Magnetron sputtering gas distribution device and magnetron sputtering device

By designing a magnetron sputtering gas distribution device, the problem of uneven reaction atmosphere in the deposition area was solved, achieving uniform gas splitting and distribution, and improving sputtering efficiency and film quality.

CN224337696UActive Publication Date: 2026-06-09SHENZHEN KEHE SHENGYE TECHNOLOGY CO LTD +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
SHENZHEN KEHE SHENGYE TECHNOLOGY CO LTD
Filing Date
2025-07-21
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

In traditional magnetron sputtering technology, the reaction atmosphere has poor uniformity in the deposition area, resulting in poor film thickness and composition uniformity.

Method used

The device employs a magnetron sputtering gas distribution system, designed as a hollow tube or plate with multiple spaced exhaust holes. The gas flow rate is adjusted by adjusting bolts and through holes. Combined with independent airflow channels and inlet designs, it achieves uniform gas distribution.

Benefits of technology

It improves sputtering efficiency and film quality, ensures uniform gas distribution near the target, forms a more stable plasma, and enhances film uniformity and adhesion.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a kind of magnetron sputtering cloth gas device, it is hollow tubular or present plate, the surface of magnetron sputtering cloth gas device is equipped with multiple interval arranged exhaust hole, all or part exhaust hole is equipped with detachably connected adjusting bolt, adjusting bolt is equipped with the through hole of the length direction of adjusting bolt. The utility model further discloses a kind of magnetron sputtering device, the magnetron sputtering cloth gas device and magnetron sputtering device of the utility model are through adjusting bolt with through hole in exhaust hole, can delay the flow speed of gas, make it sufficient distribution, realize uniform cloth gas.
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Description

Technical Field

[0001] This utility model relates to the field of magnetron sputtering technology, and in particular to a magnetron sputtering gas distribution device and a magnetron sputtering apparatus. Background Technology

[0002] In the fabrication of thin films using magnetron sputtering, the uniformity of the reaction atmosphere in the deposition area is a key factor affecting the final coating performance, especially the film thickness and composition uniformity. This challenge is prevalent regardless of whether a fixed target, moving target, or rotating target is used. Traditional gas introduction devices typically employ a design with large apertures and shallow depths. This structural feature can lead to a problem: process gas molecules entering the introduction device cannot undergo sufficient multiple scattering and mixing before being introduced into the vacuum chamber. This directly results in an uneven spatial distribution of the reaction atmosphere introduced into the vacuum chamber, negatively impacting the quality characteristics of the prepared thin film. Utility Model Content

[0003] The main technical problem solved by this invention is to provide a magnetron sputtering gas distribution plate that solves the problem of uneven gas distribution.

[0004] To solve the above-mentioned technical problems, one technical solution adopted by this utility model is to provide a magnetron sputtering gas distribution device, which is in the shape of a hollow tube or a plate. The surface of the magnetron sputtering gas distribution device is provided with multiple spaced exhaust holes, and all or part of the exhaust holes are provided with detachably connected adjusting bolts. The adjusting bolts are provided with through holes that penetrate through the length direction of the adjusting bolts.

[0005] In some embodiments, the size of the through holes is inconsistent.

[0006] In some embodiments, the magnetron sputtering gas distribution device is plate-shaped, including an upper gas distribution plate and a lower gas distribution plate. The upper gas distribution plate has a groove on one side adjacent to the lower gas distribution plate to form an airflow channel. An exhaust hole is disposed through the lower gas distribution plate and communicates with the airflow channel. An adjusting bolt is disposed in the exhaust hole and connects the upper gas distribution plate and the lower gas distribution plate.

[0007] In some embodiments, the upper air distribution plate has an independent first airflow channel and a second airflow channel inside, the first airflow channel being located at the upper part of the upper air distribution plate and the second airflow channel being located at the lower part of the upper air distribution plate.

[0008] In some embodiments, the first airflow channel is used to receive external gas and to divide the gas into multiple parallel airflow paths through the internal channel structure. The airflow paths respectively constitute multiple segments of the first exhaust pipe that are arranged in a straight line and spaced apart from each other.

[0009] In some embodiments, the first airflow channel is provided with three air inlets for introducing external gas.

[0010] In some embodiments, the three air inlets include a central air inlet located in the middle and two side air inlets located on both sides; the gas introduced through the central air inlet is split to form four parallel airflow paths; the gas introduced through the two side air inlets is split to form two parallel airflow paths.

