Semiconductor photonic device
By employing a curved waveguide structure and optical coupling with a grating coupler in a semiconductor photonic device, the problem of damage to the waveguide structure caused by high-power optical signals is solved, achieving optical communication performance with high signal speed and high optical bandwidth.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-04-18
- Publication Date
- 2026-06-09
AI Technical Summary
When processing high-power optical signals, the waveguide structure of existing semiconductor photonic devices is easily damaged, leading to wear and failure, which affects the high-speed, high-bandwidth optical communication performance.
A curved waveguide structure is used for optical coupling with a grating coupler. The waveguide structure has a curved top view shape between the first and second ends, which restricts the propagation of crystal defects caused by high-power optical signals along the waveguide structure.
It effectively prevents waveguide structures from being damaged by high-power optical signals, enables high signal speed and high optical bandwidth optical communication, and supports high system link design.
Smart Images
Figure CN224341702U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to a semiconductor photonic device. Background Technology
[0002] Semiconductor photonic devices can be configured to use optical signals to achieve high-speed, high-bandwidth, and secure optical communication between integrated circuits and / or semiconductor dies of semiconductor photonic devices. Utility Model Content
[0003] According to some embodiments of this disclosure, a semiconductor photonic device is provided. The semiconductor photonic device includes a grating coupler. The semiconductor photonic device includes a waveguide structure, wherein a first end of the waveguide structure is optically coupled to the grating coupler, and the waveguide structure has a curved top-view shape between the first end and a second end opposite to the first end.
[0004] According to some embodiments of this disclosure, a semiconductor photonic device is provided. The semiconductor photonic device includes a grating coupler. The semiconductor photonic device includes a waveguide structure. The semiconductor photonic device includes an optical splitter, wherein a first curved segment of the waveguide structure is optically coupled to the grating coupler, and a second curved segment of the waveguide structure is optically coupled to the optical splitter.
[0005] According to some embodiments of this disclosure, a method includes forming a grating coupler in a semiconductor layer of a semiconductor photonic device. The method includes forming a waveguide structure such that the waveguide structure is optically coupled to the grating coupler at a first end of the waveguide structure, wherein the waveguide structure has an arcuate top-view shape between the first end and a second end opposite to the first end.
[0006] To make the above-described features and advantages of this disclosure more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description
[0007] The various aspects of this disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of explanation.
[0008] Figure 1A-1C A diagram illustrating an example of a semiconductor photonic device described in this article.
[0009] Figure 2A-2J A diagram illustrating an example embodiment of the semiconductor photonic device described herein.
[0010] Figure 3 A diagram illustrating an example of a semiconductor photonic device described in this article.
[0011] Figure 4A diagram illustrating an example of a semiconductor photonic device described in this article.
[0012] Figure 5 A diagram illustrating an example of a semiconductor photonic device described in this article.
[0013] Figure 6 This is a flowchart of an example process related to forming the semiconductor photonic device described herein.
[0014] Explanation of reference numerals in the attached figures
[0015] 100, 300, 400, 500: Semiconductor photonic devices
[0016] 102: Grating Coupler
[0017] 104: Waveguide Structure
[0018] 106: First End
[0019] 108: Second End
[0020] 110: Optical splitter
[0021] 112: Raster
[0022] 114: Input Port
[0023] 116: Main body
[0024] 118a, 118b: Output ports
[0025] 120: Substrate layer
[0026] 122, 124, 126, 128: Dielectric layers
[0027] 130: Input fiber optic cable
[0028] 132: Notch
[0029] 136: Basement
[0030] 138: Core Part
[0031] 140: First side
[0032] 142: Second side
[0033] 200: Example Implementation
[0034] 202: Substrate
[0035] 204: Semiconductor layer
[0036] 302: Semi-long shaft
[0037] 304: Geometric Center
[0038] 306: Semi-short shaft
[0039] 402: First curved section
[0040] 404: Second curved section
[0041] 406: Center point
[0042] 600: Process
[0043] D1, D2, D3, D4, D5, D6, D7, D8, D9, D10: Dimensions Detailed Implementation
[0044] The following disclosure provides several different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and arrangements are described below to simplify this disclosure. Of course, these elements and arrangements are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments where the first and second features are formed in direct contact, and may further include embodiments where additional features may be formed between the first and second features such that the first and second features are not in direct contact. Additionally, reference numerals and / or letters may be repeated in various instances of this disclosure. Such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.
[0045] Furthermore, for ease of description, spatially related terms such as “below,” “under,” “lower,” “above,” “upper,” etc., may be used herein to describe the relationship between one element or feature and another element or feature as shown in the figures. In addition to the orientations depicted in the figures, spatially related terms are intended to cover different orientations of the device in use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly. The terms “first,” “second,” “third,” “fourth,” etc., are merely general designations and are therefore interchangeable in various embodiments. For example, while an element (e.g., an opening) may be referred to as a “first” element in some embodiments, it may be referred to as a “second” element in other embodiments.
[0046] In some cases, semiconductor photonic devices may include grating couplers and waveguide structures that couple input optical signals from the grating coupler to another photonic structure within the semiconductor photonic device (e.g., a splitter structure, a modulator structure, or a photodetector structure). To enable semiconductor photonic devices to operate at high signal speeds and high optical bandwidths, the grating coupler may be configured to receive high-power optical signals (e.g., high-power laser signals). While using high-power optical signals allows semiconductor photonic devices to achieve optical communication with high system link budgets, excessively high power levels can damage the crystal structure of the waveguide. Therefore, using high-power optical signals in semiconductor photonic devices can lead to accelerated wear and / or failure of the waveguide structure.
