Wafer inspection device and dry etching apparatus

By introducing a wafer inspection device into the dry etching equipment, real-time detection and alarm of the wafer status are realized, which solves the problems of low etching efficiency and low yield in the existing technology, and improves the operating efficiency of the equipment and the quality of products.

CN224329893UActive Publication Date: 2026-06-05SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
Filing Date
2025-04-25
Publication Date
2026-06-05

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  • Figure CN224329893U_ABST
    Figure CN224329893U_ABST
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Abstract

The application provides a wafer detection device and a dry etching equipment. The wafer detection device comprises a detection box, an image acquisition unit, an image processing unit and a vacuum mechanism. The detection box is provided with a detection cavity. The image acquisition unit is connected to the detection cavity and used for acquiring image information of a target wafer. The vacuum mechanism is communicated with the detection box and a gas lock chamber and used for vacuumizing the detection cavity and the gas lock chamber. After the target wafer is transmitted to the detection cavity, other chambers in the dry etching equipment can continue to perform etching operation on the wafer, so as to improve the etching efficiency of the wafer. After the image acquisition unit arranged in the detection cavity acquires the image information of the target wafer, the image information of the target wafer is transmitted to the image processing unit. The image processing unit is used for judging whether the target wafer meets a preset requirement or not and issuing an alarm information when the image information does not match preset image information, so as to complete the detection of the wafer and improve the yield of the wafer.
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Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a wafer inspection device and a dry etching equipment. Background Technology

[0002] Dry etching is a common etching process in integrated circuit manufacturing. Dry etching involves introducing a specific etching gas into the wafer surface, which is placed in a reaction chamber. Under specific conditions, the etching gas reacts chemically with the materials on the wafer surface, achieving the etching purpose. During the etching process, the wafer's condition is crucial. Issues such as wafer breakage, film peeling, or etching residue can severely affect product quality and even contaminate the equipment, resulting in batch yield losses.

[0003] When a wafer malfunctions, it is difficult for operators to observe the specific condition of the wafer through the external viewing window of the equipment. When the wafer is being etched in a dry etching equipment, if the wafer needs to be inspected, the corresponding transfer module needs to be opened for inspection and processing. At this time, other chambers in the equipment cannot continue to work, resulting in a reduction in the etching efficiency of the wafer. At the same time, if the wafer with defects is to continue etching, it will not only affect the wafer yield, but the broken pieces and detached film layers generated by the wafer will also cause contamination of the chambers in the equipment and the wafer. Utility Model Content

[0004] The purpose of this application is to provide a wafer inspection device and a dry etching equipment to solve the technical problem that existing dry etching equipment cannot perform timely inspection of wafers.

[0005] To achieve the above objectives, a first aspect of this application is to provide a wafer inspection apparatus connected to a gas lock chamber in a dry etching apparatus, comprising:

[0006] A detection box is connected to the airlock chamber, and the detection box is provided with a detection cavity;

[0007] An image acquisition unit, connected to the detection cavity, is used to acquire image information of the target wafer;

[0008] An image processing unit, electrically connected to the image acquisition unit, is used to receive the image information and compare the image information with preset image information, and to issue an alarm message when the image information does not match the preset image information.

[0009] A vacuum mechanism, connected to the detection chamber and the airlock chamber, is used to evacuate the detection cavity and the airlock chamber.

[0010] Optionally, there may be multiple image acquisition units, which are evenly distributed within the detection cavity.

[0011] Optionally, the image acquisition unit is an electrically coupled element.

[0012] Optionally, it also includes:

[0013] A display, electrically connected to the image processing unit, is used to display the image information.

[0014] Optionally, the vacuum mechanism includes:

[0015] Vacuum pump;

[0016] The first tube has one end connected to the vacuum pump and the other end connected to the detection box;

[0017] The second tube is connected at one end to the first tube and at the other end to the airlock chamber.

[0018] Optionally, the vacuum mechanism further includes:

[0019] A first valve is disposed on the first pipe body and located between the connection between the first pipe body and the second pipe body and the vacuum pump;

[0020] The second valve is installed on the first pipe body and is located between the connection between the first pipe body and the second pipe body and the detection box;

[0021] The third valve is installed on the second pipe body and is located between the second pipe body and the first pipe body at the connection point and the airlock chamber.

