A vacuum coating device for processing GaN transistor

Abstract

The utility model discloses a kind of vacuum coating devices for GaN transistor processing, including vacuum coating storehouse and clamping mechanism;Vacuum coating storehouse: its inside is provided with rotating mechanism, rotating mechanism includes rotating ring, clamping frame, rotating shaft and driven gear, the rotating ring is rotationally connected in the upper end of vacuum coating storehouse interior, the upper end of rotating ring is fixedly connected with transmission gear ring one, clamping frame is slidably connected in the upper end of vacuum coating storehouse interior, the inside rotationally connected with eight rotating shafts of uniform distribution of clamping frame, the end of rotating shaft away from the center of vacuum coating storehouse is all fixedly connected with driven gear, eight driven gears are all engaged with transmission gear ring one;The vacuum coating device for GaN transistor processing, while realizing the stable clamping of different diameter GaN transistor, realize the autorotation of GaN transistor in clamping, realize the uniform vacuum coating of GaN transistor.

Description

Technical Field

[0001] This utility model relates to the field of GaN transistor processing technology, specifically to a vacuum coating apparatus for GaN transistor processing. Background Technology

[0002] As a high electron mobility (HEMT) semiconductor device, GaN (gallium nitride) transistors may require surface coating treatment using a vacuum coating machine during processing. A vacuum coating machine is a high-tech device that can perform coating operations under high vacuum conditions. This equipment encompasses a variety of technologies, such as vacuum resistance heating evaporation, electron gun heating evaporation, magnetron sputtering, MBE (molecular beam epitaxy), PLD (laser-dependent deposition), and ion beam sputtering.

[0003] In the prior art, patent CN205723452U discloses a vacuum coating machine for transistor processing, including a cover with a sealing structure at the bottom and a sealed space formed with a base through the sealing structure, a vacuuming mechanism for evacuating the sealed space, a rotating frame located in the sealed space and rotatably mounted on a support through a rotating shaft, a driving mechanism driving the rotating frame to rotate around the rotating shaft through a driving gear, a plurality of workpiece positions distributed along a circumference centered on the rotating shaft on the rotating frame, and a coating mechanism located in the sealed space and below the workpiece frame;

[0004] The clamping unit of this type of vacuum coating machine for transistor processing has a fixed specification, which cannot quickly adapt to the clamping requirements of GaN transistors of different diameters. This results in unstable clamping of GaN transistors, affecting the vacuum coating effect of GaN transistors. At the same time, it can only realize the revolution of the clamped GaN transistor. During the revolution, the position of the GaN transistor is fixed, which affects the uniformity and efficiency of vacuum coating of GaN transistors. Utility Model Content

[0005] The technical problem to be solved by this utility model is to overcome the existing defects and provide a vacuum coating device for GaN transistor processing. While achieving stable clamping of GaN transistors of different diameters, it also enables the GaN transistors to rotate during clamping, thereby achieving uniform vacuum coating of GaN transistors. This can effectively solve the problems in the background art.

[0006] To achieve the above objectives, this utility model provides the following technical solution: a vacuum coating apparatus for GaN transistor processing, comprising a vacuum coating chamber and a clamping mechanism;

[0007] Vacuum coating chamber: It is equipped with a rotating mechanism, which includes a rotating ring, a clamping frame, a rotating shaft and a driven gear. The rotating ring is rotatably connected to the upper end of the vacuum coating chamber. A transmission gear ring is fixedly connected to the upper end of the rotating ring. The clamping frame is slidably connected to the upper end of the vacuum coating chamber. Eight evenly distributed rotating shafts are rotatably connected inside the clamping frame. A driven gear is fixedly connected to the end of the rotating shaft away from the center of the vacuum coating chamber. All eight driven gears are meshed with the transmission gear ring.

[0008] Clamping mechanism: It is located at one end of the rotating shaft near the center of the vacuum coating chamber. It can stably clamp GaN transistors of different diameters, while realizing the rotation of the GaN transistors in the clamping, and realizing uniform vacuum coating of GaN transistors.

[0009] Furthermore, a control switch group is provided on the left side of the vacuum coating chamber. The input terminal of the control switch group is electrically connected to an external power supply to control various electrical appliances.