[0047] In some embodiments described herein, the semiconductor photonic device includes a curved waveguide structure (e.g., a waveguide structure with a curved top view shape) optically coupled to a grating coupler for receiving high-power optical signals. The curvature of the waveguide structure resists the concentration of optical power in certain regions within the waveguide structure, enabling the waveguide structure to handle high-power optical signals without (or with minimal possibility) being damaged by them. This allows the waveguide structure to support and facilitate high signal speeds and high optical bandwidths in semiconductor photonic devices, thereby enabling high-performance system link designs for optical communications.
[0048] Figure 1A-1C This is a diagram illustrating an example of the semiconductor photonic device 100 described herein. The semiconductor photonic device 100 may include a photonic integrated circuit comprising one or more elements configured for processing optical signals (e.g., for optical communication).
[0049] Figure 1A This is a top view illustrating the photonic integrated circuit of the semiconductor photonic device 100. (See attached image.) Figure 1A As shown, the photonic integrated circuit of the semiconductor photonic device 100 may include a grating coupler 102 and a waveguide structure 104, the waveguide structure 104 being optically coupled to the grating coupler 102 at its first end 106. The waveguide structure 104 may be optically coupled to another element (e.g., an optical splitter 110) at its second end 108 opposite to the first end 106.
[0050] The grating coupler 102 can be configured to receive an optical signal (e.g., a laser signal or incident light from an input fiber or other type of external optical connection) and diffract the optical signal from an off-plane direction (e.g., the z-direction) to an in-plane direction (e.g., the x-direction) within a plane (e.g., the xy-plane) of the first end 106 of the waveguide structure 104 (e.g., for receiving optical signals).
[0051] The grating coupler 102 may include a plurality of gratings 112. In some embodiments, the gratings 112 may be periodic, and the periodicity of the gratings 112 may be selected to achieve diffraction of one or more wavelength optical signals. In some embodiments, the periodicity of the gratings 112 may be selected based on the wavelength used for optical communication, based on the wavelength used for wavelength division multiplexing (WDM), and / or for other purposes.
[0052] In some embodiments, the grating coupler 102 is formed of a semiconductor material, such as silicon (Si), germanium (Ge), and / or silicon-germanium (SiGe), and other examples. In some embodiments, the grating coupler 102 is formed of a dielectric material, such as silicon nitride (SixNy, such as Si3N4) and / or silicon oxide (SiOx, such as SiO2), and other examples. In some embodiments, the grating coupler 102 is a hybrid grating coupler structure, including a two-layer structure having dielectric and semiconductor portions.
[0053] A first end 106 of the waveguide structure 104 may be laterally adjacent to the first end 106 of the waveguide structure 104 in the x-direction. The waveguide structure 104 may be configured to provide an optical signal between the grating coupler 102 and the optical splitter 110. The optical signal may be received at the grating coupler 102 and provided to the waveguide structure 104 at the first end 106. The optical signal may propagate from the first end 106 through the waveguide structure 104 to the second end 108, where it is provided to the optical splitter 110.
[0054] Waveguide structure 104 may include strip waveguides, rib waveguides, ridge waveguides, drip waveguides, and / or other types of waveguide structures. In some embodiments, waveguide structure 104 is formed of a semiconductor material, such as silicon (Si), germanium (Ge), and / or silicon-germanium (SiGe), and other examples. In some embodiments, waveguide structure 104 is formed of a dielectric material, such as silicon nitride (SixNy, such as Si3N4) and / or silicon oxide (SiOx, such as SiO2), and other examples. In some embodiments, grating coupler 102 and waveguide structure 104 are both formed of the same semiconductor layer, such that a first end 106 of waveguide structure 104 is physically coupled to grating coupler 102. In some embodiments, grating coupler 102 is formed of a semiconductor layer, while waveguide structure 104 is formed of a dielectric layer, and the first end 106 of waveguide structure 104 is physically separated from grating coupler 102.
[0055] The optical splitter 110 may include an input port 114, a body 116, and output ports 118a and 118b. The input port 114 is optically coupled to a second end 108 of the waveguide structure 104 and can receive optical signals from the waveguide structure 104. The body 116 is configured to split the optical signal into multiple output optical signals, which propagate through their respective output ports 118a and 118b. Splitting the optical signals reduces the optical power of the optical signal and allows the output optical signals to be processed by other optical elements in the semiconductor photonic device 100 (e.g., optical modulators, optical resonators, polarizers, and / or photodetectors, and other examples).
[0056] In some embodiments, the optical splitter 110 is formed of a semiconductor material, such as silicon (Si), germanium (Ge), and / or silicon-germanium (SiGe), and other examples. In some embodiments, the optical splitter 110 is formed of a dielectric material, such as silicon nitride (SixNy, such as Si3N4) and / or silicon oxide (SiOx, such as SiO2), and other examples. In some embodiments, both the optical splitter 110 and the waveguide structure 104 are formed of the same semiconductor layer, such that the second end 108 of the waveguide structure 104 is physically coupled to the input port 114 of the optical splitter 110. In some embodiments, the optical splitter 110 is formed of a semiconductor layer, while the waveguide structure 104 is formed of a dielectric layer, and the second end 108 of the waveguide structure 104 is physically separated from the input port 114 of the optical splitter 110.