[0011] In some embodiments, the second airflow channel is used to receive external gas and to divide the gas into multiple parallel airflow paths through the internal channel structure. The airflow paths respectively constitute multiple segments of the second exhaust pipe that are arranged in a straight line and spaced apart from each other.

[0012] In some embodiments, the second airflow channel is provided with an air inlet for introducing external gas.

[0013] Based on the same concept, this utility model also provides a magnetron sputtering device, including the above-mentioned magnetron sputtering gas distribution plate.

[0014] The beneficial effects of this utility model are: This utility model provides a magnetron sputtering gas distribution device, which can slow down the gas flow rate by setting an adjusting bolt with a through hole in the exhaust hole, so as to fully distribute the gas and achieve uniform gas distribution. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of one embodiment of the magnetron sputtering anode of this utility model;

[0016] Figure 2 This is a schematic diagram of another perspective of an embodiment of the magnetron sputtering anode of this utility model;

[0017] Figure 3 This is a front view structural schematic diagram of an embodiment of the magnetron sputtering anode of this utility model;

[0018] Figure 4 This is a front view schematic diagram of the gas distribution plate of the magnetron sputtering anode of this utility model;

[0019] Figure 5 yes Figure 4 The diagram shows a three-dimensional structure of the air distribution plate, including the adjusting bolts.

[0020] Figure 6 This is a schematic diagram of the structure of the adjusting bolt of the magnetron sputtering anode of this utility model;

[0021] Figure 7 This is a three-dimensional structural schematic diagram of an embodiment of the magnetron sputtering gas distribution device of this utility model;

[0022] Figure 8 yes Figure 7 The diagram shows a cross-sectional structure of the magnetron sputtering gas distribution device. Detailed Implementation

[0023] To facilitate understanding of this utility model, a more detailed description is provided below with reference to the accompanying drawings and specific embodiments. The accompanying drawings show preferred embodiments of this utility model. However, this utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this utility model.

[0024] It should be noted that, unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. The term "and / or" as used in this specification includes any and all combinations of one or more of the associated listed items.

[0025] Please see Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the structure of one embodiment of the magnetron sputtering anode of this utility model. Figure 2 This is a schematic diagram of another perspective of an embodiment of the magnetron sputtering anode of this utility model. The magnetron sputtering anode of this embodiment includes a flange mounting plate 11, a gas distribution plate, and a protective cover 13. Water-cooling interfaces 14 are respectively provided at both ends of the flange mounting plate 11 for cooling the anode. An electrode 15 is provided between the two water-cooling interfaces 14 to provide electrical energy. The gas distribution plate is located on the side of the flange mounting plate 11 opposite to the water-cooling interfaces 14, forming an airflow channel. The protective cover 13 covers the gas distribution plate. Gas enters from the side of the gas distribution plate adjacent to the flange mounting plate 11 and flows out from the side of the gas distribution plate adjacent to the protective cover 13. This embodiment cleverly integrates the gas distribution function into the anode. Compared with the technical problems of low sputtering efficiency and poor film quality caused by the gas distribution method in the prior art, this embodiment achieves more precise gas supply to the sputtering area by cleverly integrating the gas distribution function into the anode body, thereby effectively improving the efficiency of the sputtering process and the quality of the obtained film.

[0026] Please refer to further details. Figure 3 and Figure 4 , Figure 3 This is a front view structural schematic diagram of an embodiment of the magnetron sputtering anode of this utility model; Figure 4This is a front view schematic diagram of the gas distribution plate of the magnetron sputtering anode of this utility model. The gas distribution plate has independent first airflow channel 16 and second airflow channel 17 formed inside. The first airflow channel 16 is located in the upper part of the gas distribution plate, and the second airflow channel 17 is located in the lower part of the gas distribution plate. Specifically, the gas distribution plate includes an upper gas distribution plate 121 and a lower gas distribution plate 122. The upper gas distribution plate 121 has a groove formed on the side adjacent to the lower gas distribution plate 122, and the lower gas distribution plate 122 covers the upper gas distribution plate 121. In this embodiment, it is preferable to provide the first airflow channel 16 and the second airflow channel 17 in the upper and lower parts of the gas distribution plate respectively. This method can improve the efficiency of gas flow. In other embodiments, airflow channels can also be selectively provided in the upper or lower parts of the gas distribution plate; this application does not limit this.

