Interconnection device of pulsed laser deposition and molecular beam epitaxy and coating equipment
By designing an interconnection device for pulsed laser deposition and molecular beam epitaxy, and using a transfer chamber and valves to connect the sample transfer components, the interconnection of samples in a vacuum environment was achieved. This solved the problem of coating effect when samples are interconnected between different systems, and improved production efficiency and material properties.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHENZHEN ARRAYED MATERIALS TECH CO LTD
- Filing Date
- 2025-04-28
- Publication Date
- 2026-06-09
AI Technical Summary
Traditional pulsed laser deposition and molecular beam epitaxy systems are single-cavity systems. When samples are interconnected between different systems, they need to be exposed to air, which affects the coating effect.
Design an interconnection device for pulsed laser deposition and molecular beam epitaxy. The pulsed laser deposition structure and the molecular beam epitaxy structure are connected through a transfer chamber and valves. The sample is transported in a vacuum environment using a sample transfer component to achieve interconnection between the two.
This technology enables effective interconnection between pulsed laser deposition and molecular beam epitaxy, improving the production efficiency of the doping process, forming thin films co-doped with different materials, and enhancing material properties and functional effects.
Smart Images
Figure CN224337690U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of interconnection devices and coating equipment for pulsed laser deposition and molecular beam epitaxy. Background Technology
[0002] Pulsed laser deposition (PLD), also known as pulsed laser ablation (PLA), is a technique that uses a laser to bombard an object and then deposits the bombarded material onto different substrates to obtain a precipitate or thin film. It is used to prepare semiconductor materials, deposit complex oxide thin films, synthesize new high-temperature superconducting materials, ferroelectric materials, electro-optic and optical materials, transparent conductive oxides, functional ceramics, nanoparticles, ferromagnetic materials, and other thin film materials.
[0003] Molecular beam epitaxy (MBE) is a physical deposition method for single-crystal thin films and a special type of vacuum deposition process. MBE involves growing thin films layer by layer along the crystal axis of a substrate material under suitable substrate conditions. The advantages of this technique are: low substrate temperature, slow film growth rate, easy and precise control of beam current intensity, and rapid adjustment of film composition and doping concentration with changes in the source. This technique has been used to prepare single-crystal thin films down to tens of atomic layers, as well as ultrathin quantum microstructure materials formed by alternating growth of films with different compositions and dopants.
[0004] Currently, many materials require co-doping in different coating process environments to achieve better material properties and functional effects. The coating process described in this article can be understood as the process of forming a thin film, also known as a film formation process.
[0005] However, traditional PLD and MBE are single-chamber systems. If the sample, i.e. the product to be coated, needs to be interconnected in different systems, the sample can only be taken out separately and then put into another system. This will cause the sample to come into contact with air, which will react with the material coated on the sample surface, thus affecting the material's performance and the coating effect of the sample.
[0006] Therefore, a device that can interconnect PLD and MBE is needed. Utility Model Content
[0007] Therefore, it is necessary to provide an interconnection device and coating equipment for pulsed laser deposition and molecular beam epitaxy.
[0008] One embodiment of this application is an interconnection device for pulsed laser deposition and molecular beam epitaxy, comprising a pulsed laser deposition structure, a molecular beam epitaxy structure, a transfer chamber, a sample transfer assembly, a first valve, and a second valve;
[0009] The pulsed laser deposition structure is connected to the transfer chamber via the first valve;
[0010] The molecular beam epitaxy structure is connected to the transfer chamber via the second valve;
[0011] The input end of the vacuum pump is connected to the transfer chamber and is used to evacuate the transfer chamber.
[0012] The sample transfer assembly is used to transport a sample between the pulsed laser deposition structure and the transfer chamber when the first valve is open and the second valve is closed, and to transport a sample between the molecular beam epitaxy structure and the transfer chamber when the second valve is open and the first valve is closed.
[0013] The aforementioned interconnection device for pulsed laser deposition and molecular beam epitaxy (MBE) utilizes the coordination of the pulsed laser deposition structure, the MBE structure, and the transfer chamber. This allows samples in the transfer chamber to enter and exit the pulsed laser deposition structure through a first valve and the MBE structure through a second valve, without interference between the two structures. Furthermore, the design of the sample transfer component ensures that the transfer operation can proceed without breaking the vacuum. This achieves effective interconnection between pulsed laser deposition and MBE, and improves the production efficiency of the doping process. It also facilitates the separate execution of different coating processes, such as pulsed laser deposition and MBE, to form thin films co-doped with different materials, thereby achieving better material properties and functional effects.