[0057] like Figure 1A As further shown, the waveguide structure 104 has a curved (or arc-shaped) top view shape between the first end 106 and the second end 108. Figure 1AIn the example shown, waveguide structure 104 has a semi-circular top view shape between the first end 106 and the second end 108. However, other curved top view shapes of waveguide structure 104 are also within the scope of this disclosure. Other example top view shapes of waveguide structure 104 are shown in... Figure 4-6 This is explained and described in detail.
[0058] The curved top-view shape of the waveguide structure 104 causes a first end 106 of the waveguide structure 104 to be oriented (e.g., facing) a first direction (e.g., the y-direction), while a second end 108 of the waveguide structure 104 is oriented (e.g., facing) a second direction (x-direction) different from the first direction. In some embodiments, the first end 106 of the waveguide structure 104 is oriented in the first direction, while the second end 108 of the waveguide structure 104 is oriented in a second direction approximately orthogonal to the first direction. In some embodiments, the first end 106 of the waveguide structure 104 is oriented in the first direction, while the second end 108 of the waveguide structure 104 is oriented in a second direction not orthogonal to the first direction.
[0059] The curved top-view shape of waveguide structure 104 enables it to transmit high-power optical signals while limiting the propagation of defects that may be caused by the high-power optical signals along waveguide structure 104. A large portion of the optical power of the high-power optical signal propagating through waveguide structure 104 may be concentrated near the center of its cross-section. This concentration of optical power may cause damage (e.g., in the form of crystal defects or crystal dislocations) to begin at the center of the cross-section of waveguide structure 104. If waveguide structure 104 were substantially straight between the first end 106 and the second end 108, these crystal defects would be allowed to propagate along the length of waveguide structure 104, potentially leading to significant propagation loss and / or failure of waveguide structure 104. The curved shape of waveguide structure 104 allows damage caused by high-power optical signals to be confined to specific locations on the curve of waveguide structure 104, thereby limiting the propagation of damage along specific directions within waveguide structure 104. In other words, the curved top-view shape of waveguide structure 104 inhibits the further propagation of crystal dislocations from their origin along the length of waveguide structure 104.
[0060] like Figure 1AAs further shown, the waveguide structure 104 may have one or more dimensions. An example dimension D1 of the waveguide structure 104 includes the arc angle of the waveguide structure 104, i.e., the angle between the first end 106 and the second end 108 of the waveguide structure 104. In some embodiments, the arc angle of the waveguide structure 104 is in the range of about 30 degrees to about 90 degrees, which allows for the localization of crystal dislocations in the waveguide structure 104 and enables the waveguide structure 104 to achieve low bending loss. However, other arc angle values and ranges for the waveguide structure 104 are also within the scope of this disclosure.
[0061] Another example dimension D2 includes the arc length, which is the curve length of the waveguide structure 104 between the first end 106 and the second end 108. In some embodiments, the arc length of the waveguide structure 104 is in the range of approximately 10 micrometers to approximately 20 micrometers, which enables the waveguide structure 104 to achieve low optical bending loss while allowing the semiconductor photonic device 100 to achieve a compact size. However, other arc length values and ranges for the waveguide structure 104 are also within the scope of this disclosure.
[0062] Figure 1B Show along Figure 1A Cross-sectional view of line AA. Therefore... Figure 1B The cross-sectional view in the image is along the x-direction in the semiconductor photonic device 100. For example... Figure 1B As shown, the semiconductor photonic device 100 may include multiple layers, including a substrate layer 120, a dielectric layer 122 above the substrate layer 120, a dielectric layer 124 above the dielectric layer 122, a dielectric layer 126 above the dielectric layer 124, and / or a dielectric layer 128 above the dielectric layer 126, and other examples.
[0063] The substrate layer 120 may include a semiconductor layer, such as a silicon (Si) layer, a germanium (Ge) layer, a silicon-germanium (SiGe) layer, a layer containing a group III-V semiconductor material, and / or other types of substrate materials.
[0064] Dielectric layers 124 and 128 may each include etch stop layers (ESLs), passivation layers, isolation layers, and / or other types of dielectric layers. Dielectric layers 122 and 126 may each include interlayer dielectric (ILD). Dielectric layers 122, 124, 126, and 128 may each include one or more dielectric materials, such as silicon oxide (SiOx), silicon nitride (SixNy), silicon oxynitride (SiON), undoped silicate glass (USG), phosphosilicate glass (PSG), borosilicate glass (BPSG), fluorinated silicate glass (FSG), carbon-doped silicon oxide, and / or other dielectric materials. In some embodiments, two or more of dielectric layers 122, 124, 126, and / or 128 include the same dielectric material and / or dielectric materials with the same composition. In some embodiments, two or more of dielectric layers 122, 124, 126 and / or 128 include different dielectric materials and / or dielectric materials with different compositions.
