Semiconductor electrostatic protection device

Abstract

The utility model belongs to the field of semiconductor technology especially for semiconductor electrostatic protection device, including protection device main part, the protection device main part one side fixedly connected with the welding piece, the protection device main part top is provided with the apron, is provided with the protection ring on the protection device main part, the protection ring inboard is provided with the fifth doped area, is provided with the deep pit area in the protection device main part, the deep pit area top is provided with the doped well area of conductive type, is provided with the conductive recess on the protection device main part, is provided with the first diode in the conductive recess, the first diode one side is provided with the second diode. The utility model discloses through setting up protection device main part and apron outer wall inner wall respectively by polycarbonate material and aluminium alloy material, can effectively promote its overall structure's insulation shielding performance, further promotes the outside interference effect, sets up aluminium alloy material through its inner wall simultaneously, can promote its overall structure's heat dissipation effect, prevents the temperature from being too high and easily causing damage to it.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, specifically to semiconductor electrostatic protection devices. Background Technology

[0002] A semiconductor is a material whose conductivity at room temperature falls between that of a conductor and an insulator. Matter exists in various forms, including solids, liquids, gases, and plasmas. Materials with poor conductivity, such as coal, artificial crystals, amber, and ceramics, are generally called insulators. Metals with good conductivity, such as gold, silver, copper, iron, tin, and aluminum, are called conductors. Materials that fall between conductors and insulators can be simply called semiconductors. Compared to conductors and insulators, semiconductors were discovered relatively recently. Their existence was not truly recognized by the academic community until the 1930s, when improvements in material purification techniques led to their widespread acceptance. Semiconductors are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, and high-power power conversion. For example, diodes are devices made using semiconductors. From both a technological and economic development perspective, the importance of semiconductors is immense. Most electronic products, such as computers, mobile phones, and digital recorders, rely heavily on semiconductors as their core components. Electrostatic discharge (ESD) protection devices are primarily used to protect electronic equipment, integrated circuits (ICs), and other sensitive components from damage caused by electrostatic discharge (ESD). Electrostatic discharge (ESD) can damage the internal structure of electronic components, leading to equipment failure or performance degradation. Therefore, effective ESD protection is an important aspect of electronic product design.

[0003] The existing technology has the following problems:

[0004] Existing semiconductor electrostatic discharge (ESD) protection devices have relatively simple structural designs. They are prone to high-temperature damage when subjected to strong electrical voltage surges during use, making it difficult to provide better protection for electronic components. Utility Model Content

[0005] In view of the shortcomings of the prior art, this utility model provides a semiconductor electrostatic discharge protection device to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, this utility model provides the following technical solution: a semiconductor electrostatic discharge (ESD) protection device, comprising a protection device body, a welding piece fixedly connected to one side of the protection device body, a cover plate provided on the top of the protection device body, a protective ring provided on the protection device body, a fifth doped region provided inside the protective ring, a deep trap region provided inside the protection device body, a conductive doped well region provided on the top of the deep trap region, a conductive groove provided on the protection device body, a first diode provided inside the conductive groove, and a second diode provided on one side of the first diode.

[0007] As a preferred embodiment of this utility model, two welding pieces are provided, and the welding pieces are evenly and symmetrically distributed on both sides of the main body of the protective device.

[0008] As a preferred embodiment of this utility model, both the cover plate and the outer wall of the protective device body are made of polycarbonate material, and their inner walls are made of aluminum alloy material.

[0009] As a preferred embodiment of this invention, the protective ring is disposed outside the fifth doped region, and the protective ring is made of aluminum alloy.

[0010] As a preferred embodiment of this invention, two conductive doped well regions are provided and symmetrically distributed at the bottom of the first diode and the second diode.

[0011] As a preferred technical solution of this utility model, the first diode includes a first doped region and a second doped region. The first doped region is disposed inside the first diode, and a second doped region is disposed on one side of the first doped region. Multiple first doped regions and multiple second doped regions are disposed, and they are distributed alternately inside the first diode.