[0014] In some embodiments, the sample transfer assembly includes a first sample transfer assembly and a second sample transfer assembly;
[0015] The first sample transfer assembly is used to transport the sample from the transfer chamber to the pulsed laser deposition structure and from the pulsed laser deposition structure to the transfer chamber when the first valve is open and the second valve is closed.
[0016] The second sample transfer assembly is used to transport the sample from the transfer chamber to the molecular beam epitaxy structure and from the molecular beam epitaxy structure to the transfer chamber when the second valve is open and the first valve is closed.
[0017] In some embodiments, both the first and second sample delivery components transport the sample in a linear transport manner; or...
[0018] Both the first and second sample transfer components are magnetic rods, which are used to flip, extend, grasp, and release the sample in a vacuum environment.
[0019] In some embodiments, the first sample transfer assembly and the second sample transfer assembly have the same axial direction or telescopic direction.
[0020] In some embodiments, the interconnection device between pulsed laser deposition and molecular beam epitaxy further includes a first chamber and a second chamber;
[0021] The pulsed laser deposition structure is housed in the first chamber, and the first chamber is connected to the transfer chamber via the first valve.
[0022] The molecular beam epitaxy structure is housed in the second chamber, and the second chamber is connected to the transfer chamber via the second valve.
[0023] In some embodiments, the interconnection device for pulsed laser deposition and molecular beam epitaxy further includes a vacuum pump, the input of which is connected to the pulsed laser deposition structure, the molecular beam epitaxy structure, and the transfer chamber, respectively, for evacuating the pulsed laser deposition structure, the molecular beam epitaxy structure, and the transfer chamber.
[0024] In some embodiments, the first valve and the second valve are linked so that the first valve and the second valve are in one of the following states: the first valve is open and the second valve is closed, the second valve is open and the first valve is closed, and the first valve is closed and the second valve is closed.
[0025] In some embodiments, a coating apparatus includes a sample transport structure and an interconnection device for pulsed laser deposition and molecular beam epitaxy as described in any embodiment;
[0026] The sample delivery structure is used to deliver the sample into the transfer chamber.
[0027] In some embodiments, the sample delivery structure is a smart robotic arm, a mechanical gripper, or a conveyor belt, which is used to deliver the sample to the transfer chamber by clamping or negative pressure adsorption.
[0028] In some embodiments, the coating apparatus further includes a housing, in which the sample transport structure and the interconnection device between pulsed laser deposition and molecular beam epitaxy are disposed.
[0029] In some embodiments, the coating apparatus further includes a frame on which the sample transport structure and the interconnection device between pulsed laser deposition and molecular beam epitaxy are disposed. Attached Figure Description
[0030] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0031] Figure 1 This is a schematic diagram of an embodiment of the interconnection device for pulsed laser deposition and molecular beam epitaxy described in this application.
[0032] Figure 2 for Figure 1 Another schematic diagram of the embodiment shown.
[0033] Figure 3 This is a schematic diagram of another embodiment of the interconnection device for pulsed laser deposition and molecular beam epitaxy described in this application.
[0034] Figure 4 This is a schematic diagram of an embodiment of the coating equipment described in this application.
[0035] Reference numerals: 100 interconnection device for pulsed laser deposition and molecular beam epitaxy, 110 pulsed laser deposition structure, 120 molecular beam epitaxy structure, 130 transfer chamber, 140 sample transfer assembly, 141 first sample transfer assembly, 142 second sample transfer assembly, 143 axial direction, 150 first valve, 160 second valve, 170 vacuum pump, 180 first chamber, 190 second chamber, 200 sample transport structure, 300 outer shell, 400 frame, 900 coating equipment. Detailed Implementation
[0036] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0037] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on the other component or there may be an intermediate component. When a component is considered to be "connected to" another component, it can be directly connected to the other component or there may be an intermediate component present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application's specification are for illustrative purposes only and do not represent the only possible implementation.