[0065] like Figure 1B As further shown, the grating coupler 102 and waveguide structure 104 may be contained within the dielectric layer 122, such that the grating coupler 102 and waveguide structure 104 are encapsulated within the dielectric layer 122. An optical splitter 110 (not visible in the cross-sectional view along line AA) may also be contained within the dielectric layer 122. The first ends 106 of the grating coupler 102 and waveguide structure 104 may be optically coupled and / or physically coupled, such that the grating coupler 102 and waveguide structure 104 are laterally adjacent to each other. Alternatively, the waveguide structure 104 may be located at a higher or lower vertical (z-direction) position within the dielectric layer 122 relative to the grating coupler 102.
[0066] like Figure 1B As further shown, the grating coupler 102 can be optically coupled to the input fiber 130. The input fiber 130 can be located above a notch 132 in the semiconductor photonic device 100 and can be configured to provide an optical signal 134 to the grating coupler 102. Alternatively, the input fiber 130 can be positioned laterally adjacent to one side of the semiconductor photonic device 100. The notch 132 can be filled with a dielectric material, such as silicon oxide (SiOx) and / or silicon nitride (SixNy) and other examples.
[0067] Figure 1C Show along Figure 1A Cross-sectional view of the BB line. Therefore... Figure 1C The cross-sectional view in the diagram is through waveguide structure 104. For example... Figure 1CAs shown, the waveguide structure 104 may have a ribbed cross-sectional profile, wherein the waveguide structure 104 includes a base portion 136 and a core portion 138 located on the base portion 136. The base portion 136 extends laterally outward from the core portion 138, and the core portion 138 extends above the base portion 136. The base portion 136 may also be referred to as the slab portion of the waveguide structure 104. Alternatively, the base portion 136 may be omitted, and the waveguide structure 104 may be a strip waveguide structure.
[0068] In some embodiments, the height or thickness of the base portion 136 (in) Figure 1C The thickness of the substrate portion 136 (denoted as dimension D3) can range from about 70 nanometers to about 130 nanometers. If the thickness of the substrate portion 136 (sometimes referred to as the plate height) is less than about 70 nanometers, optical losses in the waveguide structure 104 may increase due to increased sidewall light scattering. If the thickness of the substrate portion 136 is greater than about 130 nanometers, optical mode confinement in the waveguide structure 104 may decrease due to increased dispersion of the optical signal in the substrate portion 136. Selecting the thickness of the substrate portion 136 within the range of about 70 nanometers to about 130 nanometers allows for high optical mode confinement and low optical losses in the waveguide structure 104. However, the scope of this disclosure includes other values and ranges of the substrate portion 136 thickness beyond about 70 nanometers to about 130 nanometers.
[0069] In some embodiments, the base portion 136 of the waveguide structure 104 may have a non-uniform thickness along the length of the waveguide structure 104 (e.g., between the first end 106 and the second end 108), which can optimize optical mode confinement, optical signal loss, and / or crystal dislocation damage confinement. In some embodiments, the base portion 136 of the waveguide structure 104 may have different thicknesses on opposite sides of the waveguide structure 104, which can further optimize and adjust the optical mode confinement, optical signal loss, and / or crystal dislocation damage confinement of the waveguide structure 104. For example, the base portion 136 adjacent to the first side 140 of the core portion 138 may have a first thickness, and the base portion 136 adjacent to the second side 142 of the core portion 138 may have a second thickness, and the first thickness and the second thickness may be different thicknesses.
[0070] As described above, it provides Figure 1A-1C As an example. Other examples may be related to... Figure 1A-1C The descriptions are different.
[0071] Figure 2A-2J This illustration illustrates an example embodiment 200 of the semiconductor photonic device described herein. While example embodiment 200 is described in connection with the formation of semiconductor photonic device 100, it is not limited to... Figure 2A-2JThe operations and techniques described and illustrated herein can be used to form other semiconductor photonic devices described herein, such as those described herein. Figure 3 The semiconductor photonic device 300 described and illustrated in connection with this is related to... Figure 4 The associated semiconductor photonic device 400 and / or related to the described and illustrated semiconductor photonic device 400 Figure 5 The semiconductor photonic device 500 described and illustrated in connection with this, as well as other examples.
[0072] like Figure 2A As shown, a substrate 202 can be provided for the semiconductor photonic device 100. (As illustrated...) Figure 2B and 2C As shown, substrate 202 may include a silicon-on-insulator (SOI) substrate, comprising a substrate layer 120 (e.g., a silicon (Si) substrate and / or another type of semiconductor substrate), a portion of a dielectric layer 122 (e.g., a buried oxide or bottom oxide (BOX) layer and / or another type of insulating layer) on and / or on the substrate layer 120, and a semiconductor layer 204 (e.g., a silicon (Si) layer and / or another type of semiconductor layer) on and / or on the portion of the dielectric layer 122. Alternatively, substrate 122 may be provided as a semiconductor wafer, and the portion of dielectric layer 122 may be formed on and / or on substrate 120 using deposition tools, and the semiconductor layer 204 may be formed on and / or on the portion of dielectric layer 122. The portion of dielectric layer 122 may be deposited using chemical vapor deposition (CVD), physical vapor deposition (PVD), oxidation techniques (e.g., thermal oxidation), and / or another type of deposition technique using deposition tools. The semiconductor layer 204 can be formed using epitaxial technology and / or another type of deposition technology using deposition tools.