[0022] Optionally, it also includes:

[0023] A vacuum breaking mechanism, connected to the detection chamber and the airlock chamber, is used to inject gas into the detection chamber and the airlock chamber.

[0024] Optionally, the vacuum breaking mechanism includes:

[0025] The third tube is connected to the detection box;

[0026] The fourth tube is connected at one end to the third tube and at the other end to the airlock chamber.

[0027] Optionally, the vacuum breaking mechanism further includes:

[0028] The fourth valve is installed on the third pipe body;

[0029] The fifth valve is installed on the fourth pipe body and is located between the third pipe body and the fourth pipe body at the connection point and the detection box;

[0030] The sixth valve is installed on the fourth pipe body and is located between the fourth pipe body and the third pipe body at the connection point and the airlock chamber.

[0031] The beneficial effects of the wafer inspection device provided in this application are as follows: Compared with the prior art, the wafer inspection device provided in this application includes an inspection box, an image acquisition unit, an image processing unit, and a vacuum mechanism. The inspection box is equipped with an inspection cavity, and the image acquisition unit is connected to the inspection cavity to acquire image information of the target wafer. The vacuum mechanism is connected to the inspection box and the airlock chamber to evacuate the inspection cavity and the airlock chamber. After the target wafer is transferred to the inspection cavity, other chambers in the dry etching equipment can continue etching operations on the wafer, thereby improving the etching efficiency. After acquiring the image information of the target wafer, the image acquisition unit, located in the inspection cavity, transmits the image information to the image processing unit. The image processing unit receives the image information, compares it with preset image information, determines whether the target wafer meets preset requirements, and issues an alarm when the image information does not match the preset image information, thereby completing the wafer inspection and improving the wafer yield.

[0032] Secondly, this application provides a dry etching apparatus, comprising:

[0033] The transmission module is equipped with a vacuum chamber;

[0034] The etching cavity is connected to the transmission module and communicates with the vacuum cavity;

[0035] An airlock chamber is connected to the transmission module and communicates with the vacuum chamber;

[0036] A wafer inspection device is connected to the airlock chamber, and the wafer inspection device is any one of the wafer inspection devices described above;

[0037] A first transmission mechanism is disposed in the vacuum cavity and is used to transport the target wafer between the etching cavity, the gas lock chamber and the wafer inspection device.

[0038] The second transmission mechanism is located outside the transmission module and is used to transport the target wafer between the wafer cassette, the airlock chamber, and the wafer inspection device.

[0039] The beneficial effects of the dry etching equipment provided in this application are as follows: Compared with the prior art, the dry etching equipment provided in this application includes a transfer module, an etching chamber, a gas lock chamber, a wafer inspection device, a first transfer mechanism, and a second transfer mechanism. After the wafer is transported to the wafer inspection device by the first transfer mechanism or the second transfer mechanism, the transfer module, the etching chamber, and the gas lock chamber can all operate independently, thereby improving the etching efficiency of the wafer. At the same time, the wafer inspection device is used to determine whether the target wafer meets the preset requirements, and to issue an alarm message when the target wafer does not meet the preset requirements, thereby completing the inspection of the wafer and improving the wafer yield. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of the dry etching equipment provided in the embodiments of this application;

[0042] Figure 2 This is a schematic diagram of the structure of the detection box provided in an embodiment of this application.

[0043] The following are the labeling elements in the figure:

[0044] 10. Dry etching equipment; 11. Transmission module; 111. Vacuum chamber; 12. Gas lock chamber; 13. Etching chamber; 14. First transmission mechanism; 15. Second transmission mechanism; 20. Detection box; 21. Detection cavity; 30. Image acquisition unit; 40. Image processing unit; 41. Display; 50. Vacuum mechanism; 51. Vacuum pump; 52. First tube; 53. Second tube; 54. First valve; 55. Second valve; 56. Third valve; 60. Vacuum breaking mechanism; 61. Third tube; 62. Fourth tube; 63. Fourth valve; 64. Fifth valve; 65. Sixth valve. Detailed Implementation

[0045] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0046] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0047] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0048] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0049] Please refer to the following: Figure 1 and Figure 2 The wafer inspection device and dry etching equipment provided in the embodiments of this application will now be described.