[0012] As a preferred embodiment of the present invention, the second diode includes a third doped region and a fourth doped region. The third doped region is disposed inside the second diode, and the fourth doped region is disposed on one side of the third doped region. The third doped region and the fourth doped region are distributed alternately inside the second diode. The upper surfaces of the third doped region, the fourth doped region, the first doped region and the second doped region are all passivated and have an anti-reflective coating.

[0013] Compared with the prior art, the present invention provides a semiconductor electrostatic discharge protection device, which has the following beneficial effects:

[0014] 1. This semiconductor electrostatic discharge protection device, through the arrangement of a first diode, a second diode, a first doped region, a second doped region, a third doped region, a fourth doped region, and a fifth doped region, can effectively limit the intensity of the discharge current, preventing excessive current from damaging the components. It can also limit the voltage peak, preventing it from exceeding the device's withstand voltage range, thus facilitating effective protection of electronic components. By applying passivation treatment to the upper surface of the doped regions and providing an anti-reflective coating, defects on the surface of the doped regions can be reduced, improving the overall efficiency of the diodes. Furthermore, the first and second diodes are located inside conductive grooves, isolating them from the outside and preventing interference to external components.

[0015] 2. This semiconductor electrostatic protection device, by setting the main body of the protection device and the outer and inner walls of the cover plate to be made of polycarbonate and aluminum alloy respectively, can effectively improve the insulation and shielding performance of its overall structure, further enhancing the effect against external interference. At the same time, by setting the inner wall to aluminum alloy, the heat dissipation effect of its overall structure can be improved, preventing damage caused by excessive temperature. By setting the protective ring to be made of aluminum alloy, its overall structural stability can be improved, and the electrostatic conduction efficiency can also be improved, preventing electrostatic concentration. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the main structure of the protection device of this utility model;

[0017] Figure 2 This is a partial structural diagram of the main body of the protective device of this utility model;

[0018] Figure 3 This is a schematic cross-sectional view of the main body of the protective device of this utility model;

[0019] Figure 4 This is a schematic diagram of the overall structure of this utility model.

[0020] In the diagram: 1. Protective device body; 2. Welding piece; 3. Cover plate; 4. Protective ring; 5. Fifth doped region; 6. Deep trap region; 7. Doped well region of conductive type; 8. Conductive groove; 9. First diode; 901. First doped region; 902. Second doped region; 10. Second diode; 1001. Third doped region; 1002. Fourth doped region. Detailed Implementation

[0021] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0022] Please see Figure 1-4 In this embodiment: the semiconductor electrostatic discharge protection device includes a protection device body 1, a welding piece 2 fixedly connected to one side of the protection device body 1, a cover plate 3 provided on the top of the protection device body 1, a protective ring 4 provided on the protection device body 1, a fifth doped region 5 provided inside the protective ring 4, a deep trap region 6 provided inside the protection device body 1, a conductive doped well region 7 provided on the top of the deep trap region 6, a conductive groove 8 provided on the protection device body 1, a first diode 9 provided inside the conductive groove 8, and a second diode 10 provided on one side of the first diode 9.

[0023] Reference Figure 1 There are two welding pieces 2, which are evenly and symmetrically distributed on both sides of the main body 1 of the protective device;

[0024] Specifically: It facilitates the welding and installation of the main body 1 of the protection device, and improves the stability of installation and use.

[0025] Reference Figure 2 The outer walls of the cover plate 3 and the main body 1 of the protective device are both made of polycarbonate material, and their inner walls are both made of aluminum alloy material.

[0026] Specifically, it can improve its insulation and shielding performance, preventing easy interference to external electronic components.

[0027] Reference Figure 1 , Figure 2 and Figure 3 The protective ring 4 is located outside the fifth doped region 5 and is made of aluminum alloy.

[0028] Specifically, it can improve the overall structural stability and also enhance the electrostatic discharge efficiency, preventing electrostatic concentration.

