An integrated LED chip

Abstract

The application discloses an integrated LED chip, which comprises a substrate, a plurality of light emitting units, wherein the light emitting units are arranged on the substrate in an array; a negative electrode is arranged in an isolation groove formed by adjacent light emitting units, and a negative electrode is arranged at the edge of the substrate; the substrate is provided with a negative electrode pad connected with the negative electrode; and a positive electrode pad is arranged on the top of the light emitting unit. The integrated LED chip is a whole module, which is equivalent to a single chip and a circuit in the prior art, and has a simpler structure, does not need to additionally increase a circuit board, and can be directly attached to a radiator for use.

Description

Technical Field

[0001] This invention belongs to the field of LED chip technology, and specifically relates to an integrated LED chip. Background Technology

[0002] Current integrated LED chips require cutting out individual chips / modules and then transferring them to a circuit board via bonding, resulting in complex processes and structures. A high-heat-dissipation circuit board is needed at the bottom to electrically and thermally connect to the upper chip / module. The circuit design of the circuit board is complex and costly. Summary of the Invention

[0003] To overcome the above-mentioned technical defects, the present invention provides an integrated LED chip that can reduce costs.

[0004] To solve the above problems, the present invention is implemented according to the following technical solution:

[0005] An integrated LED chip includes: a substrate and several light-emitting units;

[0006] A plurality of the light-emitting units are arranged in an array on the substrate;

[0007] The adjacent light-emitting units form an isolation groove containing a negative electrode, as well as a negative electrode at the edge of the substrate;

[0008] The substrate is provided with a negative electrode pad connected to the negative electrode;

[0009] A positive electrode pad is provided on the top of the light-emitting unit.

[0010] As a further improvement of this utility model, the substrate includes: a substrate and a negative electrode emission layer disposed from bottom to top;

[0011] Several of the light-emitting units are disposed on the negative electrode emitting layer.

[0012] As a further improvement of this utility model, the light-emitting unit includes: the light-emitting unit arranged from bottom to top includes a multi-quantum well layer, a positive electrode emitting layer, and a transparent conductive layer arranged from bottom to top, wherein the multi-quantum well layer is attached to the negative electrode emitting layer.

[0013] As a further improvement of this utility model, the surfaces of the light-emitting unit and the substrate are further covered with a passivation layer, and the positive electrode pad and the negative electrode pad are exposed outside the passivation layer.

[0014] As a further improvement of this utility model, the width of the isolation groove is 5~100um.

[0015] As a further improvement of this utility model, the positive electrode pad and the negative electrode pad are made of Au, Pt, Cr or Al.

[0016] As a further improvement of this utility model, the passivation layer is made of SiO.

[0017] As a further improvement of this utility model, the negative electrode is covered with a layer of conductive metal.

[0018] As a further improvement of this utility model, the conductive metal is made of Au, Pt, Cr or Al.

[0019] Compared with the prior art, the present invention has the following advantages: The integrated LED chip of the present invention is a complete module, which is equivalent to "single chip + circuit" in the prior art. The structure is simpler, no additional circuit board is required, and it can be directly attached to the heat sink for use. Attached Figure Description

[0020] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, wherein:

[0021] Figure 1 This is a front view of the integrated LED chip described in this utility model;

[0022] Figure 2 This is a top view of the integrated LED chip described in this utility model;

[0023] Figure 3 This is a schematic diagram of the structure of the LED epitaxial wafer described in this utility model;

[0024] Figure 4 This is the main view of the integrated LED chip manufacturing process described in this utility model. Figure 1 ;

[0025] Figure 5 This is the main view of the integrated LED chip manufacturing process described in this utility model. Figure 2 ;

[0026] Figure 6 Top view of the integrated LED chip manufacturing process described in this utility model Figure 1 ;

[0027] Figure 7 This is the main view of the integrated LED chip manufacturing process described in this utility model. Figure 3 ;

[0028] Figure 8 Top view of the integrated LED chip manufacturing process described in this utility model Figure 2 ;

[0029] Figure 9 This is the main view of the integrated LED chip manufacturing process described in this utility model. Figure 4 ;

[0030] Figure 10 Top view of the integrated LED chip manufacturing process described in this utility model Figure 3 ;

[0031] Figure 11 This is the main view of the integrated LED chip manufacturing process described in this utility model. Figure 5 ;

[0032] Figure 12 Top view of the integrated LED chip manufacturing process described in this utility model Figure 4 .

[0033] Explanation of reference numerals in the attached figures: 1. LED epitaxial wafer; 11. Substrate; 12. Negative electrode emitting layer; 13. Multiple quantum well layer; 14. Positive electrode emitting layer; 2. Transparent conductive layer; 3. Light-emitting unit; 4. Isolation trench; 5. Negative electrode platform; 6. Negative electrode pad; 7. Positive electrode pad; 8. Negative electrode; 9. Passivation layer; 10. Negative electrode groove. Detailed Implementation

[0034] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0035] This utility model provides an integrated LED chip, such as Figure 1 and Figure 2 As shown, it includes: a substrate and a plurality of light-emitting units 3; the plurality of light-emitting units 3 are arranged in an array on the substrate; a negative electrode 8 is disposed in the isolation groove 4 formed by adjacent light-emitting units 3, and a negative electrode 8 is disposed at the edge of the substrate; the substrate is provided with a negative electrode pad 6 connected to the negative electrode 8; a positive electrode pad 7 is disposed on the top of the light-emitting unit 3.