[0050] The first aspect of this application is to provide a wafer inspection apparatus connected to the gas lock chamber 12 in a dry etching apparatus 10, which includes an inspection box 20, an image acquisition unit 30, an image processing unit 40, and a vacuum mechanism 50.

[0051] For details, please refer to Figure 1 and Figure 2 The detection box 20 is connected to the airlock chamber 12 and is located above the airlock chamber 12. The detection box 20 is provided with a detection cavity 21.

[0052] The image acquisition unit 30 is connected to the detection cavity 21 and is located at the top of the detection cavity 21. The image acquisition unit 30 is used to capture images of the target wafer to obtain image information of the target wafer.

[0053] The image processing unit 40 is electrically connected to the image acquisition unit 30. After the image acquisition unit 30 acquires the image information of the target wafer, it transmits the image information of the target wafer to the image processing unit 40. The image processing unit 40 receives the image information and compares it with preset image information, and issues an alarm message when the image information does not match the preset image information.

[0054] The vacuum mechanism 50 is connected to the detection chamber 20 and the airlock chamber 12, and is used to evacuate the detection chamber 21 and the airlock chamber 12.

[0055] Specifically, when an anomaly occurs in the etching chamber 13 and the target wafer needs to be inspected, the wafer can be transferred to the inspection chamber 21. The vacuum mechanism 50 operates to evacuate the inspection chamber 21. At this time, the image acquisition unit 30 obtains the image information of the target wafer. After the inspection of the target wafer is completed, if the image information of the target wafer matches the preset image information, the target wafer is transported to the etching chamber 13 or the gas lock chamber 12 to facilitate subsequent processing of the target wafer.

[0056] If the image information of the target wafer does not match the preset image information, making it impossible for the target wafer to undergo subsequent processes, the image processing unit 40 issues an alarm message, the vacuum mechanism 50 stops working to evacuate the detection chamber 21 and restores the detection chamber 21 to atmospheric conditions, and removes the target wafer that triggered the alarm message from the detection chamber 21 to prevent wafers that do not meet the preset requirements from entering the etching chamber 13, thereby avoiding contamination of the etching chamber 13.

[0057] During the above process, both the airlock chamber 12 and the etching chamber 13 are in operation.

[0058] When an anomaly occurs in the gas-lock chamber 12 and inspection is required, the gas-lock chamber 12 is brought to atmospheric pressure. The target wafer is then removed from the gas-lock chamber 12 and transported to the inspection chamber 21. After the target wafer is transferred to the inspection chamber 21, the vacuum mechanism 50 evacuates the inspection chamber 21, putting the gas-lock chamber 12 in a shutdown state. Subsequently, the image acquisition unit 30 acquires the image information of the target wafer, enabling the image processing unit 40 to assess the target wafer. After the inspection of the target wafer is completed, if the image information of the target wafer matches the preset image information, the target wafer is transported back to the gas-lock chamber 12, and the vacuum mechanism 50 evacuates the gas-lock chamber 12 to facilitate subsequent processing of the target wafer. If the image information of the target wafer does not match the preset image information, making it impossible for the target wafer to undergo subsequent processes, the image processing unit 40 issues an alarm message, the vacuum mechanism 50 stops working to evacuate the detection chamber 21 and restores the detection chamber 21 to atmospheric conditions, and removes the target wafer that triggered the alarm message from the detection chamber 21 to prevent wafers that do not meet the preset requirements from re-entering the airlock chamber 12, thereby avoiding contamination of the airlock chamber 12.

[0059] Compared with the prior art, the wafer inspection device provided in this application includes an inspection box 20, an image acquisition unit 30, an image processing unit 40, and a vacuum mechanism 50. The inspection box 20 is equipped with an inspection cavity 21. The image acquisition unit 30 is connected inside the inspection cavity 21 to acquire image information of the target wafer. The vacuum mechanism 50 is connected to the inspection box 20 and the gas lock chamber 12 to evacuate the inspection cavity 21 and the gas lock chamber 12. After the target wafer is transferred to the inspection cavity 21, the other chambers in the dry etching equipment 10 can... The wafer can continue to be etched, thereby improving the etching efficiency. After acquiring the image information of the target wafer, the image acquisition unit 30 located in the detection cavity 21 transmits the image information of the target wafer to the image processing unit 40. The image processing unit 40 receives the image information, compares the image information with preset image information, determines whether the target wafer meets the preset requirements, and issues an alarm when the image information does not match the preset image information, thereby completing the detection of the wafer and improving the wafer yield.

