Display device

Abstract

A display device includes: a substrate; light-emitting devices, on the substrate and including a first light-emitting device, a second light-emitting device, and a third light-emitting device configured to emit light of different colors from each other; an auxiliary light-emitting device, on the substrate and spaced apart from the light-emitting devices; a light-receiving device, on the substrate and including a first light-receiving device and a second light-receiving device, the first light-receiving device being configured to absorb light in the visible light band and the second light-receiving device being configured to absorb light in the infrared band; a thin-film encapsulation layer on the light-emitting device, the auxiliary light-emitting device, and the light-receiving device; a light-blocking layer, on the thin-film encapsulation layer and including a plurality of openings respectively corresponding to the light-emitting device, the auxiliary light-emitting device, and the light-receiving device; and a wavelength conversion pattern on the light-blocking layer, wherein the wavelength conversion pattern includes infrared quantum dots configured to convert light in the visible light band into light in the infrared band.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0075286, filed on June 10, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a display device, and more specifically, to the structure of a display device. Background Technology

[0004] Generally, display devices include light-emitting devices (such as organic light-emitting diodes) and thin-film transistors on a substrate, and operate by causing the light-emitting devices to emit light.

[0005] For example, each pixel of a display device has a light-emitting device (such as an organic light-emitting diode), wherein an intermediate layer, including an emitting layer, is disposed between the pixel electrode and the counter electrode. In a display device, the emission of light or the degree of light emission of each pixel can generally be controlled by a thin-film transistor electrically connected to the pixel electrode. Some layers included in the intermediate layer of the light-emitting device may be provided commonly for multiple light-emitting devices.

[0006] The information disclosed in this Background section is only intended to enhance the understanding of the background art, and therefore the information discussed in this Background section does not necessarily constitute prior art. Utility Model Content

[0007] Some embodiments include display devices capable of performing complex sensing, such as fingerprint sensing, biometric information sensing, and touch sensing. However, the disclosed embodiments are merely examples, and the scope of embodiments according to this disclosure is not limited thereto.

[0008] Additional aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the embodiments of this disclosure presented.

[0009] According to some embodiments, a display device includes: a substrate; light-emitting devices on the substrate and including a first light-emitting device, a second light-emitting device, and a third light-emitting device, the first to third light-emitting devices being configured to emit light of different colors from each other; an auxiliary light-emitting device on the substrate and separate from the light-emitting devices; a light-receiving device on the substrate and including a first light-receiving device and a second light-receiving device, the first light-receiving device being configured to absorb light in the visible light band, and the second light-receiving device being configured to absorb light in the infrared band; a thin-film encapsulation layer on the light-emitting device, the auxiliary light-emitting device, and the light-receiving device; a light-blocking layer on the thin-film encapsulation layer, the light-blocking layer including a plurality of openings respectively corresponding to the light-emitting device, the auxiliary light-emitting device, and the light-receiving device; and a wavelength conversion pattern on the light-blocking layer, wherein the wavelength conversion pattern includes infrared quantum dots, the infrared quantum dots being configured to convert light in the visible light band into light in the infrared band.

[0010] According to some embodiments, the emitting layer included in the auxiliary light-emitting device can be configured to emit light of the same color as the light emitted from one of the first light-emitting device, the second light-emitting device, and the third light-emitting device.

[0011] According to some embodiments, the first light-emitting device may also be configured to emit light in a wavelength range of about 495 nm to about 580 nm, the second light-emitting device may also be configured to emit light in a wavelength range of about 380 nm to about 495 nm, and the third light-emitting device may also be configured to emit light in a wavelength range of about 580 nm to about 780 nm.

[0012] According to some embodiments, the emitting layer included in the auxiliary light-emitting device may also be configured to emit light in a wavelength range of approximately 380 nm to approximately 495 nm.

[0013] According to some embodiments, the first optical receiving device may also be configured to absorb light in a wavelength range of about 380 nm to about 780 nm, and the second optical receiving device may also be configured to absorb light in a wavelength range of about 750 nm to about 1500 nm.

[0014] According to some embodiments, in a plan view, the emission area of ​​the auxiliary light-emitting device may be smaller than the emission area of ​​each of the first light-emitting device, the second light-emitting device, and the third light-emitting device.

[0015] According to some embodiments, in a plan view, the auxiliary light-emitting device and the second light-receiving device can be arranged adjacent to each other.

[0016] According to some embodiments, in a plan view, an auxiliary light-emitting device can be arranged between two second light-emitting devices arranged adjacent to each other.

[0017] According to some embodiments, in a plan view, the second light receiving device can be arranged between the second light emitting device and the auxiliary light emitting device.

[0018] According to some embodiments, in a plan view, a second light receiving device may be arranged between two auxiliary light-emitting devices arranged adjacent to each other.

[0019] According to some embodiments, the display device may further include a color filter layer on a light blocking layer and a wavelength conversion pattern, wherein the color filter layer may include a first color filter corresponding to a first light-emitting device, a second color filter corresponding to a second light-emitting device, and a third color filter corresponding to a third light-emitting device.

[0020] According to some embodiments, the display device may further include a transparent organic film layer disposed in an opening corresponding to the second light receiving device among a plurality of openings in the light blocking layer.

[0021] According to some embodiments, the display device may further include: a first sensing color filter disposed in an opening corresponding to a first light receiving device among a plurality of openings in the light blocking layer; and a second sensing color filter disposed in an opening corresponding to a second light receiving device among a plurality of openings in the light blocking layer.

[0022] According to some embodiments, the material of the first sensing color filter may be the same as that of the first color filter, and the first light-emitting device is also configured to emit green light.

[0023] According to some embodiments, the material of the second sensing color filter may be the same as that of the third color filter, and the third light-emitting device is also configured to emit red light.

[0024] According to some embodiments, the wavelength conversion pattern can be arranged in the openings of the light-blocking layer that correspond to the auxiliary light-emitting device.

[0025] According to some embodiments, the display device may further include an auxiliary color filter on a wavelength conversion pattern, wherein the material of the auxiliary color filter may be the same as that of the third color filter, and the third light-emitting device is further configured to emit red light.

[0026] According to some embodiments, the wavelength conversion pattern can be on the upper surface of the light-blocking layer.

[0027] According to some embodiments, the display device may further include a fourth color filter disposed in an opening of a plurality of openings in the light-blocking layer corresponding to an auxiliary light-emitting device, wherein the material of the fourth color filter may be the same as that of the second color filter, and the second light-emitting device is further configured to emit blue light.

[0028] According to some embodiments, the display device may further include an auxiliary color filter on top of a fourth color filter, wherein the material of the auxiliary color filter may be the same as that of the third color filter, and the third light-emitting device is further configured to emit red light.

[0029] According to some embodiments, the wavelength conversion pattern can be on the light-blocking layer at the opening corresponding to the auxiliary light-emitting device among a plurality of openings surrounding the light-blocking layer.

[0030] According to some embodiments, the wavelength conversion pattern can be on the light blocking layer at the opening corresponding to the second light receiving device among a plurality of openings surrounding the light blocking layer. Attached Figure Description

[0031] The above and other aspects, features, and characteristics of specific embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0032] Figure 1 This is a schematic plan view of a portion of a display device according to some embodiments;

[0033] Figure 2 It is along Figure 1 A schematic cross-sectional view of the display device taken by line I-I';

[0034] Figure 3 This is a schematic cross-sectional view of the display panel of a display device according to some embodiments;

[0035] Figure 4A and Figure 4B These are schematic cross-sectional views of a display device according to some embodiments;

[0036] Figure 5 This is an equivalent circuit diagram of a pixel circuit of a light-emitting device electrically connected to a display device and a sensor circuit of a light-receiving device electrically connected to a display device, according to some embodiments.

[0037] Figure 6 The corresponding display device according to some embodiments Figure 1 An enlarged schematic plan view of part A of the area;

[0038] Figure 7 It is along Figure 6 A schematic cross-sectional view of the display device taken from line II-II';

[0039] Figure 8 This is a schematic cross-sectional view of a portion of a display device according to some embodiments;

[0040] Figure 9 This is a schematic cross-sectional view of a portion of a display device according to some embodiments;

[0041] Figure 10 This is a schematic plan view of a portion of a display device according to some embodiments;

[0042] Figure 11 This is a schematic cross-sectional view of a portion of a display device according to some embodiments;

[0043] Figure 12 This is a schematic plan view of a portion of a display device according to some embodiments; and

[0044] Figure 13 This is a schematic cross-sectional view of a portion of a display device according to some embodiments. Detailed Implementation

[0045] Reference will now be made in more detail to aspects of some embodiments, examples of which are illustrated in the accompanying drawings, in which the same reference numerals refer to the same elements throughout. In this respect, the presented embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to illustrate aspects of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or any combination of a, b, and c.

[0046] Because this disclosure allows for various variations and numerous embodiments, specific embodiments will be shown in the accompanying drawings and described in more detail in the written description. The features and characteristics of this disclosure, as well as methods of implementing them, will become apparent from the embodiments and drawings described below in more detail. However, this disclosure can be implemented in various forms and is not limited to the embodiments presented below.

[0047] In the following description, aspects of some embodiments will be described in more detail with reference to the accompanying drawings, in which the same or corresponding elements are indicated by the same reference numerals and redundant descriptions thereof are omitted.

[0048] In the following embodiments, although terms such as “first” and “second” are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one element from another.

[0049] In the following embodiments, unless the meaning is clearly different in the context, the singular usage covers the plural usage.

[0050] In the following embodiments, terms such as “comprising,” “including,” and “having” indicate the presence of the stated features or elements, but do not exclude the presence or addition of one or more other features or elements.

[0051] In the following embodiments, when a layer, area, or element is referred to as being "on" another layer, area, or element, the layer, area, or element may be directly or indirectly on the other layer, area, or element. That is, for example, intermediary layers, intermediary areas, or intermediary elements may exist.

[0052] For ease of description, the sizes of elements in the accompanying drawings may be exaggerated or reduced. For example, because the sizes and thicknesses of elements in the drawings are arbitrarily shown for ease of description, the embodiments are not limited thereto.

[0053] When embodiments can be implemented differently, the sequence of characteristic processes can be performed in a different order than that described. For example, two consecutively described processes can be performed substantially simultaneously, or they can be performed in the reverse order of being described.

[0054] In the following embodiments, when a layer, area, or element is referred to as being "connected to" another layer, area, or element, the layer, area, or element may be directly or indirectly connected to the other layer, area, or element. That is, for example, intermediary layers, intermediary areas, or intermediary elements may exist. For example, when a layer, area, or element is referred to as being "electrically connected to" another layer, area, or element, the layer, area, or element may be directly or indirectly electrically connected to the other layer, area, or element. That is, for example, intermediary layers, intermediary areas, or intermediary elements may exist.

[0055] Figure 1 This is a schematic plan view of a portion of a display device 1 according to some embodiments.

[0056] refer to Figure 1 The display device 1 may include a display area DA and a peripheral area NDA outside the display area DA. A plurality of pixels P, including display elements, may be arranged in the display area DA, and the display device 1 can display an image by using light emitted from the plurality of pixels P arranged in the display area DA. The peripheral area NDA may be a non-display area in which no display elements are arranged, and the display area DA may be completely surrounded by the peripheral area NDA. That is, according to some embodiments, the peripheral area NDA may surround the display area DA (e.g., at the periphery of the display area DA or outside the occupied area of ​​the display area DA).

[0057] Figure 1 The display device 1 shown has a flat display surface, but embodiments of this disclosure are not limited thereto. According to some embodiments, the display device 1 may include a three-dimensional display surface or a curved display surface.

[0058] When the display device 1 includes a three-dimensional display surface, the display device 1 may include multiple display areas pointing in different directions to each other, and may include a display surface in the shape of, for example, a polygonal column. According to some embodiments, when the display device 1 includes a curved display surface, the display device 1 may be implemented in various forms (such as a flexible display device, a foldable display device, and a rollable display device).

[0059] Furthermore, according to some embodiments, Figure 1 The display device 1 shown can be applied to mobile phone terminals. According to some embodiments, an electronic module, a camera module, and a power module mounted on a motherboard can be arranged together with the display device 1 in a bracket / housing to form a mobile phone terminal. The display device 1 according to this disclosure can be applied to large electronic devices (such as televisions and monitors) and small to medium-sized electronic devices (such as tablet computers, vehicle navigation systems, game consoles, and smartwatches).

[0060] Figure 1 The display area DA of the display device 1 shown has a quadrilateral shape with rounded corners. However, according to some embodiments, the display area DA may have a circular shape, an elliptical shape, an irregular shape, or other polygonal shapes (such as triangular or pentagonal shapes).

[0061] In the following description, organic light-emitting display devices are used as examples of display device 1 according to some embodiments, but the display device 1 of this disclosure is not limited thereto. According to some embodiments, the display device 1 of this disclosure may be an inorganic light-emitting display device (or an inorganic electroluminescent (EL) display device) or a quantum dot light-emitting display device. For example, the emitting layer of the display element included in the display device 1 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0062] Figure 2 It is along Figure 1 A schematic cross-sectional view of display device 1 taken by line I-I', and Figure 3 This is a schematic cross-sectional view of the display panel DP of the display device 1 according to some embodiments. Figure 2 and Figure 3 The stacking relationship between the functional panels and / or functional layers that form the display device 1 is illustrated in a simplified manner.