[0010] Furthermore, the rotating mechanism also includes a motor, a drive shaft, and a drive gear. The drive shaft is rotatably connected to the left end of the vacuum coating chamber, and the drive gear is fixedly connected to the right end of the drive shaft. A transmission gear ring is fixedly connected to the lower end of the rotating ring, and the transmission gear ring meshes with the drive gear. The motor is located at the left end of the vacuum coating chamber, and the right end of the motor output shaft is fixedly connected to the left end of the drive shaft. The input end of the motor is electrically connected to the output end of the control switch group to provide driving force for the revolution and rotation of the GaN transistor.

[0011] Furthermore, the clamping mechanism includes a clamping handle, a sliding groove, a sliding seat, and a clamping rod. The clamping handle is fixedly connected to one end of the rotating shaft near the center of the vacuum coating chamber. The sliding grooves are evenly arranged inside the clamping handle, and the interior of each sliding groove is slidably connected to the outer surface of the radially adjacent sliding seat. The end of each sliding seat near the center of the vacuum coating chamber is fixedly connected to a clamping rod, thereby achieving stable clamping of GaN transistors of different diameters.

[0012] Furthermore, the clamping mechanism also includes an external thread, a threaded cylinder, an adjusting ring, and connecting rods. The external threads are respectively disposed on the outer surface of the rotating shaft. The middle part of each external thread is threadedly connected to the inner part of the radially adjacent threaded cylinder. The outer surface of the threaded cylinder near the center of the vacuum coating chamber is rotatably connected to the inner part of the radially adjacent adjusting ring. The inner part of each adjusting ring is rotatably connected to evenly distributed connecting rods. The end of each connecting rod near the center of the vacuum coating chamber is rotatably connected to the end of the radially adjacent sliding seat away from the center of the vacuum coating chamber, providing driving force for the stable clamping of GaN transistors of different diameters.

[0013] Furthermore, the bottom wall of the vacuum coating chamber is fixedly connected with four evenly distributed fixed columns. The upper ends of the four fixed columns are fixedly connected with fixed rings. The outer surfaces of the fixed columns are all slidably connected to the interior of the corresponding ends of the clamping rings. The clamping rings and fixed rings are fixedly connected with evenly distributed springs. The springs are all movably sleeved on the outer surfaces of the radially adjacent fixed columns. The lower ends of the four fixed columns are fixedly connected with support rings. A positive electrode is provided at the left end of the bottom wall of the vacuum coating chamber, and a negative electrode is provided at the right end of the bottom wall of the vacuum coating chamber. Both the positive and negative electrodes are electrically connected to the output end of the control switch group, which facilitates the placement of the target material and realizes evaporation coating.

[0014] Furthermore, the upper end of the inner wall of the vacuum coating chamber is provided with uniformly distributed rib grooves, and the outer surface of the clamping frame is fixedly connected with uniformly distributed rib blocks. The rib blocks are all slidably connected to the radially adjacent rib grooves. The upper end of the vacuum coating chamber is connected to the chamber cover by uniformly distributed bolts, providing sliding support for the movement of the clamping frame.

[0015] Furthermore, a vacuum pump is provided at the lower end of the vacuum coating chamber, and a through hole is provided at the front end of the lower surface of the vacuum coating chamber. The through hole is connected to the vacuum pump through a gas pipe, and the input end of the vacuum pump is electrically connected to the output end of the control switch group to create a vacuum environment.

[0016] Compared with the prior art, the beneficial effects of this utility model are as follows: This vacuum coating apparatus for GaN transistor processing has the following advantages:

[0017] 1. The threaded cylinder moves radially under the action of the external thread, thereby driving the linkage mechanism to adjust the centering distance of the clamping rods. This enables rapid and stable clamping of GaN transistors of different diameters, greatly expanding the applicable range of GaN transistor clamping. At the same time, it further ensures the stability of GaN transistor clamping operation and facilitates the uniform coating of GaN transistors.

[0018] 2. A motor drives a gear mechanism to rotate the rotating ring, which in turn drives eight rotating shafts to rotate synchronously through transmission gears. The rotation of each rotating shaft drives the radially adjacent clamping mechanism to rotate, thereby enabling the GaN transistors in the clamps to rotate. The GaN transistors rotate in a fixed relative position while revolving around the target, resulting in a larger and more active contact area with the evaporated target material, thus achieving uniform vacuum deposition of the GaN transistors. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of this utility model;

[0020] Figure 2 This is a cross-sectional view of the internal structure of this utility model;

[0021] Figure 3 This is an enlarged structural diagram of point A in this utility model;

[0022] Figure 4 This is a cross-sectional view of the upper side of the present invention.