[0038] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0039] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature and the second feature are in indirect contact through an intermediate medium. Furthermore, "above," "over," and "on top" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0040] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and or" as used in this application includes any and all combinations of one or more of the associated listed items.
[0041] This application discloses an interconnection device and coating equipment for pulsed laser deposition and molecular beam epitaxy, which includes some or all of the technical features of the following embodiments; that is, the interconnection device and coating equipment for pulsed laser deposition and molecular beam epitaxy include some or all of the following structures. In one embodiment of this application, an interconnection device for pulsed laser deposition and molecular beam epitaxy includes a pulsed laser deposition structure, a molecular beam epitaxy structure, a transfer chamber, a sample transfer assembly, a first valve, and a second valve; the pulsed laser deposition structure and the transfer chamber are connected through the first valve; the molecular beam epitaxy structure and the transfer chamber are connected through the second valve; the sample transfer assembly is used to transport a sample between the pulsed laser deposition structure and the transfer chamber when the first valve is open and the second valve is closed, and to transport a sample between the molecular beam epitaxy structure and the transfer chamber when the second valve is open and the first valve is closed. The aforementioned interconnection device for pulsed laser deposition and molecular beam epitaxy (MBE) utilizes the coordination of the pulsed laser deposition structure, the MBE structure, and the transfer chamber. This allows samples in the transfer chamber to enter and exit the pulsed laser deposition structure via a first valve, and also via a second valve via the MBE structure. Furthermore, the pulsed laser deposition and MBE structures do not interfere with each other. Combined with the design of the sample transfer component, the transfer operation can be performed without breaking the vacuum. Therefore, effective interconnection between pulsed laser deposition and MBE is achieved, and the production efficiency of the doping process is improved. This facilitates the separate execution of different coating processes, such as pulsed laser deposition and MBE, to form thin films co-doped with different materials, thereby achieving better material properties and functional effects. The following section will further elaborate on this concept. Figures 1 to 4 The interconnection device between pulsed laser deposition and molecular beam epitaxy is described in detail.
[0042] In some embodiments, an interconnection device 100 for pulsed laser deposition and molecular beam epitaxy is as follows: Figure 1As shown, it includes a pulsed laser deposition structure 110, a molecular beam epitaxy structure 120, a transfer chamber 130, a sample transfer assembly 140, a first valve 150, and a second valve 160. The pulsed laser deposition structure 110 and the transfer chamber 130 are connected via the first valve 150; the molecular beam epitaxy structure 120 and the transfer chamber 130 are connected via the second valve 160. The sample transfer assembly 140 is used to transport samples between the pulsed laser deposition structure 110 and the transfer chamber 130 when the first valve 150 is open and the second valve 160 is closed, and to transport samples between the molecular beam epitaxy structure 120 and the transfer chamber 130 when the second valve 160 is open and the first valve 150 is closed. This structural design, through the cooperation of the pulsed laser deposition structure 110, the molecular beam epitaxy structure 120, and the transfer chamber 130, allows the sample in the transfer chamber 130 to enter and exit the pulsed laser deposition structure 110 through the first valve 150, and to enter and exit the molecular beam epitaxy structure 120 through the second valve 160. Furthermore, the pulsed laser deposition structure 110 and the molecular beam epitaxy structure 120 do not interfere with each other. Combined with the design of the sample transfer component 140, the transfer operation can be performed without breaking the vacuum. Therefore, effective interconnection between pulsed laser deposition and molecular beam epitaxy is achieved, and the production efficiency of the doping process is improved. This facilitates the separate performance of different coating processes, such as pulsed laser deposition and molecular beam epitaxy, to form thin films co-doped with different materials, thereby achieving better material properties and functional effects.
