A back contact cell and photovoltaic module

By setting first and second doped semiconductor sections on the semiconductor substrate of the back contact battery, and combining the transparent conductive layer and insulating trench design, the carrier collection and transport path is optimized, solving the problem of low carrier collection efficiency at the edge of the back contact battery, and improving the photoelectric conversion efficiency and manufacturing efficiency of the battery.

CN224319787UActive Publication Date: 2026-06-02JIANGSU LONGJI LEYE PHOTOVOLTAIC TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
JIANGSU LONGJI LEYE PHOTOVOLTAIC TECH CO LTD
Filing Date
2025-04-23
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In existing back-contact batteries, the carrier collection efficiency of the edge portion located on the back side is relatively low, which affects the working efficiency of the back-contact battery.

Method used

A first doped semiconductor section and a second doped semiconductor section are disposed on the semiconductor substrate of the back contact battery. The first doped semiconductor section is continuously distributed in the edge region and forms a field passivation structure with the second doped semiconductor section. Combined with the transparent conductive layer and insulating trench design, the carrier collection and transport path is optimized.

Benefits of technology

It improves the efficiency of carrier shunting and collection, reduces the carrier recombination rate, enhances the photoelectric conversion efficiency and manufacturing efficiency of back contact cells, and reduces the risk of leakage and hot spots.

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    Figure CN224319787U_ABST
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Abstract

The utility model discloses a back contact battery and photovoltaic module relates to photovoltaic technical field. To improve the carrier collection efficiency of the edge part of back contact battery located at the back light side, improve the conversion efficiency of back contact battery. Back contact battery includes semiconductor base, first doped semiconductor part and second doped semiconductor part. The first surface includes edge area and the middle part area in the inside of edge area. The middle part area includes first subarea, second subarea and third subarea. First subarea and second subarea are along first direction alternately interval distribution, and third subarea is at least located between first subarea and second subarea and between second subarea and edge area. First doped semiconductor part is arranged in or on first subarea and the edge area of both sides along first direction and both sides along second direction of first subarea. Second doped semiconductor part is at least arranged in or on second subarea. First direction is perpendicular to second direction.
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