[0023] In the diagram: 1 Vacuum coating chamber, 2 Rotating mechanism, 21 Motor, 22 Drive shaft, 23 Drive gear, 24 Rotating ring, 25 Clamping frame, 26 Rotating shaft, 27 Driven gear, 3 Clamping mechanism, 31 External thread, 32 Threaded cylinder, 33 Adjusting ring, 34 Connecting rod, 35 Clamping handle, 36 Slide groove, 37 Sliding seat, 38 Clamping rod, 4 Chamber cover, 5 Rib block, 6 Rib groove, 7 Fixed column, 8 Fixed ring, 9 Clamping ring, 10 Spring, 11 Positive electrode, 12 Negative electrode, 13 Support ring, 14 Vacuum pump, 15 Control switch group. Detailed Implementation

[0024] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0025] Please see Figure 1-4 This embodiment provides a technical solution: a vacuum coating apparatus for GaN transistor processing, including a vacuum coating chamber 1 and a clamping mechanism 3;

[0026] Vacuum coating chamber 1: An internal rotating mechanism 2 is installed. A control switch group 15 is located on the left side of the vacuum coating chamber 1. The input terminal of the control switch group 15 is electrically connected to an external power source. The rotating mechanism 2 includes a rotating ring 24, a clamping frame 25, a rotating shaft 26, and a driven gear 27. The rotating ring 24 is rotatably connected to the upper end of the interior of the vacuum coating chamber 1. A transmission gear ring 1 is fixedly connected to the upper end of the rotating ring 24. The clamping frame 25 is slidably connected to the upper end of the interior of the vacuum coating chamber 1. Uniformly distributed rib grooves 6 are provided on the upper end of the inner wall of the vacuum coating chamber 1. The outer surface of the clamping frame 25 is fixedly connected to… The vacuum coating chamber 1 has evenly distributed ribs 5, each of which is slidably connected to radially adjacent rib grooves 6. A chamber cover 4 is connected to the upper end of the vacuum coating chamber 1 via evenly distributed bolts. Eight evenly distributed rotating shafts 26 are rotatably connected inside the clamping frame 25. A driven gear 27 is fixedly connected to the end of each rotating shaft 26 away from the center of the vacuum coating chamber 1. All eight driven gears 27 mesh with a transmission gear ring. The rotating mechanism 2 also includes a motor 21, a drive shaft 22, and a drive gear 23. The drive shaft 22 is rotatably connected to the left end of the vacuum coating chamber 1, and a drive gear 23 is fixedly connected to the right end of the drive shaft 22. Gear 23 and a transmission gear ring 24 are fixedly connected to the lower end of the rotating ring 24. The transmission gear ring 24 meshes with the drive gear 23. The motor 21 is located at the left end of the vacuum coating chamber 1. The right end of the output shaft of the motor 21 is fixedly connected to the left end of the drive shaft 22. The input end of the motor 21 is electrically connected to the output end of the control switch group 15. The clamping frame 25 is placed inside the vacuum coating chamber 1. The ribs 5 slide inside the corresponding rib grooves 6. When the ribs 5 slide to the bottom of the corresponding rib grooves 6, the driven gears 27 mesh with the transmission gear ring 1. Then, the chamber cover 4 is connected to the drive gear 23 by bolts. The upper end of the vacuum coating chamber 1 is closed, and then the motor 21 is operated by the control switch group 15. The output shaft of the motor 21 rotates, which drives the drive shaft 22 to rotate. The drive shaft 22 drives the drive gear 23 to rotate. The drive gear 23 drives the transmission gear ring 2 to rotate, which in turn drives the rotating ring 24 to rotate. The rotating ring 24 drives the transmission gear ring 1 to rotate, which in turn drives the eight driven gears 27 to rotate synchronously. The rotation of the driven gears 27 drives the radially adjacent rotating shaft 26 to rotate. The rotation of the rotating shaft 26 drives the radially adjacent GaN transistors in the clamp to rotate.