[0073] like Figure 2D-2F As shown, a grating coupler 102, a waveguide structure 104, and an optical splitter 110 can be formed on the dielectric layer 122. In some embodiments, the grating coupler 102, the waveguide structure 104, and / or the optical splitter 110 are formed of a semiconductor layer 204, such that the grating coupler 102, the waveguide structure 104, and / or the optical splitter 110 comprise a semiconductor material. In embodiments where the grating coupler 102 and the waveguide structure 104 are formed of a semiconductor layer 204, a first end 106 of the waveguide structure 104 can be optically coupled and physically coupled to the grating coupler 102. In embodiments where the waveguide structure 104 and the optical splitter 110 are formed of a semiconductor layer 204, a second end 108 of the waveguide structure 104 can be optically coupled and physically coupled to the optical splitter 110. The waveguide structure 104 can be patterned and formed to have a curved or arcuate top view shape, such as one or more example top views illustrated and described herein, for example, with Figure 1A-1C Shapes associated with 3, 4 and / or 5, and other examples.
[0074] In some embodiments, a hard mask layer may be formed on and / or on the semiconductor layer 204, and the pattern in the hard mask layer may be used to etch the semiconductor layer 204 to form the grating coupler 102, the waveguide structure 104, and the optical splitter 110. The hard mask layer may be deposited on the semiconductor layer 204 using deposition tools (e.g., using CVD, PVD, and / or another type of deposition technique) and a photoresist layer may be deposited on the hard mask layer (e.g., using spin coating and / or another type of deposition technique). The hard mask layer may include silicon nitride (SixNy, such as Si3N4) or another hard mask material. The photoresist layer may include a photosensitive material, which may be patterned using exposure tools (e.g., deep ultraviolet (DUV) lithography tools and / or extreme ultraviolet (EUV) lithography tools).
[0075] An exposure tool can be used to expose the photoresist layer to a radiation source to form a pattern in the photoresist layer. A developing tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch a hard mask layer to transfer the pattern from the photoresist layer to the hard mask layer. The semiconductor layer 204 can then be etched based on the pattern in the hard mask layer to remove material from the semiconductor layer 204 to form the grating coupler 102, the waveguide structure 104, and the optical splitter 110. In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or another type of etching operation. In some embodiments, a photoresist removal tool removes the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or other techniques).
[0076] like Figure 2G and 2H As shown, additional material for the dielectric layer 122 can be deposited around and / or over the grating coupler 102, waveguide structure 104, and optical splitter 110 using CVD, PVD, oxidation, and / or other types of deposition techniques. In some embodiments, a planarization operation (e.g., chemical mechanical polishing / planarization (CMP) operation) is performed using a planarization tool to planarize the dielectric layer 122.
[0077] like Figure 2G and 2HAs further shown, dielectric layers 124, 126, and 128 may be formed on and / or on dielectric layer 122. Dielectric layers 124, 126, and 128 may be deposited using deposition tools employing CVD, PVD, atomic layer deposition (ALD), oxidation, and / or another suitable deposition technique. Each of dielectric layers 124, 126, and 128 may be deposited in one or more deposition operations. In some embodiments, planarization tools may be used to planarize dielectric layers 124, 126, and 128 after deposition.
[0078] Additionally and / or alternatively, a dielectric layer (e.g., a silicon nitride (SixNy) layer) may be deposited over the optical element formed by the semiconductor layer 204, and the grating coupler 102, waveguide structure 104, and / or optical splitter 110 may be formed from the dielectric layer. Therefore, the grating coupler 102 may include a dielectric (or hybrid semiconductor and dielectric) grating coupler, the waveguide structure 104 may include a dielectric waveguide, and / or the optical splitter 110 may include a dielectric optical splitter.
[0079] like Figure 2I As shown, a notch 132 may be formed on the grating coupler 102. The notch 132 may be formed in the dielectric layers 126 and / or 128. In some embodiments, a pattern in the photoresist layer is used to etch the dielectric layers 126 and / or 128 to form the notch 132. In these embodiments, a deposition tool may be used to form the photoresist layer on the dielectric layer 128. An exposure tool may be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool may be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool may be used to etch the dielectric layers 126 and / or 128 based on the pattern to form the notch 132. In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or another type of etching operation. In some embodiments, a photoresist removal tool may be used to remove the remaining portions of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or another technique). In some implementations, a hard mask layer is used as an alternative technique to pattern-based notch 132.
[0080] like Figure 2J As shown, a dielectric material can be deposited into the notch 132 using deposition tools and / or electroplating tools employing CVD, PVD, ALD, and / or another suitable deposition technique. In some embodiments, a planarization tool can be used to planarize the dielectric material after deposition.
[0081] As mentioned above, Figure 2A-2J This is provided as an example only. Other examples may be related to... Figure 2A-2J The descriptions are different.
[0082] Figure 3 This is an example diagram of the semiconductor photonic device 300 described herein. The semiconductor photonic device 300 may include a photonic integrated circuit that includes one or more elements configured for processing optical signals (e.g., for optical communication).
[0083] like Figure 3 As shown, the semiconductor photonic device 300 includes an arrangement and combination of optical elements similar to those in the semiconductor photonic device 100. For example, the semiconductor photonic device 300 may include a grating coupler 102, a waveguide structure 104, and an optical splitter 110, wherein a first end 106 of the waveguide structure 104 is optically coupled and / or physically coupled to the grating coupler 102, and a second end 108 of the waveguide structure 104 is optically coupled and / or physically coupled to the optical splitter 110.