[0063] refer to Figure 2According to some embodiments, the display device 1 may include a display layer DU, an input sensing layer TU, an optical functional layer, a color filter component CU, and a cover window CW. At least some of the elements in the display layer DU, the input sensing layer TU, the color filter component CU, and the cover window CW may be formed by a continuous process, or at least some of the elements may be coupled to each other by an adhesive component AD. Figure 2 The adhesive component AD may include an optically clear adhesive (OCA). However, embodiments according to this disclosure are not limited thereto, and the adhesive component AD described below may include typical adhesives or adhesives. According to some embodiments, the cover window CW may be replaced by another element or omitted.

[0064] According to some embodiments, the input sensing layer TU may be located directly on the display layer DU. As used herein, the expression "element B is located directly on element A" means that no separate adhesive layer / adhesive material is disposed between element A and element B. After element A is formed, element B is formed on the substrate surface provided by element A through a continuous process.

[0065] According to some embodiments, a structure including a display layer DU, an input sensing layer TU, and a color filter component CU can be defined as a display panel DP. For example, as Figure 2 As shown, the adhesive component AD can be arranged between the display panel DP and the cover window CW.

[0066] The display layer DU can generate images, and the input sensing layer TU can obtain coordinate information of external inputs (e.g., touch events). Although not shown separately, the display panel DP according to some embodiments may also include a protective member located on the lower surface of the display layer DU. The protective member and the display layer DU may be coupled to each other by an adhesive member. According to some embodiments, an optical functional layer may be additionally located on the input sensing layer TU. The optical functional layer may relatively improve light efficiency. The optical functional layer may relatively improve the front light efficiency and / or side visibility of light emitted from a light-emitting device (e.g., an organic light-emitting diode).

[0067] According to some embodiments, the color filter component CU can be arranged between the input sensing layer TU and the overlay window CW. The color filter component CU can include components for each pixel P (see...). Figure 1 The emission area of ​​the pixel P is provided with a color filter and the non-emission area between the pixel P and the color filter is provided with a light blocking layer.

[0068] In the following text, see references Figure 3 The structure of the display layer DU, input sensing layer TU, and color filter component CU is described in more detail. (See reference) Figure 3 The display panel DP may include a display layer DU, an input sensing layer TU, and a color filter component CU.

[0069] The display layer DU may include a substrate 100 and a circuit layer CL, a light-emitting device (e.g., an organic light-emitting diode OLED), and a thin-film encapsulation layer TFE sequentially disposed on the substrate 100. The input sensing layer TU may be directly located on the thin-film encapsulation layer TFE. The thin-film encapsulation layer TFE may include at least one organic encapsulation layer 320 (see [link to documentation]). Figure 7 This allows for a flatter substrate surface. Consequently, the defect rate can be reduced even when the elements of the input sensing layer TU, which will be described below, are formed through a continuous process.

[0070] The input sensing layer TU can have a multi-layer structure. The input sensing layer TU may include touch electrodes, traces connected to the touch electrodes, and at least one touch insulating layer. The input sensing layer TU can sense external input using, for example, a capacitive method. The operating methods of the input sensing layer TU described herein are not limited. According to some embodiments, the input sensing layer TU can sense external input using electromagnetic induction or pressure sensing methods.

[0071] like Figure 3 As shown, the input sensing layer TU according to some embodiments may include a first conductive layer MTL1, a first inorganic insulating layer IL1, a second conductive layer MTL2, and a second inorganic insulating layer IL2. According to some embodiments, an additional insulating layer may be disposed between the first conductive layer MTL1 and the thin-film encapsulation layer TFE.

[0072] According to some embodiments, each of the first conductive layer MTL1 and the second conductive layer MTL2 may have a monolayer structure or a multilayer structure in which multiple layers are stacked. A conductive layer with a monolayer structure may include a metal layer or a transparent conductive layer. The metal layer may include molybdenum (Mo), silver (Ag), titanium (Ti), copper (Cu), aluminum (Al), and alloys thereof. The transparent conductive layer may include transparent conductive oxides (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO)). Furthermore, the transparent conductive layer may include conductive polymers (such as poly(3,4-ethylenedioxythiophene) (PEDOT)), metal nanowires, and graphene. A conductive layer with a multilayer structure may include multiple metal layers. The multiple metal layers may have a three-layer structure, for example, Ti / Al / Ti. A conductive layer with a multilayer structure may include at least one metal layer and at least one transparent conductive layer.

[0073] Each of the first conductive layer MTL1 and the second conductive layer MTL2 may include multiple patterns. Hereinafter, the first conductive layer MTL1 may be understood to include a first conductive pattern, and the second conductive layer MTL2 may be understood to include a second conductive pattern. The first and second conductive patterns may form a touch electrode. According to some embodiments, the touch electrode may have a grid shape to prevent or reduce its visibility to the user.

[0074] Each of the first inorganic insulating layer IL1 and the second inorganic insulating layer IL2 may have a single-layer structure or a multi-layer structure. Each of the first inorganic insulating layer IL1 and the second inorganic insulating layer IL2 may comprise an inorganic material or a composite material. For example, at least one of the first inorganic insulating layer IL1 and the second inorganic insulating layer IL2 may comprise an inorganic film. The inorganic film may comprise at least one of alumina, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and hafnium oxide. According to some embodiments, the first inorganic insulating layer IL1 and / or the second inorganic insulating layer IL2 may be replaced with an organic insulating layer.

[0075] According to some embodiments, such as Figure 3 As shown, the color filter component CU can be directly located on the input sensing layer TU. The color filter component CU can include a light blocking layer BM and a color filter layer CF on the light blocking layer BM. The light blocking layer BM can be a black matrix that at least partially absorbs externally reflected light or internally reflected light. The color filter layer CF can have a color corresponding to the light emitted from the emitting layer located below the color filter layer CF.

[0076] Figure 4A and Figure 4B These are schematic cross-sectional views of display device 1 according to some embodiments.

[0077] refer to Figure 4A and Figure 4B In addition to multiple pixels P (see Figure 1 In addition to the above, the display device 1 according to some embodiments may also include an optical sensor. Multiple pixels P (see...) Figure 1 Each of the following can include at least one of a first light-emitting device ED1, a second light-emitting device ED2, and a third light-emitting device ED3, and the optical sensor can include a first light-receiving device PD1 and a second light-receiving device PD2. The first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3 can emit light of different colors from each other. For example, the first light-emitting device ED1 can emit green light, the second light-emitting device ED2 can emit blue light, and the third light-emitting device ED3 can emit red light.

[0078] According to some embodiments, in addition to the first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3, the display device 1 may also include an auxiliary light-emitting device ED4. The emitting layer of the auxiliary light-emitting device ED4 can emit light of the same color as the light emitted from one of the first light-emitting devices ED1, ED2, and ED3. For example, the emitting layer of the auxiliary light-emitting device ED4 can emit blue light, the same blue light emitted from the second light-emitting device ED2. However, reference is made below... Figure 7 A more detailed description of the wavelength conversion pattern 400 can be located on the auxiliary light-emitting device ED4, and therefore, the emitting region of the auxiliary light-emitting device ED4 can emit light in the infrared band. According to some embodiments, the first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, and the auxiliary light-emitting device ED4 can be driven independently of each other.

[0079] like Figure 4A As shown, the display device 1 may have the function of sensing an object (e.g., a fingerprint of finger F) in contact with the cover window CW. At least a portion of the reflected light from at least one of the first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3, reflected by the user's fingerprint, can be re-intruded onto the first light-receiving device PD1, and therefore, the first light-receiving device PD1 can detect the reflected light. For example, green light emitted from the first light-emitting device ED1 can be reflected by an object in contact with the cover window CW and re-intruded onto the first light-receiving device PD1, and therefore, the first light-receiving device PD1 can detect the re-intruded green light.

[0080] In addition, such as Figure 4B As shown, the display device 1 can have the function of sensing biometric information or touch information of an object (e.g., a finger F) in contact with the cover window CW. For example, light emitted from at least one of the second light-emitting device ED2 and the auxiliary light-emitting device ED4 can be converted into light in the infrared band by a wavelength conversion pattern 400, which will be described later. Light in the infrared band has a longer wavelength and therefore can penetrate deeper into the object than light in the visible light band, thereby ensuring a wider variety of sensing information (such as biometric information). For example, light emitted from the auxiliary light-emitting device ED4 can be converted into light in the infrared band and then reflected by the object in contact with the cover window CW, and then incident again on the second light-receiving device PD2, and thus the second light-receiving device PD2 can detect the light in the infrared band. Therefore, an optical sensor including the second light-receiving device PD2 can sense biometric information or touch information including the user's oxygen saturation, pulse, and blood pressure.

[0081] Figure 5It is an electrical connection to display device 1 according to some embodiments (see Figure 1 The equivalent circuit diagram of the pixel circuit PC of the light-emitting device ED and the sensor circuit PC' of the light-receiving device PD electrically connected to the display device 1. Although Figure 5 Various components in the pixel circuit PC and sensor circuit PC' according to some embodiments are shown, but the embodiments according to this disclosure are not limited thereto, and the pixel circuit PC and sensor circuit PC' may include additional or fewer components according to various embodiments without departing from the spirit and scope of the embodiments according to this disclosure.

[0082] refer to Figure 5 Pixel P (see Figure 1 The optical sensor may include a light-emitting device ED and a pixel circuit PC that controls the amount of light emitted from the light-emitting device ED, and the optical sensor may include a light-receiving device PD and a sensor circuit PC' that controls the amount of light received by the light-receiving device PD.

[0083] Each pixel circuit PC can be connected to the scan start line GIL, scan control line GCL, first scan write line GWL1, second scan write line GWL2, emit line EML, and data line DL. Furthermore, each pixel circuit PC can be connected to a first drive voltage line VDDL through which a first drive voltage ELVDD is applied, a second drive voltage line VSSL through which a second drive voltage ELVSS is applied, a first initialization voltage line through which a first initialization voltage Vint1 is applied, and a second initialization voltage line through which a second initialization voltage Vint2 is applied.

[0084] Each sensor circuit PC' can be connected to the first scan write line GWL1, the reset line RSTL, and the fingerprint sensing line FRL. Furthermore, each sensor circuit PC' can be connected to the second drive voltage line VSSL through which the second drive voltage ELVSS is applied, the reset voltage line through which the reset voltage Vrst is applied, and the first initialization voltage line through which the first initialization voltage Vint1 is applied.

[0085] Each pixel circuit PC may include multiple transistors and at least one capacitor and may be connected to a light-emitting device ED. The multiple transistors may include a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, and a seventh transistor T7. Among the multiple transistors, the first transistor T1 may be a driving transistor, and the second transistors T2 through T7 may be transistors used as switching devices to be turned on or off according to a scan signal applied to the respective gate electrode of the transistor.

[0086] The first transistor T1 may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the first transistor T1 may be connected to the first electrode of the third transistor T3 and an electrode of the storage capacitor Cst. The first electrode of the first transistor T1 may be connected to the second electrode of the second transistor T2 and the second electrode of the fifth transistor T5. The second electrode of the first transistor T1 may be connected to the second electrode of the third transistor T3 and the first electrode of the sixth transistor T6.

[0087] A light-emitting device (ED) can emit light according to a driving current. The amount of light emitted from the ED can be proportional to the driving current. The ED can be an organic light-emitting diode (OLED) comprising a pixel electrode, a counter electrode, and an organic emitting layer disposed between the pixel electrode and the counter electrode. Optionally, the ED can be an inorganic light-emitting diode comprising an inorganic emitting layer disposed between the pixel electrode and the counter electrode, or a quantum dot light-emitting diode comprising a quantum dot emitting layer disposed between the pixel electrode and the counter electrode. Furthermore, the ED can be a miniature light-emitting diode. The pixel electrode of the ED can be connected to the second electrode of the sixth transistor T6 and the second electrode of the seventh transistor T7, and the counter electrode of the ED can be connected to the second driving voltage line VSSL.

[0088] The second transistor T2 can be turned on by the scan signal of the first scan write line GWL1 to connect the first electrode of the first transistor T1 and the data line DL to each other. The gate electrode of the second transistor T2 can be connected to the first scan write line GWL1, the first electrode of the second transistor T2 can be connected to the data line DL, and the second electrode of the second transistor T2 can be connected to the first electrode of the first transistor T1.

[0089] The third transistor T3 can be turned on by the scan signal of the scan control line GCL to connect the gate electrode and the second electrode of the first transistor T1 to each other. That is, when the third transistor T3 is turned on, the gate electrode and the second electrode of the first transistor T1 can be connected to each other, and therefore, the first transistor T1 can be driven as a diode. The gate electrode of the third transistor T3 can be connected to the scan control line GCL, the first electrode of the third transistor T3 can be connected to the second electrode of the first transistor T1, and the second electrode of the third transistor T3 can be connected to the gate electrode of the first transistor T1.

[0090] The fourth transistor T4 can be turned on by the scan signal of the scan start line GIL to connect the gate electrode of the first transistor T1 and the second initialization voltage line to each other. In this case, the gate electrode of the first transistor T1 can be discharged to the second initialization voltage Vint2 of the second initialization voltage line. The gate electrode of the fourth transistor T4 can be connected to the scan start line GIL, the first electrode of the fourth transistor T4 can be connected to the second initialization voltage line, and the second electrode of the fourth transistor T4 can be connected to the gate electrode of the first transistor T1.

[0091] The fifth transistor T5 can be turned on by the emitter signal of the emitter line EML to connect the first electrode of the first transistor T1 and the first drive voltage line VDDL to each other. The gate electrode of the fifth transistor T5 can be connected to the emitter line EML, the first electrode of the fifth transistor T5 can be connected to the first drive voltage line VDDL, and the second electrode of the fifth transistor T5 can be connected to the first electrode of the first transistor T1.

