VREG_AVDD pin of the gallium nitride power amplifier chip U2.

5. An integrated high-efficiency gallium nitride power amplifier according to claim 1, characterized in that: The filtering module (50) includes inductor L1, inductor L5, capacitor C5, capacitor C10, capacitor C15, capacitor C25 and resistors R9-R10. One end of inductor L1 and one end of inductor L5 are connected to the gallium nitride power amplifier chip module (40). The other end of inductor L1 is connected to one end of capacitor C5, one end of capacitor C10 and one end of speaker respectively. The other end of inductor L5 is connected to one end of capacitor C15, one end of capacitor C25 and the other end of speaker respectively. The other end of capacitor C5 is connected to the other end of capacitor C15, one end of resistor R9, one end of resistor R10 and ground terminal respectively. The other end of resistor R9 is connected to the other end of capacitor C10 and the other end of resistor R10 is connected to the other end of capacitor C25.

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