[0084] However, in the semiconductor photonic device 300, the waveguide structure 104 has a non-uniform curved or arc-shaped shape. For example, the waveguide structure 104 may have a semi-elliptical top-view shape between its first end 106 and its second end 108. Therefore, the eccentricity (e.g., a numerical representation of the deviation of the waveguide structure 104 from a circle) of the waveguide structure 104 is greater than that of the waveguide structure 104 in the semiconductor photonic device 100. For example, the top-view shape of the waveguide structure 104 in the semiconductor photonic device 100 may have an eccentricity of approximately 0, while the top-view shape of the waveguide structure 104 in the semiconductor photonic device 100 may have an eccentricity greater than 0 and less than 1.
[0085] Waveguide structure 104 has a semi-major axis 302 between a first end 106 and the geometric center 304 of an ellipse with a semi-elliptical top view shape of the waveguide structure, and a semi-minor axis 306 between a second end 108 and the geometric center 304. Alternatively, the semi-major axis 302 may be located at the second end 108, while the semi-minor axis 306 may be located at the first end 106. The length of the semi-major axis 302 (in...) Figure 3 The dimension indicated by D4 is greater than the length of the semi-minor axis 306 (in Figure 3 The dimension indicated is D5.
[0086] Due to the non-uniform curved or arc-shaped shape of the waveguide structure 104, the waveguide structure 104 has a non-uniform tangent angle (in Figure 3 (The dimension is indicated as D6). For example, the tangent angle may be approximately 90 degrees at the first end 106 and the second end 108, while it may be greater than 90 degrees or less than 90 degrees between the first end 106 and the second end 108.
[0087] As mentioned above, Figure 3 This is provided as an example only. Other examples may be related to... Figure 3 The descriptions are different.
[0088] Figure 4 This is an example diagram of the semiconductor photonic device 400 described herein. The semiconductor photonic device 400 may include a photonic integrated circuit, which includes one or more elements configured for processing optical signals (e.g., for optical communication).
[0089] like Figure 4 As shown, the semiconductor photonic device 400 includes an arrangement and combination of optical elements similar to those in the semiconductor photonic device 100. For example, the semiconductor photonic device 400 may include a grating coupler 102, a waveguide structure 104, and an optical splitter 110, wherein a first end 106 of the waveguide structure 104 is optically coupled and / or physically coupled to the grating coupler 102, and a second end 108 of the waveguide structure 104 is optically coupled and / or physically coupled to the optical splitter 110.
[0090] However, in the semiconductor photonic device 400, the waveguide structure 104 includes multiple curved segments, such as the first curved segment 402 and the second curved segment 404, and other examples. Figure 4 The number of curved segments shown is merely an example; other numbers and arrangements of curved segments in the waveguide structure 104 are also within the scope of this disclosure. The waveguide structure 104 includes multiple curved segments that allow crystal dislocations to be confined within the waveguide structure 104, while also enabling various curved arrangements to achieve specific propagation directions of the waveguide structure 104.
[0091] The first curved section 402 of the waveguide structure 104 can be optically coupled and / or physically coupled to the grating coupler 102. The first end of the first curved section 402 of the waveguide structure 104 (corresponding to the first end 106 of the waveguide structure 104) can be optically coupled and / or physically coupled to the grating coupler 102, and the second opposite end of the first curved section 402 of the waveguide structure 104 can be optically coupled and / or physically coupled to the second curved section 404, with the coupling point located at the center point 406 in the length direction of the waveguide structure 104.
[0092] The second curved segment 404 of waveguide structure 104 can be optically and / or physically coupled to optical splitter 110. The first end of the second curved segment 404 of waveguide structure 104 (corresponding to the second end 108 of waveguide structure 104) is optically and / or physically coupled to optical splitter 110. The second opposite end of the second curved segment 404 of waveguide structure 104 is optically and / or physically coupled to the center point 406 of the first curved segment 402. The center point 406 of waveguide structure 104 may correspond to the point of inflection between the first curved segment 402 and the second curved segment 404.
[0093] In some embodiments, the first curved segment 402 and the second curved segment 404 may be approximately point-symmetric with respect to the center point 406 of the waveguide structure 104. In other words, the first curved segment 402 is an affine transformation of the second curved segment 404, where the point of reflection corresponds to the center point 406, and approximately every point along the line of the first curved segment 402 is a reflection of the second curved segment 404 with respect to the center point 406. In some embodiments, the first curved segment 402 and the second curved segment 404 may be approximately line-symmetric with respect to the center point 406 of the waveguide structure 104. In other words, the first curved segment 402 is a mirror image of the second curved segment 404 along a line passing through the center point 406. In some embodiments, the first curved segment 402 and the second curved segment 404 are asymmetric.
[0094] like Figure 4 As further shown, the first curved segment 402 and the second curved segment 404 may each have one or more dimensions. For example, the first curved segment 402 may have a first arc angle (in... Figure 4 The dimension is indicated as D7), and the second curved section 404 may have a second arc angle (in Figure 4 (The reference numeral is D8). In some embodiments, the first arc angle and the second arc angle are approximately equal. In some embodiments, the first arc angle and the second arc angle are different arc angles.