[0092] The sixth transistor T6 can be turned on by the emission signal of the emitter line EML to connect the second electrode of the first transistor T1 to the pixel electrode of the light-emitting device ED. The gate electrode of the sixth transistor T6 can be connected to the emitter line EML, the first electrode of the sixth transistor T6 can be connected to the second electrode of the first transistor T1, and the second electrode of the sixth transistor T6 can be connected to the pixel electrode of the light-emitting device ED. When both the fifth transistor T5 and the sixth transistor T6 are turned on, driving current can be supplied to the light-emitting device ED.

[0093] The seventh transistor T7 can be turned on by the scan signal of the second scan write line GWL2 to connect the first initialization voltage line and the pixel electrode of the light-emitting device ED to each other. In this case, the pixel electrode of the light-emitting device ED can be discharged to the first initialization voltage Vint1. The gate electrode of the seventh transistor T7 can be connected to the second scan write line GWL2, the first electrode of the seventh transistor T7 can be connected to the first initialization voltage line, and the second electrode of the seventh transistor T7 can be connected to the pixel electrode of the light-emitting device ED.

[0094] A storage capacitor Cst can be formed between the gate electrode of the first transistor T1 and the first drive voltage line VDDL. One electrode of the storage capacitor Cst can be connected to the gate electrode of the first transistor T1, and the other electrode of the storage capacitor Cst can be connected to the first drive voltage line VDDL. Therefore, the storage capacitor Cst can maintain the potential difference between the gate electrode of the first transistor T1 and the first drive voltage line VDDL.

[0095] Boost capacitor C BOOSTIt can be formed between the gate electrode of the second transistor T2 and the gate electrode of the first transistor T1. Boost capacitor C BOOST One electrode can be connected to the first scan write line GWL1, which is connected to the gate electrode of the second transistor T2, and the boost capacitor C BOOST The other electrode can be connected to the gate electrode of the first transistor T1 and one electrode of the storage capacitor Cst. Boost capacitor C BOOST It can be a boost capacitor, and when the signal of the first scan write line GWL1 is the voltage that turns off the second transistor T2, the voltage of the node can be increased to reduce the voltage that displays black (black voltage).

[0096] Each sensor circuit PC' may include multiple transistors and may be connected to an optical receiver PD. The multiple transistors may include an eighth transistor T8, a ninth transistor T9, and a tenth transistor T10. Among the multiple transistors, the eighth transistor T8 may be a driving transistor, and the ninth transistor T9 and the tenth transistor T10 may be transistors used as switching devices to be turned on or off according to a scan signal applied to the respective gate electrode of the transistor.

[0097] When multiple light-emitting devices ED and multiple light-receiving devices PD are arranged in a display device 1 (see...) Figure 1 In this context, the voltage or signal lines used to drive the light-emitting device ED can be commonly used to drive the light-receiving device PD. That is, by reducing the number of lines used to drive the display device 1 (see...) Figure 1 The additional arrangement of voltage lines or signal lines of multiple optical receivers PD in the display device 1 (see...) ensures... Figure 1 The resolution can be increased, and the NDA in the peripheral region can be reduced (see...). Figure 1 For example, connected to pixel P (see...) Figure 1 The signal line of the gate electrode of the second transistor T2 can be shared with the signal line of the gate electrode of the tenth transistor T10 connected to the optical sensor. That is, the gate electrodes of the second transistor T2 and the tenth transistor T10 can be connected to the first scan write line GWL1. As another example, the second drive voltage line VSSL can be a common voltage line connected to the counter electrode of the light-emitting device ED and the counter electrode of the light-receiving device PD. As another example, the first initialization voltage line through which the first initialization voltage Vint1 is applied can be a common voltage line connected to the second electrode of the eighth transistor T8 and the second electrode of the seventh transistor T7 of the optical sensor.

[0098] Each photodetector (PD) can be a photodiode comprising a sensing electrode, a counter electrode, and a photoconversion layer disposed between the sensing electrode and the counter electrode. Each photodetector (PD) can convert externally incident light into an electrical signal. The photodetector (PD) can be a photodiode or phototransistor comprising pn-type or pin-type inorganic materials. Optionally, the photodetector (PD) can be an organic photodiode comprising an electron-supplying material that generates donor ions and an electron-accepting material that generates acceptor ions.

[0099] When the optical receiver PD is exposed to external light, photocharge is generated, and this photocharge accumulates in the sensing electrodes of the optical receiver PD. In this case, the voltage at the nodes electrically connected to the sensing electrodes can increase. When the optical receiver PD and the fingerprint sensing line FRL are connected to each other by the conduction of the eighth transistor T8 and the tenth transistor T10, current can flow in the fingerprint sensing line FRL in proportion to the voltage at the nodes where charge has accumulated.

[0100] The eighth transistor T8 can be turned on by a voltage applied to its gate electrode to connect the first initialization voltage line and the first electrode of the tenth transistor T10 to each other. In this case, the second electrode of the tenth transistor T10 can be discharged to the first initialization voltage Vint1. The gate electrode of the eighth transistor T8 can be connected to the node between the ninth transistor T9 and the optical receiver PD, the first electrode of the eighth transistor T8 can be connected to the first initialization voltage line, and the second electrode of the eighth transistor T8 can be connected to the first electrode of the tenth transistor T10. The eighth transistor T8 can be a source follower amplifier that generates a source-drain current proportional to the amount of charge input to the node of the gate electrode of the eighth transistor T8. The first electrode of the eighth transistor T8 can be connected to either the first drive voltage line VDDL or the second initialization voltage line.

[0101] The tenth transistor T10 can be turned on by the scan signal of the first scan write line GWL1 to connect the second electrode of the eighth transistor T8 to the fingerprint sensing line FRL. The fingerprint sensing line FRL can be configured to transmit the fingerprint sensing signal to the readout circuit. The gate electrode of the tenth transistor T10 can be connected to the first scan write line GWL1, the first electrode of the tenth transistor T10 can be connected to the second electrode of the eighth transistor T8, and the second electrode of the tenth transistor T10 can be connected to the fingerprint sensing line FRL.

[0102] The ninth transistor T9 can be turned on by the reset signal of the reset line RSTL to reset the node connected to the gate electrode of the eighth transistor T8 to the reset voltage Vrst. The gate electrode of the ninth transistor T9 can be connected to the reset line RSTL, the first electrode of the ninth transistor T9 can be connected to the reset voltage line, and the second electrode of the ninth transistor T9 can be connected to the node connecting the optical receiver PD and the eighth transistor T8 to each other. When the reset driver for the reset signal of the output reset line RSTL is omitted, the ninth transistor T9 can be turned on by the scan signal.

[0103] When the first electrode of each of the first transistor T1, second transistor T2, third transistor T3, fourth transistor T4, fifth transistor T5, sixth transistor T6, seventh transistor T7, eighth transistor T8, ninth transistor T9, and tenth transistor T10 is the source electrode, the second electrode of each of the first transistor T1, second transistor T2, third transistor T3, fourth transistor T4, fifth transistor T5, sixth transistor T6, seventh transistor T7, eighth transistor T8, ninth transistor T9, and tenth transistor T10 can be the drain electrode. Optionally, when the first electrode of each of the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, the seventh transistor T7, the eighth transistor T8, the ninth transistor T9, and the tenth transistor T10 is the drain electrode, the second electrode of each of the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, the seventh transistor T7, the eighth transistor T8, the ninth transistor T9, and the tenth transistor T10 can be the source electrode.

[0104] The active layer of each of the first transistor T1, second transistor T2, third transistor T3, fourth transistor T4, fifth transistor T5, sixth transistor T6, seventh transistor T7, eighth transistor T8, ninth transistor T9, and tenth transistor T10 may comprise one of polycrystalline silicon, amorphous silicon, and oxide semiconductor. For example, the first transistor T1, second transistor T2, fifth transistor T5, sixth transistor T6, seventh transistor T7, eighth transistor T8, and tenth transistor T10 may be p-type transistors. In this case, the active layer of each of the first transistor T1, second transistor T2, fifth transistor T5, sixth transistor T6, seventh transistor T7, eighth transistor T8, and tenth transistor T10 may comprise polycrystalline silicon. Furthermore, each of the third transistor T3, fourth transistor T4, and ninth transistor T9 may be an n-type transistor comprising an oxide semiconductor active layer.

[0105] However, embodiments according to this disclosure are not limited thereto, and each of the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, the seventh transistor T7, the eighth transistor T8, the ninth transistor T9, and the tenth transistor T10 may be a p-type transistor. As another example, the eighth transistor T8, the ninth transistor T9, and the tenth transistor T10 may be formed as p-type transistors.

[0106] Figure 6 It is a display device 1 according to some embodiments (see Figure 1 A schematic floor plan of a portion of ( ). For example, Figure 6 The corresponding display device 1 according to the embodiment Figure 1 An enlarged schematic plan view of section A. For convenience, Figure 6 A plan view above dam layer 215 is shown.

[0107] refer to Figure 6 The display device 1 may include multiple light-emitting devices, multiple light-receiving devices, and multiple auxiliary light-emitting devices. The multiple light-emitting devices may include a first light-emitting device ED1, a second light-emitting device ED2, and a third light-emitting device ED3, and the multiple light-receiving devices may include a first light-receiving device PD1 and a second light-receiving device PD2. The multiple auxiliary light-emitting devices may include an auxiliary light-emitting device ED4.

[0108] The first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3 can emit light of different colors from each other. For example, the first light-emitting device ED1 can emit green light, the second light-emitting device ED2 can emit blue light, and the third light-emitting device ED3 can emit red light. Red light can be light in the wavelength range of approximately 580 nm to approximately 780 nm, blue light can be light in the wavelength range of approximately 380 nm to approximately 495 nm, and green light can be light in the wavelength range of approximately 495 nm to approximately 580 nm. The first light-receiving device PD1 can absorb light in the visible light band. That is, the first light-receiving device PD1 can sense an object by detecting the light emitted from the first light-emitting device ED1, the second light-emitting device ED2, and / or the third light-emitting device ED3 and reflected by the object.

[0109] The emitting layer of the auxiliary light-emitting device ED4 can emit light of the same color as the light emitted from one of the first light-emitting devices ED1, the second light-emitting device ED2, and the third light-emitting device ED3. For example, like the second light-emitting device ED2 which emits blue light, the emitting layer of the auxiliary light-emitting device ED4 can emit light in the wavelength range of approximately 380 nm to approximately 495 nm. However, the wavelength conversion pattern 400, which will be described later (see...) Figure 7The light source ED4 can be located on the auxiliary light-emitting device. Therefore, light emitted from the emitting layer of the auxiliary light-emitting device ED4 in the visible light band can be converted into light in the infrared band and emitted through the wavelength conversion pattern 400 (see [link to pattern 400]). Figure 7 The second light receiver PD2 can absorb light in the infrared band. That is, the second light receiver PD2 can sense an object by detecting light emitted from the auxiliary light-emitting device ED4, converted into the infrared band, and then reflected by the object.

[0110] Each light-emitting device may include a pixel electrode, a counter electrode, and an intermediate layer (e.g., an emitting layer) disposed between the pixel electrode and the counter electrode, and each light-receiving device may include a sensing electrode, a counter electrode, and an intermediate layer (e.g., an active layer) disposed between the pixel electrode and the counter electrode. Therefore, the first light-emitting device ED1 may include a first pixel electrode 1210, the second light-emitting device ED2 may include a second pixel electrode 2210, the third light-emitting device ED3 may include a third pixel electrode 3210, and the auxiliary light-emitting device ED4 may include a fourth pixel electrode 4210. The first light-receiving device PD1 may include a first sensing electrode 5210, and the second light-receiving device PD2 may include a second sensing electrode 6210. The first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, the fourth pixel electrode 4210, the first sensing electrode 5210, and the second sensing electrode 6210 may be on the substrate 100 (see...). Figure 7 The two objects are arranged separately from each other. As used herein, the expression "in a plan view" refers to a plan view taken in a direction perpendicular to the base 100. That is, the expression "A and B are separated from each other in a plan view" means "when viewed in a direction perpendicular to the base 100, A and B are separated from each other".

[0111] The dam layer 215 may be located on the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, the fourth pixel electrode 4210, the first sensing electrode 5210, and the second sensing electrode 6210, and may cover the edge of each of the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, the fourth pixel electrode 4210, the first sensing electrode 5210, and the second sensing electrode 6210. That is, the dam layer 215 may include multiple dam layer openings that respectively expose the central portions of the plurality of pixel electrodes and the plurality of sensing electrodes. For example, the dam layer 215 may have a first dam layer opening LOP1 that exposes the central portion of the first pixel electrode 1210, a second dam layer opening LOP2 that exposes the central portion of the second pixel electrode 2210, a third dam layer opening LOP3 that exposes the central portion of the third pixel electrode 3210, a fourth dam layer opening LOP4 that exposes the central portion of the fourth pixel electrode 4210, a fifth dam layer opening LOP5 that exposes the central portion of the first sensing electrode 5210, and a sixth dam layer opening LOP6 that exposes the central portion of the second sensing electrode 6210.

[0112] According to some embodiments, the emitting layer for emitting light can be arranged in the first dam opening LOP1, the second dam opening LOP2, the third dam opening LOP3, and the fourth dam opening LOP4 of the dam layer 215, respectively, and the active layer for detecting light can be arranged in the fifth dam opening LOP5 and the sixth dam opening LOP6 of the dam layer 215, respectively. The counter electrode can be located on the emitting layer and the active layer. As described above, the stacked structure of the pixel electrode, the emitting layer, and the counter electrode can form a light-emitting device. Furthermore, as described above, the stacked structure of the sensing electrode, the active layer, and the counter electrode can form a light-receiving device. One dam opening of the dam layer 215 can correspond to a light-emitting device and can define an emitting region. Furthermore, one dam opening of the dam layer 215 can correspond to a light-receiving device and can define a sensing region.