[0027] In some embodiments, the first airflow channel 16 is used to receive external gas and to divide the gas into multiple parallel airflow paths through an internal channel structure. The airflow paths respectively form multiple segments of first exhaust pipes 165 arranged in a straight line and spaced apart from each other.

[0028] In some embodiments, the first airflow channel 16 is provided with three air inlets for introducing external gas. By providing multiple air inlets, the gas flow efficiency can be improved. Of course, in other embodiments, other numbers of air inlets, such as two or four, can also be provided as appropriate.

[0029] In a specific instance, with Figure 4 Taking the structure as an example, in this instance, the three air inlets include a central air inlet 161 located in the middle and two side air inlets 162 located on both sides. The gas introduced through the central air inlet 161 is split into four parallel airflow paths. The gas introduced through the two side air inlets 162 is split into two parallel airflow paths. Specifically, the gas introduced from the central air inlet 161 undergoes two-stage splitting. The first-stage splitting forms two first-stage upper splitting channels 163, and the second-stage splitting forms two second-stage upper splitting channels 164 from both ends of the first-stage upper splitting channels 163. The gas introduced through the side air inlets 162 undergoes only one-stage splitting. The first exhaust pipe 165 formed in this way has a basically uniform length, which is beneficial for the even distribution of gas.

[0030] In some embodiments, the second airflow channel 17 is used to receive external gas and to divide the gas into multiple parallel airflow paths through the internal channel structure. The airflow paths respectively constitute multiple segments of second exhaust pipes 173 arranged in a straight line and spaced apart from each other.

[0031] In some embodiments, the second airflow channel 17 is provided with an air inlet for introducing external gas. This single air inlet, combined with an efficient flow-dividing design, simplifies external connections while ensuring gas uniformity. Of course, in other embodiments, two or three other numbers of air inlets may be provided as appropriate.

[0032] In some embodiments, the internal structure of the second airflow channel 17 is designed to split the gas introduced through the air inlet into four parallel airflow paths. Similarly, please refer to... Figure 4 In one example, the second airflow channel 17 has an air inlet. The gas introduced through this air inlet undergoes a two-stage splitting process. The first-stage splitting forms two first-stage lower splitting channels 171, and the second-stage splitting forms two second-stage lower splitting channels 172 from both ends of the first-stage lower splitting channels 171. The second exhaust pipe 173 formed in this manner has a substantially uniform length, which is beneficial for the even distribution of gas. In some embodiments, the length of the second exhaust pipe 173 is preferably greater than the length of the first exhaust pipe 165, and more preferably, the length of the second exhaust pipe 173 is approximately twice the length of the first exhaust pipe 165.

[0033] Furthermore, each section of the first exhaust pipe 165 and the second exhaust pipe 173 is provided with a plurality of exhaust holes for gas discharge at intervals on its surface. Please refer to the reference. Figure 5 and Figure 6 , Figure 5 yes Figure 4 The diagram shows a three-dimensional structure of the air distribution plate. Figure 6 This is a schematic diagram of the adjusting bolt 19 of the magnetron sputtering anode of this utility model. In this embodiment, the upper gas distribution plate 121 and the lower gas distribution plate 122 are connected by adjusting bolt 19. All or part of the exhaust holes are provided with adjusting bolt 19 for adjusting the gas. The adjusting bolt 19 has a through hole 20 extending through the length of the adjusting bolt 19. The uniformity of gas distribution can be adjusted by setting the adjusting bolt 19 to adapt to different working conditions. Furthermore, the size of the through hole 20 can be set to different dimensions to further adjust the gas output.

[0034] This application also includes a magnetron sputtering apparatus, which includes a cathode, a target, and the anode of the aforementioned embodiments.

[0035] The magnetron sputtering anode and the magnetron sputtering device integrating the anode of this utility model can effectively solve the problems of low sputtering efficiency and poor coating quality in existing gas distribution methods, and bring the following significant benefits:

[0036] Firstly, traditional gas distribution methods typically introduce gas from locations far from the target or sputtering area (such as the chamber wall, top, or bottom), resulting in long diffusion paths and difficulty in precisely controlling local concentrations. This embodiment, however, integrates the gas distribution function directly into the anode, allowing gas to be ejected directly from the target and sputtering area at close range through multiple parallel airflow paths via the internal channel structure of the gas distribution plate. This close-range, precise, and multi-point (through multiple exhaust pipes and vents) gas supply significantly improves the density and uniformity of the local working gas in the sputtering area, leading to more stable plasma formation and higher plasma density. Higher density and more stable plasma mean more active ions and neutral particles can participate in the sputtering process, thus significantly improving the efficiency of magnetron sputtering.