[0095] As another example, the first curved segment 402 may have a first arc radius or arc length (in Figure 4 The designation is D9), and the second curved segment 404 may have a second arc radius or arc length (in...). Figure 4 (The dimension is indicated as D10). In some embodiments, the first arc radius and the second arc radius are approximately equal. In some embodiments, the first arc radius and the second arc radius are different arc radii.
[0096] As mentioned above, Figure 4Provided as an example. Other examples may be related to... Figure 4 The descriptions are different.
[0097] Figure 5 This is an example diagram of the semiconductor photonic device 500 described herein. The semiconductor photonic device 500 may include a photonic integrated circuit, which includes one or more elements configured for processing optical signals (e.g., for optical communication).
[0098] like Figure 5 As shown, the semiconductor photonic device 500 includes an arrangement and combination of optical elements similar to those in the semiconductor photonic device 100. For example, the semiconductor photonic device 500 may include a grating coupler 102, a waveguide structure 104, and an optical splitter 110, wherein a first end 106 of the waveguide structure 104 is optically coupled and / or physically coupled to the grating coupler 102, and a second end 108 of the waveguide structure 104 is optically coupled and / or physically coupled to the optical splitter 110.
[0099] However, in the semiconductor photonic device 500, the waveguide structure 104 has an approximately U-shaped or C-shaped top view. In other words, the waveguide structure 104 may have a bend of approximately 180 degrees, such that the first end 106 and the second end of the waveguide structure 104 face the same direction. This allows the photonic integrated circuit of the semiconductor photonic device 500 to achieve a compact footprint.
[0100] As mentioned above, Figure 5 Provided as an example. Other examples may be related to... Figure 5 The descriptions are different.
[0101] Figure 6 This is a flowchart of an example process 600 associated with the formation of the semiconductor photonic device described herein. In some embodiments, it is performed using one or more semiconductor process tools. Figure 6 One or more process blocks, such as deposition tools, exposure tools, development tools, etching tools, planarization tools, ion implantation tools, annealing tools, wafer / die transport tools, and / or other types of semiconductor process tools.
[0102] like Figure 6 As shown, process 600 may include forming a grating coupler (block 610) in a semiconductor layer of a semiconductor photonic device. For example, as described herein, one or more semiconductor process tools may be used to form a grating coupler (e.g., grating coupler 102) in a semiconductor layer (e.g., semiconductor layer 204) of a semiconductor photonic device (e.g., semiconductor photonic devices 100, 300, 400 and / or 500).
[0103] like Figure 6As further shown, process 600 may include forming a waveguide structure such that the waveguide structure is optically coupled to a grating coupler (block 620) at a first end of the waveguide structure. For example, as described herein, one or more semiconductor process tools may be used to form the waveguide structure (e.g., waveguide structure 104) such that the waveguide structure is optically coupled to the grating coupler at a first end of the waveguide structure (e.g., first end 106). In some embodiments, the waveguide structure has an arcuate top view shape between the first end and an opposite second end of the waveguide structure (e.g., second end 108).
[0104] Process 600 may include additional implementations, such as any single implementation or any combination of implementations of one or more other processes described below and / or elsewhere herein.
[0105] In a first embodiment, forming a waveguide structure includes forming a waveguide structure in a semiconductor layer.
[0106] In the second embodiment, forming a waveguide structure, alone or in combination with the first embodiment, includes forming the waveguide structure from a dielectric layer (e.g., dielectric layer 122, dielectric layer 126) above the semiconductor layer.
[0107] In the third embodiment, forming a waveguide structure, alone or in combination with one or more of the first and second embodiments, includes forming a waveguide structure such that a first end of the waveguide structure is oriented in a first direction (e.g., the y-direction) and a second end of the waveguide structure is oriented in a second direction (e.g., the x-direction) that is approximately orthogonal to the first direction.
[0108] In the fourth embodiment, the waveguide structure is formed alone or in combination with one or more of the first to third embodiments, including a base portion (e.g., base portion 136) forming the waveguide structure, and a core portion (e.g., core portion 138) forming the waveguide structure on the base portion.
[0109] In the fifth embodiment, the substrate portion forming the waveguide structure, alone or in combination with one or more of the first to fourth embodiments, includes forming a substrate portion such that the substrate portion has a non-uniform thickness (e.g., dimension D3) between the first end and the second end.
[0110] although Figure 6 Example blocks showing process 600, but in some embodiments, process 600 includes... Figure 6 The diagram depicts blocks that are additional, fewer, different, or arranged differently. Alternatively, two or more blocks in process 600 can be processed in parallel.
[0111] In this manner, semiconductor photonic devices include curved waveguide structures (e.g., waveguide structures with a curved top-view shape) that are optically coupled to a grating coupler for receiving high-power optical signals. The curvature of the waveguide structure resists the concentration of optical power in certain regions within the waveguide structure, enabling the waveguide structure to handle high-power optical signals without (or with minimal likelihood) being damaged by them. This allows the waveguide structure to support and facilitate high signal speeds and high optical bandwidths in semiconductor photonic devices, thereby enabling high-performance system link designs for optical communications.