[0113] For example, an emitting layer emitting green light can be arranged in the first dam opening LOP1, and therefore, the first dam opening LOP1 can define a first emitting region EA1. Similarly, an emitting layer emitting blue light can be arranged in the second dam opening LOP2, and therefore, the second dam opening LOP2 can define a second emitting region EA2. An emitting layer emitting red light can be arranged in the third dam opening LOP3, and therefore, the third dam opening LOP3 can define a third emitting region EA3. As described above, the emitting layer of the auxiliary light-emitting device ED4 can emit light of the same color as the light emitted from the emitting layer of the second light-emitting device ED2. Therefore, an emitting layer emitting blue light can also be arranged in the fourth dam opening LOP4, and therefore, the fourth dam opening LOP4 can define a fourth emitting region EA4. An active layer for detecting light in the visible light band can be arranged in the fifth dam opening LOP5, and therefore, the fifth dam opening LOP5 can define a first sensing region SA1. An active layer for detecting light in the infrared band can be arranged in the sixth dam opening LOP6, and therefore, the sixth dam opening LOP6 can define the second sensing region SA2.

[0114] Therefore, the area of ​​the first dam opening LOP1 can be the same as the area of ​​the first transmission region EA1. The area of ​​the second dam opening LOP2 can be the same as the area of ​​the second transmission region EA2, the area of ​​the third dam opening LOP3 can be the same as the area of ​​the third transmission region EA3, and the area of ​​the fourth dam opening LOP4 can be the same as the area of ​​the fourth transmission region EA4. Similarly, the area of ​​the fifth dam opening LOP5 can be the same as the area of ​​the first sensing region SA1, and the area of ​​the sixth dam opening LOP6 can be the same as the area of ​​the second sensing region SA2.

[0115] According to some embodiments, the area of ​​the fourth emitting region EA4 can be smaller than the area of ​​the second emitting region EA2. Like the second light-emitting device ED2, the auxiliary light-emitting device ED4 can emit blue light. However, due to the wavelength conversion pattern 400 located on the auxiliary light-emitting device ED4, the fourth emitting region EA4 can emit light in the infrared band. This is because light in the infrared band is more suitable for use with display device 1 (see...). Figure 1 The user is not visible to the fourth emission region EA4, and it is emitted for sensing, so a large emission area is not required. Therefore, the fourth emission region EA4 can be designed to have a smaller area in a plan view than the second emission region EA2.

[0116] When perpendicular to the base 100 (see...) Figure 7When viewed in the direction perpendicular to the base 100 (z-axis direction), each of the first dam layer opening LOP1, the second dam layer opening LOP2, the third dam layer opening LOP3, the fourth dam layer opening LOP4, the fifth dam layer opening LOP5, and the sixth dam layer opening LOP6 can have a polygonal shape. In other words, when viewed in the direction perpendicular to the base 100 (z-axis direction), each of the first emission region EA1, the second emission region EA2, the third emission region EA3, the fourth emission region EA4, the first sensing region SA1, and the second sensing region SA2 can have a polygonal shape. Figure 6 This shows what happens when the substrate is perpendicular to 100 (see...). Figure 7 When viewed in the direction (z-axis direction), each of the first emitting region EA1, the second emitting region EA2, the third emitting region EA3, and the fourth emitting region EA4, the first sensing region SA1, and the second sensing region SA2 has a quadrilateral shape. However, embodiments according to this disclosure are not limited thereto. For example, when viewed perpendicular to the substrate 100 (see... Figure 7 When viewed in the direction of the z-axis, each of the first emission region EA1, the second emission region EA2, the third emission region EA3 and the fourth emission region EA4, the first sensing region SA1 and the second sensing region SA2 can have a circular shape or an elliptical shape.

[0117] Display device 1 (see) Figure 1 This can include elements arranged in the display area DA (see...). Figure 1 An array of light-emitting devices and light-receiving devices in a [missing information - likely a specific configuration or structure]. The array of light-emitting devices and light-receiving devices may include a first light-emitting device ED1, a second light-emitting device ED2, a third light-emitting device ED3, an auxiliary light-emitting device ED4, a first light-receiving device PD1, and a second light-receiving device PD2 arranged in a two-dimensional configuration. According to some embodiments, the array of light-emitting devices and light-receiving devices may have a configuration in which a minimum repeating unit, including the first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, the auxiliary light-emitting device ED4, the first light-receiving device PD1, and the second light-receiving device PD2, is repeatedly arranged in a first direction (e.g., the y-axis direction) and a second direction (e.g., the x-axis direction). The term "minimum repeating unit" refers to a repeating unit having a minimum number of sub-pixels. According to some embodiments, the first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, the auxiliary light-emitting device ED4, the first light-receiving device PD1, and the second light-receiving device PD2 included in the minimum repeating unit can be as follows: Figure 6 It is arranged like that in area A.

[0118] In the plan view, two second light-emitting devices ED2 and one third light-emitting device ED3 can be alternately arranged in the first column in a first direction (e.g., the y-axis direction). That is, one second emitting region EA2, another second emitting region EA2, and the third emitting region EA3 can be repeatedly arranged in the first column. In this regard, an auxiliary light-emitting device ED4 can be arranged between the two second light-emitting devices ED2 relative to the first direction (e.g., the y-axis direction). Therefore, one second light-emitting device ED2, the auxiliary light-emitting device ED4, another second light-emitting device ED2, and the third light-emitting device ED3 can be repeatedly arranged in the first column in the first direction (e.g., the y-axis direction).

[0119] Similarly, the first light-emitting device ED1 can be repeatedly arranged in the second column along the first direction (e.g., the y-axis direction). That is, the first emission region EA1 can be repeatedly arranged in the second column. However, the first light-receiving device PD1 or the second light-receiving device PD2 can be arranged between the first light-emitting devices ED1 arranged adjacent to each other relative to the first direction (e.g., the y-axis direction). In this respect, the first light-receiving device PD1 and the second light-receiving device PD2 can be arranged alternately. Therefore, one first light-emitting device ED1, a second light-receiving device PD2, another first light-emitting device ED1, and a first light-receiving device PD1 can be repeatedly arranged in the second column along the first direction (e.g., the y-axis direction).

[0120] Next, a second light-emitting device ED2, an auxiliary light-emitting device ED4, another second light-emitting device ED2, and a third light-emitting device ED3 can be repeatedly arranged in the third column in the first direction (e.g., the y-axis direction), just as in the first column. However, the third column can be arranged alternately with the first column relative to the first direction (e.g., the y-axis direction). That is, relative to a specific row in the second direction (e.g., the x-axis direction), the auxiliary light-emitting device ED4 of the first column and the third light-emitting device ED3 of the third column can be arranged in the same row.

[0121] Next, a first light-emitting device ED1, a second light-receiving device PD2, another first light-emitting device ED1, and a first light-receiving device PD1 can be repeatedly arranged in the fourth column in the first direction (e.g., the y-axis direction), just as in the second column. However, the fourth column can be arranged alternately with the second column relative to the first direction (e.g., the y-axis direction). That is, relative to a specific row in the second direction (e.g., the x-axis direction), the second light-receiving device PD2 of the second column and the first light-receiving device PD1 of the fourth column can be arranged in the same row.

[0122] Included Figure 6The first to fourth columns in region A are arbitrarily determined columns, and the first to fourth columns can be arranged sequentially and repeatedly in a second direction (e.g., the x-axis direction).

[0123] Figure 7 This is a schematic cross-sectional view of a portion of a display device 1 according to some embodiments. For example, Figure 7 It is along Figure 6 A schematic cross-sectional view of display device 1 taken from line II-II'.

[0124] like Figure 7 As shown, the display device 1 according to some embodiments may include a substrate 100. The substrate 100 may include various materials having flexible or bendable properties. For example, the substrate 100 may include glass, metal, or polymer resin. Furthermore, the substrate 100 may include polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. However, the substrate 100 may be modified in various ways. For example, the substrate 100 may have a multilayer structure comprising two layers, each comprising the aforementioned polymer resin, and a barrier layer disposed between the two layers and comprising an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride).

[0125] First light-emitting device ED1, second light-emitting device ED2, third light-emitting device ED3 (see...) Figure 6 The auxiliary light-emitting device ED4, the first light-receiving device PD1, the second light-receiving device PD2, the pixel circuit PC, and the sensor circuit PC' can be located on the substrate 100. The pixel circuit PC can be electrically connected to each of the light-emitting devices and the auxiliary light-emitting device, and the sensor circuit PC' can be electrically connected to each of the light-receiving devices.

[0126] Because the first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3 (see...) Figure 6 The first light receiver PD1 and the second light receiver PD2 are electrically connected to the sensor circuit PC', thus enabling control of light emission. Furthermore, because the first light receiver PD1 and the second light receiver PD2 are electrically connected to the sensor circuit PC', light detection can be controlled. The pixel circuit PC may include multiple thin-film transistors (TFTs) and a storage capacitor Cst, and can be connected to a reference... Figure 5 The pixel circuits PC described have essentially the same structure. For ease of explanation, Figure 7 A thin-film transistor (TFT) is shown, and the TFT can be used with the first transistor T1 described above (see [reference]). Figure 5 Similarly, the sensor circuit PC' can include multiple thin-film transistors (TFTs) and can be correlated with a reference. Figure 5 The described sensor circuit PC' has essentially the same structure. For ease of explanation, Figure 7 A thin-film transistor TFT' is shown, and the thin-film transistor TFT' can be used with the aforementioned eighth transistor T8 (see...). Figure 5 (Corresponding to this). In the following text, for ease of description, we will mainly describe a pixel circuit PC.

[0127] A buffer layer 201 comprising inorganic materials (such as silicon oxide, silicon nitride, and / or silicon oxynitride) may be disposed between the thin-film transistor TFT and the substrate 100. The buffer layer 201 may increase the smoothness of the upper surface of the substrate 100, or may prevent or reduce the penetration of impurities from the substrate 100 into the semiconductor layer Act of the thin-film transistor TFT.

[0128] like Figure 7 As shown, a thin-film transistor (TFT) may include a semiconductor layer Act comprising amorphous silicon, polycrystalline silicon, organic semiconductor material, or oxide semiconductor material. Furthermore, the TFT may include a gate electrode GE, a source electrode SE, and / or a drain electrode DE. The gate electrode GE may include various conductive materials and have various layer structures including, for example, Mo and Al layers. Optionally, the gate electrode GE may include a Ti layer, an Al layer, and / or a Cu layer. Each of the source electrode SE and the drain electrode DE may also include various conductive materials and have various layer structures including, for example, Ti, Al, and / or Cu layers.

[0129] To ensure insulation between the semiconductor layer Act and the gate electrode GE, a gate insulating layer 203 comprising inorganic materials (such as silicon oxide, silicon nitride, and / or silicon oxynitride) can be disposed between the semiconductor layer Act and the gate electrode GE. Figure 7 The diagram shows that the gate insulating layer 203 has a shape corresponding to the entire surface of the substrate 100 and has a structure in which contact holes are formed in portions (e.g., set or predetermined portions), but embodiments according to this disclosure are not limited thereto. For example, the gate insulating layer 203 may be patterned in the same shape as the gate electrode GE.

[0130] Furthermore, a first interlayer insulating layer 205 comprising inorganic materials (such as silicon oxide, silicon nitride, and / or silicon oxynitride) may be located on the gate electrode GE. The first interlayer insulating layer 205 may have a single-layer structure or a multilayer structure comprising the aforementioned materials. Such an insulating layer comprising inorganic materials may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0131] The storage capacitor Cst may include a first electrode CE1 and a second electrode CE2 that overlap each other, with a first interlayer insulating layer 205 between the first electrode CE1 and the second electrode CE2. The storage capacitor Cst may overlap with a thin-film transistor (TFT). In this respect, Figure 7 The diagram shows that the gate electrode GE of the thin-film transistor TFT is the first electrode CE1 of the storage capacitor Cst, but embodiments according to this disclosure are not limited thereto. For example, the storage capacitor Cst may not overlap with the thin-film transistor TFT. The second electrode CE2 of the storage capacitor Cst may comprise a conductive material comprising Mo, Al, Cu, and Ti, and may have a single-layer structure or a multilayer structure comprising the aforementioned materials.

[0132] A second interlayer insulating layer 207 comprising inorganic materials (such as silicon oxide, silicon nitride, and / or silicon oxynitride) may be located on the second electrode CE2 of the storage capacitor Cst. The second interlayer insulating layer 207 may have a single-layer structure or a multi-layer structure comprising the aforementioned materials.

[0133] The source electrode SE and drain electrode DE may be located on the second interlayer insulating layer 207. Each of the source electrode SE and drain electrode DE may include a material with excellent conductivity. Each of the source electrode SE and drain electrode DE may include a conductive material comprising Mo, Al, Cu and / or Ti, and may have a single-layer structure or a multilayer structure comprising the above materials. For example, each of the source electrode SE and drain electrode DE may have a Ti / Al / Ti multilayer structure. However, embodiments according to this disclosure are not limited thereto. For example, a thin-film transistor (TFT) may include only one of the source electrode SE and drain electrode DE, or may not include both the source electrode SE and drain electrode DE.