[0043] In each embodiment, the pulsed laser deposition structure 110 and the transfer chamber 130 are connected via the first valve 150. The pulsed laser deposition structure 110 can also be referred to as a pulsed laser deposition system, and the transfer chamber 130 is used for sample placement and transfer. As an example, the first valve 150 is an electrically controlled valve. The specific control board and connecting lines can be purchased directly or made in-house. This application does not impose additional restrictions on this, and will not be elaborated further below. The first valve 150 can be opened or closed independently to connect or disconnect the pulsed laser deposition structure 110 and the transfer chamber 130. As an example, in use, when the transfer chamber 130 is under vacuum and the pulsed laser deposition structure 110 is under vacuum (i.e., the inner cavity of the pulsed laser deposition structure 110 is under vacuum), the first valve 150 is opened, allowing the pulsed laser deposition structure 110 to connect to the transfer chamber 130 without breaking the vacuum. Furthermore, the pulsed laser deposition structure 110 is connected to the transfer chamber 130 via the first valve 150. Alternatively, with the second valve 160 between the molecular beam epitaxy structure 120 and the transfer chamber 130 open, the first valve 150 can be closed to isolate the pulsed laser deposition structure 110 from the transfer chamber 130. This achieves both interconnection between the pulsed laser deposition film formation method and the molecular beam epitaxy film formation method, and ensures that the pulsed laser deposition film formation method and the molecular beam epitaxy film formation method do not interfere with each other.
[0044] In various embodiments, the molecular beam epitaxy structure 120 and the transfer chamber 130 are connected via the second valve 160; the molecular beam epitaxy structure 120 can also be referred to as a molecular beam epitaxy system. Similarly, as an example, the second valve 160 is an electrically controlled valve; the specific control board and connecting wiring can be purchased directly or made in-house. The second valve 160 can be opened or closed independently to connect or disconnect the molecular beam epitaxy structure 120 and the transfer chamber 130. As an example, in use, when the transfer chamber 130 is under vacuum and the molecular beam epitaxy structure 120 is under vacuum (i.e., the inner cavity of the molecular beam epitaxy structure 120 is under vacuum), the second valve 160 is opened, allowing the molecular beam epitaxy structure 120 to connect to the transfer chamber 130 without breaking the vacuum. Similarly, the molecular beam epitaxy structure 120 is connected to the transfer chamber 130 via the second valve 160. Alternatively, when the first valve 150 between the pulsed laser deposition structure 110 and the transfer chamber 130 is open, the second valve 160 can be closed to isolate the molecular beam epitaxy structure 120 from the transfer chamber 130. This achieves both interconnection between the pulsed laser deposition method and the molecular beam epitaxy method and ensures that the pulsed laser deposition method and the molecular beam epitaxy method do not interfere with each other.
[0045] In various embodiments, the sample transfer assembly 140 is used to transport a sample between the pulsed laser deposition structure 110 and the transfer chamber 130 when the first valve 150 is open and the second valve 160 is closed; the sample transfer assembly 140 is also used to transport a sample between the molecular beam epitaxy structure 120 and the transfer chamber 130 when the second valve 160 is open and the first valve 150 is closed. In some embodiments, the first valve 150 and the second valve 160 are linked so that the first valve 150 and the second valve 160 are in one of the following states: the first valve 150 is open and the second valve 160 is closed, the second valve 160 is open and the first valve 150 is closed, or the first valve 150 is closed and the second valve 160 is closed. This structural design can achieve interconnection between pulsed laser deposition and molecular beam epitaxy, while ensuring that pulsed laser deposition and molecular beam epitaxy do not interfere with each other.
[0046] In various embodiments, the sample transfer assembly 140 may be one set of structural components or two sets of structural components. In some embodiments, such as Figure 2As shown, the sample transfer assembly 140 includes a first sample transfer assembly 141 and a second sample transfer assembly 142. The first sample transfer assembly 141 is used to transport the sample from the transfer chamber 130 to the pulsed laser deposition structure 110 and from the pulsed laser deposition structure 110 to the transfer chamber 130 when the first valve 150 is open and the second valve 160 is closed. The second sample transfer assembly 142 is used to transport the sample from the transfer chamber 130 to the molecular beam epitaxy structure 120 and from the molecular beam epitaxy structure 120 to the transfer chamber 130 when the second valve 160 is open and the first valve 150 is closed. This structural design allows for transfer operations without breaking the vacuum and facilitates sample transport between the pulsed laser deposition structure 110, the transfer chamber 130, and the molecular beam epitaxy structure 120, thus achieving effective interconnection between pulsed laser deposition and molecular beam epitaxy, thereby improving the production efficiency of the doping process.