[0029] Reference Figure 3Two conductive doped well regions 7 are provided and symmetrically distributed at the bottom of the first diode 9 and the second diode 10. The first diode 9 includes a first doped region 901 and a second doped region 902. The first doped region 901 is provided inside the first diode 9, and the second doped region 902 is provided on one side of the first doped region 901. Multiple first doped regions 901 and multiple second doped regions 902 are provided and are distributed alternately inside the first diode 9. The second diode 10 includes a third doped region 1001 and a fourth doped region 1002. The third doped region 1001 is provided inside the second diode 10, and the fourth doped region 1002 is provided on one side of the third doped region 1001. The third doped region 1001 and the fourth doped region 1002 are distributed alternately inside the second diode 10. The upper surfaces of the third doped region 1001, the fourth doped region 1002, the first doped region 901 and the second doped region 902 are all passivated and have an anti-reflective coating.

[0030] Specifically, it can improve the limitation of current and voltage, preventing damage to electronic components. By using passivation treatment on the upper surface of the doped region and setting an anti-reflective coating, it can reduce defects on the surface of the doped region and improve the overall efficiency of the diode.

[0031] The working principle and usage process of this utility model: When static electricity or a large voltage is generated inside the equipment during use, the first diode 9 and the second diode 10 inside the main body 1 of the protective device can be used to effectively limit the intensity of the discharge current, avoid excessive current impact damaging the components, and limit the voltage peak to prevent it from exceeding the device's withstand voltage range, thus facilitating effective protection of electronic components.

[0032] Finally, it should be noted that the above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A semiconductor electrostatic discharge (ESD) protection device, comprising a protection device body (1), characterized in that: A welding piece (2) is fixedly connected to one side of the main body (1) of the protective device. A cover plate (3) is provided on the top of the main body (1). A protective ring (4) is provided on the main body (1). A fifth doped region (5) is provided inside the protective ring (4). A deep pit region (6) is provided inside the main body (1). A conductive doped well region (7) is provided on the top of the deep pit region (6). A conductive groove (8) is provided on the main body (1). A first diode (9) is provided inside the conductive groove (8). A second diode (10) is provided on one side of the first diode (9).

2. The semiconductor electrostatic discharge protection device according to claim 1, characterized in that: Two welding pieces (2) are provided, and the welding pieces (2) are evenly and symmetrically distributed on both sides of the main body (1) of the protective device.

3. The semiconductor electrostatic discharge protection device according to claim 1, characterized in that: The outer walls of the cover plate (3) and the main body (1) of the protective device are both made of polycarbonate material, and their inner walls are both made of aluminum alloy material.

4. The semiconductor electrostatic discharge protection device according to claim 1, characterized in that: The protective ring (4) is disposed outside the fifth doped region (5), and the protective ring (4) is made of aluminum alloy material.

5. The semiconductor electrostatic discharge protection device according to claim 1, characterized in that: Two doped well regions (7) of the conductivity type are provided and are symmetrically distributed at the bottom of the first diode (9) and the second diode (10).

6. The semiconductor electrostatic discharge protection device according to claim 1, characterized in that: The first diode (9) includes a first doped region (901) and a second doped region (902). The first doped region (901) is disposed inside the first diode (9), and the second doped region (902) is disposed on one side of the first doped region (901). Multiple first doped regions (901) and second doped regions (902) are disposed, and they are distributed alternately inside the first diode (9).

7. The semiconductor electrostatic discharge protection device according to claim 1, characterized in that: The second diode (10) includes a third doped region (1001) and a fourth doped region (1002). The third doped region (1001) is disposed inside the second diode (10), and the fourth doped region (1002) is disposed on one side of the third doped region (1001). The third doped region (1001) and the fourth doped region (1002) are distributed alternately inside the second diode (10). The upper surfaces of the third doped region (1001), the fourth doped region (1002), the first doped region (901), and the second doped region (902) are all passivated and have an anti-reflective coating.

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