[0134] Planarization layer 208 can be arranged to cover thin-film transistor (TFT) and storage capacitor (Cst). Planarization layer 208 may include an organic insulating material. For example, planarization layer 208 may include benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA), polystyrene, phenolic polymer derivatives, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, or mixtures thereof. According to some embodiments, a third interlayer insulating layer may be further located below planarization layer 208. The third interlayer insulating layer may include an inorganic insulating material (such as silicon oxide, silicon nitride, or silicon oxynitride).

[0135] First pixel electrode 1210, second pixel electrode 2210, third pixel electrode 3210 (see...) Figure 6The fourth pixel electrode 4210, the first sensing electrode 5210, the second sensing electrode 6210, and the dam layer 215 may be located on the planarization layer 208. The dam layer 215 may be located on the planarization layer 208 to cover the edges of each of the plurality of pixel electrodes and the plurality of sensing electrodes.

[0136] First pixel electrode 1210, second pixel electrode 2210, third pixel electrode 3210 (see...) Figure 6 Each of the fourth pixel electrode 4210, the first sensing electrode 5210, and the second sensing electrode 6210 can be a reflective electrode. For example, the first pixel electrode 1210, the second pixel electrode 2210, and the third pixel electrode 3210 (see...) Figure 6 Each of the fourth pixel electrode 4210, the first sensing electrode 5210, and the second sensing electrode 6210 may include a light-transmitting conductive layer and a reflective layer, wherein the light-transmitting conductive layer comprises a light-transmitting conductive oxide (such as ITO, In2O3, or IZO), and the reflective layer comprises a metal (such as Al or Ag). For example, the first pixel electrode 1210, the second pixel electrode 2210, and the third pixel electrode 3210 (see...) Figure 6 Each of the fourth pixel electrode 4210, the first sensing electrode 5210, and the second sensing electrode 6210 may have a three-layer structure of ITO / Ag / ITO.

[0137] The dam layer 215 may include multiple dam layer openings that expose the central portions of multiple pixel electrodes and multiple sensing electrodes, respectively. For example, the dam layer 215 may have a first dam layer opening LOP1 that exposes the central portion of a first pixel electrode 1210, a second dam layer opening LOP2 that exposes the central portion of a second pixel electrode 2210, and an opening LOP2 that exposes a third pixel electrode 3210 (see [link to documentation]). Figure 6 The third dam layer opening LOP3 in the central part of the ) (see Figure 6 The fourth dam opening (LOP4) exposes the central portion of the fourth pixel electrode 4210, the fifth dam opening (LOP5) exposes the central portion of the first sensing electrode 5210, and the sixth dam opening (LOP6) exposes the central portion of the second sensing electrode 6210. Therefore, each of the first dam opening (LOP1), the second dam opening (LOP2), the third dam opening (LOP3), and the fourth dam opening (LOP4) can define an emission area, and each of the fifth dam opening (LOP5) and the sixth dam opening (LOP6) can define a sensing area.

[0138] Furthermore, the dam layer 215 can increase the distance between the edge of the pixel electrode and the counter electrode 230 or the distance between the edge of the sensing electrode and the counter electrode 230, thereby preventing or reducing the occurrence of arcing at the edges of multiple pixel electrodes and multiple sensing electrodes. The dam layer 215 may include organic insulating materials (such as polyimide, polyamide, acrylic resin, BCB, HMDSO, and phenolic resin) and can be formed by methods such as spin coating.

[0139] The emitting layer 222-1 can be arranged in each of the first dam opening LOP1, the second dam opening LOP2, the third dam opening LOP3, and the fourth dam opening LOP4 provided in the dam layer 215. For example, the emitting layer 222-1 may include the first emitting layer 1222 included in the first light-emitting device ED1, the second emitting layer 2222 included in the second light-emitting device ED2, and the third emitting layer 2222 included in the third light-emitting device ED3 (see...). Figure 6 The third emitting layer 1222 is included in the auxiliary light-emitting device ED4, and the fourth emitting layer 4222 is included in the auxiliary light-emitting device ED4. The emitting layer 222-1 may include organic materials, including fluorescent or phosphorescent materials that emit red, green, blue, or white light. For example, the first emitting layer 1222 may emit green light, the second emitting layer 2222 may emit blue light, the third emitting layer may emit red light, and the fourth emitting layer 4222 may emit blue light.

[0140] The emission layer 222-1 can be an organic emission layer comprising low molecular weight organic materials or high molecular weight organic materials. For example, the emission layer 222-1 can be an organic emission layer and can include copper phthalocyanine, aluminum tri-8-hydroxyquinoline (Alq3), polyphenylene acetylene (PPV) materials or polyfluorene materials.

[0141] According to some embodiments, the emitting layer 222-1 may include a host material and a dopant material. The dopant material may be a material that emits light of a certain color and may include a light-emitting material. The light-emitting material may include at least one of phosphorescent dopant, fluorescent dopant, and quantum dot. The host material may be the main material of the emitting layer 222-1 and may be a material that helps the dopant material emit light.

[0142] Active layer 222-2 can be arranged in each of the fifth dam opening LOP5 and the sixth dam opening LOP6 disposed in dam layer 215. Active layer 222-2 may include a first active layer 5222 included in the first optical receiving device PD1 and a second active layer 6222 included in the second optical receiving device PD2. For example, the first active layer 5222 can detect light in the visible light band, and the second active layer 6222 can detect light in the infrared band. According to some embodiments, the second active layer 6222 can detect light in a wider band compared to the first active layer 5222.

[0143] The active layer 222-2 can receive light from the outside to generate excitons, and then separate the generated excitons into holes and electrons. When a (+) potential is applied to the sensing electrode and a (-) potential is applied to the counter electrode 230, the holes separated in the active layer 222-2 can move toward the counter electrode 230, and the electrons separated in the active layer 222-2 can move toward the sensing electrode. Therefore, a photocurrent can be formed in the direction from the sensing electrode to the counter electrode 230. When a bias voltage is applied between the sensing electrode and the counter electrode 230, a dark current can flow in the light receiving device. Furthermore, when light is incident on the light receiving device, a photocurrent can flow in the light receiving device. According to some embodiments, the first light receiving device PD1 and the second light receiving device PD2 can detect the amount of light based on the ratio of photocurrent to dark current.

[0144] The active layer 222-2 may include p-type organic semiconductors and n-type organic semiconductors. In this respect, the p-type organic semiconductor can be used as an electron donor, and the n-type organic semiconductor can be used as an electron acceptor. According to some embodiments, the active layer 222-2 may be a hybrid layer in which p-type organic semiconductors and n-type organic semiconductors are mixed. In this case, the active layer 222-2 can be formed by co-depositing p-type organic semiconductors and n-type organic semiconductors. When the active layer 222-2 is a hybrid layer, excitons can be generated within the diffusion length from the donor-acceptor interface. According to some embodiments, the active layer 222-2 may include a first layer containing p-type organic semiconductors and a second layer containing n-type organic semiconductors. The first layer containing p-type organic semiconductors and the second layer containing n-type organic semiconductors can form a pn junction. Due to photoinduced charge separation occurring at the interfaces of these layers, excitons can be efficiently separated into holes and electrons.

[0145] p-type organic semiconductors can be compounds used as electron donors for supplying electrons. According to some embodiments, p-type organic semiconductors can be organic compounds with electron-supplying properties. For example, p-type organic semiconductors can include metal complexes, such as triarylamine compounds, benzidine compounds, pyrazoline compounds, styreneamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, naphthylphthalocyanine compounds, anthocyanin compounds, cyanocyanine compounds, carbonylphenol compounds, polyamine compounds, indole compounds, pyrrole compounds, pyrazole compounds, polyaryl compounds, fused aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetraphenylene derivatives, pyrene derivatives, perylene derivatives, or fluoranthene derivatives), or nitrogen-containing heterocyclic compounds, but embodiments of this disclosure are not limited thereto.

[0146] n-type organic semiconductors can be compounds that serve as electron acceptors. According to some embodiments, n-type organic semiconductors can be organic compounds with electron-accepting properties. For example, n-type organic semiconductors can include metal complexes comprising fullerenes, fullerene derivatives, fused aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetraphenylene derivatives, pyrene derivatives, perylene derivatives, or fluoranthene derivatives) as ligands, or five- to seven-membered heterocyclic compounds containing nitrogen, oxygen, or sulfur atoms (e.g., pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, quinoxaline, quinazoline, o-phenylenediamine, zenoline, isoquinoline). Pteridine, acridine, phenazine, o-phenanthroline, tetrazolium, pyrazole, imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole, benzoxazole, benzothiazole, carbazole, purine, triazolidine, triazolidine, tetrazolidine, oxadiazole, imidazopyridine, pyrrolidine, pyrrolopyridine, thiadiazopyridine, dibenzodiazepine or tribenzodiazepine), polyaryl compounds, fluorene compounds, cyclopentadiene compounds or silyl compounds, but the embodiments according to this disclosure are not limited thereto.

[0147] The counter electrode 230 can be located on the emitter layer 222-1 and the active layer 222-2. The counter electrode 230 located on the emitter layer 222-1 and the active layer 222-2 can be formed as a single unit. The counter electrode 230 can be a transparent electrode or a reflective electrode. According to some embodiments, the counter electrode 230 can be a transparent or translucent electrode and can include a metal thin film containing Li, Ca, LiFAl, Ag, Mg and their compounds or a material having a multilayer structure such as LiF / Ca or LiF / Al and having a small work function. In addition, besides the metal thin film, the counter electrode 230 can also include a transparent conductive oxide (TCO) film (such as ITO, IZO, ZnO or In2O3).

[0148] The first common layer 221 can be arranged between the first pixel electrode 1210 and the emitter layer 222-1 and between the first sensing electrode 5210 and the active layer 222-2, and the second common layer 223 can be arranged between the emitter layer 222-1 and the counter electrode 230 and between the active layer 222-2 and the counter electrode 230.

[0149] According to some embodiments, a hole transport region may be defined between the pixel electrode and the emitter layer 222-1 and between the sensing electrode and the active layer 222-2, and an electron transport region may be defined between the emitter layer 222-1 and the counter electrode 230 and between the active layer 222-2 and the counter electrode 230.

[0150] The hole transport region can have a single-layer or multi-layer structure. For example, a first common layer 221 can be arranged in the hole transport region. According to some embodiments, the first common layer 221 may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL).

[0151] For example, the first common layer 221 may have a single-layer structure or a multi-layer structure. When the first common layer 221 has a multi-layer structure, the first common layer 221 may include HIL and HTL, HIL and EBL, HTL and EBL, or HIL, HTL and EBL, stacked sequentially from the first pixel electrode 1210. However, embodiments according to this disclosure are not limited thereto.

[0152] According to some embodiments, the first common layer 221 may include at least one selected from m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4',4-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), polyaniline / camphorsulfonic acid (PANI / CSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), and polyaniline / poly(4-styrenesulfonate) (PANI / PSS).

[0153] The electron transport area can have a single-layer or multi-layer structure. For example, a second common layer 223 can be disposed in the electron transport area. According to some embodiments, the second common layer 223 may include at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL).

[0154] For example, the second common layer 223 may have a single-layer structure or a multi-layer structure. When the second common layer 223 has a multi-layer structure, the second common layer 223 may include ETL and EIL, HBL and EIL, HBL and ETL, or HBL, ETL and EIL, stacked sequentially from the emitter layer 222-1. However, embodiments according to this disclosure are not limited thereto.

[0155] According to some embodiments, the second common layer 223 may include at least one compound selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ) and NTAZ.

[0156] The first light-emitting device ED1 may include a first pixel electrode 1210, a first common layer 221, a first emitting layer 1222, a second common layer 223, and a counter electrode 230, which are stacked sequentially. The second light-emitting device ED2 may include a second pixel electrode 2210, a first common layer 221, a second emitting layer 2222, a second common layer 223, and a counter electrode 230, which are stacked sequentially. The third light-emitting device ED3 (see...) Figure 6 It may include sequentially stacked third pixel electrodes 3210 (see...) Figure 6 The auxiliary light-emitting device ED4 may include a fourth pixel electrode 4210, a first common layer 221, a fourth emitting layer 4222, a second common layer 223, and a counter electrode 230, stacked sequentially. Similarly, the first light-receiving device PD1 may include a first sensing electrode 5210, a first common layer 221, a first active layer 5222, a second common layer 223, and a counter electrode 230, stacked sequentially. The second light-receiving device PD2 may include a second sensing electrode 6210, a first common layer 221, a second active layer 6222, a second common layer 223, and a counter electrode 230, stacked sequentially.

[0157] The capping layer can be located on multiple light-emitting devices and multiple light-receiving devices having the above-described structure. That is, the capping layer can be located on the counter electrode 230 and can be formed as a single unit over the entire surface of the substrate 100. The capping layer can prevent or reduce the entry of contaminants or impurities (such as water and oxygen) into the display device 1, thereby relatively increasing the reliability of the display device 1.

[0158] The capping layer can be an organic capping layer comprising organic materials, an inorganic capping layer comprising inorganic materials, or an organic-inorganic composite capping layer comprising both organic and inorganic materials. The capping layer can include carbocyclic compounds, heterocyclic compounds, amino-containing compounds, porphyrin derivatives, phthalocyanine derivatives, naphthalene phthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. Carbocyclic compounds, heterocyclic compounds, and amino-containing compounds can optionally be substituted with substituents including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0159] The thin-film encapsulation layer TFE can be located on multiple light-emitting devices and multiple light-receiving devices. According to some embodiments, the thin-film encapsulation layer TFE can be located on the counter electrode 230. According to some embodiments, when the capping layer is located on the counter electrode 230, the thin-film encapsulation layer TFE can be located on the capping layer. The thin-film encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. According to some embodiments, Figure 7The thin-film encapsulation layer TFE is shown to include a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 stacked sequentially.