[0027] Clamping mechanism 3: Each clamping mechanism is located at one end of the rotating shaft 26 near the center of the vacuum coating chamber 1. The clamping mechanism 3 includes clamping handles 35, sliding grooves 36, sliding seats 37, and clamping rods 38. The clamping handles 35 are fixedly connected to the ends of the rotating shaft 26 near the center of the vacuum coating chamber 1. The sliding grooves 36 are evenly distributed inside the clamping handles 35, and the interiors of the sliding grooves 36 are slidably connected to the outer surfaces of the radially adjacent sliding seats 37. The ends of the sliding seats 37 near the center of the vacuum coating chamber 1 are all fixedly connected to the clamping rods 38. It also includes external threads 31, threaded cylinders 32, adjusting rings 33, and connecting rods 34. External threads 31 are respectively disposed on the outer surface of the rotating shaft 26. The middle portion of each external thread 31 is threadedly connected to the inner surface of the radially adjacent threaded cylinder 32. The end of the outer surface of the threaded cylinder 32 near the center of the vacuum coating chamber 1 is rotatably connected to the inner surface of the radially adjacent adjusting ring 33. The inner surface of the adjusting ring 33 is rotatably connected to evenly distributed connecting rods 34. The end of each connecting rod 34 near the center of the vacuum coating chamber 1 is connected to the radially adjacent sliding seat 37 away from the vacuum coating chamber 1. One end of the cylinder is rotatably connected, aligning the central axis of the GaN transistor to be coated with the central axis of the clamping handle 35. Rotating the threaded cylinder 32 causes it to move away from the center of the vacuum coating chamber 1 under the action of the radially adjacent external threads 31. Because the threaded cylinder 32 is internally rotatably connected to the radially adjacent adjusting ring 33, the adjusting ring 33 does not rotate with the threaded cylinder 32 under the limiting action of the connecting rod 34. The outward movement of the threaded cylinder 32 causes the radially adjacent adjusting ring 33 to move away from the center of the vacuum coating chamber 1. The outward movement of the adjusting ring 33 causes the corresponding connecting rod 34 to move away from the center of the vacuum coating chamber 1, and in turn, the end of the connecting rod 34 that is close to the center of the vacuum coating chamber 1 pulls the radially adjacent sliding seat 37. The sliding seat 37 moves in the interior of the corresponding sliding groove 36 towards the center of the clamping handle 35. The movement of the sliding seat 37 causes the radially adjacent clamping rod 36 to move towards the center of the clamping handle 35. The three clamping rods 36 achieve stable clamping of the GaN transistor.

[0028] The vacuum coating chamber 1 has four evenly distributed fixed posts 7 fixedly connected to its bottom wall. A fixed ring 8 is fixedly connected to the upper end of each of the four fixed posts 7. The outer surface of each fixed post 7 is slidably connected to the inner surface of the corresponding end of a clamping ring 9. Evenly distributed springs 10 are fixedly connected between the clamping ring 9 and the fixed ring 8. Each spring 10 is movably sleeved on the outer surface of radially adjacent fixed posts 7. A support ring 13 is fixedly connected to the lower end of each of the four fixed posts 7. A positive electrode 11 is provided at the left end of the bottom wall of the vacuum coating chamber 1. A negative electrode 12 is provided at the right end of the bottom wall. Both the positive electrode 11 and the negative electrode 12 are electrically connected to the output end of the control switch group 15. The target material is stably placed on the upper surface of the support ring 13. The upper end of the target material pushes the clamping ring 9. The clamping ring 9 moves upward under the guidance of the fixed column 7, which causes the spring 10 to be elastically compressed. The elastic force of the spring 10 reacts to the clamping ring 9. The clamping ring 9 and the support ring 13 work together to achieve stable clamping of the target material. At the same time, the lower end of the target material contacts the upper ends of the positive electrode 11 and the negative electrode 12.

[0029] The vacuum coating chamber 1 is equipped with a vacuum pump 14 at its lower end. A through hole is provided at the front end of the lower surface of the vacuum coating chamber 1. The through hole is connected to the vacuum pump 14 through a gas pipe. The input end of the vacuum pump 14 is electrically connected to the output end of the control switch group 15. The control switch group 15 enables the vacuum pump 14 to operate. The vacuum pump 14 continuously extracts the air inside the vacuum coating chamber 1 through the gas pipe and the through hole to create a vacuum environment. At the same time, the control switch group 15 enables the positive electrode 11 and the negative electrode 12 to operate. The positive electrode 11 and the negative electrode 12 introduce current into the target material, causing the target material to heat up under the action of the current. The components on its surface are evaporated in the form of atomic clusters or ions. The rotating GaN transistor comes into contact with the evaporated target material. The evaporated atomic clusters or ions then settle on the surface of the GaN transistor, thereby realizing the vacuum coating of the GaN transistor.