[0060] In this application, there are multiple image acquisition units 30, which are evenly distributed within the detection cavity 21.

[0061] For details, please refer to Figure 2 By setting up multiple image acquisition units 30, the speed and accuracy of acquiring target wafer image information can be improved.

[0062] In this application, the image acquisition unit 30 is an electrically coupled element.

[0063] By employing an electrically coupled element (CCD, Charge Coupled Device), the CCD has advantages such as high sensitivity, resistance to strong light, low distortion, small size, long lifespan, and vibration resistance when acquiring image information of the target wafer, thereby improving the accuracy of acquiring image information of the target wafer.

[0064] In this application, the wafer inspection device also includes a display 41.

[0065] Please see Figure 2 The display 41 is electrically connected to the image processing unit 40 and is used to display the image information of the target wafer acquired by the electrical coupling element.

[0066] In this application, the vacuum mechanism 50 includes a vacuum pump 51, a first tube 52, and a second tube 53.

[0067] For details, please refer to Figure 2 One end of the first tube 52 is connected to the vacuum pump 51, and the other end is connected to the detection box 20. One end of the second tube 53 is connected to the first tube 52, and the other end is connected to the airlock chamber 12.

[0068] When the vacuum pump 51 is started, it is used to evacuate the detection chamber 21 through the first tube 52 and to evacuate the airlock chamber 12 through the second tube 53.

[0069] In this application, the vacuum mechanism 50 also includes a first valve 54, a second valve 55, and a third valve 56. The first valve 54, the second valve 55, and the third valve 56 are all solenoid valves, and the first valve 54, the second valve 55, and the third valve 56 are all electrically connected to the control module in the dry etching equipment 10.

[0070] For details, please refer to Figure 2 The first valve 54 is disposed on the first pipe body 52 and is located between the first pipe body 52 and the second pipe body 53 and the vacuum pump 51.

[0071] The second valve 55 is disposed on the first pipe body 52 and located between the first pipe body 52 and the second pipe body 53 and the detection box 20, and is used to open or close the air passage between the detection chamber 21 and the vacuum pump 51.

[0072] The third valve 56 is disposed on the second pipe body 53 and is located between the second pipe body 53 and the first pipe body 52 and the airlock chamber 12, and is used to open or close the air passage between the airlock chamber 12 and the vacuum pump 51.

[0073] The first valve 54 is normally open. When the target needs to be inspected on the wafer, the inspection chamber 21 needs to be kept in a vacuum state. At this time, the second valve 55 is open so that the vacuum pump 51 can evacuate the inspection chamber 21.

[0074] When it is necessary to evacuate the airlock chamber 12, the third valve 56 is opened so that the vacuum pump 51 evacuates the airlock chamber 12.

[0075] It should be noted that, as needed, the second valve body or the third valve body can be opened separately to evacuate the detection chamber 21 or the airlock chamber 12 separately, or the second valve body or the third valve body can be opened simultaneously to evacuate the detection chamber 21 or the airlock chamber 12 simultaneously.

[0076] The wafer inspection apparatus also includes a vacuum breaking mechanism 60. The vacuum breaking mechanism 60 is connected to the inspection chamber 20 and the gas lock chamber 12 and is used to inject gas into the inspection chamber 21 and the gas lock chamber 12.

[0077] For details, please refer to Figure 2In this application, the vacuum breaking mechanism 60 includes a third tube 61, a fourth tube 62, a fourth valve 63, a fifth valve 64, and a sixth valve 65. The fourth valve 63, the fifth valve 64, and the sixth valve 65 are all solenoid valves, and the fourth valve 63, the fifth valve 64, and the sixth valve 65 are all electrically connected to the control module in the dry etching equipment 10.

[0078] The third tube 61 is connected to the detection chamber 20. One end of the fourth tube 62 is connected to the third tube 61, and the other end is connected to the airlock chamber 12. The fourth valve 63 is located on the third tube 61. The fifth valve 64 is located on the fourth tube 62, between the connection point of the third tube 61 and the fourth tube 62 and the detection chamber 20. The sixth valve 65 is located on the fourth tube 62, between the connection point of the fourth tube 62 and the third tube 61 and the airlock chamber 12.