[0160] Each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include at least one inorganic material selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 320 may include a polymeric material. The polymeric material may include acrylic resins, epoxy resins, polyimides, and polyethylene. According to some embodiments, the organic encapsulation layer 320 may include acrylates. The organic encapsulation layer 320 may be formed by curing monomers or applying polymers. The organic encapsulation layer 320 may be transparent.

[0161] The input sensing layer TU can be located on the thin-film encapsulation layer TFE. The input sensing layer TU can obtain external input (e.g., coordinate information) based on touch events. (See reference...) Figure 3 As described, the input sensing layer TU may include multiple touch electrodes and a touch insulating layer.

[0162] The color filter component CU can be located on the input sensing layer TU. The color filter component CU may include a light blocking layer BM, a wavelength conversion pattern 400, a color filter layer CF, a transparent organic film layer 600, and an outer coating layer OC.

[0163] A light-blocking layer BM may be located on the input sensing layer TU. The light-blocking layer BM may include a light-blocking material and thus may at least partially absorb internally reflected light. The light-blocking material may include carbon black, carbon nanotubes, a resin or paste containing a black dye, and metal particles. The metal particles may include, for example, nickel (Ni), Al, Mo, and / or alloys thereof. Furthermore, the light-blocking material may include metal oxide particles (such as chromium oxide particles) or metal nitride particles (such as chromium nitride particles). Because the light-blocking layer BM includes a light-blocking material, it can reduce external light reflection. According to some embodiments, the light-blocking layer BM may include the same material as the dam layer 215 located beneath it. However, embodiments according to this disclosure are not limited thereto, and the light-blocking layer BM may include a material different from the material of the dam layer 215.

[0164] The light-blocking layer BM may include multiple light-blocking layer openings corresponding to multiple light-emitting devices and multiple light-receiving devices. For example, the light-blocking layer BM may include a first light-blocking layer opening UOP1 corresponding to the first light-emitting device ED1, a second light-blocking layer opening UOP2 corresponding to the second light-emitting device ED2, and a third light-emitting device ED3 (see [link to documentation]). Figure 6The light blocking layer BM includes a third light-blocking layer opening corresponding to the first light receiving device PD1 and a fourth light-blocking layer opening UOP4 corresponding to the auxiliary light-emitting device ED4. Furthermore, the light blocking layer BM may include a fifth light-blocking layer opening UOP5 corresponding to the first light receiving device PD1 and a sixth light-blocking layer opening UOP6 corresponding to the second light receiving device PD2. Therefore, the multiple light-blocking layer openings can overlap with corresponding openings in the multiple dam layer openings. According to some embodiments, in a plan view, the area of ​​the light-blocking layer openings can be larger than the area of ​​the dam layer openings. For example, in a plan view, the area of ​​the first light-blocking layer opening UOP1 can be larger than the area of ​​the first dam layer opening LOP1. According to some embodiments, in a plan view, the shape of the light-blocking layer openings can be the same as the shape of the dam layer openings. Because the light blocking layer BM includes multiple light-blocking layer openings, the light blocking layer BM can have a lattice shape or a grid shape.

[0165] The wavelength conversion pattern 400 and the color filter layer CF can be located on the light-blocking layer BM. According to some embodiments, the wavelength conversion pattern 400 can be arranged in the light-blocking layer opening corresponding to the auxiliary light-emitting device ED4 among the multiple light-blocking layer openings of the light-blocking layer BM. That is, the wavelength conversion pattern 400 can be arranged in the fourth light-blocking layer opening UOP4 of the light-blocking layer BM.

[0166] The wavelength conversion pattern 400 may include an infrared quantum dot material 420 that converts light in the visible light band into light in the infrared band. The infrared quantum dot material 420 may convert blue light provided from the auxiliary light-emitting device ED4 into light in the infrared band. For example, the wavelength conversion pattern 400 may include an organic material 410 and the infrared quantum dot material 420 dispersed in the organic material 410. According to some embodiments, the wavelength conversion pattern 400 may also include a scatterer dispersed in the organic material 410. The organic material 410 may include a polymer resin, such as an acrylic resin, BCB, or HMDSO.

[0167] The infrared quantum dot material 420 may have a central emission wavelength of approximately 700 nm to approximately 2,200 nm (e.g., approximately 750 nm to approximately 1,500 nm). For example, quantum dots included in the infrared quantum dot material 420 may include at least one of InCuSe, InCuS2 / ZnS, InAs / InP / ZnSe, PbS, InAs, PbSe / Te, CdS, CdTe, InP, ZnSe, and ZnS. The quantum dots included in the infrared quantum dot material 420 may have a size of several nanometers, and the wavelength of the converted light may vary depending on the size of the quantum dots. According to some embodiments, the core of the quantum dots may be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0168] Group II-VI compounds may be selected from: binary compounds selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; and compounds selected from AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZn Ternary compounds of Te, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0169] III-V group compounds may be selected from: binary compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds selected from GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0170] Group IV-VI compounds may be selected from: binary compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from SnPbSSe, SnPbSTe, SnNPbste and mixtures thereof. Group IV elements may be selected from Si, Ge and mixtures thereof. Group IV compounds may be binary compounds selected from SiC, SiGe and mixtures thereof.

[0171] In this respect, binary, ternary, or quaternary compounds can exist in the particles at a uniform concentration or in the same particle at partially different concentrations. Furthermore, quantum dots can have a core / shell structure in which one quantum dot surrounds another. The interface between the core and shell can have a concentration gradient in which the concentration of the element present in the shell decreases towards the center of the quantum dot.

[0172] According to some embodiments, quantum dots can have a core-shell structure comprising a core containing nanocrystals and a shell surrounding the core. The shell of the quantum dot can serve as a protective layer to maintain semiconductor properties by preventing or reducing chemical denaturation of the core, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the core and the shell can have a concentration gradient in which the concentration of elements present in the shell decreases toward the center of the quantum dot. Examples of the shell of a quantum dot can include oxides of metals or nonmetals, semiconductor compounds, or combinations thereof.

[0173] For example, oxides of metals or nonmetals may include binary compounds (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO) or ternary compounds (such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4), but the embodiments according to this disclosure are not limited thereto.

[0174] Semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, but are not limited thereto according to embodiments of this disclosure.

[0175] Furthermore, quantum dots can have shapes commonly used in the art and are not limited thereto. For example, quantum dots can include spherical nanoparticles, pyramidal nanoparticles, multi-armed nanoparticles or cubic nanoparticles, nanotubes, nanowires, nanofibers and nanoplates.

[0176] Because the wavelength conversion pattern 400 with the aforementioned characteristics is located on the auxiliary light-emitting device ED4, light emitted from the auxiliary light-emitting device ED4 in the visible light band can be converted into light in the infrared band and emitted to the outside. For example, light emitted from the auxiliary light-emitting device ED4 in the band of approximately 380 nm to approximately 495 nm can be converted into light in the band of approximately 750 nm to approximately 1500 nm by the infrared quantum dot material 420 included in the wavelength conversion pattern 400.

[0177] As described above, based on the wavelength of the light emitted from the display device 1, the optical sensor can sense various information from an object or user. For example, when light in the visible light band emitted from the first light-emitting device ED1 is reflected by the object and absorbed by the first light-receiving device PD1, the optical sensor can read only the surface-level information of the user's fingerprint. In contrast, when light emitted from the auxiliary light-emitting device ED4 and converted into the infrared band by the wavelength conversion pattern 400 is reflected by the object and absorbed by the second light-receiving device PD2, the optical sensor can even read information within the user's blood vessels. That is, in the display device 1 according to some embodiments, by arranging the auxiliary light-emitting device ED4, the wavelength conversion pattern 400, and the second light-receiving device PD2, in addition to fingerprint sensing, even biometric information and touch information can be sensed.

[0178] The color filter layer CF may include a first color filter CF1 corresponding to the first light-emitting device ED1, a second color filter CF2 corresponding to the second light-emitting device ED2, and a third color filter CF3 (see [link to relevant documentation]). Figure 6 The third color filter corresponds to this. The color filter layer CF can transmit only light with wavelengths within a specific band. The first color filter CF1 can be arranged in the opening UOP1 of the first light blocking layer, the second color filter CF2 can be arranged in the opening UOP2 of the second light blocking layer, and the third color filter can be arranged in the opening of the third light blocking layer.

[0179] In display device 1, a color filter layer (CF) can be located on each pixel to reduce external light reflection. For example, a red color filter that transmits only red light can be located on the pixel emitting red light, and a blue color filter that transmits only blue light can be located on the pixel emitting blue light. Therefore, when external light, as white light, is incident on, for example, the red color filter, blue and green light can be absorbed by the red color filter, and only red light can pass through the red color filter, and is then reflected by the pixel electrode and emitted to the outside through the red color filter. Therefore, when display device 1 has a color filter layer (CF), external light reflection can be reduced to approximately one-third compared to when no color filter layer (CF) is provided.

[0180] The first color filter CF1 can transmit light emitted from the first light-emitting device ED1. For example, when the first light-emitting device ED1 emits green light, the first color filter CF1 can be a green color filter that transmits green light. The second color filter CF2 can transmit light emitted from the second light-emitting device ED2. For example, when the second light-emitting device ED2 emits blue light, the second color filter CF2 can be a blue color filter that transmits blue light. The third color filter can transmit light emitted from the third light-emitting device ED3 (see...). Figure 6 The light emitted. For example, when the third light-emitting device ED3 emits red light, the third color filter can be a red color filter that transmits red light.

[0181] The color filter layer CF may also include an auxiliary color filter ACF corresponding to the auxiliary light-emitting device ED4. According to some embodiments, the auxiliary color filter ACF may be located on the auxiliary light-emitting device ED4 and on the wavelength conversion pattern 400. Because light emitted from the auxiliary light-emitting device ED4 passes through the wavelength conversion pattern 400 and is converted into light in the infrared band, the auxiliary color filter ACF needs to transmit light in the infrared band. Therefore, according to some embodiments, the auxiliary color filter ACF may include the same material as the third color filter that transmits red light. In this respect, the third color filter and the auxiliary color filter ACF can transmit light not only in the red band but also in the infrared band.

[0182] An auxiliary color filter (ACF) can be located on the wavelength conversion pattern 400 to prevent or reduce photodegradation caused by external light. Furthermore, because the wavelength conversion pattern 400 can convert blue light into light within the infrared band, it can convert not only the light emitted from the auxiliary light-emitting device ED4 into infrared light, but also blue light included in external light. Therefore, when the auxiliary color filter (ACF) is not located on the wavelength conversion pattern 400, the lifetime of the infrared quantum dot material 420 may be shortened. Therefore, in the display device 1 according to some embodiments, by arranging the auxiliary color filter (ACF) on the auxiliary light-emitting device ED4, the lifetime of the wavelength conversion pattern 400 can be relatively improved, and external light reflection can also be reduced.

[0183] Furthermore, the color filter layer CF may also include a first sensing color filter CF5 corresponding to the first light receiving device PD1. The first sensing color filter CF5 may be disposed in the opening UOP5 of the fifth light blocking layer. Because the first light receiving device PD1 absorbs light in the visible light band, the first sensing color filter CF5 may include the same material as one of the first color filter CF1, the second color filter CF2, and the third color filter. For example, when the first light receiving device PD1 detects green light, the first sensing color filter CF5 may include the same material as the first color filter CF1. That is, the first sensing color filter CF5 may be a green color filter and may transmit light in the band from approximately 495 nm to approximately 580 nm.

[0184] The color filter layer CF may not be located on the second light receiving device PD2. According to some embodiments, the transparent organic film layer 600 may be disposed in the sixth light-blocking layer opening UOP6. The transparent organic film layer 600 may be a colorless, light-transmitting layer and may comprise an organic material (such as polyimide or HMDSO). According to some embodiments, the transparent organic film layer 600 may comprise the same material as the outer coating OC, which will be described below. However, embodiments according to this disclosure are not limited thereto, and the transparent organic film layer 600 may comprise a material different from the material of the outer coating OC.

[0185] The color filter component CU may also include an outer coating OC. The outer coating OC may be arranged to cover the wavelength conversion pattern 400, the color filter layer CF, and the transparent organic film layer 600. The outer coating OC may be formed as a single unit over the entire surface of the substrate 100. The outer coating OC may be a colorless, transparent layer that is not colored in the visible light band, and may planarize the upper surface of the color filter component CU including the color filter layer CF. For example, the outer coating OC may include organic materials (such as acrylic resins, BCB, or HMDSO).

[0186] The cover window (CW) may be located on the color filter component (CU). The cover window (CW) may include at least one of glass, sapphire, and plastic. The cover window (CW) may be, for example, ultrathin glass (UTG) or may include colorless polyimide (CPI).

[0187] An adhesive component AD can be disposed between the cover window CW and the color filter component CU. Therefore, the adhesive component AD can couple the cover window CW and the color filter component CU to each other. As the adhesive component AD, general adhesive components known in the art can be used without limitation. For example, the adhesive component AD may include OCA or pressure-sensitive adhesive (PSA).

[0188] Figure 8 This is a schematic cross-sectional view of a portion of a display device 1 according to some embodiments. Reference Figure 8 Apart from the features concerning the second sensing color filter CF6, other features are consistent with the reference. Figure 6 and Figure 7 The described features are the same. Figure 8 The same reference numerals for the components are as shown above. Figure 6 and Figure 7 The reference numerals for the described elements are used instead, and the differences are mainly described below.