[0030] The working principle of the vacuum coating device for GaN transistor processing provided by this utility model is as follows: During operation, the operator first places the vacuum coating chamber 1, chamber cover 4, and other mechanisms stably in the horizontal working area. After stable placement, the operator first places the target material stably on the upper surface of the support ring 13. The upper end of the target material pushes the clamping ring 9, which moves upward under the guidance of the fixed column 7, thereby causing the spring 10 to be elastically compressed. The elastic force of the spring 10 reacts to the clamping ring 9. The clamping ring 9 and the support ring 13 work together to achieve stable clamping of the target material. At the same time, the lower end of the target material contacts the upper ends of the positive electrode 11 and the negative electrode 12. Then, the central axis of the GaN transistor to be coated is aligned with the central axis of the clamping handle 35, and the screw is rotated. The threaded cylinder 32 moves away from the center of the vacuum coating chamber 1 under the action of the radially adjacent external thread 31. Because the threaded cylinder 32 is internally rotatably connected to the radially adjacent adjusting ring 33, the adjusting ring 33 does not rotate with the threaded cylinder 32 under the limiting action of the connecting rod 34. The outward movement of the threaded cylinder 32 drives the radially adjacent adjusting ring 33 to move away from the center of the vacuum coating chamber 1. The outward movement of the adjusting ring 33 drives the corresponding end of the connecting rod 34 away from the center of the vacuum coating chamber 1 to move away from the center of the vacuum coating chamber 1. This causes the end of the connecting rod 34 near the center of the vacuum coating chamber 1 to pull the radially adjacent sliding seat 37. The sliding seat 37 moves within the corresponding sliding groove 36 towards the center of the clamping handle 35. The movement of seat 37 causes the radially adjacent clamping rods 36 to move towards the center of clamping handle 35. The three clamping rods 36 achieve stable clamping of the GaN transistor. After the clamping is stable, the operator stops rotating the threaded cylinder 32 and then places the clamping frame 25 inside the vacuum coating chamber 1. The ribs 5 slide inside the corresponding rib grooves 6. When the ribs 5 slide to the bottom of the corresponding rib grooves 6, the driven gears 27 mesh with the transmission gear ring. Then, the operator connects the chamber cover 4 to the upper end of the vacuum coating chamber 1 with bolts to close the vacuum coating chamber 1. Then, the operator starts the motor 21 by controlling the switch group 15. The output shaft of the motor 21 rotates, driving the drive shaft 22 to rotate. The drive shaft 22 drives the drive gear 23 to rotate, driving... Gear 23 drives the transmission gear ring 2 to rotate, which in turn drives the rotating ring 24 to rotate. The rotation of the rotating ring 24 drives the transmission gear ring 1 to rotate, which in turn drives the eight driven gears 27 to rotate synchronously. The rotation of the driven gears 27 drives the radially adjacent rotating shafts 26 to rotate. The rotation of the rotating shafts 26 drives the radially adjacent GaN transistors in the clamps to rotate. At the same time, the control switch group 15 controls the operation of the vacuum pump 14. The vacuum pump 14 continuously extracts the air from the vacuum coating chamber 1 through the air pipe and through hole to create a vacuum environment. At the same time, the control switch group 15 controls the operation of the positive electrode 11 and the negative electrode 12. The positive electrode 11 and the negative electrode 12 introduce current into the target material, causing the target material to heat up under the action of the current, causing the components on its surface to evaporate in the form of atomic groups or ions.The rotating GaN transistor comes into contact with the evaporated target material. The evaporated atomic clusters or ions then deposit onto the surface of the GaN transistor, thus achieving vacuum deposition of the GaN transistor.

[0031] It is worth noting that the vacuum pump 14 disclosed in the above embodiments can be an E2M80 vacuum pump, and the control switch group 15 is provided with control buttons that correspond one-to-one with the motor 21, positive electrode 11, negative electrode 12 and vacuum pump 14 and control their switching.

[0032] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the content of this utility model specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A vacuum coating apparatus for GaN transistor fabrication, characterized in that: It includes a vacuum coating chamber (1) and a clamping mechanism (3); Vacuum coating chamber (1): It is equipped with a rotating mechanism (2). The rotating mechanism (2) includes a rotating ring (24), a clamping frame (25), a rotating shaft (26), and a driven gear (27). The rotating ring (24) is rotatably connected to the upper end of the vacuum coating chamber (1). A transmission gear ring is fixedly connected to the upper end of the rotating ring (24). The clamping frame (25) is slidably connected to the upper end of the vacuum coating chamber (1). Eight rotating shafts (26) are evenly distributed inside the clamping frame (25). A driven gear (27) is fixedly connected to the end of the rotating shaft (26) away from the center of the vacuum coating chamber (1). All eight driven gears (27) are meshed with the transmission gear ring. Clamping mechanism (3): It is located at one end of the rotating shaft (26) near the center of the vacuum coating chamber (1).