[0112] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a grating coupler. The semiconductor photonic device includes a waveguide structure, wherein a first end of the waveguide structure is optically coupled to the grating coupler, and the waveguide structure has a curved top-view shape between the first end and a second end opposite to the first end. In one embodiment, the angle between the first end and the second end of the waveguide structure is in the range of substantially 30 degrees to substantially 90 degrees. In one embodiment, the waveguide structure has a semi-circular top-view shape between the first end and the second end of the waveguide structure. In one embodiment, the waveguide structure has a semi-elliptical top-view shape between the first end and the second end of the waveguide structure. In one embodiment, the waveguide structure includes a silicon (Si) waveguide structure. In one embodiment, the first end of the waveguide structure is physically coupled to the grating coupler. In one embodiment, the waveguide structure includes a dielectric waveguide structure.
[0113] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a grating coupler. The semiconductor photonic device includes a waveguide structure. The semiconductor photonic device includes an optical splitter, wherein a first curved segment of the waveguide structure is optically coupled to the grating coupler, and a second curved segment of the waveguide structure is optically coupled to the optical splitter. In one embodiment, a first end of the first curved segment of the waveguide structure is physically coupled to the grating coupler; and a second opposite end of the first curved segment of the waveguide structure is physically coupled to the second curved segment. In one embodiment, a first end of the second curved segment of the waveguide structure is physically coupled to the optical splitter; and a second opposite end of the second curved segment of the waveguide structure is physically coupled to the first curved segment. In one embodiment, the first and second curved segments are substantially point-symmetric with respect to the center point of the waveguide structure. In one embodiment, the center point of the waveguide structure corresponds to the inflection point between the first and second curved segments. In one embodiment, the first curved segment has a first arc angle; the second curved segment has a second arc angle; and the first arc angle and the second arc angle are different arc angles. In one embodiment, the first curved segment has a first arc radius; the second curved segment has a second arc radius; and the first arc radius and the second arc radius are different arc radii.
[0114] As described in more detail above, some embodiments described herein provide a method. The method includes forming a grating coupler in a semiconductor layer of a semiconductor photonic device. The method includes forming a waveguide structure such that the waveguide structure is optically coupled to the grating coupler at a first end of the waveguide structure, wherein the waveguide structure has an arcuate top-view shape between the first end and a second end opposite to the first end. In one embodiment, forming the waveguide structure includes forming the waveguide structure in the semiconductor layer. In one embodiment, forming the waveguide structure includes forming the waveguide structure from a dielectric layer above the semiconductor layer. In one embodiment, forming the waveguide structure includes forming the waveguide structure such that the first end of the waveguide structure is oriented in a first direction, and the second end of the waveguide structure is oriented in a second direction substantially orthogonal to the first direction. In one embodiment, forming the waveguide structure includes forming a substrate portion of the waveguide structure and forming a core portion of the waveguide structure on the substrate portion. In one embodiment, forming the substrate portion of the waveguide structure includes forming the substrate portion such that the substrate portion has a non-uniform thickness between the first end and the second end.
[0115] The terms “approximately” and “substantially” can indicate that the value of a given quantity varies within a range of 5% of the value (e.g., ±1%, ±2%, ±3%, ±4%, ±5%). These values are merely illustrative and not limiting. It should be understood that the terms “approximately” and “substantially” can refer to a percentage of the value of the given quantity as described in this disclosure.
[0116] The foregoing has outlined features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures for performing the same purposes and / or achieving the same advantages of the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of this disclosure, and that various alterations, substitutions, and changes can be made to this document without departing from the spirit and scope of this disclosure.
Claims
1. A semiconductor photonic device, characterized in that, include: grating coupler; as well as waveguide structure, The first end of the waveguide structure is optically coupled to the grating coupler, and The waveguide structure has a curved top view shape between the first end of the waveguide structure and the second end relative to the first end.
2. The semiconductor photonic device according to claim 1, characterized in that, The angle between the first end and the second end of the waveguide structure is in the range of 30 degrees to 90 degrees.
3. The semiconductor photonic device according to claim 1, characterized in that, The waveguide structure has a semi-circular or semi-elliptical top view shape between the first end and the second end of the waveguide structure.
4. The semiconductor photonic device according to claim 1, characterized in that, The waveguide structure includes a silicon waveguide structure or a dielectric waveguide structure.
5. The semiconductor photonic device according to claim 4, characterized in that, The first end of the waveguide structure is physically coupled to the grating coupler.
6. A semiconductor photonic device, characterized in that, include: grating coupler; Waveguide structure; as well as Optical splitter, The first curved segment of the waveguide structure is optically coupled to the grating coupler, and The second curved section of the waveguide structure is optically coupled to the optical splitter.
7. The semiconductor photonic device according to claim 6, characterized in that, The first end of the first curved segment of the waveguide structure is physically coupled to the grating coupler; and The second opposite end of the first curved segment of the waveguide structure is physically coupled to the second curved segment.
8. The semiconductor photonic device according to claim 6, characterized in that, The first end of the second curved segment of the waveguide structure is physically coupled to the optical splitter; and The second opposite end of the second curved segment of the waveguide structure is physically coupled to the first curved segment.
9. The semiconductor photonic device according to claim 6, characterized in that, The first curved section and the second curved section are point-symmetric with respect to the center point of the waveguide structure.
10. The semiconductor photonic device according to claim 9, characterized in that, The center point of the waveguide structure corresponds to the inflection point between the first curved segment and the second curved segment.