[0036] In one embodiment, there are 6 light-emitting units 3 arranged in a 3×2 array on the substrate. The negative electrode pads 6 are disposed on the left and right sides of the substrate and on the left and right sides of the light-emitting units 3. The negative electrode 8 of the substrate is disposed on the upper and lower sides and is disposed on the outer side of the light-emitting units 3.

[0037] Furthermore, the substrate includes: a substrate 11 disposed from bottom to top, a negative emitting layer 12; and a plurality of light-emitting units 3 disposed on the negative emitting layer 12.

[0038] The light-emitting unit 3 includes: a multi-quantum well layer 13, a positive electrode emitting layer 14, and a transparent conductive layer 2 arranged from bottom to top. The positive electrode pad 7 is disposed on the transparent conductive layer 2. The multi-quantum well layer 13 is attached to the negative electrode emitting layer 12.

[0039] The surface of the light-emitting unit 3 and the substrate is also covered with a passivation layer 9, and the positive electrode pad 7 and the negative electrode pad 6 are exposed outside the passivation layer 9. The material of the passivation layer 9 is SiO, and the function of the passivation layer 9 is to achieve electrical isolation between the conductive metal of the negative electrode 8 and the multi-quantum well layer 13 and the positive electrode emitting layer 14.

[0040] The width of the isolation groove 4 is 5~100um.

[0041] The positive electrode pad 7 and the negative electrode pad 6 are made of Au, Pt, Cr or Al.

[0042] The negative electrode 8 is covered with a layer of conductive metal, which is made of Au, Pt, Cr or Al. The conductive metal is used to enhance the current spread of the negative electrode emitter layer 12.

[0043] The present invention will be further explained below in conjunction with the manufacturing method of the integrated LED chip:

[0044] S1. A transparent conductive layer 2 is deposited on the upper surface of the LED epitaxial wafer 1; wherein, the LED epitaxial wafer 1 includes: a substrate 11, a negative emitting layer 12, a multi-quantum well layer 13, and a positive emitting layer 14 bonded together from bottom to top, as shown below. Figure 3 As shown; that is, a transparent conductive layer 2 is deposited on the surface of the positive electrode emitting layer 14 of the LED epitaxial wafer 1; the material of the transparent conductive layer 2 is indium tin oxide, such as... Figure 4 As shown.

[0045] S2. Etching is performed on one side of the transparent conductive layer 2 to obtain several light-emitting units 3, isolation trenches 4, and a negative electrode platform 5. Specifically, the etching extends down to the negative electrode emitting layer 12. The width of the isolation trenches 4 is 5~100um, such as... Figure 5 and Figure 6 As shown.

[0046] S3. A positive electrode pad 7 is deposited on the light-emitting unit 3, and a negative electrode pad 6 is deposited on the negative electrode platform 5; the materials of the positive electrode pad 7 and the negative electrode pad 6 include Au, Pt, Cr, and Al, such as... Figure 7 and Figure 8 As shown.

[0047] S4. A passivation layer 9 is deposited on one side of the transparent conductive layer 2. The material of the passivation layer 9 is SiO. The function of the passivation layer 9 is to achieve electrical isolation between the conductive metal of the negative electrode 8 and the multiple quantum well layer 13 and the positive electrode emitter layer 14. Figure 9 and Figure 10 As shown.

[0048] S5. The passivation layer 9 covering the isolation trench 4 and the negative electrode platform 5 is etched to the upper surface of the negative electrode emitter layer, exposing the negative electrode emitter layer 12, thus obtaining the negative electrode groove 10. Figure 11 and Figure 12 As shown.

[0049] S6. A conductive metal for the negative electrode 8 is deposited within the negative electrode groove 10 to obtain the negative electrode 8. The conductive metal is made of at least one of Au, Pt, Cr, and Al. The conductive metal is used to enhance the current spread of the negative electrode emitter layer 12, ultimately resulting in the following: Figure 1 and Figure 2 The integrated LED chip shown.

[0050] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Therefore, any modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. An integrated LED chip, characterized in that, include: Substrate, several light-emitting units; A plurality of the light-emitting units are arranged in an array on the substrate; The adjacent light-emitting units form an isolation groove containing a negative electrode, as well as a negative electrode at the edge of the substrate; The substrate is provided with a negative electrode pad connected to the negative electrode; The top of the light-emitting unit is provided with a positive electrode pad.

2. The integrated LED chip according to claim 1, characterized in that, The substrate includes, from bottom to top, a substrate and a negative electrode emitting layer; Several of the light-emitting units are disposed on the negative electrode emitting layer.

3. The integrated LED chip according to claim 2, characterized in that, The light-emitting unit includes, from bottom to top, a multi-quantum well layer, a positive electrode emitting layer, and a transparent conductive layer, wherein the multi-quantum well layer is attached to the negative electrode emitting layer.

4. The integrated LED chip according to claim 1, characterized in that, The surfaces of the light-emitting unit and the substrate are further covered with a passivation layer, and the positive electrode pad and the negative electrode pad are exposed outside the passivation layer.

5. The integrated LED chip according to claim 1, characterized in that, The width of the isolation groove is 5~100um.

6. The integrated LED chip according to claim 1, characterized in that, The positive electrode pad and the negative electrode pad are made of Au, Pt, Cr or Al.

7. The integrated LED chip according to claim 4, characterized in that, The passivation layer is made of SiO.

8. The integrated LED chip according to claim 1, characterized in that, The negative electrode is covered with a layer of conductive metal.

9. The integrated LED chip according to claim 8, characterized in that, The conductive metal is made of Au, Pt, Cr, or Al.

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