[0189] refer to Figure 8The color filter component CU may include a light-blocking layer BM, a wavelength conversion pattern 400, a color filter layer CF, and an outer coating OC. The light-blocking layer BM may include multiple light-blocking layer openings corresponding to multiple light-emitting devices and multiple light-receiving devices. The wavelength conversion pattern 400 may be arranged in the light-blocking layer opening corresponding to the auxiliary light-emitting device ED4 among the multiple light-blocking layer openings of the light-blocking layer BM. That is, the wavelength conversion pattern 400 may be arranged in the fourth light-blocking layer opening UOP4 of the light-blocking layer BM.

[0190] The color filter layer CF may include a first color filter CF1 corresponding to the first light-emitting device ED1, a second color filter CF2 corresponding to the second light-emitting device ED2, and a third color filter CF3 (see [link to relevant documentation]). Figure 6 The third color filter corresponds to this. The color filter layer CF can transmit only light with wavelengths within a specific band. The first color filter CF1 can be arranged in the opening UOP1 of the first light blocking layer, the second color filter CF2 can be arranged in the opening UOP2 of the second light blocking layer, and the third color filter can be arranged in the opening of the third light blocking layer.

[0191] The color filter layer CF may also include an auxiliary color filter ACF corresponding to the auxiliary light-emitting device ED4. According to some embodiments, the auxiliary color filter ACF may be located on the auxiliary light-emitting device ED4 and the wavelength conversion pattern 400. According to some embodiments, the auxiliary color filter ACF may include the same material as the third color filter that transmits red light. In this respect, the third color filter and the auxiliary color filter ACF can transmit light not only in the red band but also in the infrared band.

[0192] Furthermore, the color filter layer CF may include a first sensing color filter CF5 corresponding to the first light receiving device PD1 and a second sensing color filter CF6 corresponding to the second light receiving device PD2. The first sensing color filter CF5 may be disposed in the fifth light blocking layer opening UOP5, and the second sensing color filter CF6 may be disposed in the sixth light blocking layer opening UOP6. Because the first light receiving device PD1 absorbs light in the visible light band, the first sensing color filter CF5 may include the same material as one of the first color filter CF1, the second color filter CF2, and the third color filter. For example, when the first light receiving device PD1 detects green light, the first sensing color filter CF5 may include the same material as the first color filter CF1.

[0193] Because the second light receiving device PD2 absorbs light in the infrared band, the second sensing color filter CF6 needs to transmit light in the infrared band. Therefore, the second sensing color filter CF6 can include the same material as the third color filter that transmits red light. In this respect, the third color filter and the second sensing color filter CF6 can transmit light not only in the red band but also in the infrared band. According to the above structure, the second sensing color filter CF6 and the auxiliary color filter ACF can include the same material. Therefore, the second sensing color filter CF6 and the auxiliary color filter ACF can be formed as a single unit.

[0194] Therefore, in the display device 1 according to some embodiments, by arranging the second sensing color filter CF6 on the second light receiving device PD2, external light reflection can be reduced more efficiently. Furthermore, light emitted from the auxiliary light-emitting device ED4 and converted into light in the infrared band by the wavelength conversion pattern 400 can be reflected by the object and then absorbed by the second light receiving device PD2. Therefore, in the display device 1 according to some embodiments, in addition to fingerprint sensing, even biometric information and touch information can be sensed.

[0195] Figure 9 This is a schematic cross-sectional view of a portion of a display device 1 according to some embodiments. Reference Figure 9 Apart from the features concerning the wavelength conversion pattern 400' and the fourth color filter CF4, other features are the same as the reference. Figure 8 The described features are the same. Figure 9 The same reference numerals for the components are as shown above. Figure 8 The reference numerals for the described elements are used instead, and the differences are mainly described below.

[0196] refer to Figure 9 The color filter component CU may include a light-blocking layer BM, a wavelength conversion pattern 400', a color filter layer CF, and an outer coating OC. The light-blocking layer BM may include multiple light-blocking openings corresponding to multiple light-emitting devices and multiple light-receiving devices.

[0197] According to some embodiments, the wavelength conversion pattern 400' may be located on the upper surface of the light-blocking layer BM. For example, the lower surface of the wavelength conversion pattern 400' may be in direct contact with the upper surface of the light-blocking layer BM, but may not be in direct contact with the input sensing layer TU. Only the color filter layer CF may be arranged in the plurality of light-blocking openings of the light-blocking layer BM.

[0198] like Figure 9As shown, the wavelength conversion pattern 400' can be located on the light-blocking layer BM corresponding to the light-blocking opening of the auxiliary light-emitting device ED4 among the plurality of light-blocking openings surrounding the light-blocking layer BM. In other words, the wavelength conversion pattern 400' can be located on the light-blocking layer BM surrounding the fourth light-blocking opening UOP4. According to some embodiments, in the plan view, the wavelength conversion pattern 400' can be arranged only on the side facing the second light-receiving device PD2 and the side facing the second light-emitting device ED2 among the sides of the auxiliary light-emitting device ED4. According to some embodiments, the wavelength conversion pattern 400' can be arranged to surround the auxiliary light-emitting device ED4 in the plan view.

[0199] The color filter layer CF may include a first color filter CF1 corresponding to the first light-emitting device ED1, a second color filter CF2 corresponding to the second light-emitting device ED2, and a third color filter CF3 (see [link to relevant documentation]). Figure 6 The third color filter corresponds to this. The color filter layer CF can transmit only light with wavelengths within a specific band. The first color filter CF1 can be arranged in the opening UOP1 of the first light blocking layer, the second color filter CF2 can be arranged in the opening UOP2 of the second light blocking layer, and the third color filter can be arranged in the opening of the third light blocking layer.

[0200] The color filter layer CF may also include a fourth color filter CF4 corresponding to the auxiliary light-emitting device ED4. The fourth color filter CF4 may be disposed in the fourth light-blocking layer opening UOP4, and a portion of the side of the fourth color filter CF4 may be covered by the wavelength conversion pattern 400'. Because the auxiliary light-emitting device ED4 emits blue light like the second light-emitting device ED2, the fourth color filter CF4 may include the same material as the second color filter CF2. That is, the fourth color filter CF4 may be a blue color filter that transmits blue light.

[0201] The auxiliary color filter ACF can be located on the fourth color filter CF4. Light emitted from the auxiliary light-emitting device ED4 in the visible light band can be converted into light in the infrared band when passing through the wavelength conversion pattern 400'. Therefore, the auxiliary color filter ACF needs to transmit light in the infrared band. The auxiliary color filter ACF can include the same material as the third color filter that transmits red light. In this respect, both the third color filter and the auxiliary color filter ACF can transmit light not only in the red band but also in the infrared band.

[0202] Furthermore, the color filter layer CF may also include a first sensing color filter CF5 corresponding to the first light receiving device PD1 and a second sensing color filter CF6 corresponding to the second light receiving device PD2. The first sensing color filter CF5 may be disposed in the fifth light blocking layer opening UOP5, and the second sensing color filter CF6 may be disposed in the sixth light blocking layer opening UOP6. According to some embodiments, the first sensing color filter CF5 may be the same green color filter as the first color filter CF1, and the second sensing color filter CF6 may be the same red color filter as the third color filter. That is, the second sensing color filter CF6 and the auxiliary color filter ACF may include the same material. Therefore, the second sensing color filter CF6 and the auxiliary color filter ACF may be formed as a single unit.

[0203] Therefore, in the display device 1 according to some embodiments, although the wavelength conversion pattern 400' is only located on the upper surface of the light blocking layer BM, light in the visible light band emitted from the auxiliary light-emitting device ED4 can be efficiently emitted as light in the infrared band. For example, in the blue light emitted from the auxiliary light-emitting device ED4, light guided in the lateral direction can be converted into light in the infrared band by the wavelength conversion pattern 400'. In the blue light emitted from the auxiliary light-emitting device ED4, the remaining light guided in the vertical direction can be absorbed by the auxiliary color filter ACF and therefore not emitted to the outside. Therefore, in the display device 1 according to some embodiments, light emitted from the auxiliary light-emitting device ED4 and converted into light in the infrared band by the wavelength conversion pattern 400' can be reflected by an object and then absorbed by the second light receiving device PD2, and therefore, in addition to fingerprint sensing, even biometric information and touch information can be sensed.

[0204] Figure 10 This is a schematic plan view of a portion of a display device 1 according to some embodiments. Figure 11 This is a schematic cross-sectional view of a portion of a display device 1 according to some embodiments, and Figure 11 It is along Figure 10 A schematic cross-sectional view of display device 1 taken by line III-III'. (Reference) Figure 10 and Figure 11 Apart from the features concerning the second light-emitting device ED2, the auxiliary light-emitting device ED4, the second light-receiving device PD2, and the wavelength conversion pattern 400", other features are the same as those in the reference. Figures 6 to 8 The described features are the same. Figure 10 and Figure 11 The same reference numerals for the components in the figures are as shown above. Figures 6 to 8 The reference numerals for the described elements are used instead, and the differences are mainly described below.

[0205] refer to Figure 10Display device 1 (see Figure 11 The display area DA may include an array of light-emitting devices and light-receiving devices arranged in the display area DA. The array of light-emitting devices and light-receiving devices may include a first light-emitting device ED1, a second light-emitting device ED2, a third light-emitting device ED3, an auxiliary light-emitting device ED4, a first light-receiving device PD1, and a second light-receiving device PD2 arranged in two dimensions.

[0206] In the plan view, the auxiliary light-emitting device ED4, the second light-emitting device ED2, and the third light-emitting device ED3 can be alternately arranged in the first column in a first direction (e.g., the y-axis direction). That is, the fourth emission region EA4, the second emission region EA2, and the third emission region EA3 can be repeatedly arranged in the first column. In this regard, a second light-receiving device PD2 can be arranged between the auxiliary light-emitting device ED4 and the second light-emitting device ED2 relative to the first direction (e.g., the y-axis direction). Therefore, the auxiliary light-emitting device ED4, the second light-receiving device PD2, the second light-emitting device ED2, and the third light-emitting device ED3 can be repeatedly arranged in the first column in the first direction (e.g., the y-axis direction).

[0207] Similarly, the first light-emitting device ED1 can be repeatedly arranged in the second column along the first direction (e.g., the y-axis direction). That is, the first emission region EA1 can be repeatedly arranged in the second column. However, the second light-emitting device ED2 or the first light-receiving device PD1 can be arranged between the first light-emitting devices ED1 arranged adjacent to each other relative to the first direction (e.g., the y-axis direction). In this respect, the second light-emitting device ED2 and the first light-receiving device PD1 can be arranged alternately. Therefore, one first light-emitting device ED1, the second light-emitting device ED2, another first light-emitting device ED1, and the first light-receiving device PD1 can be repeatedly arranged in the second column along the first direction (e.g., the y-axis direction).

[0208] Next, the auxiliary light-emitting device ED4, the second light-receiving device PD2, the second light-emitting device ED2, and the third light-emitting device ED3 can be arranged repeatedly in the third column in the first direction (e.g., the y-axis direction), just as in the first column. However, the third column can be arranged alternately with the first column relative to the first direction (e.g., the y-axis direction). That is, relative to a specific row in the second direction (e.g., the x-axis direction), the second light-receiving device PD2 of the first column and the third light-emitting device ED3 of the third column can be arranged in the same row.

[0209] Next, a first light-emitting device ED1, a second light-emitting device ED2, another first light-emitting device ED1, and a first light-receiving device PD1 can be repeatedly arranged in the fourth column in the first direction (e.g., the y-axis direction), just as in the second column. However, the fourth column can be arranged alternately with the second column relative to the first direction (e.g., the y-axis direction). That is, relative to a specific row in the second direction (e.g., the x-axis direction), the second light-emitting device ED2 of the second column and the first light-receiving device PD1 of the fourth column can be arranged in the same row.

[0210] Figure 10 The first to fourth columns included are arbitrarily determined columns, and the first to fourth columns can be arranged sequentially and repeatedly in a second direction (e.g., the x-axis direction).

[0211] Therefore, refer to Figure 10 and Figure 11 The second light receiving device PD2 can be arranged between the auxiliary light-emitting device ED4 and the second light-emitting device ED2 relative to the first direction (e.g., the y-axis direction). In other words, the auxiliary light-emitting device ED4 can be arranged on one side of the second light receiving device PD2, and the second light-emitting device ED2 can be arranged on the other side of the second light receiving device PD2.

[0212] refer to Figure 11 The color filter component CU may include a light blocking layer BM, a wavelength conversion pattern 400", a color filter layer CF, and an outer coating OC. The light blocking layer BM may include multiple light blocking layer openings corresponding to multiple light emitting devices and multiple light receiving devices.

[0213] According to some embodiments, the wavelength conversion pattern 400" can be located on the upper surface of the light-blocking layer BM. For example, the lower surface of the wavelength conversion pattern 400" can be in direct contact with the upper surface of the light-blocking layer BM, but not in direct contact with the input sensing layer TU. Only the color filter layer CF can be arranged in the multiple light-blocking openings of the light-blocking layer BM.