2. The vacuum coating apparatus for GaN transistor processing according to claim 1, characterized in that: A control switch group (15) is provided on the left side of the vacuum coating chamber (1), and the input end of the control switch group (15) is electrically connected to an external power supply.

3. The vacuum coating apparatus for GaN transistor processing according to claim 2, characterized in that: The rotating mechanism (2) also includes a motor (21), a drive shaft (22) and a drive gear (23). The drive shaft (22) is rotatably connected to the left end of the vacuum coating chamber (1). The right end of the drive shaft (22) is fixedly connected to the drive gear (23). The lower end of the rotating ring (24) is fixedly connected to a transmission gear ring II, which meshes with the drive gear (23). The motor (21) is located at the left end of the vacuum coating chamber (1). The right end of the output shaft of the motor (21) is fixedly connected to the left end of the drive shaft (22). The input end of the motor (21) is electrically connected to the output end of the control switch group (15).

4. The vacuum coating apparatus for GaN transistor processing according to claim 1, characterized in that: The clamping mechanism (3) includes a clamping handle (35), a sliding groove (36), a sliding seat (37), and a clamping rod (38). The clamping handle (35) is fixedly connected to one end of the rotating shaft (26) near the center of the vacuum coating chamber (1). The sliding groove (36) is evenly arranged inside the clamping handle (35). The interior of the sliding groove (36) is slidably connected to the outer surface of the radially adjacent sliding seat (37). The end of the sliding seat (37) near the center of the vacuum coating chamber (1) is fixedly connected to the clamping rod (38).

5. The vacuum coating apparatus for GaN transistor processing according to claim 4, characterized in that: The clamping mechanism (3) further includes an external thread (31), a threaded cylinder (32), an adjusting ring (33), and a connecting rod (34). The external thread (31) is respectively disposed on the outer surface of the rotating shaft (26). The middle part of the external thread (31) is threadedly connected to the inner part of the radially adjacent threaded cylinder (32). The outer surface of the threaded cylinder (32) near the center of the vacuum coating chamber (1) is rotatably connected to the inner part of the radially adjacent adjusting ring (33). The inner part of the adjusting ring (33) is rotatably connected to evenly distributed connecting rods (34). The inner part of the connecting rod (34) near the center of the vacuum coating chamber (1) is rotatably connected to the inner part of the radially adjacent sliding seat (37) away from the center of the vacuum coating chamber (1).

6. The vacuum deposition apparatus for GaN transistor processing according to claim 2, characterized in that: The bottom wall of the vacuum coating chamber (1) is fixedly connected with four uniformly distributed fixed columns (7). The upper ends of the four fixed columns (7) are fixedly connected with fixed rings (8). The outer surfaces of the fixed columns (7) are all slidably connected to the interior of the corresponding ends of the clamping rings (9). The clamping rings (9) and the fixed rings (8) are fixedly connected with uniformly distributed springs (10). The springs (10) are all movably sleeved on the outer surfaces of the radially adjacent fixed columns (7). The lower ends of the four fixed columns (7) are fixedly connected with support rings (13). A positive electrode (11) is provided at the left end of the bottom wall of the vacuum coating chamber (1), and a negative electrode (12) is provided at the right end of the bottom wall of the vacuum coating chamber (1). Both the positive electrode (11) and the negative electrode (12) are electrically connected to the output end of the control switch group (15).

7. The vacuum coating apparatus for GaN transistor processing according to claim 1, characterized in that: The upper end of the inner wall of the vacuum coating chamber (1) is provided with uniformly distributed rib grooves (6), and the outer surface of the clamping frame (25) is fixedly connected with uniformly distributed rib blocks (5). The rib blocks (5) are all slidably connected to the radially adjacent rib grooves (6). The upper end of the vacuum coating chamber (1) is connected with a chamber cover (4) by uniformly distributed bolts.

8. The vacuum deposition apparatus for GaN transistor processing according to claim 2, characterized in that: A vacuum pump (14) is provided at the lower end of the vacuum coating chamber (1). A through hole is provided at the front end of the lower surface of the vacuum coating chamber (1). The through hole is connected to the vacuum pump (14) through a gas pipe. The input end of the vacuum pump (14) is electrically connected to the output end of the control switch group (15).

Images