[0047] Exemplarily, the pulsed laser deposition structure 110, the first valve 150, the transfer chamber 130, the second valve 160, and the molecular beam epitaxy structure 120 are linearly distributed. In some embodiments, both the first sample transfer assembly 141 and the second sample transfer assembly 142 transport the sample in a linear transmission manner. In some embodiments, the first sample transfer assembly 141 and the second sample transfer assembly 142 have the same axial direction 143 or extension direction. In some embodiments, both the first sample transfer assembly 141 and the second sample transfer assembly 142 are magnetic rods, which are used to flip, extend, grasp, and release the sample in a vacuum environment. This structural design facilitates rapid and precise sample transport between the pulsed laser deposition structure 110 and the transfer chamber 130, and between the molecular beam epitaxy structure 120 and the transfer chamber 130. It is understood that the magnetic rod is only an example of the sample transfer assembly 140 described in the various embodiments of this application and is not a limitation. Those skilled in the art can use a track and a robot to replace the magnetic rod to transport samples between the pulsed laser deposition structure 110 and the transfer chamber 130, and between the molecular beam epitaxy structure 120 and the transfer chamber 130.
[0048] In each embodiment, such as Figure 3As shown, the interconnection device 100 for pulsed laser deposition and molecular beam epitaxy can be connected to a vacuum pump 170. In some embodiments, the interconnection device 100 further includes a vacuum pump 170, the input of which is connected to the pulsed laser deposition structure 110, the molecular beam epitaxy structure 120, and the transfer chamber 130, respectively, for evacuating the pulsed laser deposition structure 110, the molecular beam epitaxy structure 120, and the transfer chamber 130. As an example, the input of the vacuum pump 170 is connected to the transfer chamber 130 for evacuating the transfer chamber 130; other embodiments follow the same principle and will not be described in detail. It is understood that the pulsed laser deposition structure 110 is provided with a pulsed laser deposition film forming device and an inner cavity for processing samples. The pulsed laser deposition structure 110 is also connected to a vacuum pump 170, which may be the same as or different from the one used to evacuate the inner cavity of the pulsed laser deposition film forming device, in order to maintain the vacuum level of the inner cavity of the pulsed laser deposition film forming device. Similarly, the molecular beam epitaxy structure 120 is provided with a molecular beam epitaxy film forming device and an inner cavity for processing samples. The molecular beam epitaxy structure 120 is also connected to a vacuum pump 170, which may be the same as or different from the one used to evacuate the inner cavity of the molecular beam epitaxy film forming device, in order to maintain the vacuum level of the inner cavity of the molecular beam epitaxy film forming device. This structural design facilitates the creation of a vacuum environment for the pulsed laser deposition structure 110, the molecular beam epitaxy structure 120, and the transfer chamber 130. When film deposition is required, the pulsed laser deposition structure 110 can be used alone for pulsed laser deposition, or the molecular beam epitaxy structure 120 can be used alone for molecular beam epitaxy. Furthermore, through the coordination of the pulsed laser deposition structure 110, the molecular beam epitaxy structure 120, and the transfer chamber 130, samples in the transfer chamber 130 can enter and exit the pulsed laser deposition structure 110 through the first valve 150 and the molecular beam epitaxy structure 120 through the second valve 160, allowing for different film deposition processes such as pulsed laser deposition and molecular beam epitaxy to form thin films co-doped with different materials. Moreover, the pulsed laser deposition structure 110 and the molecular beam epitaxy structure 120 do not interfere with each other during the separate film deposition process. With the design of the sample transfer component 140, the transfer operation can be performed without breaking the vacuum, thus achieving effective interconnection between pulsed laser deposition and molecular beam epitaxy.