[0214] like Figure 11 As shown, the wavelength conversion pattern 400" can be located on the light-blocking layer BM corresponding to the light-blocking opening of the second light-receiving device PD2 among the plurality of light-blocking openings surrounding the light-blocking layer BM. In other words, the wavelength conversion pattern 400" can be located on the light-blocking layer BM surrounding the sixth light-blocking opening UOP6. According to some embodiments, in the plan view, the wavelength conversion pattern 400" can be arranged only on the side of the second light-receiving device PD2 facing the auxiliary light-emitting device ED4 and the side facing the second light-emitting device ED2. According to some embodiments, the wavelength conversion pattern 400" can be arranged to surround the second light-receiving device PD2 in the plan view.

[0215] The color filter layer CF may include a second color filter CF2 corresponding to the second light-emitting device ED2, a fourth color filter CF4 corresponding to the auxiliary light-emitting device ED4, an auxiliary color filter ACF located on the fourth color filter CF4, and a second sensing color filter CF6 corresponding to the second light-receiving device PD2. As described above, the second color filter CF2 and the fourth color filter CF4 may be blue color filters that transmit blue light, and the auxiliary color filter ACF and the second sensing color filter CF6 may be red color filters that transmit red light. In this respect, the auxiliary color filter ACF and the second sensing color filter CF6 may also transmit light in the infrared band.

[0216] Therefore, in the display device 1 according to some embodiments, even though the wavelength conversion pattern 400" is only located on the upper surface of the light blocking layer BM, light in the infrared band can be detected efficiently. For example, blue light emitted from the second light-emitting device ED2 and the auxiliary light-emitting device ED4 can be reflected by an object and then guided to the second light-receiving device PD2 arranged between the auxiliary light-emitting device ED4 and the second light-emitting device ED2. However, some of the light guided to the second light-receiving device PD2 can pass through the wavelength conversion pattern 400" and be converted from blue light into light in the infrared band. The light converted into the infrared band by the wavelength conversion pattern 400" can be absorbed and detected by the second light-receiving device PD2. That is, by arranging the wavelength conversion pattern 400" on the side of the second light-receiving device PD2 in a plan view, the second light-receiving device PD2 can detect not only the light emitted from the auxiliary light-emitting device ED4, but also the light emitted from the second light-emitting device ED2. Therefore, in the display device 1 according to some embodiments, because the amount of detectable light is increased, various sensing information can be detected, and the sensing sensitivity can be relatively improved.

[0217] Figure 12 This is a schematic plan view of a portion of a display device 1 according to some embodiments. Figure 13 This is a schematic cross-sectional view of a portion of a display device 1 according to some embodiments, and Figure 13 It is along Figure 12 A schematic cross-sectional view of display device 1 taken along line IV-IV'. (Reference) Figure 12 and Figure 13 Apart from the shape and arrangement of the multiple light-emitting devices and multiple light-receiving devices in the plan view, other features are the same as those in the reference. Figures 6 to 8 The described features are the same. Figure 12 and Figure 13 The same reference numerals for the components are as shown above. Figures 6 to 8 The reference numerals for the described elements are used instead, and the differences are mainly described below.

[0218] refer to Figure 12 Display device 1 (see Figure 13 The display area DA may include an array of light-emitting devices and light-receiving devices arranged in the display area DA. The array of light-emitting devices and light-receiving devices may include a first light-emitting device ED1', a second light-emitting device ED2', a third light-emitting device ED3', an auxiliary light-emitting device ED4', a first light-receiving device PD1', and a second light-receiving device PD2' arranged in two dimensions.

[0219] In the plan view, the first light-emitting device ED1' and the third light-emitting device ED3' can be alternately arranged in the first column in the first direction (e.g., the y-axis direction). Furthermore, the second light-emitting device ED2' can be repeatedly arranged in the first direction (e.g., the y-axis direction) in a second column parallel to the first column. That is, as... Figure 12 As shown, a first light-emitting device ED1', two second light-emitting devices ED2' and a third light-emitting device ED3' can be arranged in a virtual quadrilateral area.

[0220] In this respect, two auxiliary light-emitting devices ED4' and one second light-receiving device PD2' can be arranged between the second light-emitting devices ED2' arranged adjacent to each other in the second column in the first direction (e.g., the y-axis direction). However, the auxiliary light-emitting devices ED4' and the second light-receiving devices PD2' may not be arranged in all the spaces between each pair of second light-emitting devices ED2', but may only be arranged in some of such spaces. For example, as Figure 12 As shown, two auxiliary light-emitting devices ED4' and a second light-receiving device PD2' can be arranged in two virtual quadrilateral regions.

[0221] Therefore, the two second light-emitting devices ED2', the one auxiliary light-emitting device ED4', the one second light-receiving device PD2', the one auxiliary light-emitting device ED4', and the two second light-emitting devices ED2' can be repeatedly arranged in the second column in the first direction (e.g., the y-axis direction). In other words, the second light-receiving device PD2' can be arranged between adjacent auxiliary light-emitting devices ED4' and between adjacent second light-emitting devices ED2'.

[0222] In the plan view, the first light-emitting device ED1' and the third light-emitting device ED3' can be alternately arranged in the third column in the first direction (e.g., the y-axis direction). That is, the third column can be arranged parallel to the first column.

[0223] Next, the two second light-emitting devices ED2', one auxiliary light-emitting device ED4', one second light-receiving device PD2', one auxiliary light-emitting device ED4', and two second light-emitting devices ED2' can be arranged repeatedly in the fourth column in the first direction (e.g., the y-axis direction), just as in the second column. However, the fourth column can be arranged alternately with the second column relative to the first direction (e.g., the y-axis direction). For example, relative to the second direction (e.g., the x-axis direction), the second light-receiving devices PD2' of the second column can be arranged in different rows from the second light-receiving devices PD2' of the fourth column.

[0224] The dam layer 215 may include multiple dam layer openings (LOPs) corresponding to multiple light-emitting devices and multiple light-receiving devices. For example... Figure 12 As shown, each of the plurality of dam openings (LOPs) can have a circular or elliptical shape. However, embodiments according to this disclosure are not limited thereto, and each of the plurality of dam openings (LOPs) can have a polygonal shape.

[0225] Next, refer to Figure 13 The color filter component CU may include a light-blocking layer BM, a wavelength conversion pattern 400, a color filter layer CF, and an outer coating OC. The light-blocking layer BM may include multiple light-blocking layer openings corresponding to multiple light-emitting devices and multiple light-receiving devices. The wavelength conversion pattern 400 may be arranged in the light-blocking layer opening corresponding to the auxiliary light-emitting device ED4' among the multiple light-blocking layer openings of the light-blocking layer BM. That is, the wavelength conversion pattern 400 may be arranged in the fourth light-blocking layer opening UOP4 of the light-blocking layer BM.

[0226] The color filter layer CF may include a second color filter CF2 corresponding to the second light-emitting device ED2', an auxiliary color filter ACF corresponding to the auxiliary light-emitting device ED4', and a second sensing color filter CF6 corresponding to the second light-receiving device PD2'. The second color filter CF2 may be arranged in the second light-blocking layer opening UOP2, the auxiliary color filter ACF may be located on the wavelength conversion pattern 400, and the second sensing color filter CF6 may be arranged in the sixth light-blocking layer opening UOP6. As described above, the second color filter CF2 may be a blue color filter that transmits blue light, and the auxiliary color filter ACF and the second sensing color filter CF6 may be red color filters that transmit red light. Therefore, the auxiliary color filter ACF and the second sensing color filter CF6 can be formed as a single unit.

[0227] Therefore, in the display device 1 according to some embodiments, light in the infrared band can be detected efficiently. For example, blue light emitted from the auxiliary light-emitting device ED4' can pass through the wavelength conversion pattern 400 located thereon, be converted into light in the infrared band, and then be reflected by the object and absorbed by the second light-receiving device PD2. In this respect, since the auxiliary light-emitting device ED4' is arranged on both sides of the second light-receiving device PD2, the absolute amount of light that can be detected can be increased, thereby relatively improving the sensing sensitivity of the optical sensor. Furthermore, the wavelength conversion pattern 400 and the auxiliary color filter ACF can be formed to suit the emission angle of the second light-emitting device ED2', and therefore the luminous efficiency of the second light-emitting device ED2' can be maintained. Therefore, in the display device 1 according to some embodiments, various information such as fingerprints and biometric information can be sensed while maintaining excellent image quality, and the sensing sensitivity can be relatively improved.

[0228] In the display device according to some embodiments described above, the light receiving device can absorb light across a wider wavelength band (e.g., a relatively wide wavelength band), and therefore, various sensing operations can be performed, and the sensing sensitivity can be relatively improved. However, the above-described features are merely examples, and the scope of the embodiments according to this disclosure is not limited thereto.

[0229] It should be understood that the embodiments described herein should be considered descriptive only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. A display device, characterized in that, The display device includes: Base; A light-emitting device, on the substrate, and comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein the first light-emitting device to the third light-emitting device are configured to emit light of different colors from each other; An auxiliary light-emitting device is provided on the substrate and spaced apart from the light-emitting device. A light receiving device is provided on the substrate and includes a first light receiving device and a second light receiving device, the first light receiving device being configured to absorb light in the visible light band and the second light receiving device being configured to absorb light in the infrared band. A thin-film encapsulation layer is provided on the light-emitting device, the auxiliary light-emitting device, and the light-receiving device; A light-blocking layer, on the thin-film encapsulation layer, including a plurality of openings corresponding respectively to the light-emitting device, the auxiliary light-emitting device, and the light-receiving device; and Wavelength conversion pattern on the light-blocking layer The wavelength conversion pattern includes infrared quantum dots, which are configured to convert light in the visible light band into light in the infrared band.

2. The display device according to claim 1, characterized in that, The emitting layer included in the auxiliary light-emitting device is configured to emit light of the same color as the light emitted from one of the first light-emitting device, the second light-emitting device, and the third light-emitting device.

3. The display device according to claim 2, characterized in that, The first light-emitting device is also configured to emit light in the wavelength range of 495 nm to 580 nm. The second light-emitting device is further configured to emit light in the wavelength range of 380 nm to 495 nm, and The third light-emitting device is also configured to emit light in the wavelength range of 580 nm to 780 nm.

4. The display device according to claim 3, characterized in that, The emitting layer included in the auxiliary light-emitting device is also configured to emit light in the wavelength range of 380 nm to 495 nm.

5. The display device according to claim 1, characterized in that, The first optical receiving device is further configured to absorb light in the wavelength range of 380 nm to 780 nm, and The second optical receiving device is also configured to absorb light in the wavelength range of 750 nm to 1500 nm.

6. The display device according to claim 1, characterized in that, In the plan view, the emission area of ​​the auxiliary light-emitting device is smaller than the emission area of ​​each of the first light-emitting device, the second light-emitting device, and the third light-emitting device.

7. The display device according to claim 1, characterized in that, In the plan view, the auxiliary light-emitting device and the second light-receiving device are arranged adjacent to each other.

8. The display device according to claim 7, characterized in that, In the plan view, the auxiliary light-emitting device is arranged between two second light-emitting devices arranged adjacent to each other.

9. The display device according to claim 7, characterized in that, In the plan view, the second light receiving device is arranged between the second light emitting device and the auxiliary light emitting device.

10. The display device according to claim 7, characterized in that, In the plan view, the second light receiving device is arranged between two auxiliary light-emitting devices arranged adjacent to each other.

11. The display device according to claim 1, characterized in that, The display device further includes a color filter layer, which is located on the light-blocking layer and the wavelength conversion pattern. The color filter layer includes a first color filter corresponding to the first light-emitting device, a second color filter corresponding to the second light-emitting device, and a third color filter corresponding to the third light-emitting device.

12. The display device according to claim 11, characterized in that, The display device further includes a transparent organic film layer, which is located in the opening of the plurality of openings in the light blocking layer that corresponds to the second light receiving device.

13. The display device according to claim 11, characterized in that, The display device further includes: A first sensing filter is located in an opening among the plurality of openings in the light-blocking layer corresponding to the first light-receiving device; and The second sensing color filter is located in the opening corresponding to the second light receiving device among the plurality of openings in the light blocking layer.

14. The display device according to claim 13, characterized in that, The material of the first sensing color filter is the same as that of the first color filter, and the first light-emitting device is also configured to emit green light.

15. The display device according to claim 13, characterized in that, The material of the second sensing color filter is the same as that of the third color filter, and the third light-emitting device is also configured to emit red light.

16. The display device according to claim 11, characterized in that, The wavelength conversion pattern is in the opening corresponding to the auxiliary light-emitting device among the plurality of openings in the light-blocking layer.

17. The display device according to claim 16, characterized in that, The display device further includes an auxiliary color filter, which is applied to the wavelength conversion pattern. The auxiliary color filter is made of the same material as the third color filter, and the third light-emitting device is also configured to emit red light.

18. The display device according to claim 11, characterized in that, The wavelength conversion pattern is on the upper surface of the light-blocking layer.

19. The display device according to claim 18, characterized in that, The display device further includes a fourth color filter, which is located in the opening corresponding to the auxiliary light-emitting device among the plurality of openings in the light-blocking layer. The material of the fourth color filter is the same as that of the second color filter, and the second light-emitting device is also configured to emit blue light.

20. The display device according to claim 19, characterized in that, The display device further includes an auxiliary color filter, which is located on the fourth color filter. The auxiliary color filter is made of the same material as the third color filter, and the third light-emitting device is also configured to emit red light.

21. The display device according to claim 18, characterized in that, The wavelength conversion pattern is on the light-blocking layer at the opening corresponding to the auxiliary light-emitting device among the plurality of openings surrounding the light-blocking layer.

22. The display device according to claim 18, characterized in that, The wavelength conversion pattern is on the light blocking layer at the opening corresponding to the second light receiving device among the plurality of openings surrounding the light blocking layer.

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