[0079] The fourth valve 63 is normally open. When it is necessary to inject gas into the detection chamber 21 to make the gas pressure inside the detection chamber 21 equal to atmospheric pressure, the second valve 55 is closed and the fifth valve 64 is opened. When it is necessary to inject gas into the airlock chamber 12 to make the gas pressure inside the airlock chamber 12 equal to atmospheric pressure, the third valve 56 is closed and the sixth valve 65 is opened.

[0080] Secondly, this application provides a dry etching apparatus 10, including a transmission module 11, an airlock chamber 12, an etching cavity 13, a wafer inspection device, a first transmission mechanism 14, and a second transmission mechanism 15.

[0081] For details, please refer to Figure 1 The transmission module 11 is provided with a vacuum chamber 111. The etching chamber 13 is connected to the transmission module 11 and communicates with the vacuum chamber 111. There are multiple etching chambers 13, which are spaced apart along the circumference of the transmission module 11. The gas lock chamber 12 is connected to the transmission module 11 and communicates with the vacuum chamber 111.

[0082] The wafer inspection device is connected to the airlock chamber 12, and the wafer inspection device is any of the wafer inspection devices provided above.

[0083] The first transfer mechanism 14 is disposed inside the vacuum chamber 111 and is used to transfer the target wafer between the etching chamber 13, the gas lock chamber 12, and the wafer inspection device. The second transfer mechanism 15 is disposed outside the transfer module 11 and is used to transfer the target wafer between the wafer cassette, the gas lock chamber 12, and the wafer inspection device.

[0084] Specifically, both the first transmission mechanism 14 and the second transmission mechanism 15 are robotic arms.

[0085] In one embodiment of this application, please refer to Figure 1 and Figure 2Initially, the second transfer mechanism 15 transports the target wafer from the wafer cassette to the gas lock chamber 12. At this time, the gas lock chamber 12 is under atmospheric pressure. If the target wafer needs to be inspected, after closing the gas lock chamber 12, the sixth valve 65 in the wafer inspection device closes, the second valve 55 and the third valve open, and the fifth valve 64 and the sixth valve 65 close. The vacuum pump 51 draws a vacuum into the gas lock chamber 12. At this time, the gas lock chamber 12 is connected to the vacuum chamber 111, and the vacuum chamber 111 is connected to the detection chamber 21. The first transfer mechanism 14 transports the target wafer from the gas lock chamber 12 to the detection chamber 21 for inspection. Subsequently, the connection channels between the gas lock chamber 12, the detection chamber 21, and the vacuum chamber 111 are all disconnected. If the target wafer meets the preset requirements, the detection chamber 21 is connected to the vacuum chamber 111, and the first transfer mechanism 14 transports the target wafer to the etching chamber 13 for subsequent processes.

[0086] If the target wafer does not meet the preset requirements, the connection channel between the vacuum chamber 111 and the detection chamber 21 is disconnected so that the vacuum chamber 111 and the detection chamber 21 are independent of each other. Then the second valve 55 is closed and the fifth valve 64 is opened so that the detection chamber 21 is in an atmospheric pressure state. Then the detection chamber 21 is opened and the second transmission mechanism 15 removes the target wafer that triggered the alarm. During this process, the gas lock chamber 12 and the etching chamber 13 are in a shutdown state.

[0087] Alternatively, after the target wafer has been etched in the etching chamber 13, if it needs to be inspected, the vacuum chamber 111 is connected to the detection chamber 21. The first transfer mechanism 14 transports the target wafer to the detection chamber 21 for inspection. At this time, the vacuum chamber 111 is disconnected from the detection chamber 21. If the target wafer meets the preset requirements and needs to undergo subsequent processes in the dry etching equipment 10, the detection chamber 21 is connected to the vacuum chamber 111. The first transfer mechanism 14 transports the target wafer to another etching chamber 13 for subsequent processes. If the target wafer does not need to undergo subsequent processes in the dry etching equipment 10, the gas lock chamber 12 is connected to the vacuum chamber 111, and the vacuum mechanism 50 evacuates the gas lock chamber 12. The first transfer mechanism 14 transports the target wafer to the gas lock chamber 12 so that the second transfer mechanism 15 can transfer the target wafer to the wafer cassette before transporting it to other equipment for subsequent processes.