[0049] The following is a specific application example. The sample is placed into the transfer chamber 130, and a vacuum is drawn. After reaching a certain vacuum state, the first valve 150 between the pulsed laser deposition structure 110 and the transfer chamber 130 is opened, and the sample is transferred to the pulsed laser deposition structure 110 through the first sample transfer assembly 141. The first valve 150 between the pulsed laser deposition structure 110 and the transfer chamber 130 is then closed. The sample is deposited on the pulsed laser deposition structure 110. After the deposition is completed, the first valve 150 between the pulsed laser deposition structure 110 and the transfer chamber 130 is opened, and the sample is transferred to the transfer chamber 130 through the first sample transfer assembly 141. The first valve 150 between the pulsed laser deposition structure 110 and the transfer chamber 130 is then closed. The molecular beam epitaxy structure is then opened. The second valve 160 between the molecular beam epitaxy structure 120 and the transfer chamber 130 transfers the sample to the molecular beam epitaxy structure 120 via the second sample transfer assembly 142. The second valve 160 between the molecular beam epitaxy structure 120 and the transfer chamber 130 is then closed, allowing the sample to undergo secondary coating on the molecular beam epitaxy structure 120. After coating is complete, the second valve 160 between the molecular beam epitaxy structure 120 and the transfer chamber 130 is opened, and the sample is transferred to the transfer chamber 130 via the second sample transfer assembly 142. The second valve 160 between the molecular beam epitaxy structure 120 and the transfer chamber 130 is then closed, and the vacuum pump 170 in the transfer chamber 130 is stopped to break the vacuum. The sample is then removed from the transfer chamber 130 and taken to the testing instrument for testing and characterization.
[0050] In some of these embodiments, such as Figure 3 As shown, the interconnection device 100 for pulsed laser deposition and molecular beam epitaxy further includes a first chamber 180 and a second chamber 190. The pulsed laser deposition structure 110 is housed in the first chamber 180, and the first chamber 180 is connected to the intermediate chamber 130 via the first valve 150. The molecular beam epitaxy structure 120 is housed in the second chamber 190, and the second chamber 190 is connected to the intermediate chamber 130 via the second valve 160. This structural design is beneficial for protecting the pulsed laser deposition structure 110, the molecular beam epitaxy structure 120, and the intermediate chamber 130. It also facilitates the production and assembly of the interconnection device 100 and the pulsed laser deposition and molecular beam epitaxy, and facilitates the separate transportation of the pulsed laser deposition structure 110, the molecular beam epitaxy structure 120, and the intermediate chamber 130, making on-site assembly easier.
[0051] In some embodiments, a coating apparatus 900, such as Figure 4As shown, it includes a sample transport structure 200 and an interconnection device 100 for pulsed laser deposition and molecular beam epitaxy as described in any embodiment; the sample transport structure 200 is used to transport the sample into the transfer chamber 130. In various embodiments herein, the coating equipment 900 can also be referred to as a film forming device. Since the interconnection device 100 for pulsed laser deposition and molecular beam epitaxy as described in any embodiment is used, the coating equipment 900 also has the beneficial technical effects of the interconnection device 100 for pulsed laser deposition and molecular beam epitaxy, which will not be elaborated here.
[0052] In some embodiments, the sample delivery structure 200 is a smart robotic arm, a mechanical gripper, or a conveyor belt. The smart robotic arm, the mechanical gripper, or the conveyor belt is used to transport the sample into the transfer chamber 130 by clamping or negative pressure adsorption. This structural design facilitates accurate sample delivery to the interconnecting device 100 for pulsed laser deposition and molecular beam epitaxy, and, in conjunction with a microprocessor or control device, enables automated process control.
[0053] In some embodiments, the coating apparatus 900 further includes a housing 300, within which the sample transport structure 200 and the interconnecting device 100 for pulsed laser deposition and molecular beam epitaxy are all housed. This structural design facilitates the overall transport or movement of the coating apparatus 900.
[0054] In some embodiments, the coating apparatus 900 further includes a frame 400, on which the sample transport structure 200 and the interconnection device 100 for pulsed laser deposition and molecular beam epitaxy are both mounted. This structural design facilitates the installation or placement of the various structural components of the interconnection device 100 for pulsed laser deposition and molecular beam epitaxy.
[0055] It should be noted that other embodiments of this application also include interconnection devices and coating equipment for pulsed laser deposition and molecular beam epitaxy formed by combining the technical features of the above embodiments.
[0056] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0057] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. Therefore, the patent protection scope of this application should be determined by the appended claims.