[0037] Secondly, because the gas can be supplied directly to the sputtering area in a more precise and uniform manner, this effectively avoids localized gas concentration unevenness or dead zones that may occur in traditional gas distribution methods. During thin film deposition, uniform gas distribution is crucial for controlling reactive sputtering (if reactive gases are used) or ensuring the uniformity of sputtered particles reaching the substrate. Precise flow distribution within the gas distribution plate's internal channels (e.g., splitting the central inlet into four paths, the side inlets into two paths, or a single inlet into four paths) ensures a highly consistent gas distribution throughout the entire distribution area. This precise and uniform gas environment allows particles sputtered from the target to deposit more evenly onto the substrate, while reactive gases participate in the reaction more uniformly, thus contributing to the formation of dense, uniform, well-adhered, and stable thin films. Therefore, this embodiment significantly improves the coating quality of the prepared thin film.

[0038] Please see Figure 7 and Figure 8 , Figure 7 This is a three-dimensional structural schematic diagram of an embodiment of the magnetron sputtering gas distribution device of this utility model. Figure 8 yes Figure 7 The diagram shows a cross-sectional view of the magnetron sputtering gas distribution device. In this embodiment, the magnetron sputtering gas distribution device 30 is a hollow tube with multiple spaced exhaust holes 60 on its surface. All or some of the exhaust holes 60 are equipped with detachably connected adjusting bolts 40. Each adjusting bolt 40 has a through hole 50 extending through its length. The size of the through hole 60 can be set to different dimensions. By adjusting the bolts 40, the gas flow rate can be slowed down, allowing for full distribution and achieving uniform gas distribution.

[0039] The above are merely embodiments of this utility model and do not limit the patent scope of this utility model. Any equivalent structural transformations made based on the description and drawings of this utility model, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A magnetron sputtering gas distribution device, characterized in that, The magnetron sputtering gas distribution device is in the shape of a hollow tube or a plate. The surface of the magnetron sputtering gas distribution device is provided with a plurality of spaced exhaust holes. All or some of the exhaust holes are provided with detachable adjusting bolts. The adjusting bolts are provided with through holes that extend through the length of the adjusting bolts.

2. The magnetron sputtering gas distribution device according to claim 1, characterized in that, The through holes are of inconsistent sizes.

3. The magnetron sputtering gas distribution device according to claim 2, characterized in that, The magnetron sputtering gas distribution device is plate-shaped, including an upper gas distribution plate and a lower gas distribution plate. The upper gas distribution plate has a groove on the side adjacent to the lower gas distribution plate to form an airflow channel. The exhaust hole is disposed through the lower gas distribution plate and communicates with the airflow channel. The adjusting bolt is disposed in the exhaust hole and connects the upper gas distribution plate and the lower gas distribution plate.

4. The magnetron sputtering gas distribution device according to claim 3, characterized in that, The upper air distribution plate has an independent first airflow channel and a second airflow channel inside. The first airflow channel is located at the upper part of the upper air distribution plate, and the second airflow channel is located at the lower part of the upper air distribution plate.

5. The magnetron sputtering gas distribution device according to claim 4, characterized in that, The first airflow channel is used to receive external gas and to divide the gas into multiple parallel airflow paths through the internal channel structure. The airflow paths respectively form multiple first exhaust pipes arranged in a straight line and spaced apart from each other.

6. The magnetron sputtering gas distribution device according to claim 5, characterized in that, The first airflow channel is provided with three air inlets for introducing the external gas.

7. The magnetron sputtering gas distribution device according to claim 6, characterized in that, The three air inlets include a central air inlet and two side air inlets on either side; the gas introduced through the central air inlet is split into four parallel airflow paths; the gas introduced through the two side air inlets is split into two parallel airflow paths.

8. The magnetron sputtering gas distribution device according to claim 7, characterized in that, The second airflow channel is used to receive external gas and to divide the gas into multiple parallel airflow paths through the internal channel structure. The airflow paths respectively form multiple segments of second exhaust pipes arranged in a straight line and spaced apart from each other.

9. The magnetron sputtering gas distribution device according to claim 8, characterized in that, The second airflow channel is provided with an air inlet for introducing the external gas.

10. A magnetron sputtering apparatus, characterized in that, The magnetron sputtering gas distribution device includes any one of claims 1-9.