[0088] If the target wafer does not meet the preset requirements, the connection channel between the vacuum chamber 111 and the detection chamber 21 is disconnected so that the vacuum chamber 111 and the detection chamber 21 are independent of each other. Then the second valve 55 is closed and the fifth valve 64 is opened so that the detection chamber 21 is in an atmospheric pressure state. Then the detection chamber 21 is opened and the second transmission mechanism 15 takes out the target wafer that triggered the alarm.

[0089] Compared with the prior art, the dry etching equipment 10 provided in this application includes a transfer module 11, an etching chamber 13, a gas lock chamber 12, a wafer inspection device, a first transfer mechanism 14, and a second transfer mechanism 15. After the first transfer mechanism 14 or the second transfer mechanism 15 transports the wafer to the wafer inspection device, the transfer module 11, the etching chamber 13, and the gas lock chamber 12 can all operate independently, thereby improving the etching efficiency of the wafer. At the same time, the wafer inspection device is used to determine whether the target wafer meets the preset requirements and to issue an alarm message when the target wafer does not meet the preset requirements, thereby completing the inspection of the wafer and improving the wafer yield.

[0090] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A wafer inspection device, connected to the gas lock chamber in a dry etching apparatus, characterized in that, include: A detection box is connected to the airlock chamber, and the detection box is provided with a detection cavity; An image acquisition unit, connected to the detection cavity, is used to acquire image information of the target wafer; An image processing unit, electrically connected to the image acquisition unit, is used to receive the image information and compare the image information with preset image information, and to issue an alarm message when the image information does not match the preset image information. A vacuum mechanism, connected to the detection chamber and the airlock chamber, is used to evacuate the detection cavity and the airlock chamber.

2. The wafer inspection apparatus as described in claim 1, characterized in that, The number of image acquisition units is multiple, and the multiple image acquisition units are evenly distributed in the detection cavity.

3. The wafer inspection apparatus as described in claim 2, characterized in that, The image acquisition unit is an electrically coupled element.

4. The wafer inspection apparatus as described in claim 1 or 3, characterized in that, Also includes: A display, electrically connected to the image processing unit, is used to display the image information.

5. The wafer inspection apparatus as described in claim 4, characterized in that, The vacuum mechanism includes: Vacuum pump; The first tube has one end connected to the vacuum pump and the other end connected to the detection box; The second tube is connected at one end to the first tube and at the other end to the airlock chamber.

6. The wafer inspection apparatus as described in claim 5, characterized in that, The vacuum mechanism also includes: A first valve is disposed on the first pipe body and located between the connection between the first pipe body and the second pipe body and the vacuum pump; The second valve is installed on the first pipe body and is located between the connection between the first pipe body and the second pipe body and the detection box; The third valve is installed on the second pipe body and is located between the second pipe body and the first pipe body at the connection point and the airlock chamber.

7. The wafer inspection apparatus as described in claim 1, characterized in that, Also includes: A vacuum breaking mechanism, connected to the detection chamber and the airlock chamber, is used to inject gas into the detection chamber and the airlock chamber.

8. The wafer inspection apparatus as described in claim 7, characterized in that, The vacuum breaking mechanism includes: The third tube is connected to the detection box; The fourth tube is connected at one end to the third tube and at the other end to the airlock chamber.

9. The wafer inspection apparatus as described in claim 8, characterized in that, The vacuum breaking mechanism also includes: The fourth valve is installed on the third pipe body; The fifth valve is installed on the fourth pipe body and is located between the third pipe body and the fourth pipe body at the connection point and the detection box; The sixth valve is installed on the fourth pipe body and is located between the fourth pipe body and the third pipe body at the connection point and the airlock chamber.

10. A dry etching apparatus, characterized in that, include; The transmission module is equipped with a vacuum chamber; The etching cavity is connected to the transmission module and communicates with the vacuum cavity; An airlock chamber is connected to the transmission module and communicates with the vacuum chamber; A wafer inspection device is connected to the airlock chamber, wherein the wafer inspection device is the wafer inspection device according to any one of claims 1-9; A first transmission mechanism is disposed in the vacuum cavity and is used to transport the target wafer between the etching cavity, the gas lock chamber and the wafer inspection device. The second transmission mechanism is located outside the transmission module and is used to transport the target wafer between the wafer cassette, the airlock chamber, and the wafer inspection device.