Claims
1. A device for interconnecting pulsed laser deposition and molecular beam epitaxy (100), characterized in that, It includes a pulsed laser deposition structure (110), a molecular beam epitaxy structure (120), a transfer chamber (130), a sample transfer assembly (140), a first valve (150), and a second valve (160). The pulsed laser deposition structure (110) is connected to the transfer chamber (130) via the first valve (150); The molecular beam epitaxy structure (120) and the transfer chamber (130) are connected by the second valve (160); The sample transfer assembly (140) is used to transport a sample between the pulsed laser deposition structure (110) and the transfer chamber (130) when the first valve (150) is open and the second valve (160) is closed, and to transport a sample between the molecular beam epitaxy structure (120) and the transfer chamber (130) when the second valve (160) is open and the first valve (150) is closed.
2. The interconnection device (100) for pulsed laser deposition and molecular beam epitaxy according to claim 1, characterized in that, The sample transfer assembly (140) includes a first sample transfer assembly (141) and a second sample transfer assembly (142). The first sample transfer assembly (141) is used to transport the sample from the transfer chamber (130) to the pulsed laser deposition structure (110) when the first valve (150) is open and the second valve (160) is closed, and to transport the sample from the pulsed laser deposition structure (110) to the transfer chamber (130). The second sample transfer assembly (142) is used to transport the sample from the transfer chamber (130) to the molecular beam epitaxy structure (120) when the second valve (160) is open and the first valve (150) is closed, and to transport the sample from the molecular beam epitaxy structure (120) to the transfer chamber (130).
3. The interconnection device (100) for pulsed laser deposition and molecular beam epitaxy according to claim 2, characterized in that, Both the first sample transfer assembly (141) and the second sample transfer assembly (142) transport the sample in a linear transmission manner; or, Both the first sample transfer assembly (141) and the second sample transfer assembly (142) are magnetic rods, which are used to flip, extend, grasp and release the sample in a vacuum environment.
4. The interconnection device (100) for pulsed laser deposition and molecular beam epitaxy according to claim 3, characterized in that, The first sample transfer assembly (141) and the second sample transfer assembly (142) have the same axial direction (143) or telescopic direction.
5. The interconnection device (100) for pulsed laser deposition and molecular beam epitaxy according to claim 1, characterized in that, It also includes a first chamber (180) and a second chamber (190); The pulsed laser deposition structure (110) is housed in the first chamber (180), and the first chamber (180) is connected to the transfer chamber (130) via the first valve (150); The molecular beam epitaxy structure (120) is housed in the second chamber (190), and the second chamber (190) is connected to the transfer chamber (130) via the second valve (160); Alternatively, the interconnection device (100) for pulsed laser deposition and molecular beam epitaxy may further include a vacuum pump (170), the input of which is connected to the pulsed laser deposition structure (110), the molecular beam epitaxy structure (120) and the transfer chamber (130) respectively, for evacuating the pulsed laser deposition structure (110), the molecular beam epitaxy structure (120) and the transfer chamber (130) respectively.
6. The interconnection device (100) for pulsed laser deposition and molecular beam epitaxy according to any one of claims 1 to 5, characterized in that, The first valve (150) and the second valve (160) are linked together so that the first valve (150) and the second valve (160) are in one of the following states: the first valve (150) is open and the second valve (160) is closed, the second valve (160) is open and the first valve (150) is closed, and the first valve (150) is closed and the second valve (160) is closed.
7. A coating apparatus (900), characterized in that, Includes a sample delivery structure (200) and an interconnection device (100) for pulsed laser deposition and molecular beam epitaxy as described in any one of claims 1 to 6. The sample delivery structure (200) is used to deliver the sample into the transfer chamber (130).
8. The coating equipment (900) according to claim 7, characterized in that, The sample transport structure (200) is an intelligent robotic arm, a mechanical claw, or a conveyor belt. The intelligent robotic arm, the mechanical claw, or the conveyor belt is used to transport the sample into the transfer chamber (130) by clamping or negative pressure adsorption.
9. The coating equipment (900) according to claim 7, characterized in that, It also includes an outer shell (300), in which the sample delivery structure (200) and the interconnection device (100) for pulsed laser deposition and molecular beam epitaxy are both disposed.
10. The coating equipment (900) according to claim 7, characterized in that, It also includes a frame (400), on which the sample transport structure (200) and the interconnection device (100) for pulsed laser deposition and molecular beam epitaxy are both disposed.